CN103633158B - A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method - Google Patents
A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method Download PDFInfo
- Publication number
- CN103633158B CN103633158B CN201310685078.7A CN201310685078A CN103633158B CN 103633158 B CN103633158 B CN 103633158B CN 201310685078 A CN201310685078 A CN 201310685078A CN 103633158 B CN103633158 B CN 103633158B
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- Prior art keywords
- reflection film
- sensitive surface
- bragg reflection
- bragg
- crystal silicon
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 110
- 239000010703 silicon Substances 0.000 title claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910004205 SiNX Inorganic materials 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 13
- 230000000694 effects Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 238000002161 passivation Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000000243 solution Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310685078.7A CN103633158B (en) | 2013-12-13 | 2013-12-13 | A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310685078.7A CN103633158B (en) | 2013-12-13 | 2013-12-13 | A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method |
Publications (2)
Publication Number | Publication Date |
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CN103633158A CN103633158A (en) | 2014-03-12 |
CN103633158B true CN103633158B (en) | 2016-04-20 |
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Family Applications (1)
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CN201310685078.7A Active CN103633158B (en) | 2013-12-13 | 2013-12-13 | A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method |
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CN (1) | CN103633158B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106653910B (en) * | 2016-12-23 | 2019-03-29 | 苏州腾晖光伏技术有限公司 | A kind of photovoltaic welding belt and preparation method thereof |
WO2020060487A1 (en) * | 2018-09-17 | 2020-03-26 | National University Of Singapore | Solar cell and method for fabricating a solar cell |
CN115172503A (en) * | 2022-06-29 | 2022-10-11 | 中国华能集团清洁能源技术研究院有限公司 | Included sub-cell assembly and photovoltaic cell |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521236A (en) * | 2009-04-03 | 2009-09-02 | 中国科学院电工研究所 | Light trapping structure for thin film solar cell |
CN102931267A (en) * | 2012-11-20 | 2013-02-13 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction solar cell and preparation method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1941422A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | N+/P high-impedance radiant GaAs solar battery with Bragg reflector |
US20070235072A1 (en) * | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
US20100006143A1 (en) * | 2007-04-26 | 2010-01-14 | Welser Roger E | Solar Cell Devices |
US8039736B2 (en) * | 2008-08-18 | 2011-10-18 | Andrew Clark | Photovoltaic up conversion and down conversion using rare earths |
US20120037228A1 (en) * | 2010-08-10 | 2012-02-16 | Du Pont Apollo Limited | Thin-Film Photovoltaic Cell Having Distributed Bragg Reflector |
-
2013
- 2013-12-13 CN CN201310685078.7A patent/CN103633158B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521236A (en) * | 2009-04-03 | 2009-09-02 | 中国科学院电工研究所 | Light trapping structure for thin film solar cell |
CN102931267A (en) * | 2012-11-20 | 2013-02-13 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction solar cell and preparation method thereof |
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Publication number | Publication date |
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CN103633158A (en) | 2014-03-12 |
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GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. |
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Effective date of registration: 20200618 Address after: 518112 Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen yongshenglong Technology Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210219 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen, Guangdong 518112 Patentee before: Shenzhen yongshenglong Technology Co.,Ltd. |