CN103633158B - A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method - Google Patents
A kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method Download PDFInfo
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- CN103633158B CN103633158B CN201310685078.7A CN201310685078A CN103633158B CN 103633158 B CN103633158 B CN 103633158B CN 201310685078 A CN201310685078 A CN 201310685078A CN 103633158 B CN103633158 B CN 103633158B
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- 239000010703 silicon Substances 0.000 title claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 239000013078 crystal Substances 0.000 title claims abstract description 91
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910004205 SiNX Inorganic materials 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 13
- 230000000694 effects Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 18
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- 238000006243 chemical reaction Methods 0.000 description 13
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- 239000000243 solution Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
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- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method, comprise silicon substrate, described silicon substrate has sensitive surface and non-sensitive surface, non-sensitive surface is provided with conflux conductive strips and N-type region of p type island region to conflux conductive strips, and become P-N-P-N type arrangement architecture, conflux conductive strips and cathode metal Electrode connection in p type island region, N-type region is confluxed conductive strips and negative metal Electrode connection, cover conflux conductive strips and N-type region of p type island region and be arranged on 2-8 layer Bragg reflecting layer on non-sensitive surface, described Bragg reflecting layer is arranged along the thickness direction of described crystal silicon battery, and every layer of described Bragg reflecting layer comprises the first bragg reflection film formed by the first material and the second bragg reflection film formed by the second material, described first bragg reflection film and described second bragg reflection film are along the staggered superposition of thickness direction of crystal silicon battery, the refractive index n of the second material
2be greater than the refractive index n of the first material
1.
Description
Technical field
The present invention relates to a kind of back contacts crystal silicon battery and non-sensitive surface processing method thereof and its preparation method, belong to crystal silicon solar batteries technical field.
Background technology
Solar energy power generating industry development is very fast, and since two thousand seven the photovoltaic output of China occupies first place, the whole world always, and product type, based on crystal silicon cell and assembly, occupies the market share of nearly 90%.Although Chinese photovoltaic manufacture the first, the photoelectric conversion efficiency of photovoltaic products is in medium level.
Crystal silicon solar batteries is the one of solar cell, and the transform light energy of the sun is mainly become electric energy by effect.Crystal silicon solar batteries, while the photon received from the sun produces charge carrier, carries out the compound of charge carrier.When Carrier recombination speed is larger, the electric current that crystal silicon solar energy battery produces will reduce, and electric current production efficiency reduces simultaneously, and namely photoelectric conversion efficiency reduces.Back contact solar battery by electrode design at the non-sensitive surface of battery thus eliminate electrode wires shading loss, maximally utilised solar energy, the photoelectric conversion efficiency of solar cell can have been improved to a certain extent.
For improving the photoelectric conversion efficiency of crystal silicon solar batteries further, existing solution is generally at crystal silicon solar batteries surface deposition passivating film, to realize reducing Carrier recombination speed, thus improve the object that crystal silicon solar batteries produces the efficiency of electric current.Chinese patent literature CN201655813U discloses a kind of crystalline silicon solar cell inactivating film, and the upper surface specifically disclosing silicon chip has the silica membrane that one deck grows the passivation formed in hot nitric acid liquid, the upper surface of silica membrane has one deck silicon nitride film.Disclosed in this patent documentation, silica membrane can improve the photoelectric conversion efficiency of solar cell; and crystal silicon solar batteries is not easily corroded; can be moistureproof; and the useful life of solar cell can be improved; although above-mentioned passivation film technology reduces the speed of the Carrier recombination that crystal silicon battery utilizes solar energy to produce, photoelectric conversion efficiency or not ideal enough; and due to the very thin thickness of passivating film, effectively crystal silicon battery can not be protected.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is to overcome the defect that in prior art, crystal silicon battery photoelectric conversion efficiency is lower, thus the back contacts crystal silicon battery providing a kind of photoelectric conversion efficiency higher.
Another technical problem that the present invention will solve is to provide the processing method of the non-sensitive surface of a kind of back contacts crystal silicon battery.
Another technical problem that the present invention will solve is to provide the preparation method of the high back contacts crystal silicon battery of a kind of photoelectric conversion efficiency.
For this reason, the invention provides a kind of back contacts crystal silicon battery, comprise silicon substrate, described silicon substrate has sensitive surface and non-sensitive surface, described non-sensitive surface is provided with conflux conductive strips and N-type region of p type island region to conflux conductive strips, and become P-N-P-N type arrangement architecture, conflux conductive strips and cathode metal Electrode connection in described p type island region, described N-type region is confluxed conductive strips and negative metal Electrode connection, also comprise and cover conflux conductive strips and described N-type region of described p type island region and to conflux conductive strips, be arranged on the 2-8 layer Bragg reflecting layer on described non-sensitive surface, every layer of described Bragg reflecting layer comprises the first bragg reflection film that one deck formed by the first material and the second bragg reflection film that one deck is formed by the second material, described Bragg reflecting layer is arranged along the thickness direction of described crystal silicon battery, and described first bragg reflection film and described second bragg reflection film are along the staggered superposition of thickness direction of crystal silicon battery, the refractive index n of described second material
2be greater than the refractive index n of described first material
1.
Described first material is SiO
2, described second material is SiNx.
Alternatively, described first material is SiO
2, described second material is TiO
2.
Described first bragg reflection film has the first thickness d 1, and described second bragg reflection film has the second thickness d 2, d1=d2=1/8 λ, and λ is the centre wavelength of target reflects light.
Described first bragg reflection film has the first thickness d 1, and described second bragg reflection film has the second thickness d 2, d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2), λ
1and λ
2be respectively the centre wavelength of two target reflects light.
On described non-sensitive surface, the thickness summation of all described Bragg reflecting layers is 290-1200nm.
On described non-sensitive surface, the thickness summation of all described Bragg reflecting layers is 290-800nm.
Described sensitive surface is also provided with sensitive surface anti-reflection layer.
Present invention also offers the processing method of the non-sensitive surface of a kind of back contacts crystal silicon battery, comprise the steps:
1) on the non-sensitive surface of crystal silicon battery, deposit the first bragg reflection film that one deck is formed by the first material;
2) on described first bragg reflection film, the second bragg reflection film that one deck is formed by the second material is deposited, the refractive index n of described second material
2be greater than the refractive index n of described first material
1, described first Prague film and described second bragg reflection film form one deck Bragg reflecting layer;
3) repeating said steps 1 on the described Bragg reflecting layer formed) and step 2) 1-7 time, make described first bragg reflection film and described second bragg reflection film along the thickness direction alternating deposit of described non-sensitive surface, thus deposit the described Bragg reflecting layer of 2-8 layer on described non-sensitive surface.
Adopt SiO
2as the first material, adopt SiNx as the second material.
Another execution mode, adopts SiO
2as the first material, adopt TiO
2as the second material.
When the centre wavelength of target reflects light is λ, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=d2=1/8 λ.
Target reflects light is two, and centre wavelength is respectively λ
1and λ
2, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=(2 λ
1-λ
2)/(2n
2), d2=(λ
2-λ
1)/(2n
2).
Present invention also offers a kind of preparation method of back contacts crystal silicon battery, comprise the steps:
1) on described silicon substrate, form conflux conductive strips and N-type region of p type island region to conflux conductive strips, and conflux in described p type island region, conductive strips and the described N-type region conductive strips that conflux are alternately arranged, and become P-N-P-N type arrangement architecture;
2) cover conflux conductive strips and described N-type region of described p type island region to conflux conductive strips, described non-sensitive surface deposits the first bragg reflection film that one deck is formed by the first material; Described first bragg reflection film deposits the second bragg reflection film that one deck is formed by the second material, the refractive index n of described second material
2be greater than the refractive index n of described first material
1, described first Prague film and described second bragg reflection film form one deck Bragg reflecting layer;
3) repeating said steps 2 on the described Bragg reflecting layer formed) 1-7 time, make described first bragg reflection film and described second bragg reflection film along the thickness direction alternating deposit of described non-sensitive surface, thus deposit the described Bragg reflecting layer of 2-8 layer on described non-sensitive surface;
4) conductive strips that cathode metal electrode and described p type island region confluxed are electrically connected, and the conductive strips that negative metal electrode and described N-type region confluxed are electrically connected.
Described step 2) in, adopt SiO
2as the first material, adopt SiNx as the second material.
Described step 2) in, adopt SiO
2as the first material, adopt TiO
2as the second material.
The centre wavelength of target reflects light is λ, and described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=d2=1/8 λ.
Target reflects light is two, and centre wavelength is respectively λ
1and λ
2, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2).
A kind of back contacts crystal silicon battery of the present invention and non-sensitive surface processing method thereof and its preparation method have the following advantages:
1. a kind of back contacts crystal silicon battery of the present invention, non-sensitive surface covers p type island region conductive strips and the N-type region conductive strips that conflux that conflux and forms 2-8 layer Bragg reflecting layer, every layer of Bragg reflecting layer includes the first bragg reflection film formed by the first material that refractive index is less and the second bragg reflection film formed by the second material that refractive index is larger, first bragg reflection film and the second bragg reflection film are along the staggered superposition of thickness direction of crystal silicon battery, the light reflection passing non-sensitive surface from crystal silicon battery sensitive surface can be gone back, crystal silicon battery is allowed to absorb again, make originally to be utilized again through the luminous energy of crystal silicon battery, thus the utilization ratio that improve luminous energy, and then add photoelectric conversion efficiency.And owing to deposited the Bragg reflecting layer of 2-8 layer at the non-sensitive surface of crystal silicon battery, thickness is large, and hardness is high, enhances the physical strength of crystal silicon battery, can the available protecting crystal silicon battery back side.
2. a kind of back contacts crystal silicon battery of the present invention, arranging the first material is SiO
2described second material is SiNx, thus make the Bragg reflecting layer be deposited on non-sensitive surface not only can play the effect of reflection ray, can also the non-sensitive surface of passivation crystal silicon battery, reduce Carrier recombination speed, thus make the crystal silicon battery that have employed technical solution of the present invention utilize the efficiency of solar energy higher, photoelectric conversion efficiency is higher.
3. a kind of back contacts crystal silicon battery of the present invention, arranging the first material is SiO
2, the second material is TiO
2, due to TiO
2refractive index be greater than the refractive index of SiNx, thus can more effective reflection ray, make the light penetrating crystal silicon battery be reflected onto crystal silicon battery more, be again absorbed and used.
4. a kind of back contacts crystal silicon battery of the present invention, arranges the first bragg reflection film identical with the second Bragg reflection film thickness, and is equal to 1/8 of target reflects light centre wavelength, because can be absorbed by crystal silicon battery and the light converting electric energy to is generally within the scope of one, and light of a certain wavelength is absorbed by crystal silicon battery and to convert the utilance of electric energy to higher within the scope of this, or when there are other advantages, the light that just can arrange this wavelength is target light, reasonable setting is deposited on the first bragg reflection film of non-sensitive surface and the thickness of the second bragg reflection film, form Bragg reflecting layer, thus the light reflection in this certain limit more can be gone back again to utilize, more efficient than all light of simple indiscriminate reflection, also more meaningful.
5. a kind of back contacts crystal silicon battery of the present invention, the first thickness arranging the first bragg reflection film is d1, and the second thickness of the second bragg reflection film is d2, and d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2), λ
1and λ
2be the centre wavelength of two target reflects light.When can be absorbed by crystal silicon battery and convert in the light range of electric energy, there is the different light of two wavelength to be absorbed by crystal silicon battery and to convert the utilance of electric energy to higher, or when there are other advantages, the light that just can arrange these two wavelength is target light, reasonable setting is deposited on the first bragg reflection film of non-sensitive surface and the thickness of the second bragg reflection film, form Bragg reflecting layer, thus the light reflection in this certain limit more can be gone back again to utilize, more selectively can make full use of luminous energy, improve optical energy utilization efficiency, and then raising photoelectric conversion efficiency.
6. a kind of back contacts crystal silicon battery of the present invention, the thickness arranging Bragg reflecting layer is 290-1200nm, is preferably 290-800nm, can saves material, reducing costs when realizing the object of the present application completely, avoids waste.
7. a kind of back contacts crystal silicon battery of the present invention, arranges sensitive surface anti-reflection layer at the sensitive surface of silicon substrate, light can be avoided to be reflexed in the air by sensitive surface, can increase the light entering into crystal silicon inside, improves light utilization ratio.
8. the non-sensitive surface processing method of a kind of back contacts crystal silicon battery provided by the invention, by replacing stacking first bragg reflection film and the second bragg reflection film on non-sensitive surface, and form Bragg reflecting layer, can realize increasing optical energy utilization efficiency, simply effectively.
9. the preparation method of a kind of back contacts crystal silicon battery provided by the invention, to be confluxed conductive strips by conflux conductive strips and N-type region of the p type island region forming the arrangement of P-N-P-N type on a silicon substrate, and covering arranges Bragg reflecting layer thereon, and be connected eventually through cathode metal electrode and negative metal electrode conductive strips and the N-type region conductive strips that conflux that conflux with aforementioned p-type district respectively, realize electrical communication, thus obtain described back contacts crystal silicon battery.
Accompanying drawing explanation
Fig. 1 is traditional material is SiO
2the individual layer passivating film of/SiNx is deposited on non-sensitive surface back reflection effect simulation figure.
Fig. 2 is the structural representation after back contact battery PN junction of the present invention completes.
Fig. 3 is the structural representation that in Fig. 1, back contact battery back side Bragg reflecting layer completes.
Fig. 4 is the structural representation that in Fig. 1, back contact battery back side P-type electrode completes.
Fig. 5 is the effect simulation figure of backside reflection after bragg reflection film lamination in embodiment 1.
Fig. 6 is the effect simulation figure of backside reflection after bragg reflection film lamination in embodiment 2.
Fig. 7 is the backside reflection effect simulation figure in embodiment 3 after bragg reflection film lamination.
Fig. 8 is the backside reflection effect simulation figure in embodiment 4 after bragg reflection film lamination.
In figure, Reference numeral is:
100-silicon substrate, 102-sensitive surface anti-reflection layer, the non-sensitive surface p type island region of 104-battery, the non-sensitive surface N-type region of 106-battery, conflux conductive strips in 108-P type district, 110-cathode metal electrode, and conflux conductive strips in 112-N type district, 200-Bragg reflecting layer, 300-average reflectance, 302-maximum reflectivity.
Embodiment
For improving the photoelectric conversion efficiency of solar cell, traditionally general in the non-sensitive surface deposit passivation layer of crystal silicon solar batteries to reduce Carrier recombination speed, it also has the effect of certain reflection ray, and as shown in Figure 1, the simulation tradition material done for applicant is SiO
2the individual layer passivating film of/SiNx is deposited on non-sensitive surface back reflection design sketch, and as seen from the figure, the reflecting effect of above-mentioned passivating film is very poor, little for the reflection utilization effect improving solar energy.
Below in conjunction with accompanying drawing, the efficient crystal silicon battery of a kind of back contacts of the present invention is described in further detail.
Embodiment 1
The present embodiment provides a kind of back contacts crystal silicon battery, as in Figure 2-4, comprise silicon substrate 100, described silicon substrate 100 has sensitive surface and non-sensitive surface, described non-sensitive surface is provided with conflux conductive strips 108 and N-type region of p type island region to conflux conductive strips 112, and become P-N-P-N type arrangement architecture, the described p type island region conductive strips 108 that conflux are connected with cathode metal electrode 110, described N-type region is confluxed conductive strips 112 and negative metal Electrode connection, cover described p type island region conductive strips 108 and the described N-type region conductive strips 112 that conflux that conflux and be arranged on 5 layers of Bragg reflecting layer 200 on described non-sensitive surface, described Bragg reflecting layer 200 is arranged along the thickness direction of described crystal silicon battery, and every layer of described Bragg reflecting layer 200 comprises the first bragg reflection film formed by the first material and the second bragg reflection film formed by the second material, described first bragg reflection film and described second bragg reflection film are along the staggered superposition of thickness direction of crystal silicon battery, the refractive index n of described second material
2be greater than the refractive index n of described first material
1.In the present embodiment, the first material is SiO
2, the thickness of the first bragg reflection film formed by it is d1, and the second material is SiNx, and the thickness of the second bragg reflection film formed by it is d2, wherein SiO
2refractive index n
1the refractive index n of=1.46, SiNx
2=1.90.
In the present embodiment, get centre wavelength and be respectively λ
1=500nm and λ
2the light of=800nm is two target reflects light, and by formula d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2) calculate d1=68.2nm respectively, d2=78.9nm, on non-sensitive surface, 5 layers of above-mentioned Bragg reflecting layer 200 are deposited according to these data, the data that test obtains as shown in Figure 5, be 65% to the light maximum reflectivity 302 of wavelength within the scope of 400-800nm, average reflectance 300 is 30%, and reflecting effect greatly strengthens compared with the reflecting effect of existing passivation layer.
In the present embodiment, the x in SiNx approximates 4/3.
Embodiment 2
The present embodiment provides a kind of back contacts crystal silicon battery, it is the distortion on embodiment 1 basis, difference is, in the present embodiment, the light getting central wavelength lambda=600nm is target reflects light, and calculate d1=d2=75nm by formula d1=d2=1/8 λ, on non-sensitive surface, 5 layers of above-mentioned Bragg reflecting layer 200 are deposited according to these data, the data that test obtains as shown in Figure 6, be 65% to the light maximum reflectivity 302 of wavelength within the scope of 400-800nm, average reflectance 300 is 30%, be more or less the same with the data in Fig. 5, but reflecting effect is compared with the reflecting effect of existing passivation layer, greatly strengthen.
Be out of shape as to the one of the present embodiment, above-mentioned Bragg reflecting layer 200 can arrange 2-8 layer, all can realize goal of the invention.
Embodiment 3
The present embodiment provides a kind of back contacts crystal silicon battery, and it is the distortion on embodiment 1 basis, and difference is, in the present embodiment, the first material is SiO
2, the thickness of the first bragg reflection film formed by it is d1, and the second material is TiO
2, the thickness of the second bragg reflection film formed by it is d2, wherein SiO
2refractive index n
1=1.46, TiO
2refractive index n
2=2.35.
Get centre wavelength and be respectively λ
1=500nm and λ
2the light of=800nm is two target reflects light, and by formula d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2) calculate d1=68.2nm respectively, d2=78.9nm, on non-sensitive surface, 5 layers of above-mentioned Bragg reflecting layer 200 are deposited according to these data, the data that test obtains as shown in Figure 7, be 93% to the light maximum reflectivity 302 of wavelength within the scope of 400-800nm, average reflectance 300 is about 50%, and reflecting effect greatly strengthens compared with the reflecting effect in embodiment 1.
Embodiment 4
The present embodiment provides a kind of back contacts crystal silicon battery, it is the distortion on embodiment 3 basis, difference is, in the present embodiment, the light getting central wavelength lambda=600nm is target reflects light, and calculate d1=d2=75nm by formula d1=d2=1/8 λ, on non-sensitive surface, 5 layers of above-mentioned Bragg reflecting layer 200 are deposited according to these data, the data that test obtains as shown in Figure 8, be 93% to the light maximum reflectivity 302 of wavelength within the scope of 400-800nm, average reflectance 300 is about 50%, be more or less the same with the data in Fig. 7, but reflecting effect is compared with the reflecting effect in embodiment 1, greatly strengthen.
Embodiment 5
The present embodiment provides the processing method of the non-sensitive surface of a kind of back contacts crystal silicon battery, comprises the steps:
1) on the non-sensitive surface of crystal silicon battery, deposit the first bragg reflection film that one deck is formed by the first material;
2) on described first bragg reflection film, the second bragg reflection film that one deck is formed by the second material is deposited, the refractive index n of described second material
2be greater than the refractive index n of described first material
1, thus realize depositing one deck Bragg reflecting layer 200 on described non-sensitive surface;
3) repeating said steps 1 on the described Bragg reflecting layer 200 formed) and step 2) 4 times, make described first bragg reflection film and described second bragg reflection film along the thickness direction alternating deposit of described non-sensitive surface, thus deposit 5 layers of described Bragg reflecting layer 200 on described non-sensitive surface.
In the present embodiment, adopt SiO
2as the first material, adopt SiNx as the second material, and the x in SiNx approximate 4/3; SiO can certainly be adopted
2as the first material, adopt TiO
2as the second material, all goal of the invention can be realized.
Be out of shape as to the one of the present embodiment, repeating said steps 1) and step 2) 1-7 time, thus on described non-sensitive surface, deposit the described Bragg reflecting layer 200 of 2-8 layer, all can realize goal of the invention.
In the present embodiment, the centre wavelength of target reflects light is λ, and described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=d2=1/8 λ.
In the present embodiment, the light getting central wavelength lambda=600nm is target reflects light, and calculates d1=d2=75nm by formula d1=d2=1/8 λ, deposits 5 layers of above-mentioned Bragg reflecting layer 200 according to these data on non-sensitive surface.
Be out of shape as to the one of the present embodiment, when target reflects light is two, and centre wavelength is respectively λ
1and λ
2time, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2).
Embodiment 6
The present embodiment provides a kind of preparation method of back contacts crystal silicon battery, comprises the steps:
1) as shown in Figure 2, first adopt the NaOH aqueous solution on silicon substrate 100, produce the light trapping structure with Pyramid, then select mass fraction be 30% NaOH alkaline polishing solution, remove the suede structure of non-sensitive surface, then boron is injected at non-sensitive surface impurity, form the non-sensitive surface p type island region 104 of battery, phosphorus doping technique is carried out with same ion injection method, form the non-sensitive surface N-type region 106 of battery, after thermal anneal process process, and use deionized water and HF acid solution to remove the oxide skin(coating) on silicon substrate 100 surface, form basic battery P-N junction structure,
Adopt Sputter (sputtering) and plated metal metallization processes, above the non-sensitive surface p type island region 104 of battery, make p type island region to conflux conductive strips 108, above the non-sensitive surface N-type region 106 of battery, make N-type region to conflux conductive strips 112, thickness is respectively 500um, and conflux in p type island region, conductive strips 108 and the N-type region conductive strips 112 that conflux are arranged alternately on cell thickness direction, and form P-N-P-N type and to conflux the arrangement architecture of conductive strips.
2) pecvd process is adopted, temperature 400 DEG C, radio-frequency power 3000W, NH
3/ SiH
4ratio be 5:1, N
2o/SiH
4ratio be 16:1, under the condition of pressure 3mbar, the non-sensitive surface of crystal silicon battery as shown in Figure 2 deposits the SiO that a layer thickness is 68.2nm
2be the SiNx of 78.9nm with a layer thickness, form one deck Bragg reflecting layer 200, the SiO of alternately deposit those thickness on the Bragg reflecting layer 200 formed
2with SiNx4 time, thus on non-sensitive surface, form 5 layers of Bragg reflecting layer 200(as shown in Figure 3).
3) femto-second laser perforate on Bragg reflecting layer 200 is utilized, the laser center wavelength adopted is 808nm, frequency is 10KHz, single pulsewidth is 100fs, the diameter that Bragg reflecting layer 200 etches perforate is 100um, make p type island region passivation layer perforate and the perforate of N-type region passivation layer, and the perforate of same kind is located along the same line, and veriform perforate floor plan does not exist staggered.
4) as shown in Figure 4, at all p type island region perforates and N-type region tapping coated with conductive slurry, and fill up, then cathode metal electrode 110 is covered in above the tapping conductive silver glue of p type island region, and carries out roll extrusion, realize confluxing with p type island region the electrical connection of conductive strips 108, negative metal electrode fabrication process is identical with positive pole, carries out curing process after completing, and curing temperature is 100 DEG C, curing time control is 30min, thus makes to have certain adhesive strength between metal electrode and conductive silver paste.Thus prepare back contacts crystal silicon battery as described in Example 1.
The x in SiNx is selected to approximate 4/3 in the present embodiment.
Improve as to the one of the present embodiment, the thickness d 1 of every layer of Bragg reflecting layer and d2, and the stacking number of times of above-mentioned Bragg reflecting layer on non-sensitive surface all can use MacLeod or other optical software to be optimized, to obtain more excellent reflecting effect as the case may be.
Be out of shape as to the one of the present embodiment, above-mentioned steps 2) in pecvd process can also adopt the equipment such as LPCVD or ALD of the prior art to realize, be not limited in the present embodiment a kind of mode adopted.
Embodiment 7
The present embodiment provides a kind of preparation method of back contacts crystal silicon battery, and it is the distortion on embodiment 6 basis, and difference is:
In step 1), adopt the KOH aqueous solution on silicon substrate 100, produce the light trapping structure with Pyramid, then select mass fraction be 15% KOH alkaline polishing solution, remove the suede structure of non-sensitive surface;
Adopt Sputter (sputtering) and plated metal metallization processes, conflux conductive strips 108 in the p type island region of producing above the non-sensitive surface p type island region 104 of battery, to conflux conductive strips 112 with the N-type region produced above the non-sensitive surface N-type region 106 of battery, its thickness is 600um.
Step 2) in, adopt pecvd process, temperature 450 DEG C, radio-frequency power 3000W, NH
3/ SiH
4ratio be 10:1, N
2o/SiH
4ratio be 5:1, under the condition of pressure 1mbar, the non-sensitive surface of crystal silicon battery deposits the SiO that a layer thickness is 75nm
2be the SiNx of 75nm with a layer thickness, form one deck Bragg reflecting layer 200, the SiO of alternately deposit those thickness on the Bragg reflecting layer 200 formed
2with SiNx4 time, thus form 5 layers of Bragg reflecting layer 200 on non-sensitive surface.
In step 3), utilize femto-second laser perforate on Bragg reflecting layer 200, the laser center wavelength adopted is 808nm, frequency is 10KHz, single pulsewidth is 100fs, the diameter that Bragg reflecting layer 200 etches perforate is 50nm, makes p type island region passivation layer perforate and the perforate of N-type region passivation layer.
When carrying out curing process after completing in step 4), curing temperature is 50 DEG C, and curing time control is 180min, thus makes to have certain adhesive strength between metal electrode and conductive silver paste, thus prepares back contacts crystal silicon battery as described in Example 2.
Embodiment 8
The present embodiment provides a kind of preparation method of back contacts crystal silicon battery, and it is the distortion on embodiment 6 basis, and difference is:
In step 1), adopt the KOH aqueous solution on silicon substrate 100, produce the light trapping structure with Pyramid, then select mass fraction be 60% NaOH alkaline polishing solution, remove the suede structure of non-sensitive surface;
Adopt Sputter (sputtering) and plated metal metallization processes, above the non-sensitive surface p type island region 104 of battery, produce p type island region to conflux conductive strips 108, to conflux conductive strips 112 with the N-type region produced above the non-sensitive surface N-type region 106 of battery, its thickness is 50nm.
Step 2) in, adopt pecvd process, temperature 430 DEG C, radio-frequency power 3000W, NH
3/ SiH
4ratio be 8:1, N
2o/SiH
4ratio be 10:1, under the condition of pressure 2mbar, the non-sensitive surface of crystal silicon battery deposits the SiO that a layer thickness is 68.2nm
2be the TiO of 78.9nm with a layer thickness
2, form one deck Bragg reflecting layer 200, the SiO of alternating deposit 4 above-mentioned thickness on the Bragg reflecting layer 200 formed
2and TiO
2, thus 5 layers of Bragg reflecting layer 200 are formed on non-sensitive surface.
In step 3), utilize femto-second laser perforate on Bragg reflecting layer 200, the laser center wavelength adopted is 808nm, frequency is 10KHz, single pulsewidth is 100fs, the diameter that Bragg reflecting layer 200 etches perforate is 100um, makes p type island region passivation layer perforate and the perforate of N-type region passivation layer.
Carry out after completing in step 4) in curing process, curing temperature is 150 DEG C, and curing time control is 130min, thus makes to have certain adhesive strength between metal electrode and conductive silver paste.Thus prepare back contacts crystal silicon battery as described in Example 3.
Embodiment 9
The present embodiment provides a kind of preparation method of back contacts crystal silicon battery, and it is the distortion on embodiment 8 basis, and difference is:
In step 1), adopt the NaOH aqueous solution on silicon substrate 100, produce the light trapping structure with Pyramid, then select mass fraction be 40% KOH alkaline polishing solution, remove the suede structure of non-sensitive surface;
Adopt Sputter (sputtering) and plated metal metallization processes, conflux conductive strips 108 in the p type island region of producing above the non-sensitive surface p type island region 104 of battery, to conflux conductive strips 112 with the N-type region produced above the non-sensitive surface N-type region 106 of battery, its thickness is 300um.
Step 2) in, adopt pecvd process, temperature 410 DEG C, radio-frequency power 3000W, NH
3/ SiH
4ratio be 7:1, N
2o/SiH
4ratio be 13:1, under the condition of pressure 3mbar, the non-sensitive surface of crystal silicon battery deposits the SiO that a layer thickness is 75nm
2be the TiO of 75nm with a layer thickness
2, form one deck Bragg reflecting layer 200, the SiO of alternating deposit 4 above-mentioned thickness on the Bragg reflecting layer 200 formed
2and TiO
2, thus 5 layers of Bragg reflecting layer 200 are formed on non-sensitive surface.
In step 3), utilize femto-second laser perforate on Bragg reflecting layer 200, the laser center wavelength adopted is 808nm, frequency is 10KHz, single pulsewidth is 100fs, the diameter that Bragg reflecting layer 200 etches perforate is 200um, makes p type island region passivation layer perforate and the perforate of N-type region passivation layer.
Carry out after completing in step 4) in curing process, curing temperature is 80 DEG C, and curing time control is 100min, thus makes to have certain adhesive strength between metal electrode and conductive silver paste.Thus prepare back contacts crystal silicon battery as described in Example 3.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (12)
1. a back contacts crystal silicon battery, comprise silicon substrate (100), described silicon substrate (100) has sensitive surface and non-sensitive surface, described non-sensitive surface is provided with conflux conductive strips (108) and N-type region of p type island region to conflux conductive strips (112), and become P-N-P-N type arrangement architecture, the described p type island region conductive strips (108) that conflux are connected with cathode metal electrode (110), described N-type region is confluxed conductive strips (112) and negative metal Electrode connection, it is characterized in that: also comprise and cover described p type island region conductive strips (108) and the described N-type region conductive strips (112) that conflux that conflux and be arranged on 2-8 layer Bragg reflecting layer (200) on described non-sensitive surface, every layer of described Bragg reflecting layer (200) comprises the first bragg reflection film that one deck formed by the first material and the second bragg reflection film that one deck is formed by the second material, described Bragg reflecting layer (200) is arranged along the thickness direction of described crystal silicon battery, and described first bragg reflection film and described second bragg reflection film are along the staggered superposition of thickness direction of crystal silicon battery, the refractive index n of described second material
2be greater than the refractive index n of described first material
1,
Described first material is SiO
2, described second material is SiNx or TiO
2.
2. back contacts crystal silicon battery according to claim 1, is characterized in that: described first bragg reflection film has the first thickness d 1, and described second bragg reflection film has the second thickness d 2, d1=d2=1/8 λ, and λ is the centre wavelength of target reflects light.
3. back contacts crystal silicon battery according to claim 1, is characterized in that: described first bragg reflection film has the first thickness d 1, and described second bragg reflection film has the second thickness d 2, d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2), λ
1and λ
2be respectively the centre wavelength of two target reflects light.
4. the back contacts crystal silicon battery according to any one of claim 1-3, is characterized in that: on described non-sensitive surface, the thickness summation of all described Bragg reflecting layers (200) is 290-1200nm.
5. back contacts crystal silicon battery according to claim 4, is characterized in that: on described non-sensitive surface, the thickness summation of all described Bragg reflecting layers (200) is 290-800nm.
6. back contacts crystal silicon battery according to claim 4, is characterized in that: described sensitive surface is also provided with sensitive surface anti-reflection layer (102).
7. a processing method for the non-sensitive surface of back contacts crystal silicon battery, is characterized in that, comprise the steps:
1) on the non-sensitive surface of crystal silicon battery, deposit the first bragg reflection film that one deck is formed by the first material;
2) on described first bragg reflection film, the second bragg reflection film that one deck is formed by the second material is deposited, the refractive index n of described second material
2be greater than the refractive index n of described first material
1, described first Prague film and described second bragg reflection film form one deck Bragg reflecting layer (200), adopt SiO
2as the first material, adopt SiNx or TiO
2as the second material;
3) in the upper repeating said steps 1 of the described Bragg reflecting layer (200) formed) and step 2) 1-7 time, make described first bragg reflection film and described second bragg reflection film along the thickness direction alternating deposit of described non-sensitive surface, thus deposit the described Bragg reflecting layer of 2-8 layer (200) on described non-sensitive surface.
8. the processing method of the non-sensitive surface of back contacts crystal silicon battery according to claim 7, it is characterized in that: when the centre wavelength of target reflects light is λ, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=d2=1/8 λ.
9. the processing method of the non-sensitive surface of back contacts crystal silicon battery according to claim 7, is characterized in that: target reflects light is two, and centre wavelength is respectively λ
1and λ
2, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2).
10. a preparation method for back contacts crystal silicon battery, is characterized in that, comprises the steps:
1) to conflux conductive strips (112) in upper conflux conductive strips (108) and the N-type region of p type island region that formed of silicon substrate (100), and conflux in described p type island region, conductive strips (108) and the described N-type region conductive strips (112) that conflux are alternately arranged, one-tenth P-N-P-N type arrangement architecture;
2) cover conflux conductive strips (108) and described N-type region of described p type island region to conflux conductive strips (112), non-sensitive surface deposits the first bragg reflection film that one deck is formed by the first material; Described first bragg reflection film deposits the second bragg reflection film that one deck is formed by the second material, the refractive index n of described second material
2be greater than the refractive index n of described first material
1, described first Prague film and described second bragg reflection film form one deck Bragg reflecting layer (200); Adopt SiO
2as the first material, adopt SiNx or TiO
2as the second material;
3) in the upper repeating said steps 2 of the described Bragg reflecting layer (200) formed) 1-7 time, make described first bragg reflection film and described second bragg reflection film along the thickness direction alternating deposit of described non-sensitive surface, thus deposit the described Bragg reflecting layer of 2-8 layer (200) on described non-sensitive surface;
4) conductive strips (108) that confluxed in cathode metal electrode (110) and described p type island region are electrically connected, and the conductive strips (112) that negative metal electrode and described N-type region confluxed are electrically connected.
The preparation method of 11. back contacts crystal silicon battery according to claim 10, it is characterized in that: the centre wavelength of target reflects light is λ, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=d2=1/8 λ.
The preparation method of 12. back contacts crystal silicon battery according to claim 10, is characterized in that: target reflects light is two, and centre wavelength is respectively λ
1and λ
2, described non-sensitive surface deposits described first bragg reflection film of d1 thickness and described second bragg reflection film of d2 thickness, and d1=(2 λ
1-λ
2)/(2n
1), d2=(λ
2-λ
1)/(2n
2).
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