WO2017197811A1 - Cellule solaire en silicium monocristallin à double face et son procédé de fabrication - Google Patents

Cellule solaire en silicium monocristallin à double face et son procédé de fabrication Download PDF

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Publication number
WO2017197811A1
WO2017197811A1 PCT/CN2016/098553 CN2016098553W WO2017197811A1 WO 2017197811 A1 WO2017197811 A1 WO 2017197811A1 CN 2016098553 W CN2016098553 W CN 2016098553W WO 2017197811 A1 WO2017197811 A1 WO 2017197811A1
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solar cell
single crystal
crystal silicon
double
silicon substrate
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PCT/CN2016/098553
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Chinese (zh)
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盛赟
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常州天合光能有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell and a preparation method thereof, in particular to a single crystal silicon double-sided solar cell and a preparation method thereof, and belongs to the technical field of solar cells.
  • the double-sided solar cell utilizes the front and back two light receiving surfaces to obtain a higher photocurrent density and greatly increase the power generation.
  • a photovoltaic system based on double-sided solar cells can achieve 10 to 30% power gain.
  • the double-sided solar cell structure includes: a front and back suede structure, a pn junction emitter, a passivation anti-reverse dielectric layer, and a front and back electrode.
  • the suede on the back side can effectively improve the absorption of the ground and ambient reflected light on the back side of the double-sided battery, and is an important structure of the double-sided solar cell.
  • the back side of the double-sided solar cell adopts a suede-like structure similar to that of the front surface, that is, the pyramids obtained by the texturing are closely distributed and overlap each other.
  • the present invention is directed to the above-mentioned technical problems existing in the prior art, and provides a single crystal silicon double-sided solar cell, which optimizes minority carrier surface load and optical absorption characteristics of a solar cell, and improves quantum conversion efficiency.
  • a method for preparing a single crystal silicon double-sided solar cell is provided to improve conversion efficiency and production efficiency of a solar cell.
  • a single crystal silicon double-sided solar cell sequentially forms a front pyramidal pile surface (101), a front side doped emitter junction (102), and a front passivation anti-reflection medium layer on the front side of the single crystal silicon substrate (100).
  • the front electrode (104) which sequentially forms a back pyramid-shaped suede (105) on the back surface of the single crystal silicon substrate, a back surface field (106), a back passivation anti-reverse dielectric layer (107), and a back surface electrode (108), wherein the back pyramidal pile surface (105) is a split pyramidal pile surface, and the pyramid structure (105a)
  • the single crystal silicon substrate is only partially covered, and the pyramid structure (105a) is dispersedly distributed on the silicon substrate, and the region covered by the pyramid structure (105a) accounts for 20% to 90% of the back silicon substrate.
  • the base length of the single pyramid structure (105a) is 1-7 ⁇ m.
  • the front passivation anti-reflection dielectric layer (103) and the back passivation anti-reflection dielectric layer (107) are respectively made of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon carbide, amorphous silicon, Microcrystalline silicon, indium tin oxide or titanium oxide is a single layer film or a multilayer film composed of a material.
  • the front electrode (104) and the back electrode (108) are one or more metals of silver, aluminum, copper, nickel, titanium, tin, lead, cadmium, gold, zinc or alloys thereof.
  • a method for preparing a single crystal silicon double-sided solar cell for preparing the single crystal silicon double-sided solar cell includes the following steps:
  • S2 front side doping to form an emitter junction
  • step S4 the chemical agent used for preparing the backside separation pyramid topography by wet chemical method is sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, nitric acid, phosphoric acid, hydrofluoric acid, ethanol, isopropanol or One or more aqueous solutions of ethylene glycol; the preparation temperature is 60 to 80 ° C, and the time is 10 to 900 seconds.
  • steps S2 and S3 may also be included: S2-1: depositing a barrier layer on the front side.
  • the method further comprises the following steps: S5-1: removing the front silicon oxide, the phosphosilicate glass and the back borosilicate glass using hydrofluoric acid.
  • the single crystal silicon double-sided solar cell of the invention reduces the surface area of the surface of the back surface of the solar cell by providing a separate pyramid-shaped suede on the back side of the battery, and significantly reduces the photo-generated minority carriers on the back surface.
  • Composite the long-wavelength light incident on the front surface increases in reflection on the back surface, the transmission is reduced, and is absorbed by the solar cell again; at the same time, the back surface is covered with the anti-reflective dielectric layer, and the optical reflection on the back surface is not significantly increased, thereby ensuring the optical absorption characteristics of the back surface. Therefore, by separating the pyramid topography structure on the back surface, the minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell can be optimized, and the quantum conversion efficiency is improved.
  • the preparation method of the single crystal silicon double-sided solar cell of the invention only adds a wet chemical method to prepare the backside separation pyramid topography structure, and the process is relatively simple, and is suitable for low-cost, large-volume, stable industrial manufacturing.
  • FIG. 1 is a schematic structural view of a single crystal silicon double-sided solar cell of the present invention.
  • Figure 2 is a photomicrograph of a split pyramidal suede of the present invention.
  • 100 is a single crystal silicon substrate, 101 is a front pyramidal suede, 102 is a front doped emitter junction, 103 is a front passivation antireflection dielectric layer, 104 is a front electrode, and 105 is a back pyramidal suede, 105a
  • 106 is the back surface field
  • 107 is the back passivation anti-reverse dielectric layer
  • 108 is the back electrode
  • 109 is the area not covered by the pyramid structure; the corresponding product structure in the figure is only a schematic diagram, not drawn to scale.
  • This embodiment is a case where the present invention is applied to P-type single crystal silicon.
  • a front pyramidal pile surface 101, a front side phosphorus doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the P-type single crystal silicon substrate 100, in the P-type.
  • the back surface of the single crystal silicon substrate is sequentially formed with a back side separation type pyramidal pile surface 105, a boron doped back surface field 106 formed by back surface boron doping, a back passivation anti-reflection medium layer 107, and a back surface electrode 108, wherein, as shown in FIG.
  • the pyramid structure 105a only partially covers the single crystal silicon substrate, and the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, leaving some not covered by the pyramid structure. Area 109.
  • the area covered by the pyramid structure 105a accounts for 85% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 5 ⁇ m;
  • the front passivation anti-reflection dielectric layer 103 is made of silicon nitride.
  • a back passivation anti-reflective dielectric layer 107 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film has a thickness of 20 to 30 nm and a silicon nitride film has a thickness of 50 to 70nm.
  • the front electrode 104 and the back electrode 108 are both silver gate electrodes.
  • Embodiment 1 differs from Embodiment 1 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 50% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 7 ⁇ m.
  • the front passivation anti-reflection dielectric layer 103 is a single-layer film made of silicon oxynitride having a film thickness of 70 to 80 nm; and the back passivation anti-reflective dielectric layer 107 is a two-layer film made of titanium oxide and silicon oxide, wherein The titanium oxide film has a thickness of 20 to 30 nm and a silicon oxide film thickness of 50 to 70 nm.
  • the front electrode 104 and the back electrode 108 are both copper electrodes.
  • This embodiment is a case where the present invention is applied to N-type single crystal silicon.
  • a front pyramidal pile surface 101, a front side boron doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the N-type single crystal silicon substrate 100.
  • the back surface of the single crystal silicon substrate is sequentially formed with a back surface separation type pyramidal surface 105, a phosphorus-doped back surface field 106 formed by back surface phosphorus doping, a back passivation anti-reflection dielectric layer 107, and a back surface electrode 108, wherein the back surface is separated
  • the pyramid structure 105a only partially covers the single crystal silicon substrate, the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, and the region covered by the pyramid structure 105a occupies the entire back silicon substrate. 30%, the base length of the single pyramid structure 105a is 2 ⁇ m.
  • the front passivation anti-reflective dielectric layer 103 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film is 20 to 30 nm thick and the silicon nitride film is 50 to 70 nm thick;
  • the passivation anti-reflection dielectric layer 107 is a single-layer film made of silicon nitride having a film thickness of 70 to 80 nm;
  • the front electrode 104 and the back surface electrode 108 are both silver gate electrodes.
  • Embodiment 3 differs from Embodiment 3 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 65% of the entire back silicon substrate, and the bottom side length of the single pyramid structure 105a is 4 ⁇ m.
  • the front passivation anti-reflective dielectric layer 103 is a double made of indium tin oxide and amorphous silicon.
  • the back passivation anti-reflective dielectric layer 107 is a two-layer film made of indium tin oxide and amorphous silicon, wherein indium oxide The tin film is 60 to 80 nm thick and the amorphous silicon film is 5 to 20 nm thick; the front electrode 104 and the back electrode 108 are both silver electrodes.
  • a method for preparing a single crystal silicon double-sided solar cell which is used for preparing the P single crystal silicon double-sided solar cell described in Embodiment 1, comprising the following steps:
  • S1 Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the p-type single crystal silicon substrate 100 is textured to form a front pyramid Forming the suede 101 while removing the silicon wafer to cut the damaged layer;
  • S2 front side doping forms an emitter junction: phosphorus doping is performed to form a front doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, diffusion.
  • the square resistance is 40 to 200 ⁇ / ⁇ ;
  • a front side deposition barrier layer a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
  • boron doping is performed to form a back surface field 106, boron doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer, diffusion The resistance is 60 to 200 ⁇ / ⁇ ;
  • S6 preparing a front side and a back passivation anti-reflection medium layer: a passivation anti-reflection dielectric layer 107 of a front side silicon nitride 103 and a back side aluminum oxide/silicon nitride layer prepared by PECVD; a front side silicon nitride thickness of 70 to 80 nm, back surface oxidation The thickness of the aluminum is 20 to 30 nm, and the thickness of the silicon nitride is 50 to 70 nm;
  • Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
  • Example 2 The preparation method of Example 2 was referred to the production method of Example 1.
  • a method for preparing a single crystal silicon double-sided solar cell which is used for preparing the N single crystal silicon double-sided solar cell described in Embodiment 3, comprising the following steps:
  • S1 Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the n-type single crystal silicon substrate 100 is textured to form a front velvet Surface morphology 101, while removing the silicon wafer to cut the damage layer;
  • S2 front side doping to form an emitter junction: boron doping is performed to form a front side boron doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer.
  • the diffusion resistance is 60 to 200 ⁇ / ⁇ ;
  • a front side deposition barrier layer a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
  • S5 back doping to form a back surface field: phosphorus doping is performed to form a back surface field 106, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, and diffusion.
  • the resistance is 40 to 200 ⁇ / ⁇ ;
  • S5-1 using hydrofluoric acid to remove the front side silicon oxide, borosilicate glass and the back side of the phosphosilicate glass;
  • S6 preparing a front side and a back passivation anti-reflective medium layer: a front side alumina/silicon nitride, a passivation anti-reflective dielectric layer 107 of 103 and a back silicon nitride by PECVD; a front side alumina thickness of 20 to 30 nm, nitriding The thickness of the silicon is 50 to 70 nm; the thickness of the back silicon nitride is 70 to 80 nm;
  • Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
  • Example 4 The preparation method of Example 4 was referred to the production method of Example 3.

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Abstract

L'invention relève du domaine de la technologie des cellules solaires et concerne une cellule solaire en silicium monocristallin à double face ayant une surface texturée en pyramide de face avant (101), une jonction émetteur dopée de face avant (102), une couche de milieu de passivation antireflet de face avant (103) et une électrode de face avant (104) étant chacune formée de manière séquentielle sur une face avant d'un substrat en silicium monocristallin (100) ; une surface texturée en pyramide de face arrière (105), un champ de surface arrière (106), une couche de milieu de passivation antireflet de face arrière (107) et une électrode de face arrière (108), étant chacun formé de manière séquentielle sur une face arrière du substrat en silicium monocristallin (100). La cellule solaire en silicium monocristallin à double face est caractérisée en ce que : la surface texturée en pyramide de face arrière (105) est de type discret ; des structures pyramidales (105a) ne recouvrent que partiellement le substrat en silicium monocristallin (100) et sont réparties de manière discrète sur le substrat en silicium monocristallin ; les structures pyramidales (105a) recouvrent 20 % à 90 % d'une zone de la face arrière du substrat en silicium. La cellule solaire en silicium monocristallin à double face et son procédé de fabrication permettent d'optimiser la recombinaison de surface de porteurs de charge minoritaires et les caractéristiques d'absorption optique, augmentant ainsi l'efficacité de conversion quantique.
PCT/CN2016/098553 2016-05-17 2016-09-09 Cellule solaire en silicium monocristallin à double face et son procédé de fabrication WO2017197811A1 (fr)

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CN201610331351.XA CN105826405A (zh) 2016-05-17 2016-05-17 一种单晶硅双面太阳电池及其制备方法

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