CN108336156A - 一种具有hac-d特征的晶体硅双面太阳电池结构 - Google Patents
一种具有hac-d特征的晶体硅双面太阳电池结构 Download PDFInfo
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Abstract
一种具有HAC‑D特征的晶体硅双面太阳电池结构,以n型晶体硅片作为基底,其发射极面分为发射极‑导电区域和钝化‑进光区域:前者由本征非晶硅钝化层、重掺杂p型非晶硅层、金属栅线I构成,后者由重掺杂n型晶体硅场钝化层I、钝化减反射层I构成;其背电场面由基底向外依次为本征非晶硅钝化层II、重掺杂n型非晶硅层、透明导电氧化物TCO层、金属栅线II,金属栅线II部分覆盖透明导电氧化物TCO层。本发明保持了双面进光特性,同时获得高开路电压和高短路电流的特性,提高了晶体硅太阳电池的发电能力。相比于HIT和HAC‑D结构完全避免贵重的透明导电氧化物的使用,同时减少了载流子在TCO上传输所造成的串联电阻损耗。
Description
技术领域
本发明属于太阳电池和半导体器件领域。涉及太阳电池的制备技术。
背景技术
对于地面用太阳电池,双面进光的结构实际发电量高于同等标称功率的单面进光太阳电池的认识已经被行业普遍接受。目前主流的双面进光太阳电池均是以n型晶体硅片为基底的。一种是基于pn同质结结构的n-PERT结构,特点是短路电流大,开路电压低;另一类是以基于pn异质结结构的,以HIT结构为代表,特点是短路电流小,开路电压高。如何提高前者的开路电压和提高后者的短路电流一直是业内的难点,也是努力的方向。如能结合二者的特点,发明一种新的结构,同时获得高短路电流、高开路电压的优点,有望进一步提高双面晶体硅太阳电池的性能。南昌大学以前的一项发明是在此方向上的一个进步(中国发明专利,No. 201510776929.8),其结构称为HAC-D结构,意思是该结构结合了HAC(heterojunction of amorphous silicon and crystalline silicon)异质结和扩散制备的同质结( Diffused homojunction of crystalline silicon))。相比于HIT结构可获得更高的短路电流,并可保证HIT结构高开路电压的特点。但该结构仍有进步空间,本发明就是对HAC-D结构的进一步改进。相比于HAC-D结构可进一步提高太阳电池的电流和开路电压,降低串联电阻,并减少贵重的透明导电氧化物(TCO)的用量。
发明内容
本发明的主要目的是提出一种具有HAC-D特征的晶体硅双面太阳电池结构,结合pn同质结高短路电流和pn异质结高开路电压的优点,合理配置器件构成,以进一步提高晶体硅双面太阳电池的发电效率,减少贵重原材料的消耗。
本发明是通过以下技术方案实现的。
本发明所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,以n型晶体硅片(6)作为基底,其发射极面分为发射极-导电区域和钝化-进光区域:发射极-导电区域由基底向外依次由本征非晶硅钝化层(3)、重掺杂p型非晶硅层(2)、金属栅线I(1)构成,钝化-进光区域由基底向外依次由重掺杂n型晶体硅场钝化层I(5)、钝化减反射层I(4)构成。这两个区域交叉分布且不重叠。
为提高金属栅线I(1)与重掺杂p型非晶硅层(2)之间的接触导电性,优选在二者之间插入一过渡TCO层。
本发明所述的钝化减反射层I(4)优选氮化硅。
本发明所述的发射极与重掺杂n型晶体硅场钝化层I(5)之间优选进行绝缘处理。
进一步地,为提高器件的性能,所述的重掺杂n型晶体硅场钝化层I(5)的厚度优选1-300nm。
所述的一种双面HAC-D结构的晶体硅太阳电池,其背电场面结构为:由基底向外依次为本征非晶硅钝化层II(7)、重掺杂n型非晶硅层(8)、透明导电氧化物TCO层(9)、金属栅线II(10),其中,金属栅线II(10)部分覆盖透明导电氧化物TCO层(9)。
进一步地,为提高器件的性能,本发明所述的n型晶体硅片(6)可以双面制绒,以进一步提高太阳电池短路电流。
进一步地,n型晶体硅片(6)的双面的制绒情况可以不同,一面采用较小尺寸金字塔结构的绒面,另外一面采用较大尺寸的金字塔绒面或者无金字塔的抛光结构。
进一步地,有金属栅线(金属栅线I、金属栅线II)区域可以抛光或做更大尺寸金字塔的绒面,以减少复合损耗,提高太阳电池的开路电压。
进一步地,器件表面金属栅线(金属栅线I、金属栅线II)总覆盖面积比例优选为1~3%,以提高太阳电池的短路电流并保证足够好的导电性。
发明的技术效果是:在保持晶体硅太阳电池双面进光的特性前提下,同时获得高开路电压和高短路电流的特性,最大程度的提高晶体硅太阳电池的发电能力。其机理是通过金属栅线覆盖面积下的非晶硅发射极及配套结构获得高的开路电压,在没有金属栅线的地方采用重掺杂n型晶体硅场钝化层结合表面减反射钝化层的结构相比于常规非晶硅/晶体硅异质结太阳电池可减少遮光损失,将更多入射的太阳光有效转变为光生载流子,且可减少光生载流子在硅片表面区域的横向传输复合损耗。在发射极面,产生的光生空穴在重掺杂n型层形成的内建电场的推动下进入体硅内部,然后集中流向发射极区域,形成了类似聚光太阳电池的大电流效应,可进一步提高太阳电池的内建电势,从而进一步提高太阳电池的电压;而产生的电子因为发射极面的重掺杂n型区域没有电极,只能流向硅片另外一面的金属电极被收集起来。另外,本发明相比于HIT结构和HAC-D结构可以完全避免贵重的透明导电氧化物的使用,同时可也减少了载流子在TCO上传输所造成的串联电阻损耗。
附图说明
附图1本发明的结构示意图。其中:1为金属栅线I;2为重掺杂p型非晶硅层;3为本征非晶硅钝化层I;4为钝化减反射层I;5为重掺杂n型晶体硅场钝化层I;6为n型晶体硅片;7为本征非晶硅钝化层II;8为重掺杂n型非晶硅层;9为透明导电氧化物TCO层;10为金属栅线II。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
如附图1所示的一种具有HAC-D特征的晶体硅双面太阳电池结构的结构。n型晶体硅片6在发射极面采用平均尺寸为1微米的金字塔型绒面结构,在另外一面采用化学抛光的平面结构(不制绒)。重掺杂n型晶体硅场钝化层I 5厚度为1nm。金属栅线I 1采用从硅片表面向外依此为钛/钯/银结构的复合金属电极,遮盖面积占据为发射极面硅片面积的1%;金属栅线II 10采用纯银栅线结构的电极,遮盖面积为所在硅片表面积的3%。该结构背电场面进光特性弱于发射极面,所以其应用时需将发射极面作为主迎光面。如作为单面进光太阳电池使用,则可在背光面镀一层金属作为反光层,增加作为单面进光太阳太阳电池的短路电流。
该结构的两个表面的进光特性均十分优异,均可作为主进光面。如作为单面进光太阳电池使用,则可在背光面镀一层金属作为反光层,增加作为单面进光太阳太阳电池的短路电流。
实施例2。
如附图1所示的一种具有HAC-D特征的晶体硅双面太阳电池结构的结构。n型晶体硅片6在发射极面采用平均尺寸为3微米的金字塔型绒面结构,在另外一面采用化学抛光的平面结构(不制绒)。重掺杂n型晶体硅场钝化层I 5厚度为5nm。在金属栅线I1与重掺杂p型非晶硅层2之间有一层10nm的ITO。金属栅线I 1为纯银栅线电极,遮盖面积占据为发射极面硅片面积的1.5%;金属栅线II 10采用纯银栅线结构的电极,遮盖面积为所在硅片表面积的2.0%。该结构背电场面进光特性弱于发射极面,所以其应用时需将发射极面作为主迎光面。如作为单面进光太阳电池使用,则可在背光面镀一层金属作为反光层,增加作为单面进光太阳太阳电池的短路电流。
该结构的两个表面的进光特性均十分优异,均可作为主进光面。如作为单面进光太阳电池使用,则可在背光面镀一层金属作为反光层,增加作为单面进光太阳太阳电池的短路电流。
Claims (9)
1.一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是以n型晶体硅片(6)作为基底,其发射极面分为发射极-导电区域和钝化-进光区域:发射极-导电区域由基底向外依次由本征非晶硅钝化层(3)、重掺杂p型非晶硅层(2)、金属栅线I(1)构成,钝化-进光区域由基底向外依次由重掺杂n型晶体硅场钝化层I(5)、钝化减反射层I(4)构成,这两个区域交叉分布且不重叠;
其背电场面结构为:由基底向外依次为本征非晶硅钝化层II(7)、重掺杂n型非晶硅层(8)、透明导电氧化物TCO层(9)、金属栅线II(10),其中,金属栅线II(10)部分覆盖透明导电氧化物TCO层(9)。
2.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是在金属栅线I(1)与重掺杂p型非晶硅层(2)之间插入一过渡TCO层。
3.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是所述的钝化减反射层I(4)为氮化硅。
4.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是所述的发射极与重掺杂n型晶体硅场钝化层I(5)之间进行绝缘处理。
5.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是所述的重掺杂n型晶体硅场钝化层I(5)的厚度为1-300nm。
6.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是所述的n型晶体硅片(6)为双面制绒。
7.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是n型晶体硅片(6)的双面的制绒为:一面采用较小尺寸金字塔结构的绒面,另外一面采用较大尺寸的金字塔绒面或者无金字塔的抛光结构。
8.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是在有金属栅线区域抛光或做大尺寸金字塔的绒面。
9.根据权利要求1所述的一种具有HAC-D特征的晶体硅双面太阳电池结构,其特征是器件表面金属栅线总覆盖面积比例优选为1~3%。
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