CN105826411A - 单晶硅双面太阳电池及其制备方法 - Google Patents
单晶硅双面太阳电池及其制备方法 Download PDFInfo
- Publication number
- CN105826411A CN105826411A CN201610328025.3A CN201610328025A CN105826411A CN 105826411 A CN105826411 A CN 105826411A CN 201610328025 A CN201610328025 A CN 201610328025A CN 105826411 A CN105826411 A CN 105826411A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- back side
- preparation
- silicon
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- 210000002268 wool Anatomy 0.000 claims description 24
- 235000008216 herbs Nutrition 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 238000007704 wet chemistry method Methods 0.000 claims description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000005297 pyrex Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 241000628997 Flos Species 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013043 chemical agent Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000013081 microcrystal Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- -1 wherein Chemical compound 0.000 description 3
- LKBREHQHCVRNFR-UHFFFAOYSA-K [B+3].[Br-].[Br-].[Br-] Chemical compound [B+3].[Br-].[Br-].[Br-] LKBREHQHCVRNFR-UHFFFAOYSA-K 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610328025.3A CN105826411B (zh) | 2016-05-17 | 2016-05-17 | 单晶硅双面太阳电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610328025.3A CN105826411B (zh) | 2016-05-17 | 2016-05-17 | 单晶硅双面太阳电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105826411A true CN105826411A (zh) | 2016-08-03 |
CN105826411B CN105826411B (zh) | 2017-12-08 |
Family
ID=56530767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610328025.3A Active CN105826411B (zh) | 2016-05-17 | 2016-05-17 | 单晶硅双面太阳电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105826411B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106876519A (zh) * | 2017-01-20 | 2017-06-20 | 广东爱康太阳能科技有限公司 | 一种三氧化二铝钝化n型双面晶硅太阳能电池制备方法 |
CN107785457A (zh) * | 2017-10-16 | 2018-03-09 | 浙江昱辉阳光能源江苏有限公司 | 一种p型双面晶硅太阳电池的制作工艺 |
CN108336156A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种具有hac-d特征的晶体硅双面太阳电池结构 |
CN108336157A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构 |
CN108336155A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种hac-d晶体硅双面太阳电池结构 |
CN108336176A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种Si基局域发射极双面太阳电池结构 |
CN108461553A (zh) * | 2018-03-12 | 2018-08-28 | 南昌大学 | 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构 |
CN109004043A (zh) * | 2018-07-16 | 2018-12-14 | 南通天盛新能源股份有限公司 | 一种太阳能电池背面电极的制备方法与应用 |
CN111640824A (zh) * | 2020-06-11 | 2020-09-08 | 常州时创能源股份有限公司 | 一种双面晶体硅太阳电池及其制备方法 |
CN113328012A (zh) * | 2021-06-24 | 2021-08-31 | 浙江爱旭太阳能科技有限公司 | 降低复合速率的perc电池的制作方法和perc电池 |
CN113964241A (zh) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | N型单晶硅双面太阳电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201051502Y (zh) * | 2006-12-31 | 2008-04-23 | 刘津平 | 铜铟镓和硒或硫化物太阳能电池 |
WO2012025511A1 (de) * | 2010-08-27 | 2012-03-01 | Universität Konstanz | Verfahren zum herstellen einer solarzelle mit einer texturierten frontseite sowie entprechende solarzelle |
CN105047742A (zh) * | 2015-09-07 | 2015-11-11 | 中国东方电气集团有限公司 | 一种双面n型晶体硅电池及其制备方法 |
CN205900558U (zh) * | 2016-05-17 | 2017-01-18 | 常州天合光能有限公司 | 单晶硅双面太阳电池 |
-
2016
- 2016-05-17 CN CN201610328025.3A patent/CN105826411B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201051502Y (zh) * | 2006-12-31 | 2008-04-23 | 刘津平 | 铜铟镓和硒或硫化物太阳能电池 |
WO2012025511A1 (de) * | 2010-08-27 | 2012-03-01 | Universität Konstanz | Verfahren zum herstellen einer solarzelle mit einer texturierten frontseite sowie entprechende solarzelle |
CN105047742A (zh) * | 2015-09-07 | 2015-11-11 | 中国东方电气集团有限公司 | 一种双面n型晶体硅电池及其制备方法 |
CN205900558U (zh) * | 2016-05-17 | 2017-01-18 | 常州天合光能有限公司 | 单晶硅双面太阳电池 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106876519A (zh) * | 2017-01-20 | 2017-06-20 | 广东爱康太阳能科技有限公司 | 一种三氧化二铝钝化n型双面晶硅太阳能电池制备方法 |
CN107785457A (zh) * | 2017-10-16 | 2018-03-09 | 浙江昱辉阳光能源江苏有限公司 | 一种p型双面晶硅太阳电池的制作工艺 |
CN108336156A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种具有hac-d特征的晶体硅双面太阳电池结构 |
CN108336157A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构 |
CN108336155A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种hac-d晶体硅双面太阳电池结构 |
CN108336176A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种Si基局域发射极双面太阳电池结构 |
CN108461553A (zh) * | 2018-03-12 | 2018-08-28 | 南昌大学 | 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构 |
CN109004043B (zh) * | 2018-07-16 | 2021-03-16 | 南通天盛新能源股份有限公司 | 一种太阳能电池背面电极的制备方法与应用 |
CN109004043A (zh) * | 2018-07-16 | 2018-12-14 | 南通天盛新能源股份有限公司 | 一种太阳能电池背面电极的制备方法与应用 |
CN111640824A (zh) * | 2020-06-11 | 2020-09-08 | 常州时创能源股份有限公司 | 一种双面晶体硅太阳电池及其制备方法 |
CN111640824B (zh) * | 2020-06-11 | 2023-06-02 | 常州时创能源股份有限公司 | 一种双面晶体硅太阳电池及其制备方法 |
CN113328012A (zh) * | 2021-06-24 | 2021-08-31 | 浙江爱旭太阳能科技有限公司 | 降低复合速率的perc电池的制作方法和perc电池 |
CN113328012B (zh) * | 2021-06-24 | 2023-10-03 | 浙江爱旭太阳能科技有限公司 | 降低复合速率的perc电池的制作方法和perc电池 |
CN113964241A (zh) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | N型单晶硅双面太阳电池及其制备方法 |
WO2023065715A1 (zh) * | 2021-10-19 | 2023-04-27 | 通威太阳能(眉山)有限公司 | N型单晶硅双面太阳电池及其制备方法 |
EP4195302A4 (en) * | 2021-10-19 | 2024-01-10 | Tongwei Solar Meishan Co Ltd | N-TYPE SINGLE CRYSTAL SILICON DOUBLE-SIDED SOLAR CELL AND PREPARATION METHOD THEREFOR |
Also Published As
Publication number | Publication date |
---|---|
CN105826411B (zh) | 2017-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105826405A (zh) | 一种单晶硅双面太阳电池及其制备方法 | |
CN105826411B (zh) | 单晶硅双面太阳电池及其制备方法 | |
CN103489934B (zh) | 一种双面透光的局部铝背场太阳能电池及其制备方法 | |
EP3916814B1 (en) | Photovoltaic module, solar cell, and method for producing solar cell | |
CN102246324B (zh) | 深沟槽背接触光伏太阳能电池 | |
US9379270B2 (en) | Bifacial crystalline silicon solar panel with reflector | |
CN113345970A (zh) | 一种p型背接触式晶硅太阳能电池、制备方法及电池组件 | |
CN102931255B (zh) | 一种背接触太阳能电池及其制造方法 | |
US20220278246A1 (en) | Bifacial crystalline silicon solar panel with reflector | |
CN209232797U (zh) | 硅基太阳能电池及光伏组件 | |
CN103887347A (zh) | 一种双面p型晶体硅电池结构及其制备方法 | |
CN102487091B (zh) | 一种新型背接触太阳能电池及其制造方法 | |
CN102468365A (zh) | 双面太阳能电池的制造方法 | |
US20120235268A1 (en) | Photoelectric conversion module, method for manufacturing same, and power generation device | |
CN110190137B (zh) | 一种用于正面接触钝化的双层钝化膜及其制备方法 | |
JP6282635B2 (ja) | 太陽電池の製造方法 | |
CN107195696A (zh) | 一种mwt太阳能电池片及利用其制成的mwt太阳能电池组件 | |
JP2014157874A (ja) | 太陽電池モジュールおよびその製造方法 | |
CN103022174B (zh) | 一种基于n型硅片的金属贯穿式背发射极晶硅太阳电池及其制备方法 | |
Aurang et al. | Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices | |
CN205900558U (zh) | 单晶硅双面太阳电池 | |
JP5968244B2 (ja) | 光電変換モジュールおよびその製造方法 | |
CN205900556U (zh) | 一种单晶硅双面太阳电池 | |
CN111524982A (zh) | 太阳电池 | |
CN214753793U (zh) | 一种p型背接触式晶硅太阳能电池及太阳能电池组件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |