CN106252430A - 一种晶体硅异质结太阳电池 - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- 229910003087 TiOx Inorganic materials 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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Abstract
一种晶体硅异质结太阳电池，其结构从迎光面开始依次为：前电极、TiOx层、晶体硅吸收层、本征非晶硅钝化层、p型非晶硅重掺杂层、背电极。迎光面使用n型掺杂的TiOx与晶体硅形成异质结，而背面使用传统的非晶硅/晶体硅异质结结构。由于TiOx光学带隙较宽，从迎光面入射的太阳光几乎可以全部进入到晶体硅内部，从而避免了由于窗口层的吸收而导致的光生电流损失。另外，TiOx可良好钝化硅片表面且与硅形成良好异质结，有助于增加异质结电池的开路电压。因此，本发明所提出晶体硅异质结太阳电池可同时实现高的开路电压和短路电流，提高晶体硅异质结太阳电池的光电转换效率。
Description
技术领域
本发明属于太阳电池领域，也属于半导体器件领域，涉及硅太阳电池的结构设计。
背景技术
光伏发电是一种重要的清洁能源，在全球环境污染和能源短缺的背景下，光伏发电在最近几十年得到了迅猛发展。然而当前光伏发电的成本仍然高于传统发电成本，若要推动光伏发电的普及，必须降低作为光伏发电主体的太阳电池的制备成本并提高其光电转换效率。
由于硅在地壳中储量丰富且提纯技术相对成熟，另外硅的光学带隙与太阳光谱比较匹配，因此硅材料是一种比较理想的太阳电池制备材料。当前晶体硅太阳电池多数基于同质结结构，其技术较为成熟，转换效率最高可达25%左右。在同质结太阳电池中，内建电场的强弱主要由p-n结两端半导体的掺杂浓度决定。若提高半导体的掺杂浓度，可提高内建电场的强度因而提高开路电压。然而，当半导体掺杂浓度提高到一定程度之后，若进一步提高掺杂浓度，会引起半导体内部载流子的复合因而降低饱和电流密度。为实现最大转换效率，一般会限制p-n结两端半导体的掺杂浓度，因此同质结晶体硅太阳电池的开路电压一般低于700 mV。相比较于同质结太阳电池，异质结太阳电池可充分利用两种不同半导体之间功函数以及能带位置的差异，可以在不增加太阳电池内部载流子复合的前提下增强内建电场的强度，因而可同时实现较大的开路电压（大于700 mV）和短路电流密度。因此，较同质结太阳电池，异质结太阳电池可实现更大的光电转换效率。
目前较为成熟的晶体硅异质结太阳电池是基于非晶硅/晶体硅异质结的HIT电池（典型结构为ITO/α-Si(p)/α-Si(i)/c-Si/α-Si(i)/ α-Si(n)/ITO）。 HIT太阳电池虽然可以实现较大的开路电压（最大750 mV），但是由于作为钝化层和发射极的非晶硅材料带隙较窄且光吸收系数较大，使得一部分太阳光被内部缺陷较多的非晶硅吸收而未能转化成光生电流。虽然通过对非晶硅掺氧等手段可以减小非晶硅层对太阳光的吸收，但掺氧也同时增大了电池串联电阻，因而电池的光电转换效率未能有明显提高。作为其它的解决途径，可将非晶硅替换为其它材料，该材料应能良好钝化硅材料表面并与硅形成良好异质结。
发明内容
本发明的目的是提出一种新结构的晶体硅异质结太阳电池。
本发明所述的一种晶体硅异质结太阳电池，包括前电极、TiOx层、晶体硅吸收层、本征非晶硅钝化层（α-Si(i)）、p型非晶硅重掺杂层（α-Si(p)）、背电极。其结构从迎光面开始依次为：前电极、TiOx层、晶体硅吸收层、本征非晶硅钝化层、p型非晶硅重掺杂层、背电极。
所述的TiOx为n型掺杂。
所述的晶体硅吸收层为n型或p型掺杂，且晶体硅吸收层的硅片进行单面或双面制绒以减小表面反射率。
所述的前电极包含透明导电层和金属栅状电极，同时可在透明导电层或金属栅状电极上使用减反射层以进一步降低表面反射。
所述的后电极包含透明导电层和金属栅状电极，或者单独使用连续的金属电极。
本发明使用n型掺杂的TiOx与作为吸收层的晶体硅形成异质结，以沉积TiOx的一面作为太阳电池的迎光面，而背面使用传统的非晶硅/晶体硅异质结。由于TiOx的光学带隙较大（~3.2 eV），因此入射的太阳光几乎全部被作为吸收层的硅所吸收，从而避免了传统HIT结构中由于非晶硅的吸收而导致的光生电流损失的问题。另外，由于TiOx的导带位置稍高于硅的导带（<0.3eV）而价带位置远低于硅的价带（>2.0eV），所形成的导带阶有助于增强Si/TiOx异质结的内建电场，而价带阶可抑制暗电流或反向饱和电流。同时，TiOx可对硅表面形成有效钝化，加上异质结本身的场钝化效果，可显著降低Si/TiOx异质结界面处光生载流子的复合。背面的非晶硅/晶体硅异质结，可形成有效的背电场并钝化硅片背表面，可增强开路电压并抑制背表面处光生载流子的复合。综上所述，本发明所提出的新型晶体硅太阳电池结构可使太阳电池同时拥有较高的开路电压和短路电流密度，保证太阳电池的高光电转换效率。
本发明所提出的新结构晶体硅异质结电池，可以在提高开路电压的前提下避免光生电流的损失。使晶体硅太阳电池同时具有高的开路电压和短路电流，从而提高晶体硅太阳电池的光电转换效率。本发明所提出的晶体硅异质结电池中的TiOx层可使用低温制备工艺（如使用原子层沉积，制备温度可低于300°C），因此整个电池制备工艺可无需高温环节，从而降低硅太阳电池制备过程中的能源损耗。另外，根据背电极形式的不同，本发明所提出的新结构晶体硅异质结电池可为双面太阳电池或单面太阳电池，可根据具体的使用环境选择太阳电池的具体结构。
附图说明
附图1为本发明晶体硅异质结太阳电池结构示意图。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
（1）对硅片进行初步清洗，双面制绒。
（2）用氢氟酸去掉硅片表面氧化层，使用等离子增强化学气相沉积制备非晶硅钝化层和p型重掺杂非晶硅发射极。
（3）在非晶硅钝化层和p型重掺杂非晶硅发射极溅射制备ITO透明导电层，随后制备Ag金属栅线。
（4）硅片表面反转，在另一面使用原子层外延沉积TiOx层。
（5）沉积金属Ag，制备背电极。
实施例2。
（1）对硅片进行初步清洗，双面制绒。
（2）用氢氟酸去掉硅片表面氧化层，使用热丝化学气相沉积制备非晶硅钝化层和p型重掺杂非晶硅发射极。
（3）在非晶硅钝化层和p型重掺杂非晶硅发射极溅射制备AZO透明导电层，随后制备Cu金属栅线。
（4）硅片表面反转，在另一面使用化学气相沉积制备TiOx层。
（5）在TiOx层上溅射沉积AZO作为透明导电层，制备Cu金属栅线。
Claims (6)
1.一种晶体硅异质结太阳电池，其特征是包括前电极、TiOx层、晶体硅吸收层、本征非晶硅钝化层、p型非晶硅重掺杂层、背电极；其结构从迎光面开始依次为：前电极、TiOx层、晶体硅吸收层、本征非晶硅钝化层、p型非晶硅重掺杂层、背电极。
2.根据权利要求1所述的晶体硅异质结太阳电池，其特征是所述的TiOx为n型掺杂。
3.根据权利要求1所述的晶体硅异质结太阳电池，其特征是所述的晶体硅吸收层为n型或p型掺杂，且晶体硅吸收层的硅片进行单面或双面制绒以减小表面反射率。
4.根据权利要求1所述的晶体硅异质结太阳电池，其特征是所述的前电极包含透明导电层和金属栅状电极。
5.根据权利要求4所述的晶体硅异质结太阳电池，其特征是在透明导电层或金属栅状电极上使用减反射层。
6.根据权利要求1所述的晶体硅异质结太阳电池，其特征是所述的后电极包含透明导电层和金属栅状电极，或者单独使用连续的金属电极。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108336155A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种hac-d晶体硅双面太阳电池结构 |
| CN108336157A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构 |
| CN108336156A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种具有hac-d特征的晶体硅双面太阳电池结构 |
| CN108461553A (zh) * | 2018-03-12 | 2018-08-28 | 南昌大学 | 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构 |
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| CN206271715U (zh) * | 2016-09-14 | 2017-06-20 | 南昌大学 | 一种晶体硅异质结太阳电池 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108336155A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种hac-d晶体硅双面太阳电池结构 |
| CN108336157A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种局域非晶硅发射极晶体硅背场的双面太阳电池结构 |
| CN108336156A (zh) * | 2018-03-12 | 2018-07-27 | 南昌大学 | 一种具有hac-d特征的晶体硅双面太阳电池结构 |
| CN108461553A (zh) * | 2018-03-12 | 2018-08-28 | 南昌大学 | 一种具有局域非晶硅/晶体硅异质结特性的双面太阳电池结构 |
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