CN106298983A - 一种基于Si/NiOx异质结的晶体硅太阳电池 - Google Patents
一种基于Si/NiOx异质结的晶体硅太阳电池 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 16
- 230000005684 electric field Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910003087 TiOx Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000010248 power generation Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 150000003376 silicon Chemical class 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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Abstract
一种基于Si/NiOx异质结的晶体硅太阳电池，包括前电极、NiOx层、晶体硅吸收层、背电场、背电极。其结构从迎光面开始依次为：前电极、NiOx层、晶体硅吸收层、背电场、背电极。该结构可有效降低太阳电池内部光生载流子的复合，提高太阳电池光电转换效率。该晶体硅异质结电池可使用已有晶体硅太阳电池生产设备制备背电场，其双面进光结构可充分利用太阳光资源，增加光伏组件实际发电量。
Description
技术领域
本发明属于太阳电池领域，也属于半导体器件领域，涉及硅太阳电池的结构设计。
背景技术
硅在地球上储量丰富，且硅的光学带隙与太阳光谱较为匹配，是制备太阳电池的理想材料之一。由于硅材料的提纯技术以及硅半导体器件的制备技术比较成熟，晶体硅太阳电池占据了当前太阳电池总产量的大部分份额。然而，随着工艺的进步，基于同质结结构的晶体硅太阳电池其光电转换效率已逐渐逼近极限。而异质结太阳电池可以充分利用两种不同半导体之间功函数和能带位置的差异，可以在不减小短路电流的情况下提高太阳电池的开路电压，从而提高太阳电池的光电转换效率。因此，基于异质结的晶体硅太阳电池有望在未来获得光电转换效率的进一步提升。
为提高太阳电池的转换效率，必须尽可能地降低太阳电池内部光生载流子的复合。而在异质结太阳电池中，由于构成异质结的两种半导体材料晶格常数存在差异，异质结界面处往往存在缺陷态而导致光生载流子在异质结界面处大量复合。因此，在异质结太阳电池的设计中，必须采取措施抑制界面复合。
在异质结太阳电池中，选择性接触的使用被认为是减少界面复合的有效措施之一。所谓选择性接触，是利用形成异质结的半导体材料之间导带和价带位置的差异或者半导体内部的能带弯曲，在异质结界面形成对少数载流子的势垒。在所形成的势垒的影响下，少数载流子向选择性接触的输运被阻止但多数载流子的输运却不受影响。因此，少数载流子被阻止靠近界面态，从而抑制其与多数载流子经表面缺陷态形成复合。同时，异质结界面处形成的对少数载流子的势垒可以有效减小暗电流，提高开路电压。另一方面，对多数载流子而言，由于其传输并未受到显著影响，因此短路电流密度并不会减小。
发明内容
本发明的目的是提出一种基于Si/NiOx异质结的晶体硅太阳电池。
本发明是通过以下技术方案实现的。
本发明所述的一种基于Si/NiOx异质结的晶体硅太阳电池，包括前电极、NiOx层、晶体硅吸收层、背电场、背电极。其结构从迎光面开始依次为：前电极、NiOx层、晶体硅吸收层、背电场、背电极。
所述的NiOx层为p型掺杂。
所述的晶体硅吸收层为n型或p型掺杂。
所述的背电场使用但不限于以下三种形式：n型掺杂层加氮化硅钝化层，或者本征非晶硅钝化层加n型非晶硅重掺杂层，或者n型掺杂的TiOx层。
所述的前电极包含透明导电层和金属栅状电极。
所述的背电极包含透明导电层和金属栅状电极，或仅包含金属栅状电极。
本发明使用p型掺杂的NiOx与晶体硅形成异质结并将其应用于太阳电池中。NiOx是一种过渡金属氧化物半导体，光学带隙约为3eV。NiOx的电子亲和能较小（约为-2.1eV），因此其导带往往高于其他半导体材料的导带，可作为对空穴的选择性接触材料应用在钙钛矿太阳电池中。与硅相比，NiOx的导带位置远高于硅的导带位置（~2eV），而价带位置略低于硅的价带位置（<0.3eV）。因此，若p型掺杂的NiOx与硅形成异质结，导带在异质结界面处的势垒差可阻止光生电子靠近异质结界面。价带在界面处虽然也会形成对空穴的势垒，但由于势垒能量较小，不会对光生空穴的传输产生显著影响。而且，界面处价带的势垒差会使硅在靠近异质结界面处的价带产生弯曲，有利于开路电压的提高。
本发明所提出的Si/NiOx异质结太阳电池可使用不同的背电场，如由扩散工艺制备的n型硅掺杂层，或本征非晶硅钝化层和n型非晶硅重掺杂层，或n型掺杂的TiOx层。多种形式的背电场可充分利用现有的晶体硅太阳电池生产设备，避免对设备的重复投资。另外，本发明所提出的晶体硅异质结太阳电池为双面进光结构，可充分利用太阳光资源，提高光伏组件实际发电量。
本发明所提出的基于Si/NiOx异质结的晶体硅太阳电池，可以有效降低太阳电池内部光生载流子的复合，从而提高其光电转换效率。本发明所提出的晶体硅异质结电池的背电场结构可以充分利用已有晶体硅太阳电池生产设备进行生产，减少了设备方面的投入。另外，本发明所提出的晶体硅异质结电池采用双面进光结构，可更充分的利用太阳光，增加光伏组件实际发电量。
附图说明
附图1为本发明的太阳电池结构示意图。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
（1）对硅片进行初步清洗，双面制绒。
（2）使用扩散工艺制备背面n型掺杂层。
（3）背面沉积氮化硅或氧化铝钝化层，随后制备栅状Ag电极。
（4）对硅片正面进行二次清洗。
（5）在硅片正面使用原子层沉积制备NiOx层。
（6）沉积ITO透明导电层和Ag金属栅线，制备前电极。
实施例2。
（1）对硅片进行初步清洗，双面制绒。
（2）用氢氟酸去掉硅片表面氧化层，使用等离子增强化学气相沉积制备非晶硅钝化层和n型重掺杂非晶硅发射极。
（3）沉积ITO作为透明导电层，沉积Ag金属栅线，制备背电极。
（4）硅片反转，使用化学气相沉积制备NiOx层。
（5）沉积ITO作为透明导电层，沉积Ag金属栅线，制备前电极。
实施例3。
（1）对硅片进行初步清洗，双面制绒。
（2）使用蒸发工艺沉积NiOx层。
（3）沉积AZO作为透明导电层，沉积Cu金属栅线，制备前电极。
（4）硅片发转，使用原子层沉积制备TiOx层。
（5）沉积ITO透明导电层和Ag金属栅线，制备背电极。
Claims (6)
1.一种基于Si/NiOx异质结的晶体硅太阳电池，其特征是包括前电极、NiOx层、晶体硅吸收层、背电场、背电极；其结构从迎光面开始依次为：前电极、NiOx层、晶体硅吸收层、背电场、背电极。
2.根据权利要求1所述的晶体硅太阳电池，其特征是所述的NiOx层为p型掺杂。
3.根据权利要求1所述的晶体硅太阳电池，其特征是所述的晶体硅吸收层为n型或p型掺杂。
4.根据权利要求1所述的晶体硅太阳电池，其特征是所述的背电场为以下三种形式：n型掺杂层加氮化硅钝化层，或者本征非晶硅钝化层加n型非晶硅重掺杂层，或者n型掺杂的TiOx层。
5.根据权利要求1所述的晶体硅太阳电池，其特征是所述的前电极包含透明导电层和金属栅状电极。
6.根据权利要求1所述的晶体硅太阳电池，其特征是所述的背电极为透明导电层和金属栅状电极，或者金属栅状电极。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410321A (zh) * | 2021-06-21 | 2021-09-17 | 吉林师范大学 | 一种具有梯度空穴收集层的太阳电池的制备方法 |
| CN114883425A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种晶硅异质结太阳电池的迎光面结构 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104993006A (zh) * | 2015-05-22 | 2015-10-21 | 暨南大学 | 一种过渡金属氧化物-硅异质结太阳能电池及其制备方法 |
| CN105556681A (zh) * | 2013-10-04 | 2016-05-04 | 旭化成株式会社 | 太阳能电池及其制造方法、半导体元件及其制造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN104993006A (zh) * | 2015-05-22 | 2015-10-21 | 暨南大学 | 一种过渡金属氧化物-硅异质结太阳能电池及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113410321A (zh) * | 2021-06-21 | 2021-09-17 | 吉林师范大学 | 一种具有梯度空穴收集层的太阳电池的制备方法 |
| CN113410321B (zh) * | 2021-06-21 | 2022-09-16 | 吉林师范大学 | 一种具有梯度空穴收集层的太阳电池的制备方法 |
| CN114883425A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种晶硅异质结太阳电池的迎光面结构 |
| CN114883425B (zh) * | 2022-05-25 | 2023-11-21 | 中国科学院电工研究所 | 一种晶硅异质结太阳电池的迎光面结构 |
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