CN114582983A - 异质结太阳能电池及其制备方法 - Google Patents
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Abstract
本发明涉及一种异质结太阳能电池及其制备方法,属于太阳能电池制造技术领域。包括晶硅衬底,晶硅衬底正面依次沉积有正面本征非晶硅层、N型掺杂层、正面TCO层和正面金属电极;晶硅衬底背面依次沉积有背面本征非晶硅层、P型掺杂层、背面TCO层和背面金属电极,正面金属电极中的细栅电极和未被金属电极遮挡的正面TCO层上覆盖含有下转换荧光材料的功能性薄膜。通过引入含有下转换荧光材料的功能性薄膜,可以将太阳能电池不能利用的短波区的光子转换为与其光谱响应相匹配的光子能量,即吸收400nm以下的光子,转换为400‑1100 nm的低能光子,促进了电池对太阳光照的吸收利用,提升了异质结太阳能电池的转换效率,同时削弱了部分紫外光对电池的损伤作用。
Description
技术领域
本发明涉及太阳能电池制造技术领域,尤其涉及一种异质结太阳能电池及其制备方法。
背景技术
随着世界能源需求的日益增长,碳排放问题的加剧,清洁能源体系的开发迫在眉睫。太阳能电池技术作为最具潜力的新能源技术,近年来被广泛研究。其中,硅基太阳能电池因效率优势,在光伏行业的应用规模和工业量产中占主导地位。既PERC(背钝化接触电池)电池技术之后,HJT(硅基异质结电池)、TopCON(隧穿氧化层钝化接触)、IBC(指叉型背接触电池)被认为是当前最具潜力的三大高效电池技术。截至2022年03月,出具效率认证报告的所有电池技术中,IBC电池技术的最高效率为26.6%,HJT电池技术的最高效率为26.30%,TopCON电池技术的最高效率为26.00%,但是目前具备产业化能力的的硅基太阳能电池效率普遍低于25%,而纯晶硅电池的理论效率极限为29.4%,实际量产效率与理论结果的差距,说明量产的电池技术仍然还有很大的可优化空间。
对于上述晶硅电池来说,光电转换效率在电池生产和应用的过程中受到了多种因素的制约,其中光子利用率是影响光电转换效率的主要因素之一。光子照射在电池表面时,一部分被电池基体有效吸收,还有很大一部分被反射、透射和热化损失。效率损失主要来自于高于带隙能量光子的热化损失,以及低于带隙能量光子不能被吸收利用的损失。其中,部分紫外短波光子因所带能量高于硅太阳能电池的禁带宽度,而导致多出的部分能量会以热的形式损失,这不仅造成了短波光子能量损失,产生的热也会对电池的输出功率造成不利影响。这种短波光子的损失效应在异质结电池结构中尤为明显,这是因为标准异质结电池结构中的非晶硅膜层较常规扩散层厚,掺杂非晶硅层和本征非晶硅层的厚度约8-15nm,这导致非晶硅膜层在短波区对的光子吸收率增加,从而到达基体的光子减少,进一步降低光子的有效利用率,影响了电池的最终转换效率。
针对以上问题,需要一种有效的解决方案,来提高紫外光区的光子利用率,同时提高太阳能电池的转换效率。
发明内容
为解决上述技术问题,本发明提供一种异质结太阳能电池及其制备方法。本发明的技术方案如下:
第一方面,提供了一种异质结太阳能电池,其包括晶硅衬底,所述晶硅衬底正面依次沉积有正面本征非晶硅层、N型掺杂层、正面TCO层和正面金属电极;所述晶硅衬底背面依次沉积有背面本征非晶硅层、P型掺杂层、背面TCO层和背面金属电极,所述正面金属电极中的细栅电极和未被金属电极遮挡的正面TCO层上覆盖功能性薄膜,所述功能性薄膜中含有下转换荧光材料。
可选地,所述正面本征非晶硅层和背面本征非晶硅层的厚度均为3-15nm,为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层。
可选地,所述N型掺杂层和P型掺杂层的厚度均为5-25nm,为掺杂型的非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层;或者为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种与非掺杂材料的混合膜层。
可选地,所述正面TCO层和背面TCO层为包含TCO薄膜的混合膜层,所述TCO薄膜为掺杂的氧化锌、掺杂的氧化铟、FTO中的一种或者至少两种的复合膜层。
可选地,所述正面金属电极和背面金属电极为银电极、铜电极、银铜电极或铝电极;正面金属电极位于异质结太阳能电池的入光面上,包括细栅电极和主栅电极,或细栅电极和细栅连接点。
可选地,所述功能性薄膜的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
可选地,所述氟化物基体为NaYF4: Tb3+,Yb3+;所述YAG基体为YAG:Ce3+,Yb3+。
第二方面,提供了一种异质结太阳能电池的制备方法,其包括:
S1,对晶硅衬底进行清洗,并进行织构化制绒得到金字塔状陷光界面;
S2:在制绒后的晶硅衬底上表面分别沉积正面本征非晶硅层、N型掺杂层,在制绒后的晶硅衬底下表面分别沉积背面本征非晶硅层和P型掺杂层;
S3:在N型掺杂层上表面沉积正面TCO层,在P型掺杂层下表面沉积背面TCO层;
S4:在正面TCO层和背面TCO层上分别制备正面金属电极和背面金属电极,得到异质结太阳能电池基体;
S5:在异质结太阳能电池基体的入光面上制备功能性薄膜,得到异质结太阳能电池,所述功能性薄膜中含有下转换荧光材料。
可选地,所述功能性薄膜的制备方法为:在SiO2溶胶中分散NaYF4: Tb3+, Yb3+,形成均匀分散的混合物后,采用浸泡、慢提拉或旋涂的方式将混合物转移到异质结太阳能电池基体上,经过40-120℃干燥后,形成功能性薄膜。
可选地,所述功能性薄膜的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
上述所有可选地技术方案均可任意组合,本发明不对一一组合后的结构进行详细说明。
借由上述方案,本发明通过在异质结太阳能电池中引入含有下转换荧光材料的功能性薄膜,可以将太阳能电池不能利用的短波区的光子转换为与其光谱响应相匹配的光子能量,即吸收400nm以下的光子,转换为 400-1100 nm 的低能光子,促进了电池对太阳光照的吸收利用,提升了异质结太阳能电池的转换效率。此外,还能通过对短波区光子的转换功能,来削弱紫外光对异质结太阳能电池的损伤作用。同时,功能性薄膜还能与TCO材料(正面TCO层和背面TCO层)一同作为复合减反膜,增强了复合膜层的陷光作用,减少光子的反射,增强光子的利用率。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1是本发明提供的异质结太阳能电池的结构示意图。
图2是现有技术的异质结太阳能电池的结构示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
如图1所示,本发明提供的异质结太阳能电池,其包括晶硅衬底1,所述晶硅衬底1正面依次沉积有正面本征非晶硅层2、N型掺杂层3、正面TCO层4和正面金属电极5;所述晶硅衬底1背面依次沉积有背面本征非晶硅层6、P型掺杂层7、背面TCO层8和背面金属电极9,所述正面金属电极5中的细栅电极和未被金属电极遮挡的正面TCO层4上覆盖功能性薄膜10,所述功能性薄膜10中含有下转换荧光材料。其中,所述功能性薄膜的设置不影响主栅电极的焊接拉力以及主栅电极的粘结力。
可选地,所述正面本征非晶硅层2和背面本征非晶硅层6的厚度均为3-15nm,为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层。
可选地,所述N型掺杂层3和P型掺杂层7的厚度均为5-25nm,为掺杂型的非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层;或者为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种与非掺杂材料的混合膜层。
可选地,所述正面TCO层4和背面TCO层8为包含TCO薄膜的混合膜层,所述TCO薄膜为掺杂的氧化锌、掺杂的氧化铟、FTO中的一种或者至少两种的复合膜层。
可选地,所述正面金属电极5和背面金属电极9为银电极、铜电极、银铜电极或铝电极;正面金属电极5位于异质结太阳能电池的入光面上,包括细栅电极和主栅电极,或细栅电极和细栅连接点。
可选地,所述功能性薄膜10的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
可选地,所述氟化物基体为NaYF4: Tb3+,Yb3+;所述YAG基体为YAG:Ce3+,Yb3+。
上述异质结太阳能电池的制备方法包括如下步骤:
S1,对晶硅衬底1进行清洗,并进行织构化制绒得到金字塔状陷光界面。
其中,制绒过程所用化学品为KOH与制绒添加剂。
S2:在制绒后的晶硅衬底1上表面分别沉积正面本征非晶硅层2、N型掺杂层3,在制绒后的晶硅衬底1下表面分别沉积背面本征非晶硅层6和P型掺杂层7。
沉积设备选择板式PECVD或者HWCVD。正面本征非晶硅层2的沉积厚度为3-8nm。N型掺杂层3的掺杂浓度为3%,沉积厚度为5-9nm。背面本征非晶硅层6的沉积厚度为5-10nm。P型掺杂层7的沉积厚度为5-9nm,掺杂浓度控制在3-7%。
S3:在N型掺杂层3上表面沉积正面TCO层4,在P型掺杂层7下表面沉积背面TCO层8。
设备选用PVD。正面TCO层4和背面TCO层8的厚度均为50-150nm,优选为110nm。
S4:在正面TCO层4和背面TCO层8上分别制备正面金属电极5和背面金属电极9,得到异质结太阳能电池基体。
S5:在异质结太阳能电池基体的入光面上制备功能性薄膜10,得到异质结太阳能电池,所述功能性薄膜10中含有下转换荧光材料。
可选地,所述功能性薄膜10的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
具体地,所述功能性薄膜10的一种制备方法可以为:在SiO2溶胶中分散NaYF4: Tb3 +,Yb3+,形成均匀分散的混合物后,采用浸泡、慢提拉或旋涂的方式将混合物转移到异质结太阳能电池基体上,经过40-120℃干燥后,形成功能性薄膜10。
为了突出本发明实施例提供的异质结太阳能电池的特点,现在再介绍一下现有技术的异质结太阳能电池的结构。如图2所示,其为现有技术的异质结太阳能电池的结构示意图。该异质结太阳能电池包括晶硅衬底100,位于晶硅衬底100上表面的第一本征非晶硅层101和下表面的第二本征非晶硅层105;设置于第一本征非晶硅层101上表面的N型掺杂层102;设置于第二本征非晶硅层105下表面的P型掺杂层106;设置于N型掺杂层102上表面的正面TCO层103;设置于P型掺杂层106下表面的背面TCO层107,分别设置于正面TCO层103上表面和背面TCO层107下表面的正面银电极104和背面银电极108。
将本发明实施例提供的异质结太阳能电池(实验组)与现有技术的异质结太阳能电池(对比组)进行实验,得到如表一所示的实验结果。表一中的电池参数:Eta为电池的转换效率(%),Voc为电池的开路电压(V),Isc为短路电流(mA),FF为电池的填充因子(%)。从表一可以看出,本发明实施例提供的异质结太阳能电池有更好的光谱响应,更为重要的是,与现有技术的异质结太阳能电池相比,本发明实施例提供的异质结太阳能电池的Isc高出40-130mA,最终转换效率高出0.1-0.3%。
表一
综上所述,本发明实施例提供的异质结太阳能电池,通过引入含有下转换荧光材料的功能性薄膜10,可以将太阳能电池不能利用的短波区的光子转换为与其光谱响应相匹配的光子能量,即吸收400nm以下的光子,转换为 400-1100 nm 的低能光子,促进了电池对太阳光照的吸收利用,进而提升了异质结太阳能电池的转换效率。进一步地,由于荧光材料中的 Yb3+离子的发光波长在 1000 nm 左右,刚好与硅的禁带宽度匹配,避免了能量的损失,促进了电池对太阳光照的吸收利用,进而提升了异质结太阳能电池的转换效率。此外,还能通过对短波区光子的转换功能,来削弱紫外光对异质结太阳能电池的损伤作用。另外,功能性薄膜10还能与TCO材料一同作为复合减反膜,增强了复合膜层的陷光作用,减少了光子的反射,增强了光子的利用率。
以上所述仅是本发明的优选实施方式,并不用于限制本发明,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,这些改进和变型也应视为本发明的保护范围。
Claims (10)
1.一种异质结太阳能电池,其特征在于,包括晶硅衬底(1),所述晶硅衬底(1)正面依次沉积有正面本征非晶硅层(2)、N型掺杂层(3)、正面TCO层(4)和正面金属电极(5);所述晶硅衬底(1)背面依次沉积有背面本征非晶硅层(6)、P型掺杂层(7)、背面TCO层(8)和背面金属电极(9),所述正面金属电极(5)中的细栅电极和未被金属电极遮挡的正面TCO层(4)上覆盖功能性薄膜(10),所述功能性薄膜(10)中含有下转换荧光材料。
2.根据权利要求1所述的异质结太阳能电池,其特征在于,所述正面本征非晶硅层(2)和背面本征非晶硅层(6)的厚度均为3-15nm,为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层。
3.根据权利要求1所述的异质结太阳能电池,其特征在于,所述N型掺杂层(3)和P型掺杂层(7)的厚度均为5-25nm,为掺杂型的非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种或者至少两种的复合膜层;或者为非晶硅、微晶硅、纳米晶硅、非晶/微晶硅碳、非晶/微晶硅氧材料中的一种与非掺杂材料的混合膜层。
4.根据权利要求1所述的异质结太阳能电池,其特征在于,所述正面TCO层(4)和背面TCO层(8)为包含TCO薄膜的混合膜层,所述TCO薄膜为掺杂的氧化锌、掺杂的氧化铟、FTO中的一种或者至少两种的复合膜层。
5.根据权利要求1所述的异质结太阳能电池,其特征在于,所述正面金属电极(5)和背面金属电极(9)为银电极、铜电极、银铜电极或铝电极;正面金属电极(5)位于异质结太阳能电池的入光面上,包括细栅电极和主栅电极,或细栅电极和细栅连接点。
6.根据权利要求1所述的异质结太阳能电池,其特征在于,所述功能性薄膜(10)的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
7.根据权利要求6所述的异质结太阳能电池,其特征在于,所述氟化物基体为NaYF4:Tb3+,Yb3+;所述YAG基体为YAG:Ce3+,Yb3+。
8.一种权利要求1至7中任一权利要求所述的异质结太阳能电池的制备方法,其特征在于,包括:
S1,对晶硅衬底(1)进行清洗,并进行织构化制绒得到金字塔状陷光界面;
S2:在制绒后的晶硅衬底(1)上表面分别沉积正面本征非晶硅层(2)、N型掺杂层(3),在制绒后的晶硅衬底(1)下表面分别沉积背面本征非晶硅层(6)和P型掺杂层(7);
S3:在N型掺杂层(3)上表面沉积正面TCO层(4),在P型掺杂层(7)下表面沉积背面TCO层(8);
S4:在正面TCO层(4)和背面TCO层(8)上分别制备正面金属电极(5)和背面金属电极(9),得到异质结太阳能电池基体;
S5:在异质结太阳能电池基体的入光面上制备功能性薄膜(10),得到异质结太阳能电池,所述功能性薄膜(10)中含有下转换荧光材料。
9.根据权利要求8所述的异质结太阳能电池的制备方法,其特征在于,所述功能性薄膜(10)的制备方法为:在SiO2溶胶中分散NaYF4: Tb3+,Yb3+,形成均匀分散的混合物后,采用浸泡、慢提拉或旋涂的方式将混合物转移到异质结太阳能电池基体上,经过40-120℃干燥后,形成功能性薄膜(10)。
10.根据权利要求8所述的异质结太阳能电池的制备方法,其特征在于,所述功能性薄膜(10)的原料为胶体、液体、溶胶或凝胶,主体为PMMA、EVA、POE或氧化硅,荧光材料为氟化物基体或YAG基体。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115172481A (zh) * | 2022-09-08 | 2022-10-11 | 福建金石能源有限公司 | 异质结太阳能电池 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101510575A (zh) * | 2009-03-27 | 2009-08-19 | 南开大学 | 一种聚酰亚胺塑料衬底柔性硅基薄膜太阳电池集成组件的制造方法 |
CN101582332A (zh) * | 2009-06-29 | 2009-11-18 | 中国科学院等离子体物理研究所 | 下转换发光材料在染料敏化太阳电池上的应用 |
CN103703567A (zh) * | 2012-04-25 | 2014-04-02 | 株式会社钟化 | 太阳能电池及其制造方法以及太阳能电池模块 |
CN105720114A (zh) * | 2016-04-15 | 2016-06-29 | 乐叶光伏科技有限公司 | 一种用于晶体硅太阳能电池的量子裁剪透明电极 |
CN109929203A (zh) * | 2019-02-27 | 2019-06-25 | 南京航空航天大学 | 一种波长转换发光薄膜的制备方法 |
CN110828666A (zh) * | 2018-08-07 | 2020-02-21 | 东泰高科装备科技(北京)有限公司 | 柔性钙钛矿量子点薄膜-砷化镓异质结电池及其制备方法 |
CN111653644A (zh) * | 2020-06-08 | 2020-09-11 | 晋能光伏技术有限责任公司 | 一种硅基异质结太阳能电池及其制备方法 |
JP3233436U (ja) * | 2021-04-20 | 2021-08-12 | 五十嵐 五郎 | 基地局に設けた両面入射のハイブリッド型ダイヤモンド薄膜太陽電池装置。 |
-
2022
- 2022-05-06 CN CN202210484792.9A patent/CN114582983A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101510575A (zh) * | 2009-03-27 | 2009-08-19 | 南开大学 | 一种聚酰亚胺塑料衬底柔性硅基薄膜太阳电池集成组件的制造方法 |
CN101582332A (zh) * | 2009-06-29 | 2009-11-18 | 中国科学院等离子体物理研究所 | 下转换发光材料在染料敏化太阳电池上的应用 |
CN103703567A (zh) * | 2012-04-25 | 2014-04-02 | 株式会社钟化 | 太阳能电池及其制造方法以及太阳能电池模块 |
CN105720114A (zh) * | 2016-04-15 | 2016-06-29 | 乐叶光伏科技有限公司 | 一种用于晶体硅太阳能电池的量子裁剪透明电极 |
CN110828666A (zh) * | 2018-08-07 | 2020-02-21 | 东泰高科装备科技(北京)有限公司 | 柔性钙钛矿量子点薄膜-砷化镓异质结电池及其制备方法 |
CN109929203A (zh) * | 2019-02-27 | 2019-06-25 | 南京航空航天大学 | 一种波长转换发光薄膜的制备方法 |
CN111653644A (zh) * | 2020-06-08 | 2020-09-11 | 晋能光伏技术有限责任公司 | 一种硅基异质结太阳能电池及其制备方法 |
JP3233436U (ja) * | 2021-04-20 | 2021-08-12 | 五十嵐 五郎 | 基地局に設けた両面入射のハイブリッド型ダイヤモンド薄膜太陽電池装置。 |
Non-Patent Citations (1)
Title |
---|
殷惠敏: "用于晶硅太阳能电池增效的转光材料的研究", 《中国优秀硕士学位论文全文数据库(电子期刊)》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115172481A (zh) * | 2022-09-08 | 2022-10-11 | 福建金石能源有限公司 | 异质结太阳能电池 |
CN115172481B (zh) * | 2022-09-08 | 2022-12-20 | 福建金石能源有限公司 | 异质结太阳能电池 |
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