CN117153925A - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN117153925A CN117153925A CN202311305291.0A CN202311305291A CN117153925A CN 117153925 A CN117153925 A CN 117153925A CN 202311305291 A CN202311305291 A CN 202311305291A CN 117153925 A CN117153925 A CN 117153925A
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- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000004888 barrier function Effects 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- -1 silver-aluminum Chemical compound 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 4
- 239000002905 metal composite material Substances 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application discloses a solar cell and a photovoltaic module, wherein the solar cell comprises: a substrate; a first doped layer; a second doped layer; a dielectric layer; a first electrode; the first doping layer comprises a first doping region with a first doping concentration and a second doping region with a second doping concentration, wherein the first doping region is in electrical contact with the first electrode, the first doping concentration is larger than the second doping concentration, a plurality of protruding structures are formed on one side of the front surface of the substrate, the first doping region is located inside the surfaces of the protruding structures, at least part of the side walls of the protruding structures are partially covered with a barrier layer, and the crystal structure of the barrier layer is different from that of the second doping layer. Compared with the prior art, the method has the advantages that the barrier layer is formed on the front surface of the substrate, so that the influence degree of metallization, particularly a silver-aluminum paste system, on the emission level is restrained, the metal composite loss is further reduced, the battery open-voltage and the filling factor are increased, and finally the conversion efficiency of the battery is improved.
Description
Technical Field
The application relates to the technical field of photovoltaic cells, in particular to a solar cell and a photovoltaic module.
Background
TOPCon (Tunnel Oxide Passivating Contacts) the cell is a solar cell based on the selective carrier principle where the tunneling oxide layer passivates contacts. Boron diffusion is adopted on the front surface of the N-type TOPCO battery, and silver-aluminum paste needs to be matched for sintering matching. The diffusion depth of the aluminum element in silicon is relatively deep, typically above 0.5 microns.
Disclosure of Invention
The application aims to provide a solar cell and a photovoltaic module so as to solve the problems in the prior art.
The present application provides a solar cell comprising:
a substrate having a front surface and a back surface, the front surface and the back surface being disposed opposite in a first direction;
a first doped layer having a first doping type at a front surface of the substrate;
a second doped layer having a second doping type on the back surface of the substrate, the second doping type being opposite to the first doping type;
a dielectric layer between the substrate and the second doped layer;
a first electrode in electrical contact with the first doped layer;
the first doped layer comprises a first doped region with a first doping concentration and a second doped region with a second doping concentration, wherein the first doped region is in electrical contact with the first electrode, and the first doping concentration is greater than the second doping concentration;
a plurality of protruding structures are formed on one side of the front surface of the substrate, the first doped region is located inside the surfaces of the protruding structures, at least part of the side walls of the protruding structures are partially covered with a barrier layer, and the crystal structure of the barrier layer is different from that of the second doped layer.
A solar cell as described above, wherein preferably the substrate comprises a monocrystalline silicon substrate and the barrier layer comprises an amorphous silicon layer.
A solar cell as described above, wherein preferably the crystalline structure of the barrier layer is different from the crystalline structure of the second doped layer.
A solar cell as described above, wherein preferably the second doped layer comprises at least one of microcrystalline silicon, polycrystalline silicon, or monocrystalline silicon.
A solar cell as described above, wherein preferably the barrier layer comprises a silicon-containing material of a different crystal structure than the substrate.
A solar cell as described above, wherein preferably, along the first direction, the ratio of the height of the barrier layer to the height of the raised structure comprises 20% -35%.
A solar cell as described above, wherein preferably the convex structure comprises a pyramid-like texture, a quadrangular frustum-like texture, or a linear texture.
A solar cell as described above, wherein preferably the barrier layer is located on a side wall of the pyramid-like texture, the quadrangular pyramid-like texture, or the linear texture.
A solar cell as described above, wherein preferably the thickness of the barrier layer is no greater than 30nm.
In the solar cell as described above, it is preferable that a surface of the first doped layer facing away from the substrate is formed with a first passivation layer, and the first electrode is in electrical contact with the first doped region after penetrating through the first passivation layer.
In the solar cell as described above, preferably, a surface of the second doped layer on a side facing away from the substrate is formed with a second passivation layer, and the second electrode is in electrical contact with the second doped layer after penetrating through the second passivation layer.
The application also provides a photovoltaic module, comprising:
the battery string is formed by connecting the solar batteries;
an encapsulation layer for covering the surface of the battery string;
and the cover plate is used for covering the surface, far away from the battery strings, of the packaging layer.
Compared with the prior art, the method has the advantages that the barrier layer is formed on the front surface of the substrate, so that the influence degree of metallization, particularly a silver-aluminum paste system, on the emission level is restrained, the metal composite loss is further reduced, the battery open-voltage and the filling factor are increased, and finally the conversion efficiency of the battery is improved.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell provided by the present application;
fig. 2 is an SEM illustration of the front surface of the substrate of the solar cell provided by the application;
FIG. 3 is a schematic view of laser spots for preparing a solar cell provided by the present application;
fig. 4 is a schematic structural diagram of the photovoltaic module provided by the application.
Reference numerals illustrate: 1-substrate, 2-front surface, 3-back surface, 4-first doped layer, 41-first doped region, 42-second doped region, 5-second doped layer, 6-dielectric layer, 7-first electrode, 8-second electrode, 9-first passivation layer, 10-second passivation layer, 11-bump structure, 12-barrier layer, 13-cell string, 14-encapsulation layer, 15-cap.
S-laser facula;
d1—first direction.
Detailed Description
The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
In the prior art, an electrode is formed by adopting silver-aluminum paste to contact with an emitter layer in the N-type TOPCon (Tunnel Oxide Pass ivat ing Contacts) battery, and the diffusion depth of aluminum element in the emitter layer is deeper, usually more than 0.5 micrometer, so that the conversion efficiency of the battery is reduced.
Common improvements include:
(1) Low temperature sintering with metallized sintering reduces damage to the metallization, but the fill factor is generally lower. There is little gain in battery efficiency.
(2) Generally, a relatively deep PN junction is adopted to reduce the metallized damage, a process for attempting laser SE is adopted in the related technology, boron is attempted to be doped, and the problem is that the laser damage is heavier to cause the open voltage loss, so that the battery efficiency improvement range is limited.
In order to solve the above technical problems, as shown in fig. 1 and 2, an embodiment of the present application provides a solar cell, including:
the substrate 1 has a front surface 2 and a back surface 3, the front surface 2 and the back surface 3 are opposite to each other along a first direction D1, in the embodiment of the present application, the first direction D1 is a direction extending vertically as shown in fig. 1, it can be seen from the figure that the first direction D1 extends along a gravitational direction, when the substrate 1 is not placed horizontally, the first direction D1 forms an angle with the gravitational direction, the front surface 2 is a light receiving surface facing the sunlight irradiation direction, the back surface 3 is a surface opposite to the front surface 2, and the back surface 3 can also be used as a light receiving surface for a double-sided cell. The substrate 1 may be, for example, a semiconductor including a crystal (e.g., crystalline silicon) containing a first conductivity type dopant. The crystalline semiconductor may be single crystal silicon, and the first conductivity type dopant may be an N-type dopant such As a V group element including phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), or a P-type dopant including a III group element including boron (B), aluminum (Al), gallium (Ga), indium (In), or the like.
A first doped layer 4 of a first doping type on the front surface 2 of the substrate 1, in one possible embodiment, when the substrate 1 is an N-type crystalline silicon substrate 1, the first doping element of the first doped layer 4 is boron; when the substrate 1 is a P-type crystalline silicon substrate 1, the first doping element of the first doping layer 4 is phosphorus.
A second doped layer 5 of a second doping type on the back surface 3 of the substrate 1, the second doping type being opposite to the first doping type, the first doping element of the second doped layer 5 being compatible with the first conductivity type dopant of the substrate 1; in a possible embodiment, when the substrate 1 is an N-type crystalline silicon substrate 1, the first doping element of the second doping layer 5 is phosphorus; when the substrate 1 is a P-type crystalline silicon substrate 1, the second doping element of the second doping layer 5 is boron.
The dielectric layer 6 is located between the substrate 1 and the second doped layer 5, the dielectric layer 6 is used for performing interface passivation on the back surface 3 of the substrate 1, recombination of carriers at the interface is reduced, transmission efficiency of the carriers is guaranteed, in a feasible embodiment, the second doped layer 5 and the dielectric layer 6 are all provided with multiple layers, the multiple layers of the second doped layer 5 and the multiple layers of the dielectric layer 6 are alternately arranged in sequence along the first direction D1, the multilayer passivation on the substrate 1 is achieved through depositing the multiple layers of the second doped layer 5, the field effect passivation effect is improved, carrier recombination at the interface of the substrate 1 is reduced, minority carrier passing is blocked through the multiple layers of the dielectric layer 6, selective transmission of the carriers is achieved, carrier recombination at the interface of the substrate 1 is reduced, and further the working efficiency of the solar cell is improved.
The first electrode 7 is electrically contacted with the first doped layer 4, and the material of the first electrode 7 comprises at least one conductive metal material of silver, aluminum, copper, nickel, and the like.
And a second electrode 8 in electrical contact with the second doped layer 5, the material of the second electrode 8 comprising at least one conductive metal material of silver, aluminum, copper, nickel, etc.
Wherein the first doped layer 4 comprises a first doped region 41 having a first doping concentration and a second doped region 42 having a second doping concentration, wherein the first doped region 41 is in electrical contact with the first electrode 7, the first doping concentration being greater than the second doping concentration; thereby forming a selective emitter structure on the surface of the first doped layer 4.
In one possible embodiment, after boron expansion, laser is irradiated on the surface of the substrate 1 to melt borosilicate glass, so that a first doped region 41 heavily doped with boron ions is formed at the laser irradiated part, and a second doped region 42 lightly doped is formed at the non-irradiated part of the laser, so that surface carrier recombination caused by heavy doping is reduced.
The second doped region 42 without the metal grid line (the first electrode 7) has larger sheet resistance, lower surface doping concentration and less recombination, and can improve the open-circuit voltage and short-circuit current of the battery piece; the first doped region 41 where the metal gate line (the first electrode 7) is located has a higher doping concentration and a deeper junction depth, so that the contact resistance can be effectively reduced, and the filling factor can be improved.
A plurality of raised structures 11 are formed on one side of the front surface 2 of the substrate 1, the first doped region 41 is located inside the surfaces of the raised structures 11, the raised structures 11 can be formed through a texturing (or etching) process, and the texturing process can be performed by chemical etching, laser etching, mechanical etching, plasma etching and the like, so that the raised structures have good light trapping and anti-reflection effects, the effective contact area of light is increased, the further utilization of light energy is realized, and the power generation efficiency is improved.
In order to inhibit the influence degree of metallization, especially silver aluminum paste system, on the emitter (the first doped layer 4), a plurality of barrier layers 12 are formed on the side wall of each raised structure 11, the barrier layers 12 comprise silicon-containing materials with different crystal structures from the substrate 1, and the barrier layers 12 can enable part of aluminum elements to be shallower to enter PN junctions formed between the first doped layer 4 and the substrate 1 in the sintering process of the battery piece, inhibit the diffusion depth of part of aluminum elements, and achieve the purpose that the average penetration depth of aluminum thorns is reduced by 8-20% on the premise of not adjusting the sintering temperature, so that the recombination of metal grid lines can be further reduced, and the conversion efficiency of the battery is improved.
In the embodiment provided by the application, the substrate 1 comprises a monocrystalline silicon substrate 1, the barrier layer 12 comprises an amorphous silicon layer, referring to fig. 2, fig. 2 is an SEM view of the front surface 2 of the substrate 1 of the solar cell provided by the application, wherein the lower left corner of fig. 2 is an enlarged partial barrier layer 12, in a feasible implementation manner, a non-uniform and extremely thin amorphous silicon layer is generated on the surface (the top of the convex structure 11) of the first doped layer 4 of the monocrystalline silicon substrate 1 by laser induction, the diffusion depth of partial aluminum element is inhibited, specifically, the laser adopts a non-uniform light spot, the local area of the convex structure 11 on the first doped layer 4 is processed into a micropore hole and an amorphous state, so that the barrier layer 12 is formed, the laser light spot S is a non-uniform light spot, and the laser adopts a complex internal pattern of a single light spot formed by non-uniform reflection brought by mirror graphical processing, so that the non-uniform light spot is formed; referring to fig. 3, the pattern of the laser spot S includes, but is not limited to, a triangle, rectangle, ellipse, circle, line segment, or a linear combination of irregular shapes.
In the embodiment provided by the present application, the crystal structure of the barrier layer 12 is different from that of the second doped layer 5, the second doped layer 5 includes at least one of microcrystalline silicon, polycrystalline silicon, or single crystal silicon, and the second doped layer 5 is formed by doping microcrystalline silicon, polycrystalline silicon, or single crystal silicon, etc. with an N-type dopant. The N-type dopant may be any dopant having the same conductivity type as the substrate 1. That is, a group V element such As phosphorus (P), arsenic (As), bismuth (Bi), or antimony (Sb) may be used.
In a possible embodiment, the second doped layer 5 is a phosphorus doped polysilicon layer. The crystal structure of the second doped layer 5 is different from that of the barrier layer 12, and the barrier layer 12 is a part of microporous silicon-based amorphous silicon layer locally generated in the bump structure 11 by processing the first doped region 41 of the first doped layer 4 by using a femtosecond laser special heterogeneous light spot.
In the embodiment provided by the application, the barrier layer 12 partially covers the side wall of the raised structure 11, the laser processing area is limited to the partial surface of the first doping layer 4 and is limited to the side wall surface of the raised structure 11 far away from the substrate 1, so that the open-circuit loss caused by the serious damage of the laser spots S to the surface of the substrate 1 can be avoided, and the improvement range of the battery efficiency is limited.
In the embodiment provided in the present application, the ratio of the height of the barrier layer 12 to the height of the bump structure 11 along the first direction D1 includes 20% -35%, including the end point values, specifically, the ratio ranges of 20%, 25%, 30%, 35%, etc., but may be other values within the above ranges, which is not limited herein. Within this range, the deeper the barrier layer 12 is, the stronger the barrier function is, and the higher the conversion efficiency of the battery. When the height of the barrier layer 12 is out of this range, the light trapping effect and the antireflection effect of the bump structure 11 are reduced if the height is too large, and the diffusion suppressing effect on the aluminum element is reduced if the height of the barrier layer 12 is too small.
In the embodiment provided by the application, referring to fig. 2, the protruding structures 11 comprise pyramid-shaped texture structures, quadrangular frustum-shaped texture structures or linear texture structures, the linear texture structures are strip-shaped or linear texture structures which are distributed at intervals, a plurality of strip-shaped or linear texture structures are mutually parallel, and the structures can have good light trapping and anti-reflection effects, so that the effective contact area of light is increased, the further utilization of light energy is realized, and the power generation efficiency of the battery is improved.
The barrier layer 12 is located on the side walls of the pyramid-like texture, the quadrangular frustum-like texture, or the linear texture. Those skilled in the art will appreciate that the bump structure 11 is not limited to the above type, or may be a mixture of multiple structures, and forming the bump structure 11 with multiple shapes on the first doped layer 4 may reduce interface recombination and improve photoelectric conversion efficiency.
In the embodiment provided by the application, the thickness of the barrier layer 12 is not more than 30nm, and the excessive thickness of the barrier layer 12 can cause heavier laser damage to cause open-voltage loss, so that the improvement range of the battery efficiency is limited.
As an alternative aspect of the present application, the dielectric layer 6 comprises one or more of silicon oxide, aluminum oxide, hafnium oxide, silicon nitride or silicon oxynitride. The materials have good interface hanging passivation effect and tunneling effect.
The dielectric layer 6 allows multi-photon tunneling to enter the second doped layer 5 and simultaneously blocks minority carriers from passing through, so that the majority carriers are transported transversely in the second doped layer 5 and collected by the second electrode 8, the dielectric layer 6 and the second doped layer 5 form a tunneling oxide passivation contact structure, excellent interface passivation and selective collection of carriers can be achieved, recombination of the carriers is reduced, and photoelectric conversion efficiency of the solar cell is improved. It is noted that the dielectric layer 6 may in fact not have a perfect tunnel barrier, as it may for example contain defects such as pinholes, which may lead to other charge carrier transport mechanisms (e.g. drift, diffusion) being dominant with respect to tunneling.
In the embodiment provided by the application, referring to fig. 1, a first passivation layer 9 is formed on the surface of the first doped layer 4 on the side facing away from the substrate 1, and after the first electrode 7 penetrates through the first passivation layer 9, electrical contact is formed with the first doped layer 4, where the first passivation layer 9 includes at least one of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, and a silicon oxynitride layer.
The first passivation layer 9 can passivate the front surface 2 of the battery, reduce the carrier recombination velocity of the front surface 2, improve the photoelectric conversion efficiency, the first passivation layer 9 is positioned on the surface of the first doped layer 4, and the first electrode 7 penetrates through the first passivation layer 9 and is in electrical contact with the first doped layer 4. As an alternative solution of the present application, the first passivation layer 9 may be provided with an opening, so that the first electrode 7 is electrically contacted with the first doped layer 4 after passing through the opening, thereby reducing the contact area between the metal electrode and the first doped layer 4, further reducing the contact resistance, and improving the open circuit voltage.
Optionally, the first passivation layer 9 includes a stacked structure of at least one or more of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, and a silicon oxynitride layer. In some embodiments, the thickness of the first passivation layer 9 ranges from 10nm to 120nm, specifically, may be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm or 120nm, or the like, but may be other values within the above range, which is not limited herein.
Optionally, a second passivation layer 10 is formed on the surface of the second doped layer 5 facing away from the substrate 1, the second electrode 8 penetrating the second passivation layer 10 and making electrical contact with the second doped layer 5. The second passivation layer 10 can play a role in passivating the back surface 3 of the substrate 1, so that the recombination of carriers at the interface is reduced, the transmission efficiency of the carriers is improved, and the photoelectric conversion efficiency of the battery piece is further improved.
Optionally, the second passivation layer 10 includes a stacked structure of at least one or more of a silicon oxide layer, a silicon nitride layer, an aluminum oxide layer, and a silicon oxynitride layer.
Based on the above embodiment, referring to fig. 4, the present application further provides a photovoltaic module, including: a cell string 13, wherein the cell strings 13 are formed by connecting the solar cells, and adjacent cell strings 13 are connected by a conductive tape such as a solder tape; an encapsulation layer 14, wherein the encapsulation layer 14 is used for covering the surface of the battery string 13; a cover plate 15, wherein the cover plate 15 is used for covering the surface of the encapsulation layer 14 away from the battery strings 13.
In some embodiments, the number of battery strings 13 is at least two, and the battery strings 13 are electrically connected in parallel and/or in series.
In some embodiments, the encapsulation layer 14 includes an encapsulation layer 14 disposed on the front and back sides of the battery string 13, and the material of the encapsulation layer 14 includes, but is not limited to, EVA, POE, or PET, among others, adhesive films.
In some embodiments, cover 15 includes cover 15 disposed on the front and back sides of battery string 13, cover 15 being selected from materials having good light transmission capabilities, including but not limited to glass, plastic, and the like.
While the foregoing is directed to embodiments of the present application, other and further embodiments of the application may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (12)
1. A solar cell, characterized in that: comprising the following steps:
a substrate having a front surface and a back surface, the front surface and the back surface being disposed opposite in a first direction;
a first doped layer having a first doping type at a front surface of the substrate;
a second doped layer having a second doping type on the back surface of the substrate, the second doping type being opposite to the first doping type;
a dielectric layer between the substrate and the second doped layer;
a first electrode in electrical contact with the first doped layer;
the first doped layer comprises a first doped region with a first doping concentration and a second doped region with a second doping concentration, wherein the first doped region is in electrical contact with the first electrode, and the first doping concentration is greater than the second doping concentration;
a plurality of protruding structures are formed on one side of the front surface of the substrate, the first doped region is located inside the surfaces of the protruding structures, at least part of the side walls of the protruding structures are partially covered with a barrier layer, and the crystal structure of the barrier layer is different from that of the second doped layer.
2. The solar cell of claim 1, wherein: the substrate comprises a monocrystalline silicon substrate and the barrier layer comprises an amorphous silicon layer.
3. The solar cell of claim 1, wherein: the crystal structure of the barrier layer is different from the crystal structure of the second doped layer.
4. A solar cell according to claim 3, characterized in that: the second doped layer includes at least one of microcrystalline silicon, polycrystalline silicon, or monocrystalline silicon.
5. The solar cell of claim 1, wherein: the barrier layer comprises a silicon-containing material of a different crystal structure than the substrate.
6. The solar cell of claim 1, wherein: along the first direction, the ratio of the height of the barrier layer to the height of the raised structures comprises 20% -35%.
7. The solar cell of claim 1, wherein: the raised structures comprise pyramid-shaped texture structures, quadrangular frustum pyramid-shaped texture structures or linear texture structures.
8. The solar cell of claim 7, wherein: the barrier layer is positioned on the side wall of the pyramid-shaped texture structure, the quadrangular frustum pyramid-shaped texture structure or the linear texture structure.
9. The solar cell of claim 1, wherein: the thickness of the barrier layer is not more than 30nm.
10. The solar cell of claim 1, wherein: a first passivation layer is formed on the surface of the first doped layer, which is far away from the substrate, and the first electrode penetrates through the first passivation layer and is in electrical contact with the first doped region.
11. The solar cell of claim 1, wherein: and a second passivation layer is formed on the surface of one side of the second doped layer, which is far away from the substrate, and the second electrode penetrates through the second passivation layer and is in electrical contact with the second doped layer.
12. A photovoltaic module, comprising:
a battery string formed by connecting the solar cells according to any one of claims 1 to 11;
an encapsulation layer for covering the surface of the battery string;
and the cover plate is used for covering the surface, far away from the battery strings, of the packaging layer.
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| CN202311305291.0A CN117153925A (en) | 2022-07-27 | 2022-07-27 | Solar cell and photovoltaic module |
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| CN202210891476.3A CN115241299B (en) | 2022-07-27 | 2022-07-27 | Solar cell and photovoltaic module |
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| KR102215322B1 (en) * | 2019-03-14 | 2021-03-12 | 한국에너지기술연구원 | Silicon solar cell having high efficiency and method for fabricating the same |
| CN111162145A (en) * | 2020-02-26 | 2020-05-15 | 泰州中来光电科技有限公司 | Passivated contact solar cell with selective emitter structure and preparation method thereof |
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