CN103280468B - The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used - Google Patents
The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used Download PDFInfo
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- CN103280468B CN103280468B CN201310217988.2A CN201310217988A CN103280468B CN 103280468 B CN103280468 B CN 103280468B CN 201310217988 A CN201310217988 A CN 201310217988A CN 103280468 B CN103280468 B CN 103280468B
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Abstract
The invention belongs to technical field of solar, be specifically related to a kind of passivating back crystal-silicon solar cell back electrode structure and half tone used.The back electrode structure of this passivating back crystal-silicon solar cell, including the passivation dielectric film being placed in the solar cell silicon chip back side, the back of the body silver electrode being placed on passivation dielectric film and back of the body aluminum electrode, it is provided with void region inside described back of the body silver electrode, described back of the body aluminum electrode forms complementation with back of the body silver electrode, described back of the body silver electrode and passivation dielectric film to open diaphragm area the most overlapping or partly overlap, it is adaptable to passivating back point cantact or linear contact lay crystal-silicon solar cell.This back electrode structure is greatly improved the passivating back effect of battery, and the electric property such as open-circuit voltage and short circuit current is all effectively improved；Additionally, this back electrode structure preparation cost is low, can match with regular industrial production line easily, it is easy to accomplish large batch of industrialized production.
Description
Technical field
The invention belongs to technical field of solar, be specifically related to a kind of passivating back crystal-silicon solar cell back electrode structure and
Half tone used.
Background technology
In recent years, the crystal-silicon solar cell market demand constantly expands, and also requires that solar cell conversion efficiency increasingly
High.Passivating back local contact solar battery structure can be effectively reduced the recombination rate of crystal-silicon solar cell back surface,
Improve open-circuit voltage and short circuit current, be one of method realizing efficiently conversion solar cell.
In prior art, passivating back local contact solar cell uses deielectric-coating passivation cell back surface, by laser etc.
Method carries out local to deielectric-coating and opens film, then by method for printing screen printing back of the body silver electrode and back of the body aluminum electrode.Battery burns
After knot, will react formation p+ local back surface field with silicon substrate opening diaphragm area back of the body aluminum electrode, this local back surface field contacts
Contribute to reducing the series resistance of battery, improving battery passivation effect, reduce photo-generated carrier recombination rate.But,
In traditional passivating back local contact solar battery structure, back silver electrode will also tend to covering part deielectric-coating place
Open diaphragm area, so, local back surface field can not be formed in that region, so that whole battery open circuit electricity can be affected
The electric properties such as pressure and short circuit current.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that the back electrode of a kind of passivating back crystal-silicon solar cell
Structure and half tone used, this back electrode structure is greatly improved the passivating back effect of battery, open-circuit voltage and short circuit current
All it is effectively improved Deng electric property；Additionally, this back electrode structure preparation cost is low, can be raw with regular industrial easily
Product line matches, it is easy to accomplish large batch of industrialized production.
In order to realize above-mentioned technical purpose, the present invention is realized by techniques below scheme:
The back electrode structure of a kind of passivating back crystal-silicon solar cell of the present invention, silica-based including being placed in solar cell
The passivation dielectric film at the sheet back side, the back of the body silver electrode being placed on passivation dielectric film and back of the body aluminum electrode, set inside described back of the body silver electrode
Void region, described back of the body aluminum electrode is had to form the Kai Mo district of complementation, described back of the body silver electrode and passivation dielectric film with back of the body silver electrode
Territory is the most overlapping, it is adaptable to passivating back point cantact or linear contact lay crystal-silicon solar cell.Described back of the body silver electrode and dielectric passivation
Film to open diaphragm area the most overlapping, it is adaptable to passivating back point cantact or linear contact lay crystal-silicon solar cell.
As the further improvement of above-mentioned technology, described back of the body silver electrode has one or more repeated arrangement void region, its
Generally circular in shape or the polygon of void region or the combination of above-mentioned shape.
Specifically, the quantity of described back of the body silver electrode is 2 to 5, and the width range of described back of the body silver electrode is 1 to 5 milli
Rice, length range is 120 to 156 millimeters.
In the present invention, the relation opened between diaphragm area of described back of the body silver electrode and passivating film has following three kinds of versions:
The first, the diaphragm area of opening of described passivation dielectric film is corresponding to carrying on the back the linear Kai Mo district bottom silver electrode void region
Territory, described back of the body silver electrode is vertical with the pattern direction linearly opening diaphragm area of described passivation dielectric film, now, described back of the body silver
Electrode pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, a length of 0.5 to 5
Millimeter.
The second, the diaphragm area of opening of described passivation dielectric film is corresponding to carrying on the back the linear Kai Mo district bottom silver electrode void region
Territory, described back of the body silver electrode and described passivation dielectric film linearly to open diaphragm area pattern direction parallel, now, described back of the body silver electricity
Pole pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, a length of 120 to 156
Millimeter.
The third, described passivation dielectric film open diaphragm area be corresponding to the back of the body silver electrode void region bottom point cantact open film
Region, described back of the body silver electrode pierced pattern is circular, polygon or the combination of above-mentioned shape.
In the present invention, described back of the body silver electrode in the coverage rate opening diaphragm area corresponding to passivation dielectric film for be less than more than 0
Equal to 30%.
The invention also discloses the half tone used of the back electrode of above-mentioned passivating back crystal-silicon solar cell, specifically include back of the body aluminum
Electrode half tone and back of the body silver electrode half tone, its structure all includes half tone body, described half tone body is provided with for pie graph
Shape is formed the pattern of described back of the body silver electrode and the mesh making slurry pass through of back of the body aluminum electrode.
Compared with prior art, the invention has the beneficial effects as follows:
(1) due to the fact that back of the body silver electrode is internally provided with void region so that open diaphragm area energy at passivation dielectric film
When forming local back surface field, the passivating back effect being effectively improved battery improves, same time open-circuit voltage and short circuit electricity
The electric properties such as stream are all improved；
(2) the back electrode structure preparation cost of passivating back crystal-silicon solar cell of the present invention is cheap, it is easy to often
Rule industrial production line matches, it is easy to accomplish large batch of industrialized production.
Accompanying drawing explanation
With specific embodiment, the present invention is described in detail below in conjunction with the accompanying drawings:
Fig. 1 is passivating back crystal-silicon solar cell structural representation (comprising back electrode structure) of the present invention；
Fig. 2 is the back of the body silver electrode screen structure schematic diagram described in the embodiment of the present invention one；
Fig. 3 is the back of the body aluminum electrode network plate structure schematic diagram described in the embodiment of the present invention one；
Fig. 4 is the back of the body silver electrode screen structure schematic diagram described in the embodiment of the present invention two；
Fig. 5 is the back of the body aluminum electrode network plate structure schematic diagram described in the embodiment of the present invention one；
Fig. 6 is the back of the body silver electrode screen structure schematic diagram described in the embodiment of the present invention three；
Fig. 7 is the back of the body aluminum electrode network plate structure schematic diagram described in the embodiment of the present invention three.
Detailed description of the invention
As it is shown in figure 1, passivating back crystal-silicon solar cell includes silicon chip 20, is placed in the front table of silicon chip 20 front surface
Face antireflective coating 30 and front electrode 40 and back electrode structure 10.
The back electrode structure 10 of passivating back crystal-silicon solar cell of the present invention is illustrated below in conjunction with Fig. 1.
As it is shown in figure 1, the back electrode structure 10 of described passivating back crystal-silicon solar cell, including being placed in solar cell silicon
The passivation dielectric film 11 at substrate 20 back side, the back of the body silver electrode 12 being placed on passivation dielectric film 11 and back of the body aluminum electrode 13, institute
Stating the internal void region that is provided with of back of the body silver electrode 12, described back of the body aluminum electrode 13 forms complementation with back of the body silver electrode 12, i.e. back of the body aluminum electricity
Pole 13 covers the region without back of the body silver electrode 12, including the void region of back of the body silver electrode 12, so, back of the body aluminum electrode 13 with
The gross area forming p+ local back surface field 14 will be maximized by silicon chip 20 contact area, advantageously reduce cell backside
Compound, improve open-circuit voltage, finally promote battery efficiency.
Additionally, described back of the body silver electrode 12 and passivation dielectric film 11 to open diaphragm area the most overlapping, it is adaptable to passivating back point connects
Touch or linear contact lay crystal-silicon solar cell.In the present invention, described back of the body silver electrode 12 is corresponding to passivation dielectric film 11
Open the coverage rate of diaphragm area for being less than or equal to 30% more than 0.
In the present invention, described back of the body silver electrode 12 has one or more repeated arrangement void region, the shape of its void region
Shape is circular or polygon or the combination etc. of above-mentioned shape, and the quantity of described back of the body silver electrode 12 is 2 to 5, described back of the body silver
The width range of electrode 12 is 1 to 5 millimeter, and length range is 120 to 156 millimeters.
In the present invention, the relation opened between diaphragm area of described back of the body silver electrode and passivating film has following three kinds of versions,
Structure especially by each back electrode half tone illustrates:
Embodiment one:
As shown in Figure 1 to Figure 3, the diaphragm area of opening of described passivation dielectric film 11 is corresponding to back of the body silver electrode 12 void region
Bottom linearly open diaphragm area, the pattern side linearly opening diaphragm area of described back of the body silver electrode 12 and described passivation dielectric film 11
To being mutually perpendicular to, now, described back of the body silver electrode 12 pierced pattern is rectangle, and described pierced pattern width range is 0.1
Millimeter to 1 millimeter, a length of 0.5 to 5 millimeter.
The half tone 50 of described back of the body silver electrode 12 includes half tone body 51, and the pattern 52 corresponding to back of the body silver electrode 12 (includes
Void region).
The half tone 60 of described back of the body silver electrode 12 includes half tone body 61, and the pattern 62 corresponding to back of the body aluminum electrode 13 (includes
Void region).
From Fig. 2, Fig. 3, the pattern 52 of the back of the body silver electrode 12 on above-mentioned two half tone bodies 51,61 and back of the body aluminum electrode
Pattern 62 complete complementary of 13.
Embodiment two:
This embodiment is essentially identical with embodiment one, and its difference is: as shown in Figure 1, Figure 4, Figure 5, the described back of the body
Silver electrode 12 and described passivation dielectric film 11 linearly to open diaphragm area pattern direction parallel, now, described back of the body silver electrode 12
Pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, a length of 120 to 156 millis
Rice.
The half tone 50a of described back of the body silver electrode 12 includes half tone body 51a, corresponding to the pattern 52a (bag of back of the body silver electrode 12
Containing void region).
The half tone 60a of described back of the body silver electrode 12 includes half tone body 61a, corresponding to the pattern 62a (bag of back of the body aluminum electrode 13
Containing void region).
From Fig. 4, Fig. 5, the pattern 52a of the back of the body silver electrode 12 on above-mentioned two half tone body 51a, 61a and back of the body aluminum electricity
The pattern 62a complete complementary of pole 13.
Embodiment three:
This embodiment is essentially identical with embodiment one, and its difference is: as shown in Figure 1, Figure 6, Figure 7, described blunt
Change medium, 11 open diaphragm area be corresponding to the back of the body silver electrode void region bottom point cantact open diaphragm area, described back of the body silver electrode
12 pierced patterns are circular, polygon or the combination of above-mentioned shape.
The half tone 50b of described back of the body silver electrode 12 includes half tone body 51b, corresponding to the dot pattern 52b of back of the body silver electrode 12
(including void region).
The half tone 60b of described back of the body silver electrode 12 includes half tone body 61b, corresponding to the pattern 62b (bag of back of the body aluminum electrode 13
Containing void region).
From Fig. 6, Fig. 7, the corresponding pattern 52b of the back of the body silver electrode 12 on above-mentioned two half tone body 51b, 61b
Pattern 62b complete complementary with back of the body aluminum electrode 13.
The invention is not limited in above-mentioned embodiment, if various changes or modification to the present invention are without departing from the present invention's
Spirit and scope, if these are changed and within the scope of modification belongs to claim and the equivalent technologies of the present invention, then this
Bright also comprise these change and modification.
Claims (9)
1. the back electrode structure of a passivating back crystal-silicon solar cell, it is characterised in that: include being placed in solar cell silicon
The passivation dielectric film of substrate back, the back of the body silver electrode being placed on passivation dielectric film and back of the body aluminum electrode, inside described back of the body silver electrode
Being provided with void region, described back of the body aluminum electrode and back of the body silver electrode form complementation, and described back of the body silver electrode opens film with passivation dielectric film
Region is the most overlapping, it is adaptable to passivating back point cantact or linear contact lay crystal-silicon solar cell.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 1, it is characterised in that: institute
State back of the body silver electrode and there is one or more repeated arrangement void region, the generally circular in shape or polygon of its void region or on
State the combination of shape.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 1 and 2, it is characterised in that:
The quantity of described back of the body silver electrode is 2 to 5, and the width range of described back of the body silver electrode is 1 to 5 millimeter, and length range is
120 to 156 millimeters.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 3, it is characterised in that: institute
State passivation dielectric film open diaphragm area be corresponding to back of the body silver electrode void region bottom linearly open diaphragm area, described back of the body silver electricity
Pole is vertical with the pattern direction linearly opening diaphragm area of described passivation dielectric film.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 4, it is characterised in that: institute
Stating back of the body silver electrode pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, a length of 0.5
To 5 millimeters.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 3, it is characterised in that: institute
State passivation dielectric film open diaphragm area be corresponding to back of the body silver electrode void region bottom linearly open diaphragm area, described back of the body silver electricity
Pole and described passivation dielectric film linearly to open diaphragm area pattern direction parallel.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 6, it is characterised in that: institute
Stating back of the body silver electrode pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, a length of 120
To 156 millimeters.
The back electrode structure of passivating back crystal-silicon solar cell the most according to claim 1, it is characterised in that: institute
State passivation dielectric film open diaphragm area be corresponding to back of the body silver electrode void region bottom point cantact open diaphragm area, described back of the body silver
Electrode pierced pattern is circular, polygon or the combination of above-mentioned shape.
The half tone used of the back electrode structure of passivating back crystal-silicon solar cell the most according to claim 1, it is special
Levy and be: include half tone body, described half tone body is provided with and is formed described back of the body silver electrode and the back of the body for constituting figure
The pattern making mesh that slurry passes through of aluminum electrode.
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| CN201310217988.2A CN103280468B (en) | 2013-06-04 | 2013-06-04 | The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used |
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| CN201310217988.2A CN103280468B (en) | 2013-06-04 | 2013-06-04 | The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used |
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Cited By (2)
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| CN106952970A (en) * | 2017-03-24 | 2017-07-14 | 苏州腾晖光伏技术有限公司 | A kind of PERC batteries and preparation method thereof |
| CN108172635A (en) * | 2016-12-07 | 2018-06-15 | 广西大学 | A kind of novel silicon wafer solar cell |
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| CN104576836B (en) * | 2015-01-23 | 2017-02-22 | 浙江晶科能源有限公司 | Method for manufacturing back-passivated solar cells |
| TWI560892B (en) * | 2015-08-12 | 2016-12-01 | Motech Ind Inc | Solar cell |
| CN108630767B (en) * | 2018-05-28 | 2020-07-31 | 江苏日托光伏科技股份有限公司 | Method for reducing hidden crack of electrode area on back side of MWT battery |
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| DE102008030819A1 (en) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Optoelectronic device |
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| CN106952970A (en) * | 2017-03-24 | 2017-07-14 | 苏州腾晖光伏技术有限公司 | A kind of PERC batteries and preparation method thereof |
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