CN108630767B - Method for reducing hidden crack of electrode area on back side of MWT battery - Google Patents
Method for reducing hidden crack of electrode area on back side of MWT battery Download PDFInfo
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- CN108630767B CN108630767B CN201810522763.0A CN201810522763A CN108630767B CN 108630767 B CN108630767 B CN 108630767B CN 201810522763 A CN201810522763 A CN 201810522763A CN 108630767 B CN108630767 B CN 108630767B
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000007639 printing Methods 0.000 claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 238000005336 cracking Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005553 drilling Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a method for reducing hidden crack of an MWT battery back electrode area, which is characterized in that in the preparation process of a positive electrode area of an MWT battery back electrode, the positive electrode area is hollowed out and antenna design is adopted; the hollow design is a plurality of non-printing areas arranged in the middle area of the positive electrode point printing area, and the antenna is a plurality of printing areas arranged in the edge area of the positive electrode point printing area; in the preparation process of the aluminum back field, a hollow design is adopted for the overlapped area of the aluminum back field and the positive electrode area; the aluminum back surface field hollow design is a plurality of non-printing areas arranged in the overlapping area of the aluminum back surface field and the positive electrode area. The hollowed-out design of the positive electrode area can effectively reduce the overall height of the positive electrode area under the condition of ensuring that the welding area of the assembly is unchanged, and the antenna design can effectively reduce the coverage area of the overlapping area under the condition of effectively ensuring the current transmission of the positive electrode area and the aluminum back surface field. The hollowed-out design of the aluminum back field overlapping area can reduce the height of the overlapping area under the condition of ensuring that the area of the aluminum back field and the area of the positive electrode area are unchanged.
Description
Technical Field
The invention relates to a method for reducing hidden cracking of an electrode area at the back of an MWT (Metal wrap through) cell, belonging to the technical field of MWT solar cell module processing.
Background
Currently, the crystalline silicon solar technology includes a heterojunction solar cell (HIT), a back electrode contact silicon solar cell (IBC), an emitter surrounding punch-through silicon solar cell (EWT), a laser grooving buried gate cell, an oblique evaporation metal contact silicon solar cell (OECO), a metal through-hole winding silicon solar cell (MWT), etc., wherein the MWT cell receives more and more attention due to its high efficiency, small shading area and better appearance characteristics.
The MWT crystalline silicon solar cell transfers the energy collected by the light receiving surface to the electrode of the back light surface of the cell through laser drilling, so that the light shading area of the light receiving surface is reduced, and the aim of improving the conversion efficiency is fulfilled.
In the preparation of MWT solar cells, the method and flow of the conventional cell are adopted to prepare the back electrode, the aluminum back field and the front electrode, as in application No. CN201410016190.6 and patent No. CN 201410844698.5. Firstly, preparing positive and negative electrodes of a backlight surface of the MWT battery (as shown in figure 1, respectively marked with numbers 3 and 2), then preparing an aluminum back field by printing on the backlight surface (as shown in figure 2), and finally preparing a front electrode on the light receiving surface. When the aluminum back field is prepared, positive pole non-printing areas (such as a reference numeral 3 in fig. 2) and negative pole non-printing areas (such as a reference numeral 2 in fig. 2) with different sizes are respectively arranged at corresponding positions of a positive pole and a negative pole of the MWT battery, so that the overlapping of the aluminum back field and the positive pole and the isolation effect of the aluminum back field and the negative pole area are respectively realized.
Due to the need of back current collection, the aluminum back field and the positive electrode point need to be overlapped to ensure the transmission of current, and the height of the overlapped area is higher than that of the positive electrode point and the aluminum back field, so that the unreasonable design easily causes the increase of the fragment rate of the subsequent process, the packaging and the transportation of the battery and the assembly end.
For conventional battery technology, patent application No. 2017114454605 provides a back electrode design in which the back positive electrode and aluminum back field do not overlap in the welding direction to reduce the scrap rate during assembly welding.
Therefore, for the MWT battery, the overlapping region needs to be optimally designed, current transmission is ensured, and meanwhile the problem of the fragment rate caused by hidden cracking of the region is reduced.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems and the defects in the prior art, the invention provides a method for reducing the hidden crack of the electrode area of the back side of an MWT battery.
The technical scheme is as follows: a method for reducing hidden crack of an electrode area at the back side of an MWT battery comprises the following steps:
(1) preparing an MWT back electrode and an aluminum back field by adopting a traditional printing mode;
(2) the preparation method of the positive electrode area of the MWT battery back electrode comprises the following steps: the positive electrode area is designed by hollowing out and antenna; the hollow design is a plurality of non-printing areas arranged in the anode point printing area, and the antenna is a plurality of printing areas arranged in the edge area of the anode point printing area;
(3) the preparation method of the MWT battery aluminum back surface field comprises the following steps: a hollow design is adopted for the overlapped area of the aluminum back field and the positive electrode area; the aluminum back surface field hollow design is a plurality of non-printing areas arranged in the overlapping area of the aluminum back surface field and the positive electrode area.
The hollow shape adopted by the positive electrode area can be a circle, a rectangle or a polygon of any other shape; the hollow arrangement can adopt uniform and symmetrical arrangement, and the arrangement and the antenna arrangement of the positive electrode area form a certain included angle and cannot be overlapped; the diameter of the round hollow-out area can be different from 0.01 mm to 1 mm.
The antenna adopted by the positive electrode area is a printing area which is arranged on the positive electrode point and has the same size and shape and is divergently arranged outwards. The shape required by the antenna can be rectangular; the arrangement can adopt uniform and symmetrical arrangement; the length and width of the antenna can be different between 0.01 mm and 1 mm.
The hollowed-out design of the positive electrode area can effectively reduce the overall height of the positive electrode area under the condition of ensuring that the welding area of the assembly is unchanged, and the antenna design can effectively reduce the coverage area of the overlapping area under the condition of effectively ensuring the current transmission of the positive electrode area and the aluminum back surface field.
The hollow shape adopted by the aluminum back surface field is rectangular; the hollow arrangement can adopt uniform and symmetrical arrangement, and the arrangement and the antenna arrangement of the positive electrode area form a certain included angle and cannot be overlapped; the diameter of the hollow-out area can be different from 0.01 mm to 1 mm.
The hollowed-out design of the aluminum back field overlapping area can reduce the height of the overlapping area under the condition of ensuring that the area of the aluminum back field and the area of the positive electrode area are unchanged.
Has the advantages that: compared with the prior art, the method for reducing the hidden crack of the electrode area at the back side of the MWT battery has the following advantages:
the positive electrode area of the back electrode of the MWT battery is designed to be hollow and the antenna, the overlapped area of the aluminum back field and the positive electrode area is designed to be hollow, the covering area of the overlapped area and the height of the overlapped area can be reduced under the condition of ensuring effective current transmission, and therefore hidden cracking of the electrode area is reduced and the fragment rate caused by the electrode area is effectively reduced under the condition that the conversion efficiency and the reliability of the MWT battery are not influenced.
Drawings
FIG. 1 is a diagram of a conventional MWT back electrode fabrication scheme;
FIG. 2 is a scheme for conventional MWT aluminum back surface field preparation;
FIG. 3 is a MWT positive electrode area hollow and antenna design diagram;
in the figure, 1 is an MWT back electrode, 2 is a negative electrode region, 3 is a positive electrode region, 31 is an antenna, 32 is a hollowed positive electrode region, 4 is an aluminum back field region, 5 is a negative electrode point non-printing region corresponding to an aluminum back field, 6 is a non-printing region corresponding to a positive electrode point of the aluminum back field, 7 is an aluminum back field non-printing region, and 8 is an aluminum back field hollowed.
Detailed Description
The invention is further elucidated with reference to the drawings and the embodiments.
Example 1
The method for reducing the hidden crack of the electrode area at the back side of the MWT battery comprises the following steps:
(1) silicon chip: a solar-grade P-type monocrystalline or polycrystalline silicon wafer is used as a substrate;
(2) laser drilling, namely performing laser drilling on the silicon wafer, wherein holes are an array of N × N, and the shape of the holes is a circle center, a square shape or a cone shape, and the like, and the hole diameter of the laser drilling is preferably selected to be 100-400 mu m;
(3) texturing: texturing by using a conventional chemical cleaning and texturing method to form a light trap surface;
(4) diffusion: performing high-temperature single-sided diffusion on the suede by using a POCl3 diffusion source to form a PN junction;
(5) masking: on the back surface of the silicon wafer (taking the holes as the center), a circular organic mask (such as paraffin film) with the diameter of 1-10mm (such as the diameter of 1, 2, 4, 8, 10mm) and the thickness of 1-50 μm (such as the thickness of 25 μm) is prepared by screen printing or ink-jet printing.
(6) Etching: and etching by using a chemical solution, removing redundant PN junctions on the periphery and the back of the silicon wafer, cleaning the organic mask, and removing the phosphorosilicate glass on the surface of the diffused silicon substrate.
(7) Film coating: preparing a silicon nitride anti-reflection film by using PECVD equipment, wherein the anti-reflection film covers a positive electrode and a diffusion surface;
(8) preparing a back electrode: MWT is adopted to fill the hole, and a 250-mesh screen plate with the line diameter of 30 mu m, the yarn thickness of 60 mu m and the film thickness of 20 mu m is adopted. As shown in fig. 3, the positive electrode region 3 is a circular region with a diameter of 2.5mm, the positive electrode point is a circle with a diameter of 2.1mm, and the positive electrode region 3 is designed by hollowing out and antenna: set up in the positive pole (the diameter is 2.1 mm's circle) a plurality of diameters and be 0.05mm, the interval is 0.3mm and be the circular positive plate district fretwork 32 of evenly arranging, positive plate district fretwork 32 is the non-printing and sees through the district, in the outside 2.1-2.5 mm's of positive plate district region, the design width is 0.1mm, length is 0.4mm, the quantity is 16 and is the penetrating area of evenly arranging as antenna 31, local fretwork of printing preparation and the MWT positive pole of taking antenna 31.
(9) Preparing an aluminum back surface field: the conventional aluminum paste is adopted, and a screen plate with 325 meshes, 30 mu m of thread diameter, 50 mu m of yarn thickness and 15 of film thickness is adopted. As shown in fig. 4, the positive electrode non-printing area is designed to be a circle with a diameter of 1.8mm (the non-printing area 6 of the aluminum back field corresponding to the positive pole), an area (the aluminum back field non-printing area 7, namely the area where the aluminum back field overlaps the positive electrode area) with a diameter of 1.8-2.5mm outside the positive electrode non-printing area is designed to be a non-transmission area of the aluminum back field with a width of 0.1mm, a length of 0.7mm and a number of 16 uniformly arranged non-transmission areas as aluminum back field hollows 8, the uniformly arranged aluminum back field hollows 8 and the positive electrode area antenna 31 are arranged to form an included angle of 10 degrees, and the MWT aluminum back field partially hollowed in the overlapping area of the aluminum back field and the positive electrode area is prepared by printing.
(10) Preparing a positive electrode: the positive electrode is prepared on the diffusion surface (i.e. the front surface of the silicon wafer) of the silicon wafer by adopting a conventional front silver paste, such as Heley 9641, Dupont PV20, Duke 92A and the like, through a screen printing mode.
(11) And (3) sintering: drying and sintering in a chain furnace (the sintering temperature is 750-820 ℃), and forming ohmic contact of the front electrode and forming a back electric field.
The above steps (1) to (7) and (10) to (11) are steps for preparing a conventional MWT cell in the prior art.
Claims (5)
1. A method for reducing hidden crack of an electrode area at the back side of an MWT battery is characterized by comprising the following steps:
(1) preparing an MWT back electrode and an aluminum back field by adopting a printing mode;
(2) the preparation method of the positive electrode area of the MWT battery back electrode comprises the following steps: the positive electrode area is designed by hollowing out and antenna; the hollow design is a plurality of non-printing areas arranged in the anode point printing area, and the antenna is a plurality of printing areas arranged in the edge area of the anode point printing area; the antenna is a printing area which is arranged on the positive pole point, has the same size and shape and is divergently and outwards arranged; the shape of the antenna is rectangular; the antennae are uniformly and symmetrically arranged;
(3) the preparation method of the MWT battery aluminum back surface field comprises the following steps: a hollow design is adopted for the overlapped area of the aluminum back field and the positive electrode area; the aluminum back surface field hollow design is a plurality of non-printing areas arranged in the overlapping area of the aluminum back surface field and the positive electrode area; the hollow shape adopted by the aluminum back surface field is rectangular; the aluminum back surface field is designed to be hollowed out, and the aluminum back surface field is uniformly and symmetrically arranged, and the arrangement angle of the aluminum back surface field and the arrangement angle of the antenna in the positive electrode area cannot be overlapped.
2. The method for reducing the hidden crack of the electrode area of the MWT battery as claimed in claim 1, wherein the hollowed-out shape adopted by the positive electrode area is a circle, a rectangle or a polygon of any other shape; when the hollow-out shape adopted by the positive electrode area is circular, the diameter is 0.01-1 mm.
3. The method of reducing hidden cracking at the back electrode area of an MWT cell of claim 1 wherein the antenna has a length and width of 0.01 to 1 mm.
4. The method for reducing the hidden crack of the electrode area at the back side of the MWT battery as claimed in claim 1, wherein the positive electrode area is a circular area with the diameter of 2.5mm, wherein a plurality of circular positive electrode area hollows with the diameter of 0.05mm and the interval of 0.3mm are arranged in a circle with the diameter of 2.1mm and are uniformly arranged, the positive electrode area hollows are non-printing transmission areas, and an annular area with the diameter of 2.1-2.5mm of the positive electrode area is provided with transmission areas with the width of 0.1mm, the length of 0.4mm, the number of transmission areas is 16 and are uniformly arranged as tentacles.
5. The method for reducing the hidden crack of the electrode area at the back side of the MWT battery as claimed in claim 4, wherein in the preparation process of the aluminum back field, the non-printing area of the positive electrode is designed into a circle with the diameter of 1.8mm, the area with the diameter of 1.8-2.5mm outside the non-printing area of the positive electrode is provided with 16 uniformly arranged non-transmission areas with the width of 0.1mm and the length of 0.7mm as aluminum back field hollows, and the uniformly arranged aluminum back field hollows form an included angle of 10 degrees with the arrangement of the contact angles of the positive electrode area.
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| CN207068875U (en) * | 2017-08-04 | 2018-03-02 | 深圳市拉普拉斯能源技术有限公司 | A kind of back electrode structure of more main grid solar cells |
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| CN102544235A (en) * | 2012-02-24 | 2012-07-04 | 上饶光电高科技有限公司 | Preparation method for MWT solar battery electrode |
| CN103280468B (en) * | 2013-06-04 | 2016-08-24 | 中山大学 | The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used |
| CN203423195U (en) * | 2013-08-07 | 2014-02-05 | 江苏东鋆光伏科技有限公司 | Sectional type tentacle back electrode |
| CN103730521A (en) * | 2013-12-27 | 2014-04-16 | 晶澳（扬州）太阳能科技有限公司 | MWT solar cell, MWT solar cell component and manufacturing method of MWT solar cell component |
| CN107046078A (en) * | 2017-02-22 | 2017-08-15 | 广东爱康太阳能科技有限公司 | It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof |
| CN207338394U (en) * | 2017-08-03 | 2018-05-08 | 连云港神舟新能源有限公司 | A kind of new more main grid cell piece back electrode structures |
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