CN105529373A - Front surface electrode of crystalline silicon solar cell - Google Patents
Front surface electrode of crystalline silicon solar cell Download PDFInfo
- Publication number
- CN105529373A CN105529373A CN201610058600.2A CN201610058600A CN105529373A CN 105529373 A CN105529373 A CN 105529373A CN 201610058600 A CN201610058600 A CN 201610058600A CN 105529373 A CN105529373 A CN 105529373A
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- Prior art keywords
- grid line
- thin grid
- solder contacts
- front electrode
- silicon solar
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 3
- 229910000679 solder Inorganic materials 0.000 claims description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 238000007639 printing Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 25
- 230000008569 process Effects 0.000 description 7
- 235000008216 herbs Nutrition 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a front surface electrode of a crystalline silicon solar cell. The front surface electrode comprises multiple secondary grid lines arranged mutually at intervals in a first direction; the front surface electrode also comprises M thin grid lines arranged mutually at intervals in a second direction, wherein the thin grid lines are electrically connected with the secondary grid lines; the thin grid lines are 0.10-0.25mm in thickness, wherein M is equal to 10-20; N welding contacts at intervals are formed in each thin grid line; the welding contacts are laminated on the thin grid lines and electrically connected with the thin grid lines; the welding contacts adopt more than two kinds of square, circular or oval shapes; the ranges of the side lengths of the square welding contacts, the diameters of the circular welding contacts and the lengths of the short edges of the oval welding contacts are 0.2-1mm separately; and the side lengths of the square welding contacts, the diameters of the circular welding contacts and the lengths of the short edges of the oval welding contacts are greater than the width of the thin grid lines separately, wherein N is equal to 5-15. The front surface electrode structure can reduce the light shading area and can ensure smooth current export.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of front electrode of crystal silicon solar batteries.
Background technology
Crystal silicon solar batteries is a kind of electronic devices and components that solar energy can be transformed into electric energy.The preparation of crystalline silicon class solar cell is generally through operations such as making herbs into wool, diffusion, plated film, silk screen printing, sintering.Making herbs into wool is divided into monocrystalline, polycrystalline making herbs into wool, single crystal battery uses the method for alkali making herbs into wool to form pyramid matte at silicon chip surface, polycrystalline battery uses the method for acid etch to form pit matte at silicon chip surface, and the matte of silicon face can increase the absorption of sunlight at battery surface, reaches light trapping effect; Diffusing procedure forms P-N junction by the mode of thermal diffusion to silicon chip inside, and like this when there being illumination to penetrate, silicon chip is inner just can coating-forming voltage, is the basis that solar cell generates electricity; Coating process is to reduce the compound of minority carrier at battery surface, can improving the conversion efficiency of crystal silicon solar cell sheet; Silkscreen process is exactly the electrode making solar cell, just electric current can be derived like this when illumination is penetrated.Silk screen printing is most widely used a kind of technique in the preparation of present crystal silicon battery, process sequence is for first to carry out backplate printing and oven dry, then printing and the oven dry of aluminium back surface field is carried out, finally carry out printing, the oven dry of front electrode, sintering, allowing the silver slurry preparing electrode use be formed with battery and contact.
In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line, and main gate line and secondary grid line are electrical connected.When there being illumination, cell piece will generation current, and electric current flows to the secondary grid line of surface electrode through internal emitter, and collecting then to be flowed in battery main gate line via secondary grid line derives.Can produce loss in the process that electric current is collected at secondary grid line, this we are called it is the power loss of resistance.Battery main gate line and secondary grid line are in the sensitive surface of battery, and will inevitably block a part of light like this and be radiated at battery surface, thus decrease the effective area of shining light of battery, this part loses us and is referred to as optical loss.No matter be P type or N-type cell, as long as battery front side exists electrode structure, just need to consider continuing to optimize of electrode structure, not only reduce shading-area but also ensure the object that electric current is derived smoothly to reach.
In existing electrode structure at right side, the quantity of main gate line is generally 3, and its width is about 1.5mm; The quantity of secondary grid line is generally 80 ~ 100, and its width is about 40 μm.The wider width of main gate line, the welding of front electrode and battery can be welded well, but shading-area is also larger.In recent years, in order to reduce the shading-area of front electrode, propose in the industry a kind of electrode structure at right side without main grid, mainly the main gate line of 3 in electrode structure at right side is removed, only retain secondary grid line, after battery completes, superfine cylindrical welding is used directly to weld with secondary grid line, by the direct derived current of welding.In the welding process of superfine welding and secondary grid line, the abnormal conditions causing rosin joint maybe cannot weld because less, the secondary grid line of the width of secondary grid line is too low etc., make the power reduction of photovoltaic module.
Summary of the invention
In view of the deficiency that prior art exists, the invention provides a kind of front electrode of crystal silicon solar batteries, this electrode structure at right side can reach and not only reduce shading-area but also ensure the object that electric current is derived smoothly.
To achieve these goals, present invention employs following technical scheme:
A kind of front electrode of crystal silicon solar batteries, comprise many secondary grid lines along the spaced arrangement of first direction, wherein, described front electrode also comprises the thin grid line of M bar along the spaced arrangement of second direction, described thin grid line and described secondary grid line are electrically connected, and the width of described thin grid line is 0.10 ~ 0.25mm; Wherein, M=10 ~ 20; Wherein, each thin grid line is also provided with spaced N number of solder contacts, described solder contacts lamination to be arranged on described thin grid line and to be electrically connected with described thin grid line, it is two or more that the shape of described solder contacts is set in square, circular and ellipse, the length range of the minor face of the described square length of side, circular diameter or ellipse is 0.2 ~ 1mm respectively, and the length of the minor face of the described square length of side, circular diameter or ellipse is greater than the width of described thin grid line respectively; Wherein, N=5 ~ 15.
Preferably, described solder contacts is formed on described thin grid line by secondary printing technique.
Preferably, described many secondary grid lines equidistantly arrange along first direction, and the thin grid line of described M bar equidistantly arranges along second direction, and described second direction is mutually vertical with described first direction.
Preferably, the quantity of described secondary grid line is 80 ~ 100.
Preferably, described solder contacts is arranged at the described thin grid line position crossing with described secondary grid line.
Preferably, the N number of solder contacts on each thin grid line equidistantly arranges along on the length direction of described thin grid line.
Preferably, all solder contacts in described front electrode be N capable × M row array distribution.
Preferably, on each thin grid line, difform solder contacts alternate intervals is arranged.
Preferably, the width of described thin grid line is 0.2mm; The shape of described solder contacts comprises square and circle, and the described foursquare length of side is 0.8mm, and the diameter of described circle is 0.8mm; Wherein, M=15, N=10.
Preferably, the shape being positioned at the solder contacts on a thin grid line is identical, and the shape of solder contacts on adjacent two thin grid lines is different.
Compared to prior art, in the front electrode of the crystal silicon solar batteries that the embodiment of the present invention provides, the thin grid line that the more width of usage quantity are less replaces main gate line of the prior art, shading-area is less generally, reduce light loss, and the thin grid line of greater number is evenly distributed on solar battery front side, the electric current that secondary grid line is collected can more successfully be derived, and reduces power loss; In addition, thin grid line superimposed layer is provided with larger square, the circular or oval solder contacts of area, adds the contact area of pad and the height of pad, when welding welding, the less problem of welding and welding of battery film exception.
Accompanying drawing explanation
Fig. 1 is the structural representation of the front electrode of solar battery that the embodiment of the present invention provides;
Fig. 2 is the enlarged diagram of part A in Fig. 1;
Fig. 3 is the graphical representation of exemplary of solder contacts oval in the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.The example of these preferred implementations illustrates in the accompanying drawings.Shown in accompanying drawing and the embodiments of the present invention described with reference to the accompanying drawings be only exemplary, and the present invention is not limited to these execution modes.
At this, also it should be noted that, in order to avoid the present invention fuzzy because of unnecessary details, illustrate only in the accompanying drawings with according to the closely-related structure of the solution of the present invention and/or treatment step, and eliminate other details little with relation of the present invention.
Consult Fig. 1 and Fig. 2, present embodiments provide a kind of front electrode of crystal silicon solar batteries, as shown in Figure 1, this front electrode comprises along first direction (Y-direction as in Fig. 1) many secondary grid lines 10 spaced and arranged in parallel, along many thin grid lines 20 that second direction (X-direction as in Fig. 1) is spaced and arranged in parallel, described many secondary grid lines 10 are electrically connected mutually with described many thin grid lines 20.Wherein, secondary grid line 10 is mainly used in the photogenerated current collecting solar cell generation, and thin grid line 20 collects output for the electric current collected by secondary grid line 10.Further, each thin grid line 20 is also provided with spaced multiple solder contacts 30, described solder contacts 30 lamination to be arranged on described thin grid line 20 and to be electrically connected with described thin grid line 20, and the shape of described solder contacts 30 comprises circular and square.Described solder contacts 30 is mainly used for being welded to connect with welding after battery completes.Specific in the present embodiment, on each thin grid line 20, circular and square solder contacts 30 alternate intervals is arranged.Certainly, in some other embodiments, difform solder contacts 30 also can be according to arbitrary order arrangement.
Wherein, the quantity of secondary grid line 10 can be selected in the scope of 80 ~ 100, and its width can be selected in the scope of 30 ~ 50 μm.The quantity M of thin grid line 20 can select in the scope of 10 ~ 20, and its width D can be selected in the scope of 0.10 ~ 0.25mm.The quantity N of the solder contacts 30 that each thin grid line 20 is arranged can select in the scope of 5 ~ 15, the diameter R of circular solder contacts 30 can select in the scope of 0.2 ~ 1mm, and the diameter R meeting solder contacts 30 is greater than the width of thin grid line 20, the length of side L of square solder contacts 30 can select in the scope of 0.2 ~ 1mm, and the length of side that will meet solder contacts 30 is greater than the width of thin grid line 20.In the present embodiment, the quantity of secondary grid line 10 is 90, and the width of secondary grid line 10 is 40 μm; The quantity M=15 of thin grid line 20, the width D of thin grid line 20 is 0.2mm; The quantity N=10 of the solder contacts 30 on each thin grid line 20, the diameter R of circular solder contacts 30 is 0.8mm, and square solder contacts 30 is specially square, and its length of side L is 0.8mm.
Wherein, described solder contacts 30 lamination is arranged on described thin grid line 20.Particularly, when preparing electrode structure at right side, first prepare secondary grid line 10 and thin grid line 20 by one-step print technique, and then on described thin grid line 20, prepare solder contacts 30 by secondary printing technique.
In the present embodiment, as shown in Figure 1, described many secondary grid lines 10 equidistantly arrange along first direction (Y-direction as in Fig. 1), the thin grid line 20 of described M bar equidistantly arranges along second direction (X-direction as in Fig. 1), and described second direction is mutually vertical with described first direction.Further, described solder contacts 30 is arranged at described thin grid line 20 position crossing with described secondary grid line 10, and the N number of solder contacts 30 on each thin grid line 20 equidistantly arranges along on the length direction of described thin grid line 20.
More specifically, in the present embodiment, as shown in Figure 1, the arrangement pitches of the N number of solder contacts 30 on each thin grid line 20 is all equal, and therefore, in whole electrode structure at right side, all solder contacts 30 is capable in N × array distribution of M row.Particularly, because circular on each thin grid line 20 and square solder contacts 30 alternate intervals is arranged, N capable × solder contacts 30 that arranges of M in, the solder contacts 30 of odd number behavior circle, the solder contacts 30 that even number behavior is square; Certainly, the solder contacts 30 of even number behavior circle also can be set to, the solder contacts 30 that odd number behavior is square.
Further, in some other embodiments, also can be that to arrange the shape being positioned at solder contacts 30 on a thin grid line 20 identical, and the shape of solder contacts 30 on adjacent two thin grid lines 20 be different.Particularly, the shape that can arrange the solder contacts 30 on the thin grid line 20 of Article 1 is for circular, and the shape arranging the solder contacts 30 on the thin grid line of Article 2 20 is square, namely N capable × solder contacts 30 of M row in, odd number is classified as circular solder contacts 30, and even number is classified as square solder contacts 30; Certainly, also can be set to even number and be classified as circular solder contacts 30, odd number is classified as square solder contacts 30.
The front electrode of the crystal silicon solar batteries that above embodiment provides can reduce shading-area effectively.Be of a size of the square of 156mm × 156mm for solar battery front side, the electrode structure at right side provided according to front electrode and the embodiment of the present invention of existing three main grids calculates shading-area respectively:
1, the electrode structure at right side of existing three main grids.In the structure of conventional three wide main gate line of 1.5mm, 90 40 μm of secondary grid lines, main gate line can be designed to hollow out form, reduces the silver slurry that printing uses, but during welding, still can burn-on the welding about 1.5mm width and keeping the sun off in all regions of main grid.Therefore main grid place is 1.5mm × 3 × 156mm=702mm to the shielded area of sunlight
2; Secondary grid line and 4 frame shielded areas are 0.04mm × (90+2) × (153.5mm-1.5mm × 3)+2 × 153.5mm × 0.04mm=560.6mm
2.Total shielded area of conventional three main grid front electrodes is 1262.6mm
2.
2, the electrode structure at right side that provides of the embodiment of the present invention.According to example particularly, the quantity of secondary grid line is 90, and its width is 40 μm; The quantity of thin grid line is 15, and its width is 0.2mm; The quantity of the solder contacts on each thin grid line is 10, and the shape half of solder contacts is circular, and its diameter R is 0.8mm, and second half is square, and its length of side is 0.8mm.Then:
A, 15 thin grid lines to the shielded area of sunlight are: 0.2mm × 15 × 156mm=468mm
2;
B, secondary grid line and 4 frames blocking as 0.04mm × (90+2) × (153.5mm-0.2mm × 10)+0.04mm × 2 × 153.5mm=566.12mm sunlight
2;
C, except thin grid line 0.8mm diameter circular pattern to sunlight block for:
[π×0.4
2mm
2-(0.8mm-0.2mm)
×0.04mm-π×0.4
2mm
2×29°×2÷360°-0.2×0.4×sin14.5]×75＝28.32mm
2；
D, except thin grid line square pattern the blocking as (0.8mm-0.2mm) × 0.8mm × 75=36mm sunlight of the 0.8mm length of side
2;
Total shielded area is above: 468mm
2+ 566.12mm
2+ 28.32mm
2+ 36mm
2=1098.44mm
2.The front electrode that the embodiment of the present invention provides is compared to the front electrode of existing three main grids, and its shading-area reduced is: 1262.6mm
2-1098.44mm
2=164.16mm
2.
In some other embodiments, with reference to as above provided front electrode, wherein solder contacts 30 can also be designed to ellipse.Namely, the shape of solder contacts 30 comprises ellipse and circle, or comprise oval and square, can also be comprise simultaneously oval and circular and square, oval and circular and square alternate intervals setting or arrange according to random order on each thin grid line 20.Particularly, the solder contacts 30 of ellipse as shown in Figure 3, oval solder contacts 30 is also be arranged at described thin grid line 20 position crossing with described secondary grid line 10.Oval long limit is identical with thin grid line 20 bearing of trend, and oval minor face is identical with secondary grid line 10 bearing of trend.Wherein, the length of oval minor face can be selected in the scope of 0.2 ~ 1mm, and the length L1 that will meet the minor face of solder contacts 30 is greater than the width D of thin grid line 20.
In sum, in the front electrode of the crystal silicon solar batteries that above embodiment provides, the thin grid line that the more width of usage quantity are less replaces main gate line of the prior art, shading-area is less generally, reduce light loss, and the thin grid line of greater number is evenly distributed on solar battery front side, the electric current that secondary grid line is collected can more successfully be derived, and reduces power loss; In addition, thin grid line superimposed layer is provided with the larger square circular or oval solder contacts of area, adds the contact area of pad and the height of pad, when welding welding, the less problem of welding and welding of battery film exception.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.
Claims (10)
1. a front electrode for crystal silicon solar batteries, comprises many secondary grid lines along the spaced arrangement of first direction, it is characterized in that,
Described front electrode also comprises the thin grid line of M bar along the spaced arrangement of second direction, and described thin grid line and described secondary grid line are electrically connected, and the width of described thin grid line is 0.10 ~ 0.25mm; Wherein, M=10 ~ 20;
Wherein, each thin grid line is also provided with spaced N number of solder contacts, described solder contacts lamination to be arranged on described thin grid line and to be electrically connected with described thin grid line, it is two or more that the shape of described solder contacts is set in square, circular and ellipse, the length range of the minor face of the described square length of side, circular diameter or ellipse is 0.2 ~ 1mm respectively, and the length of the minor face of the described square length of side, circular diameter or ellipse is greater than the width of described thin grid line respectively; Wherein, N=5 ~ 15.
2. the front electrode of crystal silicon solar batteries according to claim 1, is characterized in that, described solder contacts is formed on described thin grid line by secondary printing technique.
3. the front electrode of crystal silicon solar batteries according to claim 1, it is characterized in that, described many secondary grid lines equidistantly arrange along first direction, and the thin grid line of described M bar equidistantly arranges along second direction, and described second direction is mutually vertical with described first direction.
4. the front electrode of crystal silicon solar batteries according to claim 3, is characterized in that, the quantity of described secondary grid line is 80 ~ 100.
5., according to the front electrode of the arbitrary described crystal silicon solar batteries of claim 1-4, it is characterized in that, described solder contacts is arranged at the described thin grid line position crossing with described secondary grid line.
6. the front electrode of crystal silicon solar batteries according to claim 5, is characterized in that, the N number of solder contacts on each thin grid line equidistantly arranges along on the length direction of described thin grid line.
7. the front electrode of crystal silicon solar batteries according to claim 6, is characterized in that, all solder contacts in described front electrode be N capable × M row array distribution.
8. the front electrode of crystal silicon solar batteries according to claim 6, is characterized in that, on each thin grid line, difform solder contacts alternate intervals is arranged.
9. the front electrode of crystal silicon solar batteries according to claim 8, is characterized in that, the width of described thin grid line is 0.2mm; The shape of described solder contacts comprises square and circle, and the described foursquare length of side is 0.8mm, and the diameter of described circle is 0.8mm; Wherein, M=15, N=10.
10. the front electrode of crystal silicon solar batteries according to claim 6, is characterized in that, the shape being positioned at the solder contacts on a thin grid line is identical, and the shape of solder contacts on adjacent two thin grid lines is different.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058600.2A CN105529373B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
| PCT/CN2016/092194 WO2017128668A1 (en) | 2016-01-28 | 2016-07-29 | Front electrode of crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058600.2A CN105529373B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
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| Publication Number | Publication Date |
|---|---|
| CN105529373A true CN105529373A (en) | 2016-04-27 |
| CN105529373B CN105529373B (en) | 2018-01-16 |
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| CN201610058600.2A Active CN105529373B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
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| WO (1) | WO2017128668A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017128668A1 (en) * | 2016-01-28 | 2017-08-03 | 王能青 | Front electrode of crystalline silicon solar cell |
| WO2017128666A1 (en) * | 2016-01-28 | 2017-08-03 | 王能青 | Crystalline silicon solar cell and front electrode |
| CN107170844A (en) * | 2017-07-10 | 2017-09-15 | 苏州腾晖光伏技术有限公司 | A kind of solar battery sheet and photovoltaic module without main grid |
| CN108010970A (en) * | 2017-11-17 | 2018-05-08 | 南通苏民新能源科技有限公司 | A kind of interdigital back contacts crystalline silicon solar battery electrode and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108481892A (en) * | 2018-04-11 | 2018-09-04 | 张家港国龙光伏科技有限公司 | A kind of secondary printing is knotted version without net |
| CN109873054A (en) * | 2019-04-04 | 2019-06-11 | 乐山新天源太阳能科技有限公司 | Black silicon solar cell production line |
| CN114122159A (en) * | 2021-07-08 | 2022-03-01 | 天合光能股份有限公司 | Battery piece |
| CN117790596A (en) | 2021-08-27 | 2024-03-29 | 晶科能源股份有限公司 | Photovoltaic cell piece Battery assembly and preparation process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011005026A2 (en) * | 2009-07-09 | 2011-01-13 | 주식회사 동진쎄미켐 | Composition for forming conductive electrodes |
| CN204332976U (en) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode structure at right side of solar cell |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100000602A1 (en) * | 2007-12-11 | 2010-01-07 | Evergreen Solar, Inc. | Photovoltaic Cell with Efficient Finger and Tab Layout |
| CN102800713A (en) * | 2012-08-27 | 2012-11-28 | 英利能源（中国）有限公司 | Solar cell sheet and solar cell |
| CN203250754U (en) * | 2013-05-24 | 2013-10-23 | 浙江昱辉阳光能源江苏有限公司 | Front grid line of solar cell and solar cell |
| CN105529373B (en) * | 2016-01-28 | 2018-01-16 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
-
2016
- 2016-01-28 CN CN201610058600.2A patent/CN105529373B/en active Active
- 2016-07-29 WO PCT/CN2016/092194 patent/WO2017128668A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011005026A2 (en) * | 2009-07-09 | 2011-01-13 | 주식회사 동진쎄미켐 | Composition for forming conductive electrodes |
| CN204332976U (en) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode structure at right side of solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017128668A1 (en) * | 2016-01-28 | 2017-08-03 | 王能青 | Front electrode of crystalline silicon solar cell |
| WO2017128666A1 (en) * | 2016-01-28 | 2017-08-03 | 王能青 | Crystalline silicon solar cell and front electrode |
| CN107170844A (en) * | 2017-07-10 | 2017-09-15 | 苏州腾晖光伏技术有限公司 | A kind of solar battery sheet and photovoltaic module without main grid |
| CN108010970A (en) * | 2017-11-17 | 2018-05-08 | 南通苏民新能源科技有限公司 | A kind of interdigital back contacts crystalline silicon solar battery electrode and preparation method thereof |
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| Publication number | Publication date |
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| CN105529373B (en) | 2018-01-16 |
| WO2017128668A1 (en) | 2017-08-03 |
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