CN108461558A - Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect - Google Patents
Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect Download PDFInfo
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- CN108461558A CN108461558A CN201810138616.3A CN201810138616A CN108461558A CN 108461558 A CN108461558 A CN 108461558A CN 201810138616 A CN201810138616 A CN 201810138616A CN 108461558 A CN108461558 A CN 108461558A
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- battery strings
- hot spot
- stacked wafer
- spot effect
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- 239000000203 mixture Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 12
- 230000007774 longterm Effects 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 78
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
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- 238000003475 lamination Methods 0.000 description 7
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- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
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- 238000007650 screen-printing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
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- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of two-sided photovoltaic stacked wafer moudles for avoiding generating hot spot effect, including terminal box and the battery strings group that is encapsulated between front plate and backplate;Battery strings group is made of several battery strings, and terminal box is disposed longitudinally on backplate, and terminal box blocks at least two batteries at least one battery strings.Blocking for terminal box will not form hot spot effect being blocked on cell piece, and component long-term reliability is unaffected.The power of unobstructed cell piece will not be blocked cell piece dissipation as when hot spot effect.
Description
Technical field
The invention belongs to photovoltaic module technical fields, and in particular to a kind of two-sided photovoltaic laminate for avoiding generating hot spot effect
Component.
Background technology
Solar cell is a kind of device that luminous energy is converted into direct current using photovoltaic effect.According to photoelectricity
The difference of transition material, solar cell include monocrystalline silicon, polysilicon, amorphous silicon membrane, Cadimium telluride thin film, and copper and indium gallium tin is thin
Film, GaAs, fuel sensitization, perovskite, multiple types such as lamination.One of the most common is crystal silicon solar energy battery, including
Monocrystaline silicon solar cell and polysilicon solar cell.Solar cell is usually sheet, can absorb luminous energy and by its turn
Turn to electric energy is referred to as extinction face or front on one side, is in addition referred to as the back side on one side.For part solar cell, the back side
It is electric energy that can also absorb and convert luminous energy, these solar cells are referred to as double-side cell.
The electrode pattern of crystal silicon solar cell sheet front and back, by the side that solar cell surface metallizes
It is prepared by method.Common method for metallising is to be printed on the electrocondution slurry containing Argent grain in such a way that silk-screen printing adds sintering
Battery surface, by the halftone graphic designs for changing silk-screen printing, thus it is possible to vary electrode pattern.
Crystal silicon solar energy battery is other than electrode zone, and front is usually silicon nitride film, and the back side is usually silk-screen printing
Aluminum slurry and through oversintering formed Al-BSF.Light can be absorbed for some special solar cells, such as positive and negative
Two-sided P-type silicon PERC batteries or two-sided N-type silicon PERT batteries, the region surface other than backplate and the thin grid line of metallizing
It is also silicon nitride film.For two-sided HJT batteries, i.e. hetero-junction solar cell, the electrode of front and back and the region other than grid line
Surface is transparent conductive oxide film, such as tin indium oxide ITO.
By multiple solar cell electricity interlinkage post packages in glass or organic polymer, what is obtained can be used for a long time
Photovoltaic apparatus, be referred to as photovoltaic module.Cell piece mutual contact mode in Crystalline Silicon PV Module, common are cell piece
It is ranked sequentially, using the tin-coated welding strip containing Copper base material as interconnecting strip, the front that interconnecting strip one end is welded on first cell piece is main
On grid line, the interconnecting strip other end is welded in the backplate of second adjacent cell piece.The both ends of second interconnecting strip point
It is not welded in the front main grid line of second cell piece and the back side grid line of third piece cell piece, and so on.Thus by institute
Some cell pieces are connected into a string.
The technology that stacked wafer moudle is interconnected using another cell piece.As shown in Figure 1, by solar battery sheet first
One is placed on the lower section of another cell piece second, makes electrode phase mutual respect of the positive gate line electrode in the cell piece first side with the second back side
It closes.Conductive material formation is used to be conductively connected between two electrodes.At the same time, the other side of cell piece second is placed in battery
The lower section of piece third so that the positive gate line electrode in the second other side and the electrode at third back side overlap, and adopt between two electrodes
It is conductively connected with conductive material formation.After the same method, multi-disc cell piece can be sequentially interconnected in form battery strings.
Lamination mutual contact mode may also used to form interconnection between solar cell is sliced.Solar cell is sliced
Refer to the small pieces for a piece of complete or incomplete solar cell being cut by machinery, laser or other modes.Solar-electricity
The shape of pond slice can be polygon shaped like rectangle, triangle, curvilinear figure such as circle, fan-shaped, ellipse or irregular component
Shape.The number of sections that a piece of solar cell can be cut into is K pieces, wherein 1≤K≤20.
For the solar battery sheet of square or rectangle, shape can be cut to, K rectangle of size all same is cut
Piece, wherein 1≤K≤20.
For the quasi- rectangle solar battery sheet with chamfering, it can be cut into K pieces slice battery, wherein 1≤K≤
20, and some slice batteries are the quasi- rectangle for having 1 or 2 chamfering, some is sliced battery as the rectangle of no chamfering.Such as Fig. 2 is
Solar battery sheet is cut into a kind of modes of five slice batteries, the slice battery of the leftmost side and the rightmost side carries chamfering, in
Between three slice batteries there is no chamfering.
Conductive material in stacked wafer moudle in same battery strings between adjacent cell plate electrode includes conducting resinl, conducting resinl
The materials such as band, welding or tin cream.According to the characteristic of conductive material, corresponding preparation method should be selected.For using conducting resinl shape
At the battery strings of electricity interlinkage, the method that dispensing or silk-screen printing may be used.
The main component of conducting resinl includes resin material matrix and conductive filler.Filler therein is typically silver or argentiferous
Particle.Compared with commonly applying tin copper strips, conducting resinl can not only connect at good mechanical adhering force with conductive with silver electrode
The conducting resinl for connecing, while having can also form good viscous with other surfaces of cell piece, such as silicon nitride film layer or silicon materials
It connects.
Since silver is a kind of noble metal, the cost of solar cell size and conducting resinl containing silver is all relatively more high
It is expensive.For example various carbon materials of cheap metal material such as copper, aluminium, nickel or non-metallic conducting material, tin indium oxide etc. may be used
The silver in slurry or conducting resinl is substituted, it can also be by changing the design of battery surface metal pattern or the design of conductive paste pattern
Carry out the corresponding usage amount for reducing silver paste or conducting resinl.
As shown in figure 3, photovoltaic laminate component can be divided into two kinds of horizontal version type and portrait type according to the orientation of battery strings.
The battery strings referred to as horizontal version type stacked wafer moudle parallel with component short side, the battery strings referred to as portrait type lamination parallel with component long side
Component.
A kind of circuit diagram of stacked wafer moudle using 2 parallel diodes is as shown in figure 4, multiple laminated batteries connection in series-parallel shapes
At battery strings group, each battery strings group is in parallel with 1 bypass diode, and 2 such battery strings groups are connected into as component.Using
Portrait type may be used in the stacked wafer moudle of this circuit, can also use horizontal version type.
It is sliced using two-sided laminated batteries or two-sided laminated batteries, the two-sided PERC laminated batteries of P-type silicon as previously mentioned,
The two-sided PERT laminated batteries of N-type silicon or HJT laminated batteries can obtain two-sided stacked wafer moudle by lamination process above-mentioned.
In two-sided stacked wafer moudle, it is divided into N number of long battery strings (N >=1) from left to right.Such as the portrait type in Fig. 3 is double
Face stacked wafer moudle contains 6 long battery strings altogether, is denoted as string A, B, C, D, E, F respectively.
In stacked wafer moudle, every welding positioned at the positive and negative extreme multiple battery strings of connection of component, referred to as busbar;It is all
It is to be located at component intermediate potential, and connect the welding of multiple battery strings, welding referred to as in parallel;It is every to be connected with welding in parallel, it walks
To the welding for being parallel to battery strings, welding is referred to as bypassed.
As shown in figure 5, the two-sided stacked wafer moudle of portrait type of prior art one is located at using two terminal boxes
The position of the center of two short sides of module backside inside partially.The equal length or approximately equal of battery strings A, B, C, D, E, F.In order to
Material Cost is saved, while improving the photoelectric conversion efficiency of component, the both ends of battery strings ABCDEF are apart from component short side both ends
Distance is shorter.
The position of terminal box is carried on the back at the back side of C, D string cell piece to be formed to corresponding cell piece in technical solution one
Face shading, serious also to will produce hot spot effect to reduce the generating capacity at the double-side assembly back side, reducing the long-term of component can
By property and service life.The prior art thinks that terminal box is arranged can cause hot spot effect at the cell piece back side, but concrete principle is such as
He Wei has relevant research.
Technical solution two is as shown in fig. 6,2 terminal boxes of module backside are located on the outside of battery strings, to not carried on the back to battery
Face generates and blocks.The both ends of battery strings ABCDEF are distant apart from the both ends of component short side in technical solution two, to increase
Glass, encapsulating material, the Material Costs such as frame, while reducing the photoelectric conversion efficiency of component.
Invention content
The present invention is intended to provide a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect, the present invention is directed to by right
The optimization of terminal box in two-sided stacked wafer moudle, solving back side shading present in existing several two-sided stacked wafer moudles leads to cell piece
The problem of hot spot.
The present invention is achieved through the following technical solutions above-mentioned purpose:
A kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect, including terminal box and it is encapsulated in front plate and the back side
Battery strings group between plate;Battery strings group is made of several battery strings, and terminal box is arranged on overleaf plate, and terminal box is blocked
The light-receiving surface of at least two cell pieces at least one battery strings.
The quantity that terminal box blocks battery strings is M, 1≤M≤10;Wherein, i-th of battery strings is by NiA cell piece composition, i
=1,2,3 ... M, 5≤Ni≤120;I-th of battery strings has Ni' a cell piece is wired box box body or terminal box bonding agent part hides
Gear, 2≤Ni’≤20。
Each cell piece area that is blocked is no more than the 50% of the cell piece gross area.
The cell piece is sliced by the solar cell of full wafer.
There are two the terminal boxes, is separately positioned in the middle part of backplate short side.
Two-sided photovoltaic stacked wafer moudle is Rimless or has border structure.
The shape of cell piece is rectangle or round rectangle, and the fillet number of round rectangle is 1,2,3 or 4.
When stacked wafer moudle is horizontal version type, terminal box is laterally arranged;When stacked wafer moudle is portrait type, terminal box is longitudinally disposed.
The upper and lower side of long battery strings is connect with a busbar respectively;Between the upper and lower short battery strings of long battery strings with it is in parallel
Welding connects;Bypass welding along component long side direction arrangement is arranged between two long battery strings, bypass welding and weldering in parallel
Band connection, and the both ends for bypassing welding extend to the end of long battery strings;The bypass welding and busbar of long battery strings end point
It is not connected to the both ends of the bypass diode in corresponding terminal box.
The front plate and backplate are glass, and hole is provided on backplate, bypass the end of welding and drawing for busbar
Outlet is pierced by from hole.
Compared with the existing technology, the present invention has the following technical effects:
The terminal box of the present invention is arranged on overleaf plate, and terminal box blocks at least two at least one battery strings
Battery can solve the problems, such as in the prior art when terminal box arrangement overleaf generates hot spot effect.Electricity in usual battery strings
The area that piece quantity more either cell pieces in pond are blocked is bigger or the maximum power point operating voltage of cell piece is smaller, just
It is more easy to happen hot spot effect, and bypass diode is caused to be connected.And the quantity for the cell piece that is blocked in same battery strings is enough
It is more, so that it may to avoid serious hot spot effect occurs being blocked on cell piece, and bypass diode will not to be caused to be connected.It is right
In double-side assembly, the sunlight irradiation level suffered by the back side is usually weaker, therefore when at least two cell pieces at least one battery strings
When being wired box and blocking, hot spot effect will not be formed being blocked on cell piece, component long-term reliability is unaffected.This
When the electric energy that sends out of unobstructed cell piece will not be blocked cell piece consumption as when hot spot effect.Have by several pieces
Have in the photovoltaic system that the said modules of same example edition type are composed in series, since all components all there is same rear connection box to hide
Keep off situation, therefore under the conditions of same external (irradiation intensity, ground reflecting rate, environment temperature etc.), the normal work of different components
Make that electrical currency is close, terminal box, which blocks the back side, will not cause additional hot spot to generate.
Description of the drawings
Fig. 1:The lamination of cell piece interconnects schematic diagram;
Fig. 2:Battery (left side) with chamfering is cut into 5 battery slices (right side);
Fig. 3:Horizontal version type (a) and portrait type (b) stacked wafer moudle;
Fig. 4:Stacked wafer moudle circuit diagram with 2 diodes;
Fig. 5:Existing scheme one;
Fig. 6:Existing scheme two;
Fig. 7:Improved two-sided lamination module backside schematic diagram
Fig. 8:Stacked wafer moudle current-voltage (IV) curve under different circumstance of occlusion.Curve A represents unobstructed situation in figure
The IV curves of lower component, 1,2,4,8,16,32 respectively represent in one of battery strings and have 1,2,4,8,16,32 battery respectively
Piece is blocked the IV curves in the case of 20% area;
Fig. 9:The specific embodiment structural schematic diagram of the present invention, the position that terminal box is installed in figure is in dashed rectangle
Place, bypasses welding and busbar lead-out wire is pierced by from glass trepanning.
It is marked in figure, 1- weldings, 2- busbars, 3- bypasses welding, 4- parallel connection weldings, 5- backplates, 6- terminal boxes.
Specific implementation mode
With reference to specific embodiments and the drawings, the invention will be further described:
As shown in fig. 7, terminal box 6 is located at module backside, there is the back side of M string (1≤M≤10) double-side cell strings to be wired box
It blocks, is wired in the M battery strings that box blocks, i-th of battery strings has Ni(i=1,2,3 ... m) piece battery (5≤Ni≤
120), wherein i-th of battery strings has Ni' a piece battery (2≤Ni'≤20) it is wired box box body or the screening of terminal box bonding agent part
Gear.
On this basis, more optimal scheme is that any a piece of cell backside is wired box box body or terminal box bonding agent
The ratio that institute's shielded area accounts for same cell backside area is no more than 50%.
Fig. 8 is that have 1,2,4,8,16,32 cell piece light-receiving surface face to be blocked in stacked wafer moudle in a battery strings respectively
Current -voltage curve figure after 20%.As seen from Figure 8, after 2 and the above cell piece are blocked, especially 4 or more batteries
After piece is blocked, the current -voltage curve of component and the current -voltage curve that more cell pieces are blocked are almost the same.From this
For current -voltage curve it is found that near maximum power point, the operating current of component is less than the operating current of unobstructed component, this
Mainly since the decline of the electric current for the battery strings that are blocked causes.If cell piece shielded area is less than 20% or is more than 20%, group
The fall of part operating current also correspondingly decreases or increases.For two-sided stacked wafer moudle, since the back side mainly receives earth's surface
Reflected light, its usual light intensity is no more than the 60% of positive light intensity, thus back light usually accounted for according to the photogenerated current generated it is total
The ratio of photogenerated current is no more than 37.5%.Therefore after the back side blocks 50%, the decline of component operation electric current is typically not greater than
18.75%.
Since stacked wafer moudle uses the circuit topological structure of multiple battery series-parallel connections, the electricity at the battery strings that are blocked both ends
It presses identical as unobstructed battery strings both end voltage in parallel.Hot spot effect in order to prevent, these batteries in parallel connection strings simultaneously with bypass
Diodes in parallel.In this case, if the voltage being blocked in battery strings per a piece of cell piece is all just, two poles are bypassed
Pipe is not turned on, and the voltage of parallel circuit by unobstructed battery strings and has the dynamic equilibrium shape for blocking and reaching after battery strings influence each other
State determines.Under normal conditions, since unobstructed battery strings occupy the majority, the voltage of parallel circuit is close to nothing under the above situation
Block initial voltage of the battery strings before reaching balance.
Due to there is the operating current for blocking battery strings smaller than unobstructed string, for there is the unobstructed battery blocked in battery strings
For piece, operating current is less than unobstructed state, and corresponding operating voltage can be higher than the operating voltage under unobstructed state.It is false
Fixed i-th (i=1,2,3 ... M) strings block in battery strings, and every unobstructed operating voltage is than unobstructed in unobstructed string
Piece averagely rises Vi, there is the operating voltage for blocking cell piece averagely to decline V than unobstructed in unobstructed string in the stringi', by
Following equation is set up known to above-mentioned analysis:
Vi*(Ni-Ni')=Vi’*Ni’ (1)
In order to meet the condition that bypass diode is not turned on, Vi' need to meet
Vi’<Vmp (2)
Wherein VmpIt is the unobstructed operating voltage at maximum power point
It can be obtained by (1) (2):
Vi*(Ni/Ni’-1)<Vmp (3)
ViIt is related with there is the shielded area ratio for blocking cell piece, the about big V of shielded areaiIt is bigger.
It can be obtained by (3)
Ni’>Ni*Vi/(Vmp+Vi) (4)
By (4) it is found that the area that the cell piece quantity in battery strings is more or cell piece is blocked is bigger, Huo Zhe electricity
The maximum power point operating voltage of pond piece is smaller, and the quantity of the corresponding cell piece that is blocked is more, could meet two poles of bypass
The demand that pipe is not turned on.
It is obtained with experimental data by calculating:Terminal box 6 is disposed longitudinally on backplate 5, and terminal box 6 blocks at least one
At least two batteries in a battery strings.
In these cases, blocking for terminal box will not form hot spot effect being blocked on cell piece, and component for a long time may be used
It is unaffected by property.Furtherly, the power of unobstructed cell piece will not be blocked battery as when hot spot effect
Piece dissipates.
In there is the photovoltaic system that the said modules with example edition type are composed in series by several pieces, since all components all have
There is same rear connection box to block situation, therefore (irradiation intensity, ground reflecting rate, environment temperature under the conditions of same external
Deng), the running current of different components is close, and terminal box, which blocks the back side, will not cause additional hot spot to generate.
Preferably, stacked wafer moudle is horizontal version type, and laterally setting can preferably carry out blocking typesetting terminal box 6.
Preferably, stacked wafer moudle is portrait type, and terminal box 6 is longitudinally disposed can preferably to be carried out blocking typesetting.
Component in the present invention can be rimless solar double-glass assemblies, can also be the solar double-glass assemblies for having frame.
The specific embodiment of the present invention as shown in figure 9, battery length string ABCDEF is made of 76 double-side cells slice,
The length of each battery slice is 156.75mm, and width is 26.125mm, and the shape of battery slice is rectangle or round rectangle, circle
The fillet number of angular moment shape is 1,2,3 or 4.The lamination overlap distance of adjacent cell slice is 1mm.
The both ends of long string ABCDEF are connected by welding with the busbar at component both ends respectively;Busbar by lead-out wire with
Bypass diode in terminal box is connected.Long string ABCDEF is made of two short string respectively, is connected by welding between short string.This
A little weldings connect together further through a welding 4 in parallel.Welding 4 in parallel is located between the short string of upper and lower battery, flat with component short side
Row.There are a bypass welding 3, the both ends of bypass welding 3 to be connected respectively with two bypass diodes between battery strings CD, bypass weldering
It is connected with welding 4 in parallel with 3 centre.
In the embodiment, the front and back of component is glass.It is provided with 2 holes on back glass 5, distinguishes in each hole
One end of bypass welding 3 or the lead-out wire of lead-out wire and a busbar 2 are drawn, welding 3 or its lead-out wire and busbar are bypassed
2 lead-out wire connects two ends of bypass diode respectively.Bypass diode is located in terminal box 6.Module backside has 2 terminal boxes,
Each terminal box blocks each four cell pieces formation at the both ends battery strings C and D.Shielded area accounts for about cell piece area
10%.
For the embodiment, if the positive solar irradiation amount of component is every square metre of 1000W, the reflected light spoke of module backside
The amount of penetrating be every square metre of 200W, C, D go here and there it is unobstructed in the case of operating voltage be about 0.55V.It calculates it is found that terminal box was blocked
C, the electric current of D strings declines than unobstructed situation is no more than 1.7%.The operating voltage of unobstructed cell piece in corresponding C, D string
Situation more unobstructed than C, D string rises above 0.01V, so the total working voltage of 68 unobstructed cell pieces rises in C, D string
No more than 0.68V, corresponding 8 have the operating voltage for blocking cell piece averagely to decline 0.085V, are much smaller than due to 0.085
0.55, by the analysis of front it is found that blocking for rear connection box will not cause hot spot effect.
Technical solution of the present invention has the beneficial effect that:
Blocking for terminal box will not form hot spot effect being blocked on cell piece, and component long-term reliability will not be by shadow
It rings.The power of unobstructed cell piece will not be blocked cell piece dissipation as when hot spot effect.
In there is the photovoltaic system that the said modules with example edition type are composed in series by several pieces, since all components all have
There is same rear connection box to block situation, therefore (irradiation intensity, ground reflecting rate, environment temperature under the conditions of same external
Deng), the running current of different components is close, and terminal box, which blocks the back side, will not cause additional hot spot to generate.
Protection scope of the present invention is not limited to the above embodiments, for those of ordinary skill in the art, if
If the various changes and deformations that carried out to the present invention belong within the scope of the claims in the present invention and equivalent technologies, the meaning of the present invention
Including figure also includes these changes and deforms.
Claims (10)
1. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect, which is characterized in that including terminal box (6) and be encapsulated in
Battery strings group between front plate and backplate (5);Battery strings group is made of several battery strings, and terminal box (6) setting is being carried on the back
On panel (5), and terminal box (6) blocks the light-receiving surface of at least two cell pieces at least one battery strings.
2. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that connect
The quantity that wire box (6) blocks battery strings is M, 1≤M≤10;Wherein, i-th of battery strings is by NiA cell piece composition, i=1,2,
3 ... M, 5≤Ni≤120;I-th of battery strings has Ni' a cell piece is wired box box body or terminal box bonding agent partial occlusion, 2≤
Ni’≤20。
3. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that every
A cell piece be blocked area be no more than the cell piece gross area 50%.
4. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that institute
Stating cell piece is sliced by the solar cell of full wafer.
5. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that institute
There are two the terminal boxes (6) stated, and is separately positioned in the middle part of backplate (5) short side.
6. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that double
Face photovoltaic laminate component is Rimless or has border structure.
7. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that electricity
The shape of pond piece is rectangle or round rectangle, and the fillet number of round rectangle is 1,2,3 or 4.
8. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 1, which is characterized in that folded
When piece component is horizontal version type, terminal box (6) is laterally arranged;When stacked wafer moudle is portrait type, terminal box (6) is longitudinally disposed.
9. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to any one of claims 1 to 8,
It is characterized in that, the upper and lower side of long battery strings is connect with a busbar (2) respectively;Between the upper and lower short battery strings of long battery strings with
Welding (4) connection in parallel;Bypass welding (3) along component long side direction arrangement is arranged between two long battery strings, bypass weldering
Band (3) extends to the end of long battery strings with the both ends that welding (4) in parallel connect, and bypasses welding (3);Long battery strings end
Bypass welding (3) and busbar (2) are connected respectively to the both ends of the bypass diode in corresponding terminal box (6).
10. a kind of two-sided photovoltaic stacked wafer moudle for avoiding generating hot spot effect according to claim 9 any one, special
Sign is that the front plate and backplate (5) are glass, and hole, the end of bypass welding (3) and remittance are provided on backplate (5)
The lead-out wire of stream item (2) is pierced by from hole.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201810138616.3A CN108461558A (en) | 2018-02-10 | 2018-02-10 | Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect |
CN201811039750.4A CN109301010B (en) | 2018-02-10 | 2018-09-06 | Double-sided photovoltaic module |
CN201821456867.8U CN209000924U (en) | 2018-02-10 | 2018-09-06 | Two-sided photovoltaic module |
Applications Claiming Priority (1)
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CN201810138616.3A CN108461558A (en) | 2018-02-10 | 2018-02-10 | Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110034202A (en) * | 2019-03-20 | 2019-07-19 | 隆基绿能科技股份有限公司 | Photovoltaic module |
CN113158130A (en) * | 2021-03-09 | 2021-07-23 | 中国电建集团华东勘测设计研究院有限公司 | Method, equipment and medium for calculating radiance of shielding part of spindle of double-sided component |
CN113659025A (en) * | 2021-07-22 | 2021-11-16 | 横店集团东磁股份有限公司 | Novel photovoltaic module arrangement structure and implementation method thereof |
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2018
- 2018-02-10 CN CN201810138616.3A patent/CN108461558A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110034202A (en) * | 2019-03-20 | 2019-07-19 | 隆基绿能科技股份有限公司 | Photovoltaic module |
CN110034202B (en) * | 2019-03-20 | 2024-01-12 | 泰州隆基光伏科技有限公司 | Photovoltaic module |
CN113158130A (en) * | 2021-03-09 | 2021-07-23 | 中国电建集团华东勘测设计研究院有限公司 | Method, equipment and medium for calculating radiance of shielding part of spindle of double-sided component |
CN113158130B (en) * | 2021-03-09 | 2024-04-19 | 中国电建集团华东勘测设计研究院有限公司 | Method, equipment and medium for calculating emissivity of shielding part of spindle of double-sided assembly |
CN113659025A (en) * | 2021-07-22 | 2021-11-16 | 横店集团东磁股份有限公司 | Novel photovoltaic module arrangement structure and implementation method thereof |
CN113659025B (en) * | 2021-07-22 | 2023-08-11 | 横店集团东磁股份有限公司 | Photovoltaic module arrangement structure and implementation method thereof |
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Application publication date: 20180828 |