CN108305916B - A kind of MWT battery manufacture craft based on plating masking diaphragm plate - Google Patents
A kind of MWT battery manufacture craft based on plating masking diaphragm plate Download PDFInfo
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- CN108305916B CN108305916B CN201810179020.8A CN201810179020A CN108305916B CN 108305916 B CN108305916 B CN 108305916B CN 201810179020 A CN201810179020 A CN 201810179020A CN 108305916 B CN108305916 B CN 108305916B
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- 238000007747 plating Methods 0.000 title claims abstract description 60
- 230000000873 masking effect Effects 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 3
- 235000008216 herbs Nutrition 0.000 claims abstract description 3
- 210000002268 wool Anatomy 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 239000011265 semifinished product Substances 0.000 claims description 19
- 229910020776 SixNy Inorganic materials 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Secondary Cells (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of MWT battery manufacture crafts based on plating masking diaphragm plate, are related to MWT battery manufacture craft field；It successively includes laser opening, making herbs into wool, diffusion, etching, front plated film, utilizes plating masking diaphragm plate region back side coating film, printing, sintering and test stepping；Battery of the invention is by plating back side film using masking plate region, the regional area of non-illuminated surface is set to insulate by film plating layer, emitter and the isolation of base area metallic conduction channel, front introduces back side termination electrode, although coplanar but desired insulation, prevent battery emitter and base area conducting causes positive and negative anodes to leak electricity, solving prevents manufacturing process steps present in emitter and base region electric leakage scheme more in existing solar battery, making apparatus precision and material requirements are high, it is unstable to the low problem of photoelectric conversion efficiency to export electric current, reach desired insulation to guarantee outputting current steadily and promote transfer efficiency, only increase the effect that two steps are conducive to large-scale production in original manufacture craft.
Description
Technical field
The present invention relates to MWT battery manufacture craft field, especially a kind of MWT battery based on plating masking diaphragm plate makes work
Skill.
Background technique
MWT (Metal Wrap Through) battery is to promote photoelectric conversion as a kind of new structural solar cell
One of efficiency, the loss of reduction power output and technology path of every watt of power consumption cost.It is characterized in that using photoetching and wet hair, swashing
Front main grid electrode is transferred to the back side of battery by these holes to battery surface aperture by the technologies such as drill finish hole, to take
Disappear traditional solar cell front main grid arrangement, battery front surface remained again without shading grid line or only the thin grid of a small amount of metal with
Collected current, and then the metallic conducting wire structure guidance electric current in through hole carries out simultaneously to battery back surface in its back surface
Coplanar positive and negative electrode link, forms cell array power generation module group.
The requirement of industrial production cost and energy consumption is considered in recent years, generallys use laser technology in silicon wafer in industrial production
On make these conductive holes, then re-expand to form N++ structure in the hole gate contact zone Nei Jixi, and replace primary gate electrode in hole
Contact zone silk-screen is sintered to form metal-semiconductor contact, and the photogenerated current for enabling battery p-n interface to generate smoothly exports to the back side
Corresponding collecting region.However in this configuration, due to MWT battery at perforation metal (usually Ag/Cu metallic conductor) and
Low Schottky barrier (0.3~0.4eV) between p-type silicon below interface, generates under the operating voltage of cells
Photo-generated carrier is also easily directly through silicon semiconductor layer, and metallic conduction channel is flowed out along hole, so that emitter contact and base
Occur local electric leakage short circuit between area's contact, the terminal output electric current of final battery, photoelectric conversion efficiency and generated output all by
It influences, the local electric leakage of single cell piece may cause the battery component after series welding, system heat generation, and subsequent use may blow light
Photovoltaic generating system influences the safety and stability of system.
Electric leakage solution relevant to MWT battery mainly has following three kinds at present: (1) being with Sunpower company, the U.S.
P-n junction and counter electrode grid line are all shifted to electricity by the back side interdigitated emitter of representative and the IBC battery of electrode, the battery structure
The pond back side overleaf forms pectination intersection construction, and corresponding positive and negative electrode retraction certain distance is also intersected between emitter and BSF
It is arranged in the back side, front shading-area is zero, can be accomplished photogenerated current ultimate attainment.But this battery needs to be applied to 20 steps or more
The techniques such as diffusion, oxidation and mask lithography, and coordination galvanization or accurate electrode compartments chromatography technology guarantee emitter and base area
Between circuit isolation, processing step is various complicated and energy consumption is huge, while the technology path is to the quality requirement of silicon chip substrate
It is higher, the other high purity single crystal N-type silicon chip of semiconductor grade is mostly used, mass production is at high cost；(2) emitter region break-through solar cell
(EWT battery): this battery has also got rid of battery front side grid line, generally first in a silicon substrate with photoetching and wet-chemical etching
Or laser drill, emitter region, the electricity that p-n junction generates then are diffuseed to form in front surface and back side regional area and hole
Stream is guided by the metal filling conducting channel in hole to the rear electrode for being located at identical diffusing, doping area.Before this battery
The metal collection channel of surface emitting pole is all cancelled, and all photogenerated currents that generate are by the conductive ditch of metal filling in hole
Road conduction, therefore the battery requires the recombination rate of hole with very high density, low hole wall and front and rear surfaces generally to reduce string
Resistance improves open-circuit voltage, and otherwise photoelectric conversion efficiency is unable to get effective promotion；(3) becket is around (MWA) battery: with it is above
Two kinds of batteries are compared, and this battery is the most similar to MWT, the electricity that this battery uses the thin grid of conductive silver paste to generate battery front side
Stream is directed in rear electrode by silicon wafer side, since the transfer of main grid is so that the increase of battery effective area of shining light, but the back side
Electrode needs additional machinery and laser grooving method to completely cut off base area and emitter region electrode, and the electrode in side and bottom surface connects
It touches area to re-expand to form selective emitting electrode structure raising efficiency, this not only adds additional 3~4 process steps and required
Equipment Material Cost, and for the battery production for increasingly tending to bulk silicon tablet raw material, the extension for conducting distance makes it
The negative effect that electric current advantage is increased by conduction resistance, efficiency rise limited.
Therefore it needs a kind of to prevent that emitter and base contact area from leaking electricity, preparation process is simple and at low cost and realize
The MWT battery manufacture craft of MWT battery stabling current output.
Summary of the invention
It is an object of the invention to: the present invention provides a kind of MWT battery manufacture crafts based on plating masking diaphragm plate, solve
Prevent that manufacturing process steps present in emitter and base region electric leakage scheme are more, making apparatus in existing solar battery
Precision and material requirements are high, it is unstable to the low problem of photoelectric conversion efficiency to export electric current.
The technical solution adopted by the invention is as follows:
It is a kind of based on plating masking diaphragm plate MWT battery manufacture craft, successively include laser opening, making herbs into wool, diffusion, etching,
Front plated film utilizes plating masking diaphragm plate region back side coating film, printing, sintering and test stepping.
Preferably, the laser opening technique is comprising steps of with N × N centre point arrangement square on p-type mono-/multi- crystal silicon chip
Battle array, laser open the conductive hole that diameter is Kum.
Preferably, the front coating process is comprising steps of the MWT semi-finished product battery that (a1) will be obtained after etched technique
The area p-type is put into the support plate bottom portion of groove that filming equipment configures downward upward in the area n-type of piece；(a2) antireflective coating is run
In cell piece p-n junction area, preparation whole face cover type reduced passivation resisting film completes front plated film after filming equipment program.
Preferably, described to shelter diaphragm plate region back side coating film technique comprising steps of (b1) complete front plated film using plating
Cell piece overturning 180 degree after be put into support plate bottom portion of groove；(b2) plating masking diaphragm plate is placed on to the p- of MWT semi-finished product cell piece
The area type surface and the conductive hole center of circle, the plating masking that plating is sheltered to the hole hole heart and cell piece that diaphragm plate lower surface diameter is Lmm
It will be integrally put into coated film deposition chamber after being aligned outside each side of diaphragm plate and cell piece and form insulating film layer；
Preferably, the printing technology has formed the semi-finished product cell piece of insulating film layer comprising steps of (c1) takes out, according to
N × N conductive hole centre point is arranged, and successively Ag main grid cathode and BSF-Al are carried on the back in silk-screen, drying to figure behind the area cell p-type surface
Anode is completed the area p-type and is printed；(c2) cell piece that printed by the area p-type will be completed and overturns 180 degree again, according to N × N conduction
Hole centre point arranges figure in the area the n-type surface screen-printed Ag collection thin grid completion area n-type of MWT semi-finished product cell piece
Printing.
Preferably, the sintering and test stepping technique comprising steps of the cell piece that (d1) will print be placed on 230~
895 DEG C of warm area flash baking sintering is annealed；(d2) performance measurement and group are carried out to N × N array point MWT finished battery piece
The production of MWT battery plate is completed in part encapsulation.
Preferably, the value of the N is 4-13, and the value of the K is 100-350, and the value of the L is 1.2-4.8.
Preferably, the insulating film layer material includes SixNy:H, Si3N4、SiONxAnd SiO2。
Preferably, the plating masking diaphragm plate material includes graphite, SixNy, SiC or Si.
Preferably, the reduced passivation resisting film includes SixNy:H, Si3N4, SiONx film layer.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1. battery of the invention makes the regional area of non-illuminated surface pass through plated film by plating back side film using masking plate region
Layer insulation, emitter and the isolation of base area metallic conduction channel, front introduces back side termination electrode, although coplanar desired insulation, Du
Insulation pond emitter and base area conducting cause positive and negative anodes to leak electricity, and the photogenerated current and photoelectric conversion efficiency that battery generates are in inside
Run out, only need to continue to use original solar level p-type mono-/multi- crystal silicon chip, open a small amount of laser hole can meet reduce shading and
Output electric current is stablized in conduction resistance requirement, promotes battery photogenerated current and output photoelectric transfer efficiency, manufacturing process steps only increase
Add two steps, solving prevents manufacturing process steps present in emitter and base region electric leakage scheme in existing solar battery
More, making apparatus precision and material requirements are high, output electric current is unstable so that the low problem of photoelectric conversion efficiency, has reached ideal
Insulation guarantees outputting current steadily and promotes transfer efficiency, increases by two steps only in original manufacture craft conducive to large-scale production
Effect；
2. the present invention carries out regional area sheltering plated film using plating membrane module, it is possible to reduce new on the basis of common process
The new equipments such as processing step, machinery and the laser grooving of increasing, oxidation and secondary diffusion (800~1200 DEG C of high-temperature technologies) gaseous source
It consumes energy with required high-temperature heating, reduces energy material consumption to the maximum extent from integrated artistic design route and equipment, personnel increase newly
Cost；Compared with the increase of conventional solar cell processing step, only two steps, control process point and environment point are reduced, newly added equipment quantity, object
Material and energy consumption are also accordingly reduced；
3. the present invention carries out regional area sheltering plated film using plating membrane module, only relative low temperature of increase (300~
500 DEG C) back side coating film technique, continue to use original common process equipment, consumptive material and technique allotment experience can reach MWT technique
The design effect of route, Innovation Input needed for reducing raising efficiency and processing procedure cost；
4. the present invention can carry out regional area sheltering plated film to the supplied materials silicon wafer of different size, different designs pattern,
And cooperates coating process that can effectively control the technical parameters such as conversion zone, thicknesses of layers and uniformity, make MWT battery
It can be promoted, be conducive to promote MWT battery correlation Diversified Products.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is process flow chart of the invention；
Fig. 2 is right angle silicon wafer or small chamfering silicon wafer MWT plating masking diaphragm plate schematic diagram of the invention；
Fig. 3 is circular arc chamfering silicon wafer MWT plating masking diaphragm plate schematic diagram of the invention；
Fig. 4 is the MWT plating masking diaphragm plate sectional view of 7 × 7 array points of the invention；
Fig. 5 is placed in the plating masking diaphragm plate structural schematic diagram of the MWT in filming equipment.
Label declaration: 1-MWT plating masking diaphragm plate upper surface, 2-MWT plating masking diaphragm plate lower surface, 3- penetration type hole, 4-
Circular arc chamfering silicon wafer plates masking diaphragm plate with MWT, and the right angle 5- silicon wafer plates masking diaphragm plate, the gas access 6- with MWT, and 7- plates film reaction
Area, 8- coated film deposition reaction chamber, 9- rf electric field excitaton source, 10- support plate groove, 11- filming equipment part support plate, 12- hair
Penetrate junction, the base area 13- face, 14- plating masking diaphragm plate hole, 15-MWT plating masking diaphragm plate, 16- conductive hole.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
It elaborates below with reference to Fig. 1-5 couples of present invention.
Embodiment 1
It is a kind of to include the following steps: that N takes 7, K that 180, L is taken to take 3.8 based on the MWT battery manufacture craft for plating masking diaphragm plate；
S1: with 7 × 7 centre points arrangement matrix on 156 silicon wafer of solar level p-type polycrystalline, laser opens the conduction of ф 180um
MWT semi-finished product cell piece is made after frequent regulation suede, diffusion and cleaning process for hole；
S2: the support plate groove configured by filming equipment on OTBDEPx, first by court, the area MWT semi-finished product cell piece n-type
The upper area p-type is put into bottom portion of groove downward；
S3: operation routine SixNy:H antireflective coating plated film preparation process is prepared in the p-n junction area of cell piece upper surface
The whole face cover type reduced passivation resisting film of 85nm thickness；
S4: reaction terminates to take out MWT semi-finished product cell piece one by one from groove, is overturn 180 degree, the area p-type is upward
The area n-type is put into support plate bottom portion of groove downward；
S5: by the MWT plating masking diaphragm plate of 156 ± 0.5mm of right-angle side, thickness 550um with 7 × 7 perforated holes centers of circle and battery
The opened conductive hole center of circle of the area piece p-type laser and 4 outside side lengths one by one relatively after, be placed on MWT semi-finished product cell piece
The area p-type surface；
S6: being furnished with 7 × 7 hole on the MWT plating masking diaphragm plate, material is graphite material, and hole circle in upper surface is straight
Diameter 4.6mm, towards OTBDEPx coated film deposition face, lower surface hole circular diameter 3.8mm is close to the p- of MWT semi-finished product cell piece
The area type surface；
S7: operation masking 11~14min of insulating film layer coating process in OTBDEPx coated film deposition chamber makes MWT plating masking
The regional area of ф 3.8mm generates SixNy:H insulating film around the upper surface of diaphragm plate, the area MWT battery p-type surface conductance hole
155~170nm；
S8: support plate groove transmits out from OTBDEPx deposit cavity after the completion of to be coated, and MWT is plated masking diaphragm plate with sucking pen
It is first taken away from MWT semi-finished product cell piece surface, then takes out semi-finished product cell piece one by one from plated film support plate groove；
S9: according to 7 × 7 diameter 3.8mm round matrix arrangement figure the area cell p-type face successively silk-screen, drying carry on the back
Ag main grid cathode and BSF-Al anode.Cause to leak electricity to prevent figure center of circle alignment offset, back Ag main grid cathode contact point is straight
Diameter is 3.2mm, and it is 4.8mm that BSF-Al anode non-printing district, which vacates contact spot diameter,；
S10: overturning battery again, according to 7 × 7 conductive hole centre points arrangement figure MWT semi-finished product cell piece n-
Silk-screen printing Ag in face collects thin grid where the area type surface, that is, p-n junction, is allowed to be opened with back Ag main grid cathode in S9 by laser
Conductive hole linking；
S11: warm area flash baking sintering, annealing full wafer MWT battery at 230~895 DEG C guarantee the area n-type and p-
It is connected after the sintering of the area type face Ag electrode, and the area p-type face back Ag main grid cathode and BSF-Al anode are by SixNy:H insulating film
Block isolation；
The MWT finished battery piece performance of the array point of S12:7 × 7 measures and component package；
S13: recessed with the MWT plating masking diaphragm plate and filming equipment support plate of 7 × 7 perforated holes of N2 rifle or CDA gas flow purging
Slot removes the foreign matters such as silicon wafer particle.
Embodiment 2
The applicable silicon wafer of MWT plating masking diaphragm plate can be circular arc chamfering silicon wafer or right angle silicon wafer, circle as Figure 2-3
Arc chamfering silicon wafer plates masking diaphragm plate 4 with MWT and silicon wafer MWT in right angle is plated and sheltered diaphragm plate 5, and circular arc chamfering silicon wafer arc side side length >
2mm, hole arrangement can also be by 4 × 4 arrangement arrays.
Embodiment 3
Laser opens the diameter K also desirable 1.2mm of also desirable 100um, plating masking diaphragm plate hole lower surface diameter L of conductive hole,
As shown in figure 5, MWT plating masking diaphragm plate 15 be placed in coated film deposition reaction chamber 8, at gas access 6 input NH3, N2, SiH4,
H2, O2, N2O, Ar and its mixed gas, MWT plating masking diaphragm plate 15 need to select 200~2200um thickness any graphite,
The production of SixNy, SiC or Si material plates masking 15 surface of diaphragm plate in MWT, and corresponding MWT battery light-receiving surface introduces at the termination electrode of the back side
Open plating masking diaphragm plate hole 140 six~169 of diameter 1.2mm, plating masking 14 center of circle of diaphragm plate hole and MWT battery
16 center location of conductive hole introduced at the termination electrode of the back side is identical, and 7 upper end of plated film reaction zone in coated film deposition reaction chamber 8 is set
It is equipped with rf electric field excitaton source 9, is provided with support plate groove 10 on filming equipment part support plate 11, on support plate groove 10 from bottom to up
MWT semi-finished product cell piece and plating masking diaphragm plate are set gradually, conductive hole 16, MWT semi-finished product cell is arranged in MWT semi-finished product battery on piece
Pond piece includes transmitting junction 12 and base area face 13, and conductive hole 16 is aligned with plating masking 14 center of circle of diaphragm plate hole；It is passed according to MWT battery
The layout of electrical conduction current can arbitrarily change hole location and number, and hole diameter determines that MWT battery back side emitter pole connects
Insulating regions area between touching and base contact, too small filming equipment and technique are difficult to ensure that the area SixNy:H, SiONx etc. are exhausted
Edge thicknesses of layers and uniformity cause undesirable with Ag metal contact insulation effect at perforation；The active electrode of excessive formation is exhausted
Edge isolated area can reduce gold between MWT battery back side base area and anode conduction Al metal again and partly contact, and cause conduction resistance excessive；
The hole wall of MWT plating masking the opened penetration type hole 3 of diaphragm plate and MWT plating masking 1 plane included angle of diaphragm plate upper surface are greater than 90 °, hole wall
With MWT plating masking 2 plane included angle of diaphragm plate lower surface less than 90 °, i.e., the hole of non-perpendicular break-through, sectional view as shown in Figure 4, MWT
Plating masking diaphragm plate upper surface 1 empty round diameter be naturally larger than MWT plating masking diaphragm plate lower surface 2 empty round diameter, lower surface
Emptying round diameter range is 1.2~4.8mm.Battery of the invention makes non-light by plating back side film using masking plate region
The regional area in face is insulated by film plating layer, and emitter and the isolation of base area metallic conduction channel, front introduce back side termination electrode, though
Right coplanar but desired insulation, prevents battery emitter and base area conducting causes positive and negative anodes to leak electricity, photogenerated current that battery generates and
Photoelectric conversion efficiency runs out in inside, only need to continue to use original solar level p-type list polysilicon chip, open a small amount of laser hole
It can meet and reduce shading and conduction resistance requirement, stablize output electric current, promote battery photogenerated current and output photoelectric conversion effect
Rate, manufacturing process steps only increase by two steps, and solving prevents emitter and base region electric leakage scheme in existing solar battery
Present in manufacturing process steps are more, making apparatus precision and material requirements are high, output electric current is unstable to which photoelectric conversion is imitated
The low problem of rate, reached desired insulation guarantee outputting current steadily and promoted transfer efficiency, in original manufacture craft only
Increase the effect that two steps are conducive to large-scale production.
Claims (5)
1. a kind of MWT battery manufacture craft based on plating masking diaphragm plate, it is characterised in that: successively include laser opening, making herbs into wool, expansion
It dissipates, etching, front plated film, utilize plating masking diaphragm plate region back side coating film, printing, sintering and test stepping；
The laser opening technique is comprising steps of with N × N centre point arrangement matrix on p-type mono-/multi- crystal silicon chip, laser is opened directly
Diameter is the conductive hole of Kum；
The front coating process comprising steps of (a1) by the n-type of the MWT semi-finished product cell piece obtained after etched technique
The area p-type is put into the support plate bottom portion of groove that filming equipment configures downward upward in area；(a2) antireflective coating filming equipment journey is run
In cell piece p-n junction area, preparation whole face cover type reduced passivation resisting film completes front plated film after sequence；
It is described to shelter diaphragm plate region back side coating film technique comprising steps of the cell piece that (b1) complete front plated film is overturn using plating
Support plate bottom portion of groove is put into after 180 degree；(b2) by plating masking diaphragm plate be placed on MWT semi-finished product cell piece the area p-type surface and
By the conductive hole center of circle, the plating masking each side of diaphragm plate of hole hole core diameter and cell piece that plating masking diaphragm plate lower surface diameter is Lmm
It will be integrally put into coated film deposition chamber after being aligned with cell piece outside and form insulating film layer；The hole-opening of diaphragm plate institute is sheltered in the plating
For the hole of non-perpendicular break-through, hole wall and MWT plating masking diaphragm plate upper surface (1) plane included angle of hole are greater than 90 °, hole wall with
MWT plating masking diaphragm plate lower surface (2) plane included angle is less than 90 °；
The printing technology is comprising steps of (c1) takes out the semi-finished product cell piece for having formed insulating film layer, according to N × N conductive hole
Centre point is arranged, and successively silk-screen, drying back Ag main grid cathode and BSF-Al anode complete p- to figure behind the area cell p-type surface
Printed by the area type；(c2) cell piece that printed by the area p-type will be completed and overturns 180 degree again, arranged according to N × N conductive hole centre point
Cloth figure is collected the thin grid completion area n-type in the area the n-type surface screen-printed Ag of MWT semi-finished product cell piece and is printed；
The sintering and test stepping technique are comprising steps of the cell piece that (d1) will print is placed on 230~895 DEG C of warm area
Flash baking sintering, annealing；(d2) performance measurement is carried out to N × N array point MWT finished battery piece and component package is completed
The production of MWT battery plate.
2. a kind of MWT battery manufacture craft based on plating masking diaphragm plate according to claim 1, it is characterised in that: the N
Value be 4-13, the value of the K is 100-350, and the value of the L is 1.2-4.8.
3. a kind of MWT battery manufacture craft based on plating masking diaphragm plate according to claim 1, it is characterised in that: described
Insulating film layer material includes SixNy:H, Si3N4、SiONxAnd SiO2。
4. a kind of MWT battery manufacture craft based on plating masking diaphragm plate according to claim 1, it is characterised in that: described
Plating masking diaphragm plate material includes graphite, SixNy, SiC or Si.
5. a kind of MWT battery manufacture craft based on plating masking diaphragm plate according to claim 1, it is characterised in that: described
Reduced passivation resisting film includes SixNy:H, Si3N4, SiONx film layer.
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| CN201810179020.8A CN108305916B (en) | 2018-03-05 | 2018-03-05 | A kind of MWT battery manufacture craft based on plating masking diaphragm plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810179020.8A CN108305916B (en) | 2018-03-05 | 2018-03-05 | A kind of MWT battery manufacture craft based on plating masking diaphragm plate |
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| CN108305916B true CN108305916B (en) | 2019-10-18 |
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|---|---|---|---|---|
| KR20110123312A (en) * | 2010-05-07 | 2011-11-15 | 현대중공업 주식회사 | Metal wrap through type solar cell |
| CN103117329A (en) * | 2013-02-17 | 2013-05-22 | 英利集团有限公司 | Heterojunction MWT (metal wrap through) battery and manufacturing method thereof and carrier boat |
| CN103594529A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
| CN103700715A (en) * | 2013-12-31 | 2014-04-02 | 天威新能源控股有限公司 | Crystalline-silicon back-contact solar cell and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202662656U (en) * | 2012-05-08 | 2013-01-09 | 山东力诺太阳能电力股份有限公司 | Graphite carrier plate for passivating back of solar cell |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110123312A (en) * | 2010-05-07 | 2011-11-15 | 현대중공업 주식회사 | Metal wrap through type solar cell |
| CN103117329A (en) * | 2013-02-17 | 2013-05-22 | 英利集团有限公司 | Heterojunction MWT (metal wrap through) battery and manufacturing method thereof and carrier boat |
| CN103594529A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
| CN103700715A (en) * | 2013-12-31 | 2014-04-02 | 天威新能源控股有限公司 | Crystalline-silicon back-contact solar cell and preparation method thereof |
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