CN103117329A - Heterojunction MWT (metal wrap through) battery and manufacturing method thereof and carrier boat - Google Patents
Heterojunction MWT (metal wrap through) battery and manufacturing method thereof and carrier boat Download PDFInfo
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- CN103117329A CN103117329A CN2013100512734A CN201310051273A CN103117329A CN 103117329 A CN103117329 A CN 103117329A CN 2013100512734 A CN2013100512734 A CN 2013100512734A CN 201310051273 A CN201310051273 A CN 201310051273A CN 103117329 A CN103117329 A CN 103117329A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a manufacturing method of a heterojunction MWT (metal wrap through) battery. The manufacturing method includes providing a substrate; completely blocking via holes on the back surface of the substrate by a mask to form a back doped layer, a back conductive layer and a back electrode layer on the back surface of the substrate; removing the mask, filling conductive materials in the via holes, forming grid lines on the front surface of the substrate, forming a contact area on the back surface of the substrate, enabling the grid lines to be electrically connected with the contact area through the conductive materials in the via holes and enabling the contact area to be in electric insulation with the back doped layer, the back conductive layer and the back electrode layer. Since the front grid lines of the battery are blocked completely in the contact area on the back surface by the mask, various film layers are manufactured on the back surface of the substrate later, and then selective formation of the film layers on the back surface is realized and the short-circuit problem of the film layers and the contact area on the back surface is eliminated fundamentally. Besides, other steps are omitted, manufacturing process is simple and easy, and production cost is reduced as compared with that of the prior art.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, relate to a kind of heterojunction MWT battery and preparation method thereof, slide glass boat.
Background technology
Solar cell is the semiconductor device that a kind of luminous energy with the sun is converted into electric energy.Because it is Green Product, can not cause environmental pollution, and what utilize is renewable resource, so under current energy starved situation, solar cell has vast potential for future development.
The kind of solar cell is varied, and wherein, hetero-junction solar cell is low with its preparation technology's temperature, conversion efficiency is high, low cost and other advantages is subject to more and more favoring in the industry.The MWT(metal winding) technology is also a kind of development trend of present technical field of solar batteries, not only can promote the photoelectric conversion efficiency of battery, and main is that it has advantage at the solar module manufacture view.
The MWT technology is introduced in the making of hetero-junction solar cell, just obtained heterojunction MWT battery, the structure of traditional heterojunction MWT battery as shown in Figure 1, comprise: substrate 101, be positioned at the positive passivation doped layer 102 of substrate face, positive TCO(transparent conductive film) 103 and front gate line 107, be positioned at passivating back doped layer 104, back side TCO105, backplate layer 106 and the contact zone 108 of substrate back; Wherein front gate line 107 is electrical connected by the contact zone 108 of the electric conducting material in via hole on substrate and substrate back, and backplate 106 is electrically insulated by gap 109 realizations and contact zone 108.
In prior art, the method of the structure cut-out that common employing will be grown good realizes being electrically insulated of backplate 106 and contact zone 108, but, find in the actual fabrication process, the said method technology difficulty is higher, and then causes the manufacture method technology difficulty of heterojunction MWT battery higher.
Summary of the invention
The invention provides a kind of heterojunction MWT battery and preparation method thereof, slide glass boat, to reach the purpose of simplifying heterojunction MWT cell making process.
For achieving the above object, the invention provides following technical scheme:
A kind of manufacture method of heterojunction MWT battery comprises: substrate is provided, and the front of described substrate is coated with the front passivation layer, and the back side is coated with backside passivation layer, and described substrate have at least one run through himself, the via hole of front passivation layer and backside passivation layer; Adopt the mask sheet that the via hole of described substrate back is blocked fully, the back side at substrate forms back side doped layer, form backside conductive layer on the surface of described back side doped layer away from substrate one side, form the backplate layer on the surface of described backside conductive layer away from substrate one side; Remove described mask sheet, filled conductive material in described via hole, and form front gate line in substrate face, do not formed the contact zone by the zone that back side doped layer, backside conductive layer and backplate layer cover at substrate back, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
Preferably, described employing mask sheet with the process that the via hole of described substrate back blocks fully is, described substrate is placed on the slide glass boat, at least one mask sheet that described slide glass boat comprises frame, be positioned at the zone that described frame surrounds reaches the supporting construction that is connected with frame with described mask sheet, and the via hole of described substrate back is blocked fully by described mask sheet.
Preferably, the area of the substrate back that blocks greater than described contact zone of the area of the substrate back that blocks of described mask sheet.
Preferably, the described back side at substrate forms back side doped layer, and is describedly forming between backside conductive layer on the surface of described back side doped layer away from substrate one side, and also comprise: the front at substrate forms the front doped layer; Form front side conductive layer on the surface of described front doped layer away from substrate one side.
Preferably, the formation technique of described backside passivation layer, back side doped layer, backside conductive layer, backplate layer, front passivation layer, front doped layer and front side conductive layer is identical or different, and described formation technique is chemical vapor deposition or physical vapor deposition.
Preferably, described in described via hole the filled conductive material, and form front gate line in substrate face, the process that forms the contact zone in the zone that substrate back is not covered by back side doped layer, backside conductive layer and backplate layer is, adopt silk-screen printing technique filled conductive material in described via hole, and at substrate face printing front gate line, in the printing contact zone, zone that substrate back is not covered by back side doped layer, backside conductive layer and backplate layer.
The present invention also provides a kind of slide glass boat, be applied to the described manufacture method of claim 1～6 any one, at least one mask sheet that described slide glass boat comprises frame, be positioned at the zone that described frame surrounds reaches the supporting construction that is connected with frame with described mask sheet; The area of the substrate back that described mask sheet covers is greater than the area of the shared substrate back of described via hole, and described mask sheet is used for blocking fully the via hole of described substrate back.
Preferably, described mask sheet is circular.
Preferably, the supporting construction of described slide glass boat comprises that many bar shapeds reticulate the Support Level of structure, and described mask sheet is positioned at the intersection point place of described Support Level.
The present invention also provides a kind of heterojunction MWT battery, comprising: substrate, and the front passivation layer of the described substrate face of covering, the backside passivation layer of the described substrate back of covering, at least one runs through the via hole of described substrate, front passivation layer and backside passivation layer; Be located at the back side doped layer of described substrate back, be located at the lip-deep backside conductive layer of described back side doped layer away from substrate one side, be located at the lip-deep backplate layer of described backside conductive layer away from substrate one side; Be positioned at the electric conducting material of described via hole, be positioned at the front gate line of substrate face, be positioned at substrate back not by the contact zone on the zone of back side doped layer, backside conductive layer and the covering of backplate layer, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
Preferably, described heterojunction MWT battery also comprises: the front doped layer that covers substrate face; Cover the lip-deep front side conductive layer of described front doped layer away from substrate one side.
Compared with prior art, technical scheme provided by the present invention has the following advantages at least:
the manufacture method of heterojunction MWT battery provided by the present invention, adopt the mask sheet that battery front side grid line contact zone is overleaf blocked fully, make again back side doped layer on substrate, backside conductive layer and backplate layer, realized back side doped layer, the selectivity of backside conductive layer and backplate layer forms, as seen, the manufacture method of heterojunction MWT battery provided by the present invention has just fundamentally been stopped contact zone and the back side doped layer of front gate line at cell backside in the process of making, the short circuit problem of backside conductive layer and backplate layer, need not additionally to increase other the step that they are electrically insulated that makes, manufacture craft is simple and easy to realize.
In addition, because need not additionally to increase other step, the manufacture method of heterojunction MWT battery provided by the present invention can realize that just contact zone and back side doped layer, backside conductive layer and backplate layer are electrically insulated, therefore also just save required equipment, material and the manpower etc. of step of extra increase, thereby reduced production cost with respect to prior art.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the profile of prior art heterojunction MWT battery;
The profile of each step of manufacture method of the heterojunction MWT battery that Fig. 2-Fig. 5 provides for the embodiment of the present invention;
The vertical view of the slide glass boat that adopts in the manufacture method of the heterojunction MWT battery that Fig. 6 provides for the embodiment of the present invention.
Embodiment
Just as stated in the Background Art, the method that the structure that it is good that available technology adopting will be grown is cut off realizes being electrically insulated of backplate and contact zone, but the technique of this method realizes that difficulty is higher, further causes the manufacture method technology difficulty of heterojunction MWT battery higher.
the inventor finds after deliberation, cause the high main cause of method technology difficulty that is electrically insulated that realizes backplate and contact zone to be: to cut off heterojunction MWT cell backside structure in prior art and generally adopt laser technology, and the passivation doped layer in structure, the structures such as TCO and backplate layer are nano level film, this makes cutting step very high to the requirement of the precision of laser technology, the degree of depth of cutting, the impact of the laser damage layer that forms etc. all becomes the factor that needs consideration, thereby cause laser cutting to realize that the method technology difficulty that is electrically insulated of backplate and contact zone is high.
Based on this, the invention provides a kind of manufacture method of heterojunction MWT battery, the method comprises:
Substrate is provided, and the front of described substrate is coated with the front passivation layer, and the back side is coated with backside passivation layer, and described substrate have at least one run through himself, the via hole of front passivation layer and backside passivation layer;
Adopt the mask sheet that the via hole of described substrate back is blocked fully, the back side at substrate forms back side doped layer, form backside conductive layer on the surface of described back side doped layer away from substrate one side, form the backplate layer on the surface of described backside conductive layer away from substrate one side;
Remove described mask sheet, filled conductive material in described via hole, and form front gate line in substrate face, do not formed the contact zone by the zone that back side doped layer, backside conductive layer and backplate layer cover at substrate back, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
the manufacture method of heterojunction MWT battery provided by the present invention, adopt the mask sheet that battery front side grid line contact zone is overleaf blocked fully, make again back side doped layer on substrate, backside conductive layer and backplate layer, realized back side doped layer, the selectivity of backside conductive layer and backplate layer forms, as seen, the manufacture method of heterojunction MWT battery provided by the present invention has just fundamentally been stopped contact zone and the back side doped layer of front gate line at cell backside in the process of making, the short circuit problem of backside conductive layer and backplate layer, need not additionally to increase other the step that they are electrically insulated that makes, manufacture craft is simple and easy to realize.
In addition, because need not additionally to increase other step, the manufacture method of heterojunction MWT battery provided by the present invention can realize that just contact zone and back side doped layer, backside conductive layer and backplate layer are electrically insulated, therefore also just saved required equipment, material and the manpower etc. of step of extra increase, thus relatively and prior art reduced production cost.
Be more than core concept of the present invention, can more become apparent for making above-mentioned purpose of the present invention, feature and advantage, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in actual fabrication.
The present embodiment provides a kind of manufacture method of heterojunction MWT battery, utilizes the slide glass boat be provided with the mask sheet, makes the mask sheet block front gate line contact zone overleaf, then forms structure, has realized that the selectivity of structure forms.Concrete, the method comprises the following steps:
Step S01: substrate is provided, and the front of described substrate is coated with the front passivation layer, and the back side is coated with backside passivation layer, and described substrate have at least one run through himself, the via hole of front passivation layer and backside passivation layer;
As shown in Figure 2, the type of the substrate 201 of selecting at first according to actual needs can be selected n type single crystal silicon, p type single crystal silicon, N-type polysilicon or P type polysilicon, and perhaps other can be as the material of solar cell, and the present embodiment is preferably the n type single crystal silicon sheet.
Secondly, make via hole 214 on the substrate 201 that provides, make via hole 214 run through this substrate 201, wherein make via hole 214 and can adopt laser drilling technique.
Need to prove, size, shape and the number of the via hole 214 of made can design according to actual needs accordingly, and the present embodiment does not limit this.
Again, adopt chemical vapor deposition method to form front passivation layer 202 in the front of substrate 201, form backside passivation layer 203 at the back side of substrate 201.
In addition, in the present invention, front passivation layer 202 and backside passivation layer 203 can also adopt physical vapor deposition process to form, and do not limit at this.
In the present embodiment, front passivation layer 202 and backside passivation layer 203 are preferably the amorphous silicon membrane of intrinsic, this intrinsic amorphous silicon film contains a large amount of passivation bases (as hydrogen atom), in the process that film forms, the passivation base that its inside is contained can enter surface and the inner performance passivation of substrate 201, repair the defective of substrate 201, thereby improve minority carrier life time, reduce charge carrier compound.
Need to prove, backside passivation layer 203 in the present embodiment does not adopt the method for mask to form, this is that the material due to backside passivation layer 203 is the amorphous silicon of intrinsic, resistivity is high, can conduct electricity hardly, although so the contact zone that forms in subsequent step and the back side doped layer contact with backside passivation layer 203 simultaneously,, contact zone and back side doped layer can't pass through backside passivation layer 203 generation electrical contacts; Therefore, backside passivation layer 203 can not adopt the method for mask to form.
Step S02: adopt the mask sheet that the via hole of described substrate back is blocked fully, the back side at substrate forms back side doped layer, form backside conductive layer on the surface of described back side doped layer away from substrate one side, form the backplate layer on the surface of described backside conductive layer away from substrate one side;
Wherein, the present embodiment adopts mode that the mask sheet blocks the via hole of described substrate back fully to be preferably described substrate 201 is placed on the slide glass boat with mask sheet 211, makes the mask sheet 211 on the slide glass boat block the via hole at described substrate 201 back sides fully.
For this reason, the present embodiment also provides a kind of slide glass boat that is applied to the manufacture method of heterojunction MWT battery provided by the present invention, after being placed in substrate 201 on this slide glass boat, the position relationship of substrate 201 and slide glass boat as shown in Figure 3, substrate 201 fronts (sensitive surface) up, the back side (shady face) directly contacts with the slide glass boat down, and via hole 214 is blocked fully by the mask sheet 211 on the slide glass boat.
In the present embodiment, at least one mask sheet 211 that the slide glass boat that adopts comprises frame 213, be positioned at the zone that described frame surrounds reaches the supporting construction 212 that is connected with frame 213 with mask sheet 211, wherein, the area at described mask sheet 211 covers substrate 201 back sides is greater than the area at shared substrate 201 back sides of described via hole 214, and described mask sheet 211 is used for blocking fully the via hole of described substrate back.
Concrete, frame 213 is used for supporting mask sheet 211 and supporting construction 212, makes deformation, displacement etc., convenient operation both do not occur; Mask sheet 211 is used for blocking via hole and the support substrate 201 at substrate 201 back sides, for the structure and the contact zone that form in subsequent step are better insulated, the area of mask sheet 211 is preferably much larger than the area of back side via hole, be circle as example take mask sheet and via hole, generally, the diameter of mask sheet is grade, and the diameter of via hole is micron order; Supporting construction 212 is used for mask sheet 211 is connected with frame connection, and supports mask sheet 211.
As shown in Figure 6, the vertical view of a kind of slide glass boat that provides for the embodiment of the present invention, the shape of mask sheet 211 is preferably consistent with the shape that via hole 214 presents on substrate 201 back sides, is preferably circle in the present embodiment; And the supporting construction 212 of slide glass boat comprises that many bar shapeds reticulate the Support Level of structure, and described mask sheet 211 is positioned at the intersection point place of described Support Level, and the surrounding of supporting construction 212 is surrounded by frame 213; Wherein because Support Level is very thin, and directly do not contact with battery, do not block so can not produce battery, affect the formation of rete on battery.
Need to prove, the slide glass boat that adopts in the present embodiment is creationary the mask sheet is added boat at the bottom of, make when forming rete in subsequent step, the part of being blocked by the mask sheet on cell piece can not form rete, the selectivity that realizes thus rete forms, and slide glass boat of the prior art is the frame shape, the whole one side of battery can be come out, can't realize the selective growth of rete, therefore, the slide glass boat that provides of the present embodiment can make the making step of the battery that only need to form in the subregion rete simplify.
In addition, the present embodiment only describes with the slide glass boat of said structure, but the present invention does not limit the concrete structure of this slide glass boat, in other embodiments, the size of mask sheet 211, shape and with equal respective change according to actual needs such as the position relationship of supporting construction 212, the structure of supporting construction 212.
as shown in Figure 4, when forming back side doped layer 204, when backside conductive layer 207 and backplate layer 208, substrate 201 is that the back side is placed on above-mentioned slide glass boat down, mask sheet 211 on the slide glass boat has blocked the via hole at substrate 201 back sides fully, therefore, after removing mask sheet 211, formed back side doped layer 204, backside conductive layer 207 and backplate layer 208 are not present in the zone that on substrate 201, the mask sheet blocks, that is to say, by adopting the method for mask, realized back side doped layer 204, the selectivity of backside conductive layer 207 and backplate layer 208 forms.
In addition, in the present embodiment, forming back side doped layer 204 and forming between backside conductive layer 207, also comprise: the front at substrate 201 forms front doped layer 205; Form front side conductive layer 206 on the surface of front doped layer 205 away from substrate 201 1 sides.
The material of described back side doped layer 204 is preferably heavily doped amorphous silicon, and doping type is identical with the doping type of substrate 201; The material of described front doped layer 205 is preferably the amorphous silicon of doping, and doping type is opposite with the doping type of substrate 201, and this front doped layer 205 is combined with substrate and is formed PN junction in the process that forms.
The material of described backside conductive layer 207 and front side conductive layer 206 is preferably the ITO(indium tin oxide), the IZO(indium-zinc oxide), the AZO(Al-Doped ZnO), BZO(boron zinc oxide), the IMO(molybdenum doped indium oxide) or IWO(indium tungsten oxide) in any one or a few, and material both can be the same or different.Backside conductive layer 207 and front side conductive layer 206 have advantages of high permeability and high conductivity, and the photoelectric conversion efficiency of battery is had favorable influence.
The material of described backplate layer 208 is preferably the metal material of good conductivity.
Form in the process of described backside passivation layer 203, back side doped layer 204, backside conductive layer 207, backplate layer 208, front passivation layer 202, front doped layer 205 and front side conductive layer 206 and can adopt chemical vapor deposition method or physical vapor deposition process.The present embodiment preferably adopts chemical vapor deposition method.
Need to prove, the present embodiment only sequentially describes as example take the formation of backside passivation layer, front passivation layer-back side doped layer-front doped layer-front side conductive layer-backside conductive layer-backplate layer, but the present invention does not limit the formation order of above-mentioned several parts, in other embodiments, can be according to the situation needs of reality, select different formation orders, as: backside passivation layer, front passivation layer-back side doped layer-backside conductive layer-backplate layer-front doped layer-front side conductive layer etc.
Step S03: remove described mask sheet, filled conductive material in described via hole, and form front gate line in substrate face, do not formed the contact zone by the zone that back side doped layer, backside conductive layer and backplate layer cover at substrate back, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
as shown in Figure 5, this step is the MWT technology to be introduced the committed step of hetero-junction solar cell, after removing mask sheet 211, at the interior filled conductive material of via hole 214, form front gate line 209 at battery front side simultaneously, form contact zone 210 at cell backside, and make front gate line 209, electric conducting material and contact zone 210 threes in via hole are electrical connected, adopt this mode, front gate line 209 is caused cell backside by the via hole 214 on substrate 201, and form contact zone 210 at cell backside, make the front of battery no longer need the large main grid line of shielded area, and then reduce shading loss, improve short circuit current, the final conversion efficiency that improves hetero-junction solar cell.
In the process of actual power, electric current in contact zone 210 is the electric current that battery front side produces, and the electric current in back side doped layer 204, backside conductive layer 207 and backplate layer 208 is the electric current that cell backside produces, therefore, electric current for fear of the positive back side is short-circuited, so, contact zone 210 and back side doped layer 204, backside conductive layer 207 and backplate layer 208 are electrically insulated.
Need to prove, for contact zone 210 is realized and being electrically insulated of back side doped layer 204, backside conductive layer 207 and backplate layer 208 smoothly, the area at the area at substrate 201 back sides that can make preferably that mask sheet 211 blocks blocks greater than contact zone 210 substrate 201 back sides.
Integrating step S01～step S03 can find, the method that the present embodiment provides, just realize being electrically insulated of contact zone 210 and back side doped layer 204, backside conductive layer 207 and backplate layer 208 in battery manufacturing process, need not additionally to increase again the step that other realizes insulation.
and in prior art, normally the battery each several part all form complete after, again to back side doped layer, backside conductive layer and backplate layer cut, to realize being electrically insulated of they and contact zone, cut the laser technology that adopts, not only be difficult to reach nano level back side doped layer, backside conductive layer and the required precision of backplate layer, make the manufacture craft difficulty large, and can't realize insulating fully, and the laser damage layer that causes in cutting affects the performance of battery itself, simultaneously, the equipment that laser cutting is required, manpower and material etc. have also increased the cost of making.
Therefore, the method that the present embodiment provides not only can accomplish that contact zone 210 and back side doped layer 204, backside conductive layer 207 and backplate layer 208 insulate fully, realizes simple for processly, and has saved production cost.
In this step, at the interior filled conductive material of via hole 214, and at the positive front gate line 209 that forms of substrate 201, form the preferred silk-screen printing technique that adopts in contact zone 210 on the zone that substrate back is blocked by mask sheet 211.
Embodiment is corresponding with said method, and the present invention also provides a kind of heterojunction MWT battery, adopts said method to make, and its structure comprises as shown in Figure 5:
Be located at the back side doped layer 204 at described substrate 201 back sides, be located at the lip-deep backside conductive layer 207 of described back side doped layer 204 away from substrate 201 1 sides, be located at the lip-deep backplate layer 208 of described backside conductive layer 207 away from substrate 201 1 sides;
Be positioned at the electric conducting material of described via hole, be positioned at the front gate line 209 in substrate 201 fronts, be positioned at the regional contact zone 210 that substrate 201 back sides are not covered by back side doped layer 204, backside conductive layer 207 and backplate layer 208, described front gate line 209 is electrical connected by the electric conducting material in described via hole and described contact zone 210, and described contact zone 210 is electrically insulated with described back side doped layer 204, backside conductive layer 207 and backplate layer 208.
The heterojunction MWT battery that the present embodiment provides is by the method for mask, realized the selective growth of back side doped layer 204, backside conductive layer 207 and backplate layer 208, contact zone 210 and back side doped layer 204, backside conductive layer 207 and backplate layer 208 are thoroughly insulated; And in prior art, owing to adopting laser cutting technique cutting back side doped layer, backside conductive layer and backplate layer, be difficult to reach the precision of higher cutting, so, can't realize insulating thoroughly, and then increase the compound of battery positive back side charge carrier; Therefore, the heterojunction MWT battery that the present embodiment provides reduces than the charge carrier of prior art is compound, and photoelectric conversion efficiency raises.
The heterojunction MWT battery that the present embodiment provides also comprises: the front doped layer 205 that covers substrate 201 fronts; Cover the lip-deep front side conductive layer 206 of described front doped layer 205 away from substrate one sides.
heterojunction MWT battery that the embodiment of the present invention provides and preparation method thereof, adopt the mask sheet that battery front side grid line contact zone is overleaf blocked fully, make again back side doped layer on substrate, backside conductive layer and backplate layer, realized back side doped layer, the selectivity of backside conductive layer and backplate layer forms, as seen, the manufacture method of heterojunction MWT battery provided by the present invention has just fundamentally been stopped contact zone and the back side doped layer of front gate line at cell backside in the process of making, the short circuit problem of backside conductive layer and backplate layer, need not additionally to increase other the step that they are electrically insulated that makes, manufacture craft is simple and easy to realize.
In addition, because need not additionally to increase other step, heterojunction MWT battery provided by the present invention and preparation method thereof can realize that just contact zone and back side doped layer, backside conductive layer and backplate layer are electrically insulated, therefore also just saved required equipment, material and the manpower etc. of step of extra increase, thus relatively and prior art reduced production cost.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (11)
1. the manufacture method of a heterojunction MWT battery, is characterized in that, comprising:
Substrate is provided, and the front of described substrate is coated with the front passivation layer, and the back side is coated with backside passivation layer, and described substrate have at least one run through himself, the via hole of front passivation layer and backside passivation layer;
Adopt the mask sheet that the via hole of described substrate back is blocked fully, the back side at substrate forms back side doped layer, form backside conductive layer on the surface of described back side doped layer away from substrate one side, form the backplate layer on the surface of described backside conductive layer away from substrate one side;
Remove described mask sheet, filled conductive material in described via hole, and form front gate line in substrate face, do not formed the contact zone by the zone that back side doped layer, backside conductive layer and backplate layer cover at substrate back, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
2. manufacture method according to claim 1, it is characterized in that, described employing mask sheet with the process that the via hole of described substrate back blocks fully is, described substrate is placed on the slide glass boat, at least one mask sheet that described slide glass boat comprises frame, be positioned at the zone that described frame surrounds reaches the supporting construction that is connected with frame with described mask sheet, and the via hole of described substrate back is blocked fully by described mask sheet.
3. manufacture method according to claim 2, is characterized in that, the area of the substrate back that the area of the substrate back that described mask sheet blocks blocks greater than described contact zone.
4. manufacture method according to claim 1, is characterized in that, the described back side at substrate forms back side doped layer, and describedly forming between backside conductive layer on the surface of described back side doped layer away from substrate one side, also comprises:
Front at substrate forms the front doped layer;
Form front side conductive layer on the surface of described front doped layer away from substrate one side.
5. manufacture method according to claim 4, it is characterized in that, the formation technique of described backside passivation layer, back side doped layer, backside conductive layer, backplate layer, front passivation layer, front doped layer and front side conductive layer is identical or different, and described formation technique is chemical vapor deposition or physical vapor deposition.
6. manufacture method according to claim 1, it is characterized in that, described in described via hole the filled conductive material, and form front gate line in substrate face, the process that forms the contact zone in the zone that substrate back is not covered by back side doped layer, backside conductive layer and backplate layer is, adopt silk-screen printing technique filled conductive material in described via hole, and at substrate face printing front gate line, in the printing contact zone, zone that substrate back is not covered by back side doped layer, backside conductive layer and backplate layer.
7. slide glass boat, be applied to the described manufacture method of claim 1～6 any one, it is characterized in that, at least one mask sheet that described slide glass boat comprises frame, be positioned at the zone that described frame surrounds reaches the supporting construction that is connected with frame with described mask sheet;
The area of the substrate back that described mask sheet covers is greater than the area of the shared substrate back of described via hole, and described mask sheet is used for blocking fully the via hole of described substrate back.
8. slide glass boat according to claim 7, is characterized in that, described mask sheet is circular.
9. slide glass boat according to claim 8, is characterized in that, the supporting construction of described slide glass boat comprises that many bar shapeds reticulate the Support Level of structure, and described mask sheet is positioned at the intersection point place of described Support Level.
10. a heterojunction MWT battery, is characterized in that, comprising:
Substrate, the front passivation layer of the described substrate face of covering, the backside passivation layer of the described substrate back of covering, at least one runs through the via hole of described substrate, front passivation layer and backside passivation layer;
Be located at the back side doped layer of described substrate back, be located at the lip-deep backside conductive layer of described back side doped layer away from substrate one side, be located at the lip-deep backplate layer of described backside conductive layer away from substrate one side;
Be positioned at the electric conducting material of described via hole, be positioned at the front gate line of substrate face, be positioned at substrate back not by the contact zone on the zone of back side doped layer, backside conductive layer and the covering of backplate layer, described front gate line is electrical connected by the electric conducting material in described via hole and described contact zone, and described contact zone and described back side doped layer, backside conductive layer and backplate layer are electrically insulated.
11. heterojunction MWT battery according to claim 10 is characterized in that, also comprises:
Cover the front doped layer of substrate face;
Cover the lip-deep front side conductive layer of described front doped layer away from substrate one side.
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| CN107946382A (en) * | 2017-11-16 | 2018-04-20 | 南京日托光伏科技股份有限公司 | Solar cell that MWT is combined with HIT and preparation method thereof |
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| CN108305916A (en) * | 2018-03-05 | 2018-07-20 | 通威太阳能（成都）有限公司 | A kind of MWT battery manufacture craft based on plating masking diaphragm plate |
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| JP2019102794A (en) * | 2017-12-05 | 2019-06-24 | 君泰創新（北京）科技有限公司Ｂｅｉｊｉｎｇ Ｊｕｎｔａｉ Ｉｎｎｏｖａｔｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ | Solar cell sheet and preparation method thereof, solar cell string and photovoltaic cell assembly |
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