CN104300019B - Solar cell, module thereof and manufacturing method thereof - Google Patents
Solar cell, module thereof and manufacturing method thereof Download PDFInfo
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- CN104300019B CN104300019B CN201310373804.1A CN201310373804A CN104300019B CN 104300019 B CN104300019 B CN 104300019B CN 201310373804 A CN201310373804 A CN 201310373804A CN 104300019 B CN104300019 B CN 104300019B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 238000002161 passivation Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005684 electric field Effects 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 50
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 description 22
- 238000005245 sintering Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910000632 Alusil Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar cell, a module thereof and a manufacturing method thereof are provided, the solar cell comprises: a substrate, a passivation layer, a bus electrode, and a plurality of linear back electrodes. The substrate is provided with a light receiving surface and a back surface which are opposite to each other, and a back surface electric field connecting part which is positioned on the back surface side. The bus electrode is located on the back surface and includes a plurality of spaced segment-shaped conductive portions. The back surface electric field connection portion is located between at least two adjacent segment-shaped conductive portions. The plurality of linear back electrodes respectively cover the plurality of linear openings of the passivation layer correspondingly. The plurality of linear back electrodes are coated only at the positions corresponding to the plurality of linear openings, not in the whole surface, so that the use amount of screen printing conductive paste can be effectively reduced, and the production cost of the battery can be reduced.
Description
Technical field
The present invention relates to a kind of solaode, its module and manufacture method thereof, particularly relate to a kind of silicon
Brilliant solaode, its module and manufacture method thereof.
Background technology
Refering to Fig. 1, Fig. 2, it is known that silicon wafer solaode mainly comprise: one has a contrary light
The substrate 91, one at face 911 and a back side 912 is positioned at the front electrode 92 on this sensitive surface 911, is positioned at this
Multiple local back surface fields (Local Back Surface Field is called for short LBSF) 93 at the back side 912, is with many
Individual alusil alloy structure 90, is positioned on this back side 912 and has the passivation layer 94, of multiple opening 941
Be positioned on this passivation layer 94 and can via the plurality of opening 941 contact this back side 912 back electrode 95 and
Multiple bus electrodes 96 being connected to this back electrode 95.
This passivation layer 94 is for filling up, reduce the surface defect of this substrate 91, and then reduces carrier at this base
Recombination rate at the back side 912 of plate 91, to promote the conversion efficiency of battery.The plurality of local back surface
The most corresponding the plurality of opening 941 of electric field 93 and be positioned at this back side 912, the load of local back surface field 93
Sub-concentration, more than the carrier concentration of this substrate 91, can help to promote carrier collection efficiency and opto-electronic conversion effect
Rate.This kind has the battery of passivation layer 94 and local back surface field 93 and is referred to as PERC battery (Passivated
Emitter and Rear Contact Solar Cell), it is not provided with passivation layer 94 and local back table compared to tradition
For the battery of face electric field 93, there is higher conversion efficiency.
The back electrode 95 of this battery is to utilize wire mark metal paste and sinter formation, but due to this back electrode 95
Coating on the back side 912 of this substrate 91 for whole property, cause metal paste consumption big, production cost is relatively
Height, so the structure of known battery and preparation method need to be improved.
Summary of the invention
It is an object of the invention to provide one to reduce production cost and good electric current collection can be maintained to imitate
Solaode, its module and the manufacture method thereof of energy.
Solaode of the present invention, comprises: a substrate and a front electrode, this substrate has phase
An anti-sensitive surface and a back side and an emitter layer being positioned at this sensitive surface side, this front is electric
Pole is positioned on this sensitive surface.This substrate also has a back surface electric field connecting portion being positioned at this rear side,
This solaode also comprise one be positioned on this back side and have the passivation layer of multiple wire opening, one
It is positioned on this back side and includes that the bus electrode of section shape conductive part at multiple interval and multiple correspondence respectively are covered
It is placed on the wire back electrode on the plurality of wire opening；This back surface electric field connecting portion is adjacent at least two
The plurality of section of shape conductive part between, the resistivity of the material of the plurality of wire back electrode be more than this electricity that confluxes
The resistivity of the material of pole.
Solaode of the present invention, at least two adjacent wire back electrodes are to carry on the back with the plurality of wire
Multiple connection electrodes of the identical material of electrode connect, and the back side of the plurality of connection electrode and this substrate is by this
Passivation layer separates.
Solaode of the present invention, the plurality of wire opening of this passivation layer is along a first direction
Extending and be spaced along a second direction being different from this first direction, this of this bus electrode is many
Individual section shape conductive part is spaced along this second direction.
Solaode of the present invention, this passivation layer also has one to connecting by back surface electric field
The connection opening of the position in portion.
Solaode of the present invention, each wire back electrode extends along a first direction, each
Wire back electrode has two and extends along this first direction and relative edge, the material of each wire back electrode
Matter comprises aluminum and silicon, and the silicone content of the described edge of each wire back electrode is less than 12.6%.
Solaode module of the present invention, comprises: first sheet material being oppositely arranged and second plate
Material and an encapsulation material between this first sheet material and this second sheet material.This solaode module
Also comprise multiple being arranged between this first sheet material and this second sheet material and solaode described above,
This encapsulation material is coated on around described solaode.
The manufacture method of solaode of the present invention, comprises: preparing a substrate, this substrate has on the contrary
A sensitive surface and a back side, and be formed with an emitter layer in this sensitive surface side；At this sensitive surface
Upper formation one front electrode.The manufacture method of this solaode also comprises: form one on this back side
There is the passivation layer of multiple opening；And on this passivation layer, form a current collection layer, and make this current collection layer
This back side is connected via the plurality of opening of this passivation layer.The forming method of this current collection layer includes: with net
India side formula is formed separately on this back side and is covered each by multiple first conducting resinl figures of the plurality of opening
Case and formed multiple between the plurality of first conducting resinl pattern and with the plurality of first conducting resinl
Second conducting resinl pattern of pattern spacing, each of which the second conducting resinl pattern and this back side are by this passivation layer
Separate；And carry out heat treatment and by the plurality of first conducting resinl pattern and the plurality of second conducting resinl figure
The material flowability of case, makes every two the first adjacent conducting resinl patterns can be via this two adjacent first conduction
At least one second conducting resinl pattern electrical connection between glue pattern.
The manufacture method of solaode of the present invention, between every two the first adjacent conducting resinl patterns
There are at least two the second conducting resinl patterns.
The manufacture method of solaode of the present invention, is positioned at every two the first adjacent conducting resinl patterns
Between these at least two the second conducting resinl patterns spacing each other identical.
The manufacture method of solaode of the present invention, adjacent first conducting resinl pattern and the second conduction
The spacing being smaller than adjacent two second conducting resinl patterns of glue pattern.
The manufacture method of solaode of the present invention, the thickness of the plurality of first conducting resinl pattern is big
Thickness in the plurality of second conducting resinl pattern.
The manufacture method of solaode of the present invention, the plurality of second conducting resinl pattern linearly prolongs
Stretch.
The manufacture method of solaode of the present invention, the plurality of first conducting resinl pattern and the plurality of
Opening linearly extends.
The manufacture method of solaode of the present invention, also includes: cover multiple on this back side
Every conflux conducting resinl pattern and via heat treatment to form a section shape conductive part with multiple interval
Bus electrode, wherein the resistivity of the material of this current collection layer is more than the resistivity of the material of this bus electrode.
The manufacture method of this solaode also forms one on this back side, and to be positioned at least two adjacent the plurality of
Back surface electric field connecting portion between section shape conductive part, forms the method bag of this back surface electric field connecting portion
Include: cover between conducting resinl pattern on this back side of this substrate and at least two adjacent the plurality of confluxing
One connects conducting resinl pattern；And it is treated with heat such that material and this base of this connection conducting resinl pattern
The material mixing of plate is to form this back surface electric field connecting portion.Wherein, this passivation layer also has a correspondence
The connection opening of the position of this back surface electric field connecting portion.
The beneficial effects of the present invention is: by the most corresponding the plurality of wire opening of the plurality of wire back electrode
Position and arrange, rather than in whole topcoating cloth, the consumption of wire mark electrocondution slurry, fall can be efficiently reduced
Low battery production cost.And the plurality of back surface electric field connecting portion has good conductive effect, Ke Yiyu
This bus electrode and wire back electrode cooperatively form perfect conductive net, have good electric current collection effect
Energy.And the plurality of first conducting resinl pattern that the manufacture method of the present invention is spaced by formation and the second conduction
Glue pattern, then formed this current collection layer of overall electric connection by the flow behavior of electrocondution slurry, so
Usage of sizing agent can be reduced equally and reduce production cost.
Accompanying drawing explanation
Fig. 1 is the schematic rear view of a kind of known solar cells；
Fig. 2 is the sectional view taken along the line A-A of Fig. 1；
Fig. 3 is the partial schematic sectional view of one first preferred embodiment of solaode module of the present invention；
Fig. 4 is the schematic rear view of a solaode of this first preferred embodiment, and the dotted line in figure shows
Multiple wire opening of anticipating is connected opening with multiple；
Fig. 5 is the sectional view taken along the line B-B of Fig. 4；
Fig. 6 is the sectional view taken along the line C-C of Fig. 4；
Fig. 7 is the sectional view taken along the line D-D of Fig. 4；
Fig. 8 is the schematic diagram of the subelement of this first preferred embodiment, being somebody's turn to do of main display one passivation layer
Multiple wire openings be connected opening；
Fig. 9 is the back of the body of a solaode of one second preferred embodiment of solaode module of the present invention
Face schematic diagram；
Figure 10 is the sectional view taken along the E-E line of Fig. 9；
Figure 11 is that the part steps flow process of the manufacture method of the solaode of this second preferred embodiment is shown
Being intended to, the section view position of Figure 11 is along the F-F line of Fig. 9, and shows and form multiple remittance at the back side of a substrate
Stream conducting resinl pattern, and after heat treatment form multiple bus electrode；
Figure 12 is that the part steps flow process of the manufacture method of the solaode of this second preferred embodiment is shown
Being intended to, the section view position of Figure 12 is along the E-E line of Fig. 9, and shows and form multiple the at the back side of this substrate
One conducting resinl pattern and multiple second conducting resinl patterns, and after heat treatment formed multiple first protuberance with
Multiple second protuberances；
Figure 13 is the schematic diagram of a half tone, and this half tone forms a collection of this second preferred embodiment for wire mark
Electric layer；
Figure 14 is a schematic flow sheet, shows one the 3rd preferred embodiment of solaode module of the present invention
The part steps of manufacture method of a solaode；
Figure 15 is the schematic diagram of a half tone, and this half tone forms a collection of the 3rd preferred embodiment for wire mark
Electric layer；
Figure 16 is a solaode of one the 4th preferred embodiment of solaode module of the present invention
Schematic rear view；
Figure 17 is a schematic flow sheet, shows the manufacture method of the solaode of the 4th preferred embodiment
Part steps, the section view position of Figure 17 is along the G-G line of Figure 16.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment the present invention is described in detail, it is noted that, following
In description, similar element is to be identically numbered to represent.
Refering to Fig. 3, Fig. 4, one first preferred embodiment of solaode module of the present invention comprises: up and down
One first sheet material 1 being oppositely arranged and one second sheet material 2, multiple array be arranged in this first sheet material 1 with
Solaode 3 and at least one between this second sheet material 2 is positioned at this first sheet material 1 and this second sheet material 2
Between, and it is coated on the encapsulation material 4 around the plurality of solaode 3.
This first sheet material 1 is not particularly limited on the implementation with this second sheet material 2, it is possible to use glass or mould
Offset plate material, and the sheet material being positioned at the side of battery sensitive surface is necessary for light-permeable.The material of this encapsulation material 4
The ethylene-vinyl acetate copolymer (EVA) of matter for example, light-permeable, or other can be used for solaode mould
The associated materials of group encapsulation.
The plurality of solaode 3 is electrically connected by not shown welding wire (ribbon).The plurality of too
The structure of sun energy battery 3 is the most identical, the most only illustrates as a example by one of them.But at a module
In multiple batteries be not all imperative mutually with structure.
Refering to Fig. 4 to Fig. 8, this solaode 3 comprises: substrate 31, front electrode 32, is blunt
Change layer 33, multiple bus electrode 34, multiple wire back electrode 35 and multiple connection electrode 36.
This substrate 31 has a contrary sensitive surface 311 and a back side 312 and one is positioned at this sensitive surface
The emitter layer 313 of the inner side at 311, this emitter layer 313 can arrange an anti-reflecting layer 314.Wherein, should
Substrate 31 such as silicon substrate 31, and this substrate 31 is n-type semiconductor with in this emitter layer 313, separately
One is p-type semiconductor, and then forms p-n junction.The material of this anti-reflecting layer 314 such as silicon nitride
(SiNx), can be used for reducing luminous reflectance, to improve light amount.
Additionally, this substrate 31 also has multiple multiple local backs being spaced and be positioned at this side, back side 312
Surface field (Local Back Surface Field is called for short LBSF) 315 is connected with multiple back surface electric fields
Portion 316.Wherein, the carrier concentration of local back surface field 315, can more than the carrier concentration of this substrate 31
Helping to promote carrier collection efficiency and photoelectric transformation efficiency, the material of local back surface field 315 is for example,
Adulterate in aluminum silicon compound, mainly silicon the aluminum (aluminum content is about about 1%) of trace.
Supplementary notes, the plurality of local back surface field 315 of the present embodiment and the plurality of back surface
The position one_to_one corresponding of electric field connecting portion 316, and local back surface field 315 is relative to back surface electric field even
Connect the inside of portion 316 this substrate 31 closer.Said structure relativeness is relevant with its production method, but
The structure of the present invention is not limited to this, and follow-up meeting is described.
This front electrode 32 is positioned on the sensitive surface 311 of this substrate 31, and with this bus electrode 34 and these are many
Individual wire back electrode 35 coordinates output electric energy, but due to the improvement emphasis of this front electrode 32 non-invention,
So no longer illustrating.
This passivation layer 33 is positioned on this back side 312, for filling up, reduce the surface defect of this substrate 31,
And then reduce carrier recombination rate at this back side 312, the open-circuit voltage of battery, short circuit electricity can be promoted
Stream and conversion efficiency.The material of this passivation layer 33 such as oxide, nitride, or oxide and nitride
Deng composite.This passivation layer 33 has multiple wire opening 331 and multiple connection opening 332, and these are many
Individual wire opening 331 extends along a first direction 51 and along a second party being different from this first direction 51
It is spaced to 52, second direction 52 this first direction 51 vertical of the present embodiment, and the plurality of wire is opened
Several back surface electric field connecting portions 316 in mouth 331 corresponding multiple back surface electric field connecting portions 316 respectively
Position.The plurality of connection opening 332 separately and distinguishes corresponding other several back surface electric field connecting portions 316
Position, each connection opening 332 of the present embodiment extends along this second direction 52.
The quantity of the bus electrode 34 of the present embodiment is three, and is positioned on this back side 312.Each remittance
Stream electrode 34 includes multiple extension and spaced section of shape conductive part 341 along this second direction 52.Each
There is between any two section of shape conductive part 341 in bus electrode 34 a described back surface electric field connecting portion
316 and one to should the extension electrode 38 of back surface electric field connecting portion 316, the width of extension electrode 38 is little
Width in section shape conductive part 341.But the position of the back surface electric field connecting portion 316 of the present invention is not limited to only
Between wantonly two sections of shape conductive parts 341.It should be noted that and when the present invention implements, can only arrange one
Individual bus electrode 34, as long as and arranging a back surface electricity between two of which adjacent segment shape conductive part 341
Field connecting portion 316.Supplementary notes, described " section shape " word, it is intended to indicate that each remittance
Stream electrode 34 is to be made up of the conductive part at multiple intervals, and the strip of the continuous integral type of non-exhibiting, because of
This described section of shape is not used in the shape limiting conductive part, the plurality of section of shape conductive part 341 can be square,
Circular or other are variously-shaped.
Bus electrode 34 available silver slurry wire mark is formed, and therefore its main material is silver, and the present embodiment
Each bus electrode 34 uses the consumption that break line type structure can reduce wire mark slurry, contributes to reduction and produces into
This.But in time implementing, each bus electrode 34 of the present invention still can use the strip of continuous integral type
Structure.
The plurality of wire back electrode 35 is positioned at the back side 312 of this substrate 31, and respectively correspondence to be covered in this many
On individual wire opening 331, the bearing of trend of the most the plurality of wire back electrode 35 and the plurality of wire opening
The bearing of trend of 331 is identical, all extends along this first direction 51.Wherein there is the wire back electrode 35 of part
It is connected with at least one bus electrode 34 or at least one back surface electric field connecting portion 316, to form conduction
Networking.The plurality of wire back electrode 35 may utilize aluminium paste wire mark and formed, and therefore its main material is aluminum.Should
The resistivity of the material of multiple wire back electrodes 35 is more than the resistivity of the material of the plurality of bus electrode 34.
Additionally, due to the material of this substrate 31 (silicon) can be diffused in each wire back electrode 35 from this back side 312,
The material of the most each wire back electrode 35 is likely to comprise silicon.
It is preferred that the width w1 of each wire back electrode 35 is more than the width w2 of each wire opening 331,
Make each wire back electrode 35 that corresponding this wire opening 331 can be completely covered, and wire back electrode
The part of 35 is positioned on this passivation layer 33 surface.Additionally, each wire back electrode 35 has two edges
This first direction 51 extends and along the relative edge 351 of this second direction 52, it is preferred that each wire back of the body
The silicone content at the position, described edge 351 of electrode 35 be less than 12.6%, 12.6% for Si be dissolved in Al saturated
Concentration value.The reason that above-mentioned wire back electrode 35 width limits with silicone content limits is as follows: owing to these are many
When individual wire back electrode 35 makes, it is that to utilize wire mark mode that electrocondution slurry (such as aluminium paste) is coated this blunt
Changing on layer 33, the electrocondution slurry of part can flow and insert in the plurality of wire opening 331, follow-up via height
Temperature sintering (firing) can make electrocondution slurry curing molding be the plurality of wire back electrode 35.And sintered
Cheng Zhong, the material (aluminum) of electrocondution slurry can contact the back side of this substrate 31 via the plurality of wire opening 331
312, and mix with the material (silicon) of this substrate 31, and then form local back surface field 315 and the back of the body in the lump
Surface field connecting portion 316.Therefore when the width of wire back electrode 35 and material are enough so that at wire mark
With in sintering process, have enough aluminum can with the pasc reaction of this substrate 31, with guarantee to produce this is many
The back surface electric field connecting portion 316 of individual alusil alloy has good quality and electric conductivity, and back surface
The resistivity of electric field connecting portion 316 is less than the resistivity of local back surface field 315, again smaller than wire back of the body electricity
The resistivity of pole 35, back surface electric field connecting portion 316 has good conductive effectiveness, thus can promote electricity
Stream collection efficiency.Additionally, extension electrode 38 can become with same secondary net impression with wire back electrode 35, prolong
Stretching electrode 38 material can be many to be formed with substrate 31 material mixing via connection opening 332 when sintering
Several back surface electric field connecting portions 316 in individual back surface electric field connecting portion 316 and local back surface field
315。
The plurality of connection electrode 36 of the present embodiment is positioned on this passivation layer 33 at each interval, the plurality of company
Receiving electrode 36 is separated by this passivation layer 33 with the back side 312 of this substrate 31.The present embodiment wantonly two adjacent
All it is connected with multiple connection electrodes 36 between wire back electrode 35, and the material of the plurality of connection electrode 36
Identical with the material of the plurality of wire back electrode 35, and same screen printing processing shape together can be utilized
Become.Connect wire back electrode 35 by connecting electrode 36, perfect conductive net can be formed, to promote
Current collection efficiency and photoelectric transformation efficiency.But when the present invention implements, not to arrange connection electrode 36 for must
Want, or when arranging connection electrode 36, as long as the adjacent wire back electrode 35 of at least a part of which two is to connect
Electrode 36 connects, and is not all connected for definitely must by connection electrode 36 with all of wire back electrode 35
Want, be also not required to limit allocation position and the quantity connecting electrode 36.
In sum, the battery back electrode of the present invention is not in whole topcoating cloth, but the plurality of wire is carried on the back
The position of the corresponding the plurality of wire opening 331 of electrode 35 and arrange, wire mark conductive paste can be efficiently reduced
The consumption of material, and then reduce battery production cost.Each bus electrode 34 includes that the section shape at multiple interval is led
Electricity portion 341 and in broken string shape, replace known integral type strip bus electrode 34, can reduce equally and lead
Electricity usage of sizing agent and reduction production cost.And the plurality of back surface electric field connecting portion 316 is positioned at adjacent two sections
Between shape conductive part 341, good conductive effect can be produced, add the plurality of connection electrode 36 and formed
Perfect conductive net, therefore the present invention is while reducing production cost, moreover it is possible to make backplate have
Good electric current collection usefulness.
Refering to Fig. 9, Figure 10, Figure 11, the second preferred embodiment of solaode module of the present invention with should
The structure of the first preferred embodiment is roughly the same, the place that main explanation is different below.
The solaode 3 of the present embodiment comprises: substrate 31, front electrode 32, passivation layer 33,
Multiple bus electrodes 34 and a current collection layer 37.The substrate 31 of the present embodiment and front electrode 32 structure with
This first preferred embodiment is identical, no longer illustrates.
This passivation layer 33 is positioned on this back side 312, and has and multiple extend and edge along this first direction 51
This spaced opening of second direction 52 333, the opening 333 of the present embodiment is strip wire, but does not limits
In this.
The plurality of bus electrode 34 is all the continuous strip of integral type, the plurality of bus electrode 34 along this second
Direction 52 extends and is spaced along this first direction 51, can also only arrange the electricity that confluxes during enforcement
Pole 34.
This current collection layer 37 is positioned on this passivation layer 33 and corresponding to this back side 312 almost in whole configuration,
And the back side 312 of this substrate 31 can be connected via the plurality of opening 333 of this passivation layer 33.This current collection layer
37 connect the plurality of bus electrode 34.The resistivity of the material (such as aluminum) of this current collection layer 37 is more than the plurality of
The resistivity of the material (such as silver) of bus electrode 34.
This current collection layer 37 includes multiple the first protuberance being spaced and being covered each by the plurality of opening 333
371 and multiple the second protuberance 372 between the plurality of first protuberance 371, and each
Second protuberance 372 is separated by this passivation layer 33 with this back side 312.The plurality of the first of the present embodiment highlights
Portion 371, the plurality of second protuberance 372 are all to prolong along this first direction 51 straight line with the plurality of opening 333
Stretch.The thickness t1 of the plurality of first protuberance 371 is more than the thickness t2 of the plurality of second protuberance 372, institute
Stating thickness t1, t2 is all that the surface away from this substrate 31 from this passivation layer 33 is started at.
The quantity of the second protuberance 372 between every two first adjacent protuberances 371 of the present embodiment is all
For multiple, but when implementing, the quantity of the second protuberance 372 between every two the first adjacent protuberances 371
Can also be one or at least two.
Multiple local back surface fields 315 of the present embodiment are with multiple back surface electric field connecting portions 316 respectively
The position of corresponding the plurality of opening 333.
Refering to Fig. 9, Figure 11, Figure 12, the manufacture method of the solaode of the present embodiment comprises following step
Rapid:
Step one: prepare this substrate 31 that there is this contrary sensitive surface 311 with this back side 312, and can profit
Form this emitter layer 313 by diffusion process in this sensitive surface 311 side, be additionally also with vacuum coating mode
This anti-reflecting layer 314 is formed on this emitter layer 313.Vacuum coating mode of the present invention comprises physics
The modes such as vapour deposition (PVD), chemical gaseous phase deposition (CVD), described chemical gaseous phase deposition comprises
PECVD。
Step 2: form this front electrode 32 on this sensitive surface 311.This step can be by wire mark mode
The electrocondution slurry of this front electrode 32 of coating on this anti-reflecting layer 314, then carries out high temperature sintering, should
Electrocondution slurry can corrode and pass this anti-reflecting layer 314 and contact this emitter layer 313, when electrocondution slurry solidifies
After be formed for this front electrode 32.
Step 3: form this passivation layer 33 on this back side 312, this step may utilize vacuum coating mode
Prior to forming continuous whole passivation layer 33 thin film on this back side 312, carry out perforate system then at precalculated position
Journey is to form the plurality of opening 333 of this passivation layer 33, and then makes opening corresponding to the plurality of of this back side 312
The position of mouth 333 is exposed.Wherein, this perforate processing procedure can utilize laser ablation, etching glue (etching paste)
Or the mode such as Wet-type etching is carried out.Supplementary notes, the plurality of remittance of predetermined molding on this passivation layer 33
The position of stream electrode 34, it is also possible to arranging hole can be via with the plurality of bus electrode 34 that is subsequently formed of order
These holes contact this back side 312 but it also may be not provided with hole and make the plurality of bus electrode 34 and be somebody's turn to do
Separate with this passivation layer 33 between the back side 312.
Step 4: form the plurality of bus electrode 34 and this current collection layer 37 on this passivation layer 33, and make this
Current collection layer 37 connects this back side 312 via the plurality of opening 333 of this passivation layer 33.The plurality of electricity that confluxes
The forming method of pole 34 includes: cover electrocondution slurry (the such as silver of bus electrode 34 on this back side 312
Slurry), to form the conducting resinl pattern 60 (Figure 11) that confluxes at multiple interval and many to form this via heat treatment
Individual bus electrode 34.Described heat treatment is the most tentatively to toast, then makes electrocondution slurry solid with sintering process
Change and form the plurality of bus electrode 34, and sinter form the processing procedure of the plurality of bus electrode 34 can be with sintering
The processing procedure forming this current collection layer 37 is carried out together.
The forming method of this current collection layer 37 includes: be coated with current collection layer 37 on this back side 312 in wire mark mode
Electrocondution slurry (such as aluminium paste), to be formed separately and be covered each by multiple the first of the plurality of opening 333
Conducting resinl pattern 61 and form multiple second conducting resinl pattern 62,62, the plurality of second conducting resinl pattern
Between the plurality of first conducting resinl pattern 61 and and the plurality of first conducting resinl pattern 61 be spaced, and
Each second conducting resinl pattern 62 is separated by this passivation layer 33 with this back side 312.It should be noted that it is every
The quantity of the second conducting resinl pattern 62 between two the first adjacent conducting resinl patterns 61 can be one, two
Individual or more, the thickness t3 of the plurality of first conducting resinl pattern 61 is more than the plurality of second conducting resinl pattern
The thickness t4 of 62, described thickness t3, t4 are that the surface away from this substrate 31 from this passivation layer 33 is started at.
The plurality of first conducting resinl pattern 61 extends over along the plurality of opening 333 respectively, and the plurality of first leads
Electricity glue pattern 61, the plurality of second conducting resinl pattern 62 and the plurality of opening 333 are all along this first direction 51
Straight-line extension.
Then heat treatment (preliminary baking and follow-up sintering process can be comprised) can be by the plurality of the is carried out
One conducting resinl pattern 61 and the material flowability of the plurality of second conducting resinl pattern 62, make the most separately
First conducting resinl pattern 61 flows with the material of the second conducting resinl pattern 62 and is connected, and then makes every two adjacent
The first conducting resinl pattern 61 can be via at least one between this two first adjacent conducting resinl pattern 61
Two conducting resinl patterns 62 electrically connect.After heat treatment processing procedure, the plurality of first conducting resinl pattern 61 is many with this
Individual second conducting resinl pattern 62, owing to material flowing connects the plurality of the of this current collection layer 37 of curing molding
One protuberance 371 and the plurality of second protuberance 372.After sintering process, due to the material of this current collection layer 37
Material (aluminum) mixes with the material (silicon) of this substrate 31, the plurality of local back surface field 315 and back surface electric field
Connecting portion 316 is formed the most in the lump.
Supplementary notes, can have at least two between every two first adjacent conducting resinl patterns 61 of the present embodiment
Individual second conducting resinl pattern 62.These at least two be positioned between every two the first adjacent conducting resinl patterns 61
Two conducting resinl patterns 62 spacing d1 each other, d2 can be identical or different.Additionally, this current collection layer 37
A wire mark can be utilized to carry out with the wire mark step of the plurality of bus electrode 34, it is also possible to be divided into two simultaneously
Secondary, when being divided into twice, it is not necessary to limit the sequencing of wire mark.
Refering to Fig. 9, Figure 12, Figure 13, Figure 13 shows the half tone 7 forming this current collection layer 37 for wire mark
Structure, mainly comprises the barrier layer that a screen cloth (not shown) and is incorporated on this screen cloth and patterns
71, this barrier layer 71 has multiple stop part 712 extended along this first direction 51, adjacent stop part
First perforation 713 at multiple interval and multiple between adjacent first perforation 713 is formed between 712
Second perforation 714, the plurality of first perforation 713 width w3 more than the plurality of second perforation 714 width
Degree w4, therefore when this current collection layer 37 of wire mark, just can be formed by the slurry of the plurality of first perforation 713
The plurality of first conducting resinl pattern 61, just can be formed the plurality of by the slurry of the plurality of second perforation 714
Second conducting resinl pattern 62, and the first conducting resinl pattern 61 and the second conducting resinl pattern 62 are along this first direction
51 linearly extended forms are i.e. analogous respectively to the first perforation 713 and straight-line extension shape of the second perforation 714
State.And because the width w3 of the first perforation 713 is relatively big, the more electrocondution slurry of tolerable passes through, and enters
And make the thickness of the first conducting resinl pattern 61 that wire mark goes out and width be both greater than the second conducting resinl pattern 62
Thickness and width, and sinter the thickness of the first protuberance 371 of formation naturally also more than the second protuberance 372
Thickness.And by the spacing between the first perforation 713 and the proper width of the second perforation 714, perforation
Suitably and slurry has the features such as mobility, this current collection layer 37 made is made can to connect integral.
In sum, owing to the present embodiment coordinates special half tone 7 to design, the plurality of stop part 712 has
Barrier effect, therefore can reduce electrocondution slurry consumption.The current collection layer 37 of the present embodiment away from this substrate 31
Surface non-smooth, relative to conventional batteries back electrode entirety substantially uniform thickness (conventional batteries
Back electrode thickness is equivalent to the thickness of the first protuberance 371) for, really reduce electrocondution slurry consumption and drop
Low production cost.And can lead to again between the plurality of first protuberance 371 of this current collection layer 37 at the same time
Cross the plurality of second protuberance 372 to be electrically connected with, make this current collection layer 37 entirety still be formed in the way of whole
On the back side 312 of this substrate 31, there is good conductive effectiveness and electric current collection effect.And because
This current collection layer 37 surface is non-smooth and can increase surface area, when so can promote follow-up assembling module, and electricity
Combination pulling force between pond and encapsulation material (EVA).
Refering to Figure 14, the 3rd preferred embodiment of solaode module of the present invention second is preferably implemented with this
The structure of example is roughly the same, and different places is, the present embodiment is in manufacturing process, and wire mark is formed
Spacing d3 of adjacent first conducting resinl pattern 61 and the second conducting resinl pattern 62 is less than adjacent two second conductions
Spacing d4 of glue pattern 62 or d4 '.Effect of the present embodiment is: adjacent first conducting resinl pattern 61 He
Spacing d3 of the second conducting resinl pattern 62 is less, then, during wire mark, can pass through the second conducting resinl figure
Case 62 forms lateral bracing force to the first conducting resinl pattern 61 so that by described first conducting resinl pattern
61 described first protuberances 371 formed have enough prominent thickness.The sun that the present embodiment is produced
Adjacent first protuberance 371 of the current collection layer 37 of energy battery 3 and the second protuberance 372 lean on relatively near and are formed
Local is overlapping.
Refering to Figure 14, Figure 15, Figure 15 is for forming the half tone 7 that the current collection layer 37 of the present embodiment is used,
It is slightly different with the half tone of this second preferred embodiment, the phase on the barrier layer 71 of the half tone 7 of the present embodiment
Spacing d5 of adjacent first perforation 713 and the second perforation 714 less than adjacent two second perforation 714 spacing d6 or
d6’。
Refering to Figure 16, Figure 17, the 4th preferred embodiment of solaode module of the present invention is with this second relatively
The structure of good embodiment is roughly the same, and different places is, the solaode 3 of the present embodiment every
One bus electrode 34 includes multiple extension and spaced section of shape conductive part 341 along this second direction 52.
This passivation layer 33, in addition to having the plurality of opening 333, also has and multiple lays respectively at adjacent two sections of shapes
Connection opening 332 between conductive part 341.And the local back surface field 315 of this substrate 31 and back surface
The corresponding the plurality of opening 333 of electric field connecting portion 316 and the position of the plurality of connection opening 332.During enforcement,
This passivation layer 33 can also only have the company of a correspondence wherein position of a back surface electric field connecting portion 316
Connect opening 332.
The manufacture method of the present embodiment mainly covers the conducting resinl that confluxes at multiple interval on this back side 312
Pattern 60, and conflux to form the plurality of of section shape conductive part 341 with multiple interval via heat treatment
Electrode 34.
The manufacture method of the present embodiment also forms one on this back side 312, and to be positioned at least two adjacent the plurality of
Back surface electric field connecting portion 316 between section shape conductive part 341, described " at least two adjacent the plurality of section
Shape conductive part 341 " refer to the section shape conductive part 341 in same bus electrode 34.And form this back surface
The method of electric field connecting portion 316 includes: lead on this back side 312 and at least two adjacent the plurality of confluxing
Cover a connection conducting resinl pattern 63 between electricity glue pattern 60, carry out heat treatment (can comprise preliminary baking with
Sintering process) to form this back surface electric field connecting portion 316, and form this back surface electric field connecting portion
The heat treatment carried out needed for 316 can with form the heat treatment carried out needed for the plurality of section of shape conductive part 341
Carry out together, therefore via heat treatment after, this back surface electric field connecting portion 316 will be positioned at the most biphase
Between adjacent section shape conductive part 341.Specifically, the material of this connection conducting resinl pattern 63 and this current collection
The electrocondution slurry material of layer 37 is identical, and is covered on this passivation layer 33 with same screen printing processing,
During sintering, connect conducting resinl pattern 63 material by the connection opening 332 of this passivation layer 33 with this base
The material mixing of plate 31, and then local back surface field 315 and back surface electric field connecting portion 316 can be formed.
The foregoing is only present pre-ferred embodiments, so it is not limited to the scope of the present invention, appoints
What person familiar with this technology, without departing from the spirit and scope of the present invention, can do on this basis
Further improving and change, therefore protection scope of the present invention is when with following claims institute circle
Fixed in the range of standard.
Claims (14)
1. a solaode, comprises: a substrate and a front electrode, this substrate has
A contrary sensitive surface and a back side and an emitter layer being positioned at this sensitive surface side, this front
Electrode is positioned on this sensitive surface, it is characterised in that this substrate also has a back of the body table being positioned at this rear side
Face electric field connecting portion, this solaode also comprises one and is positioned on this back side and has multiple wire opening
Passivation layer, one be positioned on this back side and include interval multiple sections of shape conductive parts bus electrode and
The corresponding multiple wire back electrodes being covered on the plurality of wire opening, wherein have the plurality of of part respectively
Wire back electrode is connected with this bus electrode or this back surface electric field connecting portion；This back surface electric field connecting portion
Between at least two the plurality of section of adjacent shape conductive parts, the resistance of the material of the plurality of wire back electrode
Rate is more than the resistivity of the material of this bus electrode.
2. solaode as claimed in claim 1, it is characterised in that at least two adjacent wire back ofs the body
Electrode connects with the multiple connection electrodes with the plurality of identical material of wire back electrode, and the plurality of connection electricity
Pole is separated by this passivation layer with the back side of this substrate.
3. solaode as claimed in claim 2, it is characterised in that the plurality of line of this passivation layer
Shape opening extends and along a second direction interval being different from this first direction along a first direction
Arrangement, the plurality of section of shape conductive part of this bus electrode is spaced along this second direction.
4. solaode as claimed in claim 1, it is characterised in that this passivation layer also has
To should the connection opening of position of back surface electric field connecting portion.
5. solaode as claimed in claim 1, it is characterised in that each wire back electrode is along
Individual first direction extends, and each wire back electrode has two and extends along this first direction and relative limit
Edge, the material of each wire back electrode comprises aluminum and silicon, the described edge of each wire back electrode
Silicone content is less than 12.6%.
6. a solaode module, comprises: first sheet material being oppositely arranged and one second
Sheet material and an encapsulation material between this first sheet material and this second sheet material, it is characterised in that should
Solaode module also comprises multiple being arranged between this first sheet material and this second sheet material and such as power
Profit requires the solaode described in claim any one of 1 to 5, and this encapsulation material is coated on the described sun
Around energy battery.
7. a manufacture method for solaode, comprises: preparing a substrate, this substrate has phase
An anti-sensitive surface and a back side, and it is formed with an emitter layer in this sensitive surface side；In this light
A front electrode is formed on face；It is characterized in that, the manufacture method of this solaode also comprises:
This back side is formed a passivation layer with multiple opening；And
This passivation layer is formed a current collection layer, and makes this current collection layer open via the plurality of of this passivation layer
Mouthful and connect this back side, the forming method of this current collection layer includes:
Formed separately on this back side in wire mark mode and be covered each by multiple the first of the plurality of opening
Conducting resinl pattern and formation are led between the plurality of first conducting resinl pattern and with the plurality of first
Multiple second conducting resinl patterns of electricity glue pattern spacing, each of which the second conducting resinl pattern and this back side quilt
This passivation layer separates；And
Carry out heat treatment and by the plurality of first conducting resinl pattern and the plurality of second conducting resinl pattern
Material flowability, makes every two the first adjacent conducting resinl patterns can be via this two the first adjacent conducting resinl figure
At least one between case the second conducting resinl pattern electrically connects.
8. the manufacture method of solaode as claimed in claim 7, it is characterised in that every two adjacent
The first conducting resinl pattern between have at least two the second conducting resinl patterns.
9. the manufacture method of solaode as claimed in claim 8, it is characterised in that be positioned at every two
The spacing phase each other of these at least two the second conducting resinl patterns between the first adjacent conducting resinl pattern
With.
10. the manufacture method of solaode as claimed in claim 8, it is characterised in that adjacent the
One conducting resinl pattern and the spacing being smaller than adjacent two second conducting resinl patterns of the second conducting resinl pattern.
The manufacture method of 11. solaodes as claimed in claim 7, it is characterised in that the plurality of
The thickness of the first conducting resinl pattern is more than the thickness of the plurality of second conducting resinl pattern.
The manufacture method of 12. solaodes as claimed in claim 7, it is characterised in that the plurality of
Second conducting resinl pattern linearly extends.
The manufacture method of the solaode as described in 13. claim any one of claim 7 to 12,
It is characterized in that, the plurality of first conducting resinl pattern and the plurality of opening linearly extend.
The manufacture method of 14. solaodes as claimed in claim 13, it is characterised in that also include
This back side covers interval multiple conflux conducting resinl pattern and via heat treatment with formed one have between
Every the bus electrode of multiple sections of shape conductive parts, wherein the resistivity of the material of this current collection layer is confluxed more than this
The resistivity of the material of electrode；
The manufacture method of this solaode also forms one on this back side and is positioned at least two adjacent being somebody's turn to do
Back surface electric field connecting portion between multiple sections of shape conductive parts, the method forming this back surface electric field connecting portion
Including: cover between conducting resinl pattern on this back side of this substrate and at least two adjacent the plurality of confluxing
Cover one and connect conducting resinl pattern；And be treated with heat such that the material of this connection conducting resinl pattern and be somebody's turn to do
The material mixing of substrate is to form this back surface electric field connecting portion；
Wherein, this passivation layer also has one to should the connection of position of back surface electric field connecting portion open
Mouthful.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102125229A TW201503393A (en) | 2013-07-15 | 2013-07-15 | Solar cell, module comprising the same and method of manufacturing the same |
| TW102125229 | 2013-07-15 |
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| CN104300019A CN104300019A (en) | 2015-01-21 |
| CN104300019B true CN104300019B (en) | 2016-08-17 |
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| TWI599054B (en) * | 2015-12-04 | 2017-09-11 | 茂迪股份有限公司 | Solar cell and screen plate of manufacturing the same |
| TWI587530B (en) * | 2016-08-24 | 2017-06-11 | 新日光能源科技股份有限公司 | Solar cell |
| TWI657590B (en) * | 2018-03-30 | 2019-04-21 | 友達光電股份有限公司 | Solar cell module |
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| US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
| CN202473940U (en) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | Rear-surface-passivated solar battery structure |
| CN202601626U (en) * | 2012-05-04 | 2012-12-12 | 浙江尖山光电股份有限公司 | Back electrode sectional-type solar cell |
| CN102891189A (en) * | 2011-07-22 | 2013-01-23 | 茂迪股份有限公司 | Solar batter with continuous back electric field layer and manufacturing method for solar battery |
| CN202957257U (en) * | 2012-11-08 | 2013-05-29 | 常州亿晶光电科技有限公司 | Solar cell and backside electrode structure thereof |
| CN103178132A (en) * | 2011-12-23 | 2013-06-26 | Lg电子株式会社 | Solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101621989B1 (en) * | 2011-01-27 | 2016-05-17 | 엘지전자 주식회사 | Solar cell panel |
-
2013
- 2013-07-15 TW TW102125229A patent/TW201503393A/en unknown
- 2013-08-23 CN CN201310373804.1A patent/CN104300019B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
| CN102891189A (en) * | 2011-07-22 | 2013-01-23 | 茂迪股份有限公司 | Solar batter with continuous back electric field layer and manufacturing method for solar battery |
| CN103178132A (en) * | 2011-12-23 | 2013-06-26 | Lg电子株式会社 | Solar cell |
| CN202473940U (en) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | Rear-surface-passivated solar battery structure |
| CN202601626U (en) * | 2012-05-04 | 2012-12-12 | 浙江尖山光电股份有限公司 | Back electrode sectional-type solar cell |
| CN202957257U (en) * | 2012-11-08 | 2013-05-29 | 常州亿晶光电科技有限公司 | Solar cell and backside electrode structure thereof |
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| CN104300019A (en) | 2015-01-21 |
| TW201503393A (en) | 2015-01-16 |
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