CN115148837A - Solar cell, preparation method thereof and photovoltaic module - Google Patents
Solar cell, preparation method thereof and photovoltaic module Download PDFInfo
- Publication number
- CN115148837A CN115148837A CN202210761068.6A CN202210761068A CN115148837A CN 115148837 A CN115148837 A CN 115148837A CN 202210761068 A CN202210761068 A CN 202210761068A CN 115148837 A CN115148837 A CN 115148837A
- Authority
- CN
- China
- Prior art keywords
- grid line
- semiconductor substrate
- slurry
- silver
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 121
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000002002 slurry Substances 0.000 claims abstract description 81
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052709 silver Inorganic materials 0.000 claims abstract description 70
- 239000004332 silver Substances 0.000 claims abstract description 70
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000007639 printing Methods 0.000 claims abstract description 42
- -1 silver-aluminum Chemical compound 0.000 claims abstract description 37
- 238000001465 metallisation Methods 0.000 claims abstract description 34
- 238000011282 treatment Methods 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 27
- 238000001035 drying Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 46
- 239000004411 aluminium Substances 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- SFXCACAILYNDQM-UHFFFAOYSA-N [Si]=O.[N].[C] Chemical compound [Si]=O.[N].[C] SFXCACAILYNDQM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application relates to the technical field of solar cells, in particular to a solar cell unit, a preparation method thereof and a photovoltaic module, wherein the preparation method comprises the following steps: providing a semiconductor substrate; carrying out metallization treatment on the semiconductor substrate by adopting the main grid line slurry to form a main grid line; carrying out metallization treatment on the semiconductor substrate by adopting secondary grid line slurry to form a secondary grid line; the main grid line slurry comprises silver paste, and the auxiliary grid line slurry comprises aluminum paste; the main grid line and the auxiliary grid line are provided with printing overlapping parts; at least one of the main grid line and the auxiliary grid line forms ohmic contact with the semiconductor substrate; and carrying out laser heat treatment on the printing overlapping part by adopting laser, and mixing the main grid line slurry and the auxiliary grid line slurry of the printing overlapping part to form the silver-aluminum slurry mixed grid line which forms ohmic contact with the semiconductor substrate. The solar cell unit prepared by the preparation method can solve the problem that a metallized grid line structure of the existing solar cell is high in cost.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method of the solar cell and a photovoltaic module.
Background
Solar energy is a clean, sustainable energy source. The solar cell generally comprises a semiconductor substrate and a metallized grid line structure arranged on the semiconductor substrate, wherein the metallized grid line structure plays an important role in leading out current and has important influence on the efficiency and the cost of the solar cell. At present, the material of metallization grid line structure is mainly silver, mainly because the resistivity of silver thick liquid is low, is fit for preparing into silver thick liquid and carries out screen printing, and can form better pulling force between silver and the semiconductor substrate, but, silver belongs to the noble metal, and the cost is higher, can increase solar cell's cost of manufacture like this.
Disclosure of Invention
The application provides a solar cell, a preparation method thereof and a photovoltaic module, which aim to solve the problem that the metallization grid line structure of the existing solar cell is high in cost.
According to a first aspect of the present application, there is provided a method of manufacturing a solar cell unit, comprising the steps of:
providing a semiconductor substrate;
carrying out metallization treatment on the semiconductor substrate by adopting main grid line slurry to form a main grid line; performing metallization treatment on the semiconductor substrate by adopting secondary grid line slurry to form a secondary grid line; the main grid line slurry comprises silver paste, and the auxiliary grid line slurry comprises aluminum paste; the main grid line and the auxiliary grid line are provided with printing overlapping parts; at least one of the main grid line and the auxiliary grid line forms ohmic contact with the semiconductor substrate;
and carrying out laser heat treatment on the printing overlapping part by adopting laser to mix the main grid line slurry and the auxiliary grid line slurry of the printing overlapping part so as to form a silver-aluminum slurry mixed grid line which forms ohmic contact with the semiconductor substrate.
In one possible design, the laser heat treatment conditions at least satisfy one of the following characteristics:
(1) Laser energy density of 10 3 W/cm 3 -10 5 W/cm 3 ；
(2) The laser pulse width is picosecond magnitude or nanosecond magnitude;
(3) The overlapping ratio of adjacent laser spots is more than 0.
In a possible design, the component proportion of the silver-aluminum paste mixed grid line is as follows: aluminum accounts for 38 +/-3%, silver accounts for 42 +/-3% and the rest accounts for 20 +/-3%.
In one possible design, the following steps are included:
and passivating the semiconductor substrate to form a passivation film on the semiconductor substrate.
In one possible design, the semiconductor substrate is metalized with a main grid line slurry to form a main grid line; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering main grid line slurry on the passivated semiconductor substrate to form a main grid line in ohmic contact with the semiconductor substrate;
and printing and drying the secondary grid line slurry on the passivated semiconductor substrate to form the secondary grid line.
In one possible design, the semiconductor substrate is metallized by using a main grid line slurry to form a main grid line; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering the passivated semiconductor substrate with the secondary grid line slurry, forming a secondary grid line which forms ohmic contact with the semiconductor substrate;
and printing and drying the main grid line slurry on the passivated semiconductor substrate to form the main grid line.
In one possible design, the length of the silver-aluminum paste mixed grid line is 20-500 μm.
In one possible design, the step of forming the sub-grid line by performing metallization processing on the semiconductor substrate by using sub-grid line slurry comprises the following steps:
carrying out metallization treatment on the semiconductor substrate by adopting first auxiliary grid line slurry to form a first auxiliary grid line;
carrying out metallization treatment on the semiconductor substrate by adopting second auxiliary grid line slurry to form a second auxiliary grid line;
the first auxiliary grid lines and the second auxiliary grid lines are alternately arranged at intervals along the length direction of the main grid lines; at least one of the first and second sub-gate line pastes includes an aluminum paste.
According to a second aspect of the present application, there is also provided a solar cell unit comprising:
a semiconductor substrate;
the plurality of main grid lines are arranged on the semiconductor substrate at intervals;
a plurality of sub-gate lines arranged on the semiconductor substrate at intervals along a length direction of the main gate line; wherein at least one of the main gate line and the sub-gate line forms an ohmic contact with the semiconductor substrate; the connection part of the auxiliary grid line and the main grid line is provided with a printing overlapping part;
the silver-aluminum paste mixed grid line is formed at the printing overlapping part; the silver-aluminum paste mixed grid line and the semiconductor substrate form ohmic contact.
In one possible design, the length of the silver-aluminum paste mixed grid line is 20-500 μm.
According to a third aspect of the present application, the present application further provides a solar cell module, which includes the above solar cell units, and the solar cell units are connected into a solar cell string in a whole or multi-piece manner.
The beneficial effect of this application:
the utility model provides a solar cell's preparation method handles the printing overlap portion that has between main grid line and the vice grid line through the mode that adopts laser heat treatment, make main grid line thick liquids and the even mixture of vice grid line thick liquids of printing overlap portion form the mixture that contains silver thick liquid and aluminium thick liquid, realize the electricity of silver thick liquid and aluminium thick liquid and connect, just so can realize that the aluminium thick liquid replaces partly silver thick liquid, in the overlap region of silver thick liquid and aluminium thick liquid, realize local mixing between them, thereby reduce monolithic battery's silver thick liquid consumption and cost, and simultaneously, avoided components such as aluminium in the aluminium thick liquid excessively to mix in the silver thick liquid of main grid line and lead to the nature of silver thick liquid to change by a wide margin, arouse that the electrical contact of silver thick liquid and semiconductor substrate takes place to worsen, for example, the penetrability reinforcing, contact resistivity increases etc.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a solar cell unit provided in the present application;
FIG. 2 is a schematic structural diagram of a solar cell unit provided by the present application in a first embodiment;
FIG. 3 is an enlarged view taken at I in FIG. 2;
fig. 4 is a schematic structural diagram of a solar cell unit provided by the present application in a second embodiment.
Reference numerals are as follows:
1-a semiconductor substrate;
2-main grid line;
3-secondary grid line;
31-a first secondary grid line;
32-a second set of gate lines;
and 4-silver-aluminum paste mixed grid lines.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Detailed Description
In order to better understand the technical solution of the present application, the following detailed description is made with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter associated objects are in an "or" relationship.
It should be noted that the directional terms such as "upper", "lower", "left", "right", etc. described in the embodiments of the present application are described in the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In addition, in this context, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on "or" under "the other element or be indirectly on" or "under" the other element through intervening elements.
The solar cell generally comprises a semiconductor substrate and a metallized grid line structure arranged on the semiconductor substrate, wherein the metallized grid line structure plays an important role in leading out current and has important influence on the efficiency and the cost of the solar cell. At present, the material of metallization grid line structure is mainly silver, mainly because the resistivity of silver thick liquid is low, is fit for preparing into silver thick liquid and carries out screen printing, and can form better pulling force between silver and the semiconductor substrate, but, silver belongs to the noble metal, and the cost is higher, can increase solar cell's cost of manufacture like this.
The existing photovoltaic manufacturers take the following measures in order to save the cost of the metallized grid line structure:
1. the components of the silver paste are improved to reduce the content of silver, but the silver content of the silver paste still exceeds 60 percent, and the cost is not reduced remarkably.
2. The screen pattern of the screen printing is optimized to reduce the silver paste consumption of the single-chip battery on the basis of not reducing the efficiency, but the bottleneck of the existing screen printing technology limits the optimization of the height and the width of the metal electrode.
3. The chemical plating or electroplating technology is adopted, nickel, copper and silver electrodes are adopted to replace silver paste electrodes, but the tension between the plated electrodes and silicon wafers is not enough, chemical liquid containing metal atoms is needed in the implementation process, the waste liquid treatment cost is high, the environment is not friendly enough, meanwhile, photoetching or laser equipment, chemical plating equipment or electroplating equipment is needed to be introduced to realize electrode patterns similar to silk-screen printing, and the equipment investment is large.
The problem of high preparation cost of the existing solar cell's metallized grid line structure is solved, and the applicant finds that partial mixing of silver paste and aluminum paste can be realized in the overlapping area of silver paste and aluminum paste by replacing a part of silver paste with the aluminum paste, so that the silver paste consumption and the cost of a single cell are reduced.
In view of the above, an embodiment of the present application provides a method for manufacturing a solar cell, where the solar cell may be an N-type cell, such as an N-type TOPCon (Tunnel Oxide Passivated Contact) cell, specifically, the solar cell may be an N-type double-sided cell, and a flowchart of the method for manufacturing the solar cell is shown in fig. 1, and specifically includes the following steps:
step (ii) of S1: a semiconductor substrate is provided. In some embodiments, the semiconductor substrate is a semiconductor silicon wafer, and the material of the semiconductor silicon wafer may be monocrystalline silicon, polycrystalline silicon, microcrystalline silicon, or the like.
Step S2: carrying out metallization treatment on the semiconductor substrate by adopting main grid line slurry to form a main grid line; performing metallization treatment on the semiconductor substrate by adopting secondary grid line slurry to form a secondary grid line; the main grid line slurry comprises silver paste, and the auxiliary grid line slurry comprises aluminum paste; the main grid line and the auxiliary grid line are provided with printing overlapping parts; at least one of the main gate line and the sub gate line forms ohmic contact with the semiconductor substrate. In some embodiments, the main gate line paste may be a silver paste, or may be a silver-aluminum mixed paste, and the sub gate line paste may be an aluminum paste, or may be a portion of the sub gate line paste of the sub gate line, and a portion of the sub gate line paste of the sub gate line is a silver paste.
The photovoltaic solar cell comprises a photovoltaic effect, a photovoltaic grid line, a main grid line, an auxiliary grid line, a main grid line and a solar cell, wherein the auxiliary grid line can collect current generated by the photovoltaic effect and conduct the current to the main grid line, the main grid line conducts the collected current, and the auxiliary grid line and the main grid line form a junction of solar cell electric energy. When at least one of the main grid line and the auxiliary grid line forms ohmic contact with the semiconductor substrate, the main grid line slurry or the auxiliary grid line slurry is placed at the position of the main grid line or the auxiliary grid line in a screen printing, ink-jet printing or laser transfer printing mode or a metal layer is deposited by adopting a PVD method.
And step S3: and carrying out laser heat treatment on the printing overlapping part by adopting laser, so that the main grid line slurry and the auxiliary grid line slurry of the printing overlapping part are mixed to form a silver-aluminum slurry mixed grid line which forms ohmic contact with the semiconductor substrate. The laser can realize a short-time heat treatment process in a local area, so that main grid line slurry and auxiliary grid line slurry at the printing overlapping part are uniformly mixed to form a mixture containing silver paste and aluminum paste, and the electrical connection of the silver paste and the aluminum paste is realized.
In the above-mentioned scheme, this application is handled the printing overlap portion that has between main grid line and the vice grid line through the mode that adopts laser heat treatment, make main grid line thick liquids and the even mixture of vice grid line thick liquids that the printing overlaps the portion form the mixture that contains silver thick liquid and aluminium thick liquid, realize the electricity connection of silver thick liquid and aluminium thick liquid, just so can realize that the aluminium thick liquid replaces partly silver thick liquid, in the overlap region of silver thick liquid and aluminium thick liquid, realize local mixture between them, thereby reduce the silver thick liquid consumption and the cost of monolithic battery, and simultaneously, avoided components such as aluminium in the aluminium thick liquid excessively to mix into the silver thick liquid of main grid line and lead to the nature of silver thick liquid to change by a wide margin, arouse that the electricity contact of silver thick liquid and semiconductor substrate takes place to worsen, for example, the penetrability reinforcing, contact resistivity increases etc.
In some embodiments, the laser heat treatment may have a laser fluence of 10 3 W/cm 3 、10 4 W/cm 3 Or 10 5 W/cm 3 And the like, may be other values within the above range, and is not limited herein.
In some embodiments, the laser pulse width of the laser thermal treatment may be in the picosecond range or in the nanosecond range.
In some embodiments, the overlapping ratio of the adjacent laser spots of the laser heat treatment is greater than 0, and it should be noted that the overlapping ratio of the adjacent laser spots is greater than 0, that is, the adjacent laser spots are tangent or intersect.
Through the limitation on the laser heat treatment conditions, the main grid line slurry and the auxiliary grid line slurry at the printing overlapping part can be uniformly mixed to form a mixture containing silver paste and aluminum paste, so that the electrical connection of the silver paste and the aluminum paste is realized.
In some embodiments, the ratio of the components in the silver-aluminum paste mixed grid line is respectively: aluminum accounts for 38 +/-3%, silver for 42 +/-3% and the rest for 20 +/-3%. The other components may include components of organic resins, binders, modifiers, ohmic contact additives, and the like.
Understandably, the purpose of effectively reducing the cost of a single battery can be achieved by limiting the component proportion of the silver-aluminum paste mixed grid line, and meanwhile, the effective electrical connection of the silver paste and the aluminum paste can be ensured.
In some embodiments, the method of manufacturing a solar cell unit further comprises the steps of:
and passivating the semiconductor substrate to form a passivation film on the semiconductor substrate.
The passivation film has good passivation performance on the surface of the semiconductor substrate, and can comprise passivation films such as an aluminum oxide film, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a carbon nitrogen silicon oxide film and the like.
The sequence of forming the main grid line and the auxiliary grid line on the semiconductor substrate is not strictly specified, the main grid line can be formed first and then the auxiliary grid line can be formed according to actual conditions, the auxiliary grid line can also be formed first and then the main grid line can be formed, but in the process of forming the main grid line and the auxiliary grid line, at least one of the main grid line and the auxiliary grid line is ensured to form ohmic contact with the semiconductor substrate, and thus, the electrical performance of the solar cell unit can be ensured.
In some embodiments, a main grid line is formed on the semiconductor substrate by metallization processing with a main grid line slurry; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering main grid line slurry on the passivated semiconductor substrate to form a main grid line in ohmic contact with the semiconductor substrate;
and printing and drying the secondary grid line slurry on the passivated semiconductor substrate to form the secondary grid line.
In this embodiment, in the process of forming the main gate line and the sub-gate line on the semiconductor substrate, the passivation-treated semiconductor substrate is first printed, dried and sintered with the main gate line slurry to form the main gate line in ohmic contact with the semiconductor substrate, and then printed and dried with the sub-gate line slurry to form the sub-gate line, which does not form ohmic contact with the semiconductor substrate.
In some embodiments, a main grid line is formed on the semiconductor substrate by metallization processing with a main grid line slurry; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering the passivated semiconductor substrate with secondary grid line slurry to form a secondary grid line in ohmic contact with the semiconductor substrate;
and printing and drying the main grid line slurry on the passivated semiconductor substrate to form the main grid line.
In this embodiment, in the process of forming the main gate line and the sub-gate line on the semiconductor substrate, the sub-gate line slurry is printed, dried and sintered on the passivated semiconductor substrate to form the sub-gate line forming ohmic contact with the semiconductor substrate, and then the main gate line slurry is printed and dried to form the main gate line, which does not form ohmic contact with the semiconductor substrate.
In some embodiments, during the laser heat treatment of the printing overlapping portion by using a laser, the laser penetrates through a passivation layer on the semiconductor substrate, so that the mixed paste of the main grid line paste and the auxiliary grid line paste is electrically connected with the semiconductor substrate to form the silver-aluminum paste mixed grid line which forms ohmic contact with the semiconductor substrate.
In some embodiments, the length of the silver-aluminum paste mixed grid line is 20 μm to 500 μm.
Alternatively, the length of the silver-aluminum paste mixed grid line may be 20 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, or 500 μm, etc., or may be other values within the above range, which is not limited herein.
In this embodiment, through the injecing to the length of the mixed grid line of silver-aluminum thick liquid, can reach the purpose that effectively reduces metal grid line structure cost on the one hand, on the other hand can effectively realize the electricity of silver thick liquid and aluminum paste and connect. When the length of the silver-aluminum paste mixed grid line is less than 20 micrometers and too short, the good electrical connection effect of the silver paste and the aluminum paste cannot be achieved, and the amount of the aluminum paste replacing the silver paste is small, so that the purpose of effectively reducing the structural cost of the metal grid line cannot be achieved; when the length of the silver-aluminum paste mixed grid line is greater than 500 μm and the length is too long, components such as aluminum in the aluminum paste are excessively doped into the silver paste of the main grid line, so that the property of the silver paste is greatly changed, and the electrical contact between the silver paste and the semiconductor substrate is deteriorated, for example, the penetrability is enhanced, the contact resistivity is increased, and the like.
The secondary grid lines can comprise one type or a plurality of types, the types are different depending on the selection of the adopted secondary grid line slurry, in some embodiments, the secondary grid lines can comprise a first secondary grid line and a second secondary grid line, wherein the first secondary grid line and the second secondary grid line are formed by different slurries, and the forming of the secondary grid lines by metallization treatment of the secondary grid line slurry on the semiconductor substrate comprises the following steps:
carrying out metallization treatment on the semiconductor substrate by adopting first auxiliary grid line slurry to form a first auxiliary grid line;
carrying out metallization treatment on the semiconductor substrate by adopting second auxiliary grid line slurry to form a second auxiliary grid line;
the first auxiliary grid lines and the second auxiliary grid lines are alternately arranged at intervals along the length direction of the main grid lines; at least one of the first and second sub-grid line paste comprises aluminum paste. In some embodiments, the first sub-grid line paste may be an aluminum paste, and the second sub-grid line paste may be a silver paste.
The method has the advantages that different types of secondary grid line slurry are adopted to carry out metallization processing on the semiconductor substrate to form different secondary grid lines, and the electrical design requirements of different solar battery units can be met.
An embodiment of the present invention further provides a solar Cell, which may be a P-type Cell, such as a P-type PERC (Passivated Emitter and Rear) Cell, or an N-type Cell, such as a N-type TOPCon (Tunnel Oxide Passivated Contact) Cell, as shown in fig. 2 and fig. 3, and includes:
a semiconductor substrate 1. In some embodiments, the semiconductor substrate 1 is a semiconductor silicon wafer, and the material of the semiconductor silicon wafer may be monocrystalline silicon, polycrystalline silicon, microcrystalline silicon, or the like.
And a plurality of main grid lines 2, wherein the plurality of main grid lines 2 are arranged on the semiconductor substrate 1 at intervals.
A plurality of sub-gate lines 3, the plurality of sub-gate lines 3 being arranged on the semiconductor substrate 1 at intervals along the length direction of the main gate line 2; wherein at least one of the main gate line 2 and the sub gate line 3 forms ohmic contact with the semiconductor substrate 1; the connection part of the auxiliary grid line 3 and the main grid line 2 is provided with a printing overlapping part. The auxiliary grid lines 3 can collect and guide current generated by a photovoltaic effect to the main grid lines 2, the main grid lines 2 guide the collected current out, and the auxiliary grid lines 3 and the main grid lines 2 form a junction of solar cell electric energy. When at least one of the main grid line 2 and the auxiliary grid line 3 is in ohmic contact with the semiconductor substrate 1, the main grid line slurry or the auxiliary grid line slurry is placed at the position of the main grid line 2 or the auxiliary grid line 3 or a metal layer is deposited by a PVD method in a screen printing, ink-jet printing or laser transfer printing mode.
A silver-aluminum paste mixed grid line 4 formed at the printing overlapping part; the silver-aluminum paste mixed grid line 4 and the semiconductor substrate 1 form ohmic contact. The forming mode of the silver-aluminum paste mixed grid line 4 can be formed by adopting a laser heat treatment mode, and the laser can realize the heat treatment process for a short time in a local area, so that the main grid line paste and the auxiliary grid line paste of the printing overlapping part are uniformly mixed to form a mixture containing silver paste and aluminum paste, and the electrical connection of the silver paste and the aluminum paste is realized.
In the above scheme, the solar cell unit of this application includes that semiconductor substrate 1, main grid line 2, vice grid line 3 and silver-aluminum thick liquid mix grid line 4, and silver-aluminum thick liquid mixes grid line 4 and is the mixed grid line structure of silver thick liquid and aluminum thick liquid, compares with current solar cell unit, and the metal grid line structure of this application solar cell unit adopts the aluminum thick liquid of low price to replace partial silver thick liquid preparation to obtain, can reduce monolithic battery's consumption and cost like this.
In some embodiments, the silver-aluminum paste mixed grid line has a length of 20 μm to 500 μm.
Alternatively, the length of the silver-aluminum paste mixed grid line may be 20 μm, 50 μm, 80 μm, 100 μm, 200 μm, 300 μm, 400 μm, or 500 μm, etc., and may also be other values within the above range, which is not limited herein. In one embodiment, the length of the silver-aluminum paste mixed grid line is 300 μm.
In this embodiment, through the injecing to the length of the mixed grid line of silver-aluminum thick liquid, can reach the purpose that effectively reduces metal grid line structure cost on the one hand, on the other hand can effectively realize the electricity of silver thick liquid and aluminum paste and connect. When the length of the silver-aluminum paste mixed grid line is less than 20 micrometers and too short, a good electrical connection effect of the silver paste and the aluminum paste cannot be achieved, and the amount of the aluminum paste replacing the silver paste is small, so that the purpose of effectively reducing the structural cost of the metal grid line cannot be achieved; when the length of the silver-aluminum paste mixed grid line is greater than 500 μm and too long, components such as aluminum in the aluminum paste are excessively doped into the silver paste of the main grid line, so that the property of the silver paste is greatly changed, and the electrical contact between the silver paste and the semiconductor substrate is deteriorated, for example, the penetrability is enhanced, the contact resistivity is increased, and the like.
In some embodiments, as shown in fig. 4, the sub-gate lines 3 include first sub-gate lines 31 and second sub-gate lines 32, and the first sub-gate lines 31 and the second sub-gate lines 32 are alternately arranged along the length direction of the main gate line 2. At least one of the first sub gate line paste forming the first sub gate line 31 and the second sub gate line paste forming the second sub gate line 32 includes an aluminum paste. In some embodiments, the first sub-grid line paste may be an aluminum paste, and the second sub-grid line paste may be a silver paste. The method has the advantages that different types of secondary grid line slurry are adopted to carry out metallization processing on the semiconductor substrate to form different secondary grid lines, and the electrical design requirements of different solar battery units can be met.
The embodiment of the application further provides a solar cell module, the solar cell module comprises the solar cell unit, and the reduction of the preparation cost can be realized under the condition that the performance of the solar cell module is not changed. The solar battery units are connected into the solar battery string in the form of whole or multi-piece (for example, multi-piece such as 1/2 piece, 1/3 piece, 1/4 piece and the like). In some embodiments, the solar cell module further comprises an encapsulant layer for encapsulating the plurality of strings of solar cells and a cover sheet covering the encapsulant layer. For example, the material of the packaging material layer may be EVA, POE, PET or other organic materials, and the cover plate may be a cover plate with a light-transmitting function, such as a glass cover plate, a plastic cover plate, or the like.
Comparative example
A comparative example provides a solar cell unit, and a method of manufacturing the solar cell unit includes the steps of:
step S1: a semiconductor substrate is provided.
Step S2: carrying out metallization treatment on the semiconductor substrate by adopting main grid line slurry to form a main grid line; carrying out metallization treatment on the semiconductor substrate by adopting secondary grid line slurry to form a secondary grid line; the main grid line slurry comprises silver paste, and the auxiliary grid line slurry comprises aluminum paste; the main grid line and the auxiliary grid line are provided with printing overlapping parts; at least one of the main gate line and the sub gate line forms ohmic contact with the semiconductor substrate.
And step S3: and carrying out non-laser heat treatment on the printing overlapping part by adopting non-laser to mix the main grid line slurry and the auxiliary grid line slurry of the printing overlapping part so as to form a silver-aluminum slurry mixed grid line which forms ohmic contact with the semiconductor substrate. The non-laser heat treatment method comprises the following specific steps: sintering treatment is carried out in a sintering furnace, and the peak temperature is 750-850 ℃.
Compared with a comparative solar cell unit, the solar cell unit of the present application performs laser heat treatment on the printing overlapping portion by using laser in step S3, and the rest of the preparation methods are the same, and the comparison experiment shows that:
table 1 comparison table of performance of solar cell unit of the present application and comparative solar cell unit
Among them, the conversion efficiency of the solar cell = (open circuit voltage × (short circuit current) × (fill factor)/(cell area × (light irradiation amplitude)) is 10 × 100%, and as can be seen from the data in table 1, the conversion efficiency of the solar cell prepared by the laser heat treatment method is 0.03% higher than that of the solar cell prepared by the non-laser treatment method.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (11)
1. A method for manufacturing a solar cell unit is characterized by comprising the following steps:
providing a semiconductor substrate;
carrying out metallization treatment on the semiconductor substrate by adopting main grid line slurry to form a main grid line; performing metallization treatment on the semiconductor substrate by adopting secondary grid line slurry to form a secondary grid line; the main grid line slurry comprises silver paste, and the auxiliary grid line slurry comprises aluminum paste; the main grid line and the auxiliary grid line are provided with printing overlapping parts; at least one of the main grid line and the auxiliary grid line forms ohmic contact with the semiconductor substrate;
and carrying out laser heat treatment on the printing overlapping part by adopting laser to mix the main grid line slurry and the auxiliary grid line slurry of the printing overlapping part so as to form a silver-aluminum slurry mixed grid line which forms ohmic contact with the semiconductor substrate.
2. The production method according to claim 1, wherein the conditions of the laser heat treatment satisfy at least one of the following characteristics:
(1) Laser energy density of 10 3 W/cm 3 -10 5 W/cm 3 ；
(2) The laser pulse width is picosecond magnitude or nanosecond magnitude;
(3) The overlapping ratio of adjacent laser spots is more than 0.
3. The preparation method of claim 1, wherein the silver-aluminum paste mixed grid line comprises the following components in proportion: aluminum accounts for 38 +/-3%, silver accounts for 42 +/-3% and the rest accounts for 20 +/-3%.
4. The method of claim 1, comprising the steps of:
and passivating the semiconductor substrate to form a passivation film on the semiconductor substrate.
5. The method according to claim 4, wherein a main grid line is formed on the semiconductor substrate by metallization with a main grid line paste; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering main grid line slurry on the passivated semiconductor substrate to form a main grid line in ohmic contact with the semiconductor substrate;
and printing and drying the secondary grid line slurry on the passivated semiconductor substrate to form the secondary grid line.
6. The method according to claim 4, wherein a main grid line is formed on the semiconductor substrate by metallization with a main grid line paste; the specific method for forming the auxiliary grid line by adopting the auxiliary grid line slurry to carry out metallization treatment on the semiconductor substrate comprises the following steps:
printing, drying and sintering the passivated semiconductor substrate with secondary grid line slurry to form a secondary grid line in ohmic contact with the semiconductor substrate;
and printing and drying the main grid line slurry on the passivated semiconductor substrate to form the main grid line.
7. The method of claim 1, wherein the silver-aluminum paste mixed grid line has a length of 20 μm to 500 μm.
8. The method of manufacturing of claim 1, wherein the step of forming a gridline on the semiconductor substrate by metallization with a gridline paste comprises the steps of:
carrying out metallization treatment on the semiconductor substrate by adopting first auxiliary grid line slurry to form a first auxiliary grid line;
carrying out metallization treatment on the semiconductor substrate by adopting second auxiliary grid line slurry to form a second auxiliary grid line;
the first auxiliary grid lines and the second auxiliary grid lines are alternately arranged at intervals along the length direction of the main grid lines; at least one of the first and second sub-gate line pastes includes an aluminum paste.
9. A solar cell unit, comprising:
a semiconductor substrate;
the plurality of main grid lines are arranged on the semiconductor substrate at intervals;
a plurality of sub-gate lines arranged on the semiconductor substrate at intervals along a length direction of the main gate line; wherein at least one of the main gate line and the sub-gate line forms an ohmic contact with the semiconductor substrate; the connection part of the auxiliary grid line and the main grid line is provided with a printing overlapping part;
the silver-aluminum paste mixed grid line is formed at the printing overlapping part; the silver-aluminum paste mixed grid line and the semiconductor substrate form ohmic contact.
10. The solar cell unit of claim 9, wherein the silver-aluminum paste hybrid grid line has a length of 20 μm to 500 μm.
11. A solar cell module comprising the solar cell unit according to any one of claims 9 or 10, wherein the solar cell units are connected in a monolithic or multi-segmented manner to form a solar cell string.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210761068.6A CN115148837A (en) | 2022-06-29 | 2022-06-29 | Solar cell, preparation method thereof and photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210761068.6A CN115148837A (en) | 2022-06-29 | 2022-06-29 | Solar cell, preparation method thereof and photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115148837A true CN115148837A (en) | 2022-10-04 |
Family
ID=83409543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210761068.6A Pending CN115148837A (en) | 2022-06-29 | 2022-06-29 | Solar cell, preparation method thereof and photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115148837A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024146054A1 (en) * | 2023-01-05 | 2024-07-11 | 浙江晶科能源有限公司 | Solar cell stencil, solar cell, and photovoltaic module |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102067323A (en) * | 2008-06-18 | 2011-05-18 | 巴斯夫欧洲公司 | Method for producing electrodes for solar cells |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN103779431A (en) * | 2013-12-19 | 2014-05-07 | 湖南红太阳光电科技有限公司 | Method for preparing crystal silicon cell metal electrode |
| CN105742378A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Metallization method of N-type solar cell, cell, module and system |
| CN106997910A (en) * | 2017-03-24 | 2017-08-01 | 乐叶光伏科技有限公司 | P-type crystal silicon back contacts double-side cell structure and preparation method without front gate line |
| CN206672943U (en) * | 2017-03-24 | 2017-11-24 | 隆基乐叶光伏科技有限公司 | A kind of P-type crystal silicon back contacts double-side cell structure of no front gate line |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
| CN109392312A (en) * | 2016-06-10 | 2019-02-26 | 信越化学工业株式会社 | The manufacturing method of solar battery, the manufacture system of solar battery and solar battery |
| CN212485343U (en) * | 2020-05-22 | 2021-02-05 | 浙江硕克科技有限公司 | Alternating solar cell electrode |
-
2022
- 2022-06-29 CN CN202210761068.6A patent/CN115148837A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102067323A (en) * | 2008-06-18 | 2011-05-18 | 巴斯夫欧洲公司 | Method for producing electrodes for solar cells |
| CN102916087A (en) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | Solar cell and manufacturing method thereof |
| CN103779431A (en) * | 2013-12-19 | 2014-05-07 | 湖南红太阳光电科技有限公司 | Method for preparing crystal silicon cell metal electrode |
| CN105742378A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Metallization method of N-type solar cell, cell, module and system |
| CN109392312A (en) * | 2016-06-10 | 2019-02-26 | 信越化学工业株式会社 | The manufacturing method of solar battery, the manufacture system of solar battery and solar battery |
| CN106997910A (en) * | 2017-03-24 | 2017-08-01 | 乐叶光伏科技有限公司 | P-type crystal silicon back contacts double-side cell structure and preparation method without front gate line |
| CN206672943U (en) * | 2017-03-24 | 2017-11-24 | 隆基乐叶光伏科技有限公司 | A kind of P-type crystal silicon back contacts double-side cell structure of no front gate line |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
| CN212485343U (en) * | 2020-05-22 | 2021-02-05 | 浙江硕克科技有限公司 | Alternating solar cell electrode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024146054A1 (en) * | 2023-01-05 | 2024-07-11 | 浙江晶科能源有限公司 | Solar cell stencil, solar cell, and photovoltaic module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11990554B2 (en) | Solar cell and method for producing same | |
| CN106409929B (en) | Main-grid-free full back contact solar cell module | |
| CN106409956A (en) | N-type crystalline silicon double-sided solar cell structure and preparation method thereof | |
| WO2009144996A1 (en) | Solar battery, method for manufacturing solar battery, and solar battery module | |
| CN102479883A (en) | Method for forming positive electrode of solar cell | |
| CN105826428A (en) | Passivated contact N type crystal silicon cell, preparation method, assembly and system | |
| CN102184973A (en) | Positive electrode structure of solar battery plate | |
| CN108400175A (en) | A kind of heterojunction solar battery and preparation method with electroplated electrode | |
| CN105845754A (en) | Solar energy cell module, preparing method, assembly and system for the cell module | |
| CN209056507U (en) | A kind of MWT hetero-junction silicon solar cell | |
| CN106653876A (en) | Solar cell | |
| CN115148837A (en) | Solar cell, preparation method thereof and photovoltaic module | |
| CN208028070U (en) | A kind of solar battery sheet and battery chip arrays and component | |
| CN102800763A (en) | Solar cell and method for producing grid line electrode of solar cell | |
| CN115148838B (en) | Solar cell, production method and photovoltaic module | |
| CN201699022U (en) | Electrode structure of solar cell | |
| CN212676282U (en) | Back structure of double-sided P-type battery piece | |
| CN115020523B (en) | Solar cell unit, preparation method thereof and solar cell module | |
| WO2013143350A1 (en) | Solar cell, module and method for manufacturing solar cell electrode | |
| CN115911144A (en) | Solar cell and photovoltaic module thereof | |
| CN208507688U (en) | It is able to ascend the p-type PERC double-sided solar battery of back side photoelectric conversion efficiency | |
| CN103606571A (en) | Method for forming electrodes of IBC solar cell | |
| CN105845776A (en) | Local back surface N-type photovoltaic cell preparation method, local back surface N-type photovoltaic cell, local back surface N-type photovoltaic cell assembly and local back surface N-type photovoltaic cell system | |
| CN205564790U (en) | Passivation contact N type crystal silicon cell and subassembly and system thereof | |
| CN108389928A (en) | Solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |