CN108389928A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN108389928A CN108389928A CN201810281332.XA CN201810281332A CN108389928A CN 108389928 A CN108389928 A CN 108389928A CN 201810281332 A CN201810281332 A CN 201810281332A CN 108389928 A CN108389928 A CN 108389928A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 239000000463 material Substances 0.000 claims abstract description 93
- 239000011159 matrix material Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000006388 chemical passivation reaction Methods 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The present invention provides a kind of solar cells and preparation method thereof, it is related to technical field of solar batteries, the solar cell includes cell matrix, passivating film and back electrode, the passivating film is between the cell matrix and the back electrode, and the passivating film is equipped with opening area, high work function semiconductor material layer is equipped in the opening area, the high work function semiconductor material layer is between the cell matrix and the back electrode.It can be alleviated using the solar cell in the localized contact solar cell of the prior art and there is technical issues that high recombination region leads to battery performance, reach the technique effect for reducing battery recombination region and improving battery electrical property.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, to a kind of solar cell and preparation method thereof.
Background technology
Localized contact solar cell is also known as PERC solar cells, and the battery of this structure uses Al at present2O3/
The laminated medium passivating film of SiNx compositions is passivated cell backside, due to Al2O3With negative electrical charge, therefore can exist simultaneously
Realize chemical passivation and the field-effect passivation of dangling bonds in the back side.However, since laminated medium film is non-conductive film, need
Local laser fluting is carried out, metallization is then realized by silk-screen printing and high temperature sintering again.Although this method is mesh
Preceding commercialized high performance solar batteries manufacturing technology, it can be achieved that more than 21% or more transfer efficiency, at present it is industrialized
In PERC solar cells, front is passivated n+ layers using silicon nitride anti-reflection film, and the back side uses Al2O3P+ layers of/SiNx passivation, it is compound
The Metals-semiconductor contacts region formed after silk-screen printing sintering is taken place mostly in, which belongs to high recombination region
Domain.To reduce the electrical property of solar cell.
In view of this, special propose the present invention.
Invention content
The first object of the present invention is to provide a kind of solar cell, to alleviate the localized contact sun of the prior art
Can there is technical issues that high recombination region leads to battery performance in battery.
The second object of the present invention is to provide a kind of preparation method of solar cell, can be in gold using this method
Belong to and form one layer of transition zone between semi-conductor cell matrix, metal is avoided to be in direct contact with semi-conductor cell matrix.
In order to realize that the above-mentioned purpose of the present invention, spy use following technical scheme：
A kind of solar cell, including cell matrix, passivating film and back electrode, the passivating film are located at the battery base
Between body and the back electrode, the passivating film is equipped with opening area, and high work function semiconductor is equipped in the opening area
Material layer, the high work function semiconductor material layer is between the cell matrix and the back electrode.
Further, the work function of the semi-conducting material in high work function semiconductor material layer is more than the work content of p-type silicon
Number；
Preferably, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV.
Further, high work function semi-conducting material is transition metal oxide.
Further, the transition metal oxide includes one kind in tungsten oxide, vanadium oxide, zirconium oxide or molybdenum oxide
Or at least two combination.
Further, the number of plies >=2 layer of the high work function semiconductor material layer.
Further, the thickness per floor height work function semiconductor material layer is 0.5-20nm.
Further, the battery matrix is P-type wafer.
Further, the battery front side of matrix is equipped with silicon nitride anti-reflection film.
A kind of preparation method of above-mentioned solar cell prepares passivating film and high work function respectively on cell matrix surface
Then semiconductor material layer prepares back electrode in the passivating film and the high work function semi-conducting material layer surface, obtains institute
State solar cell.
Further, high work function semiconductor material layer is prepared using hot evaporation or magnetron sputtering technique；
Preferably, the evaporation rate during being deposited is 0.1-10A/s.
Further, back electrode is prepared in the passivating film and the high work function semi-conducting material layer surface.
Further, the one kind or at least two of the material of the back electrode in Al, Ag, Ni, Cu, Pb, TCO or ITO
The combination of kind.
Compared with the prior art, the present invention has the advantages that：
Solar cell provided by the invention is made in the opening area of passivation layer with high work function semiconductor material layer
Metal back electrode and semi-conductor cell matrix are connected for transition zone, it is high compound caused by avoiding metal from being in direct contact with semiconductor
Region occurs, and the open-circuit voltage of battery is improved, to improve the electrical property of battery.
On the one hand high work function semiconductor material layer in the present invention can be passivated silicon chip surface, machine for inactivating
Reason is as follows：1) work function of high work function semi-conducting material is more than the work function of cell matrix Si, when high work function semiconductor material
After two kinds of materials of material and silicon realize metallurgical grade contact, due to the difference of work function (i.e. fermi level), electronics will be from battery base
It is moved into high work function semiconductor material layer in body Si materials, to generate a hole-rich layer, i.e. p+ on the surfaces Si
Layer, in this way, the minority carrier density on the surfaces Si is reduced indirectly, it is compound to reduce；2) high work function semiconductor material layer with
Si cell matrix reacts the SiO to form one layer of 0.1-2nm2, chemical passivation is provided.Cell matrix Si is through high work function semiconductor
After passivating material, reduce complex centre, the open-circuit voltage of battery can be further increased；Another aspect high work function is partly led
Body material also has both the effect of transmission charge, and photo-generated carrier is made to be transmitted to back electrode through high work function material layer.
To sum up, solar cell provided by the invention uses high work function semiconductor material layer as cell matrix Si and gold
Belong to the transition zone between back electrode, metal-semiconductor contact area can be effectively reduced, to reduce the area of recombination region,
The complex centre in cell matrix can also be reduced simultaneously, to promote the open-circuit voltage of solar cell, and then improve it electrically
Energy.
Description of the drawings
It, below will be to tool in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Body embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing be some embodiments of the present invention, for those of ordinary skill in the art, what is do not made the creative labor
Under the premise of, other drawings may also be obtained based on these drawings.
Fig. 1 is the structural schematic diagram for the solar cell that the embodiment of the present invention 1 provides；
Fig. 2 is the structural schematic diagram for the solar cell that the embodiment of the present invention 2 provides；
Fig. 3 is the structural schematic diagram for the solar cell that comparative example 1 provides.
Icon：10-P type silicon chips；20-n+ diffusion layers；30- silicon nitride anti-reflection films；40- cathode； 50-Al2O3Passivation layer；
60- silicon nitride layers；70- back electrodes；80- high work function semiconductor material layers；81- the first high work function semiconductor material layers；
82- the second high work function semiconductor material layers.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described reality
It is a part of the embodiment of the present invention to apply example, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work belongs to what the present invention protected
Range.
In the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, be only for
Convenient for the description present invention and simplify description, specific side must be had by not indicating or implying the indicated device or element
Position, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ",
" connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally connect
It connects；It can be mechanical connection, can also be electrical connection；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, can understand as the case may be
The concrete meaning of above-mentioned term in the present invention.
One aspect of the present invention provides a kind of solar cell, including cell matrix, passivating film and back electrode, institute
Passivating film is stated between the cell matrix and the back electrode, and the passivating film is equipped with opening area, the aperture area
In domain be equipped with high work function semiconductor material layer, the high work function semiconductor material layer be located at the cell matrix with it is described
Between back electrode.
Solar cell provided by the invention is made in the opening area of passivation layer with high work function semiconductor material layer
Metal back electrode and semi-conductor cell matrix are connected for transition zone, it is high compound caused by avoiding metal from being in direct contact with semiconductor
Region occurs, and the open-circuit voltage of battery is improved, to improve the electrical property of battery.
On the one hand high work function semiconductor material layer in the present invention can be passivated silicon chip surface, machine for inactivating
Reason is as follows：1) work function of high work function semi-conducting material is more than the work function of cell matrix Si, when high work function semiconductor material
After two kinds of materials of material and silicon realize metallurgical grade contact, due to the difference of work function (i.e. fermi level), electronics will be from battery base
It is moved into high work function semiconductor material layer in body Si materials, to generate a hole-rich layer, i.e. p+ on the surfaces Si
Layer, in this way, the minority carrier density on the surfaces Si is reduced indirectly, it is compound to reduce；2) high work function semiconductor material layer with
Si cell matrix reacts the SiO to form one layer of 0.1-2nm2, chemical passivation is provided.Cell matrix Si is through high work function semiconductor
After passivating material, reduce complex centre, the open-circuit voltage of battery can be further increased；Another aspect high work function is partly led
Body material also has both the effect of transmission charge, and photo-generated carrier is made to be transmitted to back electrode through high work function material layer.
It should be noted that high work function material signified in the present invention refers to the material for the work function that work function is more than silicon
Material.Meanwhile specific restriction is not made to the number of plies of specific high work function semiconductor material layer in the present invention, wherein Gao Gong
It can also be several layers that function semiconductor material layer, which can be one layer,.Opening area in the present invention is through-hole, the i.e. opening area
Perforation cell matrix and back electrode, the both sides for the high work function semiconductor material layer being set in opening area are separately connected electricity
Pond matrix and back electrode.
In certain embodiments of the present invention, the work function of the semi-conducting material in high work function semiconductor material layer
More than the work function of p-type silicon；Optionally, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV；
High work function semi-conducting material is transition metal oxide.
It is understood that not made specifically to the type of specific transition metal oxide in the above embodiment
Restriction, as long as meet work function requirement.
In certain embodiments of the present invention, the transition metal oxide includes tungsten oxide, vanadium oxide, zirconium oxide
One kind in molybdenum oxide or at least two combination.
At least two combination for example can be tungsten oxide layer and one layer of vanadium oxide combination or tungsten oxide layer and
The combination of the combination of one layer of molybdenum oxide or one layer of vanadium oxide and one layer of molybdenum oxide or tungsten oxide layer, one layer of vanadium oxide and one
The combination of layer molybdenum oxide.
In certain embodiments of the present invention, the number of plies >=2 layer of the high work function semiconductor material layer.
It sets high work function semiconductor material layer to multilayered structure, passivation effect can be reinforced.The structure can conduct
The universal architecture of passivation contact film local contact, to improve the transfer efficiency of localized contact solar cell.
In an embodiment of the invention, the high work function semiconductor material layer includes the first high work function half
Conductor material layer and the second high work function semiconductor material layer.
First high work function semiconductor material layer continuous uniform is distributed in silicon chip surface, the second high work function semiconductor material
The bed of material pair the first high work function semiconductor material layer carries out covering or part covers, and avoids back electrode and silicon chip battery matrix
Surface is in direct contact.
In certain embodiments of the present invention, the thickness per floor height work function semiconductor material layer is 0.5-20nm.Example
Such as, the thickness of high work function semiconductor material layer can be 0.5nm, 1nm, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 14nm,
16nm, 18nm or 20nm.
In certain embodiments of the present invention, the battery matrix is P-type wafer.
P-type silicon chip, resistivity 1-3 Ω cm, as absorbed layer, main function is to be by the converting photons for the condition that meets
Electronics.
It is doped to form n+ diffusion layers, also known as emitter in p-type silicon chip front, main function is and p-type silicon chip shape
At p-n junction, selective transmission, 0.5 μm or so of depth are carried out to electronics.
In certain embodiments of the present invention, the battery front side of matrix is equipped with silicon nitride anti-reflection film.Silicon nitride
Anti-reflection film thickness 75nm or so, main function：1) it provides H atom and carries out dangling bonds saturation；2) play the role of antireflective, increase
Add the transmitance of light；3) itself positively charged offer field-effect of institute is utilized to be passivated.
The second aspect of the invention provides a kind of preparation method of above-mentioned solar cell, on cell matrix surface
Passivating film and high work function semiconductor material layer are prepared respectively, then in the passivating film and the high work function semiconductor material
Bed of material surface prepares back electrode, obtains the solar cell.
In certain embodiments of the present invention, high work function is prepared using hot evaporation or magnetron sputtering technique partly to lead
Body material layer；Optionally, according to the thickness of high work function semiconductor material layer, the evaporation rate during being deposited is 0.1-
10A/s。
It is understood that high work function semiconductor material layer preparation method is various, such as thermal evaporation deposition, magnetron sputtering
Method or atomic layer deposition method etc..
Thermal evaporation deposition is selected to prepare high work function semiconductor material layer, in preparation process, battery substrate temperature is room
Temperature realizes low temperature process, reduces influence of the high temperature to crystal defect.
In certain embodiments of the present invention, in the passivating film and the high work function semi-conducting material layer surface
Prepare back electrode.Optionally, one kind in Al, Ag, Ni, Cu, Pb, TCO or ITO of the material of the back electrode or at least
Two kinds of combination.
It is understood that the back electrode in the present invention plays the role of hole transport to external circuit.Back electrode can be with
It is metal electrode, can also be transparent conductive film TCO, vapour deposition method or magnetron sputtering method can be utilized to be prepared.
In certain embodiments of the present invention, the preparation method of above-mentioned solar cell includes the following steps：Silicon chip according to
Secondary cleaned making herbs into wool, POCl3It spreads, removes back of the body knot, plate silicon nitride anti-reflection film, prepare passivating film, card face screen printing electrode, burn
Knot, back surface laser open film preparation opening area, the first high work function semiconductor material layer are deposited in opening area, the
Described in the second high work function semiconductor material layer is deposited in one high work function semi-conducting material layer surface, vapor deposition back electrode obtains too
Positive energy battery.
The present invention is described in further details below in conjunction with embodiment.
Embodiment 1
As shown in Figure 1, the present embodiment is a kind of solar cell, including following sections：
1) P-type wafer 10：The converting photons for the condition that meets are electronics, p-type as absorbed layer by 2 Ω cm of resistivity
The size of silicon chip is 2 × 2cm2；
2) n+ diffusion layers 20：Also known as emitter, main function are to form p-n junction with p-Si, and selectivity is carried out to electronics
Transmission, 0.5 μm or so of depth, using POCl3As phosphorus source, it is prepared in tube furnace diffusion；
3) silicon nitride anti-reflection film 30：Deposition preparation, thickness 75nm or so are carried out by PECVD；
4) cathode 40：Silk-screen printing, high temperature sintering obtain, and are used for transmission carrier；
5)Al2O3Passivation layer 50：Prepared by Atomic layer deposition method, thickness about 5nm or so, for p-type silicon chip into
Row passivation；
6) silicon nitride layer 60：It being prepared by PECVD depositions, thickness 100nm, effect predominantly provides H atom,
Enhance the chemical passivation of passivating film, while also there is reflection long-wave band light and play a protective role；
7) back electrode 70：It for metal electrode, is obtained, is played hole transport to dispatch from foreign news agency by magnetron sputtering or hot evaporation
The effect on road.
8) high work function semiconductor material layer 80：The layer is only one layer, the high work function semi-conducting material in the present embodiment
Layer is vanadium oxide layer, and thickness 9nm is abbreviated as 9nm-V2O5。
Embodiment 2
As shown in Fig. 2, the present embodiment is a kind of solar cell, difference from example 1 is that, the present embodiment
In high work function semiconductor material layer be 2 layers, be divided into the first high work function semiconductor material layer 81 and the second high work function half
Conductor material layer 82, wherein the one the first high work function semiconductor material layers 81 are 9nm-V2O5, the second high work function semiconductor
Material layer 82 is 3nm-WO3.High work function semiconductor material layer in the present embodiment is denoted as 9nm-V2O5/3nm-WO3, other
Part is same as Example 1.
Embodiment 3
The present embodiment is a kind of solar cell, compared with Example 2, the difference is that, high work function semiconductor material
The bed of material is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/6nm-WO3, other parts and embodiment 2
It is identical.
Embodiment 4
The present embodiment is a kind of solar cell, compared with Example 2, the difference is that, high work function semiconductor material
The bed of material is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/9nm-WO3, other parts and embodiment 2
It is identical.
Comparative example 1
As shown in figure 3, this comparative example is a kind of solar cell, compared with Example 2, the difference is that, this comparison
It is in direct contact with silicon chip without high work function semiconductor material layer, back electrode in example.
The properties for the solar cell that testing example 1-4 and comparative example 1 provide respectively, are as a result listed in table 1.
1 test result of table
By the test result of table 1 it is found that the open-circuit voltage for the solar cell that 1-4 of the embodiment of the present invention is provided is apparent
Pressure is opened higher than the solar cell in comparative example 1, transfer efficiency also increases.
To sum up, solar cell provided by the invention uses high work function semiconductor material layer as cell matrix Si and gold
Belong to the transition zone between back electrode, metal-semiconductor contact area can be effectively reduced, to reduce the area of recombination region,
The complex centre in cell matrix can also be reduced simultaneously, to promote the open-circuit voltage of solar cell, and then improve it electrically
Energy.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；
Although present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：Its
It still can be either special to which part or whole technologies with technical scheme described in the above embodiments is modified
Sign carries out equivalent replacement；And these modifications or replacements, the present invention that it does not separate the essence of the corresponding technical solution is each to be implemented
The range of example technical solution.
Claims (10)
1. a kind of solar cell, which is characterized in that including cell matrix, passivating film and back electrode, the passivating film is located at institute
It states between cell matrix and the back electrode, and the passivating film is equipped with opening area, and high work content is equipped in the opening area
Number semiconductor material layer, the high work function semiconductor material layer is between the cell matrix and the back electrode.
2. solar cell according to claim 1, which is characterized in that the semiconductor in high work function semiconductor material layer
The work function of material is more than the work function of p-type silicon；
Preferably, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV；
Preferably, high work function semi-conducting material is transition metal oxide.
3. solar cell according to claim 2, which is characterized in that the transition metal oxide include tungsten oxide,
One kind in vanadium oxide, zirconium oxide or molybdenum oxide or at least two combination.
4. according to claim 1-3 any one of them solar cells, which is characterized in that the high work function semi-conducting material
The number of plies >=2 layer of layer.
5. solar cell according to claim 4, which is characterized in that per the thickness of floor height work function semiconductor material layer
For 0.5-20nm.
6. according to claim 1-3 any one of them solar cells, which is characterized in that the battery matrix is p-type
Silicon chip.
7. according to claim 6ization solar cell, which is characterized in that the battery front side of matrix is equipped with nitridation
Silicon antireflective film.
8. a kind of preparation method of claim 1-7 any one of them solar cells, which is characterized in that in cell matrix table
Face prepares passivating film and high work function semiconductor material layer respectively, then in the passivating film and the high work function semiconductor material
Bed of material surface prepares back electrode, obtains the solar cell.
9. preparation method according to claim 8, which is characterized in that prepared using hot evaporation or magnetron sputtering technique high
Work function semiconductor material layer；
Preferably, the evaporation rate during being deposited is 0.1-10A/s.
10. preparation method according to claim 8, which is characterized in that using depositing operation in the passivating film and institute
It states high work function semi-conducting material layer surface and prepares back electrode；
Preferably, the group of the one kind or at least two of the material of the back electrode in Al, Ag, Ni, Cu, Pb, TCO or ITO
It closes.
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| CN109659400A (en) * | 2018-12-29 | 2019-04-19 | 浙江师范大学 | The method that monocrystalline silicon surface is passivated with vanadium oxide |
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