CN108470778A - Solar cell inactivating film and passivating back solar cell and preparation method thereof - Google Patents
Solar cell inactivating film and passivating back solar cell and preparation method thereof Download PDFInfo
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- CN108470778A CN108470778A CN201810304090.1A CN201810304090A CN108470778A CN 108470778 A CN108470778 A CN 108470778A CN 201810304090 A CN201810304090 A CN 201810304090A CN 108470778 A CN108470778 A CN 108470778A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000000415 inactivating effect Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000011159 matrix material Substances 0.000 claims abstract description 32
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 9
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000006870 function Effects 0.000 description 80
- 238000002161 passivation Methods 0.000 description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
- 229910052593 corundum Inorganic materials 0.000 description 15
- 229910001845 yogo sapphire Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910004205 SiNX Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 238000006388 chemical passivation reaction Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention provides a kind of solar cell inactivating films and passivating back solar cell and preparation method thereof, it is related to technical field of solar batteries, the solar cell inactivating film includes the high work function semiconductor material layer and silicon nitride layer set gradually, and the high work function semiconductor material layer with cell matrix for contacting.Al in the localized contact solar cell of the prior art can be alleviated using the solar cell inactivating film2O3Passivating film preparation process difficulty with technical problem of high cost, has achieved the purpose that reduce technology difficulty and cost greatly.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, to a kind of solar cell inactivating film and passivating back
Solar cell and preparation method thereof.
Background technology
Localized contact solar cell is also known as PERC solar cells, and the battery of this structure uses Al at present2O3/
The laminated medium passivating film of SiNx compositions is passivated cell backside. Al2O3The passivation principle of/SiNx passivating films is not according to
With preparation method and film thickness and difference, for relatively thin Al2O3/ SiNx laminations, PASSIVATION MECHANISM are to pass through Al2O3Layer itself
The result that the field passivation that the fixed negative charge of carrying provides and the H chemical passivations that SiNx layer provides are overlapped mutually；And for thicker
Al2O3Layer (generally more than 10nm), preparation method is deposited by PECVD, is to pass through Al then being passivated2O3Itself is provided
The field passivation that is formed of fixed negative charge, and its chemical passivation then comes from Al2O3What the H in the H and SiNx in film was superimposed
As a result.Due to Al2O3With negative electrical charge, therefore chemical passivation and the field-effect passivation of dangling bonds can be overleaf realized simultaneously.Although
This method is the manufacturing technology of current commercialized high performance solar batteries, it can be achieved that transfer efficiency more than 21% or more,
But there are following disadvantages for it：
1)Al2O3Although depositing technology maturation, equipment is expensive, and home equipment is about 5,000,000-1,000 ten thousand, and import is set
It is standby to be generally more than 10,000,000；
2) additional processing step is not only additional Al2O3, SiNx depositing operations, also need in addition carry out laser die sinking
Technique, this can all increase the production cost of enterprise；
3) localized contact can bring the reduction of fill factor due to using smaller contact area.
In addition, also technology discloses, with ultra-thin Al2O3It is required to have tunneling characteristics as while being inserted into passivation layer, so
Afterwards in Al2O3The outside of film carrier is realized using one floor height work function transition metal oxide material of thermal evaporation deposition
Selectivity transmission, is a kind of completely new structure on such body structure surface, but its to prepare difficulty larger, and should not realize compared with
High efficiency, main cause are as follows：
1) ultra-thin Al2O3Tunnel layer is extremely sensitive to thickness requirement, usually in 1-2nm, therefore, in terms of thickness control in itself
It is exactly a technological difficulties；
2) to making Al2O3It realizes preferable field-effect passivation, needs to make Al2O3Thickness be more than 2nm, therefore tunnelling and
Good passivation can not get both simultaneously；
3)Al2O3Its perfect inactivating performance of annealing competence exertion, back electrode is needed to prepare still with silk-screen printing and high temperature
Sintering, however its chemical characteristic has lost high work function transition metal oxide at high temperature, therefore gained battery efficiency is lower
Even for inefficiency；
4)Al2O3Equipment is expensive, increases the manufacturing cost of battery.
In view of this, special propose the present invention.
Invention content
The first object of the present invention is to provide a kind of solar cell inactivating film, to alleviate the localized contact of the prior art
Al in solar cell2O3The big and of high cost technical problem of passivating film preparation process difficulty.
The second object of the present invention is to provide a kind of passivating back solar cell, partly be led with high work function in the battery
The composite membrane of body material layer and silicon nitride layer reduces the cost of battery as passivation layer while ensureing battery conversion efficiency.
The third object of the present invention is to provide a kind of preparation method of passivating back solar cell, and this method can drop
The manufacturing cost of low battery passivation film.
In order to realize that the above-mentioned purpose of the present invention, spy use following technical scheme：
A kind of solar cell inactivating film, including the high work function semiconductor material layer and silicon nitride layer that set gradually, institute
High work function semiconductor material layer is stated for being contacted with cell matrix.
Further, the work function of the semi-conducting material in high work function semiconductor material layer is more than the work content of p-type silicon
Number.
Further, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV.
Further, high work function semi-conducting material is transition metal oxide.
Further, the transition metal oxide include one kind in tungsten oxide, vanadium oxide, zirconium oxide or molybdenum oxide or
At least two combination.
Further, the thickness of the high work function semiconductor material layer is 5-100nm.
Further, the thickness of the silicon nitride layer is 10-150nm.
A kind of passivating back solar cell, including cell matrix, back electrode and above-mentioned passivating film, the passivating film are located at
Between the cell matrix and the back electrode, and the passivating film is equipped with opening area, and the back electrode penetrates through the trepanning
Region is contacted with the cell matrix.
Further, the cell matrix is P-type wafer.
Further, the cell matrix front is equipped with silicon nitride anti-reflection film.
A kind of preparation method of above-mentioned passivating back solar cell, passivating film and the back of the body are sequentially prepared at the cell matrix back side
Electrode obtains the passivating back solar cell.
Further, it is prepared at the cell matrix back side using hot evaporation, atomic layer deposition or magnetron sputtering technique blunt
Change the high work function semiconductor material layer of film；
Preferably, the evaporation rate during being deposited is 0.1-10A/s；
Preferably, the nitridation of passivating film is prepared in the high work function semi-conducting material layer surface using depositing operation
Silicon layer.
Compared with the prior art, the present invention has the advantages that：
Solar cell inactivating film provided by the invention, is made of high work function semiconductor material layer and silicon nitride layer,
PASSIVATION MECHANISM is as follows：1) high work function semi-conducting material belongs to high work function material (work function for being more than cell matrix Si), when
After two kinds of materials of high work function semi-conducting material and silicon realize metallurgical grades contact, due to the difference of work function (i.e. fermi level),
Electronics will be moved from cell matrix Si materials into high work function semiconductor material layer, to generate one on the surfaces Si
Hole-rich layer, i.e. p+ layer, in this way, the minority carrier density on the surfaces Si is reduced indirectly, it is compound to reduce；2) high work function
Semiconductor material layer reacts the SiO to form one layer of 0.1-2nm with Si matrixes2, chemical passivation is provided.
Passivating back solar cell provided by the invention is passivation with high work function semiconductor material layer and silicon nitride layer
Film, high work function semiconductor material layer can induce in Si matrix surfaces and generate one layer of hole-rich layer, and SiNx can provide good
Good H passivation；High work function semiconductor material layer continuous uniform is distributed in the silicon chip surface of cell matrix, and SiNx layer is covered in height
Work function semiconductor material surface to realize effective passivation to p-type Si, and then improves the transfer efficiency of battery.
The advantages of passivating back solar cell provided by the invention：
1) low to the thickness evenness requirement of passivating film in passivation solar cell in face provided by the invention, reduce system
Standby technical threshold；
2) the high work function semi-conducting material itself in passivating film is semiconductor, for once sintered metallization process,
The phenomenon that the contact performance deficiency generated because of Sintering Problem can be alleviated helps to reduce product fraction defective；
3) high work function semi-conducting material itself is semi-conducting material, has carrier transmission performance, therefore high work function
The passivating film of semiconductor material layer and silicon nitride layer composition can reduce the contact resistance of solar cell, to promote its filling
The factor；
4) it can be combined with conductive film, realize the preparation of p-type double-side cell.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is the structural schematic diagram for the passivating back solar cell that the embodiment of the present invention 1 provides.
Icon：10-P type silicon chips；20-n+ diffusion layers；30- silicon nitride anti-reflection films；40- cathode；50- high work functions are partly led
Body material layer；60- silicon nitride layers；70- back electrodes.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for the description present invention and simplify description, do not indicate or imply the indicated device or element must have a particular orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
Can also be electrical connection to be mechanical connection；It can be directly connected, can also indirectly connected through an intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood as the case may be
Concrete meaning in the present invention.
One aspect of the present invention provides a kind of solar cell inactivating film, including the high work function set gradually is partly led
Body material layer and silicon nitride layer, the high work function semiconductor material layer with cell matrix for contacting.
Solar cell inactivating film provided by the invention, is made of high work function semiconductor material layer and silicon nitride layer,
PASSIVATION MECHANISM is as follows：1) high work function semi-conducting material belongs to high work function material (work function for being more than cell matrix Si), when
After two kinds of materials of high work function semi-conducting material and silicon realize metallurgical grades contact, due to the difference of work function (i.e. fermi level),
Electronics will be moved from cell matrix Si materials into high work function semiconductor material layer, to generate one on the surfaces Si
Hole-rich layer, i.e. p+ layer, in this way, the minority carrier density on the surfaces Si is reduced indirectly, it is compound to reduce；2) high work function
Semiconductor material layer reacts the SiO to form one layer of 0.1-2nm with Si matrixes2, chemical passivation is provided.
It should be noted that not making specific limit to the number of plies of specific high work function semiconductor material layer in the present invention
It is fixed, wherein it can also be several layers that high work function semiconductor material layer, which can be one layer,.Opening area in the present invention is through-hole,
It is in direct contact in the opening area endobasal-body and back electrode.
In certain embodiments of the present invention, the work function of the semi-conducting material in high work function semiconductor material layer is big
In the work function of p-type silicon；Optionally, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV.Gao Gong
Function semi-conducting material is transition metal oxide.
It is understood that not made specifically to the type of specific transition metal oxide in the above embodiment
It limits, as long as meeting work function requirement.
In certain embodiments of the present invention, the transition metal oxide include tungsten oxide, vanadium oxide, zirconium oxide or
One kind in molybdenum oxide or at least two combination.
At least two combination for example can be combination or the tungsten oxide layer and one of tungsten oxide layer and one layer of vanadium oxide
The combination of layer molybdenum oxide or the combination or tungsten oxide layer of one layer of vanadium oxide and one layer of molybdenum oxide, one layer of vanadium oxide and one layer of oxygen
Change the combination of molybdenum.
In certain embodiments of the present invention, the thickness of the high work function semiconductor material layer is 5-100nm.Example
Such as, the thickness of high work function semiconductor material layer can be 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm,
80nm, 90nm or 100nm.
In certain embodiments of the present invention, the thickness of the silicon nitride layer is 10-150nm.For example, silicon nitride layer
Thickness can be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm,
130nm, 140nm or 150nm.
The second aspect of the invention provides a kind of passivating back solar cell, including cell matrix, back electrode and
Above-mentioned passivating film, the passivating film is between the cell matrix and the back electrode, and the passivating film is equipped with aperture area
Domain, the back electrode penetrate through the opening area and are contacted with the cell matrix.
Passivating back solar cell provided by the invention is passivation with high work function semiconductor material layer and silicon nitride layer
Film, high work function semiconductor material layer can induce in Si matrix surfaces and generate one layer of hole-rich layer, and SiNx can provide good
Good H passivation；High work function semiconductor material layer continuous uniform is distributed in the silicon chip surface of cell matrix, and SiNx layer is covered in height
Work function semiconductor material surface to realize effective passivation to p-type Si, and then improves the transfer efficiency of battery.
The advantages of passivating back solar cell provided by the invention：
1) low to the thickness evenness requirement of passivating film in passivation solar cell in face provided by the invention, reduce system
Standby technical threshold；
2) the high work function semi-conducting material itself in passivating film is semiconductor, for once sintered metallization process,
The phenomenon that the contact performance deficiency generated because of Sintering Problem can be alleviated helps to reduce product fraction defective；
3) high work function semi-conducting material itself is semi-conducting material, has carrier transmission performance, therefore high work function
The passivating film of semiconductor material layer and silicon nitride layer composition can reduce the contact resistance of solar cell, to promote its filling
The factor；
4) it can be combined with conductive film, realize the preparation of p-type double-side cell.
In certain embodiments of the present invention, the cell matrix is P-type wafer.
P-type silicon chip, resistivity 1-3 Ω cm, as absorbed layer, main function is will to meet the converting photons of condition for electricity
Son.
It is doped to form n+ diffusion layers, also known as emitter in p-type silicon chip front, main function is and p-type silicon chip shape
At p-n junction, selective transmission, 0.5 μm or so of depth are carried out to electronics.
In certain embodiments of the present invention, the cell matrix front is equipped with silicon nitride anti-reflection film.Silicon nitride anti-reflection
Film thickness 75nm or so, main function：1) it provides H atom and carries out dangling bonds saturation；2) play the role of antireflective, increase light
Transmitance；3) itself positively charged offer field-effect of institute is utilized to be passivated.
The third aspect of the invention provides a kind of preparation method of above-mentioned passivating back solar cell, in battery base
The body back side is sequentially prepared passivating film and back electrode, obtains the passivating back solar cell.
In certain embodiments of the present invention, using hot evaporation, atomic layer deposition or magnetron sputtering technique in battery base
The high work function semiconductor material layer of passivating film is prepared in the body back side；Optionally, according to high work function semiconductor material layer
Thickness, the evaporation rate during being deposited are 0.1-10A/s.
It is understood that high work function semiconductor material layer preparation method is various, for example, vapour deposition method, magnetron sputtering method or
Atomic layer deposition method etc..
Vapour deposition method is selected to prepare high work function semiconductor material layer, in preparation process, cell matrix temperature is room temperature, is realized
Low temperature process, reduces influence of the high temperature to crystal defect.
In certain embodiments of the present invention, using depositing operation in the high work function semi-conducting material layer surface system
It is standby to obtain the silicon nitride layer of passivating film.
It is understood that the back electrode in the present invention plays the role of hole transport to external circuit.Back electrode can be with
It is metal electrode, can also be transparent conductive film TCO, vapour deposition method or magnetron sputtering method can be utilized to be prepared.
In certain embodiments of the present invention, the preparation method of above-mentioned passivating back solar cell includes following step
Suddenly：Silicon chip cleaned making herbs into wool, POCl successively3It spreads, back of the body knot, plating silicon nitride anti-reflection film, reverse side is gone to be sequentially prepared high work function half
Conductor material layer and silicon nitride layer, positive and negative surface screen-printed are sintered to obtain the passivating back solar cell.
The present invention is described in further details below in conjunction with embodiment.
Embodiment 1
As shown in Figure 1, the present embodiment is a kind of passivating back solar cell, including following sections：
1) P-type wafer 10：The converting photons for the condition that meets are electronics, P-type silicon as absorbed layer by 2 Ω cm of resistivity
The size of piece is 2 × 2cm2；
2) n+ diffusion layers 20：Also known as emitter, main function are to form p-n junction with p-Si, and selectivity is carried out to electronics
Transmission, 0.5 μm or so of depth, using POCl3As phosphorus source, it is prepared in tube furnace diffusion；
3) silicon nitride anti-reflection film 30：Deposition preparation, thickness 75nm or so are carried out by PECVD；
4) cathode 40：Silk-screen printing, high temperature sintering obtain；
5) high work function semiconductor material layer 50：It is obtained by thermal evaporation, it acts as：By work function difference, in si
One layer p+ layers are introduced in material, and field passivation is provided indirectly；Meanwhile the SiO to form one layer of 1nm is reacted with Si matrixes2, chemistry is provided
Passivation；
High work function semiconductor material layer in the present embodiment is vanadium oxide layer, and thickness 9nm is abbreviated as 9nm-
V2O5；
6) silicon nitride layer 60：It is prepared by PECVD depositions, thickness 100nm, effect predominantly provides H atom, increases
The chemical passivation of strong passivating film, while also there is reflection long-wave band photon and play a protective role；
7) back electrode 70：For metal electrode, is obtained by magnetron sputtering, hot evaporation or silk-screen printing, play and pass hole
The defeated effect to external circuit.
Embodiment 2
The present embodiment is a kind of passivating back solar cell, compared with Example 1, the difference is that, high work function
Semiconductor material layer is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/3nm-WO3, other parts with
Embodiment 1 is identical.
Embodiment 3
The present embodiment is a kind of passivating back solar cell, compared with Example 1, the difference is that, high work function
Semiconductor material layer is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/6nm-WO3, other parts with
Embodiment 1 is identical.
Embodiment 4
The present embodiment is a kind of passivating back solar cell, compared with Example 1, the difference is that, high work function
Semiconductor material layer is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/9nm-WO3, other parts with
Embodiment 1 is identical.
Embodiment 5
The present embodiment is a kind of passivating back solar cell, compared with Example 1, the difference is that, high work function
Semiconductor material layer is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/12nm-WO3, other parts
It is same as Example 1.
Embodiment 6
The present embodiment is a kind of passivating back solar cell, compared with Example 1, the difference is that, high work function
Semiconductor material layer is different.High work function semiconductor material layer in the present embodiment is 9nm-V2O5/12nm-MoO3, other parts
It is same as Example 1.
Comparative example 1
This comparative example is a kind of passivating back solar cell, compared with Example 1, the difference is that, passivation layer is not
Together.Passivation layer in this comparative example is Al-BSF.Other are same as Example 1.
Comparative example 2
This comparative example is a kind of passivating back solar cell, compared with Example 1, the difference is that, passivation layer is not
Together.Passivation layer in this comparative example is made of one layer of aluminium oxide and one layer of silicon nitride, other are same as Example 1.
The properties for the solar cell that testing example 1-6 and comparative example 1 and 2 provide respectively, are as a result listed in table 1.
1 test result of table
By the test result of table 1 it is found that passivating film provided by the invention there can be excellent inactivating performance, have this blunt
The pressure of opening for changing the solar cell of film result is compared with the passivating film of current aluminium oxide-silicon nitride, very nearly the same, but has higher
Fill factor, illustrate that passivating film provided by the invention has had reached the passivation level of aluminium oxide-silicon nitride passive film.
In addition, solar cell provided by the invention has compared with the solar cell at present with common Al-BSF
Higher to open pressure and short circuit current, the transfer efficiency of solar cell can improve 1%-2%.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, it will be understood by those of ordinary skill in the art that：Its according to
So can with technical scheme described in the above embodiments is modified, either to which part or all technical features into
Row equivalent replacement；And these modifications or replacements, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of solar cell inactivating film, which is characterized in that including the high work function semiconductor material layer set gradually and nitrogen
SiClx layer, the high work function semiconductor material layer with cell matrix for contacting.
2. solar cell inactivating film according to claim 1, which is characterized in that in high work function semiconductor material layer
The work function of semi-conducting material is more than the work function of p-type silicon；
Preferably, the work function of the semi-conducting material in high work function semiconductor material layer is more than 5eV；
Preferably, high work function semi-conducting material is transition metal oxide.
3. solar cell inactivating film according to claim 2, which is characterized in that the transition metal oxide includes oxygen
Change tungsten, vanadium oxide, zirconium oxide or one kind in molybdenum oxide or at least two combination.
4. according to claim 1-3 any one of them solar cell inactivating films, which is characterized in that the high work function is partly led
The thickness of body material layer is 5-100nm.
5. according to claim 1-3 any one of them solar cell inactivating films, which is characterized in that the thickness of the silicon nitride layer
Degree is 10-150nm.
6. a kind of passivating back solar cell, which is characterized in that any including cell matrix, back electrode and claim 1-5
Passivating film described in, the passivating film is between the cell matrix and the back electrode, and the passivating film is equipped with and opens
Bore region, the back electrode penetrate through the opening area and are contacted with the cell matrix.
7. passivating back solar cell according to claim 6, which is characterized in that the cell matrix is P-type wafer.
8. passivating back solar cell according to claim 6, which is characterized in that the cell matrix front is equipped with nitrogen
SiClx antireflective film.
9. a kind of preparation method of claim 6-8 any one of them passivating back solar cell, which is characterized in that in electricity
The pond matrix back side is sequentially prepared passivating film and back electrode, obtains the passivating back solar cell.
10. preparation method according to claim 9, which is characterized in that use hot evaporation, atomic layer deposition or magnetron sputtering
The high work function semiconductor material layer of passivating film is prepared at the cell matrix back side in technique；
Preferably, the evaporation rate during being deposited is 0.1-10A/s；
Preferably, the silicon nitride of passivating film is prepared in the high work function semi-conducting material layer surface using depositing operation
Layer.
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| CN109786503A (en) * | 2018-12-29 | 2019-05-21 | 浙江师范大学 | The method that monocrystalline silicon surface is passivated with molybdenum oxide |
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