CN105742378A - Metallization method of N-type solar cell, cell, module and system - Google Patents
Metallization method of N-type solar cell, cell, module and system Download PDFInfo
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- CN105742378A CN105742378A CN201610231739.2A CN201610231739A CN105742378A CN 105742378 A CN105742378 A CN 105742378A CN 201610231739 A CN201610231739 A CN 201610231739A CN 105742378 A CN105742378 A CN 105742378A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001465 metallisation Methods 0.000 title abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 238000007639 printing Methods 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000000149 penetrating effect Effects 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 52
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 47
- 239000012528 membrane Substances 0.000 claims description 30
- 239000002002 slurry Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000008199 coating composition Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001035 drying Methods 0.000 description 7
- 230000001105 regulatory effect Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a metallization method of an N-type solar cell, the cell, a module and a system. The metallization method of the N-type solar cell comprises the following steps of forming a groove-shaped structure penetrating through a passivation anti-reflection film on the front surface of an N-type silicon-crystal substrate after processing the N-type silicon-crystal substrate; printing a back-surface electrode on the back surface of the N-type silicon-crystal substrate; printing aluminum paste on the groove-shaped structure to form a front-surface auxiliary grid; printing aluminum-doping silver paste or silver paste to form a front-surface main grid; and sintering the front-surface main grid to obtain the N-type solar cell. The metallization method has the advantages that during the metallization on the front surface of the N-type solar cell, the main grid line uses the silver-containing paste, and thus, the welding requirement can be met better; the auxiliary grid line uses the aluminum paste, thus, the auxiliary grid line and a p+ doping surface can be in excellent ohmic contact, and the production cost brought by the paste also can be greatly reduced.
Description
Technical field
The present invention relates to area of solar cell, particularly to the method for metallising of a kind of N-type solaode and battery and assembly, system.
Background technology
Along with the development of photovoltaic technology, photovoltaic cell efficient, high stability, low cost will become the main product that photovoltaic market is pursued.And N-type solar energy solar cell has conversion efficiency height, photo attenuation is low, good stability, cost performance high, also there is generating electricity on two sides simultaneously, be suitable for the advantage such as architecture-integral and right angle setting, photovoltaic market is subject to more and more attention.
Modal N-type solar battery structure is front is p+ doped layer, and matrix is N-type silicon, and the back side is n+ doped layer.Its metallization is generally adopted two-sided H type metal grid lines structure, and aluminum paste is mixed in the printing of p+ face, n+ face printing silver slurry.Why use in p+ face and mix aluminum paste, be because following two reasons: 1) it is to form good Ohmic contact.For p+ type doping surfaces, the silicon of trivalent aluminium and p+ doping has less contact resistance, can be higher if using fine silver to starch contact resistance.2) in order to meet welding requirements.Cell piece must weld in the process be packaged into assembly, so metal electrode have to meet this requirement of solderability, stanniferous welding firmly can weld with silver, but cannot be carried out good welding on aluminum surface.Therefore, in order to meet Ohmic contact and welding performance the two requirement simultaneously, it is typically in the use of p+ face and mixes aluminum paste.But it is higher to mix the silver content in aluminum paste, its cost is in fact equally matched with fine silver slurry.There is presently no the method for metallising of a kind of effective p+ type doping surfaces, while meeting low ohm contact resistance and superior weldability, use containing silver paste can be greatly reduced again.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that the method for metallising of a kind of N-type solaode and battery and assembly, system.The electrode that the method for metallising of the present invention is obtained, can meet the low ohm contact resistance with p+ doped region, has again the solderable performance of excellence, and using thus reduce the production cost of cell piece containing silver paste can be greatly reduced again simultaneously.
A kind of method for metallising of the N-type solaode of the present invention, its technical scheme is:
The method for metallising of a kind of N-type solaode, processes N-type crystalline silicon matrix, and the front surface at N-type crystalline silicon matrix forms p+ doped region from inside to outside and front surface passivated reflection reducing membrane successively；Back surface at N-type crystalline silicon matrix forms n+ doped region from inside to outside and back surface passivation film successively；Front surface at N-type crystalline silicon matrix forms the groove-like structure penetrating passivated reflection reducing membrane, and the back surface at N-type crystalline silicon matrix uses silver slurry printed back electrode；Then printing aluminium paste in groove-like structure and form front pair grid, aluminum paste is mixed in printing afterwards or silver slurry forms front main grid, obtains N-type solaode after sintering.
Wherein, the front surface of N-type crystalline silicon matrix includes the multiple groove-like structure penetrating passivated reflection reducing membrane, and multiple groove-like structure are parallel to each other.
Wherein, the method for the groove-like structure penetrating passivated reflection reducing membrane in the front surface formation of N-type crystalline silicon matrix is to use laser instrument etching method or slurry etching method；The step of slurry etching method is for printing etching slurry post-drying, and the time of drying is 1-10 minute, is put into the etching slurry removing remnants in cleaning equipment and carries out cleaning, drying by the n type single crystal silicon matrix after drying.
Wherein, the sintering peak temperature sintering N-type solaode is not higher than 900 DEG C.
Present invention also offers a kind of N-type solaode, including N-type crystalline silicon matrix, the front surface of N-type crystalline silicon matrix includes p+ doped region from inside to outside and front surface passivated reflection reducing membrane successively；The back surface of N-type crystalline silicon matrix includes n+ doped region from inside to outside and back surface passivation film successively；The back surface of N-type crystalline silicon matrix includes backplate, and the front surface of N-type crystalline silicon matrix includes penetrating the groove-like structure of passivated reflection reducing membrane, front pair grid and front main grid, and front pair grid are filled in groove-like structure and form Ohmic contact with described p+ doped region.
Wherein, front pair grid are aluminum front pair grid, and front main grid is silver front main grid or aerdentalloy front main grid.
Wherein, backplate is the H type grid line being made up of back side main grid and back side pair grid, and the live width of back side main grid is 0.5-3mm, and the live width of back side pair grid is 20-60 μm.
Wherein, the width of groove-like structure is 20-60 μm.
Wherein, passivated reflection reducing membrane is SiO2、SiNxOr Al2O3One or more in deielectric-coating, passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.
Wherein, the thickness of N-type crystalline silicon matrix is 50-300 μm；The doping depth of p+ doped region is 0.5-2.0 μm；The thickness of passivated reflection reducing membrane is 70-110nm；The thickness of passivating film is for being not less than 20nm；The doping depth of n+ doped region is 0.5-2.0 μm.
Wherein, groove-like structure be shaped as continuous print line-like structures, discrete line-like structures or discrete round point shape structure.
Present invention also offers a kind of N-type solar module, including the front layer material from top to bottom set gradually, encapsulating material, N-type solaode, encapsulating material, backsheet, N-type solaode is above-mentioned a kind of N-type solaode.
Present invention also offers a kind of N-type solar cell system, including the N-type solar module of one or more than one series connection, N-type solar module is above-mentioned a kind of N-type solar module.
The enforcement of the present invention includes techniques below effect:
The technological merit of the present invention is mainly reflected in: in the metallization of N-type double-side cell front surface, and main gate line uses silver slurry, so can meet welding requirements well；Secondary grid line uses aluminium paste, so can form excellent Ohmic contact with p+ doping surfaces, can greatly reduce again the production cost that slurry brings.It is said that in general, the silver-colored consumption of secondary grid line probably accounts for about the 60-80% of total burn-off, so the present invention is compared to existing technology, it is possible to reduce the about front silver consumption of 60-80%.
Accompanying drawing explanation
Fig. 1 is the battery structure schematic cross-section after the method for metallising step (1) of a kind of N-type solaode of the embodiment of the present invention.
Fig. 2 is the battery structure schematic cross-section after the method for metallising step (2-1) of a kind of N-type solaode of the embodiment of the present invention 2.
Fig. 3 is the method for metallising embodiment 1 step (2) of a kind of N-type solaode of embodiment of the present invention battery structure schematic cross-section afterwards and after embodiment 2 step (2-2).
Fig. 4 is the battery structure schematic cross-section after the method for metallising step (3) of a kind of N-type solaode of the embodiment of the present invention.
Fig. 5 is the battery structure schematic cross-section after the method for metallising step (4) of a kind of N-type solaode of the embodiment of the present invention.
Fig. 6 is the battery structure schematic cross-section after the method for metallising step (5) of a kind of N-type solaode of the embodiment of the present invention.
Fig. 7 be a kind of N-type solaode of the embodiment of the present invention method for metallising in through fluting after continuous lines list structure schematic diagram.
Fig. 8 be a kind of N-type solaode of the embodiment of the present invention method for metallising in through fluting after discontinuous line-like structures schematic diagram.
Fig. 9 be a kind of N-type solaode of the embodiment of the present invention method for metallising in through fluting after discontinuous round point shape structural representation.
Figure 10 be a kind of N-type solaode of the embodiment of the present invention method for metallising in the discontinuous round point shape structural representation of Heterogeneous Permutation after fluting.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described embodiment is intended merely to facilitate the understanding of the present invention, and it does not play any restriction effect.
Embodiment 1
Shown in Fig. 1, Fig. 3 to Fig. 6, the method for metallising of a kind of N-type solaode in the present embodiment comprises the steps:
(1) as it is shown in figure 1, N-type double-side cell before preparation metallization, including N-type crystalline silicon matrix 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 from inside to outside and front surface passivated reflection reducing membrane 14 successively；The back surface of N-type crystalline silicon matrix includes n+ doped region 16 from inside to outside and back surface passivation film 18 successively.Wherein the passivated reflection reducing membrane 14 of front surface is SiO2, SiNx or Al2O3In deielectric-coating one or more, the passivating film 18 of back surface is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of N-type crystalline silicon matrix 10 is 50-300 μm；The doping depth of p+ doped region 12 is 0.5-2.0 μm；The thickness of front surface passivated reflection reducing membrane 14 is 70-110nm；The thickness of back surface passivation film 18 is for being not less than 20nm；The doping depth of n+ doped region 16 is 0.5-2.0 μm.
(2) as it is shown on figure 3, use laser instrument to slot on the passivated reflection reducing membrane 14 of front surface form groove-like structure, it is ensured that it completely penetrates through passivated reflection reducing membrane 14.Groove-like structure be shaped as continuous print line-like structures (as shown in Figure 7), its width is 20-60um, and length is 154mm.These continuous lines are parallel to each other, and spacing 1.95mm arranges 80 altogether.Preferably, the shape of groove-like structure can be discrete line-like structures (as shown in Figure 8), discrete round point shape structure (as shown in Figure 9).Discrete line-like structures and discrete round point shape structure can be well-regulated array or random array (as shown in Figure 10).Discrete lines in discrete line-like structures can be horizontal well-regulated array, it is also possible to is longitudinal well-regulated array.
(3), as shown in Figure 4, back surface at N-type crystalline silicon matrix 10 uses silver slurry print electrode and dry, its electrode pattern be shaped as H type grid line, wherein back side main grid 22 live width is 0.5-3mm, long 154mm, spaced set 4, back side pair grid 26 live width is 20-60um, and long 154mm is parallel to each other, spacing is 1.55mm, arranges 100 altogether.
(4) as it is shown in figure 5, use aluminium paste printing front pair grid 24 at the front surface of N-type crystalline silicon matrix 10 and dry, front pair grid 24 width is 20-60um, and length is 154mm, parallel to each other, and spacing 1.95mm arranges 80 altogether.When printing, the front pair grid 24 after printing and the grooved pattern in step (2) must be made to be completely superposed.
(5), as shown in Figure 6, the front surface at N-type crystalline silicon matrix 10 uses silver slurry printing front main grid 20 and dries, front main grid 20 live width 0.5-3mm, and the present embodiment adopts 1mm, long 154mm, spaced set 4.The printing weight in wet base recording silver slurry is 20-50 milligram.
(6), by the n type single crystal silicon matrix 10 after step (5) process transmitting and be sintered into belt sintering stove, sintering peak temperature is 900 DEG C.Namely the making of N-type solaode is completed after sintering.
Embodiment 2
Referring to shown in Fig. 1 to Fig. 6, the method for metallising of a kind of N-type solaode in the present embodiment comprises the steps:
(1) as it is shown in figure 1, N-type double-side cell before preparation metallization, including N-type crystalline silicon matrix 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 from inside to outside and front surface passivated reflection reducing membrane 14 successively；The back surface of N-type crystalline silicon matrix includes n+ doped region 16 from inside to outside and back surface passivation film 18 successively.Wherein the passivated reflection reducing membrane 14 of front surface is SiO2, SiNx or Al2O3In deielectric-coating one or more, the passivating film 18 of back surface is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of N-type crystalline silicon matrix 10 is 50-300 μm；The doping depth of p+ doped region 12 is 0.5-2.0 μm；The thickness of front surface passivated reflection reducing membrane is 70-110nm；The thickness of back surface passivation film 18 is for being not less than 20nm；The doping depth of n+ doped region 16 is 0.5-2.0 μm.
(2-1) as in figure 2 it is shown, print etching slurry 40 drying at the front surface of N-type crystalline silicon matrix 10.The effect of etching slurry 40 is etching front surface passivated reflection reducing membrane 14.Printed patterns be shaped as lines parallel to each other, its width is 20-60um, and length is 154mm, spacing 1.95mm, arranges 80 altogether.Drying time is 1-10 minute, it is ensured that etch away front surface passivated reflection reducing membrane 14 completely.
(2-2) as it is shown on figure 3, the n type single crystal silicon matrix 10 after step (2-1) being processed is put into the etching slurry 40 removing remnants in cleaning equipment and carries out cleaning, drying.Can according to circumstances be aided with ultrasonic raising cleaning performance.
(3), as shown in Figure 4, back surface at N-type crystalline silicon matrix 10 uses silver slurry print electrode and dry, its electrode pattern be shaped as H type grid line, wherein back side main grid 22 live width is 0.5-3mm, long 154mm, spaced set 4, back side pair grid 26 live width is 20-60um, and long 154mm is parallel to each other, spacing is 1.55mm, arranges 100 altogether.
(4) as it is shown in figure 5, use aluminium paste printing front pair grid 24 at the front surface of N-type crystalline silicon matrix 10 and dry, front pair grid 24 width is 40-80um, and length is 154mm, parallel to each other, and spacing 1.95mm arranges 80 altogether.When printing, the front pair grid 24 after printing and the pattern after the etching in step (2) must be made to be completely superposed.
(5), as shown in Figure 6, the front surface at N-type crystalline silicon matrix 10 uses silver slurry printing front main grid 20 and dries, front main grid 20 live width 0.5-3mm, and the present embodiment adopts 1mm, long 154mm, spaced set 4.The printing weight in wet base recording silver slurry is 20-50 milligram.
(6), by the n type single crystal silicon matrix 10 after step (5) process transmitting and be sintered into belt sintering stove, sintering peak temperature is 900 DEG C.Namely the making of N-type solaode is completed after sintering.
Adopting the method for metallising of existing N-type solaode front surface, the silver of its front-side metallization slurry consumption is about 100-150 milligram, and adopts the front-side metallization method of embodiment 1 and embodiment 2, and the silver slurry consumption of its front-side metallization is 20-50 milligram.According to the words that the market price of metal current slurry calculates, in embodiment 1 and embodiment 2 the front-side metallization cost of every a piece of cell piece compared to existing technology will low general 0.3-0.5 unit, for the production line producing 50MW per year, the annual present invention can reduce the metallization cost 300-500 ten thousand yuan of N-type solaode front surface.
Shown in Figure 6, the present embodiment additionally provides a kind of N-type solaode, and including N-type crystalline silicon matrix 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 from inside to outside and front surface passivated reflection reducing membrane 14 successively；The back surface of N-type crystalline silicon matrix 10 includes n+ doped region 16 from inside to outside and back surface passivation film 18 successively；The back surface of N-type crystalline silicon matrix 10 includes backplate, the front surface of N-type crystalline silicon matrix 10 includes penetrating the groove-like structure of passivated reflection reducing membrane 14, front pair grid 24 and front main grid 20, and front pair grid 24 are filled in groove-like structure and form Ohmic contact with described p+ doped region.Front pair grid 24 are aluminum, and front main grid 20 is perpendicular to front pair grid 24, and front main grid 20 is silver or aerdentalloy.Backplate is the H type grid line being made up of back side main grid 22 and back side pair grid 26, and the live width of back side main grid 22 is 0.5-3mm, and the live width of back side pair grid 26 is 20-60 μm.The width of groove-like structure is 20-60 μm.
Groove-like structure be shaped as continuous print line-like structures (as shown in Figure 7), discrete line-like structures (as shown in Figure 8), discrete round point shape structure (as shown in Figure 9).Discrete line-like structures and discrete round point shape structure can be well-regulated array or random array (as shown in Figure 10)；The diameter of round dot is 30-300 micron.Discrete lines in discrete line-like structures can be horizontal well-regulated array, it is also possible to is longitudinal well-regulated array.Preferably, passivated reflection reducing membrane 14 is SiO2、SiNxOr Al2O3One or more in deielectric-coating, passivating film 18 is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.The thickness of N-type crystalline silicon matrix is 50-300 μm；The doping depth of p+ doped region 12 is 0.5-2.0 μm；The thickness of passivated reflection reducing membrane 14 is 70-110nm；The thickness of passivating film 18 is for being not less than 20nm；The doping depth of n+ doped region 16 is 0.5-2.0 μm.
The present embodiment additionally provides a kind of N-type solar module, and including the front layer material from top to bottom connected, encapsulating material, N-type solaode, encapsulating material, backsheet, N-type solaode is above-mentioned a kind of N-type solaode.The structure and working principle of the N-type solar module of the present embodiment uses technology well known in the art, and the improvement of N-type solar module provided by the invention only relates to above-mentioned N-type solaode, other parts is not modified.Therefore N-type solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to N-type solar module repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize the N-type solar module of the present invention.
The present embodiment additionally provides a kind of N-type solar cell system, and including the N-type solar module of one or more than one series connection, N-type solar module is above-mentioned a kind of N-type solar module.The structure and working principle of the N-type solar cell system of the present embodiment uses technology well known in the art, and the improvement of N-type solar cell system provided by the invention only relates to above-mentioned N-type solaode, other parts is not modified.Therefore N-type solaode and preparation method thereof is only described in detail by this specification, miscellaneous part and operation principle to N-type solar cell system repeat no more here.Those skilled in the art, in the content basis that this specification describes, can realize the N-type solar cell system of the present invention.
Finally should be noted that; above example is only in order to illustrate technical scheme; but not limiting the scope of the invention; although having made to explain to the present invention with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent replacement, without deviating from the spirit and scope of technical solution of the present invention.
Claims (13)
1. the method for metallising of a N-type solaode, it is characterised in that: N-type crystalline silicon matrix is processed, and the front surface at N-type crystalline silicon matrix forms p+ doped region from inside to outside and front surface passivated reflection reducing membrane successively；Back surface at N-type crystalline silicon matrix forms n+ doped region from inside to outside and back surface passivation film successively；Front surface at N-type crystalline silicon matrix forms the groove-like structure penetrating passivated reflection reducing membrane, and the back surface at N-type crystalline silicon matrix uses silver slurry printed back electrode；Then printing aluminium paste in groove-like structure and form front pair grid, aluminum paste is mixed in printing afterwards or silver slurry forms front main grid, obtains N-type solaode after sintering.
2. the method for metallising of a kind of N-type solaode according to claim 1, it is characterised in that: the front surface of N-type crystalline silicon matrix includes the multiple groove-like structure penetrating passivated reflection reducing membrane, and multiple described groove-like structure are parallel to each other.
3. the method for metallising of a kind of N-type solaode according to claim 1, it is characterised in that: it is use laser instrument etching method or slurry etching method that the front surface at N-type crystalline silicon matrix forms the method for the groove-like structure penetrating passivated reflection reducing membrane.
4. the method for metallising of a kind of N-type solaode according to claim 1, it is characterised in that: the sintering peak temperature of sintering N-type solaode is not higher than 900 DEG C.
5. a N-type solaode, including N-type crystalline silicon matrix, the front surface of described N-type crystalline silicon matrix includes p+ doped region from inside to outside and front surface passivated reflection reducing membrane successively；The back surface of described N-type crystalline silicon matrix includes n+ doped region from inside to outside and back surface passivation film successively；It is characterized in that: the back surface of described N-type crystalline silicon matrix includes backplate, the front surface of described N-type crystalline silicon matrix includes penetrating the groove-like structure of described passivated reflection reducing membrane, front pair grid and front main grid, and described front pair grid are filled in described groove-like structure and form Ohmic contact with described p+ doped region.
6. a kind of N-type solaode according to claim 5, it is characterised in that: described front pair grid are aluminum front pair grid, and described front main grid is silver front main grid or aerdentalloy front main grid.
7. a kind of N-type solaode according to claim 5, it is characterised in that: described backplate is the H type grid line being made up of back side main grid and back side pair grid, and the live width of described back side main grid is 0.5-3mm, and the live width of described back side pair grid is 20-60 μm.
8. a kind of N-type solaode according to claim 5, it is characterised in that: the width of described groove-like structure is 20-60 μm.
9. a kind of N-type solaode according to claim 5, it is characterised in that: described passivated reflection reducing membrane is SiO2、SiNxOr Al2O3One or more in deielectric-coating, described passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition.
10. a kind of N-type solaode according to claim 5, it is characterised in that: the thickness of described N-type crystalline silicon matrix is 50-300 μm；The doping depth of p+ doped region is 0.5-2.0 μm；The thickness of described passivated reflection reducing membrane is 70-110nm；The thickness of described passivating film is for being not less than 20nm；The doping depth of described n+ doped region is 0.5-2.0 μm.
11. according to the arbitrary described a kind of N-type solaode of claim 5～10, it is characterised in that: described groove-like structure be shaped as continuous print line-like structures, discrete line-like structures or discrete round point shape structure.
12. a N-type solar module, including the front layer material from top to bottom set gradually, encapsulating material, N-type solaode, encapsulating material, backsheet, it is characterised in that: described N-type solaode is the arbitrary described a kind of N-type solaode of claim 5-11.
13. a N-type solar cell system, including the N-type solar module of one or more than one series connection, it is characterised in that: described N-type solar module is a kind of N-type solar module described in claim 12.
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