CN109004046A - A kind of solar battery anode printing technology - Google Patents
A kind of solar battery anode printing technology Download PDFInfo
- Publication number
- CN109004046A CN109004046A CN201810894022.5A CN201810894022A CN109004046A CN 109004046 A CN109004046 A CN 109004046A CN 201810894022 A CN201810894022 A CN 201810894022A CN 109004046 A CN109004046 A CN 109004046A
- Authority
- CN
- China
- Prior art keywords
- halftone
- silicon
- silver paste
- silicon wafer
- belt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007639 printing Methods 0.000 title claims abstract description 21
- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims abstract description 11
- 238000010422 painting Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 5
- 238000007790 scraping Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000000608 laser ablation Methods 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003181 co-melting Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Screen Printers (AREA)
Abstract
The present invention relates to a kind of solar battery anode printing technologies, halftone, scraper and dressing knife are installed first in place, then high-purity silver paste used in being added into halftone, silicon wafer is sent under laser emitter from preceding road by belt, the silicon nitride film of silicon chip surface is removed using laser energy, silicon wafer is sent to printing table by belt, slurry is covered by screen painting figure whole face by dressing knife after print head decline, scraper pushes overstocked slurry and prints by halftone hollow-out part to silicon chip surface.The present invention uses the silicon nitride film of laser ablation silicon chip surface first before printing, so that Argent grain when sintering in silver paste can be contacted directly with silicon substrate, improves content silver-colored in silver paste to reach, reduces the purpose of grid line bulk resistor.
Description
Technical field
The present invention relates to technical field of solar batteries, especially a kind of solar battery anode printing technology.
Background technique
In existing solar battery anode printing technology, usually using screen painting, raw material is leaded organic glass
Slurry is covered screen painting by dressing knife by the slurry of glass, and figure whole face scraper pushes overstocked slurry and passes through halftone hollow out
For printed portions to silicon chip surface, silicon wafer after printing enters sintering furnace by belt-conveying, and when sintering, silver paste temperature is heated to one
Determine temperature, organic glass starts the SiNx layer on etching silicon wafer surface, contacts the Argent grain in silver paste with silicon substrate, forms silver-colored silicon
It is co-melting.In the traditional handicraft, frit is affected by temperature the corrosion of SiNx layer larger first, secondly contains frit in silver paste
Lead to the reduction of silver powder content, causes Ohmic contact between grid line and silicon wafer poor, contain glass powder in silver paste used, reduce
The bulk resistor of the silver content of silver paste, silicon wafer grid line is higher.
Summary of the invention
The technical problem to be solved by the present invention is the present invention, which provides one kind, to be had in order to overcome the deficiencies in the existing technology
Effect reduces the solar battery anode printing technology of silicon wafer grid line bulk resistor.
The technical solution adopted by the present invention to solve the technical problems is: a kind of solar battery anode printing technology, tool
There are following steps:
A, halftone is mounted on screen frame, screen frame is mounted on board；
B, halftone contraposition is carried out by the loci that halftone carries on board；
C, scraping article is mounted on scraper, scraper and dressing knife is mounted on the print head of board；
D, high-purity silver paste used in being added in halftone, the silver content of the silver paste is 98%, and does not contain lead and glass
Glass powder；
E, silicon wafer is sent under laser emitter from preceding road by belt, and laser will using certain energy in silicon chip surface
The removal of silicon chip surface silicon nitride film；
F, silicon wafer is sent to printing table by belt；
G, halftone drops to designated position；
H, print head declines, and slurry is covered screen painting figure whole face by dressing knife, scraper, which pushes, overstocks slurry
It is printed by halftone hollow-out part to silicon chip surface；
I, it is lifted on halftone, silicon wafer goes out printing machine platform by belt-conveying.
The beneficial effects of the present invention are: the present invention uses the silicon nitride film of laser ablation silicon chip surface first before printing,
So that Argent grain when sintering in silver paste can be contacted directly with silicon substrate, content silver-colored in silver paste is improved to reach, is reduced
The purpose of grid line bulk resistor.
Specific embodiment
A kind of solar battery anode printing technology, has follow steps:
A, halftone is mounted on screen frame, screen frame is mounted on board；
B, halftone contraposition is carried out by the loci that halftone carries on board；
C, scraping article is mounted on scraper, scraper and dressing knife is mounted on the print head of board；
D, high-purity silver paste used in being added in halftone, the silver content of the silver paste is 98%, and does not contain lead and glass
Glass powder；
E, silicon wafer is sent under laser emitter from preceding road by belt, and laser will using certain energy in silicon chip surface
The removal of silicon chip surface silicon nitride film；
F, silicon wafer is sent to printing table by belt；
G, halftone drops to designated position；
H, print head declines, and slurry is covered screen painting figure whole face by dressing knife, scraper, which pushes, overstocks slurry
It is printed by halftone hollow-out part to silicon chip surface；
I, it is lifted on halftone, silicon wafer goes out printing machine platform by belt-conveying.
The present invention uses the silicon nitride film of laser ablation silicon chip surface first before printing, subsequent when being sintered, due to
Surface nitrogen SiClx has removed, and the Argent grain in silver paste can be contacted directly with silicon substrate, improves silver-colored in silver paste contain to reach
Amount reduces the purpose of silicon wafer grid line bulk resistor.
Grid line and silicon wafer can be made to form more good Ohmic contact without lead in silver paste simultaneously, be not necessarily to contain glass in silver paste
Glass powder improves the silver content of silver paste, reduces the bulk resistor of grid line.
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property range is not limited to the contents of the specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (2)
1. a kind of solar battery anode printing technology, it is characterized in that: having follow steps:
A, halftone is mounted on screen frame, screen frame is mounted on board；
B, halftone contraposition is carried out by the loci that halftone carries on board；
C, scraping article is mounted on scraper, scraper and dressing knife is mounted on the print head of board；
D, high-purity silver paste used in being added in halftone；
E, silicon wafer is sent under laser emitter from preceding road by belt, and laser uses certain energy by silicon wafer in silicon chip surface
Surfaces nitrided silicon fiml removal；
F, silicon wafer is sent to printing table by belt；
G, halftone drops to designated position；
H, print head declines, and slurry is covered screen painting figure whole face by dressing knife, scraper pushes overstocked slurry and passes through
Halftone hollow-out part is printed to silicon chip surface；
I, it is lifted on halftone, silicon wafer goes out printing machine platform by belt-conveying.
2. solar battery anode printing technology as described in claim 1, it is characterized in that: the silver content of the silver paste is
98% and do not contain lead and glass powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810894022.5A CN109004046A (en) | 2018-08-08 | 2018-08-08 | A kind of solar battery anode printing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810894022.5A CN109004046A (en) | 2018-08-08 | 2018-08-08 | A kind of solar battery anode printing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109004046A true CN109004046A (en) | 2018-12-14 |
Family
ID=64595165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810894022.5A Withdrawn CN109004046A (en) | 2018-08-08 | 2018-08-08 | A kind of solar battery anode printing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109004046A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110481146A (en) * | 2019-08-09 | 2019-11-22 | 江苏日托光伏科技股份有限公司 | Quick fixed large scale MWT battery piece conducting resinl printing equipment and printing process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623564A (en) * | 2012-03-30 | 2012-08-01 | 中山大学 | Method for producing crystalline silicon solar cell with laser grooved positive electrode |
| CN103085516A (en) * | 2011-10-31 | 2013-05-08 | 浚鑫科技股份有限公司 | Spreading method for solar battery screen printing |
| CN105742378A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Metallization method of N-type solar cell, cell, module and system |
| CN106158991A (en) * | 2016-08-02 | 2016-11-23 | 苏州金瑞晨科技有限公司 | A kind of N-type cell applying high-temperature diffusion process to prepare |
-
2018
- 2018-08-08 CN CN201810894022.5A patent/CN109004046A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103085516A (en) * | 2011-10-31 | 2013-05-08 | 浚鑫科技股份有限公司 | Spreading method for solar battery screen printing |
| CN102623564A (en) * | 2012-03-30 | 2012-08-01 | 中山大学 | Method for producing crystalline silicon solar cell with laser grooved positive electrode |
| CN105742378A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Metallization method of N-type solar cell, cell, module and system |
| CN106158991A (en) * | 2016-08-02 | 2016-11-23 | 苏州金瑞晨科技有限公司 | A kind of N-type cell applying high-temperature diffusion process to prepare |
Non-Patent Citations (1)
| Title |
|---|
| 马天琳: "《太阳能电池生产技术》", 30 April 2015 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110481146A (en) * | 2019-08-09 | 2019-11-22 | 江苏日托光伏科技股份有限公司 | Quick fixed large scale MWT battery piece conducting resinl printing equipment and printing process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU643550B2 (en) | Method of applying metallized contacts to a solar cell | |
| CN104835723B (en) | Form the composition and method of p-diffusion layer, and the method for preparing photovoltaic cell | |
| US20170054043A1 (en) | Solar cell superfine electrode transfer thin film, manufacturing method and application method thereof | |
| CN110289120A (en) | A kind of preparation and packaging method of complex sintered silver-colored preformed sheet | |
| EP1108804A3 (en) | Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device | |
| EP3494184B1 (en) | Formulations and processes for producing highly conductive copper patterns | |
| CN102623564A (en) | Method for producing crystalline silicon solar cell with laser grooved positive electrode | |
| CN106827789A (en) | It is a kind of to be applied to various bottle-type and the silkscreen system with taper adjustment | |
| CN103280517A (en) | Method for LED co-crystallizing technique | |
| CN109004046A (en) | A kind of solar battery anode printing technology | |
| CN105552234A (en) | Perovskite photovoltaic composite material for 3D printing forming and preparation method thereof | |
| US20160072137A1 (en) | Method for producing a solder glass green seal | |
| CN105367128B (en) | It is a kind of to be suitable for the preparation technology that alumina ceramic face applies copper metallization | |
| JP2007062079A (en) | Screen process printing method and solar cell element | |
| CN111319369A (en) | Twice screen printing method for semiconductor device | |
| CN103489932B (en) | A kind of nano-silicon phosphorus slurry and its preparation method and application | |
| CN104868009B (en) | The manufacture method of solar cell | |
| CN206533608U (en) | A kind of high impedance multilayer insulation metal base circuit board | |
| CN110350054A (en) | A kind of printing process of solar energy crystal-silicon battery slice | |
| CN102709394B (en) | Process for preparing cathode grid line of solar cell | |
| CN109094228A (en) | A kind of gold stamping bat printing marble paper of easy fired ink embossment and preparation method thereof | |
| CN106684206A (en) | Novel method for printing solar cell slurry | |
| CN107690232A (en) | Method for plugging for printed circuit board | |
| CN205112617U (en) | Solar cell positive electrode screen printing machine | |
| KR101053913B1 (en) | Conductive paste composition and manufacturing method of electrode for solar cell using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181214 |
|
| WW01 | Invention patent application withdrawn after publication |