CN202084570U - Crystalline silicon solar cell - Google Patents
Crystalline silicon solar cell Download PDFInfo
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- CN202084570U CN202084570U CN 201120059862 CN201120059862U CN202084570U CN 202084570 U CN202084570 U CN 202084570U CN 201120059862 CN201120059862 CN 201120059862 CN 201120059862 U CN201120059862 U CN 201120059862U CN 202084570 U CN202084570 U CN 202084570U
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 22
- 229910003363 ZnMgO Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009647 facial growth Effects 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model discloses a crystalline silicon solar cell, which sequentially comprises an Al electrode, a back face ZnO base thin film layer, a p type Si base body layer, an n type Si diffusion layer, a front face ZnO base thin film layer and a Ag main electrode thick wire. The crystalline silicon solar cell has the advantages of high photoelectric conversion efficiency, high stability, simple process and low production cost; the performance of the crystalline silicon solar cell can be improved; and the service life of the crystalline silicon solar cell can be prolonged.
Description
Technical field
The utility model relates to solar cell, relates in particular to a kind of crystal silicon solar energy battery.
Background technology
Solar energy is inexhaustible, nexhaustible green regenerative energy sources.Solar power generation is the new forms of energy industry that countries in the world are given special assistance to, and photovoltaic generation industry in the world's was all with the rapid growth of 30% speed in recent years.Global solar battery production capacity reached 12GW in 2010, and wherein crystal silicon solar energy battery surpasses 9GW, accounts for more than 3/4ths of whole market.The photoelectric conversion efficiency average out to about 17% of present crystal silicon solar energy battery, photovoltaic generation cost are 1.3～2.0 yuan/degree, and with respect to the civilian electricity price lattice, its cost is still too high, is difficult to generate electricity by way of merging two or more grid systems.Further reduce the solar cell power generation cost, effective method is no more than improving the conversion efficiency of battery.It is calculated that the every raising 1% of battery efficiency is equivalent to cost of electricity-generating and reduces by 7%.Compare with theoretical limit efficient, present crystal silicon solar energy battery efficient also has very big room for promotion.
Existing crystal silicon solar energy battery structure is relative with technological process simple.The basic structure of battery front side is: deposit SiN with the PECVD method on n type Si diffusion layer
xFilm is an antireflection layer, and Si is played passivation; Form the Ag grid electrode with silk screen print method again, be electrode before the battery.Solar cell has the requirement of two aspects to preceding electrode: one, can not block incident light and enter p-n junction to guarantee most of incident light, the covering surfaces of electrode amasss about 6～10% before the aperture plate at present, the effective area of solar cell is reduced, thereby conversion efficiency reduces, if further improve utilization of incident light, then need to reduce the size and the density of the preceding electrode of aperture plate; They are two years old, to sufficient collection be arranged to photo-generated carrier, use the result of the preceding electrode of aperture plate to be, photo-generated carrier must be done transverse movement on the p-n junction top layer, this has brought extra series resistance, has increased Dian – hole-recombination rate, and short circuit current and fill factor, curve factor are descended, if further improve the collection efficiency of charge carrier, then need to increase the size and the density of the preceding electrode of aperture plate.This is the requirement of two mutual contradictions, has greatly restricted the raising of crystal silicon solar energy battery photoelectric conversion efficiency.
The technology of cell backside is very simple, directly aluminium paste is printed on the whole back side, forms the battery back electrode behind the sintering.Because the silicon chip surface of cell backside does not have passivation, have a large amount of defect states to exist, so Dian – hole is very high to recombination rate, has reduced the photoelectric conversion efficiency of battery, becomes one of important bottleneck that influences battery performance.Backside passivation layer has important effect for increase battery efficiency, lifting battery performance.Thermal oxidation SiO traditionally
2Can carry out passivation to silicon face, but thermal oxidation SiO
2Be difficult to carry out the single face growth, can exert an influence, reduce device performance battery front side.SiN
xFilm can be used for the passivation to silicon, when still this film being applied to passivating back, owing to there be " ghost effect " (Parasitic Effect), can reduce Solar cell performance.Also the someone studies and uses Al
2O
3Film carries out passivating back, but still has " ghost effect ".And, SiO
2, SiN
x, Al
2O
3All be insulating material, can not conduct electricity, thereby can increase the series resistance of battery, limited its passivation.Thereby cell backside passivation layer technology still is an outstanding question so far.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, be to increase the photoelectric conversion efficiency of battery, promotes battery performance and a kind of novel crystal silicon solar cell is provided.
Crystal silicon solar energy battery of the present utility model comprises Al electrode, back side zno-based thin layer, p type Si base layer, n type Si diffusion layer, front zno-based thin layer and Ag main electrode thick line successively.
In the utility model, described front zno-based thin layer and back side zno-based thin layer are ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film.
Above-mentioned ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film can the H doping or H and B, Al, Ga, In, Sc, Y, Si, Ge, Sn, Ti, Zr, V, Nb, Cr, Mo, W, F, Cl, I, Ce, Dy and Er in the common formed transparent conductive film that mixes of one or more elements.
In the utility model, described front zno-based thin layer resistivity is 10
– 3～10
– 5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.Described back side zno-based thin layer resistivity is 10
– 1～10
– 5Ω cm, thickness are 10～5000 nanometers.
In the utility model, described Al electrode is wire electrode or point-like electrode.
The beneficial effect that the utility model compared with prior art has is:
1) on n type Si diffusion layer, directly deposit front zno-based thin layer, be transparent conductive film, can be simultaneously as electrode, antireflection layer and passivation layer before the battery.One, front zno-based thin layer as battery before electrode, substitute existing metal grid mesh electrode, thereby make the front of entire cell all become effective light-receiving area, reach the maximization of incident light utilance, photo-generated carrier need not be done transverse movement on the p-n junction top layer more simultaneously, improves its collection efficiency greatly, this scheme has solved the shortcoming of the preceding electrode of above-mentioned aperture plate metal fully, can significantly increase battery conversion efficiency; Its two, front zno-based thin layer is as antireflective coating, and has significant silicon face passivation and body passivation, thereby can be used as antireflection layer and passivation layer, substitutes SiN fully
xFilm, its reflection preventing ability and inactivating performance all are better than SiN
xFilm can improve the short circuit current and the open circuit voltage of battery, promotes battery performance; Its three, adopt front zno-based thin layer to substitute antireflective coating SiN in the present preparation flow
xWith front electrode two step process, can reach the integrated of antireflective coating and preceding electrode, significantly reduce product cost.
2) on p type Si base layer, directly deposit back side zno-based thin layer, can be used as passivation layer.One, the zno-based film is used for backside passivation layer, can effectively eliminate the silicon face attitude and the volume defect attitude of cell backside, good passivation effect, technology is simple, can reduce Dian – hole-recombination rate significantly, increases battery conversion efficiency; Its two because the introducing of zno-based film backside passivation layer, the cell backside silicon face has interface clearly, can improve the internal reflection rate of light, forms secondary and absorbs, and further increases the photoelectric conversion efficiency of battery; Its three, the zno-based thin layer has high conductivity, conducts electricity very well, and can not increase the series resistance of battery, helps promoting battery performance.
3) zno-based thin layer in front can be identical film with back side zno-based thin layer, can adopt with two-sided being coated with simultaneously of a kind of membrane deposition method to form, and technology maturation, technology is simple, and cost is low, the yields height.
4) adopt the needed production line of this novel crystal silicon solar cell, can need not to use PECVD and screen printing technique, compare, can significantly reduce production costs with existing technology.
5) compare with existing crystal silicon solar energy battery, this crystal silicon solar energy battery technology is simple, and photoelectric conversion efficiency significantly increases, and battery performance and stability are high, long service life.
Description of drawings
Fig. 1 is the structural representation of the utility model crystal silicon solar energy battery.
Embodiment
As shown in Figure 1, crystal silicon solar energy battery of the present utility model comprises Al electrode 1, back side zno-based thin layer 2, p type Si base layer 3, n type Si diffusion layer 4, front zno-based thin layer 5 and Ag main electrode thick line 6 successively.
Described front zno-based thin layer 5 and back side zno-based thin layer 2 comprise ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film, and formed transparent conductive film mixes for one or more elements among H doping or H and B, Al, Ga, In, Sc, Y, Si, Ge, Sn, Ti, Zr, V, Nb, Cr, Mo, W, F, Cl, I, Ce, Dy or the Er are common.
Described front zno-based thin layer 5 resistivity are 10
– 3～10
– 5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.Described back side zno-based thin layer 2 resistivity are 10
– 1～10
– 5Ω cm, thickness are 10～5000 nanometers.
Described Al electrode 1 is wire electrode or point-like electrode.
Embodiment 1:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize magnetically controlled sputter method, the common ZnO transparent conductive film that mixes of deposition H and Nb is front zno-based thin layer 5 on n type Si diffusion layer 4, and the common ZnO transparent conductive film that mixes of deposition H and Ga is back side zno-based thin layer 2 on p type Si base layer 3; Utilize method of evaporating vacuum evaporation Ag main electrode thick line 6 and Al electrode 1 respectively, adopt the mask technology during Ag main electrode thick line 6 depositions, earlier with the 2 etching perforates of back side zno-based thin layer, Al electrode 1 forms the point-like electrode before Al electrode 1 deposition.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 18 ~ 21%.
Embodiment 2:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize the CVD method, on n type Si diffusion layer 4 and p type Si base layer 3, two-sided H and the common ZnO transparent conductive film that mixes of Al of depositing simultaneously forms front zno-based thin layer 5 and back side zno-based thin layer 2, adopts the mask technology during back side zno-based thin layer 2 depositions; And then, adopting the mask technology during Ag main electrode thick line 6 depositions with method of evaporating difference vacuum evaporation Ag main electrode thick line 6 and Al electrode 1, Al electrode 1 forms wire electrode.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 18 ~ 22%.
Embodiment 3:
After 3 making herbs into wool of p type Si base layer, form n type Si diffusion layer 4 thereon by method of diffusion; Utilize magnetically controlled sputter method, on n type Si diffusion layer 4 and p type Si base layer 3, two-sided H and the common ZnMgO transparent conductive film that mixes of Ga of depositing simultaneously forms front zno-based thin layer 5 and back side zno-based thin layer 2, adopts the mask technology during back side zno-based thin layer 2 depositions; And then, adopting the mask technology during Ag main electrode thick line 6 depositions with method of evaporating difference vacuum evaporation Ag main electrode thick line 6 and Al electrode 1, Al electrode 1 forms wire electrode.Its photoelectric conversion efficiency of the crystal silicon solar energy battery of being produced is 19 ~ 23%.
Claims (5)
1. crystal silicon solar energy battery is characterized in that comprising successively Al electrode (1), back side zno-based thin layer (2), p type Si base layer (3), n type Si diffusion layer (4), front zno-based thin layer (5) and Ag main electrode thick line (6).
2. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described front zno-based thin layer (5) and back side zno-based thin layer (2) are ZnO, ZnMgO, ZnCdO, ZnBeO or ZnCaO film.
3. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described front zno-based thin layer (5) resistivity is 10
-3～10
-5Ω cm, transmission of visible light are greater than 85%, and thickness is 30～150 nanometers.
4. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described back side zno-based thin layer (2) resistivity is 10
-1～10
-5Ω cm, thickness are 10～5000 nanometers.
5. by the described crystal silicon solar energy battery of claim 1, it is characterized in that described Al electrode (1) is wire electrode or point-like electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120059862 CN202084570U (en) | 2011-03-09 | 2011-03-09 | Crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120059862 CN202084570U (en) | 2011-03-09 | 2011-03-09 | Crystalline silicon solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN202084570U true CN202084570U (en) | 2011-12-21 |
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ID=45345192
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120059862 Expired - Fee Related CN202084570U (en) | 2011-03-09 | 2011-03-09 | Crystalline silicon solar cell |
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|---|---|
| CN (1) | CN202084570U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057952A (en) * | 2016-08-22 | 2016-10-26 | 四川英发太阳能科技有限公司 | Novel crystalline silicon solar cell and preparation method thereof |
-
2011
- 2011-03-09 CN CN 201120059862 patent/CN202084570U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057952A (en) * | 2016-08-22 | 2016-10-26 | 四川英发太阳能科技有限公司 | Novel crystalline silicon solar cell and preparation method thereof |
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| GR01 | Patent grant | ||
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Granted publication date: 20111221 Termination date: 20140309 |