CN101692467A - Method for manufacturing high efficient two-sided P-shaped crystalline silicon solar cell based on silk-screen printing technique - Google Patents
Method for manufacturing high efficient two-sided P-shaped crystalline silicon solar cell based on silk-screen printing technique Download PDFInfo
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Abstract
The invention discloses a method for manufacturing a high efficient two-sided P-shaped crystalline silicon solar cell based on silk-screen printing technique. The preparation steps are: carrying out frontal phosphorous diffusion on the P-shaped silicon chip, growing a passivation layer and an antireflection layer, manufacturing a frontal electrode, carrying out back boron diffusion or partial boron diffusion on the P-shaped silicon chip, growing a passivation layer and an antireflection layer, and manufacturing a back electrode. The inventive method has simple manufacturing technique, low cost, small investment on equipment and high production efficiency, and most part of the manufacturing technique can be carried out on a common P-shaped conventional cell production line.
Description
Technical field
The present invention relates to the manufacture method of solar cell, particularly the manufacture method of two-sided crystal silicon solar energy battery.
Background technology
At present, traditional solar cell is to utilize P type crystalline silicon material, forms the pn knot in matrix front phosphorous diffusion, and the deposition antireflective film, and the back up aluminium paste is done back of the body field, has only the front to be subjected to " single face " solar cell of light.Consider that solar cell is a planar structure, be converted into electric energy if light also can enter to be absorbed in the cell body from cell backside, then the utilance of sunlight is that optoelectronic transformation efficiency will significantly improve.
The sunlight that solar battery surface receives is except direct component by solar radiation, also comprise the appreciable indirec radiation or the scattering radiation component that cause by scatterings such as air, dust, even at the weather of ceiling unlimited, the scattering radiation component also can account for 10～20% of total radiation that horizontal plane receives in daytime, at the weather of sunlight deficiency, this ratio also will increase.The thickness of conventional crystal silicon cell makes the light of positive incident have only long wavelength's luminous energy seldom to arrive back of the body near surface at present, and the scattered light that is incident upon cell backside contains abundanter short-wavelength light, the spectral response of short-wavelength light when being absorbed by battery is higher, mainly is absorbed in the body near back of the body surface.If cooperate corresponding process modification, under the prerequisite that does not reduce the front transformation efficiency, backplate is transformed into the little electrode pattern of shading area, make most of back surface incident light can enter in the cell body, be absorbed and be converted into electric energy that then the power output of battery will be significantly improved.
Iff being that deposition back side antireflective film and the shape that changes backplate satisfy the two-sided light that is subjected on traditional P type battery structure basis, " two-sided battery " like this causes its conversion efficiency very low because back of the body surface passivation is too poor and the contact problems of back electrode and silicon substrate.Solve this difficult problem in order to seek various approach, just begun the research of two-sided crystal silicon cell from the seventies abroad.The two-sided battery of successful volume production has the back of the body of Sunpower to contact the HIT battery (Fig. 2) of two-sided battery (Fig. 1), SANYO and the two-sided battery of P type (Fig. 3) of Hitachi at present.
The back of the body of Sunpower contact two-sided battery since its positive and negative electrode all overleaf, and the diffusion of different doping types will be carried out in the zone positive and negative electrode under, need repeatedly grow diffusion impervious layer and mask are slotted.In order to guarantee to leave between the dissimilar diffusion zones at interval, and the metal electrode in road, back is made drop in the corresponding diffusion zone, this structure is very high to the required precision of mask equipment, and needs electroplating device, and technology is very complicated.
And the HIT battery of SANYO is to carry out PECVD deposition intrinsic amorphous silicon membrane earlier on two surfaces of crystalline silicon substrate, difference PECVD deposits P type and N type hydrogenation non crystal silicon film on amorphous silicon membrane again, magnetron sputtering deposition antireflective film and conducting film then, and make positive and negative electrode by method for printing screen.From the technological process of HIT battery as can be seen, its cost had both comprised the main material in the crystal silicon cell industry--silicon material, needed to invest a series of very expensive membrane equipments again, and cost is higher.And the two-sided battery of Sunpower and SANYO is very high to the requirement of basis material, and their structure only is adapted at realizing on the higher N type silicon chip of minority carrier life time.
It is the boron diffusion back surface field two sides battery sheet (Biafacial Cell with Boron Diffused Back Surface Field) that is called as B3 battery sheet that the two sides that Hitachi has produced in batches is subjected to the light solar cell piece.Monocrystalline silicon substrate (p type), SiO is used in the two-sided making herbs into wool of its tow sides
2Do passivation and antireflective coating.The front is phosphorous diffusion, forms the n+p knot near positive; The back side is boron diffusion p+ layer, forms BSF.The electrode of positive and negative all is silk screen printing.The denseer boron diffusion in this structure back side has guaranteed that back electrode and silicon substrate can form good Ohmic contact, but uses SiO
2Do the front passivation layer and be not suitable for, and as the passivation layer at the back side its neither be optimum, this makes its positive measuring current voltage also slightly reduce than conventional P type battery, therefore this structure is the optoelectronic transformation efficiency that obtains the back side with the cost (16%) that reduces positive conversion efficiency, and its power output is compared the too big advantage that there is no with traditional P type battery.
Summary of the invention
The present invention is on the basis of the two-sided battery structure of Hitachi, upper and lower surface to two-sided battery is that phosphorus expands face and boron expands face, the effective more passivating structure of research replaces the two-sided oxide passivation layer structure of Hitachi respectively, makes the conversion efficiency of battery be significantly improved.Result of study shows, with the passivation layer of SiNx film as battery front side, SiO
2(or Al
2O
3) and the SiNx duplicature as the passivation layer of cell backside, can make phosphorus expand face and boron and expand face and obtain best passivation effect respectively that simultaneously can obtain very good anti-reflection effect, conversion efficiency significantly promotes.Experiment shows, no matter is P type or N type silicon chip substrate, and this structure all is fit to.For this structure battery of P-type material, the test front and back has reached 18% and 15% conversion efficiency respectively under the AM1.5 simulated light, has then reached 18.5% and 15.5% for n type material.
The present invention proposes a kind of method of the making high efficient two-sided P-shaped crystalline silicon solar cell based on silk-screen printing technique, for general conventional P type silicon solar cell production line at present, only needs to transform a little and just can upgrade to this high efficient two-sided production line for manufacturing battery.The technology that this method is used comprises making herbs into wool, diffusion, etching, plated film, silk screen printing, sintering etc.
Method based on the making high efficient two-sided P-shaped crystalline silicon solar cell of silk-screen printing technique, its processing step is: in the positive phosphorous diffusion of P type silicon chip, growth of passivation layer and anti-reflection layer, make front electrode, in silicon chip back boron diffusion of P type or local boron diffusion, growth of passivation layer and anti-reflection layer are made backplate.
Two surfaces of battery can be the planes, also can be suede structures.
Advantage of the present invention is that its two surfaces can both be converted into electric energy with luminous energy, can make the whole power output of solar cell array improve 10 ~ 30%.So compare with the solar cell of single face generating, two-sided crystal-silicon solar cell has higher area specific power, gravimetric specific power, this is even more important to reducing cost of electricity-generating.And it can vertically place, and need not place towards south, so can be positioned over various occasions, for example makes fence, the soundproof wall of highway, and solar energy curtain walls etc. are used more extensive.The inventive method, manufacture craft is simple, and is with low cost, most technology is made and can both be carried out on common P type conventional batteries production line, equipment investment is low, and the production efficiency height is to finish by process optimization, technological innovation under the condition that does not increase equipment basically.
Description of drawings
Fig. 1 is the two-sided battery structure schematic diagram of Sunpower back of the body contact, and wherein 11 is n region electrodes.The 12nd, p region electrode, the 13rd, SiO
2Perforate.
Fig. 2 is the HIT battery structure schematic diagram of SANYO.Wherein 14 is electrodes, the 15th, and nesa coating.
Fig. 3 is the two-sided battery of P type of Hitachi.
Fig. 4 is the two-sided crystal silicon cell structural representation of P type (battery front side described in this patent all refers to the N profile, and cell backside all refers to the P profile) of the inventive method preparation.Wherein: the 1st, positive silver electrode; The 2nd, front passivated reflection reducing layer (75nmSiNx); The 3rd, phosphorous diffusion zone (n
+The district); The 4th, basis material (P type silicon); The 5th, boron diffused region (p
+The district); The 6th, back side anti-reflection layer (50nmSiO
2(or Al
2O
3) and 40nmSiNx); The 7th, the back silver electrode.Specify: among Fig. 4 (A) 3,5,3 can be the emitter of even diffusion concentration among Fig. 4 (B), also can be selective emitter (referring to patent CN 101101936A).
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further details.
For the two-sided battery structure shown in the accompanying drawing 4, key is the diffusion region that how to form two face different shaped layers.
For the two-sided crystal silicon cell structure of the P type shown in Fig. 4 (A), several different embodiments are arranged:
Embodiment 1:
1) remove the silicon chip affected layer, making herbs into wool,
2) front and edge diffused layer of boron are removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 2:
1) remove the silicon chip affected layer, making herbs into wool, growth front diffusion impervious layer,
2) barrier layer is removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 3:
1) remove the silicon chip affected layer, making herbs into wool,
2) back side and edge phosphorus-diffused layer are removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 4:
1) remove the silicon chip affected layer, making herbs into wool, growth back side diffusion barrier layer,
2) barrier layer is removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
For the two-sided crystal silicon cell structure of the P type shown in Fig. 4 (B), several different embodiments are arranged:
Embodiment 5:
1) remove the silicon chip affected layer, making herbs into wool,
2) front, the non-electrode window oral region in the back side and edge diffused layer of boron are removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 6:
1) remove the silicon chip affected layer, making herbs into wool, two-sided growth diffusion impervious layer are removed backplate window region diffusion impervious layer,
2) barrier layer is removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 7:
1) remove the silicon chip affected layer, making herbs into wool,
2) back side and edge phosphorus-diffused layer are removed in phosphorous diffusion, and two-sided growth diffusion impervious layer is removed backplate window region diffusion impervious layer,
3) back side and straight tackling layer are removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 8:
1) remove the silicon chip affected layer, making herbs into wool, growth back side diffusion barrier layer,
2) barrier layer is removed in phosphorous diffusion, and two-sided growth diffusion impervious layer is removed backplate window region diffusion impervious layer,
3) back side and straight tackling layer are removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Claims (1)
1. method based on the making high efficient two-sided P-shaped crystalline silicon solar cell of silk-screen printing technique, its preparation process is: in the positive phosphorous diffusion of P type silicon chip, growth of passivation layer and anti-reflection layer, make front electrode, in silicon chip back boron diffusion of P type or local boron diffusion, growth of passivation layer and anti-reflection layer are made backplate.
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101964373A (en) * | 2010-08-18 | 2011-02-02 | 中国科学院半导体研究所 | Double-junction solar cell of broad spectrum photovoltaic effect and preparation method thereof |
| CN102005508A (en) * | 2010-10-25 | 2011-04-06 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
| CN102136518A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Double-side passivated effective silicon solar cell and technical flows |
| CN102339902A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN103748693A (en) * | 2011-08-24 | 2014-04-23 | 应用材料公司 | High speed laser scanning system for silicon solar cell fabrication |
| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
| CN103996728A (en) * | 2013-02-20 | 2014-08-20 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN104051575A (en) * | 2014-06-20 | 2014-09-17 | 润峰电力有限公司 | Manufacturing technology of bionic solar cell with two sides receiving light |
| CN104505406A (en) * | 2014-12-29 | 2015-04-08 | 苏州强明光电有限公司 | GaAs double-faced thin-film solar cell |
| TWI492400B (en) * | 2013-02-21 | 2015-07-11 | 茂迪股份有限公司 | Solar cell, method for manufacturing the same and solar cell module |
| CN105185864A (en) * | 2015-07-18 | 2015-12-23 | 广东爱康太阳能科技有限公司 | Passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method |
| CN105590982A (en) * | 2016-02-19 | 2016-05-18 | 安徽旭能光伏电力有限公司 | High-efficiency solar cell piece and thermal treatment technology |
| CN106033786A (en) * | 2015-03-13 | 2016-10-19 | 聚日（苏州）科技有限公司 | Manufacturing method for solar cell |
| CN106298982A (en) * | 2016-09-09 | 2017-01-04 | 浙江晶科能源有限公司 | A kind of manufacture method of N-type double-side cell |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
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2009
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Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101964373B (en) * | 2010-08-18 | 2012-11-14 | 中国科学院半导体研究所 | Double-junction solar cell of broad spectrum photovoltaic effect and preparation method thereof |
| CN101964373A (en) * | 2010-08-18 | 2011-02-02 | 中国科学院半导体研究所 | Double-junction solar cell of broad spectrum photovoltaic effect and preparation method thereof |
| CN102005508A (en) * | 2010-10-25 | 2011-04-06 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
| CN102005508B (en) * | 2010-10-25 | 2012-02-08 | 湖南大学 | Method for continuously preparing crystalline silicon solar cell PN (Positive-Negative) junction and antireflection film |
| CN102136518A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Double-side passivated effective silicon solar cell and technical flows |
| CN102364692A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof |
| CN102339902A (en) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery |
| CN103748693A (en) * | 2011-08-24 | 2014-04-23 | 应用材料公司 | High speed laser scanning system for silicon solar cell fabrication |
| CN102386249B (en) * | 2011-10-31 | 2013-08-14 | 北京吉阳技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN103996728A (en) * | 2013-02-20 | 2014-08-20 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN103996728B (en) * | 2013-02-20 | 2017-03-22 | 茂迪股份有限公司 | Solar cell and module thereof |
| TWI483411B (en) * | 2013-02-20 | 2015-05-01 | Motech Ind Inc | Solar cell and module comprising the same |
| TWI492400B (en) * | 2013-02-21 | 2015-07-11 | 茂迪股份有限公司 | Solar cell, method for manufacturing the same and solar cell module |
| CN103887347A (en) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | Double-face P-type crystalline silicon battery structure and manufacturing method thereof |
| CN104051575A (en) * | 2014-06-20 | 2014-09-17 | 润峰电力有限公司 | Manufacturing technology of bionic solar cell with two sides receiving light |
| CN104051575B (en) * | 2014-06-20 | 2016-08-17 | 润峰电力有限公司 | A kind of processing technology of bionical double-side photic solaode |
| CN104505406A (en) * | 2014-12-29 | 2015-04-08 | 苏州强明光电有限公司 | GaAs double-faced thin-film solar cell |
| CN106033786A (en) * | 2015-03-13 | 2016-10-19 | 聚日（苏州）科技有限公司 | Manufacturing method for solar cell |
| CN106033786B (en) * | 2015-03-13 | 2018-07-06 | 聚日（苏州）科技有限公司 | The manufacturing method of solar cell |
| CN105185864A (en) * | 2015-07-18 | 2015-12-23 | 广东爱康太阳能科技有限公司 | Passivated emitter region back surface partial diffused crystalline silicon solar cell preparation method |
| CN105590982A (en) * | 2016-02-19 | 2016-05-18 | 安徽旭能光伏电力有限公司 | High-efficiency solar cell piece and thermal treatment technology |
| CN106298982A (en) * | 2016-09-09 | 2017-01-04 | 浙江晶科能源有限公司 | A kind of manufacture method of N-type double-side cell |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
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