CN214193447U - Bidirectional air intake passivation deposition device for photovoltaic cell - Google Patents
Bidirectional air intake passivation deposition device for photovoltaic cell Download PDFInfo
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- CN214193447U CN214193447U CN202120191283.8U CN202120191283U CN214193447U CN 214193447 U CN214193447 U CN 214193447U CN 202120191283 U CN202120191283 U CN 202120191283U CN 214193447 U CN214193447 U CN 214193447U
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Abstract
The utility model discloses a two-way passivation deposition apparatus that admits air of photovoltaic cell has a host computer room, has a process chamber at least in the host computer room, and process chamber's one end is the fire door end, and the other end is confined stove tail end, is equipped with first air inlet on process chamber is close to the position of fire door end, is equipped with first gas outlet on process chamber is close to the position of fire door end, is equipped with the second air inlet on process chamber is close to the position of stove tail end, is equipped with the second gas outlet on process chamber is close to the position of stove tail end or the stove tail. The utility model discloses a two-way alternative air inlet mode growth alumina membrane can improve the homogeneity of alumina membrane by a wide margin, and the homogeneity of alumina membrane equally can be controlled within 3% under the pyramid matte structure, can come out the stronger field passivation effect performance of alumina membrane, reduces auger complex, SRH complex and surface recombination, has improved passivation effect greatly.
Description
Technical Field
The utility model belongs to the technical field of the photovoltaic solar cell technique and specifically relates to an use passivation deposition device that admits air in photovoltaic cell is two-way in photovoltaic solar cell surface deposition.
Background
Photovoltaic solar cells are semiconductor materials that convert solar light energy directly into electrical energy. Currently, silicon photovoltaic cells using silicon as a substrate are commonly used, and include single crystal silicon, polycrystalline silicon, amorphous silicon, stacked photovoltaic cells of crystalline silicon and compound, and the like. PERT batteries (Passivated Emitter and reactor Rear-diffused batteries) and PERC batteries (Passivated Emitter and reactor Rear batteries) are novel photovoltaic battery technologies, and the PERT and PERC batteries are the biggest difference from conventional batteries in passivation of dielectric films on the front surface and the back surface, and can effectively reduce the electron recombination speed of the back surface. On the basis of the PERT battery, TOPCon (Tunnel Oxide Passivated Contact) has become a research hotspot as a novel passivation technology, and the technology is to generate an ultrathin tunnelable Oxide layer and a highly doped polysilicon layer on the surface of the battery. In addition, there are heterojunction (e.g., HJT) cell structures.
The current mature passivation methods include: the device comprises a tubular ALD atomic layer deposition passivation device, a flat-plate ALD atomic layer deposition passivation device, a tubular PECVD two-in-one passivation device, a flat-plate PECVD passivation device and the like, wherein the tubular ALD atomic layer deposition passivation device is taken as a leading part, and particularly, the requirements on the uniformity and passivation quality of the surface passivation of a silicon wafer are extremely strict under the promotion of the current photovoltaic cell on the large-size silicon wafer with the sizes of 182&210 and the like and a new technical route. The front side of the conventional PERT battery and the back side of the PERC battery are both provided with pyramid textured structures, and the pyramid textured structures are used for improving the conversion efficiency of the battery. When the ALD atomic layer deposition is carried out on the surface of the battery, the existing gas inlet and outlet mode is generally one-way gas inlet and outlet, the requirement that the uniformity of aluminum oxide is within 5% in a chip can be met, and the unevenness of the pyramid textured structure can reach more than 10% by using a one-way gas inlet and outlet mode (see figures 1 and 2), so that the energy efficiency advantage of the high-efficiency battery efficiency is greatly influenced.
SUMMERY OF THE UTILITY MODEL
The applicant provides a bidirectional air inlet passivation deposition device for a photovoltaic cell, aiming at the defects of poor uniformity of an aluminum oxide film on a pyramid suede structure and the like of the existing ALD passivation equipment, and the device improves the uniformity of an aluminum oxide film layer through a bidirectional alternative air inlet mode, solves the problems of air holes, field-free passivation, high energy consumption, EL black spots and the like caused by nonuniform aluminum oxide film, and can be used for double-sided passivation of silicon wafers.
The utility model discloses the technical scheme who adopts as follows:
the utility model provides a two-way passivation deposition apparatus that admits air of photovoltaic cell, has a host computer room, has a technology cavity at least in the host computer room, and the one end of technology cavity is the fire door end, and the other end is confined stove tail end, is equipped with first air inlet on the position that technology cavity is close to the fire door end, is equipped with first gas outlet on the position that technology cavity is close to the fire door end, is equipped with the second air inlet on the position that technology cavity is close to the stove tail end, is equipped with the second gas outlet on the position that technology cavity is close to the stove tail end or the stove tail.
As a further improvement of the above technical solution:
the side wall of the process chamber close to the furnace mouth end is provided with a first air inlet, the bottom of the process chamber close to the furnace mouth end is provided with a first air outlet, and the side wall of the process chamber close to the furnace tail end is provided with a second air inlet.
The first air inlet corresponds to the second air outlet, the first air inlet is communicated with an external first air inlet pipeline, and the second air outlet is communicated with an external second air outlet pipeline.
The second air inlet corresponds to the first air outlet, the second air inlet is communicated with an external second air inlet pipeline, and the first air outlet is communicated with an external first air outlet pipeline.
The second gas outlet pipeline is divided into a first branch and a second branch, and the first gas outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device.
The vacuum valve is installed on the first air outlet pipeline, the vacuum gauge is installed on the second air outlet pipeline and then is divided into a first branch and a second branch, the vacuum valve is installed on the first branch, and the vacuum valve is installed on the second branch.
The three-way combination mode adopts two-way combination and then combined with the third way, or three ways are combined simultaneously.
The tail gas treatment device is a tail gas treatment tank.
The tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
The utility model has the advantages as follows:
in order to solve the above-mentioned current problem of better, the utility model discloses a two-way alternative mode of admitting air growth aluminium oxide membrane can improve the homogeneity of aluminium oxide membrane by a wide margin, and the homogeneity of aluminium oxide membrane equally can be controlled within 3% under pyramid matte structure, can come out the stronger field passivation effect performance of aluminium oxide membrane, reduces auger complex, SRH complex (Shockley-Read-Hall), and unbalanced carrier is compound) and surface recombination, has improved the passivation effect greatly.
The utility model discloses adopt two-way alternating business turn over gas mode when the deposit alumina film, improve the homogeneity of aluminium oxide membrane, the maximize ground plays the unsaturated bond that hangs on aluminium oxide passivation silicon chip surface, has good field passivation and chemical passivation effect, solves the inhomogeneous gas pocket problem that brings of aluminium oxide membrane, no field passivation problem, high power consumption scheduling problem, is superior to the passivation effect of aluminium oxide membrane under the one-way business turn over air current mode only, solves the inhomogeneous passivation defect of its existence. The effect of chemical passivation, field passivation can further be strengthened to the alumina membrane of high homogeneity, the utility model has the advantages of economic nature is good, the feature of environmental protection is good, large-scale batch production feasibility is high, but wide application in battery structures such as PERT, PERC, TOPCon, heterojunction.
Drawings
Fig. 1 is a schematic view of a conventional gas inlet and outlet method.
Fig. 2 is a microscopic view of the prior art.
Fig. 3 is a simplified structure diagram of the present invention.
Fig. 4 is a structure diagram of the apparatus of the present invention.
Fig. 5 is a schematic view of the air inlet and outlet method of the present invention.
Fig. 6 is a microscopic view of the process of the present invention.
Wherein, 1, a process chamber; 2. a furnace mouth end; 3. the furnace tail end; 4. a first air inlet; 5. a first air outlet; 6. a second air inlet; 7. a second air outlet; firstly, the direction is one; ② the second direction.
Detailed Description
Referring to fig. 3 and 4, the bidirectional air intake passivation deposition apparatus for photovoltaic cells of the present invention has a main machine chamber, at least one process chamber 1 is provided in the main machine chamber, and the process chamber 1 is preferably a box body. One end of the process chamber 1 is a furnace mouth end 2 for installing a furnace cover structure, and the other end is a closed furnace tail end 3. The side wall of the process chamber 1 close to the furnace mouth end 2 is provided with a first air inlet 4, the first air inlet 4 is communicated with an external first air inlet pipeline, the bottom of the process chamber 1 close to the furnace mouth end 2 is provided with a first air outlet 5, and the first air outlet 5 is communicated with an external first air outlet pipeline. And a second air inlet 6 is arranged on the side wall of the process chamber 1 close to the furnace tail end 3, the second air inlet 6 is communicated with an external second air inlet pipeline, a second air outlet 7 is arranged on the furnace tail of the process chamber 1, and the second air outlet 7 is communicated with an external second air outlet pipeline.
The first air outlet pipeline is provided with a vacuum valve, the second air outlet pipeline is provided with a vacuum gauge and then is divided into a first branch and a second branch, the first branch is provided with the vacuum valve, the second branch is provided with the vacuum valve, the first air outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device, the three-way combination mode can be that two ways are combined firstly and then combined with the third way, or three ways are combined simultaneously, and the tail gas treatment device is preferably a tail gas treatment tank. The tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
The utility model discloses when implementing, adopt two-way alternative air current mode deposit alumina membrane to the silicon chip surface, first air inlet 4 forms the air current with second gas outlet 7 is corresponding, and second air inlet 6 forms the air current with first gas outlet 5 is corresponding. Firstly, process gas enters a process chamber 1 through a first gas inlet pipeline and a first gas inlet 4, is discharged through an external second gas outlet pipeline through a second gas outlet 7 after a deposition reaction occurs, and is transmitted in a tail gas treatment device through a pipeline to treat tail gas, and at the moment, the gas is discharged from the process chamber 1, so that furnace mouth gas inlet and furnace tail gas outlet are realized. Then, the process gas enters the process chamber 1 through the second gas inlet 6 from the second gas inlet pipeline, is discharged through the external first gas outlet pipeline from the first gas outlet 5 after a deposition reaction occurs, and is transmitted in the tail gas treatment device through the pipeline to treat the tail gas, and at the moment, the gas is discharged from the process chamber 1, so that the gas inlet at the furnace tail and the gas outlet at the furnace mouth are realized.
Specifically, depositing an alumina film in a furnace chamber by using a bidirectional alternating gas inlet and outlet mode, firstly introducing TMA gas for 2-10 seconds, purging with nitrogen for 5-20 seconds, introducing ozone or gaseous water for 2-10 seconds, and purging with nitrogen for 2-10 seconds, wherein the cycle is one cycle; changing the mode of furnace tail gas inlet and furnace mouth gas outlet, introducing TMA gas for 2-10 seconds, nitrogen purging for 5-20 seconds, and introducing ozone or gas2-10 seconds of water and 2-10 seconds of nitrogen purging, which is the second cycle. The two air inlet and outlet modes are alternately carried out at equal intervals. The thickness of the aluminum oxide is controlled within the range of 5 +/-3 nm, and the refractive index is controlled within the range of 1.5-1.7; under various surface microstructures, the uniformity of the aluminum oxide can be controlled within 3 percent. Participating in TMA (Al (CH)3)3) Preparation of alumina to Al together2O3The reactant of the membrane can optionally comprise water and O2、O3Any one or more thereof.
By way of example, in this embodiment, the backside of the silicon wafer is plated with an aluminum oxide film by ALD or PEALD, and the reaction gas participating in the plating of the aluminum oxide film includes TMA and ozone (O)3) And an assist gas. By adjusting TMA and ozone (O)3) Proportional reaction for preparing Al2O3The plating rate is controlled to be 1.7A/cycle, and the chemical reaction formula is [ Al (CH)3)3+O3→Al2O3+CO2↑+H2O↑]. The film thickness is controlled within 5 +/-2 nm, and the refractive index is 1.5-1.7. The ratio of argon to TMA in the auxiliary gas is 2: 1-10: 1. The assist gas may also be nitrogen.
Refer to fig. 5 and fig. 6, the utility model discloses a two-way alternative mode of admitting air growth alumina membrane, different according to the technology, alternate cycle sets for once, twice or many times, can improve the homogeneity of alumina membrane by a wide margin, the homogeneity of alumina membrane can be controlled within 3% equally under pyramid matte structure, can come out the stronger field passivation effect performance of alumina membrane, the maximize ground plays the unsaturated bond that hangs on alumina passivation silicon chip surface, good field passivation and chemical passivation effect have, solve the inhomogeneous gas pocket problem of bringing of alumina membrane, no field passivation problem, high power consumption scheduling problem.
The above description is illustrative of the present invention and is not intended to limit the present invention, and the present invention may be modified in any manner without departing from the spirit of the present invention.
Claims (9)
1. The utility model provides a two-way passivation deposition apparatus that admits air of photovoltaic cell which characterized in that: have a host computer room, the indoor one process chamber (1) that has at least of host computer, the one end of process chamber (1) is furnace mouth end (2), the other end is confined furnace tail end (3), be equipped with first air inlet (4) on the position that process chamber (1) is close to furnace mouth end (2), be equipped with first gas outlet (5) on the position that process chamber (1) is close to furnace mouth end (2), be equipped with second air inlet (6) on the position that process chamber (1) is close to furnace tail end (3), be equipped with second gas outlet (7) on the position that process chamber (1) is close to furnace tail end (3) or the furnace tail.
2. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 1, characterized in that: the side wall of the process chamber (1) close to the furnace mouth end (2) is provided with a first air inlet (4), the bottom of the process chamber (1) close to the furnace mouth end (2) is provided with a first air outlet (5), and the side wall of the process chamber (1) close to the furnace tail end (3) is provided with a second air inlet (6).
3. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 1, characterized in that: the first air inlet (4) corresponds to the second air outlet (7), the first air inlet (4) is communicated with an external first air inlet pipeline, and the second air outlet (7) is communicated with an external second air outlet pipeline.
4. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 3, characterized in that: the second air inlet (6) corresponds to the first air outlet (5), the second air inlet (6) is communicated with an external second air inlet pipeline, and the first air outlet (5) is communicated with an external first air outlet pipeline.
5. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 4, characterized in that: the second gas outlet pipeline is divided into a first branch and a second branch, and the first gas outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device.
6. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the vacuum valve is installed on the first air outlet pipeline, the vacuum gauge is installed on the second air outlet pipeline and then is divided into a first branch and a second branch, the vacuum valve is installed on the first branch, and the vacuum valve is installed on the second branch.
7. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the three-way combination mode adopts two-way combination and then combined with the third way, or three ways are combined simultaneously.
8. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the tail gas treatment device is a tail gas treatment tank.
9. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
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| CN202120191283.8U CN214193447U (en) | 2021-01-22 | 2021-01-22 | Bidirectional air intake passivation deposition device for photovoltaic cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112921302A (en) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | Bidirectional air intake passivation deposition device for photovoltaic cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112921302A (en) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | Bidirectional air intake passivation deposition device for photovoltaic cell |
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