CN105655449A - Preparation method of difunctional composite structure microcrystalline silicon oxygen interlayer for a-Si/nc-Si laminated solar cell - Google Patents
Preparation method of difunctional composite structure microcrystalline silicon oxygen interlayer for a-Si/nc-Si laminated solar cell Download PDFInfo
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- CN105655449A CN105655449A CN201610021195.7A CN201610021195A CN105655449A CN 105655449 A CN105655449 A CN 105655449A CN 201610021195 A CN201610021195 A CN 201610021195A CN 105655449 A CN105655449 A CN 105655449A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 17
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 239000002131 composite material Substances 0.000 title claims abstract description 9
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 title abstract description 7
- 239000011229 interlayer Substances 0.000 title abstract description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 title abstract 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 66
- 239000000377 silicon dioxide Substances 0.000 claims description 31
- 239000013081 microcrystal Substances 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 150000001875 compounds Chemical group 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 69
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract 3
- 238000010790 dilution Methods 0.000 abstract 2
- 239000012895 dilution Substances 0.000 abstract 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a difunctional composite structure microcrystalline silicon oxygen interlayer for a a-Si/nc-Si laminated solar cell and belongs to the technical field of solar cells. An n-type microcrystalline silicon thin layer is grown under a high hydrogen dilution ratio with SiH4, H2 and Ph3 serving as reaction gas; a microcrystalline silicon oxygen interlayer is grown on the n-type microcrystalline silicon layer with SiH4, H2, Ph3 and CO2 serving as the reaction gas; and an n-type microcrystalline silicon thin layer is grown under a high hydrogen dilution ratio with SiH4, H2 and Ph3 serving as the reaction gas; and forming a three-layer composite structure. According to the invention, the microcrystalline silicon oxygen interlayer thin layer prepared by the method improves short circuit current matching of the a-Si/nc-Si laminated solar cell, and the microcrystalline silicon oxygen interlayer thin layer serving as an interlayer of a laminated cell and an n layer of a noncrystalline silicon top cell simultaneously realizes a difunctional effect. The production process is simplified, the production time is reduced, and the production cost of the laminated cell is reduced to a certain extent.
Description
Technical field
The invention belongs to solar cell field, be a kind of preparation method for the difunctional composite construction intermediate layer of a-Si/nc-Si lamination solar cell.
Background technology
Solar cell is a kind of reproducible clean energy resource, has important strategic importance for solving energy crisis and environmental pollution. In recent years, silicon-base thin-film battery, as second filial generation solar cell, obtains significant progress with the advantage of its low cost.
Low and non-crystalline silicon the Staebler-Wronski effect of conversion efficiency is two big key factors of restriction silicon thin-film battery development. A-Si/nc-Si laminated cell, relative to unijunction silion cell, not only increases the utilization rate to sunlight and also reduces the declining action that non-crystalline silicon causes. But owing to the big-difference of crossing of top end battery obsorbing layer thickness makes the short-circuit current density pushing up battery less, therefore, solving battery short circuit currents match becomes research emphasis. Laminated cell introduces interlayer structure, it is possible to be effectively improved battery and to the selective reflecting of sunlight and pass through, improve the short-circuit current density of top battery. And current most of structure is amorphous n layer and intermediate layer, this is not enough to the optimization of the regulation and control of the reflectance of light and electric property, and n layer and intermediate layer Presence of an interface coupling good not, cause that battery performance reduces. Therefore, we devise novel composite construction and carry out remedy such and insufficient.
The present invention utilizes plasma enhanced chemical vapor deposition (PECVD) method, adopt the crystallite silicon oxide thin film of composite construction as laminated cell intermediate layer by technological innovation, improve the reflection of short-wave band light and then improve the short-circuit current density of top battery, substantially increasing the short circuit current coupling of a-Si/nc-Si laminated cell. And using the intermediate layer of this composite construction as the n layer of top battery, it is achieved the difunctional effect in silica intermediate layer. Optimize the structure of battery, reduce the production cost of battery to a certain extent.
Summary of the invention
Present invention seek to address that a-Si/nc-Si stacked solar cell, cascade solar cell short circuit currents matching problem.The preparation method that the purpose of the present invention is to propose to a kind of difunctional crystallite silicon oxide thin film for a-Si/nc-Si stacked solar cell, cascade solar cell.
Described difunctional compound structure crystallite silica intermediate layer is three-decker, concrete preparation method, it is characterised in that utilizes plasma enhanced chemical vapor deposition (PECVD) method to prepare, specifically includes following steps:
A) with SiH4��H2And PH3Reacting gas, under high diluted in hydrogen is than state on a-Si surface growing n-type microcrystal silicon thin layer;
B) with SiH4��H2��PH3And CO2For reacting gas, growth crystallite silica intermediate layer film on step a) the n-type microcrystal silicon layer prepared;
C) with SiH4��H2And PH3For reacting gas, high diluted in hydrogen than under state on step b) crystallite silica intermediate layer film growth and a) identical n-type microcrystal silicon thin layer; Thus formation three-layer composite structure.
Further according to the present invention:
Preferably, the preparation of n-type microcrystal silicon thin layer is growth under high diluted in hydrogen ratio, and radio frequency or very high frequency(VHF) power density are preferably in 250mW/cm2-450mW/cm2, it is preferred that 250mW/cm2-380mW/cm2; H during growing n-type microcrystal silicon thin layer2With SiH4Volume flow ratio be 130:1-150:1, PH3It is with H2For carrier gas, PH3With SiH4Volume flow percentage ratio is between 2%��3%.
Preferred: H during growth crystallite silica intermediate layer2With SiH4Volume flow ratio be 200:1-250:1. Radio frequency or the very high frequency(VHF) power density in growth crystallite silica intermediate layer are 450-500mW/cm2. The CO in growth crystallite silica intermediate layer2With SiH4Volume flow ratio be (1.60-2.5): 1. PH3With SiH4Volume flow percentage ratio between 3%��5%, PH3It is with H2For carrier gas.
During growth crystallite silica intermediate layer, chamber pressure is 3mbar.
In above-mentioned preparation process, back end vacuum is higher than 10-3Pa, underlayer temperature is 200 DEG C.
Step a) is than under state in high diluted in hydrogen at a-Si superficial growth n-type microcrystal silicon thin layer, after having grown n-type microcrystal silicon thin layer, before growth crystallite silica intermediate layer, the broken sky of PECVD chamber.
The thickness of n-type microcrystal silicon thin layer is 5-10nm; The thickness in the crystallite silica intermediate layer of growth is 60nm.
The preparation method of a kind of difunctional compound structure crystallite silica intermediate layer film for a-Si/nc-Si stacked solar cell, cascade solar cell of the present invention, it is possible to significantly improving the short-circuit current density of top battery, currents match and battery efficiency obtain bigger raising, see table 1 below; The technique that additionally present invention proposes is completely compatible with the preparation technology of existing a-Si/nc-Si stacked solar cell, cascade solar cell, is beneficial to industrialized development.
Aspect and advantage that the present invention adds will part provide in the following description, and part will become apparent from the description below, or is recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage will be apparent from easy to understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the flow chart preparing difunctional compound structure crystallite silica intermediate layer;
Fig. 2 is the structure chart in difunctional compound structure crystallite silica intermediate layer;
Wherein 201 is n-type crystallite thin layer, 202 crystallite silica intermediate layer films.
Detailed description of the invention
The preparation method that the present invention relates generally to a kind of difunctional compound structure crystallite silica intermediate layer for a-Si/nc-Si stacked solar cell, cascade solar cell. Following disclosure provides many different embodiments or example for realizing the different structure of the present invention. In order to simplify disclosure of the invention, hereinafter parts and setting to specific examples are described. Certainly, they are only merely illustrative, are not intended that limitation of the present invention. Additionally, the present invention can in different examples repeat reference numerals and/or letter.This repetition is for purposes of simplicity and clarity, the relation between itself not indicating discussed various embodiment and/or arranging. Additionally, the example of the various specific technique that the invention provides and material, but those of ordinary skill in the art are it can be appreciated that the use of the property of can be applicable to of other techniques and/or other materials.
Embodiment 1
Preparation flow figure with reference to the difunctional compound structure crystallite silica intermediate layer that Fig. 1, Fig. 1 are the embodiment of the present invention.
(1) in a step 101, with SiH4��H2��PH3For reacting gas, depositing n-type microcrystal silicon thin layer 201 on the amorphous i layer completed. Condition prepared by very high frequency PECVD (VHF-PECVD) is: back end vacuum is higher than 10-3Pa, underlayer temperature 200 DEG C, gas SiH4Flow is 100sccm, H2Flow is 13700sccm, PH3Flow is that 11.2sccm (wherein comprises H2Carrier gas, PH3/H2It is 20%), pressure is 2.5mbar, deposition power 430mW/cm2, the thickness 6nm of the microcrystal silicon thin layer 201 of preparation.
(2) then in a step 102, with SiH4��H2��CO2��PH3For reacting gas, at microcrystal silicon thin layer 201 superficial growth crystallite silicon oxide thin film 202. Condition prepared by VHF-PECVD is: back end vacuum is higher than 10-3Pa, underlayer temperature 200 DEG C, gas SiH4Flow is 64sccm, gas H2Flow is 14700sccm, gas CO2Flow is 105sccm, PH3Flow is that 13sccm (wherein comprises H2Carrier gas, PH3/H2It is 20%), pressure is 3mbar, deposition power 500mW/cm2, the thickness 60nm of the amorphous silicon passivation layer 202 of preparation.
(3) then in step 103, at microcrystal silicon oxygen layer 202 superficial growth microcrystal silicon thin layer 201. Condition prepared by VHF-PECVD is identical with step 101.
On amorphous i layer, growing n-type microcrystal silicon thin layer is than under state in high diluted in hydrogen, after having grown n-type microcrystal silicon thin layer, before growth crystallite silica intermediate layer, and the not broken sky of PECVD chamber.
Embodiment 2
Preparation flow figure with reference to the difunctional compound structure crystallite silica intermediate layer that Fig. 1, Fig. 1 are the embodiment of the present invention.
(1) in a step 101, with SiH4��H2��PH3For reacting gas, depositing n-type microcrystal silicon thin layer 201 on the amorphous i layer that upper step operation completes. Condition prepared by very high frequency PECVD (VHF-PECVD) is: back end vacuum is higher than 10-3Pa, underlayer temperature 200 DEG C, gas SiH4Flow is 100sccm, gas H2Flow is 13700sccm, gas PH3Flow is that 11.2sccm (wherein comprises H2Carrier gas, PH3/H2It is 20%), pressure is 2.5mbar, deposition power 430mW/cm2, the thickness 6nm of the microcrystal silicon thin layer 201 of preparation.
(2) then in a step 102, with SiH4��H2��CO2��PH3For reacting gas, at microcrystal silicon thin layer 201 superficial growth crystallite silicon oxide thin film 202. Condition prepared by VHF-PECVD is: back end vacuum is higher than 10-3Pa, underlayer temperature 200 DEG C, gas SiH4Flow is 80sccm, gas H2Flow is 14700sccm, gas CO2Flow be 175sccm, gas PH3Flow is that 13sccm (wherein comprises H2Carrier gas, PH3/H2It is 20%), pressure is 3mbar, deposition power 490mW/cm2, the thickness 60nm of the crystallite silica intermediate layer layer 202 of preparation.
(3) then in step 103, at microcrystal silicon oxygen layer 202 superficial growth microcrystal silicon thin layer 201. Condition prepared by VHF-PECVD is identical with step 101.
On amorphous i layer, growing n-type microcrystal silicon thin layer is than under state in high diluted in hydrogen, after having grown n-type microcrystal silicon thin layer, before growth crystallite silica intermediate layer, and the not broken sky of PECVD chamber.
The effectiveness comparison of above-described embodiment 1 and traditional handicraft (amorphous n layer and intermediate layer) is basically identical with embodiment 1 in the effect of Table 1. embodiment 2.
Table 1
| Isc(A) | Voc(V) | FF | Eff (%) | |
| Traditional handicraft | 1.16 | 96.9 | 0.740 | 10.5 |
| The present invention | 1.39 | 98.4 | 0.727 | 12.6 |
It is pointed out that the above-mentioned specific embodiment mode about step 101 to step 103 is only the simple clear schematic example describing the principle of the invention, not the present invention is done any pro forma restriction, the step that more especially can be realized by existing technique.
Although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention. Those of ordinary skill in the art it will be apparent that, without departing within the scope of technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or is modified to the Equivalent embodiments of equivalent variations, in every case it is the content without departing from technical solution of the present invention, according to any simple modification, equivalent variations and modification that above example is made by the technical spirit of the present invention, all still fall within the scope of technical solution of the present invention.
Claims (8)
1. the preparation method for the difunctional compound structure crystallite silica intermediate layer of a-Si/nc-Si stacked solar cell, cascade solar cell, it is characterized in that, difunctional compound structure crystallite silica intermediate layer is three-decker, utilize plasma enhanced chemical vapor deposition (PECVD) method to prepare, specifically include following steps:
A) with SiH4��H2And PH3For reacting gas, under high diluted in hydrogen is than state on a-Si surface growing n-type microcrystal silicon thin layer;
B) with SiH4��H2��PH3And CO2For reacting gas, growth crystallite silica intermediate layer film on step a) the n-type microcrystal silicon layer prepared;
C) with SiH4��H2And PH3For reacting gas, high diluted in hydrogen than under state on step b) crystallite silica intermediate layer film growth and a) identical n-type microcrystal silicon thin layer; Thus formation three-layer composite structure.
2. in accordance with the method for claim 1, it is characterised in that the preparation of n-type microcrystal silicon thin layer is growth under high diluted in hydrogen ratio, and radio frequency or very high frequency(VHF) power density are 250mW/cm2-450mW/cm2, H during growing n-type microcrystal silicon thin layer2With SiH4Volume flow ratio be 130:1-150:1; PH3With SiH4Volume flow percentage ratio is between 2%��3%.
3. in accordance with the method for claim 2, it is characterised in that radio frequency or very high frequency(VHF) power density 250mW/cm2-380mW/cm2��
4. in accordance with the method for claim 1, it is characterised in that step b) grows H during crystallite silica intermediate layer2With SiH4Volume flow ratio be 200:1-250:1. Radio frequency or the very high frequency(VHF) power density in growth crystallite silica intermediate layer are 450-500mW/cm2; The CO in growth crystallite silica intermediate layer2With SiH4Volume flow ratio be (1.60-2.5): 1; PH3With SiH4Volume flow percentage ratio is between 3%��5%.
5. in accordance with the method for claim 1, it is characterised in that during growth crystallite silica intermediate layer, chamber pressure is 3mbar.
6. in accordance with the method for claim 1, it is characterised in that in preparation process, back end vacuum is higher than 10-3Pa, underlayer temperature is 200 DEG C.
7. in accordance with the method for claim 1, it is characterized in that, step a) is than under state in high diluted in hydrogen at a-Si superficial growth n-type microcrystal silicon thin layer, after having grown n-type microcrystal silicon thin layer, before growth crystallite silica intermediate layer, the not broken sky of PECVD chamber.
8. in accordance with the method for claim 1, it is characterised in that the thickness of n-type microcrystal silicon thin layer is 5-10nm; The thickness in the crystallite silica intermediate layer of growth is 60nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594372A (en) * | 2021-07-29 | 2021-11-02 | 通威太阳能（安徽）有限公司 | Silicon/perovskite laminated solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101777593A (en) * | 2010-01-20 | 2010-07-14 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
| US20110108094A1 (en) * | 2008-06-26 | 2011-05-12 | Du Pont-Mitsui Polychemicals Co., Ltd. | Laminated sheet for solar cell and solar cell module using the same |
| CN103066153A (en) * | 2012-12-28 | 2013-04-24 | 福建铂阳精工设备有限公司 | Silicon-based thin-film lamination solar cell and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110108094A1 (en) * | 2008-06-26 | 2011-05-12 | Du Pont-Mitsui Polychemicals Co., Ltd. | Laminated sheet for solar cell and solar cell module using the same |
| CN101777593A (en) * | 2010-01-20 | 2010-07-14 | 景德镇陶瓷学院 | Non-crystalline/micro-crystalline silicon laminated solar battery with middle layer doping structure and manufacture method thereof |
| CN103066153A (en) * | 2012-12-28 | 2013-04-24 | 福建铂阳精工设备有限公司 | Silicon-based thin-film lamination solar cell and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594372A (en) * | 2021-07-29 | 2021-11-02 | 通威太阳能（安徽）有限公司 | Silicon/perovskite laminated solar cell and preparation method thereof |
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