CN109545710A - A kind of film plating process reducing refractive index - Google Patents
A kind of film plating process reducing refractive index Download PDFInfo
- Publication number
- CN109545710A CN109545710A CN201811143856.9A CN201811143856A CN109545710A CN 109545710 A CN109545710 A CN 109545710A CN 201811143856 A CN201811143856 A CN 201811143856A CN 109545710 A CN109545710 A CN 109545710A
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- Prior art keywords
- refractive index
- silicon wafer
- plating process
- film plating
- sih4
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Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000008569 process Effects 0.000 title claims abstract description 31
- 238000007747 plating Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 230000008859 change Effects 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000012528 membrane Substances 0.000 claims abstract description 14
- 235000008216 herbs Nutrition 0.000 claims abstract description 13
- 210000002268 wool Anatomy 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000004575 stone Substances 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 208000020442 loss of weight Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of film plating process for reducing refractive index to carry out making herbs into wool after it is the following steps are included: choose the damaging layer on former silicon wafer removal surface；Put the silicon wafer after making herbs into wool into diffusion furnace tube progress P diffusion；Silicon wafer after diffusion is put into chain type board and carries out etching edge and removes phosphorosilicate glass；It chooses the etching spotless silicon wafer of rear surface and carries out gradual change membrane process in filming equipment to reduce refractive index；By ellipsometer, silicon wafer refractive index after testing plated film counts the detail of color difference piece；Silicon wafer is finally passed through into silk-screen printing, tests cell piece efficiency after cell piece is made, statistics electrical performance of cell obtains efficiency gain, and the present invention provides a kind of film plating process of reduction refractive index that color difference piece maintains an equal level with prior art.
Description
Technical field
The present invention relates to crystal silicon battery manufacture of solar cells technical field more particularly to a kind of plated films for reducing refractive index
Method.
Background technique
With the continuous development of photovoltaic industry, battery chip technology is also in constantly mature and development, and anti-PID technology is not yet
Disconnected progress, ozone technology after etching, PE laughing gas technology, EVA of anti-PID etc. can slow down PID effect.Therefore, it improves
The refractive index of PECVD antireflective film is not come to slow down PID effect be unique approach, and on this basis, we can pass through
The refractive index of antireflective film is reduced to promote the short circuit current of cell piece, to finally promote the transfer efficiency of cell piece.According to existing
Technology, on existing coating process, with the reduction of refractive index, color difference also occurs therewith and in rising trend, specific manifestation
Increase for the edge color difference that whitens, color difference piece can not maintain an equal level with prior art.
Summary of the invention
The technical problems to be solved by the present invention are: overcome the defect of the above prior art, a kind of color difference piece and existing is provided
The film plating process for the reduction refractive index for having technique fair.
The technical solution used in the present invention is: it is a kind of reduce refractive index film plating process, it the following steps are included:
A after the damaging layer for) choosing former silicon wafer removal surface, making herbs into wool is carried out；
B) silicon wafer after making herbs into wool is put into diffusion furnace tube progress P diffusion；
C) silicon wafer after diffusion is put into chain type board and carries out etching edge and removes phosphorosilicate glass；
D it) chooses the etching spotless silicon wafer of rear surface and carries out gradual change membrane process in filming equipment to reduce refractive index；
E) pass through ellipsometer, the silicon wafer refractive index after testing plated film counts the detail of color difference piece；
F silicon wafer finally) is passed through into silk-screen printing, cell piece efficiency is tested after cell piece is made, counts electrical performance of cell
Obtain efficiency gain.
After using the above structure, compared with the prior art, the present invention has the following advantages: SIH4 and NH3 within a certain period of time
Flow is reduced as the time rises, and after dropping to certain proportion, is continued plated film certain time, is finally reached the mesh for reducing folding rate
Mark, and color difference piece and prior art can be maintained to maintain an equal level, chain type board is the equipment of prompt good big wound, and device name is chain type wet process quarter
Equipment is lost, each groove body carries out polished backside to silicon wafer according to certain medical fluid ratio, and etching edge goes the functions such as phosphorosilicate glass,
Gradual change membrane process is constantly to be changed in coating process on centrotherm board by rewriting to process control procedure
Become special gas ratio to realize, and most of company all uses two membranes at present, trilamellar membrane or four tunics are not real meanings
On gradual change.
Preferably, the gradual change membrane process is realized in centrotherm filming equipment by computer-controlled program.
Preferably, the gradual change membrane process is realized in graphite boat, the quantity of graphite boat piece in the graphite boat
It is 230~290.
Preferably, the quantity of graphite boat piece is 240~280 in the graphite boat, preferably 253,264 or 275
Piece.
Preferably, furnace tube temperature is 460 DEG C~490 DEG C in the gradual change membrane process, tube pressure 1600mtorr
~1700mtorr, boiler tube power are 7000w~8000w, and furnace tube temperature is preferably 470,480 or 485 DEG C, and tube pressure is preferred
For 1630,1655 or 1684mtorr, boiler tube power is preferably 7300,7500 or 7800w.
Preferably, originating special throughput in the gradual change membrane process includes SIH4 and NH3, the SIH4 is
1000sccm, the NH3 are that the ratio of 2500~4500sccm, the SIH4 and NH3 are 1:3~4, special throughput with
The increase of time and convert, SIH4:NH3 ratio is gradually reduced, after plated film after a period of time, after special gas proportions constant, when
Constant 100~250s of plated film again when SIH4 is 550~700sccm and NH3 is 7500~8500sccm originates special throughput
NH3 is preferably 3000,3500 or 4000sccm, after special gas proportions constant, SIH4 be preferably 600,630 or 650sccm and
NH3 is preferably 8000,8100 or 8200sccm, then the time of constant plated film is preferably 150,180 or 200s.
Detailed description of the invention
Fig. 1 is special throughput trend in coating process in a kind of film plating process embodiment one for reducing refractive index of the present invention.
Fig. 2 is special throughput trend in coating process in a kind of film plating process embodiment two for reducing refractive index of the present invention.
Fig. 3 is special throughput trend in coating process in a kind of film plating process embodiment three for reducing refractive index of the present invention.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and specific embodiments.
It is specific implementation step of the invention below, technical scheme of the present invention will be further described, but the present invention
It is not limited to these examples.
Embodiment one
A kind of film plating process of reduction refractive index of the invention, it includes using P-type silicon, by making herbs into wool, is spread, etching
Afterwards, using centrotherm filming equipment, use power for 7000w~8000w, temperature is 460 DEG C~490 DEG C, and pressure is
1600mtorr~1700mtorr, starting flow-rate ratio SIH4:NH3 are 1:3, and starting flow SIH4 is 1000sccm, and NH3 is
3000sccm, in 500s, as the time increases, SIH4 flow is successively decreased final stable in 650sccm, NH3 with 0.7sccm/s
Flow is incremented by with 10sccm/s and is finally stablized in 8000sccm, and finally with SIH4 flow 650sccm, NH3 flow 8000sccm
Constant plated film 150s, ratio 1:12.3, during plated film, with the lengthening of plated film time, SIH4/NH3 ratio gradually subtracts
It is small, it is final to stablize 1:12.3 (special throughput trend is as shown in Figure 1 in coating process), electricity is finally tested after silk-screen printing
Pond piece efficiency.
In the embodiment one after making herbs into wool, Reducing thickness is 0.23~0.26g, and Reducing thickness is silicon wafer loss of weight amount during making herbs into wool
Characterization.
After spreading in the embodiment one, sheet resistance is 83ohm~93ohm.
After etching in the embodiment one, Reducing thickness is 0.13~0.18g.
Refractive index is 2.05~2.06 after silicon nitride film is made in this manner, due to the distinctive characteristic of graded films, to silicon
Piece has better passivation effect and lower refractive index, so as to improve cell piece transfer efficiency.
Embodiment two
A kind of film plating process of reduction refractive index of the invention, it includes using P-type silicon, by making herbs into wool, is spread, etching
Afterwards, using centrotherm filming equipment, use power for 7000w~8000w, temperature is 460 DEG C~490 DEG C, and pressure is
1600mtorr~1700mtorr, it is 1:4 that starting flow-rate ratio, which is SIH4:NH3, and starting flow SIH4 is 1000sccm, and NH3 is
4000sccm, in 500s, as the time increases, SIH4 flow is successively decreased final stable in 650sccm, NH3 with 0.7sccm/s
Flow is incremented by with 8sccm/s and is finally stablized in 8000sccm, and finally with SIH4 flow 650sccm, NH3 flow 8000sccm
Constant plated film 150s, ratio 1:12.3, during plated film, with the lengthening of plated film time, SIH4/NH3 ratio gradually subtracts
It is small, it is final to stablize 1:12.3 (special throughput trend is as shown in Figure 2 in coating process), electricity is finally tested after silk-screen printing
Pond piece efficiency.
In the embodiment two after making herbs into wool, Reducing thickness is 0.23~0.26g.
After spreading in the embodiment two, sheet resistance is 83ohm~93ohm.
After etching in the embodiment two, Reducing thickness is 0.13~0.18g.
Refractive index is 2.04~2.06 after silicon nitride film is made in this manner, due to the distinctive characteristic of graded films, to silicon
Piece has better passivation effect and lower refractive index, so as to improve cell piece transfer efficiency.
Embodiment three
A kind of film plating process of reduction refractive index of the invention, it includes using P-type silicon, by making herbs into wool, is spread, etching
Afterwards, using centrotherm filming equipment, use power for 7000w~8000w, temperature is 460 DEG C~490 DEG C, and pressure is
1600mtorr~1700mtorr, it is 1:4 that starting flow-rate ratio, which is SIH4:NH3, and starting flow SIH4 is 1000sccm, and NH3 is
4000sccm, in 500s, as the time increases, SIH4 flow is successively decreased final stable in 600sccm, NH3 with 0.8sccm/s
Flow is incremented by with 8.4sccm/s and is finally stablized in 8200sccm, and finally with SIH4 flow 600sccm, NH3 flow
8200sccm constant plated film 150s, ratio 1:13.2, during plated film, with the lengthening of plated film time, SIH4/NH3 ratio
Example is gradually reduced, final to stablize 1:13.2 (special throughput trend is as shown in Figure 3 in coating process), finally passes through silk-screen printing
Cell piece efficiency is tested afterwards.
In the embodiment three after making herbs into wool, Reducing thickness is 0.23~0.26g.
After spreading in the embodiment three, sheet resistance is 83ohm~93ohm.
After etching in the embodiment three, Reducing thickness is 0.13~0.18g.
Refractive index is 2.04~2.06 after silicon nitride film is made in this manner, due to the distinctive characteristic of graded films, to silicon
Piece has better passivation effect and lower refractive index, so as to improve cell piece transfer efficiency.
Refractive index of the present invention is as follows: with producing line comparison
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | |
| Experiment slice | 2.0504 | 2.0566 | 2.0532 | 2.0623 | 2.0533 | 2.0628 | 2.0606 | 2.0597 |
| Producing line | 2.0785 | 2.0813 | 2.0799 | 2.0833 | 2.0746 | 2.0768 | 2.0812 | 2.0746 |
As can be seen from the above table, refractive index of the refractive index of cell piece of the invention than the cell piece that existing producing line is worked it out
It is low, reduce the refractive index of cell piece.
Electrical property of the present invention is as follows: with the comparison of producing line electrical property
| Quantity | Uoc | Isc | Rs | Rsh | FF | NCell | Irev2 | |
| Experiment slice | 1543 | 0.6320 | 9.1194 | 0.0012 | 449 | 80.227 | 18.820% | 0.0484 |
| Producing line batch | 71460 | 0.6309 | 9.1174 | 0.0012 | 321 | 80.090 | 18.750% | 0.0693 |
As can be seen from the above table, the high conversion efficiency of cell piece of the invention.
Bad contrast table
As can be seen from the above table, the color difference piece of cell piece of the invention and prior art maintain an equal level.
Preferred embodiments of the present invention are described above, but are not to be construed as limiting the scope of the invention.This hair
Bright to be not only limited to above embodiments, specific structure is allowed to vary, all institutes in the protection scope of demand for independence of the present invention
The various change of work is within the scope of the invention.
Claims (6)
1. it is a kind of reduce refractive index film plating process, it is characterised in that: it the following steps are included:
A after the damaging layer for) choosing former silicon wafer removal surface, making herbs into wool is carried out；
B) silicon wafer after making herbs into wool is put into diffusion furnace tube progress P diffusion；
C) silicon wafer after diffusion is put into chain type board and carries out etching edge and removes phosphorosilicate glass；
D it) chooses the etching spotless silicon wafer of rear surface and carries out gradual change membrane process in filming equipment to reduce refractive index；
E) pass through ellipsometer, the silicon wafer refractive index after testing plated film counts the detail of color difference piece；
F silicon wafer finally) is passed through into silk-screen printing, tests cell piece efficiency after cell piece is made, statistics electrical performance of cell obtains
Efficiency gain.
2. a kind of film plating process for reducing refractive index according to claim 1, it is characterised in that: the gradual change membrane process
It is realized in centrotherm filming equipment by computer-controlled program.
3. a kind of film plating process for reducing refractive index according to claim 1, it is characterised in that: the gradual change membrane process
It is realized in graphite boat, the quantity of graphite boat piece is 230~290 in the graphite boat.
4. a kind of film plating process for reducing refractive index according to claim 3, it is characterised in that: stone in the graphite boat
The quantity of black boat piece is 240~280.
5. a kind of film plating process for reducing refractive index according to claim 1, it is characterised in that: the gradual change membrane process
Middle furnace tube temperature be 460 DEG C~490 DEG C, tube pressure be 1600mtorr~1700mtorr, boiler tube power be 7000w~
8000w。
6. a kind of film plating process for reducing refractive index according to claim 1, it is characterised in that: the gradual change membrane process
The special throughput of middle starting includes SIH4 and NH3, and the SIH4 is 1000sccm, and the NH3 is 2500~4500sccm, institute
The ratio of the SIH4 and NH3 that state are 1:3~4, and special throughput converts as time increases, and SIH4:NH3 ratio gradually subtracts
It is small, after plated film after a period of time, after special gas proportions constant, when SIH4 be 550~700sccm and NH3 be 7500~
Constant 100~250s of plated film again when 8500sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811143856.9A CN109545710A (en) | 2018-09-29 | 2018-09-29 | A kind of film plating process reducing refractive index |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811143856.9A CN109545710A (en) | 2018-09-29 | 2018-09-29 | A kind of film plating process reducing refractive index |
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| Publication Number | Publication Date |
|---|---|
| CN109545710A true CN109545710A (en) | 2019-03-29 |
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|---|---|---|---|
| CN201811143856.9A Pending CN109545710A (en) | 2018-09-29 | 2018-09-29 | A kind of film plating process reducing refractive index |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120064268A (en) * | 2010-12-09 | 2012-06-19 | 엘지전자 주식회사 | Thin film solar cell and manufacturing method thereof |
| CN103022254A (en) * | 2012-12-21 | 2013-04-03 | 浙江正泰太阳能科技有限公司 | Graduated-refractive-index antireflection-film solar cell and preparation method thereof |
| CN107154437A (en) * | 2017-06-30 | 2017-09-12 | 国家电投集团西安太阳能电力有限公司 | The preparation method of solar battery antireflective film |
| US9837260B2 (en) * | 2011-07-19 | 2017-12-05 | Tokyo Electron Limited | Cleaning method, processing apparatus, and storage medium |
-
2018
- 2018-09-29 CN CN201811143856.9A patent/CN109545710A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120064268A (en) * | 2010-12-09 | 2012-06-19 | 엘지전자 주식회사 | Thin film solar cell and manufacturing method thereof |
| US9837260B2 (en) * | 2011-07-19 | 2017-12-05 | Tokyo Electron Limited | Cleaning method, processing apparatus, and storage medium |
| CN103022254A (en) * | 2012-12-21 | 2013-04-03 | 浙江正泰太阳能科技有限公司 | Graduated-refractive-index antireflection-film solar cell and preparation method thereof |
| CN107154437A (en) * | 2017-06-30 | 2017-09-12 | 国家电投集团西安太阳能电力有限公司 | The preparation method of solar battery antireflective film |
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Application publication date: 20190329 |