CN105506583A - Three-layer membrane process of tube type PECVD - Google Patents
Three-layer membrane process of tube type PECVD Download PDFInfo
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- CN105506583A CN105506583A CN201610014170.4A CN201610014170A CN105506583A CN 105506583 A CN105506583 A CN 105506583A CN 201610014170 A CN201610014170 A CN 201610014170A CN 105506583 A CN105506583 A CN 105506583A
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 38
- 239000012528 membrane Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 58
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 27
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 30
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 21
- 235000008216 herbs Nutrition 0.000 claims description 15
- 210000002268 wool Anatomy 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 238000010792 warming Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 49
- 210000004027 cell Anatomy 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a three-layer membrane process of a tube type PECVD. Three layers of silicon nitride membranes are deposited on a silicon-based substrate through the tube pipe PECVD, according to the silicon nitride membranes, the thickness of the first layer is 10-20 nm, and the refractive index is 2.4-2.5; the thickness of the second layer is 20-30 nm, and the refractive index is 2.0-2.1; the thickness of the third layer is 30-50 nm, and the refractive index is 1.8-1.9. According to the three-layer membrane process, two layers of membranes are increased to three layers of membranes, technical parameters are optimized, no equipment is needed to be increased, the passivation effect of a silicon nitride membrane on a silicon wafer is effectively improved, the antireflection function is reinforced, and photoelectric conversion efficiency of solar cells is improved.
Description
Technical field
The present invention relates to the trilamellar membrane technique of a kind of tubular type PECVD, belong to field of photovoltaic technology.
Background technology
In recent years, the constantly progress of solar battery sheet production technology, production cost constantly reduces, and efficiency of conversion improves constantly, and makes the application of photovoltaic generation day by day universal and fast development, becomes the important sources of supply of electric power gradually.Solar battery sheet under irradiation by sunlight, can be electric energy transform light energy, realizes photovoltaic generation.
The production technique more complicated of solar battery sheet, in simple terms, the making processes of solar cell mainly comprises: making herbs into wool, diffusion, etching, plated film, printing and sintering etc.Wherein coated with antireflection membrane process is the antireflective coating plating one or more layers optical property coupling at battery surface, and the making of antireflective coating directly affects solar cell to incident light reflectance, plays very important effect to the raising of solar battery efficiency.Antireflective coating also needs certain passivation effect, contributes to the photoelectric transformation efficiency improving solar cell like this.
In current scale operation, crystal silicon cell surface adopts PECVD method to plate one deck or dual layer nitride silicon fiml, although can play passivation and anti-reflective effect, its reflectivity is still higher, and passivation effect does not reach best yet.
Summary of the invention
The object of this invention is to provide the trilamellar membrane technique of a kind of tubular type PECVD, by depositing trilamellar membrane in silicon-based substrate, optimizing the processing parameter of plated film, improve the passivation effect of plated film, improve the antireflective effect of antireflective coating, improve the photoelectric transformation efficiency of solar cell.
A trilamellar membrane technique of tubular type PECVD, silicon-based substrate comprises three layers of silicon nitride film.
A trilamellar membrane technique of tubular type PECVD, the first layer thickness of in silicon-based substrate three layers of described silicon nitride film is 10 ~ 20nm, and specific refractory power is 2.4 ~ 2.5; Second layer thickness is 20 ~ 30nm, and specific refractory power is 2.0 ~ 2.1; Third layer thickness is 30 ~ 50nm, and specific refractory power is 1.8 ~ 1.9.
A trilamellar membrane technique of tubular type PECVD, described silicon-based substrate is the one in monocrystalline substrate, multicrystalline silicon substrate.
A trilamellar membrane technique of tubular type PECVD, preparation method is following steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 300 ~ 500 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1300 ~ 2200mtor, in boiler tube, pass into gas flow is the ammonia of 3000 ~ 6000sccm, the silane of 1000 ~ 2000sccm, 100 ~ 200sec is ionized under the radio frequency power of 5000 ~ 7000W, it is 10 ~ 20nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.4 ~ 2.5;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, in boiler tube, pass into gas flow is the ammonia of 6500 ~ 8500sccm, the silane of 400 ~ 1000sccm, 200 ~ 300sec is ionized under the radio frequency power of 5000 ~ 7000W, on the first layer silicon nitride film, deposit thickness is 20 ~ 30nm, and specific refractory power is the second layer silicon nitride film of 2.0 ~ 2.1;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, in boiler tube, pass into gas flow is the ammonia of 7500 ~ 10000sccm, the silane of 300 ~ 700sccm, 300 ~ 500sec is ionized under the radio frequency power of 5000 ~ 7000W, on second layer silicon nitride film, deposit thickness is 30 ~ 50nm, and specific refractory power is the third layer silicon nitride film of 1.8 ~ 1.9.
Wherein the equipment of tubular type PECVD is Centrotherm.
The present invention, by depositing trilamellar membrane in silicon-based substrate, is optimized processing parameter, without the need to improving equipment, realize than being easier to, effectively improve the passivation effect of silicon nitride film to silicon chip, enhance antireflective effect, improve the photoelectric transformation efficiency of solar cell.
Embodiment
The following stated be only the preferred implementation that a kind of board-like PECVD disclosed in this invention prepares the method for silicon nitride anti-reflecting film; should be understood that; for the person of ordinary skill of the art; do not depart from the present invention create the prerequisite of design under; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Embodiment 1:
A trilamellar membrane technique of tubular type PECVD, preparation method is following steps:
1) get the P type polysilicon chip 500 that resistivity is 156mm × 156mm specification of 0.5 ~ 3 Ω cm, silicon chip is carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 400 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1700mtor, in boiler tube, pass into gas flow is the ammonia of 4000sccm, the silane of 1200sccm, under the radio frequency power of 6000W, ionize 150sec, it is 15nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.43;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 7500sccm, the silane of 700sccm, 25sec is ionized under the radio frequency power of 6500W, on the first layer silicon nitride film, deposit thickness is 25nm, and specific refractory power is the second layer silicon nitride film of 2.04;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 9000sccm, the silane of 600sccm, 400sec is ionized under the radio frequency power of 6500W, on second layer silicon nitride film, deposit thickness is 40nm, and specific refractory power is the third layer silicon nitride film of 1.86.
Embodiment 2:
A trilamellar membrane technique of tubular type PECVD, preparation method is following steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 450 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1800mtor, in boiler tube, pass into gas flow is the ammonia of 5000sccm, the silane of 1300sccm, under the radio frequency power of 7000W, ionize 200sec, it is 20nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.45;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 7000sccm, the silane of 800sccm, 220sec is ionized under the radio frequency power of 6500W, on the first layer silicon nitride film, deposit thickness is 22nm, and specific refractory power is the second layer silicon nitride film of 2.06;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 9500sccm, the silane of 650sccm, 420sec is ionized under the radio frequency power of 6500W, on second layer silicon nitride film, deposit thickness is 42nm, and specific refractory power is the third layer silicon nitride film of 1.87.
Embodiment 3:
A trilamellar membrane technique of tubular type PECVD, preparation method is following steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 380 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1500mtor, in boiler tube, pass into gas flow is the ammonia of 5500sccm, the silane of 1100sccm, under the radio frequency power of 7000W, ionize 130sec, it is 13nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.42;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 7500sccm, the silane of 900sccm, 240sec is ionized under the radio frequency power of 6500W, on the first layer silicon nitride film, deposit thickness is 24nm, and specific refractory power is the second layer silicon nitride film of 2.05;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 9000sccm, the silane of 550sccm, 460sec is ionized under the radio frequency power of 6500W, on second layer silicon nitride film, deposit thickness is 46nm, and specific refractory power is the third layer silicon nitride film of 1.82.
Comparative example 1:
A trilamellar membrane technique of tubular type PECVD, comprises the steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 470 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1800mtor, in boiler tube, pass into gas flow is the ammonia of 5000sccm, the silane of 1300sccm, under the radio frequency power of 7000W, ionize 200sec, it is 20nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.45;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 7000sccm, the silane of 800sccm, 220sec is ionized under the radio frequency power of 6500W, on the first layer silicon nitride film, deposit thickness is 22nm, and specific refractory power is the second layer silicon nitride film of 2.06;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 9500sccm, the silane of 650sccm, 420sec is ionized under the radio frequency power of 6500W, on second layer silicon nitride film, deposit thickness is 42nm, and specific refractory power is the third layer silicon nitride film of 1.87.
Comparative example 2:
A trilamellar membrane technique of tubular type PECVD, comprises the steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 380 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1500mtor, in boiler tube, pass into gas flow is the ammonia of 5500sccm, the silane of 1100sccm, under the radio frequency power of 7000W, ionize 130sec, it is 13nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.42;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 7500sccm, the silane of 900sccm, 240sec is ionized under the radio frequency power of 6500W, on the first layer silicon nitride film, deposit thickness is 24nm, and specific refractory power is the second layer silicon nitride film of 2.05;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 400 ~ 480 DEG C, in boiler tube, pass into gas flow is the ammonia of 9000sccm, the silane of 550sccm, 460sec is ionized under the radio frequency power of 6500W, on second layer silicon nitride film, deposit thickness is 46nm, and specific refractory power is the third layer silicon nitride film of 1.82.
Table 1: each embodiment and the contrast of comparative example unit for electrical property parameters:
Can find out from upper table result, the unit for electrical property parameters that the embodiment 1 ~ 3 within the scope of present invention process obtains obviously is better than comparative example 1 ~ 2.The specific technique of visible employing the present invention, specific refractory power and distinctive three layers of antireflective coating structure, obtained solar-electricity performance perameter is more excellent, improves the photoelectric transformation efficiency of solar cell.
Claims (5)
1. a trilamellar membrane technique of tubular type PECVD, is characterized in that: in silicon-based substrate, comprise three layers of silicon nitride film.
2. the trilamellar membrane technique of a kind of tubular type PECVD according to claim 1, is characterized in that: the first layer thickness of three layers of silicon nitride film that silicon-based substrate deposits is 10 ~ 20nm, and specific refractory power is 2.4 ~ 2.5; Second layer thickness is 20 ~ 30nm, and specific refractory power is 2.0 ~ 2.1; Third layer thickness is 30 ~ 50nm, and specific refractory power is 1.8 ~ 1.9.
3. the trilamellar membrane technique of a kind of tubular type PECVD according to claim 1, is characterized in that: described silicon-based substrate is the one in monocrystalline substrate, multicrystalline silicon substrate.
4. a trilamellar membrane technique of tubular type PECVD, is characterized in that, preparation method is following steps:
1) 156 × 156 silicon chips are carried out making herbs into wool;
2) silicon chip after making herbs into wool is carried out diffusion for PN junction, etching is removed phosphorosilicate glass and is carved limit;
3) silicon-based substrate after cleaning is inserted after graphite frame, vacuumize in the deposit cavity being placed in tubular type PECVD filming equipment, and be warming up to 300 ~ 500 DEG C;
4) when PECVD device vacuum chamber vacuum reaches 1300 ~ 2200mtor, in boiler tube, pass into gas flow is the ammonia of 3000 ~ 6000sccm, the silane of 1000 ~ 2000sccm, 100 ~ 200sec is ionized under the radio frequency power of 5000 ~ 7000W, it is 10 ~ 20nm that silicon-based substrate deposits the first layer thickness, and specific refractory power is the silicon nitride film of 2.4 ~ 2.5;
5) silicon chip being coated with the first layer silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, in boiler tube, pass into gas flow is the ammonia of 6500 ~ 8500sccm, the silane of 400 ~ 1000sccm, 200 ~ 300sec is ionized under the radio frequency power of 5000 ~ 7000W, on the first layer silicon nitride film, deposit thickness is 20 ~ 30nm, and specific refractory power is the second layer silicon nitride film of 2.0 ~ 2.1;
6) silicon chip being coated with second layer silicon nitride film is proceeded deposition, depositing temperature is 300 ~ 500 DEG C, in boiler tube, pass into gas flow is the ammonia of 7500 ~ 10000sccm, the silane of 300 ~ 700sccm, 300 ~ 500sec is ionized under the radio frequency power of 5000 ~ 7000W, on second layer silicon nitride film, deposit thickness is 30 ~ 50nm, and specific refractory power is the third layer silicon nitride film of 1.8 ~ 1.9.
5. the trilamellar membrane technique of a kind of tubular type PECVD as claimed in claim 4, is characterized in that, the equipment of tubular type PECVD is Centrotherm.
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| CN108630764A (en) * | 2018-06-22 | 2018-10-09 | 通威太阳能（安徽）有限公司 | A kind of back side film layer structure and preparation method promoting PERC cell backside transfer efficiencies |
| CN113675295A (en) * | 2021-07-12 | 2021-11-19 | 深圳市捷佳伟创新能源装备股份有限公司 | Method for preparing silicon wafer composite membrane by PECVD and preparation method of TOPCon battery |
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