CN207062372U - Automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system - Google Patents
Automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system Download PDFInfo
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- CN207062372U CN207062372U CN201720724767.8U CN201720724767U CN207062372U CN 207062372 U CN207062372 U CN 207062372U CN 201720724767 U CN201720724767 U CN 201720724767U CN 207062372 U CN207062372 U CN 207062372U
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Abstract
It the utility model is related to film preparation device, it is desirable to provide automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system.This kind of automatic flat-plate formula PECVD aluminum oxide includes preheating cavity, alumina technology chamber, cushion chamber, nitride process chamber, discharging chamber with silicon nitride stack film preparing system, for plating aluminum oxide and silicon nitride stack film to cell piece.The utility model can plate aluminum oxide and silicon nitride stack film on solar battery sheet surface, aluminum oxide film can play a part of passivation to cell piece, silicon nitride film can play a part of anti-reflection, production capacity can not only be greatly improved, and laminate film can improve the conversion efficiency of cell piece to a certain extent.
Description
Technical field
The utility model is on film preparation device field, more particularly to automatic flat-plate formula PECVD aluminum oxide and nitridation
Silicon laminate film preparation system.
Background technology
In recent years, in order to reduce the cost of solar cell, the thickness of silicon chip constantly reduces, but with silicon wafer thickness
It is thinned, the diffusion length of minority carrier may be close to or the thickness more than silicon chip, part minority carrier will be diffused into electricity
The pond back side and produce compound, this will produce material impact to battery efficiency.In addition, in order to improve the conversion efficiency of cell piece, need
Will be in cell piece surface coated with antireflection film, coated with antireflection film mainly uses PECVD methods at present, while PECVD methods can also rise
To the effect of passivation, cell piece back side recombination rate is reduced.
PECVD methods are to prepare in anti-reflection film method the most ripe, and operation is also relatively simple, can realize full-automatic metaplasia
Production, current PECVD device mainly have two kinds, and one kind is Tubular PECVD device, and the method for work that this equipment uses is in list
A series of continuous processes for realizing plating antireflective film, cause production capacity very low in one chamber；Another kind is board-like PECVD device, this
Kind equipment can realize continuous production, and production capacity is also very high, but technology is monopolized by foreign countries at present, and the Costco Wholesale of import is very high.
Utility model content
Main purpose of the present utility model is to overcome deficiency of the prior art, there is provided a kind of multi-chamber is in vacuum condition
The full-automatic panel PECVD aluminum oxide continuously to work down and silicon nitride stack film preparing system.In order to solve the above technical problems,
Solution of the present utility model is：
A kind of automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system are provided, for being plated to cell piece
Aluminum oxide and silicon nitride stack film, the automatic flat-plate formula PECVD aluminum oxide include with silicon nitride stack film preparing system
Preheating cavity, alumina technology chamber, cushion chamber, nitride process chamber, discharging chamber；
The preheating cavity uses aluminum cavity, and the inside of aluminum cavity is provided with (12) heating fluorescent tubes, for battery
Piece is tentatively heated；
The alumina technology chamber uses stainless steel cavity, and stainless steel inside cavity is provided with heating tube A, process gas spray
For fully being heated to cell piece, the process gas puff prot A is used for conduct by gas port A, microwave source A, the heating tube A
The puff prot of trimethyl aluminium, nitrous oxide, the microwave source A can be by exciting plasma anti-at low temperature for process gas
Aluminum oxide should be generated condition is provided；
The cushion chamber uses aluminum hollow cavity, is arranged between alumina technology chamber and nitride process chamber, is used for
Carry out transition；
The nitride process chamber uses stainless steel cavity, and stainless steel inside cavity is provided with heating tube B, process gas spray
Gas port B, microwave source B, the heating tube B are fully heated for cell piece, and the process gas puff prot B is used to be used as silicon
The puff prot of alkane, ammonia, the microwave source B can be by exciting plasma to react generation silicon nitride at low temperature for process gas
Offer condition；
The discharging chamber is aluminum hollow cavity, for being cooled down to cell piece：By being vacuumized to discharging chamber and together
When be passed through high pure nitrogen to realize；
Preheating cavity, alumina technology chamber, cushion chamber, nitride process chamber, discharging chamber are arranged on respective by bolt respectively
Frame on, and utilize the adjacent connection of bolt successively；The front end of preheating cavity is provided with flap valve, for block air and preheating cavity it
Between gas circulation；Flap valve is provided between preheating cavity and alumina technology chamber, for blocking preheating cavity and alumina technology chamber
Between gas circulation；The both ends of cushion chamber are fitted with flap valve, are respectively used to block cushion chamber and alumina technology chamber, nitrogen
Gas circulation between SiClx process cavity；Flap valve is provided between nitride process chamber and discharging chamber, for block discharging chamber with
Gas circulation between nitride process chamber；The rear end of discharging chamber is provided with flap valve, for blocking between discharging chamber and air
Gas circulates.
As a further improvement, perfect safety mutually-locking device and warning function are additionally provided with.
Compared with prior art, the beneficial effects of the utility model are：
The PECVD film preparations system that this multi-chamber combination that the utility model uses continuously works under vacuum
System, aluminum oxide and silicon nitride stack film can be plated on solar battery sheet surface；Aluminum oxide film can play to cell piece
The effect of passivation, silicon nitride film can play a part of anti-reflection, and production capacity, and laminate film energy can not only be greatly improved
Enough conversion efficiencies for improving cell piece to a certain extent.
Specific advantage of the present utility model is as follows：1) it can realize that full-automatic plating aluminum oxide and silicon nitride stack are thin to cell piece
Film, whole process are controlled using microcomputer；2) production capacity 60MW/ (3400 tablets h), production capacity increases substantially；3) uniformity of film piece
Interior≤± 3%, between piece≤± 4%, between batch≤3%；4) cell piece efficiency >=21.4%；5) ranges of indices of refraction：2.0~2.1 batches
Secondary uniformity：± 5%；6) there is perfect safety mutually-locking device and warning function；7) vacuum dry process；8) film-forming temperature
100 DEG C~400 DEG C continuously adjustabes；9) process gas flow can be realized separately adjustable.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Reference in figure is：1 flap valve；2 preheating cavities；3 alumina technology chambers；4 cushion chambers；5 nitride process chambers；
6 discharging chambers.
Embodiment
The utility model is described in further detail with embodiment below in conjunction with the accompanying drawings：
A kind of full-automatic panel PECVD aluminum oxide as shown in Figure 1 includes preheating with silicon nitride stack film preparing system
Chamber 2, alumina technology chamber 3, cushion chamber 4, nitride process chamber 5, discharging chamber 6, for plating aluminum oxide and silicon nitride to cell piece
Laminate film.
The preheating cavity 2 is a kind of aluminum cavity, and inside is provided with 12 heating fluorescent tubes, preliminary for being carried out to cell piece
Heating.
The alumina technology chamber 3 is a kind of stainless steel cavity, inside be provided with heating tube A, process gas puff prot A,
Microwave source A, the heating tube A are used for the abundant heating of cell piece, the process gas puff prot A be used to providing trimethyl aluminium,
Nitrous oxide, ammonia, the microwave source A can be by exciting plasma to react generation oxidation at low temperature for process gas
Aluminium provides condition.
The cushion chamber 4 is aluminum hollow cavity, between alumina technology chamber 3 and nitride process chamber 5, playing
The effect crossed.
The nitride process is a kind of stainless steel cavity, and inside is provided with heating tube B, process gas puff prot B, microwave
Source B, the heating tube B are used for the abundant heating of cell piece, and the process gas puff prot B is used to provide silane, ammonia, described
Microwave source B can provide condition by exciting plasma to react generation silicon nitride at low temperature for process gas.
The discharging chamber 6 is aluminum hollow cavity, and cavity wall is provided with high pure nitrogen air inlet, while cavity vacuumizes
High pure nitrogen is passed through tentatively to cool down cell piece.
Preheating cavity 2, alumina technology chamber 3, cushion chamber 4, nitride process chamber 5, discharging chamber 6 are arranged on by bolt respectively
In respective frame, and the adjacent connection of bolt is utilized successively.
During work：Photovoltaic crystal silicon piece passes through first enters inside preheating cavity 2 with the front end flap valve 1 of preheating cavity 2, closes preheating
Chamber front end flap valve 1 is vacuumized and preheated to preheating cavity 2, after the temperature of photovoltaic crystal silicon piece reaches 250, the He of preheating cavity 2
When the vacuum of alumina technology chamber 3 is identical, the flap valve 1 between preheating cavity 2 and alumina technology chamber 3 is opened, photovoltaic crystal silicon
Piece enters the inside of alumina technology chamber 3 and carries out plating aluminium oxide film；After the completion of plating aluminium oxide film, alumina technology chamber 3 and buffering
When the vacuum of chamber 4 is identical, the flap valve 1 between alumina technology chamber 3 and cushion chamber 4 is opened, and photovoltaic crystal silicon piece enters buffering
Inside chamber 4, pass through the gas stream between the blocking oxide aluminium process cavity 3 of flap valve 1 and nitride process chamber 5 at the both ends of cushion chamber 4
Logical, when cushion chamber 4 is identical with the vacuum of nitridation feed cavity 5, the flap valve 1 between cushion chamber 4 and silicon nitride feed cavity 5 is beaten
Open, photovoltaic crystal silicon piece enters the inside of nitride process chamber 5 and carries out silicon nitride plated film；After the completion of silicon nitride plated film, silicon nitride work
When skill chamber 5 is identical with the vacuum of discharging chamber 6, the flap valve 1 between nitride process chamber 5 and discharging chamber 6 is opened, photovoltaic crystal silicon piece
Into discharging chamber 6, discharging chamber 6 is reached atmospheric pressure finally by nitrogen is filled with, open the flap valve 1 of the rear end of discharging chamber 6, light
Volt crystal silicon chip enters air, completes the preparation of photovoltaic crystal silicon piece laminate film.
Finally it should be noted that listed above is only specific embodiment of the utility model.Obviously, this practicality is new
Type is not limited to above example, can also there is many variations.One of ordinary skill in the art can be from disclosed in the utility model
All deformations for directly exporting or associating in content, are considered as the scope of protection of the utility model.
Claims (2)
1. a kind of automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system, for plating aluminum oxide to cell piece
With silicon nitride stack film, it is characterised in that the automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system
Including preheating cavity, alumina technology chamber, cushion chamber, nitride process chamber, discharging chamber；
The preheating cavity uses aluminum cavity, and the inside of aluminum cavity is provided with heating fluorescent tube, preliminary for being carried out to cell piece
Heating；
The alumina technology chamber uses stainless steel cavity, and stainless steel inside cavity is provided with heating tube A, process gas puff prot
A, microwave source A, the heating tube A are used to fully heat cell piece, and the process gas puff prot A is used to be used as front three
The puff prot of base aluminium, nitrous oxide, the microwave source A can be by exciting plasma to react raw at low temperature for process gas
Condition is provided into aluminum oxide；
The cushion chamber uses aluminum hollow cavity, is arranged between alumina technology chamber and nitride process chamber, for carrying out
Transition；
The nitride process chamber uses stainless steel cavity, and stainless steel inside cavity is provided with heating tube B, process gas puff prot
B, microwave source B, the heating tube B are fully heated for cell piece, the process gas puff prot B be used for as silane,
The puff prot of ammonia, the microwave source B can be carried by exciting plasma to react generation silicon nitride at low temperature for process gas
For condition；
The discharging chamber is aluminum hollow cavity, for being cooled down to cell piece：By vacuumizing and while leading to discharging chamber
Enter high pure nitrogen to realize；
Preheating cavity, alumina technology chamber, cushion chamber, nitride process chamber, discharging chamber are arranged on respective machine by bolt respectively
On frame, and the adjacent connection of bolt is utilized successively；The front end of preheating cavity is provided with flap valve, for blocking between air and preheating cavity
Gas circulates；Flap valve is provided between preheating cavity and alumina technology chamber, for blocking between preheating cavity and alumina technology chamber
Gas circulation；The both ends of cushion chamber are fitted with flap valve, are respectively used to block cushion chamber and alumina technology chamber, silicon nitride
Gas circulation between process cavity；Flap valve is provided between nitride process chamber and discharging chamber, for blocking discharging chamber and nitridation
Gas circulation between silicon technology chamber；The rear end of discharging chamber is provided with flap valve, for blocking the gas between discharging chamber and air
Circulation.
2. a kind of automatic flat-plate formula PECVD aluminum oxide according to claim 1 and silicon nitride stack film preparing system, its
It is characterised by, is additionally provided with perfect safety mutually-locking device and warning function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720724767.8U CN207062372U (en) | 2017-06-21 | 2017-06-21 | Automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720724767.8U CN207062372U (en) | 2017-06-21 | 2017-06-21 | Automatic flat-plate formula PECVD aluminum oxide and silicon nitride stack film preparing system |
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| CN207062372U true CN207062372U (en) | 2018-03-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109055911A (en) * | 2018-10-17 | 2018-12-21 | 苏州善柔电气自动化科技有限公司 | A kind of vacuum coating system of the compound PVD of vertical PECVD |
| CN110735130A (en) * | 2019-11-13 | 2020-01-31 | 湖南红太阳光电科技有限公司 | Tubular PECVD (plasma enhanced chemical vapor deposition) equipment and method for preparing back passivation film |
| CN111628051A (en) * | 2020-06-19 | 2020-09-04 | 湖南红太阳光电科技有限公司 | Flat plate type ALD and PECVD combined equipment for growing aluminum oxide and silicon nitride films |
-
2017
- 2017-06-21 CN CN201720724767.8U patent/CN207062372U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109055911A (en) * | 2018-10-17 | 2018-12-21 | 苏州善柔电气自动化科技有限公司 | A kind of vacuum coating system of the compound PVD of vertical PECVD |
| CN110735130A (en) * | 2019-11-13 | 2020-01-31 | 湖南红太阳光电科技有限公司 | Tubular PECVD (plasma enhanced chemical vapor deposition) equipment and method for preparing back passivation film |
| CN110735130B (en) * | 2019-11-13 | 2021-11-26 | 湖南红太阳光电科技有限公司 | Tubular PECVD (plasma enhanced chemical vapor deposition) equipment and method for preparing back passivation film |
| CN111628051A (en) * | 2020-06-19 | 2020-09-04 | 湖南红太阳光电科技有限公司 | Flat plate type ALD and PECVD combined equipment for growing aluminum oxide and silicon nitride films |
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