CN114709295B - Method and device for reducing attenuation of perc battery piece - Google Patents
Method and device for reducing attenuation of perc battery piece Download PDFInfo
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- CN114709295B CN114709295B CN202210627572.7A CN202210627572A CN114709295B CN 114709295 B CN114709295 B CN 114709295B CN 202210627572 A CN202210627572 A CN 202210627572A CN 114709295 B CN114709295 B CN 114709295B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 48
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 32
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 13
- 230000000694 effects Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 27
- 239000002245 particle Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a method and a device for reducing attenuation of perc battery pieces, which comprises the following steps: placing a silicon substrate below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w; introducing methane and silane into the plasma reactor, controlling the surface of the silicon substrate to be heated to the temperature of a second surface within time t1 under the power of 2500w-3500w, and controlling the gas introduction rate v = Q x h/t1 of the methane and the silane; and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity within 5s to reach 0.1mbar again, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate. The invention optimizes the film coating process of the silicon substrate, thereby forming the attenuation-resistant perc cell structure, and the invention has good integral yield and increased effect.
Description
Technical Field
The invention relates to the technical field of perc batteries, in particular to a method and a device for reducing attenuation of a perc battery piece.
Background
Although perc cells have a higher conversion efficiency, perc cells have a higher attenuation than other crystalline silicon cells, and processes and devices for suppressing attenuation for mono-poly perc cells have also been successively introduced for this purpose. It is considered that attenuation can be suppressed by using low-temperature slurry and by using a means such as gettering, high-temperature annealing, and laser rapid annealing. Factors leading to degradation are still under investigation and, in addition to the conventional B-O pair, there are still unknown factors under investigation that may be associated with higher metal impurity levels in polysilicon.
The invention adopts a new method and a new device to prepare the perc battery with better anti-attenuation effect.
Disclosure of Invention
The present invention is directed to a method for reducing attenuation of perc cells to solve the above problems.
To achieve the above object, in one aspect, the present invention provides a method for reducing attenuation of a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q x h/t1 x D of the methane and the silane is the heating power, and h is a correlation coefficient; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity within 5s to reach 0.1mbar again, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
The method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the invention establishes a relational expression by the gas speed, the power, the heating time and the outlet caliber, so that the reaction temperature and the reaction time are kept at the optimal conditions, and the conditions of low yield and unstable product performance caused by uncertain factors in the reaction are avoided.
In a preferred embodiment of the present invention, the silicon substrate is taken out and left standing for 30min at a third surface temperature, and then is placed in a room temperature environment, wherein the third surface temperature is 1/2 of the second surface temperature.
And (3) slowly cooling the silicon substrate after being taken out for 30min instead of directly and rapidly cooling the silicon substrate, wherein the cooling temperature is half of the highest temperature so as to stabilize the performance of the silicon substrate after reaction.
In a preferred embodiment of the invention, the discharge is pulsed at a frequency of 30 Hz.
Because the temperature at the outlet of the reactor is higher and can reach 2000 ℃ at most, the continuous discharge can not only increase the temperature too fast and be unfavorable for producing active particles, but also can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and overhigh temperature is avoided.
In a preferred embodiment of the present invention, the ratio of the introduced contents of the methane gas and the silane gas is in the range of 15 to 20: 1.
The thickness of the silicon nitride is adjusted by the ratio of the introduced mixed gas, wherein the ratio of the introduced contents of the methane gas and the silane gas is in a range of 15-20:1, which is a preferable ratio.
In a preferred embodiment of the present invention, the first surface temperature is 600-700 ℃, and the second surface temperature is 900-1100 ℃.
In a preferred embodiment of the present invention, the outlet of the plasma reactor has a ceramic tubular structure.
The ceramic has good high temperature resistance, and the outlet of the ceramic is made of ceramic materials, so that the effective working time of the reactor can be prolonged, and the efficiency is improved.
In a preferred embodiment of the present invention, the outlet of the reactor is located at a distance of 10cm to 20cm from the surface of the silicon substrate.
The outlet distance of the reactor is controlled in a reasonable range, so that heat can be quickly transferred, and good reaction of active particles can be ensured.
In a preferred embodiment of the present invention, the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable by a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under a fixed power condition according to the temperature value and the gas content in the cavity.
Due to the changes of reaction voltage, current and gas content, which inevitably affect the stability of reaction conditions, the distance is adaptively adjusted according to the temperature value and the gas content by controlling the motor to maintain the reaction temperature at the optimal temperature in real time.
In another aspect of the invention, the invention provides a device for reducing attenuation of perc battery pieces, which comprises a cavity, a plasma reactor, a gas supply unit and a controller;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor and the gas inflow and backflow rates of the gas supply unit according to the temperature value and the gas content.
The device can automatically control parameters of the reactor, gas supply flow, circulating gas flow and power through the controller, and realizes accurate control of reaction conditions.
Wherein through the design of backward flow mouth make between reactor and the cavity constitute the air current circulation, let in the secondary ionization in the reactor again at unreacted active particle to promote the effective active ingredient in the cavity fast, improve reaction efficiency.
In a preferred embodiment of the present invention, the outlet of the reactor is a telescopic structure, and the telescopic structure is driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is guaranteed to be constant after reaching a specified value.
The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
Compared with the prior art, the invention has the beneficial effects that:
1. the method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the method establishes a relational expression by the gas speed, the power and the heating time so as to keep the reaction temperature and the reaction time at the optimal conditions, and avoids the conditions of low yield and unstable product performance caused by uncertain factors in the reaction.
2. Because the temperature at the outlet of the reactor is higher and can reach 2000 ℃ at most, the continuous discharge can not only increase the temperature too fast and be unfavorable for producing active particles, but also can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and the overhigh temperature is avoided.
3. The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
a method of reducing attenuation in a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q x h/t1 x D of the methane and the silane is the heating power, and h is a correlation coefficient; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity within 5s to reach 0.1mbar again, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
Specifically, the value of the coefficient h is 15 to 20.
The method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the method establishes a relational expression by the gas speed, the power and the heating time so as to keep the reaction temperature and the reaction time at the optimal conditions, and avoids the conditions of low yield and unstable product performance caused by uncertain factors in the reaction.
In a preferred embodiment of the present invention, the silicon substrate is taken out and left standing for 30min at a third surface temperature, and then is placed in a room temperature environment, wherein the third surface temperature is 1/2 of the second surface temperature.
And (3) slowly cooling the silicon substrate taken out for 30min instead of directly and rapidly cooling the silicon substrate, wherein the cooling temperature is half of the highest temperature so as to stabilize the performance of the silicon substrate after reaction.
In a preferred embodiment of the invention, the discharge is pulsed at a frequency of 30 Hz.
Because the temperature at the outlet of the reactor is high, up to 2000 ℃, the continuous discharge can heat up too fast, which is not beneficial to producing active particles, and can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and the overhigh temperature is avoided.
In a preferred embodiment of the present invention, the ratio of the introduced methane gas to the introduced silane gas is in the range of 15 to 20: 1.
The thickness of the silicon nitride is adjusted by the ratio of the introduced mixed gas, wherein the ratio of the introduced contents of the methane gas and the silane gas is in a range of 15-20:1, which is a preferable ratio.
In a preferred embodiment of the present invention, the first surface temperature is 600-700 ℃, and the second surface temperature is 900-1100 ℃.
In a preferred embodiment of the present invention, the outlet of the plasma reactor has a ceramic tubular structure.
The ceramic has good high temperature resistance, and the outlet of the ceramic is made of ceramic materials, so that the effective working time of the reactor can be prolonged, and the efficiency is improved.
In a preferred embodiment of the present invention, the outlet of the reactor is located at a distance of 10cm to 20cm from the surface of the silicon substrate.
The outlet distance of the reactor is controlled in a reasonable range, so that heat can be quickly transferred, and good reaction of active particles can be ensured.
In a preferred embodiment of the present invention, the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable by a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under a fixed power condition according to the temperature value and the gas content in the cavity.
Due to the changes of reaction voltage, current and gas content, which inevitably affect the stability of reaction conditions, the distance is adaptively adjusted according to the temperature value and the gas content by controlling the motor to maintain the reaction temperature at the optimal temperature in real time.
Example 2
The invention provides a device for reducing attenuation of a perc cell, which comprises a cavity, a plasma reactor, an air supply unit and a controller, wherein the cavity is provided with a plurality of air holes;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor, the gas inflow of the gas supply unit and the flow of the reflux port according to the temperature value and the gas content.
The device can automatically control parameters of the reactor, gas supply flow, circulating gas flow and power through the controller, and realizes accurate control of reaction conditions.
Wherein through the design of backward flow mouth make between reactor and the cavity constitute the air current circulation, let in the secondary ionization in the reactor again at unreacted active particle to promote the effective active ingredient in the cavity fast, improve reaction efficiency.
In a preferred embodiment of the present invention, the outlet of the reactor is a telescopic structure, and the telescopic structure is driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is guaranteed to be constant after reaching a specified value.
The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A method of reducing attenuation in a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w; the discharge adopts a pulse form, and the pulse frequency is 30 Hz; the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable through a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under the condition of fixed power according to the temperature value and the gas content in the cavity;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q h/t 1D of the methane and the silane is v = Q h/t 1D, wherein Q is the heating power, h is a correlation coefficient, and the value of h is 15-20; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity to reach 0.1mbar within 5s, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
2. The method of claim 1, wherein the silicon substrate is removed and allowed to stand at a third surface temperature for 30min and then placed in a room temperature environment, wherein the third surface temperature is 1/2 degrees f the second surface temperature.
3. The method of reducing attenuation in perc cells of claim 1, wherein the methane and silane gases are introduced at a ratio in the range of 15-20: 1.
4. The method of claim 1, wherein the first surface temperature is 600-700 ℃ and the second surface temperature is 900-1100 ℃.
5. The method of reducing attenuation in perc cells of claim 1, wherein the outlet of the plasma reactor is a ceramic tubular structure.
6. The method of reducing attenuation in perc cells of claim 5, wherein the outlet of the reactor is located from 10cm to 20cm from the surface of the silicon substrate.
7. A device for reducing attenuation of perc cells, for use in a method according to any of claims 1 to 6, comprising a chamber, a plasma reactor, a gas supply unit and a controller;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor and the gas inflow and backflow rates of the gas supply unit according to the temperature value and the gas content.
8. The apparatus for reducing attenuation in perc cells of claim 7, wherein the outlet of said reactor is a telescoping structure, said telescoping structure being driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is kept constant after reaching a specified value.
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| CN202210627572.7A CN114709295B (en) | 2022-06-06 | 2022-06-06 | Method and device for reducing attenuation of perc battery piece |
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| CN202210627572.7A CN114709295B (en) | 2022-06-06 | 2022-06-06 | Method and device for reducing attenuation of perc battery piece |
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| CN110965044A (en) * | 2019-09-09 | 2020-04-07 | 浙江爱旭太阳能科技有限公司 | Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof |
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