JP3128929B2 - Microwave plasma processing apparatus and processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an axially symmetric plasma generation chamber having a microwave transmission window on an axis line for converting an introduced plasma generation gas into a plasma state, and a plasma chamber arranged coaxially with the plasma generation chamber. A solenoid coil that forms a magnetic field region where electron cyclotron resonance with microwaves is generated in the generation chamber, and a workpiece to be irradiated with plasma is arranged on a side of the microwave transmission window facing a surface of the microwave generation window facing the space inside the plasma generation chamber. Plasma processing apparatus having a stage for supplying a reaction gas to the microwave transmission window side of the object to be processed, and a film forming or etching process of the object using the apparatus. And the processing method.

[0002]

2. Description of the Related Art FIG. 10 shows a microwave plasma CVD apparatus disclosed in JP-A-56-155535 as an example of a conventional microwave plasma processing apparatus. Microwaves oscillated by a microwave source (not shown) pass through the waveguide 1, pass through the microwave transmission window 2, and are introduced into the plasma generation chamber 3 kept in a vacuum by a vacuum exhaust device (not shown). The plasma generation gas is supplied to the plasma generation chamber 3 through a gas introduction pipe 4, and the microwave and a magnetic field formed in the plasma generation chamber 3 by a solenoid 5 disposed coaxially around the plasma generation chamber 3 that is axially symmetric. Microwave plasma is generated by the action.

The plasma moves downward along the divergent magnetic field formed by the solenoid 5 and is placed in a reaction chamber 7 on a stage 8 to which high-frequency power can be applied from a high-frequency power supply outside the reaction chamber. Wafer 9 to be processed
Is irradiated. A reaction gas is supplied to the reaction chamber 7 through a gas introduction pipe 10. To absorb the microwave power to efficiently plasma, when the plasma generation chamber 3 cylindrical cavity structure (e.g., a microwave resonant mode of the TE ₁₁₃ mode, approximately the diameter at inner dimension 200mm, a height of about 200mm
A metal plasma extraction window 12 having an opening is provided between the reaction chamber 7 and the reaction chamber 7. Note that, in the figure, a water cooling pipe of the plasma generation chamber 3 is omitted for easy viewing of the figure. In such an apparatus, when a silicon nitride film is formed on the wafer surface, for example, a microwave frequency of 2.45 GHz, which is generally used industrially, is used, and a magnetic flux density of 875 gauss is set in the plasma generation chamber. A region is formed, and for example, a nitrogen gas is used as a plasma generation gas, and a silane gas is used as a reaction gas. Nitrogen gas is efficiently ionized by the electron cyclotron resonance effect of microwave electric and magnetic fields,
Collision with silane gas activates it and forms a silicon nitride film on the wafer. When the high-frequency power is applied to the stage 8 to form a film, the film can be formed according to the purpose, such as densification of the film and improvement of step coverage.

[0004]

In the so-called ECR (Electron Cyclotron Resonance) type microwave plasma processing apparatus configured as described above, at present, uniform film thickness distribution and improvement in film forming speed are always problems. Exists as In order to improve the film formation rate, the stage may be brought closer to the plasma generation chamber and the wafer may be irradiated with higher density plasma. More preferably, by positioning the stage in the plasma generation chamber, the maximum possible deposition rate can be obtained. For this reason, the device is
As shown in the figure, the stage is formed so as to be able to enter and exit the plasma generation chamber, and the distance between the stage and the microwave transmission window is set to １ ／ or less of the wavelength of the microwave plasma generation chamber, and the gas used for film formation is formed. Of the present invention has been proposed by the present inventors (Japanese Patent Application No. 2-253730). In this case, the conventional reaction chamber (reference numeral 7 in FIG. 10) functions only as a wafer transfer chamber.

[0005] On the other hand, the improvement of the film thickness distribution is due to a planar electron cyclotron resonance region where electron cyclotron resonance occurs.
It is disclosed in Japanese Patent Application Nos. 3-18138 and 3-51789 that the plasma density (hereinafter referred to as an ECR surface) can be achieved by forming a flat surface to make the in-plane distribution of plasma density uniform. Then, in order to form a flat ECR surface, the solenoid is arranged so that the stage-side end surface of the solenoid is located near the microwave transmission window, and a flat ECR surface is formed.
An apparatus in which the R-plane is formed near the microwave is proposed in both applications.

[0006] Further, the uniformity of the film thickness distribution can be improved by allowing the reaction gas to uniformly reach the wafer surface even if the ECR surface is a curved surface as in a microwave plasma processing apparatus having a conventional configuration. Inventor's proposal: Japanese Patent Application No. 1-1
No. 14808. In this proposal, an annular gas nozzle arranged on the front side of the stage is operated in the axial direction, or a plurality of annular gas nozzles are arranged coaxially, and each annular gas nozzle reacts through independent gas flow rate adjusting means. The gas is sent in, and the reaction gas is discharged radially or axially from each annular gas nozzle into the space on the front side of the stage.

An object of the present invention is to supplement these proposals and to realize a structure of a microwave plasma processing apparatus capable of simply realizing the intent of the proposals, and to provide a uniform thickness distribution of an object to be processed by the apparatus having this structure. It is an object of the present invention to provide a processing method aiming at improving both the properties and the film forming speed.

[0008]

In order to solve the above-mentioned problems, the present invention provides an axially symmetric plasma generation chamber having a microwave transmission window on an axis and bringing an introduced plasma generation gas into a plasma state. A solenoid coil arranged coaxially with the plasma generation chamber and forming a magnetic field region in which electron cyclotron resonance with microwaves is generated in the plasma generation chamber; and a side of the microwave transmission window facing the surface of the microwave generation window on the space side inside the plasma generation chamber. A microwave plasma processing apparatus having a stage for arranging an object to be plasma-irradiated and a reaction gas inlet for supplying a reaction gas to a microwave transmission window side of the object to be processed, An apparatus for setting the position of the surface to be processed within a range of 20 to 130 mm from the reaction gas inlet to the side opposite to the microwave transmission window.
(Hereinafter, this device is referred to as a first device).

This device is further configured as a device for forming a magnetic field region in which electron cyclotron resonance occurs between the object to be processed and the microwave transmission window (hereinafter, this device is referred to as a second device). Further, the second device is configured as a device for forming a shape of a magnetic field region in which electron cyclotron resonance occurs on a flat surface (hereinafter, this device is referred to as a third device. It is an apparatus of the invention.).

[0010] In the first or second apparatus, the reaction gas inlet is formed by an annular space formed between the inner wall surface and the outer wall surface of the plasma generation chamber and having a circumferential direction coinciding with the both wall surfaces. It is preferable to provide a uniform distribution of the amount of gas that reaches the surface to be processed through the inner wall surface (hereinafter, this device is referred to as a fourth device. Device.) Specifically, the fourth device is configured to provide a plurality of reaction gas inlets at equal intervals in the circumferential direction of the wall surface of the plasma generation chamber, all having the same diameter, and having a total conductance substantially corresponding to the conductance of the annular space circumferential flow path. It is preferable that the device is formed to have a size that can be neglected in general (hereinafter, referred to as
This device is called a fifth device. This device is the device according to the fourth aspect of the present invention. ).

Further, a third, fourth or fifth device is
The solenoid coil is arranged so that the stage-side end surface of the solenoid coil is positioned near the microwave transmission window, and a flat electron cyclotron resonance magnetic field area surface is formed near the microwave transmission window, and the stage is positioned near the microwave transmission window. It is more preferable that the apparatus can be arranged in the apparatus (hereinafter, this apparatus is referred to as a sixth apparatus. This apparatus is the apparatus according to the fifth aspect of the present invention).

A processing method for processing an object to be processed by using the third, fourth, fifth or sixth apparatus is as follows. The method is set and processed within a distance of one wavelength in a vacuum of microwave from the surface on the inner space side. In this processing method, in particular, the electron cyclotron resonance magnetic field region surface may be formed at a position not more than の of the wavelength of the microwave plasma generation chamber from the surface of the microwave transmission window on the space side inside the plasma generation chamber. More preferred.

[0013]

According to the present invention, the film forming speed is controlled by the EC in the apparatus.
The microwave transmission through the ECR surface and the surface to be processed depends on the position of the R surface and the surface of the surface to be processed, and in particular, based on the experimental results of the present inventor, which largely depend on the position of the reaction gas inlet. 1/2 of microwave wavelength from window
In the processing method that is located within the following distance, in terms of device operation,
This was done in consideration of the small space margin.

FIG. 3 shows the relationship between the position of the surface to be processed, that is, the distance between the film forming position and the silane gas inlet, and the film forming speed when a silicon oxide film is formed using oxygen gas as the plasma generating gas and silane gas as the reactive gas. Show the relationship. In this experiment,
The ECR surface was formed 20 mm closer to the microwave transmitting window than the silane gas inlet. Further, the horizontal axis of the figure shows the film thickness during the same film forming time, and also shows the relative value of the film forming speed. At a distance L <0 mm, the film is hardly formed, but the film forming speed increases as the surface to be processed moves away from the gas inlet to the side opposite to the ECR surface, reaches a maximum near L = 50 mm, and starts to decrease after L = 50 mm.

The change in the film forming speed will be qualitatively described with reference to FIG. Oxygen plasma generated in the electron cyclotron resonance region performs ambipolar diffusion along a magnetic field.
On the way, the density attenuates in proportion to e ^−L due to divergence and recombination. On the other hand, silane radicals are generated by collision of silane gas with electrons in plasma, and therefore increase in proportion to 1-e- ^L in an atmosphere having a constant plasma density. Therefore, the product of oxygen plasma density and silane radical density e ^−L ×
(1-e ^-L ) has the intensity distribution shown in FIG. 3, and a region where the film forming rate has a maximum value occurs. Therefore, by configuring the microwave plasma processing apparatus targeted by the present invention in the first apparatus, an apparatus having a high film forming rate can be obtained.

FIG. 5 shows a change in the film forming speed depending on the position of the ECR plane. The film formation position was fixed at a position 50 mm from the silane gas introduction port where the film formation rate was maximized, and the position of the ECR plane was moved to measure the film thickness after the same film formation time. When the ECR surface is moved to the processing object, the film thickness increases. This is because the oxygen plasma density is higher as it is closer to the plasma generation region. As the resonance region passes through the gas inlet, the film thickness begins to decrease. This is because silane radicals are generated between the microwave transmission window and the gas inlet, so that a film is easily formed on the surface of the microwave transmission window in addition to the surface to be processed. After the resonance region has passed through the object, the film thickness sharply decreases because the plasma density near the object decreases. The experimental results show that as long as the ECR surface is between the film formation position and the microwave transmission window, the change in the film formation speed depending on the distance between the ECR surface and the film formation position is gradual. Therefore, by using the microwave plasma processing apparatus as the second apparatus, the film formation rate intended by the first apparatus can be easily realized.

Therefore, if the first or second device is further configured as a device for forming the shape of the magnetic field region where electron cyclotron resonance occurs on a flat surface, FIG. ), The plasma density is made uniform and the film thickness distribution becomes uniform, as shown by the solid line in FIG. 6 (b). Can be.

In the case where the ECR surface is formed into a curved surface, as described above, the film thickness is made uniform by introducing the reaction gas into the plasma space so that the distribution amount reaching the surface to be processed becomes uniform. Can be Therefore, in the first or second apparatus, the reaction gas inlet is formed so as to penetrate through the inner wall surface from an annular space formed between the inner wall surface and the outer wall surface of the plasma generation chamber and having a circumferential direction coinciding with the both wall surfaces. If the gas distribution on the surface to be processed is uniform, the film thickness distribution becomes uniform, and an apparatus excellent in both film forming speed and film thickness distribution can be realized.

Further, by forming an annular space for supplying the reaction gas into the plasma generation chamber within the thickness of the container wall of the plasma generation chamber, the stage and the microwave transmission window are not hindered by the position of the stage. The entire amount of gas can be released into the space between the two stages, and there is no restriction on the setting of the stage position for improving the film forming speed and the film thickness distribution. Therefore, as in the fifth apparatus, a plurality of gas outlets for releasing the reaction gas from the annular space into the plasma generation chamber are arranged at equal intervals in the circumferential direction of the annular space, all have the same diameter, and the total conductance is the annular space. The reactant gas is discharged from the gas discharge port into the space between the stage and the microwave transmission window in a uniform amount in the circumferential direction, for example, by forming the reactant gas into a size substantially negligible with respect to the conductance of the circumferential flow path. Therefore, as described in detail in Japanese Patent Application No. 1-114808, even if the ECR surface is a curved surface and the in-plane distribution of plasma density is non-uniform, a film having a uniform film thickness can be improved. Speed can be formed.

Therefore, the third, fourth or fifth device is
The solenoid coil is arranged so that the stage-side end surface of the solenoid coil is positioned near the microwave transmission window, and a flat electron cyclotron resonance magnetic field area surface is formed near the microwave transmission window, and the stage is positioned near the microwave transmission window. The ECR surface position can be matched to the antinode of the standing wave of the electric field, which maximizes the microwave electric field strength, effectively increasing the density of the plasma that generates silane radicals. Can be done. Therefore, by disposing the stage in the vicinity of the microwave transmitting window in consideration of FIGS. 3 and 5, the film forming speed can be effectively increased.

Therefore, when processing the surface to be processed, if the position of the surface to be processed is set within a distance of one wavelength in the vacuum of microwave from the surface of the microwave transmission window on the side of the space inside the plasma generation chamber, the microwave is In one wavelength of the wave, the ECR surface, the reaction gas inlet, and the film formation position exist, and FIG.
In consideration of FIG. 5 and FIG. 5, it is possible to form a film having a uniform film thickness distribution at a high film forming rate without causing positional unreasonability on the arrangement of the ECR surface, the reaction gas inlet, and the surface to be processed. .

In particular, the surface of the electron cyclotron resonance magnetic field region is set at a distance from the surface of the microwave transmission window on the space side inside the plasma generation chamber to １ ／ of the wavelength of the microwave plasma generation chamber.
If the processing method is formed at the following position, the wavelength can be shortened in the plasma, and the plasma can be generated at a high energy position before the attenuation of the microwave where the electric field peak value is largely attenuated in the traveling direction. It is possible to increase the film speed to the maximum.

[0023]

FIG. 1 shows a first embodiment of a microwave plasma processing apparatus constructed in accordance with the present invention. In the drawings, members or portions corresponding to those in FIGS. 10 and 11 are denoted by the same reference numerals as those drawings. A microwave having a frequency of 2.45 GHz oscillated by a microwave source (not shown) passes through the waveguide 1, passes through the microwave transmission window 2, and is introduced into the plasma generation chamber 3. A solenoid coil 5 is disposed outside the plasma generation chamber 3 coaxially therewith, and an ECR having a magnetic field intensity of 875 gauss closer to the microwave transmitting window than a gas discharge port 31 forming a reaction gas inlet described below. Form a surface. In the plasma generation chamber 3, an annular space 30 is formed between the inner wall surface and the outer wall surface, and a gas discharge port 31 having the same diameter that penetrates the inner wall surface from the annular space 30 and communicates with the inner space of the plasma generation chamber 3. A plurality of gas are formed so as to release gas with a uniform gas amount distribution in the circumferential direction. Since this gas discharge port 31 is opened on the inner wall surface of the plasma generation chamber 3, the position of the gas discharge port 31 can be brought close to the vicinity of the ceiling surface of the plasma generation chamber 3, and the stage 8
Regardless of the size of the wafer, as long as the axial distance between the gas outlet 31 and the gas outlet 31 is kept within the scope of the present invention,
The entire amount of the reaction gas introduced into the film can be introduced to the front side of the stage. Therefore, when oxygen gas is introduced into the plasma generation chamber 3 from above the plasma generation chamber 3 as a plasma generation gas through the plasma generation gas introduction pipe 4, the ECR surface formed near the microwave transmission window 2 of the gas discharge port 31 is formed. Plasma is efficiently formed, and ambipolar diffusion is performed in the direction of the stage by the action of a divergent magnetic field formed by the solenoid coil 5, and silane gas, which is a reaction gas released from the gas discharge port 31, is activated to generate silane radicals. A silicon oxide film is formed on the upper surface of the wafer 9 on 8. The stage 8 is held at a position where the distance from the microwave transmission window 2 is less than or equal to one wavelength of the microwave by using the linear drive mechanism 22 on the upper surface of the wafer 9. Note that, in the figure, a water cooling pipe of the plasma generation chamber 3 is omitted for easy understanding of the figure.

FIG. 8 shows the distribution of film thickness, the amount of gas reaching the wafer, and the distribution of plasma density on the front side of the wafer when a film is formed using this apparatus. Since the geometric center of the solenoid coil 5 is located near the microwave transmitting window, when the ECR surface is formed near the microwave transmitting window,
Even though the ECR surface is curved and the plasma density distribution is considerably non-uniform, the distribution of gas reaching the wafer is uniform on the wafer surface. Has been greatly improved. As comparative data, FIG. 10 shows an example of the film thickness distribution, the distribution of the gas reaching the wafer on the wafer surface, and the distribution of the plasma density on the front surface of the wafer when the reaction gas is discharged into the reaction chamber 7 by the conventional method shown in FIG. It is shown in FIG. According to this, the plasma density (relative value) distribution is the same as in FIG. 8, but the film thickness distribution directly reflects the distribution of the gas reaching the wafer on the wafer surface, and the uniformity is extremely poor.

FIG. 2 shows a second embodiment of the microwave plasma processing apparatus constructed based on the present invention. In this embodiment, a large-diameter (8-inch) wafer is used as an object to be processed, and a rectangular-circular tapered waveguide (from the rectangular cross section of the entrance to the large diameter of the exit) is provided on the plasma generation chamber 3 side as the microwave waveguide. A waveguide 11 whose cross-sectional shape gradually changes toward a circular cross-section is used. Outside the plasma generation chamber 3, a solenoid coil 5 is arranged coaxially therewith.
The end is located near the microwave transmitting window 2 and the flat E
The CR surface 12 is formed. When oxygen gas is introduced as a plasma generation gas from above the plasma generation chamber 3 through the plasma generation gas introduction pipe 4, high-density and uniform oxygen gas plasma is generated. The axial distance from the gas outlet 31 to the upper surface of the wafer 9 is the same as in the first embodiment.
2 is set.

With this apparatus configuration, the wafer 9 on the stage 8
FIG. 10 shows an example of the correspondence between the plasma density distribution and the film thickness distribution when the upper surface is set at a distance within one wavelength of the microwave from the microwave transmission window 2 by the linear drive mechanism. FIG. 6 shows a comparison with the method. In the figure, the solid line is for the device of the present invention, and the broken line is for the conventional device. Also, when a film formation experiment was performed on a wafer having a diameter of 8 inches using this apparatus,
When L (the axial distance between the gas discharge port 6 and the upper surface of the wafer 9) is in the range of 20 to 130 mm, as shown in FIG.
A film thickness distribution in the vicinity was obtained.

[0027]

According to the present invention, the positions of the reaction gas inlet, the surface of the object to be processed, and the surface of the electron cyclotron resonance magnetic field region are set as described above, and the surface of the electron cyclotron resonance magnetic field region is made flat. The reaction gas inlet is formed such that the distribution of the amount of gas reached on the surface to be treated is uniform, so that a film having a uniform film thickness distribution can be formed on the surface to be treated at high speed, and the productivity can be improved. Improvement has become possible. In particular, by setting the surface to be processed at a position of one wavelength or less of the microwave from the microwave transmission window, the surface of the electron cyclotron resonance magnetic field can be further reduced from the microwave transmission window to one half of the wavelength of the plasma generation chamber of the microwave. The effect is remarkable by forming in the following positions.

[Brief description of the drawings]

FIG. 1 is a sectional view of a microwave plasma processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a microwave plasma processing apparatus according to a second embodiment of the present invention;

FIG. 3 is a diagram showing a change in a deposition rate when a position of a surface to be processed is moved while a position of an electron cyclotron resonance magnetic field region surface and a position of a reaction gas inlet are fixed.

FIG. 4 is a diagram showing changes in the plasma density of the plasma generating gas and the reactive gas radical density depending on the position to qualitatively explain the reason why the result of FIG. 3 is obtained;

FIG. 5 is a diagram showing a change in a film forming speed when the position of the reaction gas inlet and the position of the surface to be processed are fixed and the position of the electron cyclotron resonance magnetic field region surface is moved.

FIG. 6 is a diagram showing a plasma density distribution and a film thickness distribution of the apparatus of the present invention in comparison with those of a conventional apparatus.

FIG. 7 is a diagram showing a change in film thickness distribution depending on the position of a surface to be processed, which is obtained simultaneously when the diagram of FIG. 3 is obtained.

8A and 8B are diagrams showing an example of film forming characteristics when a film forming process is performed using the apparatus of FIG. 1, wherein FIG. 8A is a diagram showing a film thickness distribution, and FIG. Is a diagram showing the surface distribution of the amount of reaction gas reaching the wafer, and FIG. 3 (c) is a diagram showing the plasma density distribution on the front side of the wafer.

9A and 9B are diagrams illustrating an example of film forming characteristics when a film forming process is performed using a conventional apparatus, wherein FIG. 9A is a diagram illustrating a film thickness distribution, and FIG. Diagram showing the surface distribution of the amount of reaction gas reaching the wafer, and FIG. 3C shows the plasma density distribution on the front side of the wafer.

FIG. 10 is a cross-sectional view showing a first example of a configuration of a conventional microwave plasma processing apparatus.

FIG. 11 is an apparatus sectional view showing one configuration of a microwave plasma processing apparatus previously proposed by the present inventors.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Waveguide 2 Microwave transmission window 3 Plasma generation chamber 4 Plasma generation gas introduction pipe 5 Solenoid coil 6 Reaction gas introduction port 8 Stage 9 Wafer (object to be processed) 10 Reaction gas introduction pipe 12 Flat ECR surface (Electron cyclotron resonance Magnetic field area surface) 22 Linear drive mechanism 30 Annular space 31 Gas outlet (reaction gas inlet)

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/205 H01L 21/302 H01L 21/31 C23C 16/00

Claims (7)

(57) [Claims] An axially symmetric plasma generation chamber having a microwave transmission window on an axis for converting an introduced plasma generation gas into a plasma state; a microwave generation chamber disposed coaxially with the plasma generation chamber; A solenoid coil for forming a magnetic field region in which electron cyclotron resonance occurs, and a stage for arranging an object to be irradiated with plasma on a side of the microwave transmission window facing a surface of the microwave generation window facing the space inside the plasma generation chamber. In a microwave plasma processing apparatus having a reaction gas inlet for supplying a reaction gas to a microwave transmission window side of a processing object, a position of a processing surface of a processing object is opposite to a microwave transmission window from the reaction gas introduction port. 2 on the side
The magnetic field region where electron cyclotron resonance occurs is formed between the object to be processed and the microwave transmission window, and the shape of the magnetic field region where electron cyclotron resonance occurs is formed on a flat surface while being set in the range of 0 to 130 mm. A microwave plasma processing apparatus characterized by the above-mentioned. 2. An axially symmetric plasma generation chamber having a microwave transmission window on an axis for converting an introduced plasma generation gas into a plasma state, and a microwave generation chamber disposed coaxially with the plasma generation chamber. A solenoid coil for forming a magnetic field region in which electron cyclotron resonance occurs, and a stage for arranging an object to be irradiated with plasma on a side of the microwave transmission window facing a surface of the microwave generation window facing the space inside the plasma generation chamber. In a microwave plasma processing apparatus having a reaction gas inlet for supplying a reaction gas to a microwave transmission window side of a processing object, a position of a processing surface of a processing object is opposite to a microwave transmission window from the reaction gas introduction port. 2 on the side
A reaction gas inlet for supplying a reaction gas to the microwave transmission window side of the object to be processed is formed between the inner wall surface and the outer wall surface of the plasma generation chamber. A microwave plasma processing apparatus provided to penetrate an inner wall surface from an annular space having a circumferential direction coinciding with a circumferential direction, so that a distribution of a reaching gas amount on a surface to be processed is uniform. 3. The microwave plasma processing apparatus according to claim 2, wherein a magnetic field region in which electron cyclotron resonance occurs is formed between the object to be processed and the microwave transmission window. 4. The apparatus according to claim 2, wherein the reaction gas inlet provided to make the distribution of the amount of gas attained on the surface to be processed uniform is provided on a wall surface of the plasma generation chamber. A microwave plasma processing apparatus characterized in that a plurality of them are formed at equal intervals in the circumferential direction, all have the same diameter, and the total conductance is formed to be substantially negligible with respect to the conductance of the annular space circumferential flow path. . 5. A flat electron cyclotron resonance magnetic field according to claim 1, wherein the solenoid coil is arranged such that an end face of the solenoid coil on the stage side is located near the microwave transmission window. A microwave plasma processing apparatus characterized in that a region surface is formed near a microwave transmission window and a stage can be arranged near the microwave transmission window. 6. A method for processing an object to be processed by using the apparatus according to claim 1, wherein the position of the surface of the object to be processed is set inside a plasma generation chamber of a microwave transmission window. A processing method wherein the distance is set within a distance of one wavelength in a vacuum of a microwave from a surface on the space side. 7. The processing method according to claim 6, wherein
A processing method, wherein the surface of the electron cyclotron resonance magnetic field region is formed at a position not more than 1/2 of the wavelength of the microwave in the plasma generation chamber from the surface of the microwave transmission window on the side of the space inside the plasma generation chamber.