CN111403552B - Multi-light-source composite passivation method for reducing crystalline silicon solar cell attenuation - Google Patents
Multi-light-source composite passivation method for reducing crystalline silicon solar cell attenuation Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 title claims abstract description 14
- 230000008929 regeneration Effects 0.000 claims abstract description 18
- 238000011069 regeneration method Methods 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims description 9
- 230000007547 defect Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a composite passivation method for reducing attenuation of a crystalline silicon solar cell by multiple light sources. Placing the battery piece into a regeneration furnace, wherein the regeneration furnace comprises an LED light source passivation area andthe LED light source passivation area is characterized in that the laser passivation area, the LED light source passivation area and the laser passivation area are simultaneously provided with a cold air system, the cold air system can blow cold air into the regeneration furnace and simultaneously recycle hot air, the cold air system and the heat generated by the light source are matched to regulate and control the temperature of an area, the temperature of the LED light source passivation area is 200-350 ℃, the light intensity density of the LED light source passivation area is 15-20 kw/m2(ii) a The temperature of the laser passivation region is 200-350 ℃, and the laser radiation intensity is 10-30 kw/m2And the inside of the regeneration furnace is provided with a furnace conveying device capable of transferring the battery pieces. According to the method, through controlling different laser radiation intensities and temperatures and matching with an LED light source passivation process, defects and impurities in the crystalline silicon cell are passivated better, the reliability of the crystalline silicon cell is improved effectively, and the conversion efficiency and the light utilization rate of the solar cell are improved.
Description
Technical Field
The invention relates to a crystalline silicon solar cell passivation method, in particular to a multi-light-source composite passivation method for reducing attenuation of a crystalline silicon solar cell.
Background
With the continuous development of the crystalline silicon solar cell technology, the efficiency of the crystalline silicon solar cell is gradually improved, and the reliability problem is also highlighted, which mainly shows Light Induced Degradation (LID), electrogenerated degradation (CID) and the like. At present, the PERC cell is a mainstream high-efficiency current in the photovoltaic industry, but the attenuation reliability of the PERC cell is more serious than that of a conventional aluminum back cell, the attenuation is mainly caused by B/O (boron/oxygen) defect formation, and in order to solve the defect problem, the defects are passivated by mainly treating with a light-induced regeneration technology (LIR) of a light source regeneration furnace and exciting hydrogen in a dielectric film in the industry.
The traditional light source regeneration furnace mainly uses a halogen lamp as a radiation light source, the service life of the halogen lamp is short, the illumination intensity is weak, and the halogen lamp is gradually eliminated by the industry. At present, a light source regeneration furnace in the mainstream industry is an online light source regeneration furnace (LIR), a light source mainly comprises an LED lamp array with a certain wavelength, the service life is long, the illumination intensity is strong, and a crystalline silicon battery can be effectively passivated at a certain temperature. After the LIR is integrated with the sintering furnace, the passivation process time can be correspondingly reduced under the influence of the speed of the furnace belt and the printing productivity, and meanwhile, the illumination radiation of the LED lamp is relatively diffused and the passivation effect is relatively weak.
Disclosure of Invention
The invention provides a composite passivation method for reducing attenuation of a crystalline silicon solar cell by multiple light sources; the problem of exist among the prior art passivation effect not good is solved.
The technical problem of the invention is mainly solved by the following technical scheme: a composite passivation method for reducing attenuation of a crystalline silicon solar cell by multiple light sources is characterized by comprising the following steps: the battery piece is placed into a regeneration furnace, the regeneration furnace comprises an LED light source passivation area and a laser passivation area, cold air systems are arranged in the LED light source passivation area and the laser passivation area at the same time, cold air can be blown into the regeneration furnace by the cold air systems and hot air can be recycled at the same time, heat generated by the cold air systems and the light source is matched to regulate and control the temperature of an area where the cold air systems and the light source are located, the temperature of the LED light source passivation area is 200-350 ℃, and the light intensity density of the LED light source passivation area is 15-20 kw/m2(ii) a The temperature of the laser passivation area is 200-350 ℃, and the laser radiation intensity is 10-30 kw/m2And the inside of the regeneration furnace is provided with a furnace conveying device capable of transferring the battery pieces.
The invention discloses an integrated LED light source and a laser passivation method, wherein a crystalline silicon cell is subjected to laser passivation treatment in an LED light source passivation region and low radiation intensity at a certain temperature, and then a hydrogen-containing dielectric film is activated to passivate impurities and defects in the crystalline silicon cell.
Preferably, the passivation region of the LED light source can be further divided into 3 independent passivation regions, the light intensity density and the passivation temperature in each passivation region can be within a set range, and the passivation temperature can be automatically adjusted according to actual conditions.
Preferably, the LED light source passivation area and the laser passivation area are linearly arranged front and back, the conveying device in the furnace is a linear conveying belt, the speed of the furnace belt is 7-12 m/min, and the total length of the LED light source passivation area is 3-5 m.
Preferably, the wavelength of the LED light source in the LED light source passivation area is 300-1100 nm.
Preferably, the laser wavelength of the irradiation source in the laser passivation area is 900-1100 nm.
Preferably, a sensor is arranged on the front side of the laser radiation area in the laser passivation area, and the cell slice is subjected to laser scanning treatment after passing through the sensor.
Preferably, in the laser passivation region, the laser radiation is two-section scanning, and the intensity of the first section is 20-30 kw/m2The length of the first section of the cell slice is 0.2-0.5 m, and the strength of the second section is 10-20 kw/m2And (5) performing radiation scanning passivation treatment to perform compensation passivation on the battery piece, wherein the length of the second section is 0.2-0.5 m.
Preferably, a hot air circulation pipeline is arranged in the regeneration furnace, hot air generated after cold air discharged by the cold air system passes through the LED light source passivation area can supply heat to the laser passivation area again through the hot air circulation pipeline, and the hot air is used for stably controlling the laser passivation temperature.
Preferably, the rear side of the passivation area is provided with a quick cooling area, a cold air system is arranged in the quick cooling area, and the passivated battery piece is conveyed by a conveying device and enters the quick cooling area, so that the temperature of the battery piece is immediately reduced to room temperature, and the stability of the passivation effect is kept.
Therefore, compared with the prior art, the invention has the following characteristics: 1. an LED light source and a low-intensity laser combined passivation mode are adopted, laser radiation energy is concentrated, the crystalline silicon battery passivation device has a good effect on passivation, and low-radiation-intensity laser passivation is adopted to improve the passivation effect; 2. meanwhile, in the method, the residual heat after the LED light source radiates or the residual heat after sintering is used as the laser passivation temperature, the laser passivation temperature is stably controlled through a thermal circulation air system, the cost is low, the method is simple and convenient to operate, and the mass production can be realized.
Drawings
FIG. 1 is a schematic diagram of embodiment 1 of the present invention;
FIG. 2 is a schematic diagram of embodiment 2 of the present invention;
FIG. 3 is a box curve plot of the photo-decay values of the PERC cell in example 1;
FIG. 4 is a graph showing the box line variation of the electrical attenuation values of the PERC cell in example 2;
FIG. 5 is a graph of the box line variation of the electrical attenuation of the PERC cell in example 3.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
Example 1: referring to fig. 1, the PERC single-sided battery 1 is sintered after being printed, then moves backwards along with a conveyor belt in a furnace, the conveying speed is 7.2m/min, and passes through an LED light source passivation area A, a laser passivation area B and a rapid cooling area E in sequence, wherein the light density of 3 independent passivation areas in the LED light source passivation area is set at 17kw/m2The process temperature is 270 ℃, and the total length of an LED light source passivation area is 4 m; in the laser passivation area, the laser radiation is two-section scanning, and the laser intensity of the first section of laser passivation is set to be 25kw/m2The second stage is set to 15kw/m2The process temperature is 270 ℃, the length of the first section is 0.3m, and the length of the second section is 0.3 m; the cold air system in the LED light source passivation area, the laser passivation area B and the rapid cooling area E ventilates from top to bottom, the light source in the LED light source passivation area is an LED array plate 2, the light source in the laser passivation area B is two lasers 3, an infrared inductor 4 is arranged on the front side of each laser 3, and partial hot air flow in the LED light source passivation area can supply heat to the laser passivation area through a hot air circulation pipeline 5.
And (3) carrying out light-induced attenuation detection on the passivated cell, wherein the detection conditions are as follows: 50 degree, 1000w/m2In light, the Light Induced Degradation (LID) decreased from 0.90% to 0.50% for 5 hours, with good dispersion (see fig. 3).
The relevant measured cell efficiency and Light Induced Degradation (LID) data are shown in the following table: the experimental group is the cell treated by the method of the embodiment 1, and the control group is the cell treated only by the passivation region of the LED light source.
Example 2: the PERC single-sided battery 1 is sintered after being printed, then moves backwards along with a conveyor belt in a furnace, the conveying speed is 7.2m/min, and the PERC single-sided battery passes through a laser passivation area B, LED light source passivation area A and a rapid cooling area E in sequence, and other parts are the same as those in the embodiment 1 and are not described again.
And (3) carrying out photoinduced attenuation detection on the passivated cell piece, wherein the detection conditions are as follows: the electrogenerated degradation (CID) was reduced from 1.90% to 1.35% at 110 degrees and 1A current for 8 hours, and the dispersion was good (see FIG. 4).
The relevant measured cell efficiency and electrodecay (CID) data are shown in the following table: the experimental group was the cell treated by the method of this example 2, and the control group was the cell treated only by the LED light source passivation region.
Example 3: wherein, in the laser passivation area, the laser radiation is two-section scanning, and the laser intensity of the first section of laser passivation is set to be 30kw/m2The second stage is set to 20kw/m2The process temperature is 250 ℃, the length of the first section is 0.3m, and the length of the second section is 0.3 m; the light density of 3 independent passivation areas in the passivation area of the LED light source is set at 20kw/m2The process temperature is 260 ℃, the total length of the passivation region of the LED light source is 4m, and other parts are the same as those in embodiment 2 and are not described again.
Detecting the passivated cell piece by electrogenerated attenuation, wherein the detection conditions are as follows: the electrogenerated degradation (CID) was reduced from 1.5% to 0.80% at 110 degrees, 1A current, for 8 hours of treatment, and the dispersion was good (see FIG. 5).
The relevant measured cell efficiency and electrodecay (CID) data are shown in the following table: the experimental group was the cell treated by the method of example 3, and the control group was the cell treated only by the LED light source passivation region.
It will be apparent to those skilled in the art that the present invention may be modified in numerous ways, and that such modifications do not depart from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claims.
Claims (8)
1. A composite passivation method for reducing attenuation of a crystalline silicon solar cell by multiple light sources is characterized by comprising the following steps: the battery piece is placed into a regeneration furnace, the regeneration furnace comprises an LED light source passivation area (A) and a laser passivation area (B) which are arranged in a linear front-back mode, a cold air system (C) is arranged in the LED light source passivation area (A) and the laser passivation area (B) at the same time, heat generated by the cold air system and a light source is matched to regulate and control the temperature of an area where the cold air system and the light source are located, the temperature of the LED light source passivation area is 200-350 ℃, and the light intensity density of the LED light source passivation area is 15-20 kw/m2(ii) a The temperature of the laser passivation area is 200-350 ℃, and the laser radiation intensity is 10-30 kw/m2The inside of the regeneration furnace is provided with a furnace conveying device (D) for transferring the battery pieces; the hot air generated by the cold air system (C) after passing through the LED light source passivation area (A) supplies heat to the laser passivation area (B) again through a hot air circulation pipeline; the conveying device (D) in the furnace bears the battery plates to sequentially pass through the LED light source passivation area (A) and the laser passivation area (B), or the conveying device (D) in the furnace bears the battery plates to sequentially pass through the laser passivation area (B) and the LED light source passivation area (A).
2. The multiple light source composite passivation method for reducing the attenuation of the crystalline silicon solar cell according to claim 1, characterized in that: the LED light source passivation area is divided into 3 independent passivation areas.
3. The multiple light source composite passivation method for reducing the attenuation of the crystalline silicon solar cell according to claim 1 or 2, characterized in that: the conveying device (D) in the furnace is a linear conveying belt, the belt speed of the conveying belt is 7-12 m/min, and the total length of the LED light source passivation area is 3-5 m.
4. The multiple light source composite passivation method for reducing crystalline silicon solar cell attenuation according to claim 3, characterized in that: and in the LED light source passivation area, the wavelength of an LED light source is 300-1100 nm.
5. The multiple light source composite passivation method for reducing crystalline silicon solar cell attenuation according to claim 3, characterized in that: in the laser passivation area, the laser wavelength of the irradiation source is 900-1100 nm.
6. The multiple light source composite passivation method for reducing crystalline silicon solar cell attenuation according to claim 5, characterized in that: in the laser passivation area, a sensor is arranged on the front side of the laser radiation area, and the cell slice is subjected to laser scanning treatment after passing through the sensor.
7. The multiple light source composite passivation method for reducing crystalline silicon solar cell attenuation according to claim 6, characterized in that: in the laser passivation area, laser radiation is scanned in two sections, and the intensity of the first section is 20-30 kw/m2The length of the first section of the cell slice is 0.2-0.5 m, and the strength of the second section is 10-20 kw/m2And (4) performing radiation scanning passivation treatment to perform compensation passivation on the battery piece, wherein the length of the second section is 0.2-0.5 m.
8. The multiple light source composite passivation method for reducing crystalline silicon solar cell attenuation according to claim 3, characterized in that: the rear area of the regeneration furnace is provided with a quick cooling area (E), a cold air system (C) is also arranged in the quick cooling area (E), the passivated battery piece is conveyed by a conveying device and enters the quick cooling area, and the temperature of the battery piece is reduced to the room temperature.
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| CN106711285A (en) * | 2016-12-28 | 2017-05-24 | 东方环晟光伏（江苏）有限公司 | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof |
| CN109004064B (en) * | 2018-07-26 | 2020-06-26 | 浙江晶科能源有限公司 | Manufacturing method of P-type battery piece |
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