CN110176522A - A kind of alkaline etching technique of SE solar battery - Google Patents
A kind of alkaline etching technique of SE solar battery Download PDFInfo
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- CN110176522A CN110176522A CN201910511867.6A CN201910511867A CN110176522A CN 110176522 A CN110176522 A CN 110176522A CN 201910511867 A CN201910511867 A CN 201910511867A CN 110176522 A CN110176522 A CN 110176522A
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- 238000005530 etching Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 239000003513 alkali Substances 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 42
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 17
- 229910052755 nonmetal Inorganic materials 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 13
- 239000007791 liquid phase Substances 0.000 claims description 12
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000001110 calcium chloride Substances 0.000 claims description 9
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229920002521 macromolecule Polymers 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000858 Cyclodextrin Polymers 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- 239000001116 FEMA 4028 Substances 0.000 claims description 3
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 claims description 3
- 235000011175 beta-cyclodextrine Nutrition 0.000 claims description 3
- 229960004853 betadex Drugs 0.000 claims description 3
- 229960003511 macrogol Drugs 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 241000209140 Triticum Species 0.000 claims 1
- 235000021307 Triticum Nutrition 0.000 claims 1
- 235000013312 flour Nutrition 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- -1 ozone Metal oxide Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of alkaline etching technique of SE solar battery, includes the following steps: 1) to spread；2) radium-shine doping；3) it prepares alkali resistant etching mask: preparing one layer of alkali resistant etching mask in front side of silicon wafer；4) silicon chip back side PSG is removed；5) alkaline etching；6) alkali resistant etching mask and front side of silicon wafer PSG are removed；7) cleaning, drying.The present invention its after radium-shine doping, before removal silicon chip back side PSG, prepare one layer of alkali resistant etching mask in front side of silicon wafer, which can protect laser slotting region during alkaline etching, avoid laser slotting region by alkaline etching corrosion.
Description
Technical field
The present invention relates to a kind of alkaline etching techniques of SE solar battery.
Background technique
SE(Selective Emitter selective emitter) in solar battery manufacturing process, in order to metal grid lines
(electrode) and the progress of silicon wafer contact site are heavily doped, need to carry out laser to crystal silicon diffusion sheet according to grid line pattern using radium-shine equipment
It slots heavily doped, but during laser scanning, the PSG in laser slotting region can be destroyed, and in subsequent alkaline etching, be destroyed
PSG is not enough to protect laser slotting region, and laser slotting region can be by alkaline etching corrosion, so that short circuit current, open-circuit voltage
It is low with fill factor.
Summary of the invention
The purpose of the present invention is to provide a kind of alkaline etching techniques of SE solar battery, after radium-shine doping, go
Before silicon chip back side PSG, one layer of alkali resistant etching mask is prepared in front side of silicon wafer, which can be in alkaline etching process
Middle protection laser slotting region, avoids laser slotting region by alkaline etching corrosion.
To achieve the above object, the present invention provides a kind of alkaline etching technique of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) it prepares alkali resistant etching mask: preparing one layer of alkali resistant etching mask in front side of silicon wafer；
4) silicon chip back side PSG is removed；
5) alkaline etching.
Preferably, in step 3), alkali resistant etching mask are as follows: the macromolecule prepared using physical film deposition method in front side of silicon wafer is multiple
Film, or the metal oxide film prepared using liquid phase deposition in front side of silicon wafer are closed, or using liquid phase deposition in front side of silicon wafer
The nonmetal oxide film of preparation.
Preferably, in step 3), alkali resistant etching mask with a thickness of 2~20nm.
Preferably, in step 3), alkali resistant etching mask is prepared in slot-type device or chain equipment.
Preferably, the alkaline etching technique of the SE solar battery, further includes following steps:
6) alkali resistant etching mask and front side of silicon wafer PSG are removed；
7) cleaning, drying.
Preferably, in step 3), alkali resistant etching mask are as follows: the macromolecule prepared using physical film deposition method in front side of silicon wafer is multiple
Close film；
In step 6): removing polymer compound film using containing the solution of potassium hydroxide and hydrogen peroxide, or use and contain hydroxide
The solution of sodium and hydrogen peroxide removes polymer compound film, or removes polymer compound film using containing the solution of hydrochloric acid and ozone；
Front side of silicon wafer PSG is removed using hydrofluoric acid solution, or removes front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
Preferably, in step 3), alkali resistant etching mask are as follows: aoxidized using liquid phase deposition in metal prepared by front side of silicon wafer
Object film；
In step 6): removing metal oxide film using containing the solution of hydrochloric acid and hydrogen peroxide, or use and contain hydrochloric acid and ozone
Solution remove metal oxide film；Front side of silicon wafer PSG removed using hydrofluoric acid solution, or using containing hydrochloric acid and hydrofluoric acid
Solution removes front side of silicon wafer PSG；
Alternatively,
In step 6): removing metal oxide film and front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
Preferably, in step 3), alkali resistant etching mask are as follows: the nonmetallic oxygen prepared using liquid phase deposition in front side of silicon wafer
Compound film；
In step 6): using hydrofluoric acid solution removal nonmetal oxide film and front side of silicon wafer PSG；
Alternatively,
In step 6): removing nonmetal oxide film and front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
Preferably, the polymer compound film is that calcium chloride and beta-cyclodextrin composite membrane, calcium chloride and macrogol are multiple
Close film or calcium chloride and polyoxyethylene ether composite membrane.
Preferably, the metal oxide film is titanium dioxide film, di-aluminium trioxide film or tin oxide film.
Preferably, the nonmetal oxide film is silicon dioxide film.
Advantages and advantages of the present invention are to provide a kind of alkaline etching technique of SE solar battery, radium-shine
After doping, before removal silicon chip back side PSG, one layer of alkali resistant etching mask is prepared in front side of silicon wafer, which can
Laser slotting region is protected during alkaline etching, avoids laser slotting region by alkaline etching corrosion.
One layer of alkali resistant etching mask, physical film deposition can be prepared in front side of silicon wafer by physical film deposition method or liquid phase deposition
The alkali resistant etching mask of method preparation is polymer compound film, and the alkali resistant etching mask of liquid phase deposition preparation is metal oxide film
Or nonmetal oxide film, these alkali resistant etching masks can all protect laser slotting region during alkaline etching, avoid laser
Slot area is by alkaline etching corrosion.
Although also layer of oxide layer can be generated in front side of silicon wafer during diffusion, which can be in radium-shine doping
In the process by laser damage, and then effective protection laser slotting region is unable to not by alkaline etching corrosion.
Although can specially thicken oxide layer (as thickeied oxide layer using two step diffusion methods) during diffusion, with
The oxide layer in laser slotting region is avoided to break meeting, but the oxide layer in laser slotting region completely by laser during radium-shine doping
Thickness will affect radium-shine process window, therefore the technique requirement of radium-shine doping, and laser slotting region can be improved by thickening oxide layer
If the oxide layer uneven thickness of thickening, it is irregular to will lead to doping efficiency everywhere, doping effect；And laser slotting region
If the oxide layer uneven thickness of thickening, it cannot be guaranteed that after radium-shine doping, laser slotting region remaining oxidated layer thickness everywhere
It is attained by the requirement of alkali resistant corrosion, will lead to finished product yield decline.The present invention is after radium-shine doping again in front side of silicon wafer system
Standby one layer of alkali resistant etching mask, the alkali resistant etching mask at all will not influence the progress of radium-shine doping, thus can avoid it is above-mentioned these
Problem.
In addition, thickening oxide layer using two step diffusion methods, high temperature when second step is spread can deepen first step diffusion institute
The depth of PN junction is obtained, i.e., entirely positive PN junction depth is spread deeply silicon wafer than a step after second step diffusion, and SE proposes the essence of effect
It is that laser slotting region phosphorus doping is more, PN junction is relatively deep shallower to improve contact resistance and non-laser slot area PN junction
To enhance short wavelength's effect, therefore, entirely positive PN junction depth is spread deeply silicon wafer than a step after second step diffusion, will lead to non-
Laser slotting region shortwave effect is deteriorated；And oxide layer is thickeied using two step diffusion methods, the production capacity that will cause diffusion machine becomes
Low 10~15%.The present invention does not need specially to thicken oxide layer during diffusion, can avoid above-mentioned these problems.
Specific embodiment
With reference to embodiment, the specific embodiment of the present invention is further described.Following embodiment is only used for more
Add and clearly demonstrate technical solution of the present invention, and not intended to limit the protection scope of the present invention.
Embodiment 1
A kind of alkaline etching technique of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) polymer compound film for using physical film deposition method to prepare a layer thickness in front side of silicon wafer as 2~20nm；Macromolecule is compound
Film is that calcium chloride and beta-cyclodextrin composite membrane, calcium chloride and macrogol composite membrane or calcium chloride and polyoxyethylene ether are compound
Film；
4) silicon chip back side PSG is removed；
5) alkaline etching.
In step 3), polymer compound film can be prepared in slot-type device or chain equipment.
It is multiple that embodiment 1 prepares one layer of macromolecule after radium-shine doping, before removal silicon chip back side PSG, in front side of silicon wafer
Film is closed, which can protect laser slotting region during alkaline etching, avoid laser slotting region by alkaline etching
Corrosion.
Embodiment 2
On the basis of embodiment 1, difference is:
Further include following steps after the step 5) of embodiment 1:
6) polymer compound film and front side of silicon wafer PSG are removed:
Polymer compound film is removed using the solution containing potassium hydroxide and hydrogen peroxide, or uses and contains sodium hydroxide and hydrogen peroxide
Solution remove polymer compound film, or using contain the solution of hydrochloric acid and ozone remove polymer compound film；
Front side of silicon wafer PSG is removed using hydrofluoric acid solution, or removes front side of silicon wafer using containing the solution of hydrochloric acid and hydrofluoric acid
PSG；
7) cleaning, drying.
Embodiment 2 further removes polymer compound film and front side of silicon wafer PSG and cleaning, drying, so that silicon wafer progress is subsequent
Processing.
Embodiment 3
A kind of alkaline etching technique of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) metal oxide film for using liquid phase deposition to prepare a layer thickness in front side of silicon wafer as 2~20nm；Metal oxide
Film is titanium dioxide film, di-aluminium trioxide film or tin oxide film；
4) silicon chip back side PSG is removed；
5) alkaline etching.
In step 3), metal oxide film can be prepared in slot-type device or chain equipment.
Embodiment 3 prepares one layer of metal oxidation after radium-shine doping, before removal silicon chip back side PSG, in front side of silicon wafer
Object film, the metal oxide film can protect laser slotting region during alkaline etching, avoid laser slotting region by alkaline etching
Corrosion.
Embodiment 4
On the basis of embodiment 3, difference is:
Further include following steps after the step 5) of embodiment 3:
6) metal oxide film and front side of silicon wafer PSG are removed:
Metal oxide film is removed using the solution containing hydrochloric acid and hydrogen peroxide, or is removed using containing the solution of hydrochloric acid and ozone
Metal oxide film；
Front side of silicon wafer PSG is removed using hydrofluoric acid solution, or removes front side of silicon wafer using containing the solution of hydrochloric acid and hydrofluoric acid
PSG；
7) cleaning, drying.
Embodiment 5
On the basis of embodiment 3, difference is:
Further include following steps after the step 5) of embodiment 3:
6) metal oxide film and front side of silicon wafer PSG are removed:
Using solution removal metal oxide film and front side of silicon wafer PSG containing hydrochloric acid and hydrofluoric acid；
7) cleaning, drying.
Embodiment 4 and embodiment 5 further remove metal oxide film and front side of silicon wafer PSG and cleaning, drying, so as to silicon
Piece carries out subsequent processing.
Embodiment 6
A kind of alkaline etching technique of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) the nonmetal oxide film for using liquid phase deposition to prepare a layer thickness in front side of silicon wafer as 2~20nm；Nonmetallic oxygen
Compound film is silicon dioxide film；
4) silicon chip back side PSG is removed；
5) alkaline etching.
In step 3), nonmetal oxide film can be prepared in slot-type device or chain equipment.
Embodiment 6 prepares one layer of nonmetallic oxygen after radium-shine doping, before removal silicon chip back side PSG, in front side of silicon wafer
Compound film, the nonmetal oxide film can protect laser slotting region during alkaline etching, avoid laser slotting region by alkali
Etch corrosion.
Embodiment 7
On the basis of embodiment 6, difference is:
Further include following steps after the step 5) of embodiment 6:
6) nonmetal oxide film and front side of silicon wafer PSG are removed:
Nonmetal oxide film and front side of silicon wafer PSG are removed using hydrofluoric acid solution；
7) cleaning, drying.
Embodiment 8
On the basis of embodiment 6, difference is:
Further include following steps after the step 5) of embodiment 6:
6) nonmetal oxide film and front side of silicon wafer PSG are removed:
Using solution removal nonmetal oxide film and front side of silicon wafer PSG containing hydrochloric acid and hydrofluoric acid；
7) cleaning, drying.
Embodiment 7 and embodiment 8 further remove nonmetal oxide film and front side of silicon wafer PSG and cleaning, drying, so as to
Silicon wafer carries out subsequent processing.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (11)
1. a kind of alkaline etching technique of SE solar battery, which comprises the steps of:
1) it spreads；
2) radium-shine doping；
3) it prepares alkali resistant etching mask: preparing one layer of alkali resistant etching mask in front side of silicon wafer；
4) silicon chip back side PSG is removed；
5) alkaline etching.
2. the alkaline etching technique of SE solar battery according to claim 1, which is characterized in that in step 3), alkali resistant is rotten
Lose exposure mask are as follows: polymer compound film prepare using physical film deposition method in front side of silicon wafer, or use liquid phase deposition silicon wafer just
The standby metal oxide film of wheat flour, or the nonmetal oxide film prepared using liquid phase deposition in front side of silicon wafer.
3. the alkaline etching technique of SE solar battery according to claim 1, which is characterized in that in step 3), alkali resistant is rotten
Lose exposure mask with a thickness of 2~20nm.
4. the alkaline etching technique of SE solar battery according to claim 1, which is characterized in that in step 3), in slot type
Alkali resistant etching mask is prepared in equipment or chain equipment.
5. the alkaline etching technique of SE solar battery according to claim 1, which is characterized in that further include following steps:
6) alkali resistant etching mask and front side of silicon wafer PSG are removed；
7) cleaning, drying.
6. the alkaline etching technique of SE solar battery according to claim 5, which is characterized in that in step 3), alkali resistant is rotten
Lose exposure mask are as follows: the polymer compound film prepared using physical film deposition method in front side of silicon wafer；
In step 6): removing polymer compound film using containing the solution of potassium hydroxide and hydrogen peroxide, or use and contain hydroxide
The solution of sodium and hydrogen peroxide removes polymer compound film, or removes polymer compound film using containing the solution of hydrochloric acid and ozone；
Front side of silicon wafer PSG is removed using hydrofluoric acid solution, or removes front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
7. the alkaline etching technique of SE solar battery according to claim 5, which is characterized in that in step 3), alkali resistant is rotten
Lose exposure mask are as follows: the metal oxide film prepared using liquid phase deposition in front side of silicon wafer；
In step 6): removing metal oxide film using containing the solution of hydrochloric acid and hydrogen peroxide, or use and contain hydrochloric acid and ozone
Solution remove metal oxide film；Front side of silicon wafer PSG removed using hydrofluoric acid solution, or using containing hydrochloric acid and hydrofluoric acid
Solution removes front side of silicon wafer PSG；
Alternatively,
In step 6): removing metal oxide film and front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
8. the alkaline etching technique of SE solar battery according to claim 5, which is characterized in that in step 3), alkali resistant is rotten
Lose exposure mask are as follows: the nonmetal oxide film prepared using liquid phase deposition in front side of silicon wafer；
In step 6): using hydrofluoric acid solution removal nonmetal oxide film and front side of silicon wafer PSG；
Alternatively,
In step 6): removing nonmetal oxide film and front side of silicon wafer PSG using containing the solution of hydrochloric acid and hydrofluoric acid.
9. the alkaline etching technique of the SE solar battery according to claim 2 or 6, which is characterized in that the macromolecule is multiple
Closing film is that calcium chloride and beta-cyclodextrin composite membrane, calcium chloride and macrogol composite membrane or calcium chloride and polyoxyethylene ether are compound
Film.
10. the alkaline etching technique of the SE solar battery according to claim 2 or 7, which is characterized in that the metal oxidation
Object film is titanium dioxide film, di-aluminium trioxide film or tin oxide film.
11. the alkaline etching technique of the SE solar battery according to claim 2 or 8, which is characterized in that the nonmetallic oxygen
Compound film is silicon dioxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910511867.6A CN110176522A (en) | 2019-06-13 | 2019-06-13 | A kind of alkaline etching technique of SE solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910511867.6A CN110176522A (en) | 2019-06-13 | 2019-06-13 | A kind of alkaline etching technique of SE solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110176522A true CN110176522A (en) | 2019-08-27 |
Family
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114597283A (en) * | 2020-12-07 | 2022-06-07 | 苏州阿特斯阳光电力科技有限公司 | SE battery alkali etching method and SE battery |
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| CN109037112A (en) * | 2018-08-06 | 2018-12-18 | 通威太阳能（安徽）有限公司 | A kind of method that crystal silicon solar SE battery etching uses inorganic base |
| CN208690277U (en) * | 2018-07-12 | 2019-04-02 | 浙江爱旭太阳能科技有限公司 | A kind of p-type SE-PERC double-sided solar battery |
| CN110010721A (en) * | 2019-03-22 | 2019-07-12 | 通威太阳能（合肥）有限公司 | SE-based alkali polishing high-efficiency PERC battery process |
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| CN102637768A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Method for preparing EWT (Emitter Wrap Through) crystalline silicon solar cell |
| CN103594530A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof |
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| CN114597283A (en) * | 2020-12-07 | 2022-06-07 | 苏州阿特斯阳光电力科技有限公司 | SE battery alkali etching method and SE battery |
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