CN110176521A - The alkaline etching method of SE solar battery - Google Patents
The alkaline etching method of SE solar battery Download PDFInfo
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- CN110176521A CN110176521A CN201910511866.1A CN201910511866A CN110176521A CN 110176521 A CN110176521 A CN 110176521A CN 201910511866 A CN201910511866 A CN 201910511866A CN 110176521 A CN110176521 A CN 110176521A
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- alkaline etching
- solar battery
- silicon wafer
- etching method
- psg
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- 238000005530 etching Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of alkaline etching method of SE solar battery, includes the following steps: 1) to spread；2) radium-shine doping；3) thermal oxide is carried out to silicon wafer in oxidation furnace, front side of silicon wafer is made to generate layer of oxide layer；4) silicon chip back side PSG is removed；5) alkaline etching；6) front side of silicon wafer PSG is removed；7) cleaning, drying.The present invention its after radium-shine doping, before removal silicon chip back side PSG, generate layer of oxide layer in front side of silicon wafer, which can protect laser slotting region during alkaline etching, avoid laser slotting region by alkaline etching corrosion.
Description
Technical field
The present invention relates to the alkaline etching methods of SE solar battery.
Background technique
SE(Selective Emitter selective emitter) in solar battery manufacturing process, in order to metal grid lines
(electrode) and the progress of silicon wafer contact site are heavily doped, need to carry out laser to crystal silicon diffusion sheet according to grid line pattern using radium-shine equipment
It slots heavily doped, but during laser scanning, the PSG in laser slotting region can be destroyed, and in subsequent alkaline etching, be destroyed
PSG is not enough to protect laser slotting region, and laser slotting region can be by alkaline etching corrosion, so that short circuit current, open-circuit voltage
It is low with fill factor.
Summary of the invention
The purpose of the present invention is to provide a kind of alkaline etching methods of SE solar battery, after radium-shine doping, go
Before silicon chip back side PSG, layer of oxide layer is generated in front side of silicon wafer, which can protect laser to open during alkaline etching
Slot region avoids laser slotting region by alkaline etching corrosion.
To achieve the above object, the present invention provides a kind of alkaline etching method of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) thermal oxide is carried out to silicon wafer in oxidation furnace, front side of silicon wafer is made to generate layer of oxide layer；
4) silicon chip back side PSG is removed；
5) alkaline etching.
Preferably, in step 3), the oxide layer with a thickness of 2~30nm.
Preferably, in step 3), the oxidizing gas in the oxidation furnace is oxygen.
Preferably, in step 3), the temperature of the thermal oxide is 300~750 DEG C, and the time is 2~15min.
Preferably, in step 3), the oxidation furnace is chain type oxidation furnace.
Preferably, the alkaline etching method of the SE solar battery, further includes following steps:
6) front side of silicon wafer PSG is removed；
7) cleaning, drying.
Advantages and advantages of the present invention are to provide a kind of alkaline etching method of SE solar battery, radium-shine
After doping, before removal silicon chip back side PSG, layer of oxide layer is generated in front side of silicon wafer, which can be in alkaline etching process
Middle protection laser slotting region, avoids laser slotting region by alkaline etching corrosion.
Although also layer of oxide layer can be generated in front side of silicon wafer during diffusion, which can be in radium-shine doping
In the process by laser damage, and then effective protection laser slotting region is unable to not by alkaline etching corrosion.
Although can specially thicken oxide layer (as thickeied oxide layer using two step diffusion methods) during diffusion, with
The oxide layer in laser slotting region is avoided to break meeting, but the oxide layer in laser slotting region completely by laser during radium-shine doping
Thickness will affect radium-shine process window, therefore the technique requirement of radium-shine doping, and laser slotting region can be improved by thickening oxide layer
If the oxide layer uneven thickness of thickening, it is irregular to will lead to doping efficiency everywhere, doping effect；And laser slotting region
If the oxide layer uneven thickness of thickening, it cannot be guaranteed that after radium-shine doping, laser slotting region remaining oxidated layer thickness everywhere
It is attained by the requirement of alkali resistant corrosion, will lead to finished product yield decline.The present invention is raw in front side of silicon wafer again after radium-shine doping
At layer of oxide layer, which at all will not influence the progress of radium-shine doping, therefore can avoid above-mentioned these problems.
In addition, thickening oxide layer using two step diffusion methods, high temperature when second step is spread can deepen first step diffusion institute
The depth of PN junction is obtained, i.e., entirely positive PN junction depth is spread deeply silicon wafer than a step after second step diffusion, and SE proposes the essence of effect
It is that laser slotting region phosphorus doping is more, PN junction is relatively deep shallower to improve contact resistance and non-laser slot area PN junction
To enhance short wavelength's effect, therefore, entirely positive PN junction depth is spread deeply silicon wafer than a step after second step diffusion, will lead to non-
Laser slotting region shortwave effect is deteriorated；And oxide layer is thickeied using two step diffusion methods, the production capacity that will cause diffusion machine becomes
Low 10~15%.The present invention does not need specially to thicken oxide layer during diffusion, can avoid above-mentioned these problems.
Specific embodiment
With reference to embodiment, the specific embodiment of the present invention is further described.Following embodiment is only used for more
Add and clearly demonstrate technical solution of the present invention, and not intended to limit the protection scope of the present invention.
Embodiment 1
A kind of alkaline etching method of SE solar battery, includes the following steps:
1) it spreads；
2) radium-shine doping；
3) thermal oxide is carried out to silicon wafer in oxidation furnace, front side of silicon wafer is made to generate layer of oxide layer；Oxidizing gas in oxidation furnace
For oxygen；The temperature of thermal oxide is 300~750 DEG C, and the time is 2~15min；Oxide layer with a thickness of 2~30nm；
4) silicon chip back side PSG is removed；
5) alkaline etching.
Oxidation furnace in step 3) can be chain type oxidation furnace.
Embodiment 1 generates layer of oxide layer after radium-shine doping, before removal silicon chip back side PSG, in front side of silicon wafer, should
Oxide layer can protect laser slotting region during alkaline etching, avoid laser slotting region by alkaline etching corrosion.
Embodiment 2
On the basis of embodiment 1, difference is:
Further include following steps after step 5):
6) front side of silicon wafer PSG is removed；
7) cleaning, drying.
Embodiment 2 further removes front side of silicon wafer PSG and cleaning, drying, so that silicon wafer carries out subsequent processing.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, these improvements and modifications
Also it should be regarded as protection scope of the present invention.
Claims (6)
- The alkaline etching method of 1.SE solar battery, which comprises the steps of:1) it spreads；2) radium-shine doping；3) thermal oxide is carried out to silicon wafer in oxidation furnace, front side of silicon wafer is made to generate layer of oxide layer；4) silicon chip back side PSG is removed；5) alkaline etching.
- 2. the alkaline etching method of SE solar battery according to claim 1, which is characterized in that in step 3), the oxygen Change layer with a thickness of 2~30nm.
- 3. the alkaline etching method of SE solar battery according to claim 1, which is characterized in that in step 3), the oxygen Changing the oxidizing gas in furnace is oxygen.
- 4. the alkaline etching method of SE solar battery according to claim 1, which is characterized in that in step 3), the heat The temperature of oxidation is 300~750 DEG C, and the time is 2~15min.
- 5. the alkaline etching method of SE solar battery according to claim 1, which is characterized in that in step 3), the oxygen Change furnace is chain type oxidation furnace.
- 6. the alkaline etching method of SE solar battery according to claim 1, which is characterized in that further include following steps:6) front side of silicon wafer PSG is removed；7) cleaning, drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910511866.1A CN110176521A (en) | 2019-06-13 | 2019-06-13 | The alkaline etching method of SE solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910511866.1A CN110176521A (en) | 2019-06-13 | 2019-06-13 | The alkaline etching method of SE solar battery |
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| Publication Number | Publication Date |
|---|---|
| CN110176521A true CN110176521A (en) | 2019-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910511866.1A Pending CN110176521A (en) | 2019-06-13 | 2019-06-13 | The alkaline etching method of SE solar battery |
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| Country | Link |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993701A (en) * | 2019-12-30 | 2020-04-10 | 晋能光伏技术有限责任公司 | Photovoltaic SE battery and preparation method thereof |
| CN111900230A (en) * | 2020-08-03 | 2020-11-06 | 山西潞安太阳能科技有限责任公司 | Preparation method of chained oxidized alkali polished SE-PERC solar cell |
| CN114597283A (en) * | 2020-12-07 | 2022-06-07 | 苏州阿特斯阳光电力科技有限公司 | SE battery alkali etching method and SE battery |
| CN114695598A (en) * | 2022-03-24 | 2022-07-01 | 横店集团东磁股份有限公司 | Preparation method and application of crystalline silicon solar cell with shallow junction diffusion emitter |
| CN115207160A (en) * | 2022-07-14 | 2022-10-18 | 常州时创能源股份有限公司 | Preparation method of tunneling oxide layer passivation contact structure |
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| CN102637768A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Method for preparing EWT (Emitter Wrap Through) crystalline silicon solar cell |
| CN103594530A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof |
| CN109216498A (en) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | A kind of preparation method of two-sided tunnel oxide passivation high-efficiency N-type double-side cell |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
| CN208690277U (en) * | 2018-07-12 | 2019-04-02 | 浙江爱旭太阳能科技有限公司 | A kind of p-type SE-PERC double-sided solar battery |
| CN110010721A (en) * | 2019-03-22 | 2019-07-12 | 通威太阳能（合肥）有限公司 | SE-based alkali polishing high-efficiency PERC battery process |
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- 2019-06-13 CN CN201910511866.1A patent/CN110176521A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102637768A (en) * | 2011-02-15 | 2012-08-15 | 中山大学 | Method for preparing EWT (Emitter Wrap Through) crystalline silicon solar cell |
| CN103594530A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof |
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| CN110010721A (en) * | 2019-03-22 | 2019-07-12 | 通威太阳能（合肥）有限公司 | SE-based alkali polishing high-efficiency PERC battery process |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993701A (en) * | 2019-12-30 | 2020-04-10 | 晋能光伏技术有限责任公司 | Photovoltaic SE battery and preparation method thereof |
| CN111900230A (en) * | 2020-08-03 | 2020-11-06 | 山西潞安太阳能科技有限责任公司 | Preparation method of chained oxidized alkali polished SE-PERC solar cell |
| CN114597283A (en) * | 2020-12-07 | 2022-06-07 | 苏州阿特斯阳光电力科技有限公司 | SE battery alkali etching method and SE battery |
| CN114695598A (en) * | 2022-03-24 | 2022-07-01 | 横店集团东磁股份有限公司 | Preparation method and application of crystalline silicon solar cell with shallow junction diffusion emitter |
| CN114695598B (en) * | 2022-03-24 | 2023-07-25 | 横店集团东磁股份有限公司 | Preparation method and application of crystalline silicon solar cell with shallow junction diffusion emitter |
| CN115207160A (en) * | 2022-07-14 | 2022-10-18 | 常州时创能源股份有限公司 | Preparation method of tunneling oxide layer passivation contact structure |
| CN115207160B (en) * | 2022-07-14 | 2024-04-26 | 常州时创能源股份有限公司 | Preparation method of tunneling oxide passivation contact structure |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Applicant after: Changzhou Shichuang Energy Co., Ltd Address before: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Applicant before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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Application publication date: 20190827 |
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