CN112756808A - Cutting method for reducing recombination loss of crystalline silicon solar cell - Google Patents
Cutting method for reducing recombination loss of crystalline silicon solar cell Download PDFInfo
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- CN112756808A CN112756808A CN202011638020.3A CN202011638020A CN112756808A CN 112756808 A CN112756808 A CN 112756808A CN 202011638020 A CN202011638020 A CN 202011638020A CN 112756808 A CN112756808 A CN 112756808A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 108
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000005215 recombination Methods 0.000 title claims abstract description 25
- 230000006798 recombination Effects 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 239000010703 silicon Substances 0.000 claims abstract description 75
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000011265 semifinished product Substances 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 13
- 230000006872 improvement Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000003698 laser cutting Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 238000007146 photocatalysis Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a cutting method for reducing recombination loss of a crystalline silicon solar cell, which comprises the following steps: forming a doping layer on a silicon wafer, and then cutting by adopting first laser to form a first cutting groove; forming a passivation layer and an electrode to obtain a semi-finished product of the crystalline silicon solar cell; and cutting through along the first cutting groove by using a second laser. Wherein the passivation layer is covered in the first cutting groove, and the depth of the first cutting groove is as follows: the thickness of the silicon wafer is 1 (5-100). By implementing the method, the recombination loss in the cutting process can be effectively reduced, and the conversion efficiency of the solar cell slices is improved.
Description
Technical Field
The invention relates to the technical field of solar cell processing, in particular to a cutting method for reducing the composite loss of crystalline silicon.
Background
In the development process of the solar cell industry, the size of the cell is increased, and the conversion efficiency and power of the module can be increased to a certain extent. Therefore, manufacturers typically cut the cells into small pieces before assembling them into a stack. In cutting, laser cutting is generally used. However, during laser cutting, the crystalline silicon at the edge of the crystalline silicon melts and recrystallizes, but the process is completed in a moment, the recrystallization is transformed into irregular amorphous silicon substances, and at the moment, a large amount of dislocations, defects, dangling bonds and recombination centers are generated at the edge of the cell, which seriously affect the efficiency of the cell.
In order to solve the problems, in the prior art, a strong oxidant is generally adopted to oxidize the slice edge, for example, in patent CN111509090A, ozone/hydrogen peroxide is adopted to form a silicon oxide passivation film on the slice edge under the action of photocatalysis by light; patent CN111261749A adopts ozone/concentrated nitric acid/ultraviolet light treatment, and then SiO is formed after annealing2And a passivation layer. The disadvantages of this method are: 1, too high laser power forms too many composite centers; 2, an oxidation process is required to be added after cutting. Another common method is fractional cutting, as proposed in CN111730217A, the solar cell is pre-cut to form a first groove, and then cut along the first groove by a second laser, and then the solar cell is cracked by local cooling. This is achieved byThe process can effectively reduce the heat affected zone of the laser and reduce the hidden crack; but the cutting process is complicated and has a poor effect on eliminating recombination loss.
Disclosure of Invention
The invention aims to provide a cutting method for reducing recombination loss of a crystalline silicon solar cell, which can effectively reduce the recombination loss caused by cutting the solar cell.
In order to solve the technical problem, the invention provides a cutting method for reducing recombination loss of a crystalline silicon solar cell, which comprises the following steps:
(1) providing a silicon wafer, and forming a doping layer on the surface of the silicon wafer;
(2) cutting the preset position of the silicon wafer obtained in the step (1) by adopting a first laser to form a first cutting groove;
(3) forming a passivation layer and an electrode on the silicon wafer obtained in the step (2) to obtain a semi-finished product of the crystalline silicon solar cell;
(4) cutting the semi-finished product of the crystalline silicon solar cell through the first cutting groove by adopting second laser;
wherein a depth of the first cutting groove: the thickness of the silicon wafer is 1 (5-100).
As an improvement of the technical scheme, the depth of the first cutting groove is 4-15 mu m, and the width of the first cutting groove is 30-150 mu m.
As an improvement of the technical scheme, in the step (2), after cutting is completed, annealing is carried out on the obtained silicon wafer, the annealing temperature is 700-850 ℃, and the annealing time is 0.5-1.5 h.
As an improvement of the technical scheme, the power of the first laser is 5-30W, and the wavelength is 532nm or 1064 nm;
the power of the second laser is 5-30W, and the wavelength is 532nm or 1064 nm.
As an improvement of the technical scheme, in the step (4), when the second laser is adopted to cut the semi-finished crystal silicon product, ozone is introduced, and the concentration of the ozone is 20-50 mg/m3。
As an improvement of the above technical solution, the first cutting groove is provided at the center of the two adjacent electrodes.
As an improvement of the technical scheme, the step (2) comprises the following steps:
(2.1) heavily doping on the doped layer by adopting third laser to form a heavily doped region;
(2.2) cutting the preset position of the silicon wafer obtained in the step (2.1) by adopting a first laser to form a first cutting groove;
and (2.3) cleaning and annealing the silicon wafer obtained in the step (2.2).
As an improvement of the technical scheme, the step (3) comprises the following steps:
(3.1) forming an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer on the back surface of the silicon wafer obtained in the step (2.3);
(3.2) forming a silicon oxide layer and a silicon nitride layer on the front surface of the silicon wafer obtained in the step (3.1);
(3.3) printing a front electrode and a back electrode on the silicon wafer obtained in the step (3.2);
and (3.4) sintering the silicon wafer obtained in the step (3.3) to obtain a semi-finished product of the crystalline silicon solar cell.
As an improvement of the above technical solution, in the step (2.1), after the heavily doped region is formed, a laser MARK spot is formed by using a third laser.
As an improvement of the technical scheme, the semi-finished product of the crystalline silicon solar cell is an SE cell, a PERC cell, an SE-PERC cell, an IBC cell, a Topcon cell or a Polo cell.
The implementation of the invention has the following beneficial effects:
1. according to the method for cutting the crystalline silicon solar cell, the cutting is completed in two times, the first cutting is performed before the crystalline silicon solar cell is prepared, and then a passivation layer is formed in the first cutting groove along with the solar cell preparation process, so that the passivation effect is achieved, and the edge recombination is effectively reduced. Meanwhile, the power of the laser used for the second cutting is reduced, and the problems of compound loss, splintering and the like caused by the second cutting are reduced.
2. According to the invention, by controlling the depth and the width of the first cutting groove and the annealing process, the problem of non-uniformity of the silicon wafer caused by the first laser cutting is reduced, and the conversion power of the solar cell slice is improved.
Drawings
FIG. 1 is a flow chart of a cutting method for reducing recombination loss of a crystalline silicon solar cell according to the invention;
fig. 2 is a schematic structural diagram of a crystalline silicon solar cell semi-finished product after step S33 according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, the invention provides a cutting method for reducing recombination loss of a crystalline silicon solar cell, which comprises the following steps:
s1: providing a silicon wafer, and forming a doping layer on the silicon wafer;
specifically, the type of the silicon wafer and the type of the doped layer can be determined according to the specific battery type; if the solar cell is an SE-PERC cell, a P-type silicon wafer is selected, and N is formed on the silicon wafer+A type doping layer; if the solar cell is a Polo cell, an N-type silicon wafer is selected and P is formed on the silicon wafer+And (4) doping the layer.
Furthermore, before the doped layer is formed, the surface of the silicon wafer is subjected to texturing so as to improve the utilization efficiency of solar light.
S2: cutting the preset position of the silicon wafer obtained in the step S1 by using first laser to form a first cutting groove;
the depth of the first cutting groove is 1-20% of the thickness of the silicon wafer, and when the depth of the first cutting groove is larger than 50% of the thickness of the silicon wafer, the diffusion depth of a doping element brought in during cutting of the first laser is too large, so that PN junction breakdown is easily caused, leakage current is improved, and even a battery fails. When the depth of the first cutting groove is less than 1%, the power of the second laser is difficult to be effectively reduced, and the recombination loss generated by cutting is reduced. Preferably, the depth of the first cutting groove is 2-10% of the thickness of the silicon wafer, and is exemplarily 2%, 4%, 5%, 6%, 18%, but is not limited thereto.
Specifically, in an embodiment of the present invention, the depth of the first cutting groove is 4 to 15 μm, and exemplary depths are 4 μm, 5 μm, 8 μm, 11 μm, and 14 μm, but is not limited thereto. The width of the first cutting groove is 30 to 150 μm, preferably 50 to 120 μm, and exemplary ones are 36 μm, 50 μm, 55 μm, 65 μm, 80 μm, 105 μm, 112 μm, but not limited thereto.
The power of the first laser is 5-30W, and exemplary is 5W, 8W, 12W, 20W, 25W, 28W, but not limited thereto. Preferably, the power of the first laser is 10-25W, and the wavelength of the first laser is 532nm or 1064 nm.
The preset position is positioned between the adjacent electrode positions to be formed; preferably, it is located centrally adjacent to the location where the electrodes are to be formed. Specifically, the first cutting groove may be formed on the front surface of the silicon wafer, or may be formed on the back surface of the silicon wafer, and those skilled in the art may select the first cutting groove according to a specific battery type. When the battery type is a PERC battery, the first cutting groove is arranged between the adjacent electrode positions to be formed on the front surface of the silicon wafer; when the battery type is a Topcon battery, the first cutting groove is arranged between the positions of the adjacent electrodes to be formed on the front surface of the silicon wafer; when the battery type is an IBC battery, the first cutting groove is arranged between the adjacent electrode positions to be formed on the back surface of the silicon wafer.
Preferably, in the invention, after the first cutting groove is formed, annealing is performed on the silicon wafer, specifically, the annealing temperature is 700-850 ℃, and the annealing time is 0.5-1.5 h. Preferably, the annealing temperature is 800 to 750 ℃, and exemplary temperatures are 820 ℃, 830 ℃, 840 ℃, 850 ℃, but not limited thereto. Preferably, the annealing time is 1-1.5 h, and exemplary times are 1h, 1.2h, 1.4h and 1.5h, but not limited thereto. It should be noted that when the first laser is used to cut the silicon wafer with the doped layer, part of the doped elements will inevitably be pushed into the silicon wafer, which will reduce the sheet resistance uniformity of the silicon wafer and affect the minority carrier lifetime of the silicon wafer. Therefore, the annealing process is added, so that the sheet resistance uniformity of the silicon wafer can be effectively improved, the minority carrier lifetime of the silicon wafer is prolonged, and the conversion efficiency of the solar cell slice is improved.
Preferably, in one embodiment of the invention, the battery type is a SE-PERC battery. In this embodiment, S2 includes:
s21: heavily doping the doped layer by adopting third laser to form a heavily doped region;
specifically, the power of the third laser is 5-15W, and the wavelength is 532 nm. And heavily doping the position of the front main gate electrode to be formed by adopting third laser to form a plurality of heavily doped regions.
Further, after the heavily doped region is formed, 2-4 laser MARK points are formed on the silicon wafer by adopting a third laser. The laser MARK point can be used for positioning the screen printer during the later electrode printing and also for positioning the laser cutting machine during the second cutting.
S22: cutting the preset position of the silicon wafer obtained in the step S21 by using first laser to form a first cutting groove;
specifically, the depth of the first cutting groove is 4-15 μm, and the width is 50-120 μm. The power of the first laser is 5-30W, and the wavelength is 1064nm/532 nm.
The first cutting groove is disposed between adjacent heavily doped regions and does not intersect the heavily doped regions. Preferably, the first cutting groove is disposed at the center of the adjacent heavily doped region (i.e., at the center of the adjacent main gate electrode).
S23: cleaning and annealing the silicon wafer obtained in the step S22;
specifically, the silicon wafer obtained in the step S22 is subjected to edge etching to remove edge junctions; then cleaning is carried out to remove the PSG on the surface, and then annealing is carried out.
Wherein the annealing temperature is 700-850 ℃, and the annealing time is 0.5-1.5 h. Preferably, the annealing temperature is 800-850 ℃, and the annealing time is 1-1.5 h. Further, during annealing, nitrogen and oxygen are introduced into the annealing furnace.
S3: forming a passivation layer and an electrode on the silicon wafer obtained in the step S2 to obtain a semi-finished product of the crystalline silicon solar cell;
specifically, after the passivation layer is formed, the surface of the first cutting groove is covered by the passivation layer, so that a good passivation effect is achieved on the first cutting groove, and the composite loss caused by cutting is reduced. Meanwhile, the process disclosed by the invention integrates the traditional solar cell manufacturing process and the cutting process, so that the production efficiency is improved.
Specifically, the type of passivation layer can be selected according to the specific battery type, for example, when the battery is a PERC battery, the front passivation layer can be SiOxLayer, SiNxA layer and/or a silicon oxynitride layer, the back passivation layer is AlOxLayer, SiOxLayer SiNxA layer and/or a silicon oxynitride layer. When the cell is a POLO cell, the front passivation layer is AlOxLayer and/or SiNxLayer and back passivation layer of SiO2Tunneling through the passivation layer.
Specifically, after a passivation layer and an electrode are formed, a silicon wafer is sintered to obtain a semi-finished product of the crystalline silicon solar cell.
Preferably, in one embodiment of the invention, the battery type is a SE-PERC battery. In this embodiment, S3 includes:
s31: forming an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer on the back of the silicon wafer obtained in the step S23 in sequence;
s32: forming a silicon oxide layer and a silicon nitride layer on the front surface of the silicon wafer obtained in step S31;
s33: printing a front electrode and a back electrode on the silicon wafer obtained in the step S32;
s34: sintering the silicon wafer obtained in the step S33 to obtain a semi-finished product of the crystalline silicon solar cell;
referring to fig. 2, the semi-finished product of the crystalline silicon solar cell in the invention sequentially comprises a silicon wafer 1, a doping layer 2, a silicon oxide layer 3, a silicon oxynitride layer 5 and a front electrode 6 which are sequentially arranged on the front surface of the silicon wafer, and an aluminum oxide layer 4, a silicon oxide layer 3, a silicon nitride layer 5 and a back electrode 7 which are sequentially arranged on the back surface of the silicon wafer 1; wherein, a first cutting groove 8 is arranged between the adjacent front electrodes 6, and the surface of the first cutting groove 8 is covered with the silicon oxide layer 3 and the silicon nitride layer 5.
S4: cutting through the semi-finished product of the crystalline silicon solar cell along the first cutting groove by adopting second laser;
specifically, the power of the second laser is 5-30W, and exemplary power is 10W, 12W, 20W, 25W and 28W. Preferably, the power of the second laser is 20-30W, and the wavelength of the second laser is 1064nm/532 nm.
Preferably, in the cutting process, ozone is introduced, and the concentration of the ozone is kept to be 20-50 mg/m3Recombination losses can be further reduced. Specifically, the ozone concentration may be 25mg/m3、30mg/m3、35mg/m3、40mg/m3、45mg/m3But is not limited thereto.
The crystal silicon solar cell cutting method based on the invention can be applied to cutting of various types of solar cells; such as a conventional SE cell, PERC cell, SE-PERC cell, IBC cell, Topcon cell or Polo cell, but not limited thereto.
The invention is illustrated below in specific examples:
example 1
The embodiment provides a cutting method for reducing recombination loss of a crystalline silicon solar cell, which comprises the following steps:
(1) providing a silicon wafer, and forming a doping layer on the surface of the silicon wafer;
specifically, the silicon wafer is P-type monocrystalline silicon with a thickness of 220 μm and a surface doping layer of N+A layer; after the step, the sheet resistance of the silicon chip is 95-110 omega/sq;
(2) forming a heavily doped region on the doped layer by adopting laser with power of 8W and wavelength of 532nm, and manufacturing four laser MARK points;
(3) cutting the center of the adjacent heavily doped regions by adopting first laser to form a first cutting groove;
specifically, the power of the first laser is 10W, and the wavelength is 532 nm;
the width of the first cutting groove is 100 μm, and the depth is 12 μm;
(4) etching to remove edge junction, cleaning to remove PSG, and annealing;
specifically, the annealing temperature is 820 ℃, and the annealing time is 1.2 h;
(5) sequentially forming an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer on the back of the silicon wafer, and then sequentially forming the silicon oxide layer and the silicon nitride layer on the front of the silicon wafer; printing a front electrode and a back electrode; firing to obtain a semi-finished product of the crystalline silicon solar cell;
(6) cutting through the semi-finished product of the crystalline silicon solar cell along the first cutting groove by adopting second laser to obtain a finished product of a solar cell slice;
specifically, the power of the second laser light is 20W, and the wavelength is 532 nm.
The inlet concentration is 25mg/m in the cutting process3The ozone of (2).
Comparative example 1
The present comparative example provides a method for cutting a crystalline silicon solar cell, which is different from example 1 in that only one cutting is performed on a semi-finished crystalline silicon solar cell prepared; wherein the power of the laser is 48W, and the wavelength is 523 nm; when cutting, the concentration is 25mg/m3The ozone of (2).
Comparative example 2
The present comparative example provides a method for cutting a crystalline silicon solar cell, which is different from example 1 in that cutting is performed only twice on a prepared crystalline silicon solar cell semi-finished product; here, the conditions used for the two-time cutting were the same as those in example 1.
Comparative example 3
This comparative example provides a method for cutting a crystalline silicon solar cell, which is different from example 1 in that the annealing temperature is 750 ℃ and the time is 1 h.
Comparative example 4
This comparative example provides a method for cutting a crystalline silicon solar cell, which is different from example 1 in that the annealing temperature is 680 c and the time is 1 h.
The efficiency of the solar cell slices of example 1 and comparative examples 1 to 4 was measured, and the results were as follows:
| example 1 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | |
| Conversion efficiency | 22.64％ | 22.34％ | 22.27％ | 22.32％ | 22.19％ |
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A cutting method for reducing recombination loss of a crystalline silicon solar cell is characterized by comprising the following steps:
(1) providing a silicon wafer, and forming a doping layer on the surface of the silicon wafer;
(2) cutting the preset position of the silicon wafer obtained in the step (1) by adopting a first laser to form a first cutting groove;
(3) forming a passivation layer and an electrode on the silicon wafer obtained in the step (2) to obtain a semi-finished product of the crystalline silicon solar cell;
(4) cutting the semi-finished product of the crystalline silicon solar cell through the first cutting groove by adopting second laser;
wherein a depth of the first cutting groove: the thickness of the silicon wafer is 1 (5-100).
2. The cutting method for reducing recombination loss of the crystalline silicon solar cell as claimed in claim 1, wherein the depth of the first cutting groove is 4-15 μm, and the width of the first cutting groove is 30-150 μm.
3. The cutting method for reducing recombination loss of the crystalline silicon solar cell as claimed in claim 1, wherein in the step (2), after the cutting is finished, the obtained silicon wafer is annealed, wherein the annealing temperature is 700-850 ℃, and the annealing time is 0.5-1.5 h.
4. The cutting method for reducing recombination loss of the crystalline silicon solar cell according to claim 1, wherein the power of the first laser is 5-30W, and the wavelength is 532nm or 1064 nm;
the power of the second laser is 5-30W, and the wavelength is 532nm or 1064 nm.
5. The cutting method for reducing recombination loss of the crystalline silicon solar cell as defined in claim 1, wherein in the step (4), when the second laser is used for cutting the crystalline silicon semi-finished product, ozone is introduced, and the concentration of the ozone is 20-50 mg/m3。
6. The cutting method for reducing recombination loss of the crystalline silicon solar cell according to claim 1, wherein the first cutting groove is arranged in the center of the two adjacent electrodes.
7. The cutting method for reducing recombination loss of the crystalline silicon solar cell according to claim 1, wherein the step (2) comprises:
(2.1) heavily doping on the doped layer by adopting third laser to form a heavily doped region;
(2.2) cutting the preset position of the silicon wafer obtained in the step (2.1) by adopting a first laser to form a first cutting groove;
and (2.3) cleaning and annealing the silicon wafer obtained in the step (2.2).
8. The cutting method for reducing recombination loss of the crystalline silicon solar cell according to claim 5, wherein the step (3) comprises the following steps:
(3.1) forming an aluminum oxide layer, a silicon oxide layer and a silicon nitride layer on the back surface of the silicon wafer obtained in the step (2.3);
(3.2) forming a silicon oxide layer and a silicon nitride layer on the front surface of the silicon wafer obtained in the step (3.1);
(3.3) printing a front electrode and a back electrode on the silicon wafer obtained in the step (3.2);
and (3.4) sintering the silicon wafer obtained in the step (3.3) to obtain a semi-finished product of the crystalline silicon solar cell.
9. The cutting method for reducing recombination loss of the crystalline silicon solar cell as claimed in claim 7, wherein in the step (2.1), after the heavily doped region is formed, a laser MARK point is formed by using a third laser.
10. The cutting method for reducing recombination loss of the crystalline silicon solar cell of claim 1, wherein the crystalline silicon solar cell semi-finished product is an SE cell, a PERC cell, an SE-PERC cell, an IBC cell, a Topcon cell or a Polo cell.
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