CN115207160A - Preparation method of tunneling oxide layer passivation contact structure - Google Patents
Preparation method of tunneling oxide layer passivation contact structure Download PDFInfo
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- CN115207160A CN115207160A CN202210824940.7A CN202210824940A CN115207160A CN 115207160 A CN115207160 A CN 115207160A CN 202210824940 A CN202210824940 A CN 202210824940A CN 115207160 A CN115207160 A CN 115207160A
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- 230000005641 tunneling Effects 0.000 title claims abstract description 69
- 238000002161 passivation Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- 230000003647 oxidation Effects 0.000 claims abstract description 50
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 238000002425 crystallisation Methods 0.000 claims abstract description 16
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- 229920005591 polysilicon Polymers 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 239000003513 alkali Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Abstract
The invention discloses a preparation method of a tunneling oxide layer passivation contact structure, which comprises the following steps: oxidizing the silicon wafer in a chain type oxidation furnace to form a tunneling oxide layer on the back of the silicon wafer; depositing a polysilicon layer on the tunneling oxide layer by LPCVD; and doping the polycrystalline silicon layer by thermal diffusion and finishing annealing crystallization to form a doped polycrystalline silicon layer. The oxidation treatment process of the tunneling oxide layer can be independently controlled, can be better matched with the subsequent doping crystallization procedure, and the quality and the uniformity of the grown tunneling oxide layer are better.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a preparation method of a tunneling oxide layer passivation contact structure.
Background
The TOPCon (Tunnel Oxide Passivated Contact) cell is a new silicon solar cell proposed by franhoff research institute, germany in 2013. The tunneling oxide layer with the thickness of 1-2 nm is superposed with the doped polycrystalline silicon layer to form a passivation contact structure, so that the contact recombination rate of the surface of the silicon chip and metal is effectively reduced. With the development of TOPCon battery technology, the production line condition is achieved, and the production efficiency reaches 24.5%. LPCVD is currently the most mature and industrially most used technique for the preparation of tunnel oxide and polysilicon layers (Polysi). The tunnel oxide layer and the Polysi are completed in the same furnace tube, which can save the process steps, but also limit the adjustment of the process window, for example, the growth temperature of the tunnel oxide layer cannot exceed 650 ℃. This two-in-one approach is very limited if one wants to increase the compactness of the tunnel oxide layer or match the boron diffusion process.
The preparation method of the traditional tunneling oxide layer passivation contact structure comprises the following steps: back side alkali polish → LPCVD (growth tunnel silicon dioxide + deposition Polysi) → doping and annealing. The method comprises the following steps that low-pressure chemical vapor deposition (LPCVD) is a tubular device, a silicon wafer with polished back is automatically inserted into a quartz boat, then the quartz boat is loaded into a furnace tube of the LPCVD device, vacuumizing is carried out, the target temperature T1 is reached, oxygen is introduced, and a tunneling oxide layer grows; then vacuumizing to reach the target temperature T2, introducing silane, and depositing a polycrystalline silicon layer (Polysi); putting the silicon wafer after LPCVD into a phosphorus diffusion tube or a boron diffusion tube, carrying out phosphorus doping or boron doping, and simultaneously finishing annealing crystallization; finally, contact passivation of n-Polysi/SiO2 or p-Polysi/SiO2 is formed.
The existing preparation method of the tunneling oxide layer passivation contact structure has the following defects:
1) The temperature T1 of the tunneling oxide layer and the temperature T2 of the Polysi are limited in setting, and the temperature difference between the tunneling oxide layer and the Polysi cannot be too large; if the temperature of the furnace tube is too large, the heating time of the furnace tube is too long, and the productivity is seriously influenced.
2) The thermal field characteristic of the furnace tube is that the temperature of the furnace wall is high, and the temperature is lower towards the center of the furnace tube; the thickness of the contact passivation tunneling oxide layer is required to be 1-2 nm, and the requirement on the uniformity of the thickness is very high; but due to the temperature field characteristics of the furnace tube, the tunneling oxide layer of the area of the wafer positioned at the center of the furnace tube is thin, and the tunneling oxide layer of the area close to the wall of the furnace tube is thick; non-uniform tunnel oxide thickness affects contact passivation performance.
3) The gas field design of the tubular equipment is generally that gas is introduced from a furnace mouth and exhausted from a furnace tail, so that the thickness of the silicon wafer tunneling oxide layer at different positions is different; the difference in tunnel oxide thickness between patches also affects contact passivation performance.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a preparation method of a tunneling oxide layer passivation contact structure, wherein the tunneling oxide layer passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer; the preparation method comprises the following steps: oxidizing the silicon wafer in a chain type oxidation furnace to form a tunneling oxide layer on the back of the silicon wafer; then depositing a polysilicon layer on the tunneling oxide layer through LPCVD; and then doping the polysilicon layer by thermal diffusion and finishing annealing crystallization to form a doped polysilicon layer.
Preferably, the back side of the silicon wafer is subjected to alkali polishing before the oxidation treatment.
Preferably, the oxygen atmosphere is maintained in the chain oxidation furnace, and the oxygen is in an excess state.
Preferably, the oxygen is supplied to the chain oxidation furnace through an air inlet pipe, and the air inlet pipe is densely and uniformly distributed.
Preferably, the silicon wafer passes through the chain type oxidation furnace at a constant speed with the back side facing upwards.
Preferably, the chain oxidation furnace heats the silicon wafer by up-and-down radiation.
Preferably, the thickness of the formed tunneling oxide layer is controlled by adjusting the silicon wafer conveying speed and the heating temperature.
Preferably, the density of the tunneling oxide layer is controlled by adjusting the silicon wafer conveying speed and the heating temperature.
Preferably, the polysilicon layer is phosphorus doped or boron doped by thermal diffusion.
Preferably, the preparation method of the tunnel oxide layer passivation contact structure comprises the following steps:
1) Back alkali polishing: performing alkali polishing on the back of the silicon wafer by using NaOH alkali solution;
2) Chain oxidation: passing the silicon wafer through a chain type oxidation furnace with the back face upward at a constant speed; oxygen is supplied to the chain type oxidation furnace through an air inlet pipe, the air inlet pipe is densely and uniformly distributed, the oxygen atmosphere is maintained in the chain type oxidation furnace, and the oxygen is in an excessive state; the chain type oxidation furnace heats the silicon wafer in an up-and-down radiation mode, and a tunneling oxide layer is grown on the back of the silicon wafer; controlling the thickness and density of the formed tunneling oxide layer by adjusting the transmission speed and the heating temperature of the silicon wafer;
3) Depositing a polycrystalline silicon layer by LPCVD: inserting the silicon wafer with the tunneling oxide layer grown into a quartz boat, loading the quartz boat into a furnace tube of an LPCVD (low pressure chemical vapor deposition) device, vacuumizing until the target temperature T2 is reached, introducing silane, and depositing a polycrystalline silicon layer (Polysi) on the tunneling oxide layer;
4) Thermal diffusion: putting the silicon chip deposited with the polysilicon layer into a phosphorus diffusion tube or a boron diffusion tube, carrying out phosphorus doping or boron doping, and simultaneously finishing annealing crystallization to form n-Polysi/SiO 2 Or p-Polysi/SiO 2 The passivation contact structure of (1).
The invention has the advantages and beneficial effects that: the preparation method of the passivation contact structure of the tunneling oxide layer is provided, the oxidation treatment process of the tunneling oxide layer can be independently controlled, the passivation contact structure can be better matched with the subsequent doping crystallization process, and the quality and the uniformity of the grown tunneling oxide layer are better.
The chain type oxidation furnace of the invention grows the tunneling silicon dioxide → LPCVD (depositing Polysi), and carries out the tunneling oxide layer and the Polysi deposition in two steps, which has the following advantages compared with the one-step tunneling oxide layer and Polysi deposition: first, the temperature for growing the tunnel oxide layer may not be limited, and the target temperature may be set according to the requirement of the contact passivation performance, for example, a denser tunnel oxide layer may be grown by using a higher temperature. Secondly, the method can be better matched with a subsequent doping crystallization process, and the window for debugging the doping crystallization process is larger. Especially, the boron doping process requires higher temperature, and boron atoms are easier to diffuse through the tunneling oxide layer, which requires a denser tunneling oxide layer.
The tunneling oxide layer is finished in the chain type oxidation furnace, the temperature T1 of chain type oxidation is not limited, higher temperature can be used, the tunneling oxide layer can be more compact, and the contact passivation effect is better; in the subsequent doping crystallization process, flexible matching can be realized, and the window for process debugging is larger; particularly, the boron doping process has higher diffusion temperature, boron atoms are easier to diffuse and penetrate through the tunneling oxide layer, and a denser tunneling oxide layer is needed.
The characteristics of the chain type oxidation furnace comprise a heating mode and air field uniformity, so that the inter-wafer uniformity and the in-wafer uniformity of the thickness of the grown tunneling oxide layer are better.
The invention uses the chain type oxidation furnace to grow the tunneling silicon dioxide, and has the following advantages compared with a tubular oxidation furnace: firstly, the silicon wafer is directly heated by up-and-down radiation, and the temperature of the silicon wafer is controlled more uniformly and accurately. Secondly, the cavity intake pipe can be densely and uniformly distributed, and oxygen is excessive, so that the atmosphere of the whole furnace chamber is more uniform. The uniformity in the grown tunneling oxide layer and between the tunneling oxide layers is better. And thirdly, the chain type equipment has simple automation of feeding and discharging and large capacity.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a preparation method of a tunneling oxide layer passivation contact structure, which comprises the following steps:
1) Back alkali polishing: performing alkali polishing on the back of the silicon wafer by using NaOH alkali solution;
2) Chain oxidation: the back of the silicon chip is upward and passes through a chain type oxidation furnace at a constant speed; oxygen is supplied to the chain type oxidation furnace through the air inlet pipe, the air inlet pipe is densely and uniformly distributed, the oxygen atmosphere is maintained in the chain type oxidation furnace, and the oxygen is in an excessive state; the chain type oxidation furnace heats the silicon wafer in an up-and-down radiation mode, and a tunneling oxide layer grows on the back of the silicon wafer; controlling the thickness and the density of the formed tunneling oxide layer by adjusting the transmission speed of the silicon wafer and the heating temperature T1;
the chain type oxidation furnace directly heats the silicon wafer in an up-and-down radiation mode, the heating temperature of the silicon wafer is controlled more uniformly and accurately, oxygen in the chain type oxidation furnace is excessive, the technical defect of tubular oxidation can be avoided, and the thickness of a grown tunneling oxide layer is more uniform and controllable; the heating temperature T1 of the chain oxidation is independently controlled, higher temperature can be used, and a more compact tunneling oxide layer can be grown;
3) Depositing a polycrystalline silicon layer by LPCVD: inserting the silicon wafer with the tunneling oxide layer grown into a quartz boat, loading the quartz boat into a furnace tube of an LPCVD (low pressure chemical vapor deposition) device, vacuumizing until the target temperature T2 is reached, introducing silane, and depositing a polycrystalline silicon layer (Polysi) on the tunneling oxide layer;
the temperature T2 for depositing the polysilicon layer by LPCVD is not limited and can be set according to the requirement of optimal deposition of Polysi; the scheme of the invention can solve the problem that the temperatures of the tunneling oxide layer and the Polysi layer which are grown simultaneously by LPCVD are mutually restricted;
4) Thermal diffusion: putting the silicon chip deposited with the polysilicon layer into a phosphorus diffusion tube or a boron diffusion tube, carrying out phosphorus doping or boron doping, and simultaneously finishing annealing crystallization to form n-Polysi/SiO 2 Or p-Polysi/SiO 2 The passivation contact structure of (1).
The specific embodiment of the invention is as follows:
example 1
A preparation method of a tunneling oxide layer passivation contact structure comprises the following steps:
1) Back alkali polishing: performing alkali polishing on the back of the silicon wafer by using NaOH alkali solution;
2) Chain oxidation: the silicon chip passes through a chain type oxidation furnace with the back face upward and the conveying speed of 3 m/min; oxygen is supplied to the chain type oxidation furnace through an air inlet pipe, the air inlet pipe is densely and uniformly distributed, the oxygen atmosphere is maintained in the chain type oxidation furnace, and the oxygen is in an excessive state; the chain type oxidation furnace heats the silicon wafer in an up-and-down radiation mode, the heating temperature is set to be 650 ℃, and a 1-3 nm tunneling oxide layer is uniformly grown on the back of the silicon wafer; the thickness and compactness of the tunneling oxide layer can be controlled through the heating temperature and the conveying speed;
3) Depositing a polycrystalline silicon layer by LPCVD: automatically inserting the silicon wafer with the tunneling oxide layer grown into a quartz boat, then loading the quartz boat into a furnace tube of an LPCVD (low pressure chemical vapor deposition) device, vacuumizing, heating to 610 ℃, introducing silane, and depositing a polycrystalline silicon layer (Polysi); the thickness of Polysi is controlled by the reaction time, and the thickness is generally 100-150 nm;
4) Thermal diffusion: putting the silicon slice deposited with the polysilicon layer into a phosphorus diffusion tube, carrying out phosphorus doping, and simultaneously finishing annealing crystallization, wherein the temperature range of the phosphorus doping crystallization is 800-900 ℃, and forming n-Polysi/SiO 2 The contact structure is passivated.
Example 2
A preparation method of a tunneling oxide layer passivation contact structure comprises the following steps:
1) Back alkali polishing: performing alkali polishing on the back of the silicon wafer by using NaOH alkali solution;
2) Chain oxidation: the silicon chip passes through a chain type oxidation furnace with the back face upward and the conveying speed of 3 m/min; oxygen is supplied to the chain type oxidation furnace through the air inlet pipe, the air inlet pipe is densely and uniformly distributed, the oxygen atmosphere is maintained in the chain type oxidation furnace, and the oxygen is in an excessive state; the chain type oxidation furnace heats the silicon wafer in an up-and-down radiation mode, the heating temperature is set to 700 ℃, and a tunneling oxide layer with the thickness of 1-3 nm uniformly grows on the back of the silicon wafer; the thickness and compactness of the tunneling oxide layer can be controlled through the heating temperature and the conveying speed;
3) Depositing a polycrystalline silicon layer by LPCVD: automatically inserting the silicon wafer with the tunneling oxide layer grown into a quartz boat, then loading the quartz boat into a furnace tube of an LPCVD (low pressure chemical vapor deposition) device, vacuumizing, heating to 610 ℃, introducing silane, and depositing a polycrystalline silicon layer (Polysi); the thickness of Polysi is controlled by the reaction time, and the thickness is generally 100-150 nm;
4) Thermal diffusion: putting the silicon slice deposited with the polysilicon layer into a boron diffusion tube, carrying out boron doping, and simultaneously finishing annealing crystallization, wherein the temperature range of the boron doping crystallization is 850-950 ℃, and forming p-Polysi/SiO 2 The contact structure is passivated.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A preparation method of a tunneling oxide layer passivation contact structure is characterized by comprising the following steps: oxidizing the silicon wafer in a chain type oxidation furnace to form a tunneling oxide layer on the back of the silicon wafer; depositing a polysilicon layer on the tunneling oxide layer by LPCVD; and doping the polycrystalline silicon layer by thermal diffusion and finishing annealing crystallization to form the doped polycrystalline silicon layer.
2. The method of claim 1, wherein the back surface of the silicon wafer is subjected to alkali polishing prior to the oxidation treatment.
3. The method of claim 1, wherein an oxygen atmosphere is maintained in the chain oxidation furnace and the oxygen is in excess.
4. The method for preparing the tunneling oxide layer passivation contact structure according to claim 3, wherein oxygen is supplied to the chain type oxidation furnace through an air inlet pipe, and the air inlet pipe is densely and uniformly distributed.
5. The method according to claim 4, wherein the silicon wafer is passed through a chain oxidation furnace with the back side facing upward at a constant speed.
6. The method of claim 5, wherein the chain oxidation furnace heats the silicon wafer by up and down radiation.
7. The method of claim 6, wherein the thickness of the tunnel oxide layer is controlled by the silicon wafer transport speed and the heating temperature.
8. The method according to claim 6, wherein the compactness of the tunnel oxide layer is controlled by the silicon wafer conveying speed and the heating temperature.
9. The method of claim 1, wherein the polysilicon layer is doped with phosphorus or boron by thermal diffusion.
10. The method of claim 1, comprising the steps of:
1) Back alkali polishing: performing alkali polishing on the back of the silicon wafer by adopting alkali solution;
2) Chain oxidation: the back of the silicon chip is upward and passes through a chain type oxidation furnace at a constant speed; oxygen is supplied to the chain type oxidation furnace through an air inlet pipe, the air inlet pipe is densely and uniformly distributed, the oxygen atmosphere is maintained in the chain type oxidation furnace, and the oxygen is in an excessive state; the chain type oxidation furnace heats the silicon wafer in an up-and-down radiation mode, and a tunneling oxide layer grows on the back of the silicon wafer; controlling the thickness and density of the tunneling oxide layer through the transmission speed and the heating temperature of the silicon wafer;
3) Depositing a polycrystalline silicon layer by LPCVD: inserting the silicon wafer with the tunneling oxide layer grown into a quartz boat, loading the quartz boat into a furnace tube of an LPCVD (low pressure chemical vapor deposition) device, vacuumizing until the target temperature is reached, introducing silane, and depositing a polycrystalline silicon layer on the tunneling oxide layer;
4) Thermal diffusion: putting the silicon chip deposited with the polysilicon layer into a phosphorus diffusion tube or a boron diffusion tube, carrying out phosphorus doping or boron doping, and simultaneously finishing annealing crystallization to form n-Polysi/SiO 2 Or p-Polysi/SiO 2 The passivation contact structure of (1).
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