CN114400260A - Unwinding plating method and preparation method of tunneling oxide layer passivation contact solar cell - Google Patents
Unwinding plating method and preparation method of tunneling oxide layer passivation contact solar cell Download PDFInfo
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Abstract
The invention relates to a method for decoating and a method for preparing a tunneling oxide layer passivation contact solar cell; the decoiling plating method comprises the following steps: providing a coated silicon wafer, wherein the surface of the coated silicon wafer is provided with a winding coating layer generated by winding coating; sequentially carrying out activation treatment and chain type oxidation reaction on the coated silicon wafer, wherein a first oxidation layer covers the front side of the coated silicon wafer, and a second oxidation layer covers the back side of the coated silicon wafer; forming a water film on the back of the coated silicon wafer; cleaning the coated silicon wafer by using a first acidic solution to remove a first oxide layer; and cleaning the coated silicon wafer by sequentially utilizing the first alkaline solution, the second alkaline solution, the third alkaline solution and the second acidic solution to remove the winding coating and the second oxidation layer. The decoating method is matched with a production line of the tunneling oxide layer passivation contact solar cell, the appearance and the performance of a coated silicon wafer after decoating are excellent, and the tunneling oxide layer passivation contact solar cell prepared by the preparation method of the solar cell has excellent photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for decoating and preparing a tunneling oxide layer passivation contact solar cell.
Background
The preparation method of the tunnel oxide layer passivation contact (TOPcon) solar cell comprises the step of growing the tunnel oxide layer and the doped polycrystalline silicon layer on one surface of a silicon wafer so as to form passivation contact, wherein the passivation contact not only provides good interface passivation for the back surface of the tunnel oxide layer passivation contact solar cell, but also improves the efficiency of the tunnel oxide layer passivation contact solar cell. However, during the process of growing the tunnel oxide layer and the doped polysilicon layer, a phenomenon of plating around occurs, and silicon oxide and doped polysilicon are also deposited on the other surface of the silicon wafer.
In order to remove the wraparound plating, the traditional technology is that an acid solution and an alkaline solution are sequentially utilized to clean the coated silicon wafer, and at the moment, the doped polycrystalline silicon layer on the back of the coated silicon wafer is directly contacted with the acid solution and the alkaline solution, so that the complete structure of passivation contact is difficult to ensure, and the efficiency of the tunneling oxide layer passivation contact solar cell is influenced.
Disclosure of Invention
In view of the above, it is necessary to provide a method for performing a despun plating process, which is compatible with a production line of a tunnel oxide layer passivated contact solar cell, and a method for manufacturing a tunnel oxide layer passivated contact solar cell.
The invention provides a method for decoiling, which comprises the following steps:
providing a coated silicon wafer, wherein the coated silicon wafer comprises a silicon wafer, a tunneling oxide layer and a doped polycrystalline silicon layer which are arranged on the back of the silicon wafer in a stacked mode, and a boron diffusion layer which is arranged on the front of the silicon wafer in a stacked mode; the surface of the film-coated silicon wafer is provided with a winding coating layer generated by winding coating;
sequentially carrying out activation treatment and chain type oxidation reaction on the coated silicon wafer, wherein a first oxidation layer covers the front side of the coated silicon wafer, and a second oxidation layer covers the back side of the coated silicon wafer;
forming a water film on the back of the coated silicon wafer;
removing the first oxide layer by using a first acidic solution; and
and cleaning the coated silicon wafer by using a first alkaline solution, a second alkaline solution containing an additive, a third alkaline solution containing an oxidant and a second acidic solution in sequence to remove the winding coating and the second oxidation layer.
In one embodiment, the temperature in the step of activating treatment is 800 ℃ to 860 ℃.
In one embodiment, the temperature in the step of chain oxidation reaction is 500 ℃ to 600 ℃.
In one embodiment, in the step of chain oxidation, the temperature is increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃ and then decreased to 565 ℃ to 585 ℃;
alternatively, the temperature is increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃;
alternatively, the temperature is decreased from 590 ℃ to 600 ℃ to 510 ℃ to 530 ℃.
In one embodiment, the step of the chain oxidation reaction includes passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, the temperature of the first temperature zone is 510 ℃ to 530 ℃, the temperature of the second temperature zone is 580 ℃ to 595 ℃, the temperature of the third temperature zone is 590 ℃ to 595 ℃, and the temperature of the fourth temperature zone is 565 ℃ to 585 ℃.
In one embodiment, the step of the chain oxidation reaction includes passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, the temperature of the first temperature zone is 510 ℃ to 530 ℃, the temperature of the second temperature zone is 530 ℃ to 565 ℃, the temperature of the third temperature zone is 565 ℃ to 595 ℃, and the temperature of the fourth temperature zone is 595 ℃ to 600 ℃.
In one embodiment, the step of the chain oxidation reaction includes passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, the temperature of the first temperature zone is 595-600 ℃, the temperature of the second temperature zone is 565-595 ℃, the temperature of the third temperature zone is 530-565 ℃, and the temperature of the fourth temperature zone is 510-530 ℃.
In one embodiment, the first acidic solution is an HF solution, and the mass fraction of the HF solution is 7% to 9%.
In one embodiment, the first alkaline solution is at least one of a NaOH solution or a KOH solution, and the mass fraction of the first alkaline solution is 17% to 19%;
and/or the second alkaline solution is at least one of NaOH solution or KOH solution, the mass fraction of the second alkaline solution is 7-8%, the additive comprises at least one of a cleaning agent, an oxidizing agent, a dispersing agent, a surfactant, a buffering agent, a defoaming agent, glucose or an accelerating agent, and the mass fraction of the additive in the second alkaline solution is 1-3%;
and/or the third alkaline solution is selected from at least one of NaOH solution or KOH solution, the mass fraction of the third alkaline solution is 15-17%, and the oxidant comprises H2O2The mass fraction of the oxidant in the third alkaline solution is 2-3%;
and/or the second acidic solution is selected from a mixed solution of an HF solution, an HCl solution and water, the mass fraction of the HF solution is 36-38%, the mass fraction of the HCl solution is 48-50%, and the volume ratio of the HF solution to the HCl solution to the water is 15:1:33-16:1: 35.
In one embodiment, the method of de-wraparound plating is suitable for de-wraparound plating of a tunnel oxide layer passivation contact solar cell.
A preparation method of a tunneling oxide layer passivation contact solar cell comprises the uncoiling plating method.
In the unwinding plating method provided by the invention, because the second oxide layer has hydrophilicity, the adhesion force of a water film on the surface of the second oxide layer can be improved, and the water film is utilized to protect the second oxide layer from being corroded by the first acidic solution, so that when the film-coated silicon wafer is cleaned by the second alkaline solution, the winding plating layer on the front surface of the film-coated silicon wafer and the second oxide layer on the back surface of the film-coated silicon wafer are directly contacted with the second alkaline solution, the winding plating layer and the second oxide layer can be removed, the structural integrity of the tunneling oxide layer and the doped polycrystalline silicon layer can be effectively protected, the surface of the film-coated silicon wafer after unwinding plating is neat and bright, the appearance and the performance are excellent, and the tunneling oxide layer passivated contact solar cell prepared by the method for preparing the tunneling oxide layer passivated contact solar cell comprising the unwinding plating method has excellent photoelectric conversion efficiency.
In addition, the method for decoiling is matched with a production line of a tunneling oxide layer passivation contact solar cell, and the required acid and alkaline solution are the same as those used in the production line, so that the method is easy to obtain.
Drawings
FIG. 1 is a schematic diagram of a decoating method provided by the present invention.
In the figure, 10, a boron diffusion layer; 20. a silicon wafer; 30. tunneling through the oxide layer; 40. doping the polysilicon layer; 50. winding the plating layer; 60. a first oxide layer; 70. a second oxide layer; 80. a water film.
Detailed Description
The method for deplating and passivating the contact solar cell by the tunnel oxide layer provided by the invention is further explained below.
As shown in fig. 1, a schematic diagram of a method for deplating according to the present invention specifically includes the following steps:
s1, providing a coated silicon wafer 20, wherein the coated silicon wafer 20 comprises a silicon wafer 20, a tunneling oxide layer 30 and a doped polycrystalline silicon layer 40 which are arranged on the back of the silicon wafer 20 in a stacked mode, and a boron diffusion layer 10 which is arranged on the front of the silicon wafer 20 in a stacked mode; the surface of the coated silicon wafer 20 is provided with a winding coating layer 50 generated by winding coating;
s2, sequentially carrying out activation treatment and chain oxidation reaction on the coated silicon wafer 20, wherein the front surface of the coated silicon wafer 20 is covered with a first oxidation layer 60, and the back surface of the coated silicon wafer is covered with a second oxidation layer 70;
s3, forming a water film 80 on the back surface of the coated silicon wafer 20;
s4, removing the first oxide layer 60 using a first acidic solution; and
and S5, cleaning the coated silicon wafer 20 by using the first alkaline solution, the second alkaline solution containing the additive, the third alkaline solution containing the oxidant and the second acidic solution in sequence, and removing the wraparound coating 50 and the second oxidation layer 70.
In one embodiment, the silicon wafer 20 in step S1 is selected from an N-type silicon wafer 20, the boron diffusion layer 10 is selected from a borosilicate glass layer, the tunneling oxide layer 30 is selected from a silicon oxide layer, and the doped polysilicon layer 40 is selected from a P-doped polysilicon layer.
In one embodiment, the tunnel oxide layer 30 has a thickness of 2nm or less, and the doped polysilicon layer 40 has a thickness of 100nm to 200 nm.
As can be seen in fig. 1, the surrounding plating layer 50 is deposited on the front surface of the coated silicon wafer, and in one embodiment, the surrounding plating layer 50 is a doped polysilicon structure and/or a polysilicon structure.
In step S2, the activation process can lay a foundation for the chain oxidation reaction to obtain the first oxide layer 60 and the second oxide layer 70, and in one embodiment, the temperature in the activation process is 800 ℃ to 860 ℃.
The first oxide layer 60 covers the front side of the coated silicon wafer, and it can be seen that the first oxide layer 60 is formed by a chain oxidation reaction using a doped polysilicon structure or a polysilicon structure and the material of the boron diffusion layer 10 as an oxidation substrate, and the second oxide layer 70 covers the back side of the coated silicon wafer, and it can be seen that the second oxide layer 70 is formed by a chain oxidation reaction using the material of the doped polysilicon layer 40 as an oxidation substrate. In order to better control the thickness of the first oxide layer 60 and the second oxide layer 70, in one embodiment, the temperature in the step of the chain oxidation reaction is 500 ℃ to 600 ℃.
The chain oxidation reaction may be performed at the same temperature or may be performed in stages at different temperatures, and when the chain oxidation reaction is performed in stages at different temperatures, the thicknesses of the first oxide layer 60 and the second oxide layer 70 may be more uniform.
In an embodiment, the step of the chain oxidation reaction includes passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, and the temperature of the first temperature zone to the temperature of the fourth temperature zone may be increased gradually, decreased gradually, or increased gradually and decreased gradually.
When the temperature of the first temperature zone is increased to the temperature of the fourth temperature zone and then decreased, preferably, the temperature is increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃, and then decreased to 565 ℃ to 585 ℃, and further preferably, the temperature of the first temperature zone is 510 ℃ to 530 ℃, the temperature of the second temperature zone is 580 ℃ to 595 ℃, the temperature of the third temperature zone is 590 ℃ to 595 ℃, and the temperature of the fourth temperature zone is 565 ℃ to 585 ℃.
When the temperature of the first temperature zone to the temperature of the fourth temperature zone increases, the temperature is preferably increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃; further preferably, the temperature of the first temperature zone is 510-530 ℃, the temperature of the second temperature zone is 580-595 ℃, the temperature of the third temperature zone is 590-595 ℃, and the temperature of the fourth temperature zone is 565-585 ℃.
When the temperature of the first temperature zone decreases to the temperature of the fourth temperature zone, preferably, the temperature decreases from 590 ℃ to 600 ℃ to 510 ℃ to 530 ℃, further preferably, the temperature of the first temperature zone is 595 ℃ to 600 ℃, the temperature of the second temperature zone is 565 ℃ to 595 ℃, the temperature of the third temperature zone is 530 ℃ to 565 ℃, and the temperature of the fourth temperature zone is 510 ℃ to 530 ℃.
Compared with the case that the temperature of the first temperature zone and the temperature of the fourth temperature zone are increased or decreased gradually, the temperature of the first temperature zone and the temperature of the fourth temperature zone are increased gradually first and then decreased gradually, so that the advantages of improving efficiency, improving yield and the like are achieved.
In one embodiment, the first oxide layer 60 has a thickness of 3nm to 5nm, and the second oxide layer 70 has a thickness of 2nm to 3 nm.
The function of steps S3 and S4 is to remove the first oxide layer 60 while leaving the second oxide layer 70, so that in step S5, the cladding layer 50 on the front side of the coated silicon wafer and the second oxide layer 70 on the back side of the coated silicon wafer are in direct contact with the second alkaline solution, and the doped polysilicon layer 40 and the tunnel oxide layer 30 on the back side of the coated silicon wafer are prevented from being in direct contact with the second alkaline solution.
In step S3, a water film 80 may be formed on the surface of the second oxide layer 70 by spraying, and H in the water film 80 is generated due to the hydrophilicity of the second oxide layer 702O can attach to the back side of the coated silicon wafer through hydrogen bonding.
In step S4, in order to more effectively remove the first oxide layer 60 while better retaining the second oxide layer 70, in one embodiment, the first acidic solution is selected from an HF solution with a mass fraction of 7% to 9%.
Note that, in step S4, when the concentration of the first acidic solution is higher than 15%, the partial wraparound plating layer 50 may be removed in the first acidic solution.
In one embodiment, in order to better retain the second oxide layer 70 and remove the first oxide layer 60, the step of removing the first oxide layer 60 using the first acidic solution includes: and providing a first acidic solution, controlling the coated silicon wafer to float in the first acidic solution, so that the front surface of the coated silicon wafer is contacted with the first acidic solution, and the back surface of the coated silicon wafer is not contacted with the first acidic solution, thereby removing the first oxide layer 60.
In one embodiment, steps S3 and S4 are performed in a chain borosilicate glass removal station or a trough borosilicate glass removal apparatus.
In step S5, the first alkaline solution can remove the first acidic solution remaining on the surface of the coated silicon wafer, and simultaneously the water film 80 on the back surface of the coated silicon wafer is also removed.
In one embodiment, the first alkaline solution is at least one selected from a NaOH solution or a KOH solution, and the mass fraction of the first alkaline solution is 17% to 19%.
In one embodiment, the temperature in the step of cleaning the coated silicon wafer by using the first alkaline solution is 50-70 ℃.
The second alkaline solution can remove the wraparound plating layer 50 on the front surface of the coated silicon wafer and the second oxidation layer 70 on the back surface of the coated silicon wafer because the second alkaline solution comprises the additive.
In one embodiment, the second alkaline solution is selected from at least one of NaOH solution or KOH solution, and the mass fraction of the second alkaline solution is 7% to 8%.
In one embodiment, the additive comprises at least one of a cleaning agent, an oxidizing agent, a diffusing agent, a surfactant, a buffering agent, a defoaming agent, glucose or an accelerating agent, and the mass fraction of the additive in the second alkaline solution is 1% -3%.
In one embodiment, the temperature in the step of cleaning the coated silicon wafer by using the second alkaline solution is 50-70 ℃.
It should be noted that the wraparound plating layer 50 may also be present on the side surface of the coated silicon wafer, and the wraparound plating layer 50 on the side surface can be removed by the second alkaline solution.
The third alkaline solution can remove the second alkaline solution remained on the surface of the coated silicon wafer because the third alkaline solution comprises the oxidant.
In one embodiment, the third alkaline solution is at least one selected from a NaOH solution or a KOH solution, and the mass fraction of the third alkaline solution is 15% to 17%.
In one embodiment, the oxidizing agent comprises H2O2And the mass fraction of the oxidant in the third alkaline solution is 2-3%.
In one embodiment, the step of cleaning the coated silicon wafer by using the fourth alkaline solution is performed at a temperature of 20 ℃ to 40 ℃.
In one embodiment, the second acidic solution is selected from a mixed solution of an HF solution, an HCl solution and water, the mass fraction of the HF solution is 36% -38%, the mass fraction of the HCl solution is 48% -50%, and the volume ratio of the HF solution to the HCl solution to the water is 15:1:33-16:1: 35.
In one embodiment, after the step of cleaning the coated silicon wafer with the second acidic solution, the coated silicon wafer is taken out of the second acidic solution, the second acidic solution remaining on the surface is washed away with water, and then dehydration treatment is performed to obtain the coated silicon wafer after the spin coating is removed.
In one embodiment, step S5 is performed in a tank-type alkali polishing machine.
Therefore, in the winding-removing plating method provided by the invention, after the coated silicon wafer is cleaned by sequentially utilizing the first alkaline solution, the second alkaline solution containing the additive, the third alkaline solution containing the oxidant and the second acidic solution, the winding plating layer 50 on the front surface of the coated silicon wafer and the second oxidation layer 70 on the back surface of the coated silicon wafer are removed, and the tunneling oxidation layer 30 and the doped polycrystalline silicon layer 40 on the back surface of the coated silicon wafer are completely retained due to the protection of the second oxidation layer 70, so that the winding plating layer 50 is removed, the structure of the coated silicon wafer is effectively protected to be complete, the surface of the coated silicon wafer after winding-removing plating is bright, and the appearance and the performance are excellent.
In addition, the method for deswirling and plating the tunneling oxide layer is matched with a production line of the tunneling oxide layer passivation contact solar cell, and the required acid and alkaline solution are the same as those used in the production line, so that the method is easy to obtain.
In one embodiment, the reflectivity of the film-coated silicon wafer after the spin coating is removed reaches between 5.0% and 6.0% by referring to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell.
The invention also provides a preparation method of the tunneling oxide layer passivation contact solar cell comprising the despun plating method.
In one embodiment, the method for preparing the tunneling oxide layer passivated contact solar cell comprises the following steps:
providing a silicon chip 20, sequentially cleaning the silicon chip 20, texturing, boron expanding, back etching, forming a tunneling oxide layer 30 and a polysilicon layer, forming a doped polysilicon layer 40 by phosphorus diffusion, removing winding plating, winding plating an anti-reflection layer, printing and sintering.
Because the surface of the coated silicon wafer obtained by the decoiling and plating method is neat and bright, and the appearance and the performance are excellent, the tunneling oxide layer passivated contact solar cell prepared by the preparation method of the tunneling oxide layer passivated contact solar cell provided by the invention has excellent photoelectric conversion efficiency.
Hereinafter, the method of deplating and the method of fabricating a tunnel oxide passivation contact solar cell will be further described with reference to the following specific examples.
In the de-winding plating method provided in examples 1 to 8 and comparative examples 1 to 6, the plated silicon wafer includes a silicon wafer 20, a tunnel oxide layer 30 and a doped polysilicon layer 40 stacked on the back surface of the silicon wafer 20, and a boron diffusion layer 10 stacked on the front surface of the silicon wafer 20, wherein the silicon wafer 20 is an N-type silicon wafer 20, the boron diffusion layer 10 is a borosilicate glass layer, the tunnel oxide layer 30 is a silicon oxide layer, and the doped polysilicon layer 40 is selected from a P-doped polysilicon layer.
The surface of the coated silicon wafer is provided with a winding coating layer 50 generated by winding coating, and the winding coating layer 50 is of a doped polycrystalline silicon structure and a polycrystalline silicon structure.
Example 1
And providing a coated silicon wafer.
The coated silicon wafer is placed at 830 ℃ for activation treatment, then the coated silicon wafer passes through a chain oxygen machine to form a first oxidation layer 60 and a second oxidation layer 70, the belt speed of the machine is 2.1m/min, the oxygen flow rate is 120 standard liters per minute, the chain oxygen machine is divided into four temperature zones, wherein the temperature of the first temperature zone is 520 ℃, the temperature of the second temperature zone is 595 ℃, the temperature of the third temperature zone is 595 ℃, the temperature of the fourth temperature zone is 575 ℃, the first oxidation layer 60 covers the front surface of the coated silicon wafer and has the thickness of 3nm, and the second oxidation layer 70 covers the back surface of the coated silicon wafer and has the thickness of 3 nm.
Placing the coated silicon wafer on a chain type BSG removing machine, and forming a water film 80 on the back of the coated silicon wafer in a spraying mode; and (3) floating the front side of the coated silicon wafer downwards in a 7.65% HF solution, wherein the front side of the coated silicon wafer is in contact with the first acidic solution, and the back side of the coated silicon wafer is not in contact with the first acidic solution, so that the first oxide layer 60 is removed.
Placing the coated silicon wafer in a groove type alkali polishing machine table, wherein the groove type alkali polishing machine table is provided with a plurality of functional grooves, the first functional groove is internally provided with a KOH solution with the mass fraction of 18.85%, the temperature is 65 ℃, the second functional groove is a water groove, the third functional groove is internally provided with a KOH solution with the mass fraction of 7.92%, the KOH solution also comprises a winding plating removal additive, the mass fraction of the additive in the KOH solution is 1% -3%, the temperature is 64 ℃, the fourth functional groove and the fifth functional groove are both water grooves, the sixth functional groove is internally provided with a KOH solution with the mass fraction of 15.55%, and the KOH solution also comprises H2O2，H2O2The mass fraction of the solution in KOH is 2.64 percent, the temperature is 25 ℃, the seventh functional tank is a water tank, the eighth functional tank is a mixed solution of HF solution with the mass fraction of 37 percent, HCl solution with the mass fraction of 49 percent and water, the volume ratio of the HF solution to the HCl solution to the water is 15:1:34, the ninth functional tank is a water tank, and the tenth functional tank is used for pre-dehydration; and (3) sequentially passing the coated silicon wafer through the first functional groove to the tenth functional groove, wherein the coated silicon wafer stays in the first functional groove for 3min, stays in the third functional groove for 520s, stays in the sixth functional groove for 130s, stays in the eighth functional groove for 300s, and is finally dried to obtain the coated silicon wafer after the winding plating.
The reflectivity of the coated silicon wafer obtained in example 1 after the decoating is between 5.9% according to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell.
Example 2
And sequentially performing winding plating of an antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the embodiment 1 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 24.0%.
Example 3
Example 3 was carried out as described in example 1, except that the chain oxygen reaction was not carried out, but the 830 ℃ activated coated silicon wafer was directly placed at 550 ℃ for an oxidation reaction for 2 min.
The reflectivity of the coated silicon wafer obtained in example 3 after the decoating is 4.2% according to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell.
Example 4
And sequentially performing winding plating of an antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the embodiment 3 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 22.8%.
Example 5
Example 5 was carried out with reference to example 1, except that the temperature of the first temperature zone was 521 deg.c, the temperature of the second temperature zone was 590 deg.c, the temperature of the third temperature zone was 590 deg.c and the temperature of the fourth temperature zone was 570 deg.c.
The reflectivity of the coated silicon wafer obtained in example 5 after the decoating is 5.5% according to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell.
Example 6
And sequentially performing winding plating of an antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the embodiment 5 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 23.9%.
Example 7
Example 7 was carried out with reference to example 1, except that the temperature of the first temperature zone was 530 deg.c, the temperature of the second temperature zone was 580 deg.c, the temperature of the third temperature zone was 590 deg.c, the temperature of the fourth temperature zone was 565 deg.c, the thickness of the first oxide layer 60 was 3nm, and the thickness of the second oxide layer 70 was 3 nm.
The reflectivity of the coated silicon wafer obtained in example 7 after decoating was 5.6% according to the test standard for the passivation contact of the back surface of the solar cell with the tunnel oxide layer.
Example 8
The coated silicon wafer subjected to the spin coating removal provided in example 7 is sequentially subjected to spin coating of an antireflection layer, printing and sintering to obtain a tunnel oxide layer passivated contact solar cell, and the photoelectric conversion efficiency is 23.8%.
Comparative example 1
Comparative example 1 was carried out with reference to example 1, except that the coated silicon wafer was directly placed in a tank type alkali polishing machine after forming a water film 80 on the back surface of the coated silicon wafer without performing activation treatment and chain oxidation reaction.
Referring to the test standard of the back surface of the solar cell in contact with the passivation of the tunneling oxide layer, the reflectivity of the film-coated silicon wafer obtained in the comparative example 1 after the film-coating is removed is 4.0%.
Comparative example 2
And (3) sequentially performing winding plating antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the comparative example 1 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 22.8%.
Comparative example 3
Comparative example 3 the process was carried out as in example 1, except that the first oxide layer 60 was not removed, and the coated silicon wafer was placed directly in a tank-type alkaline polisher station.
According to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell, the reflectivity of the film-coated silicon wafer obtained in the comparative example 3 after the film-coating is removed is 5.3%.
Comparative example 4
And (3) sequentially performing winding plating antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the comparative example 3 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 22.9%.
Comparative example 5
Comparative example 5 was conducted with reference to example 1 except that the water film 80 was not formed on the back surface of the coated silicon wafer.
According to the test standard of the passivation contact of the tunneling oxide layer on the back surface of the solar cell, the reflectivity of the film-coated silicon wafer obtained in the comparative example 5 after the film-coating is removed is 4.1%.
Comparative example 6
And (3) sequentially performing winding plating antireflection layer, printing and sintering on the film-coated silicon wafer subjected to winding plating removal provided by the comparative example 5 to obtain the tunneling oxide layer passivated contact solar cell, wherein the photoelectric conversion efficiency is 22.9%.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A decoiling method is characterized by comprising the following steps:
providing a coated silicon wafer, wherein the coated silicon wafer comprises a silicon wafer, a tunneling oxide layer and a doped polycrystalline silicon layer which are arranged on the back of the silicon wafer in a stacked mode, and a boron diffusion layer which is arranged on the front of the silicon wafer in a stacked mode; the surface of the film-coated silicon wafer is provided with a winding coating layer generated by winding coating;
sequentially carrying out activation treatment and chain type oxidation reaction on the coated silicon wafer, wherein a first oxidation layer covers the front side of the coated silicon wafer, and a second oxidation layer covers the back side of the coated silicon wafer;
forming a water film on the back of the coated silicon wafer;
removing the first oxide layer by using a first acidic solution; and
and cleaning the coated silicon wafer by using a first alkaline solution, a second alkaline solution containing an additive, a third alkaline solution containing an oxidant and a second acidic solution in sequence to remove the winding coating and the second oxidation layer.
2. The method of claim 1, wherein the temperature in the step of activating treatment is 800 ℃ to 860 ℃.
3. The decoiling plating method as recited in claim 1, wherein the temperature in the step of chain oxidation reaction is 500 ℃ to 600 ℃.
4. The decoiling method as claimed in claim 3, wherein in the step of chain oxidation reaction, the temperature is increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃ and then decreased to 565 ℃ to 585 ℃;
alternatively, the temperature is increased from 510 ℃ to 530 ℃ to 590 ℃ to 600 ℃;
alternatively, the temperature is decreased from 590 ℃ to 600 ℃ to 510 ℃ to 530 ℃.
5. The decoiling method of claim 4, wherein the step of chain oxidation reaction comprises passing the activated coated silicon wafer through a chain oxidation station, wherein the chain oxidation station is divided into four temperature zones, the temperature of the first temperature zone is 510-530 ℃, the temperature of the second temperature zone is 580-595 ℃, the temperature of the third temperature zone is 590-595 ℃, and the temperature of the fourth temperature zone is 565-585 ℃.
6. The decoiling method of claim 4, wherein the step of the chain oxidation reaction comprises passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, the temperature of the first temperature zone is 510-530 ℃, the temperature of the second temperature zone is 530-565 ℃, the temperature of the third temperature zone is 565-595 ℃, and the temperature of the fourth temperature zone is 595-600 ℃.
7. The decoiling method of claim 4, wherein the step of the chain oxidation reaction comprises passing the activated coated silicon wafer through a chain oxidation machine, wherein the chain oxidation machine is divided into four temperature zones, the temperature of the first temperature zone is 595-600 ℃, the temperature of the second temperature zone is 565-595 ℃, the temperature of the third temperature zone is 530-565 ℃, and the temperature of the fourth temperature zone is 510-530 ℃.
8. The decoiling method according to any one of claims 1 to 7, wherein the first acidic solution is an HF solution, and the mass fraction of the HF solution is 7% to 9%.
9. The decoiling method of any one of claims 1 to 7, wherein the first alkaline solution is at least one of a NaOH solution or a KOH solution, and the mass fraction of the first alkaline solution is 17 to 19%;
and/or the second alkaline solution is at least one of NaOH solution or KOH solution, the mass fraction of the second alkaline solution is 7-8%, the additive comprises at least one of a cleaning agent, an oxidizing agent, a dispersing agent, a surfactant, a buffering agent, a defoaming agent, glucose or an accelerating agent, and the mass fraction of the additive in the second alkaline solution is 1-3%;
and/or the third alkaline solution is selected from at least one of NaOH solution or KOH solution, the mass fraction of the third alkaline solution is 15-17%, and the oxidant comprises H2O2The mass fraction of the oxidant in the third alkaline solution is 2-3%;
and/or the second acidic solution is selected from a mixed solution of an HF solution, an HCl solution and water, the mass fraction of the HF solution is 36-38%, the mass fraction of the HCl solution is 48-50%, and the volume ratio of the HF solution to the HCl solution to the water is 15:1:33-16:1: 35.
10. The method of any one of claims 1 to 7, wherein the method is suitable for decoiling of a tunnel oxide passivated contact solar cell.
11. A method of fabricating a tunnel oxide passivated contact solar cell, the method comprising the method of deplating according to any one of claims 1 to 10.
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