CN108899376A - A kind of production method of solar battery and its selective emitting electrode structure - Google Patents
A kind of production method of solar battery and its selective emitting electrode structure Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000006117 anti-reflective coating Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention provides the production method of a kind of solar battery and its selective emitting electrode structure, provide by pretreated silicon wafer；First time diffusion is carried out to silicon wafer, forms the first doped layer in front side of silicon wafer；Second is carried out to silicon wafer to spread, forms the second doped layer above the first doped layer, and the doping concentration of the second doped layer is greater than the doping concentration of the first doped layer；The second doped layer for retaining default front electrode region, etches away the second doped layer between default front electrode region；Front electrode is formed above second doped layer in default front electrode region.Since the second doped layer, that is, heavily doped layer and the first doped layer, that is, lightly-doped layer diffuse to form twice, therefore, the doping concentration of lightly-doped layer can be made very low, keep the doping concentration of heavily doped layer very high, and then the doping concentration difference of heavily doped layer and lightly-doped layer can be increased, promote the transfer efficiency of solar battery.
Description
Technical field
The present invention relates to technical field of solar, emit more specifically to a kind of solar battery and its selectivity
The production method of pole structure.
Background technique
The ultimate aim of solar battery is to reduce cost and improve efficiency, in the manufacture of solar cells work of current standard
Under skill, the promotion of efficiency has had reached the limit.In numerous parameters of solar battery, selective emitter
(Selective-Emiter, SE) is one of the parameter that can most influence PN junction crystal silicon solar energy battery transfer efficiency.
Selective emitter is to carry out heavy doping in front electrode (metal grid lines) and silicon wafer contact site, in front electrode
Between the structure that is lightly doped, can reduce that diffusion layer is compound, improve the short wave response of light, while reducing front electrode
With the contact resistance of silicon wafer so that short circuit current, open-circuit voltage and fill factor are all preferably improved, so as to be promoted
The transfer efficiency of solar battery.
The production method of traditional selective emitting electrode structure includes：After carrying out One Diffusion Process to the silicon wafer of cleaning and texturing,
In the position wax spray of the front electrode of silicon chip surface, then with HF and HNO3The not no wax spray of mixed solution etching region, carry out shape
At the structure for forming heavy doping in the position of front electrode, being lightly doped in other positions formation.Alternatively, to the silicon wafer of cleaning and texturing
After carrying out One Diffusion Process, the junction depth of the PN junction of front electrode position beaten with laser deeper, can be equally formed in just
The position of face electrode forms heavy doping, forms the structure being lightly doped in other positions.
But in the method for traditional One Diffusion Process production selective emitter, due to the surface of heavily doped region to be controlled
Therefore the sufficiently large ohm contact performance to guarantee front electrode and silicon wafer of concentration causes the surface concentration of lightly doped district cannot
That drops is very low, and the doping concentration difference so as to cause heavily doped region and lightly doped district is smaller, leads to open-circuit voltage and short circuit current
It cannot be highly improved, and then cause the transfer efficiency of solar battery that cannot be highly improved.
Summary of the invention
In view of this, the present invention provides the production method of a kind of solar battery and its selective emitting electrode structure, with
The doping concentration difference for solving heavily doped region caused by existing selective emitter production method and lightly doped district is smaller, in turn
The problem of transfer efficiency of caused solar battery cannot be highly improved.
To achieve the above object, the present invention provides the following technical solutions：
A kind of production method of selective emitting electrode structure, including：
It provides and passes through pretreated silicon wafer；
First time diffusion is carried out to the silicon wafer, forms the first doped layer in the front side of silicon wafer；
The impurity of the silicon chip surface is removed, and second is carried out to the silicon wafer and is spread, on first doped layer
It is rectangular at the second doped layer, the doping concentration of second doped layer is greater than the doping concentration of first doped layer；
The second doped layer for retaining default front electrode region, etches away second between the default front electrode region
Doped layer, to expose the first doped layer between the default front electrode region；
Front electrode is formed above second doped layer in the default front electrode region.
Preferably, before forming front electrode, further include：
Antireflective coating is formed in the silicon chip surface.
Preferably, the second doped layer for retaining default front electrode region, etch away the default front electrode region it
Between the second doped layer, including：
Exposure mask is formed in the silicon chip surface, the exposure mask covers the default front electrode region, exposes described pre-
If the region between front electrode region；
Second doped layer in the region that the exposure mask exposes is performed etching, is exposed below second doped layer
First doped layer.
Preferably, the exposure mask is formed using print ceroplastic in the silicon chip surface.
Preferably, the doping concentration of first doped layer is in 5e19cm-3~6e19cm-3In range, including endpoint value.
Preferably, the doping concentration of second doped layer is in 4e20cm-3~5e20cm-3In range, including endpoint value.
A kind of solar battery, using the production method production selectivity transmitting of selective emitting electrode structure as described above
Pole structure, the solar battery include：
Silicon wafer, the front side of silicon wafer have the first doped layer and the second doped layer above first doped layer,
Second doped layer exposes the first doped layer between default front electrode region, the doping concentration of second doped layer
Greater than the doping concentration of first doped layer；
Positioned at the default front electrode region and the front electrode of covering second doped layer, the front electrode is not
Cover the first doped layer between the default front electrode region.
Preferably, further include：
Antireflective coating between second doped layer and the front electrode；
Positioned at the Al-BSF and rear electrode of the silicon chip back side.
Preferably, the doping concentration of first doped layer is in 5e19cm-3~6e19cm-3In range, including endpoint value.
Preferably, the doping concentration of second doped layer is in 4e20cm-3~5e20cm-3In range, including endpoint value.
Compared with prior art, technical solution provided by the present invention has the following advantages that：
The production method of solar battery and its selective emitting electrode structure provided by the present invention, forms in front side of silicon wafer
After first doped layer, the second doped layer is formed above the first doped layer, the concentration of the second doped layer is greater than the first doped layer
Concentration etches away the second doped layer between default front electrode region later, exposes below second doped layer of region
First doped layer, and front electrode is formed above second doped layer in default front electrode region, front electrode can be formed
Corresponding region is the selective emitting electrode structure that region between heavily doped region, front electrode is lightly doped district；
Also, since the second doped layer, that is, heavily doped layer and the first doped layer, that is, lightly-doped layer diffuse to form twice,
Therefore, can be controlled separately the doping concentration of heavily doped layer and lightly-doped layer, so as to so that the doping concentration of lightly-doped layer very
It is low, keep the doping concentration of heavily doped layer very high, and then the doping concentration difference of heavily doped layer and lightly-doped layer can be increased, is promoted
The transfer efficiency of solar battery.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the production method flow chart of selective emitting electrode structure provided in an embodiment of the present invention；
Fig. 2 a~Fig. 2 e is the structure flow chart of the production method of selective emitting electrode structure provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of solar battery provided in an embodiment of the present invention.
Specific embodiment
As described in background, the transfer efficiency of traditional selective emitter crystalline silicon solar cell is difficult to obtain again
To biggish promotion, inventor wants the study found that this is because in the method for traditional One Diffusion Process production selective emitter
The sufficiently large ohm contact performance to guarantee front electrode and silicon wafer of surface concentration for controlling heavily doped region, leads to lightly doped district
Surface concentration cannot drop very low, and the doping concentration difference so as to cause heavily doped region and lightly doped district is smaller, lead to open circuit electricity
Pressure and short circuit current cannot be highly improved, and then cause the transfer efficiency of solar battery that cannot obtain biggish mention
It rises.
Based on this, the present invention provides a kind of production methods of selective emitting electrode structure, to overcome the prior art to exist
The above problem, including：
It provides and passes through pretreated silicon wafer；
First time diffusion is carried out to the silicon wafer, forms the first doped layer in the front side of silicon wafer；
The impurity of the silicon chip surface is removed, and second is carried out to the silicon wafer and is spread, on first doped layer
It is rectangular at the second doped layer, the doping concentration of second doped layer is greater than the doping concentration of first doped layer；
The second doped layer for retaining default front electrode region, etches away second between the default front electrode region
Doped layer, to expose the first doped layer between the default front electrode region；
Front electrode is formed above second doped layer in the default front electrode region.
The present invention also provides a kind of solar batteries, including：
Silicon wafer, the front side of silicon wafer have the first doped layer and the second doped layer above first doped layer,
Second doped layer exposes the first doped layer between default front electrode region, the doping concentration of second doped layer
Greater than the doping concentration of first doped layer；
Positioned at the default front electrode region and the front electrode of covering second doped layer, the front electrode is not
Cover the first doped layer between the default front electrode region.
The production method of solar battery and its selective emitting electrode structure provided by the invention forms the in front side of silicon wafer
After one doped layer, the second doped layer is formed above the first doped layer, the concentration of the second doped layer is greater than the dense of the first doped layer
Degree, etches away the second doped layer between default front electrode region later, exposes the below second doped layer of region
One doped layer, and front electrode is formed above second doped layer in default front electrode region, front electrode pair can be formed
Answering region is the selective emitting electrode structure that the region between heavily doped region, front electrode is lightly doped district；
Also, since the second doped layer, that is, heavily doped layer and the first doped layer, that is, lightly-doped layer diffuse to form twice,
Therefore, can be controlled separately the doping concentration of heavily doped layer and lightly-doped layer, so as to so that the doping concentration of lightly-doped layer very
It is low, keep the doping concentration of heavily doped layer very high, and then the doping concentration difference of heavily doped layer and lightly-doped layer can be increased, is promoted
The transfer efficiency of solar battery.
It is core of the invention thought above, to keep the above objects, features and advantages of the present invention more obvious easily
Understand, following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of production methods of selective emitting electrode structure, as shown in Figure 1, including：
S101：It provides and passes through pretreated silicon wafer；
S102：First time diffusion is carried out to the silicon wafer, forms the first doped layer in the front side of silicon wafer；
S103：The impurity of the silicon chip surface is removed, and second is carried out to the silicon wafer and is spread, in first doping
Layer top forms the second doped layer, and the doping concentration of second doped layer is greater than the doping concentration of first doped layer；
S104：The second doped layer for retaining default front electrode region, etches away between the default front electrode region
The second doped layer, to expose the first doped layer between the default front electrode region；
S105：Front electrode is formed above second doped layer in the default front electrode region.
Wherein, before forming front electrode, further include：Antireflective coating is formed in the silicon chip surface.
The second doped layer for retaining default front electrode region, etches away second between the default front electrode region
Doped layer, including：
Exposure mask is formed in the silicon chip surface, the exposure mask covers the default front electrode region, exposes described pre-
If the region between front electrode region；
Second doped layer in the region that the exposure mask exposes is performed etching, is exposed below second doped layer
First doped layer.
In the present embodiment, the exposure mask is formed using print ceroplastic in the silicon chip surface, and still, the present invention is not
It is only limitted to this, in other embodiments, exposure mask can also be photoresist film etc., and details are not described herein.Also, in its of the invention
In his embodiment, can also use laser ablation method or other methods, to the second doped layer between front electrode into
Row etching.
Below with reference to structure chart, the production process of selective emitting electrode structure is illustrated.
Firstly, as shown in Figure 2 a, providing by pretreated silicon wafer 1, the pretreatment refers to cleaning and making herbs into wool etc..It is optional
Ground, the silicon wafer 1 in the present embodiment is p type single crystal silicon piece, and certainly, the present invention is not limited to this, in other embodiments, silicon wafer
1 can also be N-type silicon chip.
Later, as shown in Figure 2 b, first time diffusion is carried out to silicon wafer 1, Doped ions are phosphonium ion, on 1 surface of silicon wafer
The first doped layer 10 is formed, i.e., forms PN junction in silicon wafer 1, certainly, in other embodiments of the invention, can also be used
Other Doped ions.
Later, as shown in Figure 2 c, the impurity such as phosphorosilicate glass etc. on 1 surface of silicon wafer is removed, and RCA cleaning is carried out to silicon wafer 1,
Silicon wafer 1 is cleaned for example, by using hydrochloric acid and hydrogen peroxide mixed solution, second then is carried out to silicon wafer 1 and is spread, in silicon wafer 1
Positive first doped layer 10 forms the second doped layer 11, the depth of the second doped layer 11 less than the first doped layer 10 depth,
Second of diffusion is identical as the ion of first time diffusion, is all phosphonium ion, the difference is that, the doping of the second doped layer 11
Concentration is greater than the doping concentration of the first doped layer 10, i.e. the second doped layer 11 is heavily doped layer, and the first doped layer 10 is to be lightly doped
Layer.Also, the depth of the second doped layer 11 is less than the depth of the first doped layer 10, in this way between default front electrode region
The second doped layer 11 perform etching after, the first doped layer 10 under it can be exposed.Optionally, first doped layer 10
Ion doping concentration is in 5e19cm-3~6e19cm-3In range, including endpoint value, the ion doping concentration of the second doped layer 11 exist
4e20cm-3~5e20cm-3In range, including endpoint value.
Later, as shown in Figure 2 d, on 1 surface of silicon wafer, print wax forms exposure mask, which covers default front electrode region
The second doped layer 11, expose the second doped layer 11 between default front electrode region；It mixes exposure mask exposes second
After diamicton 11 performs etching, the first doped layer 10 of 11 lower section of the second doped layer is exposed, and the second of exposure mask overlay area mixes
Diamicton 11 is kept down.
Later, as shown in Figure 2 e, antireflective coating 12 is formed on 1 surface of silicon wafer, and is mixed on 12 surface of antireflective coating with second
The corresponding default front surface region of diamicton 11 forms front electrode 13.Certainly, also Al-BSF and back side electricity to be formed at 1 back side of silicon wafer
Extremely etc., details are not described herein.Optionally, the antireflective coating in the present embodiment is silicon nitride film, and still, the present invention is not limited in
This.
The production method of selective emitting electrode structure provided in an embodiment of the present invention, due to the second doped layer, that is, heavily doped layer
It is diffuseed to form twice with the first doped layer, that is, lightly-doped layer, therefore, can be controlled separately heavily doped layer and lightly-doped layer
Doping concentration, so as to keep the doping concentration of heavily doped layer very high, and then can increase so that the doping concentration of lightly-doped layer is very low
The doping concentration difference of big heavily doped layer and lightly-doped layer, promotes the open-circuit voltage and transfer efficiency of solar battery.Also, it adopts
The production that selective emitting electrode structure of the present invention can be realized with the equipment of original production solar battery, has saved production
Cost improves production efficiency.
The embodiment of the invention also provides a kind of solar batteries, make selectivity hair using production method as described above
Emitter structure, as shown in figure 3, the solar battery includes silicon wafer 1,1 front of silicon wafer with the first doped layer 10 and positioned at first
Second doped layer 11 of 10 top of doped layer, the second doped layer 11 expose the first doped layer between default front electrode region
10, the doping concentration of the second doped layer 11 is greater than the doping concentration of the first doped layer 10；Positioned at default front electrode region and cover
The front electrode 13 of the second doped layer of lid 11, front electrode 13 do not cover the first doped layer between default front electrode region
10。
Wherein, the doping concentration of the first doped layer 10 is in 5e19cm-3~6e19cm-3In range, including endpoint value, second mixes
The doping concentration of diamicton 11 is in 4e20cm-3~5e20cm-3In range, including endpoint value.
Certainly, the solar battery in the present embodiment further includes：
Antireflective coating 12 between the second doped layer 11 and front electrode 13；
Al-BSF 14 and rear electrode 15 positioned at 1 back side of silicon wafer.
In addition, also there is antireflective coating above 1 back side of silicon wafer, Al-BSF 14 in the embodiment of the present invention, it is no longer superfluous herein
It states.The antireflective coating can be silicon nitride film, be also possible to pellumina etc..
Solar battery provided in an embodiment of the present invention, due to the second doped layer, that is, heavily doped layer and the first doped layer, that is, light
Doped layer diffuses to form twice, therefore, can be controlled separately the doping concentration of heavily doped layer and lightly-doped layer, so as to
Keep the doping concentration of lightly-doped layer very low, keep the doping concentration of heavily doped layer very high, and then heavily doped layer can be increased and gently mixed
The doping concentration difference of diamicton promotes the open-circuit voltage and transfer efficiency of solar battery.Also, use original production sun
The production of selective emitting electrode structure of the present invention can be realized in the equipment of energy battery, has saved the cost of production, has improved production
Efficiency.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of production method of selective emitting electrode structure, which is characterized in that including：
It provides and passes through pretreated silicon wafer；
First time diffusion is carried out to the silicon wafer, forms the first doped layer in the front side of silicon wafer；
The impurity of the silicon chip surface is removed, and second is carried out to the silicon wafer and is spread, it is rectangular on first doped layer
At the second doped layer, the doping concentration of second doped layer is greater than the doping concentration of first doped layer；
The second doped layer for retaining default front electrode region etches away the second doping between the default front electrode region
Layer, to expose the first doped layer between the default front electrode region；
Front electrode is formed above second doped layer in the default front electrode region.
2. the method according to claim 1, wherein further including before forming front electrode：
Antireflective coating is formed in the silicon chip surface.
3. method according to claim 1 or 2, which is characterized in that retain second doped layer in default front electrode region,
The second doped layer between the default front electrode region is etched away, including：
Exposure mask is formed in the silicon chip surface, the exposure mask covers the default front electrode region, exposes described preset just
Region between the electrode zone of face；
Second doped layer in the region that the exposure mask exposes is performed etching, first below second doped layer is exposed
Doped layer.
4. according to the method described in claim 3, it is characterized in that, the exposure mask is using print ceroplastic in the silicon chip surface
It is formed.
5. method according to any one of claims 1 to 4, which is characterized in that the doping concentration of first doped layer exists
5e19cm-3~6e19cm-3In range, including endpoint value.
6. according to the method described in claim 5, it is characterized in that, the doping concentration of second doped layer is in 4e20cm-3~
5e20cm-3In range, including endpoint value.
7. a kind of solar battery, which is characterized in that using the production of the selective emitting electrode structure described in claim 1~6
Method makes selective emitting electrode structure, and the solar battery includes：
Silicon wafer, the front side of silicon wafer has the first doped layer and the second doped layer above first doped layer, described
Second doped layer exposes the first doped layer between default front electrode region, and the doping concentration of second doped layer is greater than
The doping concentration of first doped layer；
Positioned at the default front electrode region and the front electrode of covering second doped layer, the front electrode do not cover
The first doped layer between the default front electrode region.
8. solar battery according to claim 7, which is characterized in that further include：
Antireflective coating between second doped layer and the front electrode；
Positioned at the Al-BSF and rear electrode of the silicon chip back side.
9. solar battery according to claim 7 or 8, which is characterized in that the doping concentration of first doped layer exists
5e19cm-3~6e19cm-3In range, including endpoint value.
10. solar battery according to claim 9, which is characterized in that the doping concentration of second doped layer exists
4e20cm-3~5e20cm-3In range, including endpoint value.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888054A (en) * | 2019-01-16 | 2019-06-14 | 晶科能源科技（海宁）有限公司 | A kind of preparation method of the not damaged selective emitter of photovoltaic cell |
| CN110148558A (en) * | 2019-04-25 | 2019-08-20 | 晶科能源科技（海宁）有限公司 | Match HF/HNO3The ion implanting phosphorus diffusion method of system selective etch |
| CN114975652A (en) * | 2022-07-25 | 2022-08-30 | 浙江晶科能源有限公司 | Photovoltaic cell and manufacturing method thereof |
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| CN110148558A (en) * | 2019-04-25 | 2019-08-20 | 晶科能源科技（海宁）有限公司 | Match HF/HNO3The ion implanting phosphorus diffusion method of system selective etch |
| CN114975652A (en) * | 2022-07-25 | 2022-08-30 | 浙江晶科能源有限公司 | Photovoltaic cell and manufacturing method thereof |
| CN114975652B (en) * | 2022-07-25 | 2022-12-23 | 浙江晶科能源有限公司 | Photovoltaic cell and manufacturing method thereof |
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