CN102623557A - Technology for preparing dead layer-free emitting electrode of solar battery through alkali method - Google Patents
Technology for preparing dead layer-free emitting electrode of solar battery through alkali method Download PDFInfo
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- CN102623557A CN102623557A CN2012100838876A CN201210083887A CN102623557A CN 102623557 A CN102623557 A CN 102623557A CN 2012100838876 A CN2012100838876 A CN 2012100838876A CN 201210083887 A CN201210083887 A CN 201210083887A CN 102623557 A CN102623557 A CN 102623557A
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Abstract
The invention belongs to the manufacturing technical field of single crystal silicon solar batteries, and particularly relates to a technology for preparing a dead layer-free emitting electrode of a solar battery through an alkali method. The invention adopts such a way that the emitting electrode is first prepared through a traditional diffusion method, and then the dead-layer emitting electrode region with high doping concentration is corroded through NaOH and IPA solution with a certain concentration, so that the dead layer-free emitting electrode with good performance is prepared. According to the technology provided by the invention, the dead-layer emitting electrode region on the surface of a cell can be effectively removed, so that short wave response of the solar battery is improved, dark current is reduced, the open-circuit voltage of a cell is effectively improved, and the industrialized production is facilitated.
Description
Technical field
The invention belongs to the manufacture technology field of single crystal silicon solar cell, be specifically related to a kind of alkaline process and prepare the technology that solar cell does not have the dead layer emitter.
Background technology
Along with the exhaustion of fossil energy, solar cell is developed as a kind of green energy resource fast.Crystal-silicon solar cell becomes the main flow in present solar cell field, how to reduce the cost of solar cell, and the efficient that improves solar cell becomes the emphasis of domestic and international crystal-silicon solar cell research.
Emitter is as the key components of solar cell, and its surface doping concentration directly influences the efficient of solar cell.Because work as doping content greater than 10
20/ cm
3The time, will become the dead layer district, therefore, through reducing the doping content of emitter surface, improve of the response of battery sheet, and reduce dark current short-wave band, improve open circuit voltage, become the main method of present raising battery efficiency.Yet the preparation of traditional emitter, the doping content of silicon chip surface all is higher than 10
20/ cm
3, therefore the surface can form the dead layer district of tens nanometers, influences the efficient of battery.
Summary of the invention
The object of the invention is exactly the defective to above-mentioned existence, provides a kind of alkaline process to prepare the technology that solar cell does not have the dead layer emitter, and conventional diffusion is adopted in this invention earlier; Adopt certain density NaOH and IPA solution then; The method that the dead layer district that doping content is higher etches away, preparation has the no dead layer emitter of premium properties, and the present invention can remove the dead layer emitter region on battery sheet surface effectively; Improve the short wave response of solar cell; Reduce dark current, effectively improve the open circuit voltage of battery sheet, and be easy to suitability for industrialized production.
Technical scheme of the present invention is: a kind of alkaline process prepares the technology that solar cell does not have the dead layer emitter, may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip of diffusion; Put into NaOH and IPA solution; Soak 0.5-30min, the resistance of preparation side is the no dead layer emitter of 50-150ohm/sq, and the temperature of described NaOH and IPA solution is 50-95 ℃; Wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L;
(3) silicon chip being put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes, and after the cleaning, the doping content of emitter surface is lower than 10
20/ cm
3
Silicon chip of the present invention is monocrystalline silicon or type monocrystalline silicon.
Beneficial effect of the present invention is: a kind of alkaline process of the present invention prepares the technology that solar cell does not have the dead layer emitter, adopts conventional diffusion earlier, adopts certain density NaOH and IPA solution then; The method that the dead layer emitter region that doping content is higher etches away; Preparation has the no dead layer emitter of premium properties, and its operation comprises, the preparation of conventional diffusion emitter; NaOH and IPA solution etch away silex glass and the highly doped dead layer emitter region that contains doped source, clean.The present invention is applied to the crystal silicon solar battery field, can remove the dead layer emitter region on battery sheet surface effectively, improves the short wave response of solar cell, reduces dark current, effectively improves the open circuit voltage of battery sheet, and is easy to suitability for industrialized production.
Description of drawings:
Shown in Figure 1 is crystalline silicon conventional diffusion structural representation;
Shown in Figure 2 do not have dead layer emitter structure sketch map for the present invention;
Among the figure, 1. diffuse source atom 2. contains the silex glass of doped source, and 3. the dead layer emitter does not 4. have the dead layer emitter, 5. silicon chip.
Embodiment:
In order to understand the present invention better, specify technical scheme of the present invention below in conjunction with accompanying drawing, but the present invention is not limited thereto.
The present invention is that a kind of alkaline process prepares the technology that solar cell does not have the dead layer emitter, and technical scheme does, the preparation of conventional diffusion emitter, and NaOH and IPA solution etch away silex glass 2 and the highly doped dead layer emitter 3 that contains doped source, clean.
Specifically may further comprise the steps:
(1) with the silicon chip after the making herbs into wool 5, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip 5 of diffusion; Put into NaOH and IPA solution; Soak 0.5-30min, the resistance of preparation side is the no dead layer emitter 4 of 50-150ohm/sq, and the temperature of described NaOH and IPA solution is 50-95 ℃; Wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L;
(3) silicon chip 5 being put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes, and after the cleaning, no dead layer emitter 4 surperficial doping contents are lower than 10
20/ cm
3
With the p type single crystal silicon sheet 5 after the alkali making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, and the side's of obtaining resistance is the emitter of 25ohm/sq; To accomplish the silicon chip 5 of diffusion then; Put into the IPA mixed solution that NaOH that concentration is 24g/L and concentration are 300g/L; The temperature of solution is controlled at 78 ℃; Soak 140s, etch away the silex glass 2 and the highly doped dead layer emitter 3 that contain doped source, the side's of obtaining resistance is the no dead layer emitter 4 of 75ohm/sq; It is that 10% HCl and concentration are 6% HF acid mixed solution that the silicon chip 5 of removing dead layer emitter 3 districts is put into concentration, soaks 30s; To accomplish the silicon chip 5 that cleans at last, accomplish edge isolation successively, the antireflective coating deposition, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 18.4%.
With the P type V-type class monocrystalline silicon piece 5 after the alkali making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, and the side's of obtaining resistance is the emitter of 20ohm/sq; To accomplish the silicon chip 5 of diffusion then; Put into the IPA mixed solution that NaOH that concentration is 24g/L and concentration are 300g/L; The temperature of solution is controlled at 78 ℃; Soak 180s, etch away the silex glass 2 and the highly doped dead layer emitter 3 that contain doped source, the side's of obtaining resistance is the no dead layer emitter 4 of 73ohm/sq; It is that 10% HCl and concentration are 6% HF acid mixed solution that the silicon chip 5 of removing dead layer emitter 3 districts is put into concentration, soaks 30s; To accomplish the silicon chip 5 that cleans at last, accomplish edge isolation successively, the antireflective coating deposition, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 18.2%.
Claims (3)
1. an alkaline process prepares the technology that solar cell does not have the dead layer emitter, it is characterized in that, may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip of diffusion, and put into NaOH and IPA solution, and soak 0.5-30min, it is the no dead layer emitter of 50-150ohm/sq that preparation side hinders;
(3) silicon chip being put into concentration is that 5-15% HCl and concentration are that 2%-10% HF acid mixed solution cleaned 0.5-5 minutes.
2. alkaline process according to claim 1 prepares the technology that solar cell does not have the dead layer emitter; It is characterized in that in the described step (2), the temperature of described NaOH and IPA solution is 50-95 ℃; Wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L.
3. acid system according to claim 1 prepares the technology that solar cell does not have the dead layer emitter, it is characterized in that, described silicon chip is monocrystalline silicon or type monocrystalline silicon.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090016089A (en) * | 2007-08-10 | 2009-02-13 | 엘지전자 주식회사 | Method for forming emitter layer of silicon solar cell |
| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN102214728A (en) * | 2010-04-09 | 2011-10-12 | 赵枫 | Technology for processing dead layers on surface of crystalline silicon solar cell |
-
2012
- 2012-03-27 CN CN2012100838876A patent/CN102623557A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090016089A (en) * | 2007-08-10 | 2009-02-13 | 엘지전자 주식회사 | Method for forming emitter layer of silicon solar cell |
| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| CN101794845A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for preparing selective emitter by one-time diffusion |
| CN102214728A (en) * | 2010-04-09 | 2011-10-12 | 赵枫 | Technology for processing dead layers on surface of crystalline silicon solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
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Application publication date: 20120801 |