CN101866991A - Preparation method of amorphous silicon/crystalline silicon heterojunction solar battery - Google Patents
Preparation method of amorphous silicon/crystalline silicon heterojunction solar battery Download PDFInfo
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- CN101866991A CN101866991A CN201010186962A CN201010186962A CN101866991A CN 101866991 A CN101866991 A CN 101866991A CN 201010186962 A CN201010186962 A CN 201010186962A CN 201010186962 A CN201010186962 A CN 201010186962A CN 101866991 A CN101866991 A CN 101866991A
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Abstract
The invention belongs to the technical field of the preparation of solar battery devices and relates to an amorphous silicon/crystalline silicon heterojunction solar battery and a preparation method thereof. The preparation method comprises the following steps of: treating the texture surface of monocrystalline silicon of a prepared aluminum-back electrode; treating the surface of the monocrystalline silicon with NH3; then, depositing an intrinsic amorphous silicon film, a doped amorphous silicon film and a transparent conductive film; and finally, preparing an Ag grid electrode. The solar battery made by using the method has simple structure and easy produces program. In addition, the surface of the monocrystalline silicon is treated by utilizing the NH3 to decrease the gap state density of an interface and effectively improve the quality of the interface. The method adopts screen printing thermal annealing to form the aluminum-back electrode for substituting a high-doped amorphous silicon film doped at the back, avoids cross contamination and interface failures brought by various doping types in a double-sided deposition process and is easy to implement.
Description
Technical field
The invention belongs to the solar cell device preparing technical field, relate to a kind of amorphous silicon/silicon/crystalline silicon heterojunction solar battery and preparation method thereof.
Background technology
Silicon solar cell is one of implementor of following green energy resource.Use crisis for alleviating future source of energy, substantial contribution is all dropped in countries in the world, supports exploitation, research and the utilization of silicon solar cell.Silicon solar cell is through nearly 30 years development, efficient, reduce cost and stable aspect be improved largely.In following practical application, efficient, cheap and stable is three problems of most critical.In amorphous silicon/silicon/crystalline silicon heterojunction solar battery of the present invention: monocrystalline silicon is for absorbing substrate, amorphous silicon membrane is an emitter, aluminum back electrode also reduces series resistance simultaneously reducing to carry on the back recombination-rate surface, suede structure can carry out secondary reflection to inside battery light, increase light path, improve the absorption of battery to light, resulting battery has and the analogous high efficiency of monocrystalline silicon battery; Adopt the silk screen printing rapid thermal annealing to prepare aluminum back electrode, energy consumption is less; Thin monocrystalline silicon piece and silicon membrane layer, the cost of material is low, and preparation technology is simple relatively; Heterojunction has good temperature characterisitic, and the efficient decay is very little.So among the present invention amorphous silicon/silicon/crystalline silicon heterojunction solar battery can satisfy simultaneously efficiently, cheapness and stable requirement.
Summary of the invention
Amorphous silicon of the present invention/silicon/crystalline silicon heterojunction solar battery preparation method may further comprise the steps:
(1) cleans twin polishing p (n) type monocrystalline silicon piece with the RCA method;
(2) with the SA-6070 aluminium paste as raw material, at the above-mentioned monocrystalline silicon piece back side silk screen printing aluminium paste that cleaned, then under logical oxygen condition, 700 ℃ ± 20 ℃ rapid thermal annealing 1～2min are formed with the metal A l back electrode of ohmic contact;
(3) clean p (n) the type monocrystalline silicon piece that has aluminum back electrode with 1%～2%HF solution, behind a large amount of deionized water rinsings, put into corrosive liquid and carry out the matte preparation, take out monocrystalline silicon piece after corrosion is no less than 25min, and use a large amount of deionized water rinsings;
(4) will put into the PECVD vacuum chamber through the air-dry monocrystalline silicon piece of nitrogen rapidly, vacuum chamber base vacuum degree is 3～6 * 10
-4Pa uses NH
3Handle monocrystalline silicon surface;
(5) being under 200 ℃～220 ℃ conditions at silicon temperature, is reacting gas with silane, above-mentioned through NH
3Deposit thickness is the intrinsic amorphous silicon film of 5～10nm on p (n) the type monocrystalline silicon piece of handling;
(6) be reacting gas with phosphine and silane or borine and silane, on above-mentioned intrinsic amorphous silicon film/p (n) type monocrystalline silicon, deposit thickness is n (p) the type doped amorphous silicon film of 18～25nm;
(7) deposit thickness is 80～100nm on said n (p) type doped amorphous silicon film/intrinsic amorphous silicon film/p (n) type monocrystalline silicon, and transmitance 〉=85%, square resistance are the transparent conductive film of 30～50 Ω;
(8) preparation Ag grid on above-mentioned nesa coating.
Compare with prior art, amorphous silicon/silicon/crystalline silicon heterojunction solar battery of the present invention and preparation method thereof has following characteristics and advantage:
1, the present invention compares with international heterojunction industrialization doped amorphous silicon/intrinsic amorphous silicon/crystal silicon/intrinsic amorphous silicon/doped amorphous silicon solar battery structure, and the battery structure of employing is simple, and process is simple.
2, utilize NH3 to handle monocrystalline silicon surface, reduce the interface gap state density, effectively improve interface quality.
3, battery structure of the present invention is compared with heterojunction industrialization solar battery structure, adopt the silk screen printing rapid thermal annealing to form aluminum back electrode, replaced depositing overleaf highly doped amorphous silicon membrane, avoided different doping types bring in the double-sided deposition process cross pollution and interfacial failure, be easy to realize.
4, the present invention adopts suede structure, can increase light light path in cell body, improves the absorption of battery to light.
5 implementation methods of the present invention are simply unique, are easy to grasp, and are easy to operate, can repeat, with low cost, have clear and definite commercial application prospect.
Description of drawings
Fig. 1 is amorphous silicon of the present invention/silicon/crystalline silicon heterojunction solar battery structural representation;
Wherein 1 is metal gates, and 2 is nesa coating, and 3 is Doped n (p) type amorphous silicon, and 4 is intrinsic amorphous silicon, and 5 is p (n) type monocrystalline silicon, and 6 is the Al back electrode.
Embodiment
Below will the present invention will be described in detail by specific embodiment.
1, before the cell preparation, adopt standard electric sub level cleaning step to clean twin polishing p type CZ monocrystalline silicon piece, the thickness of monocrystalline silicon piece is 220～250 microns, and resistivity is 1～5 Ω cm;
2, with the SA-6070 aluminium paste as raw material, at the above-mentioned monocrystalline silicon piece back side silk screen printing aluminium paste that cleaned, then under logical oxygen condition, 700 ℃ ± 20 ℃ rapid thermal annealing 1min30s are formed with the metal A l back electrode of ohmic contact;
3, clean p (n) the type monocrystalline silicon piece of existing aluminum back electrode with 1%HF solution, behind a large amount of deionized water rinsings, put into the corrosive liquid that is made into 70gKOH, 190ml isopropyl alcohol and 40ml deionized water and carry out the matte preparation, take out monocrystalline silicon piece behind the corrosion 30min, and use a large amount of deionized water rinsings;
4, will put into the PECVD vacuum chamber through the air-dry monocrystalline silicon piece of nitrogen rapidly, reach 3 * 10 at the vacuum chamber background vacuum pressure
-4During Pa, use NH
3Handle monocrystalline silicon surface;
5, being under 200 ℃ of conditions at silicon temperature, is reacting gas with silane, above-mentioned through NH
3On p (n) the type monocrystalline silicon piece of handling, adopting plasma-reinforced chemical vapor deposition deposition techniques thickness is the intrinsic amorphous silicon film of 8nm;
6, being reacting gas with silane and phosphine, on above-mentioned intrinsic amorphous silicon film/p (n) type monocrystalline silicon, is n (p) the type doped amorphous silicon film of 22nm with plasma reinforced chemical vapour deposition thickness;
7, deposit thickness is 100nm on said n (p) type doped amorphous silicon film/intrinsic amorphous silicon film/p (n) type monocrystalline silicon, and transmitance 〉=85%, square resistance are the transparent conductive film of 40 Ω;
8, adopt vacuum coating technology, preparation thickness is 10 microns Ag grid, and the grid line width is 150 microns, and grating spacing is 2mm.
According to amorphous silicon/silicon/crystalline silicon heterojunction solar battery that the present embodiment method is made, its structure is followed successively by Al back electrode, p (n) type crystal silicon, intrinsic amorphous silicon, n (p) type amorphous silicon, nesa coating and metal gates as shown in Figure 1; Described metal A l back electrode thickness is 80～100 microns; The thickness of described intrinsic amorphous silicon film is 5～10nm; The thickness of described n (p) type doped amorphous silicon film is 18～25nm; The thickness of described Ag grid is 5～10 microns, and the grid line width is 100～150 microns, and spacing is 2～3mm; Described p (n) type crystal silicon thickness is 220～250 microns.
According to above battery structure and technology path, adopting CZ monocrystalline silicon is substrate, under the situation of texture, obtains 18% photoelectric conversion efficiency.
1, before the cell preparation, adopt standard electric sub level cleaning step to clean twin polishing p type CZ monocrystalline silicon piece, the thickness of monocrystalline silicon piece is 220～250 microns, and resistivity is 1～5 Ω cm;
2, with the SA-6070 aluminium paste as raw material, at the above-mentioned monocrystalline silicon piece back side silk screen printing aluminium paste that cleaned, then under logical oxygen condition, 700 ℃ ± 20 ℃ rapid thermal annealing 2min are formed with the metal A l back electrode of ohmic contact;
3, clean p (n) the type monocrystalline silicon piece of existing aluminum back electrode with 2%HF solution, behind a large amount of deionized water rinsings, put into the corrosive liquid that is made into 70gKOH, 190ml isopropyl alcohol and 40ml deionized water and carry out the matte preparation, take out monocrystalline silicon piece behind the corrosion 40min, and use a large amount of deionized water rinsings;
4, will put into the PECVD vacuum chamber through the air-dry monocrystalline silicon piece of nitrogen rapidly, reach 6 * 10 at the vacuum chamber background vacuum pressure
-4During Pa, use NH
3Handle monocrystalline silicon surface;
5, being under 220 ℃ of conditions at silicon temperature, is reacting gas with silane, above-mentioned through NH
3On p (n) the type monocrystalline silicon piece of handling, adopting plasma-reinforced chemical vapor deposition deposition techniques thickness is the intrinsic amorphous silicon film of 10nm;
6, being reacting gas with silane and borine, on above-mentioned intrinsic amorphous silicon film/p (n) type monocrystalline silicon, is n (p) the type doped amorphous silicon film of 18nm with plasma reinforced chemical vapour deposition thickness;
7, deposit thickness is 80nm on said n (p) type doped amorphous silicon film/intrinsic amorphous silicon film/p (n) type monocrystalline silicon, and transmitance 〉=85%, square resistance are the transparent conductive film of 50 Ω;
8, adopt vacuum coating technology, preparation thickness is 5 microns Ag grid, and the grid line width is 100 microns, and grating spacing is 3mm.
Each parameter in the foregoing description can be adjusted in this specification scope of disclosure as required, and its concrete scheme can not be exhaustive, and above embodiment is not because of being interpreted as the present invention is openly reached the restriction of execution mode.
Claims (4)
1. amorphous silicon/silicon/crystalline silicon heterojunction solar battery preparation method is characterized in that, preparation process is:
(1) cleans twin polishing p (n) type monocrystalline silicon piece with the RCA method;
(2) with the SA-6070 aluminium paste as raw material, at the above-mentioned monocrystalline silicon piece back side silk screen printing aluminium paste that cleaned, then under logical oxygen condition, 700 ℃ ± 20 ℃ rapid thermal annealing 1～2min are formed with the metal A l back electrode of ohmic contact;
(3) clean p (n) the type monocrystalline silicon piece that has aluminum back electrode with 1%～2%HF solution, behind a large amount of deionized water rinsings, put into corrosive liquid and carry out the matte preparation, take out monocrystalline silicon piece after corrosion is no less than 25min, and use a large amount of deionized water rinsings;
(4) will put into the PECVD vacuum chamber through the air-dry monocrystalline silicon piece of nitrogen rapidly, vacuum chamber base vacuum degree is 3～6 * 10
-4Pa handles monocrystalline silicon surface with NH3;
(5) being under 200 ℃～220 ℃ conditions at silicon temperature, is reacting gas with silane, above-mentioned through NH
3Deposit thickness is the intrinsic amorphous silicon film of 5～10nm on p (n) the type monocrystalline silicon piece of handling;
(6) be reacting gas with phosphine and silane or borine and silane, on above-mentioned intrinsic amorphous silicon film/p (n) type monocrystalline silicon, deposit thickness is n (p) the type doped amorphous silicon film of 18～25nm;
(7) deposit thickness is 80～100nm on said n (p) type doped amorphous silicon film/intrinsic amorphous silicon film/p (n) type monocrystalline silicon, and transmitance 〉=85%, square resistance are the transparent conductive film of 30～50 Ω;
(8) preparation Ag grid on above-mentioned nesa coating.
2. amorphous silicon as claimed in claim 1/silicon/crystalline silicon heterojunction solar battery preparation method is characterized in that, the thickness of monocrystalline silicon piece is 220～250 microns in the described step 1, and resistivity is 1～5 Ω cm.
3. amorphous silicon as claimed in claim 1/silicon/crystalline silicon heterojunction solar battery preparation method is characterized in that, the corrosive liquid that carries out the matte preparation in the described step 3 is formulated by 70gKOH, 190ml isopropyl alcohol and 40ml deionized water.
4. amorphous silicon as claimed in claim 1/silicon/crystalline silicon heterojunction solar battery preparation method is characterized in that, the thickness of the grid described in the step 8 is 5～10 microns, and the grid line width is 100～150 microns, and spacing is 2～3mm.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074619A (en) * | 2010-12-14 | 2011-05-25 | 天津市津能电池科技有限公司 | Simple insulated processing method for amorphous-silicon battery |
| CN102569517A (en) * | 2012-01-10 | 2012-07-11 | 北京航空航天大学 | Nano silicon film solar battery elliptic polarized light real-time monitoring preparation method |
| CN102569479A (en) * | 2012-02-28 | 2012-07-11 | 常州天合光能有限公司 | Laminated silicon base hetero-junction solar battery |
| CN102655185A (en) * | 2011-03-02 | 2012-09-05 | 王立康 | Heterojunction solar cell |
| CN102931267A (en) * | 2012-11-20 | 2013-02-13 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN103094373A (en) * | 2011-03-25 | 2013-05-08 | 南京航空航天大学 | Cu2ZnSnS4/a-Si heterojunction solar cell and manufacturing method thereof |
| CN103107236A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Hetero-junction solar cell and manufacturing method thereof |
| CN103107234A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Hetero-junction solar cell and manufacturing method thereof |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
| CN105304746A (en) * | 2015-09-24 | 2016-02-03 | 新奥光伏能源有限公司 | Heterojunction solar cell and preparation method thereof |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN106816494A (en) * | 2015-12-02 | 2017-06-09 | 钧石(中国)能源有限公司 | A kind of method of heterojunction solar battery reduction series resistance |
| CN110429020A (en) * | 2019-06-28 | 2019-11-08 | 湖南红太阳光电科技有限公司 | A kind of method that Tubular PECVD device prepares amorphous silicon membrane |
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| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
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| CN102074619A (en) * | 2010-12-14 | 2011-05-25 | 天津市津能电池科技有限公司 | Simple insulated processing method for amorphous-silicon battery |
| CN102074619B (en) * | 2010-12-14 | 2012-05-30 | 天津市津能电池科技有限公司 | Insulated processing method for amorphous-silicon battery |
| CN102655185A (en) * | 2011-03-02 | 2012-09-05 | 王立康 | Heterojunction solar cell |
| CN102655185B (en) * | 2011-03-02 | 2016-04-27 | 王立康 | Heterojunction solar cell |
| CN103094373A (en) * | 2011-03-25 | 2013-05-08 | 南京航空航天大学 | Cu2ZnSnS4/a-Si heterojunction solar cell and manufacturing method thereof |
| CN103094373B (en) * | 2011-03-25 | 2016-02-17 | 南京航空航天大学 | Cu 2znSnS 4/ a-Si heterojunction solar battery and preparation method thereof |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN103650170B (en) * | 2011-06-27 | 2017-05-03 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN102569517A (en) * | 2012-01-10 | 2012-07-11 | 北京航空航天大学 | Nano silicon film solar battery elliptic polarized light real-time monitoring preparation method |
| CN102569479A (en) * | 2012-02-28 | 2012-07-11 | 常州天合光能有限公司 | Laminated silicon base hetero-junction solar battery |
| CN102931267A (en) * | 2012-11-20 | 2013-02-13 | 蚌埠玻璃工业设计研究院 | Silicon-based heterojunction solar cell and preparation method thereof |
| CN102931267B (en) * | 2012-11-20 | 2016-08-03 | 蚌埠玻璃工业设计研究院 | A kind of silicon based hetero-junction solaode and preparation method thereof |
| CN103107236A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Hetero-junction solar cell and manufacturing method thereof |
| CN103107234A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Hetero-junction solar cell and manufacturing method thereof |
| CN103107234B (en) * | 2012-12-06 | 2016-03-23 | 杭州赛昂电力有限公司 | Heterojunction solar battery and preparation method thereof |
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
| CN105304746A (en) * | 2015-09-24 | 2016-02-03 | 新奥光伏能源有限公司 | Heterojunction solar cell and preparation method thereof |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
| CN105322043B (en) * | 2015-11-16 | 2017-10-31 | 南昌大学 | It is a kind of can two-sided entering light crystal silicon solar battery and preparation method thereof |
| CN106816494A (en) * | 2015-12-02 | 2017-06-09 | 钧石(中国)能源有限公司 | A kind of method of heterojunction solar battery reduction series resistance |
| CN110429020A (en) * | 2019-06-28 | 2019-11-08 | 湖南红太阳光电科技有限公司 | A kind of method that Tubular PECVD device prepares amorphous silicon membrane |
| CN112349802A (en) * | 2020-10-27 | 2021-02-09 | 福建新峰二维材料科技有限公司 | Manufacturing method of ingot casting single crystal or polycrystalline amorphous silicon heterojunction solar cell |
| CN112349802B (en) * | 2020-10-27 | 2022-07-15 | 福建新峰二维材料科技有限公司 | Manufacturing method of ingot casting single crystal or polycrystalline amorphous silicon heterojunction solar cell |
| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
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