CN202384348U - Amorphous silicon thin-film battery added with electrode modified layers - Google Patents
Amorphous silicon thin-film battery added with electrode modified layers Download PDFInfo
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- CN202384348U CN202384348U CN2011205611554U CN201120561155U CN202384348U CN 202384348 U CN202384348 U CN 202384348U CN 2011205611554 U CN2011205611554 U CN 2011205611554U CN 201120561155 U CN201120561155 U CN 201120561155U CN 202384348 U CN202384348 U CN 202384348U
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- Prior art keywords
- amorphous silicon
- layer
- electrode
- modification layer
- electrode modification
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Abstract
The utility model discloses an amorphous silicon thin-film battery added with electrode modified layers, which comprises a transparent substrate, a front transparent conducting layer, a first electrode modified layer, a first window layer, a second window layer, intrinsic amorphous silicon, N-type amorphous silicon, a second electrode modified layer and a back electrode aluminum film. The utility model further provides a manufacture method for the amorphous silicon thin-film battery added with the electrode modified layers. The manufacture method sequentially includes the steps of washing the transparent substrate; depositing a TCO (transparent conducting oxide ) layer by LPCVD (low pressure chemical vapor deposition); continuously coating films in vacuum (for the first electrode modified layer, the first window layer, the second window layer, the intrinsic amorphous silicon and the N-type amorphous silicon) by PECVD (plasma enhanced chemical vapor deposition); washing and sputtering the second electrode modified layer and the back electrode aluminum film. A pin structure of the amorphous silicon thin-film is employed and a positive electrode modified layer a-GE:H and a negative electrode modified layer ZAO (zinc aluminum oxide) are added, meanwhile, double-layer window layers are employed, adsorption of spectra of sunlight in a short wave area and a long wave area are enhanced, adsorption consumption and series resistance are lowered, and open-circuit voltages and fill factors are improved. By employing the method of continuous film coating, the amorphous silicon thin-film battery added with the electrode modified layers is simple in technology so that manufacture cost can be lowered greatly.
Description
Technical field
The utility model relates to a kind of hull cell, particularly a kind of amorphous silicon membrane battery of setting up the electrode modification layer.
Background technology
Non-crystal silicon solar cell is because but large tracts of land, cost of manufacture is low and have good application prospects with current technical compatibility.In the research of amorphous silicon battery, cost and performance are the themes of current research, and for further raising the efficiency, people make up the lamination amorphous silicon battery, adopt two structures to a plurality of pin single junction cell serial or parallel connections to raise the efficiency.Increase cost of manufacture so beyond doubt, reduced production capacity.
General unijunction pin amorphous silicon battery is the successive sedimentation P on glass at nesa coating TCO
+-a-Si:H, i-a-Si:H, n
+-a-Si:H constitutes, and wherein the amorphous silicon membrane i-a-Si:H of intrinsic is that main light absorbing zone produces a large amount of photo-generated carriers, and n
+And P
+Doped layer does not produce photo-generated carrier basically.This unijunction hull cell technology is simple, but the photic deterioration of amorphous silicon material itself and Spectral matching property completely inadequately cause efficient and stability not good, have limited further developing of amorphous silicon membrane battery.Raise the efficiency, the method for enhanced stability generally is to adopt the material of low absorption of broad-band gap as Window layer, and the material that adopts high Spectral matching.
The carbon doped p is arranged
+The a-SiC:H layer has the band gap of broad, can be used as Window layer.The P of broad-band gap
+The a-SiC:H layer has reduced optical absorption loss, has strengthened the absorption of light at intrinsic layer, has improved short circuit current.But the p of broad-band gap
+The a-SiC:H layer has but increased p
+The anodic interface potential barrier of a-SiC:H layer/tco layer reduces fill factor, curve factor.
Aluminium is owing to good conductivity, low being commonly used in of cost are done cathode material in the solar cell.But in the pin structure, there are negative electrode Al and n too
+The problem that photo-generated carrier is derived between the a-Si:H layer causes series resistance big, and fill factor, curve factor is low.
In this case, on the basis of how to realize raising the efficiency, simplify technology, improve production capacity; How can in unijunction pin structure, utilize the p of broad-band gap
+The a-SiC:H layer increases the utilance of sunlight, can add one again and have appropriate bandgap width and work function matched materials as the anodic interface decorative layer, reduces series resistance and strengthens the collection of anode photo-generated carrier; And the potential barrier that how can reduce cathode interface promotes the derivation of photo-generated carrier, can compensate the deficiency of amorphous silicon Spectral matching again, strengthens shortwave and long wave Spectral matching; These all are problem demanding prompt solutions.
The utility model content
The purpose of the utility model is in order to solve in the above-mentioned existing unijunction pin structure, the problem that the spectrum utilance is not high, series resistance is big that amorphous silicon thin-film solar cell exists, and a kind of amorphous silicon membrane battery of setting up the electrode modification layer is provided.
The utility model is by transparent substrates, preceding transparency conducting layer (TCO), the first electrode modification layer (a-Ge:H), the first Window layer (p
+-μ c-Si:H), the second Window layer (p
+-a-SiC:H), the amorphous silicon membrane battery of setting up the electrode modification layer that constitutes from the bottom up of intrinsic amorphous silicon (i-a-Si:H), n type amorphous silicon (n-a-Si:H), the second electrode modification layer (ZAO), back electrode aluminium film (Al).
Described transparent substrates adopts the glass or the flexible substrate of high transmission rate.
Transparency conducting layer adopts the zinc oxide ZnO:B of boron-doping before described, and forms suede structure, and light passes by battery from it and absorbs, and serves as the electrode of battery again, requires transmitance height, good conductivity, adopts the method preparation of low-pressure chemical vapor deposition (LPCVD).Its thickness is 1000～2000nm.
The described first electrode modification layer adopts amorphous germanium a-Ge:H, with the preparation of plasma reinforced chemical vapour deposition (PECVD) method, adopts GeH
4Transparency conducting layer TCO surface forms thin film before handling, and the modified anode interface reduces the anodic interface potential barrier, and its thickness is 2～10nm.
Described first Window layer adopts p type microcrystal silicon p
+-μ c-Si:H as the window ground floor, increases Spectral matching property and stability, and its thickness is 2～20nm.
Described second Window layer adopts p type noncrystalline silicon carbide p
+-a-SiC:H as the window second layer, utilizes broad-band gap to reduce optical absorption loss, improves short circuit current, and its thickness is 10～30nm.
That described intrinsic amorphous silicon is that absorbed layer adopts is amorphous silicon i-a-Si:H, and as light absorbing zone, its thickness is 200～400nm.
N type amorphous silicon in the described pin structure adopts amorphous silicon n
+-a-Si:H, its thickness 10～30nm.
That the described second electrode modification layer adopts is the zinc-oxide film ZAO that mixes aluminium, adopts sputtering method to form the embellishing cathode interface layer, is used to improve light utilization efficiency, and reduces the cathode interface potential barrier, protects battery simultaneously, and its thickness is 0.2～30nm.
Described back electrode aluminium film adopts the aluminium film, adopts the method for continuous sputter, improves production capacity, and its thickness is 50～200nm.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
As shown in Figure 1, the utility model is by transparent substrates 1, preceding transparency conducting layer (TCO) 2, the first electrode modification layer (a-Ge:H) 3, the first Window layer (p
+-μ c-Si:H) 4, the second Window layer (p
+-a-SiC:H) 5, the amorphous silicon membrane battery of setting up the electrode modification layer that constitutes from the bottom up of intrinsic amorphous silicon (i-a-Si:H) 6, n type amorphous silicon (n-a-Si:H) 7, the second electrode modification layer (ZAO) 8, back electrode aluminium film (Al) 9.
Described transparent substrates 1 adopts the glass or the flexible substrate of high transmission rate.
Transparency conducting layer 2 adopts the zinc oxide ZnO:B of boron-doping before described, and forms suede structure, and light passes by battery from it and absorbs, and serves as the electrode of battery again, requires transmitance height, good conductivity, adopts the method preparation of low-pressure chemical vapor deposition (LPCVD).Its thickness is 1000～2000nm.
The described first electrode modification layer 3 adopts amorphous germanium a-Ge:H, with the preparation of plasma reinforced chemical vapour deposition (PECVD) method, adopts GeH
4Transparency conducting layer TCO surface forms thin film before handling, and the modified anode interface reduces the anodic interface potential barrier, and its thickness is 2～10nm.
Described first Window layer 4 adopts p type microcrystal silicon P
+-μ c-Si:H as the window ground floor, increases Spectral matching property and stability, and its thickness is 2～20nm.
Described second Window layer 5 adopts p type noncrystalline silicon carbide p
+-a-SiC:H as the window second layer, utilizes broad-band gap to reduce optical absorption loss, improves short circuit current, and its thickness is 10～30nm.
Described intrinsic amorphous silicon 6 is amorphous silicon i-a-Si:H for the absorbed layer employing, and as light absorbing zone, its thickness is 200～400nm.
N type amorphous silicon 7 in the described pin structure adopts amorphous silicon n
+-a-Si:H, its thickness 10～30nm.
That the described second electrode modification layer 8 adopts is the zinc-oxide film ZAO that mixes aluminium, adopts sputtering method to form the embellishing cathode interface layer, is used to improve light utilization efficiency, and reduces the cathode interface potential barrier, protects battery simultaneously, and its thickness is 0.2～30nm.
Described back electrode aluminium film 9 adopts the aluminium film, adopts the method for continuous sputter, improves production capacity, and its thickness is 50～200nm.
The manufacture method of the amorphous silicon membrane battery of setting up the electrode modification layer of the utility model may further comprise the steps:
1, transparent substrates is cleaned: scrub, use 0.3% surfactant; Washing, processing procedure is, preceding feedwater 10s, draining 30s, the 90s that feeds water, totally twice, ultrasonic cleaning, frequency of ultrasonic is 35KHz, Rotary drying;
2, the preceding transparency conducting layer of low-pressure chemical vapor deposition (LPCVD) (TCO): preceding transparency conducting layer adopts the zinc oxide ZnO:B of boron-doping, diethyl zinc (C
2H
5)
2The Zn flow is that 10～15sccm and water vapor concentration flow are 12～20sccm, the B of doping
2H
6Concentration is 0.1～3%, and reaction pressure is 10～80Pa, and temperature is 100～400 ℃.
3, plasma reinforced chemical vapour deposition (PECVD) continuous vacuum coating: electrode modification layer a-Ge:H, adopt germane GeH
4Concentration 100%, pressure 150～180Pa, power 100～500W, 100～260 ℃ of temperature, Cement Composite Treated by Plasma 2～20min;
The first Window layer p
+-μ c-Si:H adopts borine B
2H
6, silane SiH
4, hydrogen H
2, high hydrogen thinner ratio H
2/ SiH
4=50～400, B
2H
6/ SiH
4=0.1～4, temperature is 110～260 ℃, power 100～260W;
The second Window layer p
+-a-SiC:H adopts silane SiH
4Concentration is 30～70%, hydrogen H
2Concentration is 20～50%, borine B
2H
6Concentration is 20～80%, methane CH
4Concentration is 10～70%, and temperature is 100～260 ℃, power 100～260W;
Intrinsic amorphous silicon i-a-Si:H adopts silane SiH
4Concentration is 70%, hydrogen H
2Concentration is 50%, 180～260 ℃ of underlayer temperatures, radio-frequency power 200～250W, growth air pressure 65～75Pa;
N type amorphous silicon n
+-a-Si:H adopts silane SiH
4Concentration is 40%, hydrogen H
2Concentration is 40%, phosphorus PH
3Concentration is 60%, 200～260 ℃ of underlayer temperatures, radio-frequency power 200～250W, growth air pressure 60～130Pa;
4, micro etch is cleaned: the micro etch cleaning condition is: million cleanings, circulation washing, micro etch, the ozone O that adopt 1.6MHz
3Water cleans, ultrasonic cleaning, and isopropyl alcohol is dry.Microetch is HF: NH
4F: H
2O=0.17: 17.10: 82.73, its effect was n
+The silica on a-Si top layer removes, in order to avoid O is used in loose contact again
3Surface after when water cleans forms the thin silica of one deck; After cleaning, substrate want the control time shorter, because surperficial that expose to the open air is n
+A-Si:H parks in air and can reoxidize, and the time was less than 20 minutes; Also do not carry out film forming like overtime, then need heavily wash;
5, the zinc-oxide film ZnO:Al of aluminium is mixed in sputter: base vacuum 10
-5Pa, argon flow amount are 10～60sccm, and sputtering pressure is 0.2～4.0Pa, and power is 10～200W, and temperature is room temperature～150 ℃, magnetic scanning number of times 1～5scan;
6, continuous sputter back electrode Al: the argon Ar flow is 40～60sccm, and sputtering pressure is 0.2～2.0Pa, and power is 1～10kW, and temperature is 220～260 ℃, magnetic scanning number of times 1～5scan;
7, after the processing, obtain finished product.
Table 1 shows the stationary value that the utility model is tested under reference condition: radiancy is 1000W/m
2, spectrum AM1.5; Temperature is 25 ℃.
Table 1
| Title | Embodiment 1 |
| Substrate size: | 635mm*1245mm*7mm |
| Cut size: | 100mm*100mm |
| The battery testing area: | 0.19625cm 2 |
| Firm power under the reference condition: | Wp＝1.62mW±5％ |
| Rated operational voltage: | 0.66V±5％ |
| Rated operational current: | 12.48mA/cm 2±5％ |
| Open circuit voltage: | 0.9V±5％ |
| Short circuit current: | 15.63mA/cm 2±5％ |
| Efficient: | 8.26％±5％ |
Table 2 is the photoelectric properties parameter of the utility model.
Table 2
Claims (10)
1. an amorphous silicon membrane battery of setting up the electrode modification layer is characterized in that: be by transparent substrates, preceding transparency conducting layer TCO, the first electrode modification layer a-Ge:H, the first Window layer p
+-μ c-Si:H, the second Window layer p
+-a-SiC:H, intrinsic amorphous silicon i-a-Si:H, n type amorphous silicon n
+-a-Si:H, the second electrode modification layer ZAO and back electrode aluminium film Al constitute from the bottom up.
2. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: described transparent substrates adopts the glass or the flexible substrate of high transmission rate.
3. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: transparency conducting layer adopts the zinc oxide of boron-doping before described, and forms suede structure, and its thickness is 1000～2000nm.
4. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: the described first electrode modification layer adopts amorphous germanium a-Ge:H, and its thickness is 2～10nm.
5. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: described first Window layer adopts p type microcrystal silicon p
+-μ c-Si:H, its thickness are 2～20nm.
6. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: described second Window layer adopts p type noncrystalline silicon carbide p
+-a-SiC:H, its thickness are 10～30nm.
7. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: that described intrinsic amorphous silicon is that absorbed layer adopts is amorphous silicon i-a-Si:H, and its thickness is 200～400nm.
8. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: the n type amorphous silicon in the described pin structure adopts amorphous silicon n
+-a-Si:H, its thickness 10～30nm.
9. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: what the described second electrode modification layer adopted is the zinc-oxide film of mixing aluminium, and its thickness is 0.2～30nm.
10. a kind of amorphous silicon membrane battery of setting up the electrode modification layer according to claim 1 is characterized in that: described back electrode aluminium film adopts the aluminium film of sputter, and its thickness is 50～200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205611554U CN202384348U (en) | 2011-12-29 | 2011-12-29 | Amorphous silicon thin-film battery added with electrode modified layers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205611554U CN202384348U (en) | 2011-12-29 | 2011-12-29 | Amorphous silicon thin-film battery added with electrode modified layers |
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| Publication Number | Publication Date |
|---|---|
| CN202384348U true CN202384348U (en) | 2012-08-15 |
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ID=46632830
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205611554U Expired - Fee Related CN202384348U (en) | 2011-12-29 | 2011-12-29 | Amorphous silicon thin-film battery added with electrode modified layers |
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| Country | Link |
|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972331A (en) * | 2013-02-06 | 2014-08-06 | 国际商业机器公司 | Buffer layer for high performing and low light degraded solar cells and method for forming same |
| CN104465894A (en) * | 2014-12-26 | 2015-03-25 | 浙江正泰太阳能科技有限公司 | Amorphous silicon membrane solar cell preparation method and amorphous silicon membrane solar cell |
-
2011
- 2011-12-29 CN CN2011205611554U patent/CN202384348U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972331A (en) * | 2013-02-06 | 2014-08-06 | 国际商业机器公司 | Buffer layer for high performing and low light degraded solar cells and method for forming same |
| CN104465894A (en) * | 2014-12-26 | 2015-03-25 | 浙江正泰太阳能科技有限公司 | Amorphous silicon membrane solar cell preparation method and amorphous silicon membrane solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20141229 |
|
| EXPY | Termination of patent right or utility model |