CN102044594A - Technology for improving diffusion uniformity of crystalline silicon solar battery - Google Patents
Technology for improving diffusion uniformity of crystalline silicon solar battery Download PDFInfo
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- CN102044594A CN102044594A CN2010105508483A CN201010550848A CN102044594A CN 102044594 A CN102044594 A CN 102044594A CN 2010105508483 A CN2010105508483 A CN 2010105508483A CN 201010550848 A CN201010550848 A CN 201010550848A CN 102044594 A CN102044594 A CN 102044594A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention belongs to the technical field of manufacturing a silicon solar battery, and particularly relates to a technology for improving the diffusion uniformity of the crystalline silicon solar battery. In the invention, the square resistance uniformity of a solar battery emitter is improved by adopting the method of early oxidation and then diffusion. The working procedure comprises the preparation of an oxide layer, the preparation of an emitter, and the removal of phosphorosilicate glass. By using the technology, the diffusion uniformity of the emitter is improved, the interstitial defect of the emitter is reduced, the utilization ratio of the shortwave section photon is improved, and the electrical property of the crystalline silicon solar battery is improved, and the crystalline silicon solar battery is prone to industrialized production.
Description
Technical field
The invention belongs to the manufacture technology field of crystal silicon solar batteries, be specifically related to a kind of technology that improves the crystal silicon solar energy battery diffusion uniformity.
Background technology
Along with the exhaustion of fossil energy, solar cell is developed fast as a kind of green energy resource.Crystal silicon solar energy battery becomes the main flow of present area of solar cell, how to reduce the cost of solar cell, and the efficient that improves solar cell becomes the emphasis of domestic and international crystal silicon solar energy battery research.
Emitter is as the key components of solar cell, and its doping content and the degree of depth directly influence the efficient of solar cell.In order further to improve the efficient of crystal silicon solar energy battery, the preparation of low square resistance emitter becomes the trend of industry at present, simultaneously the uniformity and the short wave response of emitter is also had higher requirement.Traditional diffusion technology; since silicon face without any protection handle the concentration of the diffuse source atom of zones of different, and the degree of depth that enters silicon substrate has nothing in common with each other; the probability that interstitial defect forms improves greatly, has reduced the utilance of crystal silicon cell to shortwave sunlight photon.
Summary of the invention
Purpose of the present invention is exactly the defective at above-mentioned existence, a kind of technology that improves the crystal silicon solar energy battery diffusion uniformity is provided, the method that spreads behind the initial oxidation is adopted in this invention, improve side's resistance uniformity of solar cell emitter, its operation comprises, the preparation of oxide layer, the preparation of emitter, phosphorosilicate glass is removed, improve the uniformity of emitter diffusion, reduced the interstitial defect of emitter, improved the utilance of short-wave band photon, improve the electrical property of crystal silicon solar energy battery, and be easy to suitability for industrialized production.
The present invention is a kind of diffusion technology of crystal silicon solar energy battery, and technical scheme is to comprise following processing step: the preparation of oxide layer, and the preparation of emitter, phosphorosilicate glass is removed.
Described oxide layer is silicon dioxide, and its thickness is at 5-10nm.
Diffusion technology concrete steps of the present invention are:
1. the preparation of oxide layer is put into diffusion furnace with silicon chip, under nitrogen protection, is warming up to 850-900 ℃, and aerating oxygen carries out oxidation to silicon face, and the time is about 1-3 minutes.
2. the preparation of emitter under the protection of nitrogen gas effect, is cooled to 800-850 ℃, and in silicon chip surface sedimentary phosphor source 5-15 minutes, anaerobic advanced 15 minutes then, and room temperature is reduced in nitrogen protection, finishes the preparation of emitter.
3. phosphorosilicate glass is removed.
Beneficial effect of the present invention is: operation of the present invention comprises, the preparation of oxide layer, and the preparation of emitter, phosphorosilicate glass is removed.The method that employing is spread behind the silicon chip surface initial oxidation, the preparation emitter.Compared with prior art, this diffusion technology has improved the uniformity of emitter side's resistance greatly, has reduced the concentration of emitter space defective.Adopt the crystal silicon solar energy battery of this prepared, have short wave response preferably, greatly reduce the recombination probability of the minority carrier of emitter region, can obtain higher open circuit voltage, short circuit current and fill factor, curve factor.Adopt the crystal silicon solar energy battery of prepared of the present invention, the experiment proved that its photoelectric conversion efficiency can reach 18.0-18.5%(monocrystaline silicon solar cell).
Description of drawings:
Figure 1 shows that the schematic diagram of emitter preparation of the present invention.
Among Fig. 1,1. diffuse source atom, 2. oxide layer, 3. emitter, 4. silicon chip.
Embodiment:
In order to understand the present invention better, describe technical scheme of the present invention in detail below in conjunction with accompanying drawing, but the present invention is not limited thereto.
The diffusion technology technical scheme of a kind of crystal silicon solar energy battery of the present invention is to comprise following processing step: the preparation of oxide layer 2, and the preparation of emitter 3, phosphorosilicate glass is removed.
Described oxide layer 2 is the silicon dioxide oxide layer, and its thickness is at 5-10nm.
Concrete steps are:
1. the preparation of oxide layer 2 is put into diffusion furnace with silicon chip 4, under nitrogen protection, is warming up to 850-900 ℃, and aerating oxygen carries out oxidation to silicon chip 4 surfaces, and the time is about 1-3 minutes.
2. the preparation of emitter 3 under the protection of nitrogen gas effect, is cooled to 800-850 ℃, and in silicon chip 4 surface deposition phosphorus sources 5-15 minutes, anaerobic advanced 15 minutes then, and diffuse source atom 1 enters silicon chip 4, and room temperature is reduced in nitrogen protection, finishes the preparation of emitter 3.
3. phosphorosilicate glass is removed.
With the monocrystalline silicon piece 4 after the making herbs into wool cleaning, put into tubular diffusion furnace, under the effect of nitrogen protection, be warming up to 860 ℃, aerating oxygen, flow are 1000sccm, time remaining 1.5 minutes forms the thick silicon dioxide oxide layers 2 of 7nm on silicon chip 4 surfaces; Under protection of nitrogen gas, be cooled to 830 ℃ then, spread phosphorus source deposition, the time is 7 minutes, and anaerobic advances 13 minutes then, and diffuse source atom 1 enters silicon chip 4, under protection of nitrogen gas, reduces to room temperature at last; Then silicon chip 4 is put into 10% HF solution and cleaned 6min, remove phosphorosilicate glass, obtain the silicon chip 4 that emitter 3 resistances are 65 ± 3 ohm/sq; Cleaned silicon chip 4 is carried out etching again, the coated with antireflection film, printing, technologies such as sintering obtain solar battery sheet, and its average light photoelectric transformation efficiency can reach 18.17%.
Claims (3)
1. a technology that improves the crystal silicon solar energy battery diffusion uniformity is characterized in that silicon chip carries out oxidation earlier before diffusion, and diffusion process comprises following processing step: the preparation of oxide layer, and the preparation of emitter, phosphorosilicate glass is removed.
2. a kind of technology that improves the crystal silicon solar energy battery diffusion uniformity according to claim 1 is characterized in that described oxide layer is silicon dioxide, and thickness is 5-10nm.
3. a kind of technology that improves the crystal silicon solar energy battery diffusion uniformity according to claim 1 is characterized in that the diffusion technology concrete steps are:
1. the preparation of oxide layer is put into diffusion furnace with silicon chip, under nitrogen protection, is warming up to 850-900 ℃, and aerating oxygen carries out oxidation to silicon face, and the time is about 1-3 minutes;
2. the preparation of emitter under the protection of nitrogen gas effect, is cooled to 800-850 ℃, and in silicon chip surface sedimentary phosphor source 5-15 minutes, anaerobic advanced 15 minutes then, and room temperature is reduced in nitrogen protection, finishes the preparation of emitter;
3. phosphorosilicate glass is removed.
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| CN2010105508483A CN102044594A (en) | 2010-11-19 | 2010-11-19 | Technology for improving diffusion uniformity of crystalline silicon solar battery |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544238A (en) * | 2012-03-06 | 2012-07-04 | 英利能源（中国）有限公司 | Multi-diffusion manufacturing method for polycrystalline silicon wafer |
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102856435A (en) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching |
| CN103094410A (en) * | 2011-11-08 | 2013-05-08 | 浚鑫科技股份有限公司 | Phosphorous diffusion control method used for solar cell silicon slices |
| CN103367521A (en) * | 2011-12-31 | 2013-10-23 | 英利能源（中国）有限公司 | Method for reducing dead layer of solar cell |
| CN104319308A (en) * | 2014-09-16 | 2015-01-28 | 上饶光电高科技有限公司 | Method for improving diffusion uniformity of crystalline silicon solar cell |
| CN104766906A (en) * | 2015-04-08 | 2015-07-08 | 常州时创能源科技有限公司 | Diffusion technology for crystalline silicon solar cell |
| CN107799613A (en) * | 2017-10-17 | 2018-03-13 | 张家港协鑫集成科技有限公司 | Nanometer suede polycrystal silicon cell laminated antireflection film and preparation method thereof and application |
| CN110265293A (en) * | 2019-05-24 | 2019-09-20 | 江苏润阳悦达光伏科技有限公司 | The P-N junction manufacture craft of solar battery |
| CN110752273A (en) * | 2019-10-30 | 2020-02-04 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103094410A (en) * | 2011-11-08 | 2013-05-08 | 浚鑫科技股份有限公司 | Phosphorous diffusion control method used for solar cell silicon slices |
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| CN103367521A (en) * | 2011-12-31 | 2013-10-23 | 英利能源（中国）有限公司 | Method for reducing dead layer of solar cell |
| CN102544238B (en) * | 2012-03-06 | 2014-05-07 | 英利能源（中国）有限公司 | Multi-diffusion manufacturing method for polycrystalline silicon wafer |
| CN102586884B (en) * | 2012-03-06 | 2015-09-09 | 英利能源（中国）有限公司 | The manufacture method of a kind of polysilicon silicon chip twice diffusion |
| CN102544238A (en) * | 2012-03-06 | 2012-07-04 | 英利能源（中国）有限公司 | Multi-diffusion manufacturing method for polycrystalline silicon wafer |
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102856435A (en) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching |
| CN104319308A (en) * | 2014-09-16 | 2015-01-28 | 上饶光电高科技有限公司 | Method for improving diffusion uniformity of crystalline silicon solar cell |
| CN104766906A (en) * | 2015-04-08 | 2015-07-08 | 常州时创能源科技有限公司 | Diffusion technology for crystalline silicon solar cell |
| CN107799613A (en) * | 2017-10-17 | 2018-03-13 | 张家港协鑫集成科技有限公司 | Nanometer suede polycrystal silicon cell laminated antireflection film and preparation method thereof and application |
| CN110265293A (en) * | 2019-05-24 | 2019-09-20 | 江苏润阳悦达光伏科技有限公司 | The P-N junction manufacture craft of solar battery |
| CN110752273A (en) * | 2019-10-30 | 2020-02-04 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
| CN110752273B (en) * | 2019-10-30 | 2022-07-01 | 无锡尚德太阳能电力有限公司 | Simplified back passivation battery process applied to polycrystalline silicon chip |
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Open date: 20110504 |