CN102856435A - Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching - Google Patents
Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching Download PDFInfo
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- CN102856435A CN102856435A CN2012103238135A CN201210323813A CN102856435A CN 102856435 A CN102856435 A CN 102856435A CN 2012103238135 A CN2012103238135 A CN 2012103238135A CN 201210323813 A CN201210323813 A CN 201210323813A CN 102856435 A CN102856435 A CN 102856435A
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Abstract
The invention discloses a diffusion method for improving sheet resistance uniformity after SE (selective emission) etching. The diffusion method is characterized in that a depositing and propelling process is divided into two steps; a large amount of pure nitrogen is continuously fed all through an integral diffusion process; and the integral process time keeps unchanged as compared with that in an original technical scheme. The integral process sequentially includes steps of boat feeding, heating, stabilizing, primary depositing, primary propelling, secondary depositing, secondary propelling, cooling and board discharging. The diffusion method has the advantages that concentration on a region from the surface of a silicon wafer to a PN junction is uniform, uniform etched sheet resistance can be kept after etching, and the problem of high fluctuation of series resistance is solved.
Description
Technical field
The present invention relates to the crystal silicon solar batteries sheet and make the field, relate in particular to the inhomogeneity method of diffusion of sheet resistance after a kind of SE of improvement etching.
Background technology
At present, the selective emitter technique of crystal silicon solar batteries sheet mainly comprises: making herbs into wool, and diffusion, selective emitter junction forms (ink-jet and etching process), PECVD and silk-screen printing technique.Wherein diffusing procedure prepares PN junction, and the SP-etch operation is mainly corroded non-ink-jet zone, forms shallow expansion district.In actual production process, junction depth is too shallow after the crystal silicon solar batteries sheet SP-etch corrosion, and surperficial junction depth is inhomogeneous, causes carving rear sheet resistance uniformity extreme difference, then causes in the unit for electrical property parameters of cell piece the series resistance fluctuation larger.
Summary of the invention
The purpose of this invention is to provide the inhomogeneity method of diffusion of sheet resistance after a kind of SE of improvement etching, solve sheet resistance uniformity and the larger problem of series resistance fluctuation after the etching.
The technical solution adopted in the present invention is for adopting phosphorus oxychloride liquid source diffusion technology to be optimized, use the method for two steps diffusion, make silicon chip surface form a more uniform concentration to the PN junction place, sheet resistance after also keeping after the etching carving uniformly; In the technical program, whole processing step is followed successively by: advance boat, heat up, stable, deposition-1 advances-1, and deposition-2 advances-2, and boat is moved back in cooling; To deposit and progradation was divided into for two steps and carries out; In the whole process, large nitrogen keeps passing into state always; The whole process time is compared with former technical scheme and remains unchanged.Specific embodiment is followed successively by in accordance with the following steps:
(1) will adopt through the silicon chip of cleaning and texturing back-to-back mode to place quartz boat, and be placed on diffusion furnace push away the boat purifying area, the temperature in the diffusion furnace boiler tube is increased to 830 ± 5 ℃, passes into large nitrogen, flow is 15 ± 5slm.
(2) advance the boat process, pass into oxygen and nitrogen, the flow of oxygen is 800 ± 200sccm, and the flow of large nitrogen is 15 ± 5slm, carries out simultaneously temperature-rise period, and it is 8 ± 1min that temperature-rise period needs the time, and temperature is controlled at 830 ± 5 ℃.
(3) enter stabilization process, oxygen flow is 400 ± 100sccm, and large nitrogen flow is 11 ± 4slm, and the duration is 5 ± 2min.
(4) enter deposition-1 process, pass into simultaneously the little nitrogen of large nitrogen, oxygen and the source of carrying, the flow of large nitrogen is 11 ± 4slm, and little nitrogen flow is 1200 ± 300sccm, and oxygen flow is 400 ± 100sccm, and the duration is 9 ± 5min.
(5) enter propelling-1 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 9 ± 4slm, and the flow of oxygen is 800 ± 200sccm, and stops to pass into little nitrogen, and the duration is 10 ± 5min.
(6) enter deposition-2 process, continuing to pass into large nitrogen flow is 11 ± 4slm, and the little nitrogen flow in the source of carrying is 1200 ± 300sccm, and the duration is 9 ± 5min.
(7) enter propelling-2 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 9 ± 4slm, and the flow of oxygen is 800 ± 200sccm, and stops to pass into little nitrogen, and the duration is 11 ± 5min.
(8) enter cooling procedure, continue to pass into large nitrogen, flow is 15 ± 5slm, guarantees remaining POCl
3Fully reaction consumes, and guarantees safety in production, to beginning in managing to lower the temperature approximately about 10 minutes, moves back at last boat, cooling, unloading piece process simultaneously.
The invention has the beneficial effects as follows to make silicon chip surface form a more uniform concentration to the PN junction place, sheet resistance after also keeping after the etching carving uniformly solves the larger problem of series resistance fluctuation.
Description of drawings
Fig. 1 is a kind of process chart that improves the inhomogeneity method of diffusion of sheet resistance after the SE etching provided by the invention
Embodiment
Below in conjunction with accompanying drawing to a kind of SE of improvement etching provided by the invention after the technical scheme of the inhomogeneity method of diffusion of sheet resistance be described in further detail.The present embodiment is to carry out under the process time of the integral body condition identical with former technical scheme.Embodiment is as follows:
(1) will adopt through the silicon chip of cleaning and texturing back-to-back mode to place quartz boat, and be placed on diffusion furnace push away the boat purifying area, the temperature in the diffusion furnace boiler tube is increased to 830 ± 2 ℃, passes into large nitrogen, flow is 15slm.
(2) advance the boat process, pass into oxygen and nitrogen, the flow of oxygen is 850sccm, and the flow of large nitrogen is 15slm, carries out simultaneously temperature-rise period, and temperature-rise period is 8min, and temperature is controlled at 830 ± 2 ℃.
(3) enter stabilization process, oxygen flow is 400sccm, and the flow of large nitrogen is 12slm, and the duration is 5min.
(4) enter deposition-1 process, pass into simultaneously the little nitrogen of large nitrogen, oxygen and the source of carrying, the flow of large nitrogen is 12slm, and little nitrogen flow is 1100sccm, and oxygen flow is 400sccm, and the duration is 8min.
(5) enter propelling-1 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 10slm, and the flow of oxygen is 850sccm, and stops to pass into little nitrogen, and the duration is 12min.
(6) enter deposition-2 process, continuing to pass into large nitrogen flow is 12slm, and the little nitrogen flow in the source of carrying is 1100sccm, and the duration is 8min.
(7) enter propelling-2 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 10slm, and the flow of oxygen is 850sccm, and stops to pass into little nitrogen, and the duration is 12min.
(8) enter cooling procedure, continue to pass into large nitrogen, flow is 15slm, to beginning in managing to lower the temperature approximately about 10 minutes, moves back at last boat, cooling, unloading piece process simultaneously.
The experimental result of this enforcement example is as shown in table 1, to the silicon chip after the employing technique scheme etching, respectively gets a point (2,3,4,5) on a point of Selection Center (1) and four limits apart from edge 1cm place.Adopt after the former technical scheme etching sheet resistance and inhomogeneity experimental result shown in table 2.The inhomogeneity computing formula of sheet resistance is as follows after the etching in the present embodiment:
Table 1 adopts and the invention provides sheet resistance and uniformity after the technical scheme etching
| Point 1 | Point 2 | Point 3 | Point 4 | Point 5 | U% | |
| Wafer 1 | 123 | 110 | 105 | 121 | 110 | 7.89% |
| Wafer 2 | 131 | 117 | 136 | 117 | 135 | 7.51% |
| Wafer 3 | 119 | 114 | 115 | 118 | 103 | 7.21% |
Sheet resistance and uniformity after the former technical scheme etching of table 2 employing
| Point 1 | Point 2 | Point 3 | Point 4 | Point 5 | U% | |
| Wafer 1 | 122 | 111 | 109 | 117 | 131 | 9.17% |
| Wafer 2 | 124 | 112 | 105 | 110 | 102 | 9.73% |
| Wafer 3 | 119 | 130 | 121 | 109 | 125 | 8.79% |
Can find out according to above-mentioned experimental data, adopt technical scheme etching provided by the invention after the inhomogeneity mean value of sheet resistance bring up to 7.54% by 9.23%, effectively improved sheet resistance homogeneity question after the etching.
Claims (9)
1. one kind is improved the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: for adopting phosphorus oxychloride liquid source diffusion technology to be optimized, use the method for two steps diffusion, make silicon chip surface form a more uniform concentration to the PN junction place, sheet resistance after also keeping after the etching carving uniformly; Whole processing step is followed successively by: advance boat, heat up, stable, deposition-1 advances-1, and deposition-2 advances-2, and boat is moved back in cooling; To deposit and progradation was divided into for two steps and carries out; In the whole process, large nitrogen keeps passing into state always; The whole process time is compared with former technical scheme and remains unchanged.
2. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: will adopt through the silicon chip of cleaning and texturing back-to-back mode to place quartz boat, and be placed on diffusion furnace push away the boat purifying area, temperature in the diffusion furnace boiler tube is increased to 830 ± 5 ℃, pass into large nitrogen, flow is 15 ± 5slm.
3. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: advance the boat process, pass into oxygen and nitrogen, the flow of oxygen is 800 ± 200sccm, the flow of large nitrogen is 15 ± 5slm, carry out simultaneously temperature-rise period, it is 8 ± 1min that temperature-rise period needs the time, and temperature is controlled at 830 ± 5 ℃.
4. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter stabilization process, oxygen flow is 400 ± 100sccm, and large nitrogen flow is 11 ± 4slm, and the duration is 5 ± 2min.
5. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter deposition-1 process, pass into simultaneously the little nitrogen of large nitrogen, oxygen and the source of carrying, the flow of large nitrogen is 11 ± 4slm, little nitrogen flow is 1200 ± 300sccm, oxygen flow is 400 ± 100sccm, and the duration is 9 ± 5min.
6. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter propelling-1 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 9 ± 4slm, the flow of oxygen is 800 ± 200sccm, and stops to pass into little nitrogen, and the duration is 10 ± 5min.
7. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter deposition-2 process, continuing to pass into large nitrogen flow is 11 ± 4slm, and the little nitrogen flow in the source of carrying is 1200 ± 300sccm, and the duration is 9 ± 5min.
8. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter propelling-2 process, continue to pass into large nitrogen and oxygen, the flow of large nitrogen is 9 ± 4slm, the flow of oxygen is 800 ± 200sccm, and stops to pass into little nitrogen, and the duration is 11 ± 5min.
9. according to claim 1ly improve the inhomogeneity method of diffusion of sheet resistance after the SE etching, it is characterized in that: enter cooling procedure, continue to pass into large nitrogen, flow is 15 ± 5slm, guarantees remaining POCl
3Fully reaction consumes, and guarantees safety in production, to beginning in managing to lower the temperature approximately about 10 minutes, moves back at last boat, cooling, unloading piece process simultaneously.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646999A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Phosphorus diffusion method for improving evenness of solar battery piece |
| CN104409403A (en) * | 2014-11-05 | 2015-03-11 | 江阴方艾机器人有限公司 | Quartz boat loading silicon chip technology for photovoltaic diffusion operation |
| CN104409339A (en) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | P diffusion method of silicon wafer and preparation method of solar cell |
| CN108010972A (en) * | 2017-11-09 | 2018-05-08 | 润峰电力有限公司 | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline |
| CN108511563A (en) * | 2018-06-11 | 2018-09-07 | 国家电投集团西安太阳能电力有限公司 | A kind of production method of PN junction |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100269483A1 (en) * | 2008-07-03 | 2010-10-28 | Andrea Novi | Ion propulsion emitter and method for the production thereof |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102044594A (en) * | 2010-11-19 | 2011-05-04 | 山东力诺太阳能电力股份有限公司 | Technology for improving diffusion uniformity of crystalline silicon solar battery |
| CN102097524A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for diffusing high sheet resistance of solar cells |
| CN102544238A (en) * | 2012-03-06 | 2012-07-04 | 英利能源（中国）有限公司 | Multi-diffusion manufacturing method for polycrystalline silicon wafer |
-
2012
- 2012-09-05 CN CN201210323813.5A patent/CN102856435B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100269483A1 (en) * | 2008-07-03 | 2010-10-28 | Andrea Novi | Ion propulsion emitter and method for the production thereof |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102097524A (en) * | 2010-09-28 | 2011-06-15 | 常州天合光能有限公司 | Method for diffusing high sheet resistance of solar cells |
| CN102044594A (en) * | 2010-11-19 | 2011-05-04 | 山东力诺太阳能电力股份有限公司 | Technology for improving diffusion uniformity of crystalline silicon solar battery |
| CN102544238A (en) * | 2012-03-06 | 2012-07-04 | 英利能源（中国）有限公司 | Multi-diffusion manufacturing method for polycrystalline silicon wafer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646999A (en) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | Phosphorus diffusion method for improving evenness of solar battery piece |
| CN104409403A (en) * | 2014-11-05 | 2015-03-11 | 江阴方艾机器人有限公司 | Quartz boat loading silicon chip technology for photovoltaic diffusion operation |
| CN104409339A (en) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | P diffusion method of silicon wafer and preparation method of solar cell |
| CN104409339B (en) * | 2014-11-12 | 2017-03-15 | 浙江晶科能源有限公司 | A kind of P method of diffusion of silicon chip and the preparation method of solaode |
| CN108010972A (en) * | 2017-11-09 | 2018-05-08 | 润峰电力有限公司 | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline |
| CN108511563A (en) * | 2018-06-11 | 2018-09-07 | 国家电投集团西安太阳能电力有限公司 | A kind of production method of PN junction |
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