CN108010972A - A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline - Google Patents
A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline Download PDFInfo
- Publication number
- CN108010972A CN108010972A CN201711095137.XA CN201711095137A CN108010972A CN 108010972 A CN108010972 A CN 108010972A CN 201711095137 A CN201711095137 A CN 201711095137A CN 108010972 A CN108010972 A CN 108010972A
- Authority
- CN
- China
- Prior art keywords
- nitrogen flow
- deposition process
- flow
- phosphorus source
- propulsion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 24
- 238000009792 diffusion process Methods 0.000 title claims abstract description 23
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 235000008216 herbs Nutrition 0.000 title claims abstract description 10
- 210000002268 wool Anatomy 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 61
- 238000005137 deposition process Methods 0.000 claims abstract description 43
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 38
- 239000011574 phosphorus Substances 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 238000004062 sedimentation Methods 0.000 claims abstract description 6
- 230000003197 catalytic effect Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000003486 chemical etching Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Catalysts (AREA)
Abstract
A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, suitable for the black silicon diffusion technique prepared using metal catalytic chemical etching method, promotes the second deposition second to promote technique using the first deposition first；Oxygen flow in first deposition process, which is more than, takes phosphorus source nitrogen flow；First propulsion promotes for anaerobic, and the big nitrogen flow in the first progradation is more than the big nitrogen flow in the first deposition process；Phosphorus source nitrogen flow of taking in second deposition process takes phosphorus source nitrogen flow more than in the first deposition process, big nitrogen flow in second deposition process is less than the big nitrogen flow in the first deposition process, and the temperature of the second deposition process is more than the temperature in the first deposition process；Second propulsion is oxygen-enriched propulsion；The first propulsion time is less than the first sedimentation time；The second propulsion time is more than the second sedimentation time, and the present invention effectively reduction photo-generated carrier is compound, increases silicon chip diffusion uniformity, lifts black silicon cell efficiency.
Description
Technical field
The present invention relates to a kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, the black silicon silicon chip of the polycrystalline may be utilized in fabricating too
Positive energy cell piece, belongs to area of solar cell.
Background technology
The preparation method of current black silicon is mainly the following：Laser ablation method, reactive ion etching method（RIE）And metal
Catalytic chemistry etching method（MCCE）, become larger by its specific surface area of black silicon made from these methods, surface is hole shape, is conducive to
Light is fallen into, increases the utilization rate to illumination, suede structure is illustrated in fig. 1 shown below.But the surface of hole shape is under producing line process conditions
Diffusion is more difficult, ties shallower after diffusion, and sheet resistance uniformity is poor, and when sintering easily burns, and source concentration is higher, hole shape
Surface texture make it that carrier is easily compound, and final obtained cell piece electric leakage is more serious, and efficiency is not obviously improved.
The content of the invention
It is an object of the invention to provide a kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, this method is not increasing expansion
On the premise of dissipating cost, the time of phosphorus source nitrogen flow and progradation is taken by adjusting, reaching reduces compound increase junction depth, from
And effectively realize silicon chip diffusion uniformity, increase silicon chip performance.
To achieve the above object, the present invention uses following technical scheme：
A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, is expanded suitable for the black silicon prepared using metal catalytic chemical etching method
Day labor skill, promotes the-the second deposition-the second to promote technique using the first deposition-the first；
Oxygen flow in first deposition process, which is more than, takes phosphorus source nitrogen flow, phosphorus oxychloride is fully reacted into five oxidations
Two phosphorus, avoid corrosion of the phosphorus pentachloride to silicon chip；
First propulsion promotes for anaerobic, and the participation reaction of oxygen is not required in progradation, and big in the first progradation
Nitrogen flow is more than the big nitrogen flow in the first deposition process, makes in full pressure condition in pipe, easy to the progress of propulsion；
Phosphorus source nitrogen flow of taking in second deposition process takes phosphorus source nitrogen flow, silicon chip more than in the first deposition process
Has there is the preliminary saturation of phosphorus doping in surface, and the amount of P elements is increased, produces more phosphorus, phosphorus has when being promoted easy to the later stage
Effect doping, pipe interior air-flow amount is certain, so that the big nitrogen flow in the second deposition process just will be less than in the first deposition process
Big nitrogen flow, the temperature of the second deposition process is more than the temperature in the first deposition process, the raising of temperature, special gas in accelerating tube
Reaction, lattice in silicon is opened, the further doping of edge phosphorus；
Second propulsion is oxygen-enriched propulsion, and atmosphere is stronger, phosphorus atoms is doped toward deeper direction；
The first propulsion time is less than the first sedimentation time；The second propulsion time is more than the second sedimentation time, time tune
The junction depth of diffusion is become larger after whole.
Preferably, in the first deposition process, it is 600 ~ 800 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 13.9slm,
Oxygen flow is 1300sccm, and temperature is 795 °C, deposition processes time 600s ~ 700s；
In the first progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, and oxygen flow is 0 sccm,
Temperature is 832 °C, promotes processing time 500s ~ 600s；
In second deposition process, it is 1500 ~ 1700 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 12.5slm, and oxygen flow is
1900sccm, temperature are 832 °C, deposition processes time 300s ~ 400s；
In second progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, oxygen flow 1900sccm,
Temperature is 839 °C, promotes processing time 500s ~ 600s.
Sheet resistance after being spread using method of diffusion of the present invention is can be controlled between 80 Ω/ ~ 100 Ω/.
The present invention operation principle be：1st, phosphorus source nitrogen flow is taken in deposition process by reducing, it is dense reduces phosphorus source doping
It is compound that degree can reduce photo-generated carrier；And reduce phosphorus source surface concentration and add oxygen flow accounting indirectly so that surface
Oxide layer is more uniform, and phosphorus can be uniformly spread in silicon chip, improves the uniformity of crystal silicon chip after diffusion.2nd, increasing is passed through
Add the second step progradation process time, adjust sheet resistance after diffusion, make diffusion evenly, increase junction depth, so as to obtain low surface
Concentration spreads the good black silicon silicon chip of polycrystalline, and effectively reduction photo-generated carrier is compound, increases silicon chip diffusion uniformity, and lifting is black
Silicon cell efficiency.
The black silicon silicon chip sheet resistance of polycrystalline spread by the present invention is controllable, and uniformity is good with electrical property, it is demonstrated experimentally that relatively
In existing process（Comparative example 1 and 2）, black silicon cell made from the method for diffusion, open-circuit voltage lifts 1 ~ 2 mV, short-circuit electric
Stream 50 ~ 70 mA of lifting, improved efficiency 0.1% ~ 0.15%, works well, refers to（Table one）.
（Table one）.
Brief description of the drawings
To be described further to this patent, the method for this patent and the technique effect of generation are made below with reference to attached drawing
Further illustrate, to be fully understood from the purpose of this patent, feature and effect.
Fig. 1 show black silicon matte SEM photograph after MCCE making herbs into wool.
Fig. 2 show the black silicon cell of the invention prepared and the efficiency distribution figure of comparative example.
Embodiment
Embodiment 1：A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, suitable for using metal catalytic chemical etching method
The black silicon diffusion technique prepared：
In first deposition process, it is 600 ~ 800 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 13.9slm, and oxygen flow is
1300sccm, temperature are 795 °C, deposition processes time 600s ~ 700s；
In the first progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, and oxygen flow is 0 sccm,
Temperature is 832 °C, promotes processing time 500s ~ 600s；
In second deposition process, it is 1500 ~ 1700 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 12.5slm, and oxygen flow is
1900sccm, temperature are 832 °C, deposition processes time 300s ~ 400s；
In second progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, oxygen flow 1900sccm,
Temperature is 839 °C, promotes processing time 500s ~ 600s.
For remarkable result caused by fully showing this case patent, comparative example is set forth below.
Comparative example 1：Promote, comprise the following steps including two steps deposition and a step：
（1）In first step deposition process, it is 1000 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 13.9slm, oxygen flow
For 400sccm, temperature is 795 °C, deposition processes time 660s；
（2）In second step deposition process, it is 1000 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 12.5slm, oxygen flow
For 400sccm, temperature is 832 °C, deposition processes time 460s；
（3）In progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, oxygen flow 1900sccm,
Temperature is 839 °C, promotes processing time 300s.
Comparative example 2：Promote, comprise the following steps including two steps deposition and two steps；
（1）In first step deposition process, it is 2200 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 23slm, and oxygen flow is
2200sccm, temperature are 795 °C, deposition processes time 1200s；
（2）In the first progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, and oxygen flow is
1900sccm, temperature are 839 °C, promote processing time 300s；
（3）In second step deposition process, it is 1000 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 12.5slm, oxygen flow
For 400sccm, temperature is 832 °C, deposition processes time 680s；
（4）In the first progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, and oxygen flow is
1900sccm, temperature are 839 °C, promote processing time 300s.
As shown in Fig. 2, 1 black silicon cell of embodiment is significantly improved compared to comparative example 1 and 2 efficiency of comparative example, and efficiency
Distribution is more concentrated.
It is clear that the implementation demonstration example of this patent is the foregoing described, it is any in technique provided by the present invention or principle
Simple modifications belong to the protection domain of this patent.
Claims (2)
- A kind of 1. black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline, suitable for the black silicon prepared using metal catalytic chemical etching method Diffusion technique, it is characterised in that promote the-the second deposition-the second to promote technique using the first deposition-the first；Oxygen flow in first deposition process, which is more than, takes phosphorus source nitrogen flow；First propulsion promotes for anaerobic, and the big nitrogen flow in the first progradation is more than the big nitrogen in the first deposition process Flow；Phosphorus source nitrogen flow of taking in second deposition process takes phosphorus source nitrogen flow more than in the first deposition process, and second Big nitrogen flow in deposition process is less than the big nitrogen flow in the first deposition process, and the temperature of the second deposition process is more than first and sinks Temperature during product；Second propulsion is oxygen-enriched propulsion；The first propulsion time is less than the first sedimentation time；The second propulsion time is more than the second sedimentation time.
- 2. the black silicon silicon chip method of diffusion of a kind of MCCE making herbs into wool polycrystalline according to claim 1, it is characterised in that heavy first During product, it is 600 ~ 800 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 13.9slm, oxygen flow 1300sccm, temperature For 795 °C, deposition processes time 600s ~ 700s；In the first progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, and oxygen flow is 0 sccm, Temperature is 832 °C, promotes processing time 500s ~ 600s；In second deposition process, it is 1500 ~ 1700 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 12.5slm, and oxygen flow is 1900sccm, temperature are 832 °C, deposition processes time 300s ~ 400s；In second progradation, it is 0 sccm to take phosphorus source nitrogen flow, and big nitrogen flow is 16 slm, oxygen flow 1900sccm, Temperature is 839 °C, promotes processing time 500s ~ 600s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711095137.XA CN108010972A (en) | 2017-11-09 | 2017-11-09 | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711095137.XA CN108010972A (en) | 2017-11-09 | 2017-11-09 | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108010972A true CN108010972A (en) | 2018-05-08 |
Family
ID=62052174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711095137.XA Pending CN108010972A (en) | 2017-11-09 | 2017-11-09 | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108010972A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766874A (en) * | 2018-06-07 | 2018-11-06 | 通威太阳能（安徽）有限公司 | A kind of diffusion technique that can increase minority carrier life time and improve transfer efficiency |
| CN109148648A (en) * | 2018-09-30 | 2019-01-04 | 浙江晶科能源有限公司 | A kind of preparation method and black silicon solar cell of black silicon solar cell |
| CN109545673A (en) * | 2018-10-12 | 2019-03-29 | 南昌大学 | A kind of crystal-silicon solar cell anaerobic method of diffusion |
| CN109713056A (en) * | 2018-12-04 | 2019-05-03 | 上海交通大学 | A kind of black silicon solar cell preparation method with radial PN junction |
| CN110718604A (en) * | 2018-06-26 | 2020-01-21 | 上海硅洋新能源科技有限公司 | Back surface field of P-type crystalline silicon solar cell and back passivation layer preparation method |
| CN112652678A (en) * | 2020-12-09 | 2021-04-13 | 晋能清洁能源科技股份公司 | Polycrystalline variable-temperature deposition diffusion method and application thereof |
| CN113964239A (en) * | 2021-10-18 | 2022-01-21 | 横店集团东磁股份有限公司 | Low-voltage diffusion process of solar single crystal PERC |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856435A (en) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching |
| CN105185870A (en) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | Phosphorus gettering technology for silicon chips |
| CN106057980A (en) * | 2016-08-03 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN106206267A (en) * | 2016-07-26 | 2016-12-07 | 润峰电力有限公司 | A kind of crystal silicon chip method for diffusing high sheet resistance |
| CN107086176A (en) * | 2017-04-20 | 2017-08-22 | 通威太阳能（合肥）有限公司 | The low surface concentration of one kind diffusion puies forward effect technique |
-
2017
- 2017-11-09 CN CN201711095137.XA patent/CN108010972A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856435A (en) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Diffusion method for improving sheet resistance uniformity after SE (selective emission) etching |
| CN105185870A (en) * | 2015-09-17 | 2015-12-23 | 江西展宇新能源股份有限公司 | Phosphorus gettering technology for silicon chips |
| CN106206267A (en) * | 2016-07-26 | 2016-12-07 | 润峰电力有限公司 | A kind of crystal silicon chip method for diffusing high sheet resistance |
| CN106057980A (en) * | 2016-08-03 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method of crystalline silicon solar cell |
| CN107086176A (en) * | 2017-04-20 | 2017-08-22 | 通威太阳能（合肥）有限公司 | The low surface concentration of one kind diffusion puies forward effect technique |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766874A (en) * | 2018-06-07 | 2018-11-06 | 通威太阳能（安徽）有限公司 | A kind of diffusion technique that can increase minority carrier life time and improve transfer efficiency |
| CN110718604A (en) * | 2018-06-26 | 2020-01-21 | 上海硅洋新能源科技有限公司 | Back surface field of P-type crystalline silicon solar cell and back passivation layer preparation method |
| CN109148648A (en) * | 2018-09-30 | 2019-01-04 | 浙江晶科能源有限公司 | A kind of preparation method and black silicon solar cell of black silicon solar cell |
| CN109148648B (en) * | 2018-09-30 | 2021-01-08 | 浙江晶科能源有限公司 | Preparation method of black silicon solar cell and black silicon solar cell |
| CN109545673A (en) * | 2018-10-12 | 2019-03-29 | 南昌大学 | A kind of crystal-silicon solar cell anaerobic method of diffusion |
| CN109545673B (en) * | 2018-10-12 | 2022-01-11 | 南昌大学 | Oxygen-free diffusion method for crystalline silicon solar cell |
| CN109713056A (en) * | 2018-12-04 | 2019-05-03 | 上海交通大学 | A kind of black silicon solar cell preparation method with radial PN junction |
| CN112652678A (en) * | 2020-12-09 | 2021-04-13 | 晋能清洁能源科技股份公司 | Polycrystalline variable-temperature deposition diffusion method and application thereof |
| CN113964239A (en) * | 2021-10-18 | 2022-01-21 | 横店集团东磁股份有限公司 | Low-voltage diffusion process of solar single crystal PERC |
| CN113964239B (en) * | 2021-10-18 | 2023-07-21 | 横店集团东磁股份有限公司 | Low-pressure diffusion process of solar monocrystalline PERC |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108010972A (en) | A kind of black silicon silicon chip method of diffusion of MCCE making herbs into wool polycrystalline | |
| CN106057980B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN101937940B (en) | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method | |
| CN110473926A (en) | A kind of passivation contact solar cell and preparation method thereof | |
| CN102820383B (en) | Spread method of polycrystalline silicon solar cell | |
| CN105895738A (en) | Passivated contact N-type solar cell, preparation method, assembly and system | |
| CN105780127B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN103094419B (en) | Preparation method of high-efficiency solar cell | |
| CN105304753A (en) | N-type cell boron diffusion technology | |
| CN107591461A (en) | A kind of diffusion technique for preparing solar cell | |
| CN102005501A (en) | Phosphorous diffusion method for producing solar cell | |
| CN106856215A (en) | Solar battery sheet method of diffusion | |
| CN104882516A (en) | High-temperature low-pressure method for silicon wafer diffusion | |
| CN115332366A (en) | Back passivation contact heterojunction solar cell and preparation method thereof | |
| CN102130211B (en) | Method for improving surface diffusion of solar cell | |
| CN113604791A (en) | Based on BCl3Horizontal coating method for gas LPCVD boron-doped amorphous silicon and application | |
| CN102925982B (en) | Solar cell and diffusion method of solar cell | |
| CN102544238B (en) | Multi-diffusion manufacturing method for polycrystalline silicon wafer | |
| CN104538485A (en) | Preparation method of double-sided battery | |
| CN106340567B (en) | A kind of Liang Bu TongYuans technique that pressure is opened applied to solar cell lifting | |
| CN105118896A (en) | Warming junction-pushing diffusion technology | |
| CN102569532A (en) | Secondary deposition and dispersion process for selective emitter battery | |
| TW201533921A (en) | Silicon solar cells with epitaxial emitters | |
| WO2015130334A1 (en) | Silicon solar cells with epitaxial emitters | |
| CN109860334A (en) | A kind of matching HF/HNO3The high quality phosphorus diffusion method of system selective etch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20200211 |
|
| AD01 | Patent right deemed abandoned |