CN102623556A - Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization - Google Patents
Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization Download PDFInfo
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- CN102623556A CN102623556A CN2012100838861A CN201210083886A CN102623556A CN 102623556 A CN102623556 A CN 102623556A CN 2012100838861 A CN2012100838861 A CN 2012100838861A CN 201210083886 A CN201210083886 A CN 201210083886A CN 102623556 A CN102623556 A CN 102623556A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention belongs to the technical field of manufacturing of crystal silicon solar cells, and in particular relates to a technology for preparing an emitting electrode without a dead layer by adopting an alkaline method and texturization. The emitting electrode without the dead layer and excellent performance is prepared by adopting a diffusion and texturization method; and by the technology, a dead layer emitting electrode region on the surface of a cell sheet can be effectively removed, the short wave response of the solar cell is improved, dark current is reduced, the open-circuit voltage of the cell sheet is effectively improved, and industrialized production is facilitated.
Description
Technical field
The invention belongs to the manufacture technology field of crystal silicon solar energy battery, be specifically related to the preparation technology that making herbs into wool behind a kind of alkaline process does not have the dead layer emitter.
Background technology
Along with the exhaustion of fossil energy, solar cell is developed as a kind of green energy resource fast.Crystal silicon solar energy battery becomes the main flow of present area of solar cell, how to reduce the cost of solar cell, and the efficient that improves solar cell becomes the emphasis of domestic and international crystal silicon solar energy battery research.
Emitter is as the key components of solar cell, and its surface doping concentration directly influences the efficient of solar cell.Because work as doping content greater than 10
20/ cm
3The time, will become the dead layer district, therefore, through reducing the doping content of emitter surface, improve of the response of battery sheet, and reduce dark current short-wave band, improve open circuit voltage, become the main method of present raising battery efficiency.Yet the preparation of traditional emitter, the doping content of silicon chip surface all is higher than 10
20/ cm
3, therefore the surface can form the dead layer district of tens nanometers, influences the efficient of battery.
Summary of the invention
The object of the invention is exactly the defective to above-mentioned existence, provides making herbs into wool behind a kind of alkaline process not have the preparation technology of dead layer emitter, and the method for diffusion back making herbs into wool is earlier adopted in this invention; Preparation has the no dead layer emitter of premium properties, and its concrete operation comprises, the removal of affected layer; The low square resistance diffusion; The silex glass that will contain doped source is removed, and highly doped dead layer emitter region is removed in surperficial alkali making herbs into wool simultaneously, cleans.The present invention can remove the dead layer emitter region on battery sheet surface effectively, improves the short wave response of solar cell, reduces dark current, effectively improves the open circuit voltage of battery sheet, and is easy to suitability for industrialized production.
Technical scheme of the present invention is: making herbs into wool does not have the preparation technology of dead layer emitter behind a kind of alkaline process, may further comprise the steps:
(1) removal of affected layer: silicon chip is put into temperature be 50-95 ℃, concentration is in the NaOH solution of 100-200g/L, soaks 10-50s;
(2) low square resistance diffusion: silicon chip is put into diffusion furnace, and spreading the preparation low square resistance is the emitter of 0-20ohm/sq;
(3) remove the silex glass that contains doped source: employing concentration is 5%-15% HF acid solution cleaning silicon chip, and the junction depth of preparation is 1000-8000nm emitter;
(4) highly doped dead layer emitter region is removed in surperficial alkali making herbs into wool simultaneously: silicon chip is put into NaOH and IPA mixed solution, accomplish surface wool manufacturing, remove the dead layer emitter region of silicon chip surface simultaneously, the resistance of preparation side is the no dead layer emitter of 50-150ohm/sq; The temperature of described NaOH and IPA solution is 50-95 ℃, and wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L.
(5) clean: will remove the silicon chip of dead layer emitter, and put into concentration and be 5-15% HCl and concentration and be 2%-10% the sour mixed solution of HF and cleaned 0.5-5 minutes, after the cleaning, the doping content of no dead layer emitter surface is lower than 10
20/ cm
3
Described silicon chip is monocrystalline or type monocrystalline silicon.
Beneficial effect of the present invention is: making herbs into wool does not have the preparation technology of dead layer emitter behind a kind of alkaline process of the present invention, adopts the method for diffusion back making herbs into wool earlier, and preparation has the no dead layer emitter of premium properties; Its concrete operation comprises; The removal of affected layer, the low square resistance diffusion, the silex glass that will contain doped source is removed; Highly doped dead layer emitter region is removed in surface alkali making herbs into wool simultaneously, cleans.The present invention is applied to monocrystalline silicon or type monocrystalline silicon, can remove the dead layer emitter region on battery sheet surface effectively, more up hill and dale gettering and removal dead layer dead layer; Improve the short wave response of solar cell; Reduce dark current, effectively improve the open circuit voltage of battery sheet, and be easy to suitability for industrialized production.
Description of drawings:
Shown in Figure 1 is crystalline silicon conventional diffusion structural representation;
Shown in Figure 2 do not have dead layer emitter structure sketch map for the present invention;
Among the figure, 1. diffuse source atom 2. contains the silex glass of doped source, and 3. the dead layer emitter does not 4. have the dead layer emitter, 5. silicon chip.
Embodiment:
In order to understand the present invention better, specify technical scheme of the present invention below in conjunction with accompanying drawing, but the present invention is not limited thereto.
The present invention is that the preparation technology that making herbs into wool does not have a dead layer emitter behind a kind of alkaline process comprises following processing step: the removal of affected layer, and the low square resistance diffusion, the silex glass 2 that will contain doped source is removed, and highly doped dead layer emitter 3 districts are removed in surperficial alkali making herbs into wool simultaneously, cleaning.
Concrete steps are:
(1) removal of affected layer: silicon chip 5 is put into temperature be 50-95 ℃, concentration is in the NaOH solution of 100-200g/L, soaks 10-50s;
(2) low square resistance diffusion: silicon chip 5 is put into diffusion furnace, and spreading the preparation low square resistance is the emitter of 0-20ohm/sq;
(3) remove the silex glass 2 that contains doped source: employing concentration is 5%-15% HF acid solution cleaning silicon chip 5, and the junction depth of preparation is 1000-8000nm emitter;
(4) highly doped dead layer emitter 3 districts are removed in surperficial alkali making herbs into wool simultaneously: silicon chip 5 is put into NaOH and IPA mixed solution; Accomplish surface wool manufacturing; Remove dead layer emitter 3 districts on silicon chip 5 surfaces simultaneously, the resistance of preparation side is the no dead layer emitter 4 of 50-150ohm/sq; The temperature of described NaOH and IPA solution is 50-95 ℃, and wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L;
(5) clean: will remove the silicon chip 5 of dead layer emitter 3, and put into concentration and be 5-15% HCl and concentration and be 2%-10% HF acid mixed solution and cleaned 0.5-5 minutes, after the cleaning, no dead layer emitter 4 surperficial doping contents are lower than 10
20/ cm
3
Described silicon chip 5 is monocrystalline or type monocrystalline silicon.
With p type single crystal silicon sheet 5, putting into temperature is 80 ℃, and concentration is in the NaOH solution of 180g/L, soaks 20s, removes the affected layer on silicon chip 5 surfaces; Then silicon chip 5 is put into the conventional diffusion stove, carry out conventional diffusion, be 6h diffusion time, and the side's of preparing resistance is the emitter of 8ohm/sq; Employing concentration is 10% HF acid solution, removes the silex glass that contains doped source 2 of silicon chip surface; With the silicon chip 5 of removing the silex glass 2 that contains doped source; Put into the IPA mixed solution that NaOH that concentration is 5g/L and concentration are 150g/L, accomplish surface wool manufacturing, the time is 1000s; Remove dead layer emitter 3 simultaneously, the side's resistance that obtains not having silicon chip 5 surfaces of dead layer emitter 4 this moment is 78ohm/sq; Putting into concentration then and be 5% HCl and concentration and be 7% HF acid mixed solution cleaned 5 minutes.Silicon chip 5 is accomplished edge isolation successively then, the antireflective coating deposition, and printing, technologies such as sintering obtain solar battery sheet, and its average light photoelectric transformation efficiency can reach 18.47%.
With P type class monocrystalline silicon piece 5, putting into temperature is 80 ℃, and concentration is in the NaOH solution of 180g/L, soaks 20s, removes the affected layer on silicon chip 5 surfaces; Then silicon chip 5 is put into the conventional diffusion stove, carry out conventional diffusion, be 5.5h diffusion time, and the side's of preparing resistance is the emitter of 10ohm/sq; Employing concentration is 10% HF acid solution, removes the silex glass that contains doped source 2 of silicon chip surface; With the silicon chip 5 of removing the silex glass 2 that contains doped source; Put into the IPA mixed solution that NaOH that concentration is 5g/L and concentration are 150g/L, accomplish surface wool manufacturing, the time is 940s; Remove dead layer emitter 3 simultaneously, the side's resistance that obtains not having silicon chip 5 surfaces of dead layer emitter 4 this moment is 83ohm/sq; Putting into concentration then and be 5% HCl and concentration and be 7% HF acid mixed solution cleaned 5 minutes.Silicon chip 5 is accomplished edge isolation successively then, the antireflective coating deposition, and printing, technologies such as sintering obtain solar battery sheet, and its average light photoelectric transformation efficiency can reach 18.24%.
Claims (3)
1. making herbs into wool does not have the preparation technology of dead layer emitter behind the alkaline process, it is characterized in that, may further comprise the steps:
(1) removal of affected layer: silicon chip is put into temperature be 50-95 ℃, concentration is in the NaOH solution of 100-200g/L, soaks 10-50s;
(2) low square resistance diffusion: silicon chip is put into diffusion furnace, and spreading the preparation low square resistance is the emitter of 0-20ohm/sq;
(3) remove the silex glass that contains doped source: employing concentration is 5%-15% HF acid solution cleaning silicon chip, and the junction depth of preparation is 1000-8000nm emitter;
(4) highly doped dead layer emitter region is removed in surperficial alkali making herbs into wool simultaneously: silicon chip is put into NaOH and IPA mixed solution, accomplish surface wool manufacturing, remove the dead layer emitter region of silicon chip surface simultaneously, the resistance of preparation side is the no dead layer emitter of 50-150ohm/sq;
(5) clean: will remove the silicon chip of dead layer, and put into concentration and be 5-15% HCl and concentration and be 2%-10% the sour mixed solution of HF and cleaned 0.5-5 minutes.
2. making herbs into wool does not have the preparation technology of dead layer emitter behind the alkaline process according to claim 1; It is characterized in that in the described step 4), the temperature of described NaOH and IPA solution is 50-95 ℃; Wherein the concentration of NaOH is 0-200g/L, and the concentration of IPA is 0-800g/L.
3. making herbs into wool does not have the preparation technology of dead layer emitter behind the alkaline process according to claim 1, it is characterized in that, described silicon chip is monocrystalline silicon or type monocrystalline silicon.
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| CN2012100838861A CN102623556A (en) | 2012-03-27 | 2012-03-27 | Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489712A (en) * | 2016-02-01 | 2016-04-13 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of N-type back-junction solar cell |
| CN109545660A (en) * | 2018-11-13 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | Method for cleaning silicon wafer used by solar cell |
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| CN101814547A (en) * | 2009-02-19 | 2010-08-25 | 上海交大泰阳绿色能源有限公司 | Method for preparing selective emitter crystalline silicon solar cell |
| CN102064216A (en) * | 2010-11-22 | 2011-05-18 | 晶澳（扬州）太阳能科技有限公司 | Novel crystalline silicon solar cell and manufacturing method thereof |
| CN102122685A (en) * | 2011-01-27 | 2011-07-13 | 中山大学 | Method for preparing crystalline silicon solar battery having emitter wrapping structure |
| CN102487105A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Method for preparing high-efficiency solar cell with three-dimensional structure |
-
2012
- 2012-03-27 CN CN2012100838861A patent/CN102623556A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814547A (en) * | 2009-02-19 | 2010-08-25 | 上海交大泰阳绿色能源有限公司 | Method for preparing selective emitter crystalline silicon solar cell |
| CN102064216A (en) * | 2010-11-22 | 2011-05-18 | 晶澳（扬州）太阳能科技有限公司 | Novel crystalline silicon solar cell and manufacturing method thereof |
| CN102487105A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Method for preparing high-efficiency solar cell with three-dimensional structure |
| CN102122685A (en) * | 2011-01-27 | 2011-07-13 | 中山大学 | Method for preparing crystalline silicon solar battery having emitter wrapping structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489712A (en) * | 2016-02-01 | 2016-04-13 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of N-type back-junction solar cell |
| CN109545660A (en) * | 2018-11-13 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | Method for cleaning silicon wafer used by solar cell |
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Application publication date: 20120801 |