CN102034897B - Aging device and method for electrically attenuating crystalline silicon solar cells - Google Patents
Aging device and method for electrically attenuating crystalline silicon solar cells Download PDFInfo
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- CN102034897B CN102034897B CN2010105076579A CN201010507657A CN102034897B CN 102034897 B CN102034897 B CN 102034897B CN 2010105076579 A CN2010105076579 A CN 2010105076579A CN 201010507657 A CN201010507657 A CN 201010507657A CN 102034897 B CN102034897 B CN 102034897B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses an aging device and method for electrically attenuating crystalline silicon solar cells. The device comprises a power source, a bracket, an upper conducting plate and a lower conducting plate which are arranged on the bracket and a driving device, wherein the upper conducting plate and the lower conducting plate are opposite to each other up and down; one conducting plate is fixedly connected with the bracket; the other conducting plate is connected with the output end of the driving device; and the upper conducting plate and the lower conducting plate are respectively connected with the power source by conductors. The aging device can realize early attenuation of the cells by utilizing the principle of electric attenuation and realize application of early attenuation of the cells on the industrial production lines.
Description
Technical field
The present invention relates to a kind of crystal silicon solar cell sheet electricity induced attenuation aging equipment and aging method, belong to solar silicon cell manufacturing technology field.
Background technology
At present, solar cell mainly comprises two kinds of crystal silicon cell and hull cells, but in the majority with crystal-silicon solar cell; Wherein, with the crystal silicon solar energy battery of boron doped P type silicon wafer fabrication in photovoltaic market always in occupation of leading position.
Yet for boron doped solar cell, when it is exposed under the illumination or injects charge carrier in the dark, its battery performance can be decayed (promptly have usually 1～5% photic power attenuation), and finally reaches a stable efficient.Its reason is silicon materials displacement boron and interstitial oxygen concentration form the metastable state deep energy level under the situation of illumination or charge carrier injection a defective complex, has reduced minority carrier life time, causes the reduction of battery efficiency.
This shows that the size of crystal silicon solar batteries photo attenuation is relevant with the content of boron oxygen in the silicon wafer.Yet; Because the quality of silicon materials is very different; Crystal silicon ingot (rod) when growth boron oxygen segregation coefficient is also variant, therefore comes from the silicon wafer of different crystal bars (ingot) and comes from same crystal bar (ingot) but have different boron oxygen contents usually at the silicon wafer of diverse location; And the crystal silicon cell assembly is generally processed by tens silicon cells (as 48～72) series connection, and tens silicon cell photo attenuation amplitudes there are differences, and its component power is limited by the maximum battery sheet of decay, causes whole component power output to reduce; Simultaneously, this assembly also can cause problems such as local pyrexia because of the mismatch of each battery sheet power.
At present, battery sheet producer does not also have effectively practical method that the battery sheet is classified by the photo attenuation amplitude.Because the early stage photo attenuation of battery sheet needs about 20 hours time to accomplish usually, and require conditions such as irradiation uniformity of light, irradiation space and battery sheet good heat radiating, thereby can't on the product line of battery sheet in enormous quantities, really realize.
Summary of the invention
The object of the invention provides a kind of crystal silicon solar cell sheet electricity induced attenuation aging equipment and aging method, to realize the suitability for industrialized production of the early stage decay of battery sheet.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of crystal silicon solar cell sheet electricity induced attenuation aging equipment, and comprise power supply, support, be located at last conductive plate and lower conducting plate on the support, and drive unit; Said upward conductive plate and lower conducting plate are oppositely arranged up and down, and one of them conductive plate is fixedly connected with support, and another conductive plate is connected with the output of said drive unit;
The said conductive plate of going up is connected with power supply through lead respectively with lower conducting plate.
Device of the present invention can be applied on the crystal silicon solar cell sheet production line.This device can cooperate control system to realize automation mechanized operation, and realizes mass production through the device that is set up in parallel many playscript with stage directions inventions.
In the technique scheme, said lower conducting plate is fixedly connected with support, and last conductive plate is connected with the output of said drive unit.Lower conducting plate is fixedly arranged on the support, and last conductive plate is connected with the output of drive unit, thus make conductive plate relatively lower conducting plate move up and down, compress or decontrol by the range upon range of battery sheet group of forming of multi-disc battery sheet.
Further technical scheme also is provided with fan on the said support, and the air outlet of fan is between upper and lower conductive plate.Action of fan is to carry out air-cooled to battery sheet group in the energising.
Further technical scheme, said upward conductive plate and lower conducting plate all are copper coins.
In the technique scheme, also be provided with positioning element on the said support, positioning element around be located at lower conducting plate around.The effect of positioning element is that battery sheet group is positioned on the lower conducting plate, prevents its staggered floor up and down.
The present invention asks for protection a kind of crystal silicon solar cell sheet electricity induced attenuation aging method simultaneously, comprises the steps:
(1) it is stacked together in proper order at least 2 crystal silicon solar cells to be pressed positive-negative polarity, forms battery sheet group;
(2) the battery sheet group with step (1) feeds DC Forward Current, and be at least 30 minutes conduction time, current density 2.05～20.55mA/cm
2
In the preceding text, it is stacked together in proper order in the said step (1) solar battery sheet to be pressed positive-negative polarity, is meant multi-disc battery sheet is discharged in order, and the negative pole contact of last a slice battery sheet is the positive pole of a slice battery sheet down.
Operation principle of the present invention is following: when giving the in addition certain forward bias of crystal silicon cell sheet; Inject electronics and obtain certain energy; This electronics with certain energy also can be given B or O NE BY ENERGY TRANSFER through collision in the battery sheet, produce the B-O complex centre, forms boron oxygen complex; Thereby the reduction minority carrier life time also can cause the higher electric induced attenuation of battery sheet.Experiment shows, compares with photo attenuation, and electric induced attenuation is a process faster, at 8mA/cm
2Current density under about 1～3 hour electric induced attenuation just can accomplish basically.
Because the employing of technique scheme, compared with prior art, the present invention has following advantage:
1. the present invention's design has obtained new crystal silicon solar cell sheet electricity induced attenuation aging equipment; Utilize electric induced attenuation principle to realize early stage decay to the battery sheet; Experiment shows; Compare with photo attenuation, electric induced attenuation is a process faster, thereby can realize using on the early stage industrial production line of decaying of battery sheet.
2. aging equipment of the present invention is simple in structure, easy operating, and effective, processing cost is low, can improve the quality of products; Simultaneously, use the battery sheet after aging equipment of the present invention is handled, its appearance property and weldability are constant.
3. aging method of the present invention is simple, is fit to large-scale production.
Description of drawings
Fig. 1 is the stereogram of the embodiment of the invention one;
Fig. 2 is the front view of the embodiment of the invention one;
Fig. 3 is the right view of the embodiment of the invention one;
Fig. 4 is the rearview of the embodiment of the invention one.
Wherein: 1, support; 2, go up conductive plate; 3, lower conducting plate; 4, drive unit; 5, fan; 6, battery sheet group; 7, positioning element.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Embodiment one
Shown in Fig. 1～4, a kind of crystal silicon solar cell sheet electricity induced attenuation aging equipment comprises power supply, support 1, is located at last conductive plate 2 and lower conducting plate 3 on the support, and drive unit 4; Said upward conductive plate and lower conducting plate are oppositely arranged up and down, and said lower conducting plate is fixedly connected with support, and last conductive plate is connected with the output of said drive unit;
The said conductive plate of going up is connected with power supply through lead respectively with lower conducting plate.Also be provided with fan 5 on the support, the air outlet of fan is between upper and lower conductive plate; Also be provided with positioning element 7 on the support, positioning element one has 4, respectively around four angles being located at lower conducting plate.
Said upward conductive plate and lower conducting plate all are copper coins.
For the ease of loading and unloading battery sheet group 6, be provided with the groove of symmetry in the two side of lower conducting plate; Simultaneously, between lower conducting plate and support base plate, be provided with buffer structure.
A kind of crystal silicon solar cell sheet electricity induced attenuation aging method comprises the steps:
(1) it is stacked together in proper order 20～100 crystal silicon solar cells to be pressed positive-negative polarity, forms battery sheet group;
(2) the battery sheet group 6 with step (1) installs on the lower conducting plate 3 of above-mentioned electric induced attenuation aging equipment, and the accessory drive running moves downward until pushing down battery sheet group conductive plate 2; Feed DC Forward Current then, be 2 hours conduction time, and current density is 8mA/cm
2Battery sheet after can being decayed in early days.
Claims (6)
1. crystal silicon solar cell sheet electricity induced attenuation aging equipment is characterized in that: comprises power supply, support (1), is located at last conductive plate (2) and lower conducting plate (3) on the support, and drive unit (4); Said upward conductive plate and lower conducting plate are oppositely arranged up and down, and one of them conductive plate is fixedly connected with support, and another conductive plate is connected with the output of said drive unit;
The said conductive plate of going up is connected with power supply through lead respectively with lower conducting plate.
2. crystal silicon solar cell sheet electricity induced attenuation aging equipment according to claim 1, it is characterized in that: said lower conducting plate is fixedly connected with support, and last conductive plate is connected with the output of said drive unit.
3. crystal silicon solar cell sheet electricity induced attenuation aging equipment according to claim 1, it is characterized in that: also be provided with fan (5) on the said support, the air outlet of fan is between upper and lower conductive plate.
4. crystal silicon solar cell sheet electricity induced attenuation aging equipment according to claim 1, it is characterized in that: said upward conductive plate and lower conducting plate all are copper coins.
5. crystal silicon solar cell sheet according to claim 1 electricity induced attenuation aging equipment is characterized in that: also be provided with positioning element (7) on the said support, positioning element around be located at lower conducting plate around.
6. a crystal silicon solar cell sheet electricity induced attenuation aging method is characterized in that, comprises the steps:
(1) it is stacked together in proper order at least 2 crystal silicon solar cells to be pressed positive-negative polarity, forms battery sheet group; Said battery sheet group is put into each described crystal silicon solar cell sheet electricity induced attenuation aging equipment like claim 1-5;
(2) the battery sheet group with step (1) feeds DC Forward Current, and be at least 30 minutes conduction time, and current density is 2.05～20.55mA/cm
2
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105076579A CN102034897B (en) | 2010-10-15 | 2010-10-15 | Aging device and method for electrically attenuating crystalline silicon solar cells |
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| CN2010105076579A CN102034897B (en) | 2010-10-15 | 2010-10-15 | Aging device and method for electrically attenuating crystalline silicon solar cells |
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| CN102034897A CN102034897A (en) | 2011-04-27 |
| CN102034897B true CN102034897B (en) | 2012-08-08 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103063997B (en) * | 2012-12-26 | 2015-08-19 | 合肥晶澳太阳能科技有限公司 | A kind of pilot system and method thereof of testing solar photovoltaic assembly ageing resistance |
| CN103762275B (en) * | 2014-01-17 | 2017-01-18 | 苏州阿特斯阳光电力科技有限公司 | Attenuation method and device of crystalline silicon solar cells |
| CN104201242B (en) * | 2014-09-03 | 2016-04-06 | 常州天合光能有限公司 | Improve boron doped p-type monocrystalline silicon battery photo attenuation device and using method thereof |
| CN106910697A (en) * | 2017-04-19 | 2017-06-30 | 常州时创能源科技有限公司 | The detection method of the anti-light ability of declining of crystal silicon solar cell sheet |
| CN108091730B (en) * | 2017-12-28 | 2020-03-27 | 苏州阿特斯阳光电力科技有限公司 | Attenuation method of photovoltaic device and attenuation test method thereof |
| CN111081815B (en) * | 2019-12-05 | 2022-06-07 | 广东爱旭科技有限公司 | Method and equipment for reducing carrier attenuation of boron-doped PERC battery and battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646050A (en) * | 1994-03-25 | 1997-07-08 | Amoco/Enron Solar | Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN201450015U (en) * | 2009-07-08 | 2010-05-05 | 中电电气（南京）光伏有限公司 | Device for improving photoinduced attenuation characteristic of crystalline silicon solar battery plate |
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- 2010-10-15 CN CN2010105076579A patent/CN102034897B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5646050A (en) * | 1994-03-25 | 1997-07-08 | Amoco/Enron Solar | Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN201450015U (en) * | 2009-07-08 | 2010-05-05 | 中电电气（南京）光伏有限公司 | Device for improving photoinduced attenuation characteristic of crystalline silicon solar battery plate |
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