CN105140347A - Mass-production apparatus capable of fast improving photoinduced degradation of a P-type crystalline silicon cell and using method thereof - Google Patents
Mass-production apparatus capable of fast improving photoinduced degradation of a P-type crystalline silicon cell and using method thereof Download PDFInfo
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- CN105140347A CN105140347A CN201510605491.7A CN201510605491A CN105140347A CN 105140347 A CN105140347 A CN 105140347A CN 201510605491 A CN201510605491 A CN 201510605491A CN 105140347 A CN105140347 A CN 105140347A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 4
- 230000015556 catabolic process Effects 0.000 title abstract 3
- 238000006731 degradation reaction Methods 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000013078 crystal Substances 0.000 claims description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 241000446313 Lamella Species 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000009776 industrial production Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 4
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical group [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a mass-production apparatus capable of fast improving photo-induced degradation of a P-type crystalline silicon cell. The apparatus includes: a power source, a thermotank, a conveying belt which penetrates the thermostat and a silicon chip carrying case which is arranged on the conveying belt. The silicon chip carrying case includes an upper conducting layer and a lower conducting layer which are respectively connected to a positive electrode and a negative electrode of the power source via a wire. The P-type crystalline silicon cell slice layers are stacked inside the silicon chip carrying case. A plurality of heating apparatuses and a plurality of ventilating apparatuses are arranged inside the thermotank. The heating apparatuses are installed on the thermotank inner wall on two sides of the conveying belt. The ventilating apparatuses are installed in the surrounding of the heating apparatuses. The apparatus and the method of the invention can simultaneously improve photo-induced degradation of bulk solar cells and are easy to operate. Processing time is effectively shortened by optimizing energized current and heating temperature. According to the invention, production capacity is increased, production cost is lowered, and the requirement for industrial production is met.
Description
Technical field
The present invention relates to a kind of quick mass production device improving p-type crystal silicon solar batteries photo attenuation, belong to area of solar cell.
Background technology
" unlimitedness " that solar energy has reserves, the generality, the spatter property of utilization, the economy of utilization that exist, take on heavy responsibilities, become desirable alternative energy source in the conversion of world's energy resource structure.P-type crystal silicon solar cell and assembly are the main flows of current solar cell, and its occupation rate of market recent years is all remain on more than 80%.
The phenomenon of battery efficiency decline can there is in current p-type crystal silicon solar battery after illumination, attenuation degree even can reach 1-9% (relative value), especially obvious in p-type monocrystalline silicon battery, adds additional the power loss of solar cell and assembly, and easily because component power mismatch causes energy output further loss.
It is generally acknowledged that crystal silicon solar battery produces the reason mainly boron oxygen compound of photo attenuation, photoproduction current-carrying or pulse current injectingt can cause the interstitial oxygen concentration atom in p-type silicon chip and boron atom to form boron oxygen complex, reduce minority carrier life time, thus cause battery and component efficiency to decline.The current method improving cell light induced attenuation mainly contains two clocks, one improves silicon chip, reduce the concentration of boron or oxygen in silicon chip, but all can bring the obvious increase of production cost, be unfavorable for industrialization, another kind be light inject or electrical pumping simultaneously in conjunction with the method for heating, but light injects the method combining heating to be needed to carry out continuous light to cell piece, and each light source can only process monolithic battery sheet simultaneously, industrialization difficulty is comparatively large, and cost is high; Adopt the method for electrical pumping heating, need 30 ~ 180min, the time is longer, and often group can only process 5-50 sheet cell piece, and when cell piece quantity continues to increase, two ends are difficult to ensure with middle temperature homogeneity, have difficulties in scale of mass production.
Summary of the invention
Goal of the invention: the object of the invention is for the deficiencies in the prior art, provides a kind of quick mass production device improving p-type crystal silicon battery photo attenuation, effectively shortens the Battery disposal time, and promote single treatment amount, thus promote production production capacity, reduce production cost, meet industrialization demand;
Another object of the present invention is to provide a kind of this to improve the using method of the mass production device of p-type crystal silicon battery photo attenuation fast.
Technical scheme: the quick mass production device improving P type crystal silicon battery photo attenuation of the present invention, comprises power supply, insulating box, the conveyer belt running through described insulating box and the silicon wafer bearing box be arranged on described conveyer belt;
Described silicon wafer bearing box comprises conductive layer and lower conductiving layer, described upper conductive layer is connected respectively by the both positive and negative polarity of wire with described power supply with lower conductiving layer, P type crystal silicon solar batteries lamella stacks and is placed in described silicon wafer bearing box, and follow described silicon wafer bearing box synchronizing moving on described conveyer belt, by described insulating box;
Heater and air-breather is provided with in described insulating box, described heater is arranged on the insulating box inwall of described conveyer belt both sides, described air-breather is arranged on around described heater, passes into nitrogen or the even heat that described heater produces is transferred on the P type crystal silicon solar batteries sheet in described silicon wafer bearing box by compressed air.
The present invention further preferably technical scheme is, described heater is heater strip, and described air-breather is breather pipe, and the outlet-inclined impeller vane of described breather pipe upwards, is 25 ~ 75 ° of angles with described conveyer belt plane.
Preferably, the downside of the upper conductive layer of described silicon wafer bearing box is also arranged 2 ~ 15 probes, the upper end of described probe is connected with described upper conductive layer, and lower end is connected with the P type crystal silicon solar batteries sheet surface electrode in described silicon wafer bearing box.
Preferably, described silicon wafer bearing box also comprises insulator foot and insulation column, and described insulator foot is arranged on the bottom of described silicon wafer bearing box, directly contacts with described conveyer belt; Described insulation column is arranged on four sides of described silicon wafer bearing box, stacks for locating fixed bed the P type crystal silicon solar batteries sheet be placed in described silicon wafer bearing box.
Preferably, the P type crystal silicon solar batteries sheet quantity that described silicon wafer bearing box inner stacks is stacked is 55 ~ 400.
The quick using method improving the mass production device of P type crystal silicon battery photo attenuation of the present invention, comprises the steps:
(1) by P type crystal silicon solar batteries sheet according to all face up or back side order ranked and stacked pile upwards in silicon wafer bearing box, the surface electrode of outermost cell piece is connected with upper conductive layer and lower conductiving layer respectively, composition pile;
(2) both positive and negative polarity of pile that step (1) forms is connected with the both positive and negative polarity of power supply, then silicon wafer bearing box is placed on conveyer belt;
(3) start conveyer belt and insulating box, silicon wafer bearing box enters in insulating box, passes into electric current to pile, and current density is 501 ~ 5000mA/cm
2, cell piece temperature is 230 ~ 500 DEG C, and conduction time is 1 ~ 20 minute;
(4) by the P type crystal silicon solar batteries sheet cool to room temperature after process, and test and classify is carried out.
Further, described P type crystal silicon solar batteries sheet is p type single crystal silicon solar battery sheet or P type polycrystalline silicon solar cell sheet.
As preferably, when in step (1), P type crystal silicon solar batteries sheet is p type single crystal silicon solar battery sheet, in step (3), current density is 501 ~ 1500mA/cm
2, cell piece temperature is 230 ~ 300 DEG C, and conduction time is 5 ~ 20 minutes.
As preferably, when in step (1), P type crystal silicon solar batteries sheet is P type polysilicon solar battery slice, in step (3), current density is 2500 ~ 4000mA/cm
2, cell piece temperature is 300 ~ 400 DEG C, and conduction time is 1 ~ 10 minute.
As preferably, step (2) described power supply is DC power supply or the pulse power.
Operation principle of the present invention is: when passing into big current to crystalline silicon solar cell piece, cell piece inside produces a large amount of non equilibrium carrier, simultaneously under uniform temperature effect, hydrogen atom in battery surface passivating film will discharge, non equilibrium carrier and hydrogen atom can be combined by boron oxygen atom under uniform temperature effect in cell piece, form stable hydrogen boron oxide structure, significantly reduce cell piece and receive the right generation of boron oxygen in illumination or electrical pumping situation follow-up, thus improve photo attenuation.
Beneficial effect: (1) can realize carrying out photo attenuation improvement to cell piece in enormous quantities by device and method of the present invention simultaneously, simple to operate, effectively the processing time is shortened by the optimization of electrical current and heating-up temperature, the former need processing time of 30 ~ 180 minutes is foreshortened to 1 ~ 20 minute, increase substantially treatment effeciency, increase production capacity, reduce production cost, meet the demand that industrialization is produced;
(2) the present invention is cooperatively interacted by heater and ventilation unit and guarantees that in insulating box, gas flow temperature is consistent, keeps the uniformity of the cell piece temperature of heap poststack, improves treatment effeciency and product quality;
(3) the present invention is when processing for polysilicon, can also realize carrying out hydrogen passivation to defect, improves efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is the quick structural representation improving the mass production device of P type crystal silicon battery photo attenuation of the present invention;
Fig. 2 is the structural representation of silicon wafer bearing box of the present invention.
Wherein, 1-silicon wafer bearing box, 2-insulating box, 3-conveyer belt, 4-heater, 5-air-breather, 6-power supply, 11-insulator foot, the upper conductive layer of 12-, 13-lower conductiving layer, 14-insulate column, 15-probe.
Embodiment
Below by accompanying drawing, technical solution of the present invention is described in detail, but protection scope of the present invention is not limited to described embodiment.
The quick mass production device improving p-type crystal silicon battery photo attenuation, as shown in Figure 1, 2, comprises power supply 6, insulating box 2, the conveyer belt 3 running through insulating box 2 and the silicon wafer bearing box 1 be arranged on conveyer belt 3.Silicon wafer bearing box 1 holds 55 ~ 400 cell pieces, and power supply comprises DC power supply and the pulse power.
Wherein silicon wafer bearing box 1 comprises the insulation column 14 being arranged on the insulator foot 11 bottom silicon wafer bearing box, dismountable upper conductive layer 12, lower conductiving layer 13 and being arranged on silicon wafer bearing box 1 four side, upper conductive layer 12 is connected with power supply 6 the two poles of the earth respectively by wire with lower conductiving layer 13, the downside of upper conductive layer 12 also arranges 2 ~ 15 probes 15, the upper end of probe 15 is connected with upper conductive layer 12, lower end is connected with the P type crystal silicon solar batteries sheet surface electrode in silicon wafer bearing box 1, and silicon wafer bearing box 1 interval suitable distance is placed on conveyer belt 3 successively;
In the insulating box 2 inner both sides near conveyer belt 3, heater 4 and air-breather 5 are installed, wherein heater 4 is heater strip, air-breather 5 is breather pipe, air-breather 5 is positioned near heater 4, near conveyer belt 3, the outlet-inclined impeller vane of air-breather 5 upwards, is 25 ~ 75 ° of angles with the plane of conveyer belt 3, the gas passed in air-breather 5 in process of production can blow to P type crystal silicon solar batteries sheet in silicon wafer bearing box 1, and the gas passed into is nitrogen or compressed air.
In production process, first silicon wafer bearing box 1 is installed, open conductive layer 12, upper conductive layer 12 on silicon wafer bearing box 1 bonnet is put into by stacking for the cell piece of some, then the speed of conveyer belt 3 is set as required, mounted silicon wafer bearing box 1 is placed on conveyer belt 3, energising is started according to the current density of setting after silicon wafer bearing box 1 enters insulating box 2, gas flow temperature is realized consistent by the heater 4 of insulating box 2 inside and ventilation unit 5, ensure cell piece homogeneous temperature in silicon wafer bearing box 1, energising is stopped when silicon wafer bearing box 1 leaves insulating box 2, naturally after cooling, cell piece takes out by the upper conductive layer 12 of dismounting, subsequent handling can be entered.
Embodiment 1:
Carried out stackingly putting into silicon wafer bearing box according to the order that all faces up by 100 p-type single crystal silicon solar cell sheets, adopt DC power supply energising, current density is set to 1000mA/cm
2, keep calorstat temperature at 250 DEG C, setting line speed makes silicon wafer bearing box be 15 minutes by the time in insulating box, taking-up after cell piece cools naturally.Cell piece after process and same batch of undressed cell piece are carried out contrast test, and result is as follows:
Embodiment 2:
Carried out stackingly putting into silicon wafer bearing box according to the order that all faces up by 200 p-type polycrystalline silicon solar cell sheets, adopt DC power supply energising, current density is set to 3000mA/cm
2, keep calorstat temperature at 375 DEG C, setting line speed makes silicon wafer bearing box be 8 minutes by the time in insulating box, taking-up after cell piece cools naturally.Cell piece after process and same batch of undressed cell piece are carried out contrast test, and result is as follows:
Embodiment 3:
Carried out stackingly putting into silicon wafer bearing box according to the order that all faces up by 55 p-type single crystal silicon solar cell sheets, adopt pulse power energising, current density is set to 501mA/cm
2, keep calorstat temperature at 230 DEG C, setting line speed makes silicon wafer bearing box be 20 minutes by the time in insulating box, taking-up after cell piece cools naturally.Cell piece after process and same batch of undressed cell piece are carried out contrast test, and result is as follows:
Embodiment 4:
By 400 p-type polycrystalline silicon solar cell sheets according to whole back side upwards order carry out stackingly putting into silicon wafer bearing box, adopt DC power supply energising, current density is set to 4000mA/cm
2, keep calorstat temperature at 400 DEG C, setting line speed makes silicon wafer bearing box be 3 minutes by the time in insulating box, taking-up after cell piece cools naturally.Cell piece after process and same batch of undressed cell piece are carried out contrast test, and result is as follows:
Showing by testing above, adopting the crystal silicon solar battery sheet photo attenuation after the inventive method and mass production device process significantly to reduce.
As mentioned above, although represented with reference to specific preferred embodiment and described the present invention, it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite not departing from claims definition, various change can be made in the form and details to it.
Claims (10)
1. one kind is improved the mass production device of P type crystal silicon battery photo attenuation fast, it is characterized in that, comprise power supply (6), insulating box (2), the conveyer belt (3) running through described insulating box (2) and the silicon wafer bearing box (1) be arranged on described conveyer belt (3);
Described silicon wafer bearing box (1) comprises conductive layer (12) and lower conductiving layer (13), described upper conductive layer (12) is connected respectively by the both positive and negative polarity of wire with described power supply (6) with lower conductiving layer (13), P type crystal silicon solar batteries lamella stacks and is placed in described silicon wafer bearing box (1), and follow described silicon wafer bearing box (1) at the upper synchronizing moving of described conveyer belt (3), by described insulating box (2);
Heater (4) and air-breather (5) is provided with in described insulating box (2), described heater (4) is arranged on insulating box (2) inwall of described conveyer belt (3) both sides, described air-breather (5) is arranged on described heater (4) around, passes into nitrogen or the even heat that described heater (4) produces is transferred on the P type crystal silicon solar batteries sheet in described silicon wafer bearing box (2) by compressed air.
2. the quick mass production device improving P type crystal silicon battery photo attenuation according to claim 1, it is characterized in that, described heater (4) is heater strip, described air-breather (5) is breather pipe, the outlet-inclined impeller vane of described breather pipe (5) upwards, is 25 ~ 75 ° of angles with described conveyer belt (3) plane.
3. the quick mass production device improving P type crystal silicon battery photo attenuation according to claim 1, it is characterized in that, the downside of the upper conductive layer (12) of described silicon wafer bearing box (1) is also arranged 2 ~ 15 probes (15), the upper end of described probe (15) is connected with described upper conductive layer (12), and lower end is connected with the P type crystal silicon solar batteries sheet surface electrode in described silicon wafer bearing box (1).
4. the quick mass production device improving P type crystal silicon battery photo attenuation according to claim 3, it is characterized in that, described silicon wafer bearing box (1) also comprises insulator foot (11) and insulation column (14), described insulator foot (11) is arranged on the bottom of described silicon wafer bearing box (1), directly contacts with described conveyer belt (3); Described insulation column (14) is arranged on four sides of described silicon wafer bearing box (1), stacks for locating fixed bed the P type crystal silicon solar batteries sheet be placed in described silicon wafer bearing box (1).
5. the quick mass production device improving P type crystal silicon battery photo attenuation according to claim 1, is characterized in that, the P type crystal silicon solar batteries sheet quantity that described silicon wafer bearing box (1) inner stacks is stacked is 55 ~ 400.
6. the quick using method improving the mass production device of P type crystal silicon battery photo attenuation according to claim 1, is characterized in that, comprise the steps:
(1) by P type crystal silicon solar batteries sheet according to all face up or back side order ranked and stacked pile upwards in silicon wafer bearing box (1), the surface electrode of outermost cell piece is connected with upper conductive layer (12) and lower conductiving layer (13) respectively, composition pile;
(2) both positive and negative polarity of pile step (1) formed is connected with the both positive and negative polarity of power supply (6), then is placed on conveyer belt (3) by silicon wafer bearing box (1);
(3) regulate the temperature of conveyer belt (3) speed and insulating box (2), silicon wafer bearing box (1) enters in insulating box (2), passes into electric current to pile, and current density is 501 ~ 5000mA/cm
2, cell piece temperature is 230 ~ 500 DEG C, and conduction time is 1 ~ 20 minute;
(4) by the P type crystal silicon solar batteries sheet cool to room temperature after process, and test and classify is carried out.
7. using method according to claim 6, is characterized in that, described P type crystal silicon solar batteries sheet is p type single crystal silicon solar battery sheet or P type polycrystalline silicon solar cell sheet.
8. using method according to claim 7, is characterized in that, when in step (1), P type crystal silicon solar batteries sheet is p type single crystal silicon solar battery sheet, in step (3), current density is 501 ~ 1500mA/cm
2, cell piece temperature is 230 ~ 300 DEG C, and conduction time is 5 ~ 20 minutes.
9. using method according to claim 7, is characterized in that, when in step (1), P type crystal silicon solar batteries sheet is P type polysilicon solar battery slice, in step (3), current density is 2500 ~ 4000mA/cm
2, cell piece temperature is 300 ~ 400 DEG C, and conduction time is 1 ~ 10 minute.
10. the using method according to claim 6 ~ 9 any one, is characterized in that, step (2) described power supply (6) is DC power supply or the pulse power.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105789382A (en) * | 2016-05-20 | 2016-07-20 | 浙江晶科能源有限公司 | Method for improving light degradation of boron-doped crystalline silicon solar cell |
| CN106910697A (en) * | 2017-04-19 | 2017-06-30 | 常州时创能源科技有限公司 | The detection method of the anti-light ability of declining of crystal silicon solar cell sheet |
| CN107068806A (en) * | 2017-04-19 | 2017-08-18 | 常州时创能源科技有限公司 | The method for eliminating polycrystalline silicon battery plate interior metal complex |
| CN107230650A (en) * | 2017-06-01 | 2017-10-03 | 常州时创能源科技有限公司 | The rapid prototyping equipment of solar cell light decay test |
| CN108091730A (en) * | 2017-12-28 | 2018-05-29 | 苏州阿特斯阳光电力科技有限公司 | The damped system and its decay testing method of a kind of photovoltaic device |
| CN108630772A (en) * | 2018-05-04 | 2018-10-09 | 江西展宇新能源股份有限公司 | A kind of hydrogen passivation technology improving monocrystalline solar cell light decay problem |
| CN109379045A (en) * | 2018-11-27 | 2019-02-22 | 中节能太阳能科技（镇江）有限公司 | A kind of device and method detecting crystal silicon battery photo attenuation |
| CN111785798A (en) * | 2020-07-01 | 2020-10-16 | 晋能清洁能源科技股份公司 | Hydrogen passivation effect improving device and method for improving light attenuation of polycrystal and monocrystal-like light |
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