CN202255834U - Device for quickening photoinduced attenuation of solar battery with crystalline silicon - Google Patents

Device for quickening photoinduced attenuation of solar battery with crystalline silicon Download PDF

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Publication number
CN202255834U
CN202255834U CN2011202495532U CN201120249553U CN202255834U CN 202255834 U CN202255834 U CN 202255834U CN 2011202495532 U CN2011202495532 U CN 2011202495532U CN 201120249553 U CN201120249553 U CN 201120249553U CN 202255834 U CN202255834 U CN 202255834U
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China
Prior art keywords
light source
air quantity
light intensity
fan
battery
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Expired - Fee Related
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CN2011202495532U
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Chinese (zh)
Inventor
董仲
张彩霞
裴善水
倪志春
王艾华
赵建华
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CHINA SUNERGY (NANJING) Co Ltd
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CHINA SUNERGY (NANJING) Co Ltd
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Priority to CN2011202495532U priority Critical patent/CN202255834U/en
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Abstract

The utility model discloses a device for quickening the photoinduced attenuation of a solar battery with crystalline silicon, which comprises a basal plate for bearing a sample. The utility model is characterized in that the device is also provided with a fan and a light source with high light intensity; the light source with high light intensity is positioned above the basal plate and is in downward light irradiation; and the wind direction of the fan is towards the basal plate. The light source with high light intensity is a xenon lamp or a tungsten-halogen lamp. The light irradiation of a battery is carried out by using the xenon lamp or the tungsten-halogen lamp, the height of the light source can be regulated between 10cm and 40cm, and the light intensity can be regulated between 1 kilowatt/m<2> and 3 kilowatts/m<2>. An axial flow fan with large air quantity is adopted as the fan. The battery is cooled by using the axial flow fan with large air quantity, and the air quantity can be regulated between 0.5m<3>/min and 30m<3>/min so as to ensure that the temperature of the battery is between 60 DEG C and 70 DEG C at the time of an experiment. According to the device for quickening the photoinduced attenuation of the solar battery with the crystalline silicon, the structure is simple, the operation is easy, and the speed of the photoinduced attenuation of the solar battery with the crystalline silicon can be quickened, so that the period of the relevant experiment is greatly shortened.

Description

A kind of device that quickens the crystal-silicon solar cell photo attenuation
Technical field
The utility model relates to a kind of device that quickens the crystal-silicon solar cell photo attenuation.The crystal-silicon solar cell of this apparatus processes is single crystal silicon solar cell or polycrystalline silicon solar cell.
Background technology
Crystal-silicon solar cell is the main product in present photovoltaic cell market.Yet, owing to introduced impurity in the silicon crystal growth course, cause adulterant wherein to form recombination centers to the initial stage illumination meeting of battery, thereby the minority carrier life time of silicon chip is reduced with impurity such as oxygen, iron, cause that battery conversion efficiency descends, the generation photo attenuation.
The general mode that battery is carried out open-air exposure that adopts is studied its light induced attenuation characteristic in the industry, but this mode receives extraneous weather effect easily.It is 1 kilowatt/m that the mechanism that also has uses light intensity 2Analog light source do light irradiation apparatus.This dual mode is all longer required experimental period, is approximately 10 to 20 hours.
The utility model content
The utility model technical matters to be solved is to provide a kind of device that quickens the crystal-silicon solar cell photo attenuation.This device adopts the light source of high light intensity that crystal-silicon solar cell is handled, and can under the prerequisite that does not influence other performances of crystal-silicon solar cell, quicken its decay.
A kind of device that quickens the crystal-silicon solar cell photo attenuation that the utility model relates to comprises the substrate that carries sample, it is characterized in that: this device also is provided with big air quantity fan and high light intensity light source; Said high light intensity light source is positioned at the top of substrate, illumination downwards; Said big air quantity fan, its wind direction is towards substrate.
To be high light intensity light source carry out illumination at the crystalline silicon solar cell modules or the front of adding a cover the battery sheet of ultra-clear glasses to this device, with big air quantity fan to its cooling so that it remains on normal working temperature.
Said high light intensity light source is xenon lamp or halogen tungsten lamp.With xenon lamp or halogen tungsten lamp battery is carried out illumination, the light source height can be regulated between 10cm to 40cm, and light intensity can be at 1 kilowatt/m 2To 3 kilowatts/m 2Between regulate.
Said fan is big air quantity axial flow blower.With big air quantity axial flow blower battery is lowered the temperature, air quantity can be at 0.5m 3/ min to 30m 3Regulate between/the min, the temperature of battery is between 60 ℃ to 70 ℃ when guaranteeing to test.
The principle that the utility model adopts intense light source illumination to quicken the crystal-silicon solar cell photo attenuation is:
Impurity such as oxygen, iron is the principal element that causes the crystal-silicon solar cell photo attenuation.When normal temperature illumination, energy goes out charge carrier greater than the photon excitation of the energy gap of silicon, and impurity such as adulterant and oxygen, iron generate the recombination center under the effect of charge carrier, cause photo attenuation.Increase the quantity of this part incident photon, can accelerate the generating rate in recombination center.Simultaneously, with big air quantity fan the battery cooling is caused other influences that battery temperature raises and brings to avoid strong illumination.
This device can expand according to the demand of experimental amount.
This device also can be used for the photo attenuation experiment of low multiple concentrator cell.
The utility model is simple in structure, and easy operating can shorten experimental period significantly.
Description of drawings
Fig. 1 is a kind of apparatus structure synoptic diagram that quickens the crystal-silicon solar cell photo attenuation of the utility model.
Fig. 2 is the side cutaway view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing, the utility model is done further explain.
Like Fig. 1, shown in 2, a kind of device that quickens the crystal-silicon solar cell photo attenuation, general frame is made up of the substrate 5 and the top cover 6 of base 1, aluminum alloy frame 2, carrying sample.Substrate 5 is horizontally placed on the middle part of aluminum alloy frame, and its top is high light intensity light source 4, and big air quantity fan 3 is arranged on the aluminum alloy frame 2, is positioned at the upper lateral part of substrate and presses close to substrate.Also be provided with insulating panel 9 on the aluminum alloy frame 2, the switch of the three-phase breaker 7 on the insulating panel 9 and No. four single-pole switchs 8 control light sources and fan.
High light intensity light source adopts xenon lamp or halogen tungsten lamp, and the light source height can be regulated between 10cm to 40cm, and light intensity can be at 1 kilowatt/m 2To 3 kilowatts/m 2Between regulate.
Fan adopts big air quantity axial flow blower, and air quantity can be at 0.5m 3/ min to 30m 3Regulate between/the min, the temperature of battery is between 60 ℃ to 70 ℃ when guaranteeing to test.
The battery sheet of adding a cover ultra-clear glasses is placed on the light source below, and the light intensity of setting this device is 3 kilowatts/m 2, regulate air quantity of fan and make battery sheet temperature remain on about 60 ℃.After 4 hours, it is 1 kilowatt/m that the attenuation rate of battery sheet approximates light intensity through this device illumination 2The common simulation light source light according to 12 hours attenuation rate.For example, getting 30 monocrystalline, 156 battery sheets, is 1 kilowatt/m through light intensity 2The common simulation light source light according to after 12 hours, attenuation rate is 2.15%.Other gets 30 monocrystalline, the 156 battery sheets of same batch of same class, quickens attenuating device illumination after 4 hours through this, and attenuation rate is 2.24%, has reached 12 hours effect of ordinary light source illumination.

Claims (3)

1. device that quickens the crystal-silicon solar cell photo attenuation, it comprises the substrate that carries sample, it is characterized in that: this device also comprises big air quantity fan and high light intensity light source; Said high light intensity light source is positioned at substrate top, illumination downwards; Said big air quantity fan, its wind direction is towards substrate.
2. the device of acceleration crystal-silicon solar cell photo attenuation according to claim 1 is characterized in that: described high light intensity light source is xenon lamp or halogen tungsten lamp, and the light source height is regulated between 10cm to 40cm, and light intensity is at 1 kilowatt/m 2To 3 kilowatts/m 2Between regulate.
3. the device of acceleration crystal-silicon solar cell photo attenuation according to claim 1 is characterized in that: described big air quantity fan is big air quantity axial flow blower, and air quantity is at 0.5m 3/ min to 30m 3Regulate between/the min.
CN2011202495532U 2011-07-15 2011-07-15 Device for quickening photoinduced attenuation of solar battery with crystalline silicon Expired - Fee Related CN202255834U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011202495532U CN202255834U (en) 2011-07-15 2011-07-15 Device for quickening photoinduced attenuation of solar battery with crystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011202495532U CN202255834U (en) 2011-07-15 2011-07-15 Device for quickening photoinduced attenuation of solar battery with crystalline silicon

Publications (1)

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CN202255834U true CN202255834U (en) 2012-05-30

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CN2011202495532U Expired - Fee Related CN202255834U (en) 2011-07-15 2011-07-15 Device for quickening photoinduced attenuation of solar battery with crystalline silicon

Country Status (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261677A (en) * 2015-11-18 2016-01-20 浙江晶科能源有限公司 Method for rapid light-induced degradation of solar cell piece
CN106788249A (en) * 2016-12-13 2017-05-31 成都绿迪科技有限公司 A kind of cell piece light decay device
CN106990345A (en) * 2017-05-18 2017-07-28 常州亿晶光电科技有限公司 Normal temperature used in silicon chip attenuation test is exposed to the sun device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261677A (en) * 2015-11-18 2016-01-20 浙江晶科能源有限公司 Method for rapid light-induced degradation of solar cell piece
CN105261677B (en) * 2015-11-18 2017-08-25 浙江晶科能源有限公司 A kind of method of the quick photo attenuation of solar cell piece
CN106788249A (en) * 2016-12-13 2017-05-31 成都绿迪科技有限公司 A kind of cell piece light decay device
CN106990345A (en) * 2017-05-18 2017-07-28 常州亿晶光电科技有限公司 Normal temperature used in silicon chip attenuation test is exposed to the sun device

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120530

Termination date: 20150715

EXPY Termination of patent right or utility model