CN105261677B - A kind of method of the quick photo attenuation of solar cell piece - Google Patents
A kind of method of the quick photo attenuation of solar cell piece Download PDFInfo
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- CN105261677B CN105261677B CN201510795445.8A CN201510795445A CN105261677B CN 105261677 B CN105261677 B CN 105261677B CN 201510795445 A CN201510795445 A CN 201510795445A CN 105261677 B CN105261677 B CN 105261677B
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- cell piece
- solar cell
- photo attenuation
- thermal annealing
- quick
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 238000005286 illumination Methods 0.000 claims abstract description 20
- 230000003760 hair shine Effects 0.000 claims abstract description 11
- 230000005611 electricity Effects 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of method of the quick photo attenuation of solar cell piece, including：Thermal annealing is carried out to solar cell piece；Bloom is carried out to the solar cell piece and shines intensity illumination.The method for the quick photo attenuation of above-mentioned solar cell piece that the application is provided, can be greatly shortened the photo attenuation experimental period of solar cell piece and component.
Description
Technical field
The present invention relates to solar cell manufacturing technology field, more particularly to a kind of quick photo attenuation of solar cell piece
Method.
Background technology
At present, the P-type crystal silicon solar cell of boron-doping occupies photovoltaic market more than 70%, however, this kind of solar cell exists
The phenomenon that efficiency declines occurs when using, the phenomenon is referred to as photo attenuation (Light-induced degradation：
LID), its essence is that boron and oxygen in silicon crystal combines generation boron oxygen to complex centre, and the boron oxygen is to easily capturing few son so that
Minority carrier life time declines, and efficiency reduction, polycrystalline cell decay ratio is 1% to 2%, and monocrystalline attenuation ratio is up to 3% to 5%.
In the prior art, it is general to irradiate cell piece or open-air exposure component to study light using the light source for simulating full spectrum
Induced attenuation characteristic, however, the experimental period of both modes is longer, more than ten hour experimental period of cell piece photo attenuation is even
It is tens hours, component photo attenuation one month to several months experimental period.
The content of the invention
To solve the above problems, the invention provides a kind of method of the quick photo attenuation of solar cell piece, can be significantly
Degree shortens the photo attenuation experimental period of solar cell piece and component.
A kind of method for the quick photo attenuation of solar cell piece that the present invention is provided, including：
Thermal annealing is carried out to solar cell piece；
Bloom is carried out to the solar cell piece and shines intensity illumination.
It is preferred that, in the method for the quick photo attenuation of above-mentioned solar cell piece,
Before the progress thermal annealing to solar cell piece, in addition to：
Environment residing for the solar cell piece is vacuumized.
It is preferred that, in the method for the quick photo attenuation of above-mentioned solar cell piece,
It is described that solar cell piece is carried out before thermal annealing also to include：
The temperature range for setting the thermal annealing is 200 DEG C to 300 DEG C.
It is preferred that, in the method for the quick photo attenuation of above-mentioned solar cell piece,
It is described that solar cell piece is carried out before thermal annealing also to include：
The time range for setting the thermal annealing is 20 minutes to 30 minutes.
It is preferred that, in the method for the quick photo attenuation of above-mentioned solar cell piece,
It is described that the solar cell piece is carried out before bloom shines intensity illumination also to include：
The intensity of illumination scope for setting light source is 1*103W/m2To 2*103W/m2。
It is preferred that, in the method for the quick photo attenuation of above-mentioned solar cell piece,
It is described that the solar cell piece is carried out before bloom shines intensity illumination also to include：
The scope for setting irradiation time is 1 hour to 2 hours.
The method for the quick photo attenuation of above-mentioned solar cell piece that the present invention is provided, due to first carrying out heat to solar cell piece
Annealing, can quickly boron atom and the activity of oxygen atom inside activated batteries piece, improve its diffusion rate, then electric to the sun
Pond piece carries out bloom and shines intensity illumination, can accelerate boron atom and be combined into boron oxygen pair with oxygen atom, form complex centre, cause light
Induced attenuation, therefore, it is possible to which the photo attenuation experimental period of cell piece and component is greatly shortened.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
The schematic diagram of the method for the quick photo attenuation of the first solar cell piece that Fig. 1 provides for the embodiment of the present application；
The schematic diagram of the method for the quick photo attenuation of second of solar cell piece that Fig. 2 provides for the embodiment of the present application；
The schematic diagram of the method for the quick photo attenuation of the third solar cell piece that Fig. 3 provides for the embodiment of the present application.
Embodiment
The core concept of the present invention is the method for providing a kind of quick photo attenuation of solar cell piece, can significantly contract
The photo attenuation experimental period of short cell piece and component.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The method for the quick photo attenuation of the first solar cell piece that the embodiment of the present application is provided is as shown in figure 1, Fig. 1 is this
Apply for the schematic diagram of the method for the quick photo attenuation of the first solar cell piece that embodiment is provided.This method includes following step
Suddenly：
S1：Thermal annealing is carried out to solar cell piece；
The cell piece sub-elected can be placed in thermal annealing stove and carry out after being sorted to cell piece by the step,
By to cell piece carry out thermal anneal process, can quickly activated batteries piece inside boron atom and oxygen atom activity, improve it
Diffusion rate.
S2：Bloom is carried out to the solar cell piece and shines intensity illumination.
The light source that the step is used can simulate the xenon lamp or Halogen lamp LED of full spectrum, and its light source is fixed, illumination
Intensity can be in 1*103W/m2To 2*103W/m2Interior regulation, can be with by carrying out high intensity of illumination processing to the cell piece of thermal annealing
Accelerate boron atom and be combined into boron oxygen pair with oxygen atom, form complex centre, cause photo attenuation.
The method for the quick photo attenuation of above-mentioned solar cell piece that the embodiment of the present application is provided, due to first to solar cell piece
Carry out thermal annealing, can quickly activated batteries piece inside boron atom and the activity of oxygen atom, improve its diffusion rate, then to described
Solar cell piece carries out bloom and shines intensity illumination, can accelerate boron atom and be combined into boron oxygen pair with oxygen atom, form complex centre,
Photo attenuation is caused, therefore, it is possible to which the photo attenuation experimental period of cell piece and component is greatly shortened.
The method for the quick photo attenuation of second of solar cell piece that the embodiment of the present application is provided is as shown in Fig. 2 Fig. 2 is this
Apply for the schematic diagram of the method for the quick photo attenuation of second of solar cell piece that embodiment is provided.This method includes following step
Suddenly：
A1：Environment residing for the solar cell piece is vacuumized；
The step can be vacuumized, it becomes possible to prevent cell piece from moving back with being carried out in vacuum annealing stove before thermal annealing
Because temperature is high and aoxidizes during fire, the influence of electric property may be changed by eliminating other.
A2：Thermal annealing is carried out to solar cell piece；
The cell piece sub-elected can be placed in thermal annealing stove and carry out after being sorted to cell piece by the step,
By to cell piece carry out thermal anneal process, can quickly activated batteries piece inside boron atom and oxygen atom activity, improve it
Diffusion rate.
A3：Bloom is carried out to the solar cell piece and shines intensity illumination.
The light source that the step is used can simulate the xenon lamp or Halogen lamp LED of full spectrum, and its light source is fixed, illumination
Intensity can be in 1*103W/m2To 2*103W/m2Interior regulation, the platform that the cell piece after thermal annealing is placed in photo attenuation device
On, it is irradiated using the light source of high intensity of illumination, high intensity of illumination processing, Ke Yijia is carried out by the cell piece to thermal annealing
Fast boron atom is combined into boron oxygen pair with oxygen atom, forms complex centre, causes photo attenuation.
The method for the above-mentioned quick photo attenuation of second of solar cell piece that the embodiment of the present application is provided, can not only be significantly
Degree shortens the photo attenuation experimental period of cell piece and component, moreover it is possible to which the influence of electric property may be changed by eliminating other.
The method for the quick photo attenuation of the third solar cell piece that the embodiment of the present application is provided is as shown in figure 3, Fig. 3 is this
Apply for the schematic diagram of the method for the quick photo attenuation of the third solar cell piece that embodiment is provided.This method includes following step
Suddenly：
B1:The temperature range for setting the thermal annealing is 200 DEG C to 300 DEG C；
It should be noted that being arranged to this temperature range, boron atom and oxygen are former inside quick activated batteries piece preferably
The activity of son, improves its diffusion rate, is unlikely to impact electric property again.
B2:The time range for setting the thermal annealing is 20 minutes to 30 minutes；
It should be noted that being arranged to the time range of this thermal annealing, boron atom and oxygen inside cell piece ensure that
The activity of atom is activated, and electric property will not be impacted again.
B3：Thermal annealing is carried out to solar cell piece；
B4：Bloom is carried out to the solar cell piece and shines intensity illumination.
On the basis of above three embodiment, there can also be following optimal technical scheme：It is described electric to the sun
Pond piece also include before bloom shines intensity illumination：The intensity of illumination scope for setting light source is 1*103W/m2To 2*103W/m2,
Further, the scope for setting irradiation time is 1 hour to 2 hours.Under so high intensity of illumination, the light decay rate of deceleration is obtained
Significantly lifted, even tens times of several times before can reaching, and with regard to optical attenuation can be completed within 1 hour to 2 hours
Process, add the time of 20 minutes to 30 minutes of thermal annealing, total processing time is no more than 2.5 hours, this with respect to
The test period of preceding more than ten hour even tens hours is greatly lowered, and processing time is short so that battery
Piece is difficult to be oxidized, and can eliminate the influence to cell piece electric property.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (3)
1. a kind of method of the quick photo attenuation of solar cell piece, it is characterised in that including：
Environment residing for solar cell piece is vacuumized；
The temperature range for setting thermal annealing is 200 DEG C to 300 DEG C, and thermal annealing is carried out to solar cell piece；
The intensity of illumination scope for setting light source is 1*103W/m2To 2*103W/m2, the solar cell piece is irradiated.
2. the method for the quick photo attenuation of solar cell piece according to claim 1, it is characterised in that described to sun electricity
Pond piece also include before thermal annealing：
The time range for setting the thermal annealing is 20 minutes to 30 minutes.
3. the method for the quick photo attenuation of solar cell piece according to claim 2, it is characterised in that it is described to it is described too
Positive cell piece also include before bloom shines intensity illumination：
The scope for setting irradiation time is 1 hour to 2 hours.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510795445.8A CN105261677B (en) | 2015-11-18 | 2015-11-18 | A kind of method of the quick photo attenuation of solar cell piece |
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| CN201510795445.8A CN105261677B (en) | 2015-11-18 | 2015-11-18 | A kind of method of the quick photo attenuation of solar cell piece |
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| CN105261677A CN105261677A (en) | 2016-01-20 |
| CN105261677B true CN105261677B (en) | 2017-08-25 |
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| CN108055005A (en) * | 2017-12-15 | 2018-05-18 | 浙江晶科能源有限公司 | A kind of light decay method of cell piece |
| CN108615790A (en) * | 2018-04-11 | 2018-10-02 | 浙江师范大学 | A method of inhibiting the hot fill-in light induced attenuation of polysilicon PERC batteries |
| CN109004064B (en) * | 2018-07-26 | 2020-06-26 | 浙江晶科能源有限公司 | Manufacturing method of P-type battery piece |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN101762779A (en) * | 2010-01-18 | 2010-06-30 | 上海晶澳太阳能光伏科技有限公司 | Photoinduced attenuation testing system of battery sheet and testing method thereof |
| CN102479875A (en) * | 2010-11-30 | 2012-05-30 | 江苏顺风光电科技有限公司 | Solar cell attenuation device |
| CN202255834U (en) * | 2011-07-15 | 2012-05-30 | 中电电气（南京）光伏有限公司 | Device for quickening photoinduced attenuation of solar battery with crystalline silicon |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
-
2015
- 2015-11-18 CN CN201510795445.8A patent/CN105261677B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN101762779A (en) * | 2010-01-18 | 2010-06-30 | 上海晶澳太阳能光伏科技有限公司 | Photoinduced attenuation testing system of battery sheet and testing method thereof |
| CN102479875A (en) * | 2010-11-30 | 2012-05-30 | 江苏顺风光电科技有限公司 | Solar cell attenuation device |
| CN202255834U (en) * | 2011-07-15 | 2012-05-30 | 中电电气（南京）光伏有限公司 | Device for quickening photoinduced attenuation of solar battery with crystalline silicon |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
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