CN105261677A - Method for rapid light-induced degradation of solar cell piece - Google Patents
Method for rapid light-induced degradation of solar cell piece Download PDFInfo
- Publication number
- CN105261677A CN105261677A CN201510795445.8A CN201510795445A CN105261677A CN 105261677 A CN105261677 A CN 105261677A CN 201510795445 A CN201510795445 A CN 201510795445A CN 105261677 A CN105261677 A CN 105261677A
- Authority
- CN
- China
- Prior art keywords
- cell piece
- solar cell
- thermal annealing
- carried out
- light induced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000015556 catabolic process Effects 0.000 title abstract 4
- 238000006731 degradation reaction Methods 0.000 title abstract 4
- 238000000137 annealing Methods 0.000 claims abstract description 30
- 238000005286 illumination Methods 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 10
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for rapid light-induced degradation of a solar cell piece. The method comprises the steps of performing thermal annealing on the solar cell piece; and performing high-illumination-intensity irradiation on the solar cell piece. According to the method for the rapid light-induced degradation of the solar cell piece, the experimental period for the light-induced degradation of the solar cell piece can be dramatically shortened.
Description
Technical field
The present invention relates to solar cell manufacturing technology field, particularly relate to a kind of method of solar cell piece fast light induced attenuation.
Background technology
At present, the P-type crystal silicon solar cell of boron-doping occupies photovoltaic market more than 70%, but, this kind of solar cell there will be the phenomenon of decrease in efficiency in use, this phenomenon is referred to as photo attenuation (Light-induceddegradation:LID), its essence is that boron in silicon crystal and oxygen combine and generates boron oxygen to complex centre, this boron oxygen is to very easily capturing few son, minority carrier life time is declined, efficiency reduces, polycrystalline cell decay ratio is 1% to 2%, and monocrystalline attenuation ratio can reach 3% to 5%.
In prior art, light induced attenuation characteristic studied by the general light source irradiation cell piece of the full spectrum of simulation or the open-air exposure assembly of adopting, but, the experimental period of these two kinds of modes is longer, cell piece photo attenuation tens hours experimental periods or even tens hours, assembly photo attenuation one month to several months experimental period is not etc.
Summary of the invention
For solving the problem, the invention provides a kind of method of solar cell piece fast light induced attenuation, significantly can shorten the photo attenuation experimental period of solar cell piece and assembly.
The method of a kind of solar cell piece fast light induced attenuation provided by the invention, comprising:
Thermal annealing is carried out to solar cell piece;
High intensity of illumination irradiation is carried out to described solar cell piece.
Preferably, in the method for above-mentioned solar cell piece fast light induced attenuation,
Described thermal annealing is carried out to solar cell piece before, also comprise:
Environment residing for described solar cell piece is vacuumized.
Preferably, in the method for above-mentioned solar cell piece fast light induced attenuation,
Described thermal annealing is carried out to solar cell piece before also comprise:
The temperature range arranging described thermal annealing is 200 DEG C to 300 DEG C.
Preferably, in the method for above-mentioned solar cell piece fast light induced attenuation,
Described thermal annealing is carried out to solar cell piece before also comprise:
The time range arranging described thermal annealing is 20 minutes to 30 minutes.
Preferably, in the method for above-mentioned solar cell piece fast light induced attenuation,
Described high intensity of illumination irradiation is carried out to described solar cell piece before also comprise:
The intensity of illumination scope arranging light source is 1*10
3w/m
2to 2*10
3w/m
2.
Preferably, in the method for above-mentioned solar cell piece fast light induced attenuation,
Described high intensity of illumination irradiation is carried out to described solar cell piece before also comprise:
The scope arranging irradiation time is 1 little of 2 hours.
The method of above-mentioned solar cell piece fast light induced attenuation provided by the invention, owing to first carrying out thermal annealing to solar cell piece, can the activity of the inner boron atom of quick active cell piece and oxygen atom, improve its diffusion rate, again high intensity of illumination irradiation is carried out to described solar cell piece, boron atom can be accelerated and oxygen atom is combined into boron oxygen pair, form complex centre, cause photo attenuation, therefore, it is possible to significantly shorten the photo attenuation experimental period of cell piece and assembly.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The schematic diagram of the method for the first solar cell piece fast light induced attenuation that Fig. 1 provides for the embodiment of the present application;
The schematic diagram of the method for the second solar cell piece fast light induced attenuation that Fig. 2 provides for the embodiment of the present application;
The schematic diagram of the method for the third solar cell piece fast light induced attenuation that Fig. 3 provides for the embodiment of the present application.
Embodiment
Core concept of the present invention is a kind of method providing solar cell piece fast light induced attenuation, significantly can shorten the photo attenuation experimental period of cell piece and assembly.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The method of the first solar cell piece fast light induced attenuation that the embodiment of the present application provides as shown in Figure 1, the schematic diagram of the method for the first solar cell piece fast light induced attenuation that Fig. 1 provides for the embodiment of the present application.The method comprises the steps:
S1: thermal annealing is carried out to solar cell piece;
The cell piece sub-elected after carrying out sorting to cell piece, can be placed in thermal annealing stove and carries out by this step, by carrying out thermal anneal process to cell piece, can the activity of the inner boron atom of quick active cell piece and oxygen atom, and improve its diffusion rate.
S2: high intensity of illumination irradiation is carried out to described solar cell piece.
The light source that this step adopts can be xenon lamp or the Halogen lamp LED that can simulate full spectrum, and its light source is fixed, and intensity of illumination can at 1*10
3w/m
2to 2*10
3w/m
2interior adjustment, by carrying out high intensity of illumination process to the cell piece of thermal annealing, can accelerate boron atom and oxygen atom is combined into boron oxygen pair, forms complex centre, causes photo attenuation.
The method of the above-mentioned solar cell piece fast light induced attenuation that the embodiment of the present application provides, owing to first carrying out thermal annealing to solar cell piece, can the activity of the inner boron atom of quick active cell piece and oxygen atom, improve its diffusion rate, again high intensity of illumination irradiation is carried out to described solar cell piece, boron atom can be accelerated and oxygen atom is combined into boron oxygen pair, form complex centre, cause photo attenuation, therefore, it is possible to significantly shorten the photo attenuation experimental period of cell piece and assembly.
The method of the second solar cell piece fast light induced attenuation that the embodiment of the present application provides as shown in Figure 2, the schematic diagram of the method for the second solar cell piece fast light induced attenuation that Fig. 2 provides for the embodiment of the present application.The method comprises the steps:
A1: the environment residing for described solar cell piece is vacuumized;
This step can be carried out in vacuum annealing stove, vacuumizes before thermal annealing, and cell piece just can be prevented to be oxidized because temperature is high in annealing process, eliminates the impact that other may change electric property.
A2: thermal annealing is carried out to solar cell piece;
The cell piece sub-elected after carrying out sorting to cell piece, can be placed in thermal annealing stove and carries out by this step, by carrying out thermal anneal process to cell piece, can the activity of the inner boron atom of quick active cell piece and oxygen atom, and improve its diffusion rate.
A3: high intensity of illumination irradiation is carried out to described solar cell piece.
The light source that this step adopts can be xenon lamp or the Halogen lamp LED that can simulate full spectrum, and its light source is fixed, and intensity of illumination can at 1*10
3w/m
2to 2*10
3w/m
2interior adjustment, cell piece after thermal annealing is placed on the platform in photo attenuation device, the light source of high intensity of illumination is adopted to irradiate, by carrying out high intensity of illumination process to the cell piece of thermal annealing, boron atom can be accelerated and oxygen atom is combined into boron oxygen pair, form complex centre, cause photo attenuation.
The method of above-mentioned the second solar cell piece fast light induced attenuation that the embodiment of the present application provides, significantly can not only shorten the photo attenuation experimental period of cell piece and assembly, can also eliminate the impact that other may change electric property.
The method of the third solar cell piece fast light induced attenuation that the embodiment of the present application provides as shown in Figure 3, the schematic diagram of the method for the third solar cell piece fast light induced attenuation that Fig. 3 provides for the embodiment of the present application.The method comprises the steps:
B1: the temperature range arranging described thermal annealing is 200 DEG C to 300 DEG C;
It should be noted that, be arranged to this temperature range, the activity of the inner boron atom of quick active cell piece preferably and oxygen atom, improves its diffusion rate, is unlikely to again to impact electric property.
B2: the time range arranging described thermal annealing is 20 minutes to 30 minutes;
It should be noted that, be arranged to the time range of this thermal annealing, can ensure that the activity of the inner boron atom of cell piece and oxygen atom is activated, can not impact electric property again.
B3: thermal annealing is carried out to solar cell piece;
B4: high intensity of illumination irradiation is carried out to described solar cell piece.
On the basis of above-mentioned three embodiments, following optimal technical scheme can also be had: described high intensity of illumination irradiation is carried out to described solar cell piece before also comprise: the intensity of illumination scope arranging light source is 1*10
3w/m
2to 2*10
3w/m
2, further, the scope arranging irradiation time is 1 little of 2 hours.Under so high intensity of illumination, optical attenuation speed is improved significantly, several times before can reaching even tens times, and in the 1 little process that just can complete optical attenuation within 2 hours, add the time of 20 minutes to 30 minutes of thermal annealing, be no more than 2.5 hours total processing time, this is just significantly reduced relative to former tens hours even test period of tens hours, and the processing time is short, make cell piece not easily oxidized, the impact on cell piece electric property can be eliminated.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (6)
1. a method for solar cell piece fast light induced attenuation, is characterized in that, comprising:
Thermal annealing is carried out to solar cell piece;
High intensity of illumination irradiation is carried out to described solar cell piece.
2. the method for solar cell piece fast light induced attenuation according to claim 1, is characterized in that,
Described thermal annealing is carried out to solar cell piece before, also comprise:
Environment residing for described solar cell piece is vacuumized.
3. the method for solar cell piece fast light induced attenuation according to claim 1, is characterized in that,
Described thermal annealing is carried out to solar cell piece before also comprise:
The temperature range arranging described thermal annealing is 200 DEG C to 300 DEG C.
4. the method for solar cell piece fast light induced attenuation according to claim 3, is characterized in that, described thermal annealing is carried out to solar cell piece before also comprise:
The time range arranging described thermal annealing is 20 minutes to 30 minutes.
5. the method for the solar cell piece fast light induced attenuation according to any one of claim 1-4, is characterized in that, described high intensity of illumination irradiation is carried out to described solar cell piece before also comprise:
The intensity of illumination scope arranging light source is 1*10
3w/m
2to 2*10
3w/m
2.
6. the method for solar cell piece fast light induced attenuation according to claim 5, is characterized in that, described high intensity of illumination irradiation is carried out to described solar cell piece before also comprise:
The scope arranging irradiation time is 1 little of 2 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510795445.8A CN105261677B (en) | 2015-11-18 | 2015-11-18 | A kind of method of the quick photo attenuation of solar cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510795445.8A CN105261677B (en) | 2015-11-18 | 2015-11-18 | A kind of method of the quick photo attenuation of solar cell piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105261677A true CN105261677A (en) | 2016-01-20 |
| CN105261677B CN105261677B (en) | 2017-08-25 |
Family
ID=55101264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510795445.8A Active CN105261677B (en) | 2015-11-18 | 2015-11-18 | A kind of method of the quick photo attenuation of solar cell piece |
Country Status (1)
| Country | Link |
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| CN (1) | CN105261677B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055005A (en) * | 2017-12-15 | 2018-05-18 | 浙江晶科能源有限公司 | A kind of light decay method of cell piece |
| CN108615790A (en) * | 2018-04-11 | 2018-10-02 | 浙江师范大学 | A method of inhibiting the hot fill-in light induced attenuation of polysilicon PERC batteries |
| CN109004064A (en) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | A kind of production method of p-type cell piece |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN101762779A (en) * | 2010-01-18 | 2010-06-30 | 上海晶澳太阳能光伏科技有限公司 | Photoinduced attenuation testing system of battery sheet and testing method thereof |
| CN202255834U (en) * | 2011-07-15 | 2012-05-30 | 中电电气（南京）光伏有限公司 | Device for quickening photoinduced attenuation of solar battery with crystalline silicon |
| CN102479875A (en) * | 2010-11-30 | 2012-05-30 | 江苏顺风光电科技有限公司 | Solar cell attenuation device |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
-
2015
- 2015-11-18 CN CN201510795445.8A patent/CN105261677B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6251210A (en) * | 1985-08-30 | 1987-03-05 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| CN101478017A (en) * | 2009-01-09 | 2009-07-08 | 中电电气（南京）光伏有限公司 | Light induced attenuation characteristic improving method for crystalline silicon solar cell tablet and dedicated apparatus |
| CN101762779A (en) * | 2010-01-18 | 2010-06-30 | 上海晶澳太阳能光伏科技有限公司 | Photoinduced attenuation testing system of battery sheet and testing method thereof |
| CN102479875A (en) * | 2010-11-30 | 2012-05-30 | 江苏顺风光电科技有限公司 | Solar cell attenuation device |
| CN202255834U (en) * | 2011-07-15 | 2012-05-30 | 中电电气（南京）光伏有限公司 | Device for quickening photoinduced attenuation of solar battery with crystalline silicon |
| CN104078403A (en) * | 2014-07-16 | 2014-10-01 | 常州天合光能有限公司 | Mass production device capable of rapidly reducing light-induced degradation of crystalline silicon solar cells |
| CN104868010A (en) * | 2015-03-03 | 2015-08-26 | 晶澳（扬州）太阳能科技有限公司 | Method for reducing light induced attenuation of P type crystalline silicon solar cells and assemblies thereof by using strong light irradiation |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108055005A (en) * | 2017-12-15 | 2018-05-18 | 浙江晶科能源有限公司 | A kind of light decay method of cell piece |
| CN108615790A (en) * | 2018-04-11 | 2018-10-02 | 浙江师范大学 | A method of inhibiting the hot fill-in light induced attenuation of polysilicon PERC batteries |
| CN109004064A (en) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | A kind of production method of p-type cell piece |
| CN109004064B (en) * | 2018-07-26 | 2020-06-26 | 浙江晶科能源有限公司 | Manufacturing method of P-type battery piece |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105261677B (en) | 2017-08-25 |
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