CN110556449A - Device and method for maintaining performance of heterojunction solar cell and module for long time - Google Patents
Device and method for maintaining performance of heterojunction solar cell and module for long time Download PDFInfo
- Publication number
- CN110556449A CN110556449A CN201810540162.2A CN201810540162A CN110556449A CN 110556449 A CN110556449 A CN 110556449A CN 201810540162 A CN201810540162 A CN 201810540162A CN 110556449 A CN110556449 A CN 110556449A
- Authority
- CN
- China
- Prior art keywords
- heterojunction solar
- solar cell
- light source
- cavity
- infrared heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 238000005286 illumination Methods 0.000 claims abstract description 31
- 239000011261 inert gas Substances 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 9
- 230000007774 longterm Effects 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims 6
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LBZRRXXISSKCHV-UHFFFAOYSA-N [B].[O] Chemical class [B].[O] LBZRRXXISSKCHV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a device and a method for keeping performances of a heterojunction solar cell and a heterojunction solar cell module for a long time, wherein the device comprises a cavity, a light source, an infrared heating system, an inert gas input system, a transmission device and a master controller, the light source comprises an upper light source and a lower light source which are respectively arranged on the top surface and the bottom surface of the cavity, the infrared heating system comprises an upper infrared heating system and a lower infrared heating system which are respectively arranged on the top surface and the bottom surface of the cavity, the inert gas input system comprises an upper inert gas input system and a lower inert gas input system which are respectively arranged on the top surface and the bottom surface of the cavity, and the master controller is respectively electrically connected with the light source, the infrared heating system, the inert gas input system and the transmission device. According to the invention, by means of the method of irradiating and heating short wave bands or ultraviolet light, the efficiency of the heterojunction solar cell or module obtained after continuous illumination is improved and maintained, so that the heterojunction solar cell or module can continuously and efficiently work under subsequent natural illumination.
Description
Technical Field
The invention relates to the technical field of heterojunction solar cells, in particular to a device and a method for keeping performances of a heterojunction solar cell and a module for a long time.
Background
under the trend of reducing the power generation cost, one of the means for reducing the cost in the solar cell industry is to improve the cell efficiency, and the heterojunction solar cell is paid more and more attention as one of the high-efficiency solar cell candidates. However, some performance problems still exist in the heterojunction solar cell, and the problem of the reduction of the photoelectric conversion efficiency of the cell and the efficiency of the photovoltaic module is temporarily discussed here. The literature reports that the N-type crystalline silicon heterojunction solar cell or the component thereof has a happy phenomenon of efficiency improvement under the continuous illumination condition, the improvement effect is very obvious, the company also finds the phenomenon, but then finds another phenomenon, namely: after a certain period of natural illumination (non-continuous illumination), the efficiency improvement of the cell or the assembly under the continuous natural light can be attenuated to the level before the continuous illumination or even lower. The occurrence of the phenomenon can overturn the practicability of the method for improving the efficiency of the N-type crystalline silicon heterojunction solar cell by continuous illumination. Therefore, the improvement of the efficiency obtained after the heterojunction solar cell or the heterojunction solar module is continuously illuminated by what method is maintained, so that the heterojunction solar cell or the heterojunction solar module continuously and efficiently works under subsequent natural illumination (non-continuous illumination) becomes an urgent problem to be solved.
Disclosure of Invention
in view of the above problems, the present invention provides a device and a method for maintaining the performance of a heterojunction solar cell and a heterojunction solar cell module for a long time, so as to maintain the improvement of the efficiency of the heterojunction solar cell or the heterojunction solar cell module obtained after continuous illumination, and to enable the heterojunction solar cell or the heterojunction solar cell module to continuously and efficiently operate under subsequent natural illumination (non-continuous illumination).
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a device for keeping the performance of a heterojunction solar cell and a module for a long time comprises a cavity, a light source, an infrared heating system, an inert gas input system, a transmission device and a master controller, wherein the light source consists of an upper light source and a lower light source which are respectively arranged on the top surface and the bottom surface of the cavity, the infrared heating system consists of an upper infrared heating system and a lower infrared heating system which are respectively arranged on the top surface and the bottom surface of the cavity, the inert gas input system consists of an upper inert gas input system and a lower inert gas input system which are respectively arranged on the top surface and the bottom surface of the cavity, and the master controller is respectively electrically connected with the light source, the infrared heating system, the inert gas input system and the transmission device.
Furthermore, the cavity is a cuboid, and an opening for the heterojunction battery piece or the assembly carrier plate to enter is formed in the cavity.
furthermore, the light source is a light source with adjustable spectrum or a light source with different wave band spectrums which are mixed and are respectively controllable.
Furthermore, the infrared heating system is composed of a temperature detection element, an infrared heating element and a temperature control regulator.
Furthermore, the inert gas input system comprises a gas conveying pipeline and a gas flow control, and the gas conveying pipeline is uniformly distributed on the top surface and the bottom surface of the cavity.
Further, the conveying device comprises a hollow-out support plate of the heterojunction solar cell or a hollow-out support plate of the assembly, a support plate movement position and residence time controller and a conveying track, wherein the conveying track is divided into a cavity inlet section, a cavity inner section and a cavity outlet section.
Further, the master controller controls the spectrum range, the illumination intensity, the illumination time, the infrared heating temperature, the infrared heating time, the inert gas flow and the movement of the conveying device.
A method for maintaining the performance of heterojunction solar cells and modules over an extended period of time, comprising the steps of:
Under the protection of inert gas, a light source with a spectral distribution range from ultraviolet to near infrared is used for illuminating the heterojunction solar cell or the heterojunction solar cell assembly, and infrared heating is simultaneously used for heating the heterojunction solar cell or the heterojunction solar cell assembly;
Maintaining the processing duration of the heterojunction solar cell or the heterojunction solar cell module under the illumination and heating condition for more than 4 seconds;
Turning off infrared heating, and irradiating with light with wavelength of 500nm or more for 1 min.
Further, the illumination intensity of the light source with the spectral distribution range from ultraviolet to near infrared is 0.1-5 suns.
further, the temperature of the heterojunction solar cell or module is maintained at 80-200 ℃.
From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
according to the invention, by means of a method of irradiating and heating short wave bands or ultraviolet light, hydrogen in intrinsic amorphous silicon is combined with a silicon dangling bond on the surface of crystalline silicon and a dangling bond on the contact surface of amorphous silicon more firmly, so that the hydrogen bond and the silicon dangling bond are bonded to reach a stable structure, and further damage of ultraviolet light to the hydrogen bond in future actual illumination is avoided, and thus efficiency loss caused by attenuation of passivation effect of amorphous silicon due to illumination is avoided.
drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a device structure for maintaining the performance of a heterojunction solar cell and module for a long period of time in accordance with the present invention;
FIG. 2 is a schematic structural diagram of a heterojunction solar cell hollow-out carrier plate and a module hollow-out carrier plate according to the present invention;
FIG. 3 is a schematic diagram of a delivery device for a device for maintaining the performance of a heterojunction solar cell and module for an extended period of time in accordance with the present invention;
Figure 4 is a schematic diagram of an embodiment of the device for long term retention of the performance of heterojunction solar cells and modules of the invention.
Detailed Description
in order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1-3, a device for maintaining the performance of a heterojunction solar cell and a heterojunction solar cell module for a long time comprises a cavity 5, a light source 1, an infrared heating system 2, an inert gas input system 3, a transmission device 4 and a master controller 6, wherein the cavity 5 is a cuboid, an opening 7 for a heterojunction cell or module carrier plate to enter is formed in the cavity 5, the light source 1 comprises an upper light source 1a and a lower light source 1b respectively arranged on the top surface and the bottom surface of the cavity, the infrared heating system 2 comprises an upper infrared heating system 2a and a lower infrared heating system 2b respectively arranged on the top surface and the bottom surface of the cavity, the inert gas input system 3 comprises an upper inert gas input system 3a and a lower inert gas input system 3b respectively arranged on the top surface and the bottom surface of the cavity, and the master controller 6 is respectively connected with the light source 1, the infrared heating system 2, the inert gas input system 3, the transmission device 4 is electrically connected, and the master controller 6 controls the spectrum range, the illumination intensity, the illumination time, the infrared heating temperature, the infrared heating time, the inert gas flow and the transmission device to move.
The light source 1 is a light source with adjustable spectrum or a light source with different wave band spectrum mixing and respectively controllable, the infrared heating system 2 is composed of a temperature detection element, an infrared heating element and a temperature control regulator, the inert gas input system 3 comprises a gas conveying pipeline and gas flow control, the gas conveying pipeline is uniformly distributed on the top surface and the bottom surface of the cavity 1, the conveying device 4 comprises a heterojunction solar cell hollow-out support plate 4a or a component hollow-out support plate 4b, a support plate movement position and residence time controller 4c and a conveying track 4d, and the conveying track 4d is divided into a cavity inlet section 41, a cavity inner section 42 and a cavity outlet section 43.
A method for maintaining the performance of heterojunction solar cells and modules over an extended period of time, comprising the steps of:
Under the protection of inert gas, illuminating the heterojunction solar cell or module 8 by using a light source with a spectral distribution range from ultraviolet to near infrared, wherein the illumination intensity of the light source with the spectral distribution range from ultraviolet to near infrared is 0.1-5suns, and simultaneously heating the heterojunction solar cell or module 8 by infrared heating, wherein the temperature of the heterojunction solar cell or module 8 is kept at 80-200 ℃;
maintaining the duration of the treatment of the heterojunction solar cell or module 8 under the illumination and heating conditions for more than 4 seconds;
turning off infrared heating, and irradiating with light with wavelength of 500nm or more for 1 min.
researches show that a main factor of the efficiency attenuation of the heterojunction solar cell under illumination is that the chemical passivation effect of the interface of the intrinsic amorphous silicon and the crystalline silicon is damaged by light, especially ultraviolet light. The damage can be recovered again after the annealing in the dark room. The metastable passivation state is similar to the light-induced attenuation phenomenon caused by boron oxidation recombination centers in a conventional p-type cell, and the difference is that the light-induced attenuation phenomenon is different from the light-induced attenuation phenomenon, namely that the light-induced attenuation phenomenon is ultraviolet light and that the light-induced attenuation phenomenon is long-wavelength band light. As is known, the current method for inhibiting the photoinduced attenuation caused by boron-oxygen recombination centers in the traditional battery is to irradiate a xenon lamp or a long-wave band laser and heat the xenon lamp or the long-wave band laser at the same time so as to passivate metastable boron-oxygen pairs in the anti-reflection film silicon nitride by hydrogen and inhibit the generation of boron-oxygen compounds. The passivation effect of the doped amorphous silicon on the crystalline silicon is obviously improved under the condition of continuous illumination (light with wavelength longer than that of blue light), the generation of the effect is caused by the injection of photogenerated carriers, and the enhanced passivation can be kept in the dark for at least more than 1 day.
According to the invention, by means of a method of irradiating and heating short wave bands or ultraviolet light, hydrogen in intrinsic amorphous silicon is combined with a silicon dangling bond on the surface of crystalline silicon and a dangling bond on the contact surface of amorphous silicon more firmly, so that the hydrogen bond and the silicon dangling bond are bonded to reach a stable structure, and further damage of ultraviolet light to the hydrogen bond in future actual illumination is avoided, and thus efficiency loss caused by attenuation of passivation effect of amorphous silicon due to illumination is avoided.
Examples
Referring to fig. 2-4, a method of maintaining the performance of a heterojunction solar cell and module for long periods of time, comprising the steps of:
placing the heterojunction solar cell 8 in a cavity 5 with a nitrogen (N2) gas protection system, illuminating the heterojunction solar cell 8 by using light sources 1a and 1b with spectral distribution ranges of 100 and 500nm wavelength respectively arranged at the top and the bottom of the cavity 5, wherein the illumination intensity is 0.5-5suns, and simultaneously heating the heterojunction solar cell 8 by using infrared heating systems 2a and 2b respectively arranged at the top and the bottom of the cavity 5, and the heating temperature is 90-200 ℃;
Keeping the duration of the treatment of the heterojunction solar cell 8 under the illumination and heating conditions to be 5-60 minutes;
turning off the infrared heating systems 2a and 2b, performing light irradiation treatment with light irradiation of 0.5-5suns for 10-500 minutes by using the light sources 1c and 1d with the wavelength of 500-.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A device for maintaining the performance of heterojunction solar cells and modules over an extended period of time, comprising: the solar cell module comprises a cavity, a light source, an infrared heating system, an inert gas input system, a conveying device and a master controller, wherein the light source consists of an upper light source and a lower light source which are respectively positioned on the top surface and the bottom surface of the cavity, the infrared heating system consists of an upper infrared heating system and a lower infrared heating system which are respectively positioned on the top surface and the bottom surface of the cavity, the inert gas input system consists of an upper inert gas input system and a lower inert gas input system which are respectively positioned on the top surface and the bottom surface of the cavity, and the master controller is respectively electrically connected with the light source, the infrared heating system, the inert gas input system and the conveying device.
2. The device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the cavity is a cuboid, and an opening for the heterojunction battery piece or the assembly carrier plate to enter is formed in the cavity.
3. The device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the light source is a light source with adjustable spectrum or a light source with different wave band spectrums which are mixed and can be controlled respectively.
4. The device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the infrared heating system is composed of a temperature detection element, an infrared heating element and a temperature control regulator.
5. the device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the inert gas input system comprises a gas conveying pipeline and a gas flow control device, and the gas conveying pipeline is uniformly distributed on the top surface and the bottom surface of the cavity.
6. The device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the conveying device comprises a hollow-out support plate or a hollow-out support plate of the heterojunction solar cell, a support plate movement position and residence time controller and a conveying track, wherein the conveying track is divided into a cavity inlet section, a cavity inner section and a cavity outlet section.
7. the device of claim 1 for long term maintenance of heterojunction solar cells and modules performance, wherein: the master controller controls the spectrum range, the illumination intensity, the illumination time, the infrared heating temperature, the infrared heating time, the inert gas flow and the movement of the conveying device.
8. A method for maintaining the performance of heterojunction solar cells and modules over an extended period of time, comprising: the method comprises the following steps:
Under the protection of inert gas, a light source with a spectral distribution range from ultraviolet to near infrared is used for illuminating the heterojunction solar cell or the heterojunction solar cell assembly, and infrared heating is simultaneously used for heating the heterojunction solar cell or the heterojunction solar cell assembly;
maintaining the processing duration of the heterojunction solar cell or the heterojunction solar cell module under the illumination and heating condition for more than 4 seconds;
Turning off infrared heating, and irradiating with light with wavelength of 500nm or more for 1 min.
9. The apparatus and method of claim 8 for maintaining the performance of heterojunction solar cells and modules for long periods of time, wherein: the light intensity of the light source with the spectral distribution range from ultraviolet to near infrared is 0.1-5 suns.
10. The apparatus and method of claim 8 for maintaining the performance of heterojunction solar cells and modules for long periods of time, wherein: the temperature of the heterojunction solar cell or module is maintained at 80-200 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810540162.2A CN110556449A (en) | 2018-05-30 | 2018-05-30 | Device and method for maintaining performance of heterojunction solar cell and module for long time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810540162.2A CN110556449A (en) | 2018-05-30 | 2018-05-30 | Device and method for maintaining performance of heterojunction solar cell and module for long time |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110556449A true CN110556449A (en) | 2019-12-10 |
Family
ID=68735065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810540162.2A Pending CN110556449A (en) | 2018-05-30 | 2018-05-30 | Device and method for maintaining performance of heterojunction solar cell and module for long time |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110556449A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146308A (en) * | 2019-12-16 | 2020-05-12 | 浙江爱旭太阳能科技有限公司 | Light source regeneration furnace and method for reducing efficiency attenuation of PERC double-sided battery |
| CN111564532A (en) * | 2020-04-03 | 2020-08-21 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| CN116914032A (en) * | 2023-09-11 | 2023-10-20 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005217244A (en) * | 2004-01-30 | 2005-08-11 | Advanced Lcd Technologies Development Center Co Ltd | Substrate treatment method, manufacturing method of semiconductor device, and hydrotreating device |
| US20100062561A1 (en) * | 2006-11-02 | 2010-03-11 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
| CN102487101A (en) * | 2010-12-02 | 2012-06-06 | 理想能源设备有限公司 | Pretreatment apparatus and pretreatment method |
| CN202808935U (en) * | 2012-09-21 | 2013-03-20 | 蚌埠玻璃工业设计研究院 | Device for improving optical-induced degradation of amorphous silicon membrane |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
-
2018
- 2018-05-30 CN CN201810540162.2A patent/CN110556449A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005217244A (en) * | 2004-01-30 | 2005-08-11 | Advanced Lcd Technologies Development Center Co Ltd | Substrate treatment method, manufacturing method of semiconductor device, and hydrotreating device |
| US20100062561A1 (en) * | 2006-11-02 | 2010-03-11 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
| CN102487101A (en) * | 2010-12-02 | 2012-06-06 | 理想能源设备有限公司 | Pretreatment apparatus and pretreatment method |
| CN103650170A (en) * | 2011-06-27 | 2014-03-19 | 原子能与替代能源委员会 | Process for treating a heterojunction photovoltaic cell |
| CN202808935U (en) * | 2012-09-21 | 2013-03-20 | 蚌埠玻璃工业设计研究院 | Device for improving optical-induced degradation of amorphous silicon membrane |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146308A (en) * | 2019-12-16 | 2020-05-12 | 浙江爱旭太阳能科技有限公司 | Light source regeneration furnace and method for reducing efficiency attenuation of PERC double-sided battery |
| CN111564532A (en) * | 2020-04-03 | 2020-08-21 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| CN111564532B (en) * | 2020-04-03 | 2023-02-17 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| CN116914032A (en) * | 2023-09-11 | 2023-10-20 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
| CN116914032B (en) * | 2023-09-11 | 2023-11-24 | 苏州莱德新能源科技有限公司 | Light injection equipment and method for microcrystalline heterojunction solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100147383A1 (en) | Method and apparatus for laser-processing a semiconductor photovoltaic apparatus | |
| CN110556449A (en) | Device and method for maintaining performance of heterojunction solar cell and module for long time | |
| Luque et al. | Photovoltaic concentration at the onset of its commercial deployment | |
| US8828769B2 (en) | Energy conversion device | |
| WO2010104842A1 (en) | Multi-junction semiconductor photovoltaic apparatus and methods | |
| Yoshimi et al. | High efficiency thin film silicon hybrid solar cell module on 1 m/sup 2/-class large area substrate | |
| JP5901755B2 (en) | Method for quickly stabilizing the rated output of thin-film solar modules | |
| US20100116318A1 (en) | Pixelated photovoltaic array method and apparatus | |
| CN111509091B (en) | Battery edge passivation method | |
| CN104505427A (en) | Method and device for improving LID and PID of crystalline silicon solar cell piece | |
| CN111509090A (en) | Battery edge passivation method | |
| Lee et al. | Fabrication of high-efficiency silicon solar cells by ion implant process | |
| CN102005501A (en) | Phosphorous diffusion method for producing solar cell | |
| CN107560442B (en) | LED anti-light-decay furnace cooling system | |
| US20150270431A1 (en) | Apparatus and method for performance recovery of laminated photovoltaic module | |
| CN209105099U (en) | A kind of big-power solar solar panel | |
| Khvostikov et al. | Ge-Based Photovoltaic Laser-Power Converters | |
| CN105261677A (en) | Method for rapid light-induced degradation of solar cell piece | |
| TW201340366A (en) | Method for producing optimized solar cells | |
| Zhao et al. | High efficiency rear emitter pert cells on CZ and FZ n-type silicon substrates | |
| US10658534B2 (en) | Bi-facial photovoltaic power generation module | |
| Shukla et al. | Solar photovoltaic energy: the state-of-art | |
| Avoyan | Alternative energy: the comparative analysis of solar flat and concentrator photovoltaics | |
| Alami et al. | Manufacturing of Silicon Solar Cells and Modules | |
| CN114613669B (en) | Method and device for repairing battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191210 |