CN111162143B - High-efficiency PERC solar cell and preparation method thereof - Google Patents
High-efficiency PERC solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a preparation method of a high-efficiency PERC solar cell, which comprises the following steps: sequentially performing texturing, diffusion and etching on the silicon wafer, forming an antireflection film and a passivation film, and screen printing electrode slurry to obtain a solar cell blank; and then, drying, sintering, annealing, illuminating and cooling the solar cell blank in sequence to obtain a PERC solar cell finished product. Correspondingly, the invention also discloses a high-efficiency PERC solar cell. According to the invention, through the processes of primary high-temperature annealing, illumination-assisted secondary annealing and cooling after firing, hydrogen, metal impurities and B-O complexes in the solar cell are effectively activated in the former stage, and the regeneration and recovery of the H and B-O complexes from an unstable state to a passivation stable state are effectively promoted in the latter stage, so that the CID attenuation rate of the PERC solar cell is effectively reduced, and the conversion efficiency is improved. By the preparation method, the CID average attenuation rate can be reduced to below 1%, and the absolute value of the efficiency of the solar cell is improved by 0.1-0.3%.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a high-efficiency PERC solar cell and a preparation method thereof.
Background
At present, mainstream products in the solar Cell industry are upgraded from traditional Al-BSF (aluminum back surface field contact) cells to PERC (Passivated Emitter Rear Cell) solar cells, a PERC back passivation film is added on the back, and contact is optimized from full contact to back local point contact, so that back recombination loss of the solar cells is greatly reduced, the open-circuit voltage of the solar cells is improved, the efficiency of the solar cells is obviously improved, and the general efficiency of the conventional mass-produced PERC solar cells can reach more than 21%. However, the expectation of conversion efficiency of solar cells is not limited to this, and the improvement of conversion efficiency of PERC cells currently faces a great challenge.
During the use process of the PERC solar cell, a power attenuation phenomenon is easily generated, namely, the conversion efficiency of the solar cell is reduced along with the prolonging of the use time. It is studied to be mainly caused by Carrier Induced Degradation (CID). The CID attenuation rate of the PERC solar cell after conventional sintering treatment can reach 2-5%, and the power level of the solar cell after packaging is seriously influenced.
At present, no consensus is achieved on the attenuation mechanism caused by the current carriers, and the CID mechanism in the photovoltaic industry is presumed to have the following reasons: 1) Light induced attenuation (LID): the power attenuation caused by the battery in the illumination process is generally considered in the industry that LID is mainly caused by boron-oxygen complex and ferroboron; the attenuation can reach 3-7%, and some attenuation can even reach 10%; 2) Photothermal attenuation (leitd): the power attenuation of the battery caused by high temperature and illumination conditions can reach about 10%; 3) Hydrogen induced attenuation (HID), wherein hydrogen bonds of passivated impurities and defective parts are easily damaged by high temperature and/or illumination, enter a silicon wafer body and induce to form a composite center to cause attenuation; 4) The metal is dissolved and dispersed, metal precipitates are dispersed to form interstitial metal ions in the high-temperature fast-firing process, and metal atoms can activate impurities to cause attenuation. In the prior art, studies on LID and coping strategies thereof are more, but studies on coping strategies for CID are less. Therefore, how to effectively reduce CID and further improve the conversion efficiency of the PERC solar cell is a technical problem that needs to be solved in the field.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a method for manufacturing a high efficiency PERC solar cell, which can effectively reduce CID attenuation of the solar cell and improve conversion efficiency thereof.
The invention also provides a high-efficiency PERC solar cell with high conversion efficiency.
In order to solve the above technical problems, the present invention provides a method for manufacturing a high efficiency PERC solar cell, comprising:
(1) Providing a silicon wafer, sequentially performing texturing, diffusion and etching on the silicon wafer, forming an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell blank;
(3) Sintering the dried solar cell blank;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
(6) Cooling the solar cell blank to obtain a PERC solar cell finished product;
the lowest temperature of the first temperature range > the lowest temperature of the second temperature range.
As an improvement of the technical scheme, in the step (2), the drying temperature is 50-600 ℃, and the drying time is 10-120s;
in the step (3), the sintering temperature is 400-1000 ℃, and the sintering time is 5-100s;
in the step (4), the first temperature range is 300-1000 ℃, and the first time is 20-600s;
in the step (5), the second temperature range is 20-500 ℃, and the illumination intensity range of the illumination treatment is 20-150kW/m 2 The second time is 10-600s;
in the step (6), the cooling rate is 2-30 ℃/s, and the cooling time is 5-90s.
As an improvement of the technical scheme, in the step (2), the drying temperature is 200-400 ℃, and the drying time is 10-60s;
in the step (3), the sintering temperature is 500-900 ℃, and the sintering time is 5-30s;
in the step (4), the first temperature range is 300-900 ℃, and the first time is 50-120s;
in the step (5), the second temperature range is 100-400 ℃, and the second time is 30-300s;
in the step (6), the cooling time is 10-60s.
As an improvement of the technical scheme, in the steps (3) and (4), the temperatures of the upper surface and the lower surface of the solar cell blank are different;
in the steps (2), (5) and (6), the temperatures of the upper surface and the lower surface of the solar cell blank are the same.
As an improvement of the technical scheme, in the step (4), the temperature of the sintered solar cell blank is reduced to 200-300 ℃ from 800-1000 ℃ in a gradient manner, and the temperature reduction time is 50-120s.
As an improvement of the technical scheme, the step (4) comprises the following steps:
(4.1) annealing the sintered solar cell blank to 200-300 ℃ from 800-1000 ℃;
(4.2) heating the solar cell blank to 500-700 ℃;
(4.3) cooling the solar cell blank to 200-300 ℃;
the total processing time of the step (4) is 50-120s.
As an improvement of the technical scheme, in the step (5), the temperature of the solar cell is reduced from 300-500 ℃ to 50-250 ℃ in a gradient manner, and the temperature reduction time is 30-300s.
As an improvement of the technical scheme, the step (5) comprises the following steps:
(5.1) cooling the solar cell blank body to 100-250 ℃ from 300-500 ℃ in a gradient way;
(5.2) keeping the temperature of the solar cell blank constant at 100-250 ℃;
the total processing time of the step (5) is 30-300s.
As an improvement of the technical scheme, the step (5) comprises the following steps:
(5.1) cooling the solar cell blank body to 150-250 ℃ from 300-500 ℃ in a gradient way;
(5.2) heating the solar cell blank from 150-250 ℃ to 170-300 ℃;
(5.3) keeping the temperature of the solar cell blank constant at 170-300 ℃;
the total processing time of the step (5) is 30-300s.
Correspondingly, the invention also discloses a high-efficiency PERC solar cell which is prepared by adopting the preparation method.
The implementation of the invention has the following beneficial effects:
the invention provides a preparation method of a high-efficiency PERC solar cell, which effectively activates hydrogen, metal impurities and a B-O complex in the solar cell in the early stage through the processes of primary high-temperature annealing, illumination-assisted secondary annealing and cooling after firing, effectively promotes the regeneration and recovery of the H and B-O complex from an unstable state to a passivation stable state in the later stage, effectively reduces the CID attenuation rate of the PERC solar cell, and improves the conversion efficiency. By the preparation method, the CID average attenuation rate can be reduced to below 1%, and the absolute value of the efficiency of the solar cell is improved by 0.1-0.3%.
Drawings
Fig. 1 is a flow chart of a method for manufacturing a PERC solar cell according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It is only noted that the invention is intended to be limited to the specific forms set forth herein, including any reference to the drawings, as well as any other specific forms of embodiments of the invention.
The invention provides a preparation method of a high-efficiency PERC solar cell, which comprises the following steps with reference to FIG. 1:
s1: providing a silicon wafer, sequentially performing texturing, diffusion and etching on the silicon wafer, forming an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
specifically, S1 includes:
s11, providing a silicon wafer, and forming a textured surface on the silicon wafer;
the silicon wafer can be P-type silicon or N-type silicon; cleaning and polishing a silicon wafer before texturing, and then corroding the silicon wafer for texturing;
s12: performing high sheet resistance diffusion on the front side of the silicon wafer to form a PN junction;
s13: carrying out selective laser doping on the front side of the silicon wafer;
s14: etching to remove byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back of the silicon wafer;
if phosphorus is adopted to diffuse to form N-type silicon on the front surface of the silicon wafer, the byproduct is phosphorosilicate glass;
if boron is adopted to diffuse on the front surface of the silicon wafer to form P-type silicon, the by-product is borosilicate glass.
S15: depositing a passivation film on the back of the silicon wafer;
the passivation film is preferably a silicon dioxide film, an aluminum oxide film, a silicon nitride film, or a composite film composed of the above films, but is not limited thereto.
S16: depositing a passivation film and an anti-reflection film on the front surface of the silicon wafer;
the passivation film is a silicon dioxide film, an aluminum oxide film or a silicon nitride film; the antireflective film is a silicon nitride film or a silicon dioxide film, but is not limited thereto.
S17: and carrying out laser grooving on the passivation film and the protection film on the back of the silicon wafer.
S18: screen printing the slurry;
the electrode slurry comprises silver powder, an organic carrier and glass powder; wherein the organic carrier can adopt a mixture of esters, alcohols and a thickening agent, and the proportion of the organic carrier is 15-20%; the glass powder is mainly inorganic oxide (such as PbO, B) 2 O 3 、SiO 2 、Bi 2 O 3 ZnO, etc.) in a proportion of 5 to 10%; the silver powder accounts for more than 80 percent.
S2: drying the solar cell blank;
the drying can volatilize and decompose organisms in the slurry, and avoid the reaction of the organisms and the battery, so that the ohmic contact between the electrode and the battery is poor. Specifically, the drying temperature is 50-600 ℃, and the drying time is 10-120s; preferably, the drying temperature is 200-400 ℃, and the drying time is 10-60s. Wherein, the drying time refers to the total time of the drying process.
Further, in order to improve the drying effect, the temperature gradient is set in the drying process, that is, the temperature is set to be in gradient rise.
Furthermore, the drying process is performed in a nitrogen, argon or other inert gas atmosphere to prevent more O from being introduced into the silicon wafer, to form more B-O complexes, and to reduce the conversion efficiency of the solar cell.
S3: sintering the dried solar cell blank;
in the sintering process, organic components in the electrode slurry are further volatilized and decomposed, and the silicon nitride film layer is corroded by the glass phase, so that the electrode slurry and the silicon wafer are co-melted at high temperature to form ohmic contact. Specifically, the sintering temperature is 400-1000 ℃, and when the sintering temperature is higher than 1000 ℃, the glass layer becomes thicker, the contact resistance becomes larger, the filling factor is reduced, and the efficiency of the solar cell is reduced. Preferably, the sintering temperature is 500-900 ℃. Wherein the sintering time is 5-100s, preferably 5-30s. Specifically, the sintering time refers to the total time of the sintering process, not just the holding time.
Further, in order to optimize the sintering result, in the invention, the temperature of the upper surface and the lower surface of the battery piece blank in the sintering process is controlled to be different, specifically, the temperature of the lower surface is greater than that of the upper surface, and more specifically, the temperature of the upper surface-the temperature of the upper surface =20-40 ℃. The arrangement can ensure that the front electrode slurry (silver paste) and the back electrode slurry (containing partial aluminum) with different components are fully sintered, thereby achieving good sintering effect; the silicon wafer can be effectively prevented from warping; in addition, the back side aluminum oxide passivation layer contains a large amount of H, the temperature of the lower surface is high, partial invalid H can be discharged, and CID attenuation caused by the invalid H is reduced.
In addition, the sintering process is performed in a nitrogen, argon or other inert gas atmosphere to prevent more O from being introduced into the silicon wafer, forming more B-O complexes, and reducing the conversion efficiency of the solar cell.
S4: annealing the sintered solar cell blank within a first temperature range for a first time;
wherein the first temperature range is 300-1000 ℃, and the first time is 20-600s; preferably, the first temperature range is 300-900 ℃ and the first time is 50-120s. And the internal defects of the solar cell are fully repaired or converted into a low composite structure by high-temperature annealing.
Further, in order to optimize the annealing result, in the invention, the temperatures of the upper surface and the lower surface of the battery piece blank are controlled to be different in the annealing process, specifically, the temperature of the lower surface is greater than that of the upper surface, and more specifically, the temperature of the upper surface-the temperature of the upper surface =20-40 ℃.
The temperature program of the annealing also affects the conversion efficiency of the solar cell. Specifically, in an embodiment of the invention, the temperature of the sintered solar cell blank is reduced from 800-1000 ℃ to 200-300 ℃ in a gradient manner, and the temperature reduction time is 50-120s. The gradient cooling refers to maintaining a higher temperature in one time period, and then reducing to a lower temperature in the next time period, and maintaining the temperature. The cooling curve is beneficial to fully playing the passivation role of high-temperature annealing.
In another embodiment of the invention, the temperature profile of the anneal is as follows:
(1) Annealing the sintered solar cell blank to 200-300 ℃ from 800-1000 ℃;
specifically, the temperature of the solar cell blank is reduced from 800-1000 ℃ to 200-300 ℃ in a gradient manner within 20-60 s.
(2) Heating the solar cell blank to 500-700 ℃;
specifically, heating the solar cell blank to 500-700 ℃ within 15-60 s;
(3) Cooling the solar cell blank to 200-300 ℃;
specifically, cooling a solar cell blank to 200-300 ℃ within 15-60 s;
further, the total processing time of the step S4 is controlled to be 50-120S. The high-temperature annealing process can fully repair or convert the internal defects of the solar cell into a low composite structure.
Further, the annealing process is performed in a nitrogen, argon or other inert gas atmosphere to prevent more O from being introduced into the silicon wafer, to form more B-O complexes, and to reduce the conversion efficiency of the solar cell.
It should be noted that in the conventional solar cell production process, high-temperature annealing is also performed, and the main function of the annealing is to reduce Light Induced Degradation (LID). But carrier decay (CID) is different from Light Induced Decay (LID). The generation mechanism and the test method of the two are different. For the aspect of generation mechanism, the current academia has clear understanding on the generation mechanism of LID, mainly boron-oxygen pair and boron-iron pair defects in silicon materials; however, there is no clear conclusion about the mechanism of CID generation, and there is no clear conclusion about the relationship between LID and CID. The test conditions are also different for the test methods. The LID test conditions were: 1) The illumination intensity is 1000 +/-50W; 2) The light attenuation is set to be 5kW & h or 30kW & h; 3) The sample temperature was adjusted to 60-70 ℃. The test conditions for CID are: the solar cell was placed in a closed dark room at 110 ℃ and treated for 8h under continuous forward current energization at 0.5A. Although the difference between the two is large, it is certain that both LID and CID have a great influence on the performance of the solar cell, and both need to be processed. However, in the conventional literature, processing of LIDs is often focused on, and processing of CIDs is often ignored. The inventor finds that LID is reduced to about 1% after LID treatment, but CID can still reach 2-4%. In order to further process CID, the invention also comprises the following steps:
s5: carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
specifically, the second temperature range is 20-500 deg.C, and the illumination intensity of the illumination treatment is 20-150kW/m 2 The second time is 10-600s; preferably, the second temperature is in the range of 100-400 ℃ and the second time is in the range of 30-300s. Through light source radiation annealing, hydrogen atoms in the passivation film layer structure on the front surface and the back surface of the PERC battery can be fully activated and converted into H with higher passivation activity - The ions passivate impurities and defects in the silicon wafer, so that the minority carrier lifetime in the solar cell is effectively prolonged, the conversion efficiency of the solar cell is improved, and the passivated PERC solar cell has stable low CID attenuation characteristics.
Further, in the above step, the temperature is controlled to be varied within a range to promote the treatment effect. Specifically, in an embodiment of the present invention, the temperature of the solar cell is decreased from 300-500 ℃ to 50-250 ℃ in a gradient manner, and the temperature decrease time is 30-300s. Wherein, the gradient cooling means that a higher temperature is maintained in a time period, and then the temperature is reduced to a lower temperature in the next time period and maintained. Each time period is the same.
In another embodiment of the present invention, the temperature program of the light irradiation treatment is as follows:
(1) Cooling the solar cell blank to 100-250 ℃ from 300-500 ℃ in a gradient way;
specifically, the temperature of the solar cell blank is reduced to 100-250 ℃ from 300-500 ℃ in a gradient way within 15-200 s; preferably, the temperature of the solar cell blank is reduced from 300-350 ℃ to 220-250 ℃ in a gradient manner within 40-80 s.
(2) Maintaining the temperature of the solar cell blank body to be constant at 100-250 ℃;
specifically, the treatment time of this step is 10 to 120s, preferably 20 to 40s.
In yet another embodiment of the present invention, the temperature program for the light treatment is as follows:
(1) Cooling the solar cell blank to 150-250 ℃ from 300-500 ℃ in a gradient manner;
specifically, the temperature of a solar cell blank is reduced to 100-250 ℃ from 300-500 ℃ in a gradient way within 15-200 s; preferably, the temperature of the solar cell blank is reduced from 300-350 ℃ to 220-250 ℃ in a gradient way within 40-80 s.
(2) Heating the solar cell blank from 150-250 ℃ to 170-300 ℃;
specifically, within 2-50s, heating the solar cell blank from 150-250 ℃ to 170-300 ℃; preferably, the temperature of the solar cell blank is increased from 200-250 ℃ to 240-280 ℃ within 5-15 s.
(3) Maintaining the temperature of the solar cell blank body to be 170-300 ℃ constant;
specifically, the treatment time of this step is 2 to 100s, preferably 10 to 30s.
It should be noted that the total processing time is controlled to be 30-300s regardless of the temperature program used in the light irradiation processing stage.
S6: cooling the solar cell blank to obtain a PERC solar cell finished product;
specifically, the cooling rate is 2-30 ℃/s, and the cooling time is 5-90s; preferably, the cooling time is 10-60s. After cooling, the temperature of the solar cell sheet reaches below 50 ℃, so that the internal defects of the solar cell are fully precipitated and reach a stable state;
correspondingly, the invention also discloses a high-efficiency PERC solar cell, which is prepared by adopting the preparation method.
The invention is further illustrated by the following specific examples:
example 1
The embodiment provides a method for preparing a high-efficiency PERC solar cell, which includes:
(1) Providing a silicon wafer, sequentially texturing, diffusing and etching the silicon wafer to form an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell blank;
specifically, the drying temperature curve is as follows: drying at 160-200-240-280 deg.c for 40 sec;
(3) Sintering the dried solar cell blank;
specifically, in the sintering process, the temperature curve is set to be 650-750-850-950 ℃; the sintering time is 30s;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time;
specifically, in the annealing process, the temperature curve is set to be 700-600-500-400 ℃; the treatment time was 90s;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
specifically, in the illumination treatment process, the illumination intensity of the LED is 60kW/m 2 (ii) a The temperature profile was set as: 350-330-310-290-270-250-230-210 ℃ for 80s.
(6) Cooling the solar cell to obtain a PERC solar cell finished product;
the cooling rate is 6 ℃/s, the treatment time is 30s, and the temperature is reduced to the room temperature.
Example 2
The embodiment provides a method for preparing a high-efficiency PERC solar cell, which includes:
(1) Providing a silicon wafer, sequentially texturing, diffusing and etching the silicon wafer to form an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell blank;
specifically, the drying temperature curve is as follows: the drying time is 25s at the temperature of between 260 and 280 and 320 to 360 ℃;
(3) Sintering the dried solar cell blank;
specifically, in the sintering process, the temperature curve of the upper surface of the solar cell blank is set to be 530-630-730-830 ℃; the temperature profile of the lower surface was set as: 630-730-830-930 ℃; the sintering time is 30s;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time;
specifically, in the annealing process, the temperature curve of the upper surface of the solar cell blank is set to be 600-500-400-300 ℃; the temperature profile of the lower surface was set as: 630-520-420-320 ℃; the treatment time was 90s;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
specifically, in the illumination treatment process, the illumination intensity of the LED is 60kW/m 2 (ii) a The temperature profile was set as: 330-310-290-270-250-230 ℃ for 80s.
(6) Cooling the solar cell to obtain a PERC solar cell finished product;
the temperature reduction rate is 7 ℃/s, the treatment time is 30s, and the temperature is reduced to the room temperature.
Example 3
The embodiment provides a method for preparing a high-efficiency PERC solar cell, which includes:
(1) Providing a silicon wafer, sequentially texturing, diffusing and etching the silicon wafer to form an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell blank;
specifically, the drying temperature curve is as follows: the drying time is 25s at the temperature of between 260 and 280 and 320 to 360 ℃;
(3) Sintering the dried solar cell blank;
specifically, in the sintering process, the temperature curve of the upper surface of the solar cell blank is set to be 530-630-730-830 ℃; the temperature profile of the lower surface was set as: 630-730-830-930 ℃; the sintering time is 30s;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time;
specifically, in the annealing process, the temperature curve of the upper surface of the solar cell blank is set to be 600-300-500-300 ℃; the temperature profile of the lower surface was set as: 630-320-520-320 ℃; the treatment time was 90s;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
specifically, in the illumination treatment process, the illumination intensity of the LED is 60kW/m 2 (ii) a The temperature profile was set as: 330-310-290-270-250-240-260 ℃ for 80s.
(6) Cooling the solar cell to obtain a PERC solar cell finished product;
the cooling rate is 7 ℃/s, the treatment time is 30s, and the temperature is reduced to the room temperature.
Example 4
The embodiment provides a method for preparing a high-efficiency PERC solar cell, which includes:
(1) Providing a silicon wafer, sequentially performing texturing, diffusion and etching on the silicon wafer, forming an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell blank;
specifically, the drying temperature curve is as follows: the drying time is 25s at the temperature of between 260 and 280 and 320 to 360 ℃;
(3) Sintering the dried solar cell blank;
specifically, in the sintering process, the temperature curve of the upper surface of the solar cell blank is set to be 530-630-730-830 ℃; the temperature profile of the lower surface was set as: 630 ℃ -730 ℃ -830 ℃ -930 ℃; the sintering time is 25s;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time;
specifically, in the annealing process, the temperature curve of the upper surface of the solar cell blank is set to be 600-500-400-350 ℃; the temperature profile of the lower surface was set as: 630-520-420-370 ℃; the treatment time was 75s;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time;
specifically, in the illumination treatment process, the illumination intensity of the LED is 60kW/m 2 (ii) a The temperature profile was set as: 330-310-290-270-250-240-260 ℃ for 80s.
(6) Cooling the solar cell to obtain a PERC solar cell finished product;
the cooling rate is 7 ℃/s, the treatment time is 30s, and the temperature is reduced to the room temperature.
The solar cells of examples 1-4 were tested and the results were as follows:
| conversion efficiency (%) | CID(％) | |
| Example 1 | 22.424％ | 1.05％ |
| Example 2 | 22.463％ | 0.96％ |
| Example 3 | 22.518％ | 0.73％ |
| Example 4 | 22.503％ | 0.85％ |
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A method for preparing a high-efficiency PERC solar cell is characterized by comprising the following steps:
(1) Providing a silicon wafer, sequentially texturing, diffusing and etching the silicon wafer to form an antireflection film and a passivation film, and screen-printing electrode slurry to obtain a solar cell blank;
(2) Drying the solar cell green body;
(3) Sintering the dried solar cell blank;
(4) Annealing the sintered solar cell blank within a first temperature range for a first time; wherein the first temperature range is 300-1000 ℃, and the first time is 20-600s;
(5) Carrying out illumination treatment on the annealed solar cell blank within a second temperature range for a second time; wherein the second temperature range is 20-500 deg.C, and the illumination intensity of the illumination treatment is 20-150kW/m 2 The second time is 10-600s;
(6) Cooling the solar cell blank to obtain a PERC solar cell finished product;
the lowest temperature of the first temperature range > the lowest temperature of the second temperature range.
2. The method of claim 1, wherein in step (2), the drying temperature is 50-600 ℃ and the drying time is 10-120s;
in the step (3), the sintering temperature is 400-1000 ℃, and the sintering time is 5-100s.
3. The method of claim 2, wherein in step (2), the drying temperature is 200-400 ℃ and the drying time is 10-60s;
in the step (3), the sintering temperature is 500-900 ℃, and the sintering time is 5-30s;
in the step (4), the first temperature range is 300-900 ℃, and the first time is 50-120s;
in the step (5), the second temperature range is 100-400 ℃, and the second time is 30-300s;
in the step (6), the cooling time is 10-60s.
4. The method of claim 1, wherein in steps (3) and (4), the upper and lower surface temperatures of the green solar cell sheet are different;
in the steps (2), (5) and (6), the temperatures of the upper surface and the lower surface of the solar cell blank are the same.
5. The method of claim 1, wherein in step (4), the temperature of the sintered green solar cell is gradually decreased from 800-1000 ℃ to 200-300 ℃ for 50-120s.
6. The method of claim 1, wherein step (4) comprises:
(4.1) annealing the sintered solar cell blank to 200-300 ℃ from 800-1000 ℃;
(4.2) heating the solar cell blank to 500-700 ℃;
(4.3) cooling the solar cell blank to 200-300 ℃;
the total processing time of the step (4) is 50-120s.
7. The method of claim 1, wherein in step (5), the temperature of the solar cell is gradually decreased from 300-500 ℃ to 50-250 ℃ for 30-300s.
8. The method of claim 1, wherein step (5) comprises:
(5.1) cooling the solar cell blank to 100-250 ℃ from 300-500 ℃ in a gradient way;
(5.2) keeping the temperature of the solar cell blank constant at 100-250 ℃;
the total processing time of the step (5) is 30-300s.
9. The method of claim 1, wherein step (5) comprises:
(5.1) cooling the solar cell blank to 150-250 ℃ from 300-500 ℃ in a gradient way;
(5.2) heating the solar cell blank from 150-250 ℃ to 170-300 ℃;
(5.3) keeping the temperature of the solar cell blank constant at 170-300 ℃;
the total processing time of the step (5) is 30-300s.
10. A high efficiency PERC solar cell, characterized in that it is manufactured using the manufacturing method according to any one of claims 1 to 9.
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